Denis Mamaluy

Cognitive & Emerging Computing

Author profile picture

Cognitive & Emerging Computing

dnmamal@sandia.gov

My older (pre-2013) publications and CV

(505) 844-2054

Sandia National Laboratories, New Mexico
 P.O. Box 5800
 Albuquerque, NM 87185-1322

Biography

The CMOS technology is famously approaching its scaling limit: within the next decade or so, nano-scale FET transistors will reach the sub 5-nm physical gate lengths, at which point any further reduction of their sizes will likely become impractical and even impossible due to the thermal fluctuation noise. There are beyond-CMOS and non-charge based alternatives, some of which may be scaled below the 5-nm gate length and possibly down to atomic sizes. In any case, at that point the foreseeable human scientific and technological capabilities will reach the ultimate scaling limit for the elementary logic and memory device size.


In my research I am trying to answer the following questions:

  • What are the corresponding limits of computation?
  • How much computing can we actually perform and how much information we can actually store with 1 kg of non-exotic matter (i.e. far, far below Bekenstein bound)?
  • Which device-architecture paradigms can allow us to continue increasing FLOPS/kg ratio after the CMOS scaling limit is reached?
  • Can this increase still follow the exponential (“new Moore’s law”) trend?

If you like to discuss these and other (e.g. digital physics) fascinating subjects or have an idea about a potential CMOS replacement ­and would like to test it via computer simulation – please give me a call or send me an email.

Education

  • B. Verkin Institute for Low Temperature Physics & Engineering,
  • Ph.D. in Physics and Mathematics, Kharkov, Ukraine, November 2000.
  • Kharkov State University, Physics Department, division of theoretical physics,
  • M.S. in Physics (with honors), Kharkov, Ukraine, June 1997.
  • UNESCO at Kharkov University,
  • M.A. in Philosophy of Communications and Management, Kharkov, Ukraine, May 1997.

Appointments

  • 2012-pres.: Senior R&D scientist and engineer, Sandia National Laboratories
  • 2006-2011: Research professor, ECEE, ASU
  • 2005-2006: Faculty research associate, ECEE, ASU
  • 2002-2005: Research associate, Department of Electrical Engineering, ASU
  • 2000-2002: Post-doctorate fellow, Walter Schottky Institute, Technische Universität München, Munich, Germany

