Beutler, J., Foulk, J.W., Clement, J.J., Stevens, J., Hodges, V.C., Silverman, S., Chivas, R., & Chivas, R. (2015). Visible Light LVP on Bulk Silicon Substrates [Conference Poster]. https://www.osti.gov/biblio/1327798
Publications
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Jump to search filtersBeutler, J., Clement, J.J., Foulk, J.W., Stevens, J., Hodges, V.C., Silverman, S., Chivas, R., & Chivas, R. (2015). Visible light LVP on bulk silicon devices [Conference Poster]. Conference Proceedings from the International Symposium for Testing and Failure Analysis. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84962428753&origin=inward
Beutler, J., Foulk, J.W., Miller, M.A., Stevens, J., Clement, J.J., & Clement, J.J. (2014). Visible Light LVP on Ultra-Thinned Substrates [Presentation]. https://www.osti.gov/biblio/1241657
Beutler, J., Foulk, J.W., Miller, M.A., Clement, J.J., Stevens, J., & Stevens, J. (2014). Visible Light LVP on Ultra-Thinned Substrates [Conference Poster]. https://www.osti.gov/biblio/1319764
Nguyen, K., Lu, T.M., Muller, R.P., Carroll, M.S., Lilly, M., Nielsen, E., Bishop, N.C., Young, R.W., Wendt, J.R., Dominguez, J., Pluym, T., Stevens, J., & Stevens, J. (2013). Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot. Nano Letters, 13(12), pp. 5785-5790. https://doi.org/10.1021/nl4020759
Lilly, M., Wendt, J.R., Pluym, T., Stevens, J., Ten Eyck, G.A., Dominguez, J., Young, R.W., Nielsen, E., Muller, R.P., Carroll, M.S., Lu, T.M., Tracy, L.A., Nguyen, K., Luhman, D.R., Bishop, N.C., Singh, M., Bielejec, E.S., Garratt, E.J., & Garratt, E.J. (2013). Manipulating single electrons in semiconductor devices for quantum computing [Conference]. https://www.osti.gov/biblio/1113349
Nguyen, K., Carroll, M.S., Lilly, M., Bishop, N.C., Nielsen, E., Wendt, J.R., Dominguez, J., Pluym, T., Stevens, J., Ten Eyck, G.A., & Ten Eyck, G.A. (2013). Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot [Conference]. https://www.osti.gov/biblio/1145299
Stevens, J., Shul, R.J., & Shul, R.J. (2012). Inductively Coupled Plasma Etching of InP with Cl2/H2/Ar Plasma [Conference]. https://www.osti.gov/biblio/1116450
Nguyen, K., Young, R.W., Nielsen, E., Rahman, R., Muller, R.P., Carroll, M.S., Lilly, M., Bishop, N.C., Tracy, L.A., Wendt, J.R., Grubbs, R.K., Pluym, T., Stevens, J., Dominguez, J., & Dominguez, J. (2012). Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias [Conference]. https://www.osti.gov/biblio/1061180
Nguyen, K., Stevens, J., Grubbs, R.K., Pluym, T., Dominguez, J., Muller, R.P., Carroll, M.S., Jacobson, N.T., Witzel, W.M., Bishop, N.C., Tracy, L.A., Carr, S.M., Lu, T.M., Wendt, J.R., & Wendt, J.R. (2012). Pulsed electron transition measurements in a silicon double quantum dot [Conference]. https://www.osti.gov/biblio/1294362
Stevens, J., Shul, R.J., & Shul, R.J. (2012). Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry [Conference]. https://www.osti.gov/biblio/1294181
Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Stevens, J., Vizkelethy, G., Swanson, S.E., & Swanson, S.E. (2012). SOI substrate removal for SEE characterization: Techniques and applications [Conference]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84865375220&origin=inward
Sinclair, M.B., Peters, D., Brener, I., Clem, P., Ihlefeld, J.F., Basilio, L.I., Warne, L.K., Wendt, J.R., Stevens, J., Miller, S.M., & Miller, S.M. (2012). Dielectric Resonators for Backward Wave Infrared Metamaterials [Conference]. https://www.osti.gov/biblio/1067545
Brener, I., Clem, P., Ihlefeld, J.F., Basilio, L.I., Warne, L.K., Wendt, J.R., Stevens, J., Miller, S.M., Peters, D., & Peters, D. (2012). Dielectric Resonators for Backward Wave Infrared Metamaterials [Conference]. https://www.osti.gov/biblio/1117736
Boye, R., Peters, D., Wendt, J.R., Samora, S., Stevens, J., Shul, R.J., Kellogg, R.A., Kemme, S.A., & Kemme, S.A. (2012). High Precision Fabrication of Polarization Insensitive Resonant Grating Filters [Conference]. https://www.osti.gov/biblio/1062815
