Publications Details

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Pan, W.; Kang, W.; Lilly, M.P.; Reno, J.L.; Baldwin, K.W.; West, K.W.; Pfeiffer, L.N.; Tsui, D.C.

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν=1/3,2/5,3/7... and its particle-hole conjugate states at filling factors 1-ν=2/3,3/5,4/7... have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.