Publications Details

Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

Ashby, Carol I.H.; Baca, Albert G.; Chang, P.C.; Hafich, M.J.; Hammons, B.E.; Zavadil, Kevin R.

A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.