Lilly, M., Nielsen, E., Muller, R.P., Carroll, M.S., Nguyen, K., Bishop, N.C., Wendt, J.R., Grubbs, R.K., Pluym, T., Stevens, J., Dominguez, J., Young, R.W., & Young, R.W. (2012). Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias [Conference]. https://www.osti.gov/biblio/1062789
Peters, D., Wendt, J.R., Samora, S., Stevens, J., Shul, R.J., Kellogg, R.A., Kemme, S.A., & Kemme, S.A. (2011). High precision fabrication of polarization insensitive resonant grating filters [Conference]. https://www.osti.gov/biblio/1118294
Brener, I., Sinclair, M.B., Clem, P., Ihlefeld, J.F., Stevens, J., Wendt, J.R., Peters, D., Warne, L.K., Basilio, L.I., & Basilio, L.I. (2011). All-Dielectric Infrared Metamaterials [Conference]. https://www.osti.gov/biblio/1106006
Sinclair, M.B., Brener, I., Peters, D., Stevens, J., Wendt, J.R., Basilio, L.I., Warne, L.K., Clem, P., Ihlefeld, J.F., & Ihlefeld, J.F. (2011). All-Dielectric Infrared Metamaterials [Conference]. https://www.osti.gov/biblio/1118732
Grubbs, R.K., Pluym, T., Dominguez, J., Young, R.W., Muller, R.P., Nielsen, E., Bishop, N.C., Carroll, M.S., Lilly, M., Tracy, L.A., Nguyen, K., Carr, S.M., Lu, T.M., Wendt, J.R., Stevens, J., & Stevens, J. (2011). Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots [Conference]. https://www.osti.gov/biblio/1143428
Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Stevens, J., Swanson, S.E., & Swanson, S.E. (2011). SOI Substrate Removal for SEE Characterization and Recent Results [Presentation]. https://www.osti.gov/biblio/1106398
Carroll, M.S., Pluym, T., Carr, S.M., Tracy, L.A., Bishop, N.C., Lu, T.M., Wendt, J.R., Lilly, M., Stevens, J., Grubbs, R.K., Ten Eyck, G.A., & Ten Eyck, G.A. (2011). Transport and Charge Sensing for MOS and SiGe Quantum Dot Devices [Conference]. https://www.osti.gov/biblio/1120185
Lilly, M., Young, R.W., Muller, R.P., Nielsen, E., Carroll, M.S., Bishop, N.C., Tracy, L.A., Wendt, J.R., Stevens, J., Grubbs, R.K., Pluym, T., Dominguez, J., & Dominguez, J. (2011). Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots [Conference]. https://www.osti.gov/biblio/1106432
Ten Eyck, G.A., Bishop, N.C., Childs, K.D., Wendt, J.R., Stevens, J., Grubbs, R.K., Lilly, M., Carroll, M.S., & Carroll, M.S. (2011). RF SET and charge sensing in a Si MOS Device with Lateral Geometry [Conference]. https://www.osti.gov/biblio/1107661
Ginn, J., Clem, P., Sinclair, M.B., Peters, D., Wendt, J.R., Stevens, J., Hines, P., Brener, I., Basilio, L.I., Warne, L.K., Ihlefeld, J.F., & Ihlefeld, J.F. (2011). Infrared Dielectric Resonator Metamaterial [Conference]. https://www.osti.gov/biblio/1110554
Ginn, J., Clem, P., Sinclair, M.B., Peters, D., Wendt, J.R., Stevens, J., Hines, P., Brener, I., Basilio, L.I., Warne, L.K., Ihlefeld, J.F., & Ihlefeld, J.F. (2010). Experimental Demonstration of an Infrared Cubic Dielectric Resonator Metamaterial. Science. https://www.osti.gov/biblio/1114642
Young, R.W., Stevens, J., Lilly, M., Carroll, M.S., Ten Eyck, G.A., Childs, K.D., Wendt, J.R., Grubbs, R.K., & Grubbs, R.K. (2010). Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide-semiconductor device with lateral geometry. Applied Physics Letters, 97(19). https://doi.org/10.1063/1.3518058
Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Flores, R.S., Stevens, J., Swanson, S.E., & Swanson, S.E. (2010). Direct Comparison of Charge Collection from Single-Photon and Two-Photon Laser Testing Techniques. IEEE Transactions on Nuclear Science. https://www.osti.gov/biblio/1141813
Brennecka, G., Stevens, J., Gin, A., Scrymgeour, D., & Scrymgeour, D. (2010). Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories. 10.2172/1010853
Bishop, N.C., Stevens, J., Childs, K.D., Ohlhausen, J.A., Lilly, M., Carroll, M.S., Young, R.W., Bielejec, E.S., Ten Eyck, G.A., Wendt, J.R., Rahman, R., Grubbs, R.K., & Grubbs, R.K. (2010). Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact [Conference]. https://www.osti.gov/biblio/1022986
Brennecka, G., Gin, A., Stevens, J., & Stevens, J. (2010). Bi-level micro- and nano-patterning of functional electronic oxides [Conference]. https://www.osti.gov/biblio/1020422
