Failure Analysis, Test, and Reliability Support

Unique expertise to industry standards

Sandia’s expertise in novel failure analysis has developed many techniques that are now industry standards. Our mission continues to develop expertise in Si CMOS, III-V, MEMS, and optoelectronics reliability, and both failure and functional analysis throughout the entire product lifecycle.

Techniques and Tools

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  • Light Emission-based Techniques for localizing fabrication defects
  • Laser Based Techniques: Thermally Induced Voltage Alterations (TIVA), Light Induced Voltage Alterations (LIVA)
  • E-Beam Based Techniques: Passive Voltage Contrast (PVC), Charge-Induced Voltage Alteration (CIVA)
  • Atomic Force Microscopy
  • Laser Scanning Microscopy
  • Scanning Electron Microscope (SEM) including nano-probing and environmental mode
  • Focused Ion Beam (FIB) – Dual Beam and Backside circuit edit
  • Transmission Electron Microscope (TEM), including aberration corrected STEM with enhanced atomic-scale compositional analysis capability and one of the Nation’s only In-situ Ion Irradition TEMs (I3TEM, in our Ion-Beam Laboratory facility)
  • Low-Energy Electron Microscopy and Photo-Emission Electron Microscopy
  • Superconducting Quantum Interference Device (SQUID)
  • Extensive package and chip deprocessing and analysis capabilities