Publications Details

Accelerated life-time testing and resistance degradation of thin-film decoupling capacitors

Al-Shareef, H.

Resistance degradation in PZT thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. It is found that the mean-time-to-failure (life-time or t{sub f}) of the capacitors shows a power law dependence on applied voltage of he form t{sub f} {proportional_to} V{sup {minus}n} (n {approximately} 4--5). The capacitor life-time also exhibits a temperature dependence of the form t{sub f} {proportional_to} exp(E{sub a}/kT), with an activation energy of {approximately} 0.8 eV. The steady-state leakage current in these samples appears to be bulk controlled. The voltage, temperature, and polarity dependence of the leakage current collectively suggest a leakage current mechanism most similar to a Frenkel-Poole process. The life-time and leakage current of the Nb-doped PZT films are superior to the undoped PZT films. This result can be explained based on the point-defect chemistry of the PZT system. Finally, the results indicate that the Nb-doped PZT films meet the essential requirements for decoupling capacitor applications.