Publications

Riewe, L.C., Winokur, P.S., & Winokur, P.S. (2000). Effects of Alternating Bias Irradiation on Defects in MOS Devices [Conference]. https://www.osti.gov/biblio/763107

Dodd, P., Shaneyfelt, M.R., Walsh, D.S., Schwank, J.R., Hash, G.L., Jones, R.L., Draper, B.L., Winokur, P.S., & Winokur, P.S. (2000). Single-Event Upset and Snapback in Silicon-on-Insulator Devices and Integrated Circuits. IEEE Transactions on Nuclear Science. 10.1109/23.903749

Witczak, S.C., Shaneyfelt, M.R., Schwank, J.R., Winokur, P.S., & Winokur, P.S. (2000). Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures. IEEE Transactions on Nuclear Science. https://www.osti.gov/biblio/760748

Riewe, L.C., Winokur, P.S., Sexton, F.W., & Sexton, F.W. (2000). Electrical Breakdown of Thin Oxides During Ramped Current-Temperature Stress. IEEE Transactions on Nuclear Science (Dec. 2000). 10.1109/23.903769

Shaneyfelt, M.R., Schwank, J.R., Witczak, S.C., Winokur, P.S., Riewe, L.C., Hash, G.L., & Hash, G.L. (2000). Thermal-Stress Effects and Enhanced Low Dose Rate Sensitivity in Linear Bipolar Ics. IEEE Transactions on Nuclear Science. 10.1109/23.903805

Witczak, S.C., Winokur, P.S., & Winokur, P.S. (2000). Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants. Journal of Applied Physics, 87(11), pp. 8206-8208. 10.1063/1.373522

Witczak, S.C., Schwank, J.R., Shaneyfelt, M.R., Winokur, P.S., & Winokur, P.S. (2000). Field dependent dopant deactivation in bipolar devices at elevated irradiation temperatures [Conference]. https://www.osti.gov/biblio/752170

Dodd, P., Shaneyfelt, M.R., Schwank, J.R., Hash, G.L., Draper, B.L., Winokur, P.S., & Winokur, P.S. (2000). Single-event upset and snapback in silicon-on-insulator devices [Conference]. https://www.osti.gov/biblio/751467

Shaneyfelt, M.R., Schwank, J.R., Witczak, S.C., Riewe, L.C., Winokur, P.S., Hash, G.L., & Hash, G.L. (2000). Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits [Conference]. https://www.osti.gov/biblio/751354

Riewe, L.C., Winokur, P.S., Sexton, F.W., & Sexton, F.W. (2000). Electrical breakdown in thin oxides during bias-temperature ramps [Conference]. https://www.osti.gov/biblio/751183

Winokur, P.S. (2000). Why semiconductors must be hardened when used in space. https://www.osti.gov/biblio/750190

Winokur, P.S. (1999). Design Guidelines for the Use of COTS in Military and Space Systems [Conference]. https://www.osti.gov/biblio/4265

Winokur, P.S. (1999). Use of COTS microelectronics in radiation environments. IEEE Transactions on Nuclear Science, 46(6 PART 1), pp. 1494-1503. 10.1109/23.819113

Winokur, P.S. (1990). Implementing QML for radiation hardness assurance [Conference]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0025597505&origin=inward

Winokur, P.S. (1989). Total-dose radiation hardness assurance for space electronics [Conference]. https://www.osti.gov/biblio/6240274