Publications Details

Capacitance of a Ge/SiGe heterostructure field-effect transistor

Suslov, Alexey V.; Lu, Tzu-Ming

In this project we studied undoped Ge/SiGe heterostructure field-effect transistors, which had a very wide hole density range from 1x10¹⁰cm^-2 to 3.5x10¹¹ cm^-2 tunable by (negative) gate voltage. At low temperatures reasonably high carriers mobility of about 3.4x10⁵ cm²/Vs was achieved.