Lilly, M., Silva, B.L., Carroll, M.S., Stevens, J., Reno, J.L., Tracy, L.A., Eng, K., Childs, K.D., Ten Eyck, G.A., Wendt, J.R., Grubbs, R.K., Tibbetts, D.R., & Tibbetts, D.R. (2010). Nanoelectronics for single spin studies in semiconductor materials [Presentation]. https://www.osti.gov/biblio/1681141
Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Flores, R.S., Stevens, J., Swanson, S.E., & Swanson, S.E. (2010). Direct comparison of charge collection from single-photon and two-photon laser testing techniques [Conference]. https://www.osti.gov/biblio/991010
Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Flores, R.S., Stevens, J., Swanson, S.E., & Swanson, S.E. (2010). Direct comparison of charge collection from single-photon and two-photon laser testing techniques [Conference]. https://www.osti.gov/biblio/991855
Grubbs, R.K., Lilly, M., Tracy, L.A., Ten Eyck, G.A., Eng, K., Young, R.W., Childs, K.D., Stevens, J., & Stevens, J. (2010). Coulomb Blockade in Double Top Gated Silicon Nanostructures with Integrated Charge Sensing [Conference]. https://www.osti.gov/biblio/1124259
Bishop, N.C., Tracy, L.A., Wendt, J.R., Carroll, M.S., Childs, K.D., Eng, K., Grubbs, R.K., Lilly, M., Silva, B.L., Stevens, J., Tibbetts, D.R., & Tibbetts, D.R. (2009). Material and Electrical Characterization for Qubit Devices [Conference]. https://www.osti.gov/biblio/1141717
Ten Eyck, G.A., Childs, K.D., Tibbetts, D.R., Wendt, J.R., Stevens, J., Grubbs, R.K., Tracy, L.A., Eng, K., Lilly, M., Carroll, M.S., & Carroll, M.S. (2009). Back End Processing and CV Characterization for Qubit Devices [Conference]. https://www.osti.gov/biblio/1278740
Tracy, L.A., Ten Eyck, G.A., Eng, K., Stalford, H.L., Childs, K.D., Stevens, J., Grubbs, R.K., Lilly, M., Carroll, M.S., & Carroll, M.S. (2009). Low Disorder Si MOSFET Dots for Quantum Computation [Conference]. https://www.osti.gov/biblio/1142386
Crawford, M.H., Allerman, A., Cross, K.C., Shul, R.J., Stevens, J., Bogart, K.H.A., & Bogart, K.H.A. (2008). Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes. Proposed for publication in Applied Physics Letters.. https://www.osti.gov/biblio/951526
Carroll, M.S., Tracy, L.A., Eng, K., Ten Eyck, G.A., Stevens, J., Wendt, J.R., Lilly, M., & Lilly, M. (2008). Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits [Conference]. https://www.osti.gov/biblio/966239
Childs, K.D., Ten Eyck, G.A., Tracy, L.A., Stevens, J., Wendt, J.R., Lilly, M., Carroll, M.S., Gurrieri, T., & Gurrieri, T. (2008). Steps toward fabricating Cryogenic CMOS Compatible Single Electron Devices [Presentation]. 10.1109/NANO.2008.149
Ten Eyck, G.A., Tracy, L.A., Wendt, J.R., Childs, K.D., Stevens, J., Lilly, M., Carroll, M.S., Eng, K., & Eng, K. (2008). Steps toward fabricating cryogenic CMOS compatible single electron devices for future qubits [Conference]. https://www.osti.gov/biblio/947852
Ten Eyck, G.A., Tracy, L.A., Childs, K.D., Stevens, J., Wendt, J.R., Lilly, M., Carroll, M.S., & Carroll, M.S. (2008). Steps toward fabricating cryogenic CMOS compatible single electron devices for future qubits [Conference]. https://www.osti.gov/biblio/947854
Miller, M.A., Crawford, M.H., Allerman, A., Cross, K.C., Shul, R.J., Stevens, J., Bogart, K.H.A., & Bogart, K.H.A. (2008). Smooth and Vertical Facet Formation for AlGaN-based Deep-UV Laser Diodes [Presentation]. 10.1007/s11664-009-0670-1
Carroll, M.S., Eng, K., Ten Eyck, G.A., Tracy, L.A., Childs, K.D., Wendt, J.R., Stevens, J., Lilly, M., & Lilly, M. (2008). Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits [Conference]. https://www.osti.gov/biblio/1143071
Carroll, M.S., Lilly, M., Childs, K.D., Tracy, L.A., Eng, K., Grubbs, R.K., Wendt, J.R., Stevens, J., & Stevens, J. (2008). Coulomb Blockade in Double Top Gated Si MOS Nano-Structures [Conference]. https://www.osti.gov/biblio/1145962
Overberg, M.E., Baca, A.G., Stevens, J., Martinez, M., Armendariz, M., Wouters, G.A., & Wouters, G.A. (2006). SiC Via Formation for Wide Bandgap HEMT/MMIC Devices [Conference]. https://www.osti.gov/biblio/1266060