Publications

  • Mendez Granado, J.P., Mamaluy, D., & Mamaluy, D. (2023). Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $\delta$-layer tunnel junctions. Scientific Reports, 13(1). https://doi.org/10.1038/s41598-023-49777-9 Publication ID: 122532
  • Mendez Granado, J.P., Mamaluy, D., & Mamaluy, D. (2023). TWO CONDUCTIVITY REGIMES IN SEMICONDUCTOR δ-LAYER TUNNEL JUNCTIONS [Conference Poster]. https://doi.org/10.2172/2431027 Publication ID: 127552
  • Mamaluy, D., Mendez Granado, J.P., & Mendez Granado, J.P. (2023). δ-layer tunnel junctions in semiconductors for charge sensing [Conference Presenation]. https://doi.org/10.2172/2431009 Publication ID: 127484
  • Mamaluy, D. (2022). Prediction of two conductivity regimes in δ-layer tunnel junctions [Conference Presenation]. https://doi.org/10.2172/2006247 Publication ID: 121700
  • Mamaluy, D., Mendez Granado, J.P., & Mendez Granado, J.P. (2022). Revealing conductivity of p-type delta layer systems for novel computing applications. https://doi.org/10.2172/1887942 Publication ID: 80214
  • Mamaluy, D., Mendez Granado, J.P., & Mendez Granado, J.P. (2022). Strong Quantization of Current-carrying Electron States in δ-layer Systems [Conference Paper]. https://www.osti.gov/biblio/2003900 Publication ID: 114880
  • Owen, J., Fuchs, E., Santini, R., Randall, J., Mendez Granado, J.P., Gao, X., Mamaluy, D., Misra, S., & Misra, S. (2022). Atomic Precision Advanced Manufacturing for Ultraprecise 2D Bipolar Devices [Conference Presenation]. https://doi.org/10.2172/2003702 Publication ID: 114104
  • Mendez Granado, J.P., Mamaluy, D., Gao, X., Misra, S., & Misra, S. (2021). Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions [Conference Paper]. 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). https://doi.org/10.1109/sispad54002.2021.9592565 Publication ID: 79465
  • Mendez Granado, J.P., Gao, X., Mamaluy, D., Misra, S., & Misra, S. (2021). Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions [Conference Presenation]. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. https://doi.org/10.1109/sispad54002.2021.9592565 Publication ID: 75873
  • Mamaluy, D., Mendez Granado, J.P., Gao, X., Misra, S., & Misra, S. (2021). Revealing quantum effects in highly conductive δ-layer systems. Communications Physics, 4(1). https://doi.org/10.1038/s42005-021-00705-1 Publication ID: 79264
  • Allemang, C.R., Anderson, E.M., Baczewski, A.D., Bussmann, E., Butera, R., de Campbell, A., Campbell, Q.T., Carr, S.M., Frederick, E., Gamache, P., Gao, X., Grine, A., Gunter, M., Halsey, C., Ivie, J.A., Katzenmeyer, A.M., Leenheer, A.J., Lepkowski, W., Lu, T., … Young, S.M. (2021). FAIR DEAL Grand Challenge Overview. https://doi.org/10.2172/1854733 Publication ID: 75955
  • Mendez Granado, J.P., Mamaluy, D., & Mamaluy, D. (2021). Quantum Effects of Unintentional Dopants in delta-layer Tunnel Junctions [Conference Presenation]. https://doi.org/10.2172/1867275 Publication ID: 79464
  • Mendez Granado, J.P., Mamaluy, D., Gao, X., Misra, S., & Misra, S. (2021). Conductive Properties of Tunnel Junctions in Semiconductor delta-layer Systems [Conference Presenation]. https://doi.org/10.2172/1867274 Publication ID: 78488
  • Mendez Granado, J.P., Mamaluy, D., Gao, X., Misra, S., & Misra, S. (2021). Quantum Transport Framework for Highly Conductive delta-layer Systems [Conference Presenation]. https://doi.org/10.2172/1866559 Publication ID: 78327
  • Gao, X., Tracy, L.A., Anderson, E.M., de Campbell, A., Ivie, J.A., Lu, T., Mamaluy, D., Schmucker, S.W., Misra, S., & Misra, S. (2020). Modeling assisted room temperature operation of atomic precision advanced manufacturing devices [Conference Poster]. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85096243933&origin=inward Publication ID: 74763
  • Mendez Granado, J.P., Mamaluy, D., Gao, X., Anderson, E.M., de Campbell, A., Ivie, J.A., Lu, T., Schmucker, S.W., Misra, S., & Misra, S. (2020). Quantum transport in Si:P δ-layer wires [Conference Poster]. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. https://doi.org/10.23919/sispad49475.2020.9241610 Publication ID: 74626
