Miller, A.J., Brickson, M.I., Hardy, W., Liu, C., Li, J., Baczewski, A.D., Lilly, M., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2021). Measurement of the out-of-plane g-factor in strained Ge/SiGe using single-hole quantum dots [Conference Presentation]. 10.2172/1855743
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Jump to search filtersSrinivasa, V., Lewis, R.M., Tracy, L.A., Lu, T.M., Hardy, W., Brickson, M.I., Baczewski, A.D., Luhman, D.R., & Luhman, D.R. (2020). Theory of spin-orbit mediated hole spin-photon coupling in lateral Ge/SiGe quantum dots [Conference Poster]. https://www.osti.gov/biblio/1884689
Hardy, W., Su, Y., Chuang, Y., Maurer, L., Brickson, M.I., Baczewski, A.D., Li, J., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Gate-Defined Quantum Dots in Ge/SiGe Quantum Wells as a Platform for Spin Qubits [Conference Poster]. 10.1149/09201.0017ecst
Brickson, M.I., Baczewski, A.D., Hardy, W., Jacobson, N.T., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Device-level modeling of germanium hole quantum dots: Rabi frequencies with a multiband Hamiltonian [Conference Poster]. https://www.osti.gov/biblio/1641324
Lu, T.M., Li, J., Luhman, D.R., Hardy, W., Tracy, L.A., Harris, C.T., Jacobson, N.T., Baczewski, A.D., Moussa, J., Maurer, L., Brickson, M.I., Su, Y., Chou, C., Chuang, Y., Liu, C., & Liu, C. (2019). Holes in germanium quantum wells and their potential applications in quantum computing [Conference Poster]. https://www.osti.gov/biblio/1639775
Hardy, W., Su, Y., Chuang, Y., Maurer, L., Brickson, M.I., Baczewski, A.D., Li, J., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits [Conference Poster]. 10.1149/09201.0017ecst
Hardy, W., Harris, C.T., Su, Y.H., Chuang, Y., Moussa, J., Maurer, L., Li, J.Y., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Single and double hole quantum dots in strained Ge/SiGe quantum wells. Nanotechnology, 30(21). 10.1088/1361-6528/ab061e
Brickson, M.I., Baczewski, A.D., Hardy, W., Jacobson, N.T., Lu, T.M., Maurer, L., Luhman, D.R., & Luhman, D.R. (2019). Device-level modeling of hole quantum dots in Ge [Conference Poster]. https://www.osti.gov/biblio/1639283
Hardy, W., Su, Y., Chuang, Y., Maurer, L., Brickson, M.I., Baczewski, A.D., Li, J., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Improved control of quantum dots in Ge/SiGe quantum wells for spin qubit applications [Conference Poster]. https://www.osti.gov/biblio/1601749
Hardy, W., Su, Y.H., Chuang, Y., Maurer, L., Brickson, M.I., Baczewski, A.D., Li, J.Y., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits [Conference Poster]. ECS Transactions. 10.1149/09201.0017ecst
Hardy, W., Su, Y.H., Chuang, Y., Maurer, L., Brickson, M.I., Baczewski, A.D., Li, J.Y., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2019). Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits [Conference Poster]. ECS Transactions. https://doi.org/10.1149/09201.0017ecst
Brickson, M.I., Baczewski, A.D., Hardy, W., Jacobson, N.T., Maurer, L., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2018). Lithographic Quantum Dots: Modeling and Analog Quantum Simulation [Presentation]. https://www.osti.gov/biblio/1575976
Luhman, D.R., Lu, T.M., Hardy, W., Maurer, L., & Maurer, L. (2018). Hole Spin Qubits in Germanium. 10.2172/1475507
Bielejec, E.S., Hardy, W., & Hardy, W. (2018). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1592303
Hardy, W., Harris, C.T., Su, Y., Chuang, Y., Moussa, J.E., Li, J., Lu, T.M., Luhman, D.R., & Luhman, D.R. (2018). Single and Double Hole Quantum Dots in Ge/SiGe Quantum Wells [Conference Poster]. 10.1088/1361-6528/ab061e
Luhman, D.R., Lu, T.M., Hardy, W., & Hardy, W. (2018). Spin Qubits Using Holes in Strained Germanium Quantum Well Heterostructures [Conference Poster]. https://www.osti.gov/biblio/1511537
Bielejec, E.S., Hardy, W., & Hardy, W. (2018). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1503755
Bielejec, E.S., Hardy, W., & Hardy, W. (2018). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1498222
Luhman, D.R., Hardy, W., Moussa, J.E., Maurer, L., Chuang, Y., Li, J.Y., Lu, T.M., & Lu, T.M. (2018). Demonstration of a Hole Quantum dot in Ge/SiGe [Conference Poster]. https://www.osti.gov/biblio/1497548
Lu, T.M., Hardy, W., Bielejec, E.S., Perry, D.L., Ward, D.R., Wendt, J.R., Anderson, J.M., Pluym, T., Luhman, D.R., Carroll, M.S., Lilly, M., & Lilly, M. (2018). Si quantum dots with focused ion beam implanted phosphorus donors [Conference Poster]. https://www.osti.gov/biblio/1505025
Hardy, W., Bielejec, E.S., & Bielejec, E.S. (2018). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1513758
Hardy, W., Bielejec, E.S., & Bielejec, E.S. (2017). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1513581
Bielejec, E.S., Hardy, W., & Hardy, W. (2017). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1474815
Hardy, W., Bielejec, E.S., & Bielejec, E.S. (2017). Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation [Conference Poster]. https://www.osti.gov/biblio/1470838
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