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High-Voltage Regrown Nonpolar notation='LaTeX'{m}-Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches

Monavarian, M.; Pickrell, G.; Aragon, A.A.; Stricklin, I.; Crawford, M.H.; Allerman, A.A.; Celio, K.C.; Leonard, F.; Talin, A.A.; Armstrong, A.M.; Feezell, D.

We report high-voltage regrown nonpolar {m}-plane p-n diodes on freestanding GaN substrates. A high blocking voltage of 540 V at 1 mA/cm ^{\textsf {2}} (corresponding to an electric field of E 3.35 MV/cm), turn-ON voltages between 2.9 and 3.1 V, specific on-resistance of 1.7 \text{m}\Omega \cdot \textsf {cm}^{\textsf {2}} at 300 A/cm ^{\textsf {2}} and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O, and C interfacial impurity levels up to \textsf {2}\times \textsf {10}^{\textsf {17}} cm ^{-\textsf {3}} \textsf {8}\times \textsf {10}^{\textsf {17}} cm ^{-\textsf {3}} and\textsf {1}\times \textsf {10}^{\textsf {19}} cm ^{-\textsf {3}} respectively, at the metallurgical junction of {m}-plane, p-n diodes do not result in very early breakdown in the reverse bias although the off-state leakage current in the forward bias is affected. The impact of the growth interruption/regrowth on diode performance is also investigated.