  • Mendez Granado, J.P., Mamaluy, D., Gao, X., Anderson, E.M., de Campbell, A., Ivie, J.A., Lu, T., Schmucker, S.W., Misra, S., & Misra, S. (2020). Quantum transport in Si:P δ-layer wires [Conference Poster]. https://www.osti.gov/biblio/1820274 Publication ID: 74794
  • Gao, X., Tracy, L.A., Anderson, E.M., de Campbell, A., Ivie, J.A., Lu, T., Mamaluy, D., Schmucker, S.W., Misra, S., & Misra, S. (2020). Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices [Conference Poster]. https://doi.org/10.23919/SISPAD49475.2020.9241642 Publication ID: 74647
  • Gao, X., Mamaluy, D., Lepkowski, W., Young, S.M., & Young, S.M. (2020). FAIR DEAL GC Thrust 2: APAM Modeling [Presentation]. https://www.osti.gov/biblio/1808429 Publication ID: 74069
  • Mamaluy, D., Granado, J., Gao, X., & Gao, X. (2019). Quantum transport in APAM wires [Conference Poster]. https://www.osti.gov/biblio/1643480 Publication ID: 66700
  • Gao, X., Mamaluy, D., Anderson, E.M., de Campbell, A., Grine, A., Katzenmeyer, A.M., Lu, T., Schmucker, S.W., Tracy, L.A., Ward, D.R., Misra, S., & Misra, S. (2019). Modeling Assisted Atomic Precision Advanced Manufacturing (APAM) Towards Room Temperature Operation [Conference Poster]. https://www.osti.gov/biblio/1643549 Publication ID: 66586
  • Mamaluy, D., Mendez Granado, J.P., Gao, X., & Gao, X. (2019). Quantum Transport in APAM Wires: Consequences of the novel electronic structure of Si:P δ-layered systems [Presentation]. https://www.osti.gov/biblio/1700543 Publication ID: 66034
  • Gao, X., Mamaluy, D., Tracy, L.A., Ward, D.R., Bussmann, E., & Bussmann, E. (2019). Modeling assisted APAM towards room temperature operation [Presentation]. https://www.osti.gov/biblio/1700540 Publication ID: 66031
  • Gao, X., Mamaluy, D., Goldflam, M., & Goldflam, M. (2019). FAIR DEAL GC Thrust 2: APAM modeling [Presentation]. https://www.osti.gov/biblio/1646191 Publication ID: 66073
  • Mamaluy, D., Gao, X., Maurer, L.N., & Maurer, L.N. (2019). FAIR DEAL GC Thrust #2: APAM Modeling [Presentation]. https://www.osti.gov/biblio/1592213 Publication ID: 64267
  • McCormick, F.B., Marinella, M., Mitchell, A., Hein, O., James, C.D., Mamaluy, D., Taylor, T., Gokhale, M., Shalf, J., Culhane, C., & Culhane, C. (2018). Solving the Information Technology Challenge Beyond Moore’s Law (DOE Big Idea National Lab Meeting Report). https://doi.org/10.2172/1527319 Publication ID: 103992
  • Musson, L.C., Hennigan, G., Gao, X., Mamaluy, D., & Mamaluy, D. (2016). RAMSES / Charon Progress and Code Collaboration Overview [Conference Poster]. https://www.osti.gov/biblio/1410250 Publication ID: 47904
  • Mamaluy, D., Gao, X., Tierney, B.D., & Tierney, B.D. (2016). Fully-Coupled Thermo-Electrical Modeling and Simulation of Transition Metal Oxide Memristors. https://doi.org/10.2172/1331433 Publication ID: 47603
  • Hughart, D.R., Gao, X., Mamaluy, D., Marinella, M., Mickel, P.R., & Mickel, P.R. (2016). Power signatures of electric field and thermal switching regimes in memristive SET transitions. Journal of Physics D: Applied Physics, 49(24). https://doi.org/10.1088/0022-3727/49/24/245103 Publication ID: 80707
  • Mamaluy, D., Gao, X., Marinella, M., & Marinella, M. (2016). Comprehensive Assessment of Oxide Memristors as Post-CMOS Memory and Logic Devices [Conference Poster]. https://www.osti.gov/biblio/1368819 Publication ID: 50206
  • Gao, X., Mamaluy, D., Cyr, E.C., Marinella, M., & Marinella, M. (2016). Comprehensive assessment of oxide memristors as post-CMOS memory and logic devices. ECS Transactions, 72(3), pp. 49-58. https://doi.org/10.1149/07203.0049ecst Publication ID: 48851
  • Tierney, B.D., Hjalmarson, H.P., McLain, M., Hughart, D.R., Marinella, M., Mamaluy, D., & Mamaluy, D. (2015). Transport Physics in Thin-Film Oxides: From Capacitors to Memristors [Conference Poster]. https://www.osti.gov/biblio/1331866 Publication ID: 46503
