Publications Details

GaN high electron mobility transistor degradation: Effect of RF stress

Douglas, E.A.; Gila, B.P.; Abernathy, C.R.; Ren, F.; Pearton, S.J.

Sub-micron AlGaN/GaN high electron mobility transistors were RF stressed at various drain bias conditions at 10 GHz under 3 dB and 3.7 dB compression. Rapid degradation was observed above a drain bias of 20 V, with significant degradation of the Schottky contact. Additionally, electroluminescence and cathodoluminescence was performed on stressed devices. Localization of 2.2 eV defect emission was observed on a device suffering from infant mortality. © The Electrochemical Society.