Publications

Yates, L., Binder, A., Allerman, A., Armstrong, A., Steinfeldt, J.A., Smith, M.L., Foulk, J.W., Rice, A., Kaplar, R., Vuong, H., & Vuong, H. (2024). High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown [Conference Paper]. https://www.osti.gov/biblio/2540489

Allerman, A., Binder, A., Armstrong, A., Steinfeldt, J.A., Yates, L., Vuong, H., Smith, M.L., Kaplar, R., & Kaplar, R. (2024). In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes [Conference Presentation]. 10.2172/2540449

Yates, L., Binder, A., Rice, A., Steinfeldt, J.A., Vuong, H., Smith, M.L., Armstrong, A., Allerman, A., Crawford, M.H., Gunning, B.P., Kaplar, R., & Kaplar, R. (2024). Development of Medium-Voltage High-Current Vertical GaN Power Devices [Conference Presentation]. 10.2172/2540432

Binder, A., Steinfeldt, J.A., Allerman, A., Glaser, C.E., Yates, L., Foulk, J.W., Smith, M.L., Rummel, B.D., Reilly, K.J., Sharps, P., Kaplar, R., Cooper, J.A., & Cooper, J.A. (2023). Advanced Design Concepts for Vertical Gallium Nitride MOSFETs [Conference Presentation]. 10.2172/2584887

Thrasher, D.A., Schwindt, P.D., Skogen, E.J., Fortuna, S.A., Alford, C., Smith, M.L., Subramania, G.S., Mondragon, J.J., Garcia, E., Rice, A., Jau, Y., & Jau, Y. (2023). Performance of a 3 cc Yb+ trap as a microwave clock after 10 years [Conference Presentation]. 10.2172/2431332

Yates, L., Binder, A., Rummel, B.D., Gunning, B., Crawford, M., Smith, M.L., Armstrong, A., Allerman, A., Steinfeldt, J.A., Rice, A., Kaplar, R., & Kaplar, R. (2023). Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments [Conference Presentation]. 10.2172/2432069

Kaplar, R., Yates, L., Binder, A., Allerman, A., Armstrong, A., Steinfeldt, J.A., Smith, M.L., Rice, A., Crawford, M., Gunning, B., Aktas, O., & Aktas, O. (2023). Progress in Medium-Voltage Vertical GaN Power Devices [Conference Presentation]. 10.2172/2431941

Allerman, A., Armstrong, A., Binder, A., Yates, L., Kaplar, R., Steinfeldt, J.A., Smith, M.L., & Smith, M.L. (2023). Demonstration of a Merged Pin Schottky in 30% AlGaN [Conference Presentation]. 10.2172/2431933

Allerman, A., Crawford, M., Armstrong, A., Klein, B., Binder, A., Yates, L., Kaplar, R., Steinfeldt, J.A., Smith, M.L., & Smith, M.L. (2022). Ultra-Wide Bandgap AlGaN Alloys for Power Electronics (invited) [Conference Presentation]. 10.2172/2005973

Yates, L., Gunning, B.P., Crawford, M.H., Steinfeldt, J.A., Smith, M.L., Abate, V.M., Dickerson, J., Armstrong, A., Binder, A., Allerman, A., Kaplar, R., & Kaplar, R. (2022). Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions. IEEE Transactions on Electron Devices, 69(4), pp. 1931-1937. 10.1109/ted.2022.3154665

Kaplar, R., Binder, A., Crawford, M.H., Allerman, A., Gunning, B.P., Flicker, J.D., Yates, L., Armstrong, A., Dickerson, J., Glaser, C.E., Steinfeldt, J.A., Abate, V.M., Smith, M.L., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., … Cooper, J.A. (2022). Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited) [Conference Presentation]. 10.2172/2001791

Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M.L., Pickrell, G.W., Sharps, P., Neely, J.C., Rashkin, L.J., Gill, L., Goodrick, K., Anderson, T., Gallagher, J., … Cooper, J.A. (2021). Recent Progress in Vertical Gallium Nitride Power Devices [Conference Presentation]. 10.2172/1900106

Skogen, E.J., Fortuna, S.A., Allerman, A., Smith, M.L., Alford, C., Crawford, M.H., & Crawford, M.H. (2021). High-Brightness Ultraviolet Lasers for Leap-Ahead National Security Applications. 10.2172/1832307

Rice, A., Allerman, A., Crawford, M.H., Smith, M.L., Pickrell, G.W., Sharps, P., & Sharps, P. (2019). Thick Boron Nitride Films by MOVPE [Conference Poster]. https://www.osti.gov/biblio/1641390

Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Abate, V.M., Smith, M.L., Cross, K.C., & Cross, K.C. (2018). The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates (invited) [Conference Poster]. https://www.osti.gov/biblio/1582257

Crawford, M.H., Allerman, A., Armstrong, A., Kaplar, R., Pickrell, G.W., Dickerson, J., Smith, M.L., Cross, K.C., Abate, V.M., Glaser, C.E., van Heukelom, M., & van Heukelom, M. (2018). Materials Challenges of AlGaN-Based Power Electronics and UV Lasers (invited) [Conference Poster]. https://www.osti.gov/biblio/1524137

Allerman, A., Rice, A., Crawford, M.H., Foulk, J.W., Ohta, T., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2018). Chemical Vapor Deposition of Hexagonal Boron Nitride (invited) [Conference Poster]. https://www.osti.gov/biblio/1525587

Rice, A., Allerman, A., Crawford, M.H., Foulk, J.W., Ohta, T., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2018). Metal-Organic Chemical Vapor Deposition of Hexagonal Boron Nitride (invited) [Conference Poster]. https://www.osti.gov/biblio/1513705

Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Abate, V.M., Smith, M.L., Cross, K.C., & Cross, K.C. (2017). The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates [Conference Poster]. https://www.osti.gov/biblio/1484085

Crawford, M.H., Rice, A., Allerman, A., Foulk, J.W., Ohta, T., Medlin, D.L., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2017). Properties of Hexagonal BN Grown by High Temperature Metal-Organic Vapor Phase Epitaxy [Conference Poster]. https://www.osti.gov/biblio/1482470

Rice, A., Allerman, A., Crawford, M.H., Foulk, J.W., Ohta, T., Medlin, D.L., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2017). Effects of Deposition Temperature and Ammonia Flow on MOCVD Hexagonal Boron Nitride [Conference Poster]. https://www.osti.gov/biblio/1478153

Rice, A., Allerman, A., Crawford, M.H., Foulk, J.W., Ohta, T., Medlin, D.L., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2017). Vapor Phase Epitaxy of Hexagonal Boron Nitride [Conference Poster]. https://www.osti.gov/biblio/1462924

Rice, A., Allerman, A., Crawford, M.H., Foulk, J.W., Ohta, T., Spataru, C.D., Medlin, D.L., Figiel, J.J., Smith, M.L., & Smith, M.L. (2017). Effects of Deposition Temperature and Ammonia Flow on MOCVD Hexagonal Boron Nitride [Conference Poster]. https://www.osti.gov/biblio/1459602

Rice, A., Allerman, A., Crawford, M.H., Foulk, J.W., Ohta, T., Medlin, D.L., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2017). Effects of Temperature and Ammonia on MOCVD Hexagonal BN [Conference Poster]. https://www.osti.gov/biblio/1456484

Crawford, M.H., Allerman, A., Rice, A., Foulk, J.W., Ohta, T., Medlin, D.L., Spataru, C.D., Figiel, J.J., Smith, M.L., & Smith, M.L. (2016). Excitonic Properties of Hexagonal BN Grown by High-Temperature Metal-Organic Vapor Phase Epitaxy [Conference Poster]. https://www.osti.gov/biblio/1404793