  • Gao, X., Mamaluy, D., Mickel, P.R., Marinella, M., & Marinella, M. (2015). Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors [Conference Poster]. https://doi.org/10.1149/06905.0183ecst Publication ID: 46053
  • Gao, X., Mamaluy, D., Mickel, P.R., Marinella, M., & Marinella, M. (2015). Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors. ECS Transactions (Online), 69(5), pp. 183-193. https://doi.org/10.1149/06905.0183ecst Publication ID: 44343
  • Arrowsmith, M., Guildenbecher, D., Mamaluy, D., & Mamaluy, D. (2015). LDRD @ SNL May 2015. https://doi.org/10.2172/1184074 Publication ID: 43800
  • Mamaluy, D., Gao, X., & Gao, X. (2015). The fundamental downscaling limit of field effect transistors. Applied Physics Letters, 106(19). https://doi.org/10.1063/1.4919871 Publication ID: 42744
  • Tierney, B.D., Hjalmarson, H.P., McLain, M., Mamaluy, D., & Mamaluy, D. (2015). The Role of Joule Heating and Defect Chemistry in Memristor Modeling [Conference Poster]. https://www.osti.gov/biblio/1241114 Publication ID: 42353
  • Gao, X., Mamaluy, D., Mickel, P.R., Marinella, M., & Marinella, M. (2015). Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Oxide Memristors [Conference Poster]. https://www.osti.gov/biblio/1240110 Publication ID: 42239
  • Mamaluy, D., Gao, X., Tierney, B.D., & Tierney, B.D. (2014). The ultimate downscaling limit of FETs. https://doi.org/10.2172/1160288 Publication ID: 38989
  • Gao, X., Mamaluy, D., & Mamaluy, D. (2014). Quantum Transport Simulation and Optimization of Below-6-nm Si FinFETs with HfSiON/SiO2 Gate Dielectrics [Presentation]. https://www.osti.gov/biblio/1496695 Publication ID: 37616
  • Hjalmarson, H.P., McLain, M., Mamaluy, D., Gao, X., & Gao, X. (2014). Memristor Physics Driven by Joule Heating [Conference]. https://www.osti.gov/biblio/1140850 Publication ID: 96724
  • Marinella, M., Mickel, P.R., Lohn, A.J., Hughart, D.R., Bondi, R.J., Mamaluy, D., Hjalmarson, H.P., Stevens, J.E., Decker, S., Apodaca, R., Evans, B.R., Aimone, J.B., Rothganger, F., James, C.D., Debenedictis, E., & Debenedictis, E. (2014). Development, characterization, and modeling of a TaOx ReRAM for a neuromorphic accelerator [Conference Poster]. ECS Transactions. https://doi.org/10.2172/1241888 Publication ID: 38906
  • Marinella, M., Mickel, P.R., Lohn, A.J., Hughart, D.R., Bondi, R.J., Mamaluy, D., Hjalmarson, H.P., Stevens, J.E., Decker, S., Apodaca, R., Evans, B.R., Aimone, J.B., Rothganger, F., James, C.D., Debenedictis, E., & Debenedictis, E. (2014). Development, characterization, and modeling of a TaOx ReRAM for a neuromorphic accelerator [Conference Poster]. ECS Transactions. https://doi.org/10.1149/06414.0037ecst Publication ID: 38905
  • Gao, X., Mamaluy, D., Nielsen, E., Young, R.W., Muller, R.P., Bishop, N.C., Lilly, M.P., Carroll, M.S., & Carroll, M.S. (2013). Efficient self-consistent quantum transport simulator for quantum devices. Journal of Applied Physics. https://www.osti.gov/biblio/1121374 Publication ID: 31751
  • Gao, X., Mamaluy, D., Nielsen, E., Muller, R.P., Young, R.W., Bishop, N.C., Lilly, M.P., Carroll, M.S., & Carroll, M.S. (2013). Efficient Self-Consistent Quantum Transport Simulator for Quantum Well Devices [Conference]. https://www.osti.gov/biblio/1080393 Publication ID: 33805
Showing 5 of 45 publications.

Awards & Recognition

2022

Denis Mamaluy, Juan Pedro Mendez Granado, , Denis Mamaluy, FAIR DEAL Grand Challenge LDRD Project, Sandia National Laboratories , Sandia National Laboratories, Team A - INNOVATION, Divisions ESD - 5000 , May 3, 2022

2021

Denis Mamaluy, Juan Pedro Mendez Granado, , Denis Mamaluy, Recognized at D1K Tier Board, D1K Tier Board, Susan Seestrom, Recognized for https://www.nature.com/articles/s42005-021-00705-1 , October 11, 2021

2012

Denis Mamaluy, , Denis Mamaluy, Senior Member, IEEE, Senior Member is the highest professional grade of the IEEE for which a member may apply. It requires experience, and reflects professional accomplishment and maturity. Only 8% of IEEE 416,000 members have achieved this level., September 4, 2012