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Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors

Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

Long-wavelength vertical cavity surface emitting lasers (VCSELs) are attractive for a variety of application but one of the major obstacles in implementing these structures is the lack of sufficiently large refractive index contrast (Δn) in the mirror layer pairs that can be lattice matched to InP. In order to realize a monolithic device, a AlGaAsSb/AlAsSb material system (Δn to approximately 0.52) lattice matched to InP is utilized as a means of forming highly reflecting distributed Bragg reflectors (DBRs) with relatively few mirror pairs. The structure is grown by molecular beam epitaxy. The active region consists of 2 λ thick bulk InGaAs, whereas top and bottom DBR are made up of 15 and 20 periods of AlGaAsSb/AlAsSb mirror pairs respectively.