Publications

Presented within this report are the results of a brief examination of optical tagging technologies funded by the Laboratory Directed Research and Development (LDRD) program at Sandia National Laboratories. The work was performed during the summer months of 2002 with total funding of $65k. The intent of the project was to briefly examine a broad range of approaches to optical tagging concentrating on the wavelength range between ultraviolet (UV) and the short wavelength infrared (SWIR, {lambda} < 2{micro}m). Tagging approaches considered include such things as simple combinations of reflective and absorptive materials closely spaced in wavelength to give a high contrast over a short range of wavelengths, rare-earth oxides in transparent binders to produce a narrow absorption line hyperspectral tag, and fluorescing materials such as phosphors, dies and chemically precipitated particles. One technical approach examined in slightly greater detail was the use of fluorescing nano particles of metals and semiconductor materials. The idea was to embed such nano particles in an oily film or transparent paint binder. When pumped with a SWIR laser such as that produced by laser diodes at {lambda}=1.54{micro}m, the particles would fluoresce at slightly longer wavelengths, thereby giving a unique signal. While it is believed that optical tags are important for military, intelligence and even law enforcement applications, as a business area, tags do not appear to represent a high on return investment. Other government agencies frequently shop for existing or mature tag technologies but rarely are interested enough to pay for development of an untried technical approach. It was hoped that through a relatively small investment of laboratory R&D funds, enough technologies could be identified that a potential customers requirements could be met with a minimum of additional development work. Only time will tell if this proves to be correct.

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N₂. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

The work functions of polycrystalline metals are often used to systematize Schottky barrier height data for rectifying contacts to semiconductors. Rectifying contacts to silicon devices are predominantly formed using conductive metal silicides with work functions which are not as well characterized as metal work functions. The present work has two objectives. First, it classifies the transition metals using correlations between the metal work function and the atomic chemical potential. Second, the available data for metal silicides is collected and interpreted using an average charge transfer (ACT) model. The ACT model accounts for the electronic hardness of the component elements in addition to their chemical potentials. New trends in the behavior of silicide work functions are identified.

We discuss the role of localized high electric fields in the modification of Au surfaces with a W probe using the Interfacial Force Microscope. Upon bringing a probe close to a Au surface, we measure both the interfacial force and the field emission current as a function of separation with a constant potential of 100 V between tip and sample. The current initially increases exponentially as the separation decreases. However, at a distance of less than {approximately} 500{angstrom} the current rises sharply as the surface begins to distort and rapidly close the gap. Retraction of the tip before contact is made reveals the formation of a mound on the surface. We propose a simple model, in which the localized high electric field under the tip assists the production of mobile Au adatoms by detachment from surface steps, and a radial field gradient causes a net flux of atoms toward the tip by surface diffusion. These processes give rise to an unstable surface deformation which, if left unchecked, results in a destructive mechanical contact. We discuss our findings with respect to earlier work using voltage pulses in the STM as a means of nanofabrication.

An attempt is made to identify preferred values for the work functions of the rare earth elements by correlating the atomic chemical potential with the work function of the bulk elements. Trends in the alkali and alkali earth metal are evaluated in the same context. Strong linear correlation between the two quantities is observed within the IA, 11A, and IIIB (Se, Y, La) groups. Within the lanthanide series the nature of the correlation between the metallic radius and the work function suggests a dependence on the total angular momentum.

AlGaAs/GaAs solar cells are typically characterized as having relatively high interface recombination velocities at the heteroface. Some of the factors influencing the design of solar cell window layers are examined, and the effect of substituting InAlAs/GaAs superlattice alloys and InAlAs bulk alloys in place of AlGaAs is considered. Potential advantages are reduced surface recombination at the heterojunction, reduced thermionic emission into the window layer, thinner window layers, and reduced absorption in the window layer. Theoretical models predict a lower effective surface recombination velocity and a smaller acceptor activation energy for superlattice alloys. Experimental absorption data show that superlattice alloys have a lower absorption coefficient at short wavelengths near the UV roll off.