Publications

Black, J.D., Dame, J.A., Black, D.A., Dodd, P., Shaneyfelt, M.R., Teifel, J., Salas, J.G., Steinbach, R., Davis, M., Reed, R.A., Weller, R.A., Trippe, J., Warren, K.M., Tonigan, A.M., Schrimpf, R.D., Marquez, R.S., & Marquez, R.S. (2019). Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts [Conference Poster]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2018.2882944

Black, J.D., Dame, J.A., Black, D.A., Dodd, P., Shaneyfelt, M.R., Teifel, J., Salas, J.G., Steinbach, R., Davis, M., Reed, R.A., Weller, R.A., Trippe, J., Warren, K.M., Tonigan, A.M., Schrimpf, R.D., Marquez, R.S., & Marquez, R.S. (2019). Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts [Conference Poster]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057364495&origin=inward

King, M.P., Massey, G., Silva, A., Cannon, E., Shaneyfelt, M.R., Loveless, T., Ballast, J., Cabanas-Holmen, M., Digregorio, S.J., Rice, W.C., Draper, B.L., Oldgies, P., Rodbell, K., & Rodbell, K. (2018). TID-Induced Leakage and Drive Characteristics of Planar 22-nm PDSOI and 14-nm Bulk and Quasi-SOI FinFET Devices [Conference Poster]. https://www.osti.gov/biblio/1570155

McLain, M., McDonald, J.K., Hartman, F., Sheridan, T.J., Dodd, P., Shaneyfelt, M.R., Hembree, C., Black, D.A., Weingartner, T.A., & Weingartner, T.A. (2017). Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models. IEEE Transactions on Nuclear Science, 65(1). 10.1109/TNS.2017.2764799

McLain, M., McDonald, J.K., Hembree, C., Sheridan, T.J., Weingartner, T.A., Dodd, P., Shaneyfelt, M.R., Hartman, F., Black, D.A., & Black, D.A. (2017). Understanding the Implications of a LINAC?s Microstructure on Photocurrent Modeling [Conference Poster]. https://www.osti.gov/biblio/1509653

King, M.P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M.R., Silva, A.I., Draper, B.L., Rice, W.C., Meisenheimer, T.L., Zhang, E.X., Haeffner, T.D., Ball, D.R., Shetler, K.J., Alles, M.L., Kauppila, J.S., Massengill, L.W., & Massengill, L.W. (2017). Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance [Conference Poster]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2016.2634538

Shaneyfelt, M.R., Dodds, N.A., & Dodds, N.A. (2017). Upsets in Erased Floating Gate Cells with High-Energy Protons. IEEE Transactions on Nuclear Science, 64(1), pp. 421-426. 10.1109/tns.2016.2636830

King, M.P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M.R., Silva, A.I., Draper, B.L., Rice, W.C., Meisenheimer, T.L., Zhang, E.X., Haeffner, T.D., Ball, D.R., Shetler, K.J., Alles, M.L., Kauppila, J.S., Massengill, L.W., & Massengill, L.W. (2016). Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. IEEE Transactions on Nuclear Science. 10.1109/tns.2016.2634538

Dodds, N.A., Martinez, M., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Black, J.D., Lee, D.S., Swanson, S.E., Bhuva, B.L., Warren, K.M., Reed, R.A., Trippe, J., Sierawski, B.D., Weller, R.A., Mahatme, N., Gaspard, N.J., Assis, T., Austin, R., Massengill, L.W., … Puchner, H. (2015). The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate [Conference Poster]. IEEE Transactions on Nuclear Science. https://doi.org/10.1109/TNS.2015.2486763

Dodds, N.A., Martinez, M., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Black, J.D., Lee, D.S., Swanson, S.E., Bhuva, B.L., Warren, K.M., Reed, R.A., Trippe, J., Sierawski, B.D., Weller, R.A., Mahatme, N., Gaspard, N.J., Assis, T., Austin, R., Massengill, L.W., … Puchner, H. (2015). The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate [Conference Poster]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2015.2486763

Dodds, N.A., Martinez, M., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Black, J.D., Lee, D.S., Swanson, S.E., Bhuva, B.L., Warren, K.M., Reed, R.A., Trippe, J., Sierawski, B.D., Weller, R.A., Mahatme, N., Gaspard, N.J., Assis, T.R., Austin, R., Weeden-Wright, S.L., … Puchner, H. (2015). Outstanding Conference Paper Award: 2015 IEEE Nuclear and Space Radiation Effects Conference. IEEE Transactions on Nuclear Science, 62(6). 10.1109/TNS.2015.2502501

Dodds, N.A., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Martinez, M., Black, J.D., Marshall, P.W., Reed, R.A., McCurdy, M.W., Weller, R.A., Pellish, J.A., Rodbell, K.P., Gordon, M.S., & Gordon, M.S. (2015). New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle. IEEE Transactions on Nuclear Science, 62(6). 10.1109/TNS.2015.2488588

Dodds, N.A., Martinez, M., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Black, J.D., Lee, D.S., Swanson, S.E., Bhuva, B.L., Warren, K.M., Reed, R.A., Trippe, J., Sierawski, B.D., Weller, R.A., Mahatme, N., Gaspard, N., Assis, T., Austin, R., Massengill, L.M., … Puchner, H. (2015). The contribution of low-energy protons to the total on-orbit SEU rate. IEEE Transactions on Nuclear Science, 62(6). 10.1109/TNS.2015.2486763

Dodds, N.A., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Martinez, M., Black, J.D., Marshall, P., Reed, R., McCurdy, M., Weller, R., Pellish, J., Rodbell, K., Gordon, M., & Gordon, M. (2015). New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle [Conference Poster]. https://doi.org/10.1109/TNS.2015.2488588

Dodds, N.A., Dodd, P., Shaneyfelt, M.R., Sexton, F.W., Martinez, M., Black, J.D., Marshall, P., Reed, R., McCurdy, M., Weller, R., Pellish, J., Rodbell, K., Gordon, M., & Gordon, M. (2015). New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle [Conference Poster]. 10.1109/TNS.2015.2488588

Black, J.D., Dodds, N.A., Dodd, P., Shaneyfelt, M.R., Martinez, M., Teifel, J., Pearson, S., Ma, K., & Ma, K. (2015). Single Event Effects Testing Results in Sandia National Laboratories Via Programmable ASIC Platforms [Conference Poster]. https://www.osti.gov/biblio/1258175

Hughart, D.R., Lohn, A., Mickel, P.R., Bielejec, E.S., Vizkelethy, G., Doyle, B.L., Wolfley, S., Dodd, P., Shaneyfelt, M.R., McLain, M., Marinella, M., & Marinella, M. (2015). Resistive Memory for Space Applications [Conference Poster]. https://www.osti.gov/biblio/1255769

Hughart, D.R., Pacheco, J.L., Lohn, A.J., Mickel, P.R., Bielejec, E.S., Vizkelethy, G., Doyle, B.L., Wolfley, S., Dodd, P., Shaneyfelt, M.R., McLain, M., Marinella, M., & Marinella, M. (2014). Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors [Presentation]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84919791298&origin=inward

Hughart, D.R., Pacheco, J.L., Lohn, A.J., Mickel, P.R., Bielejec, E.S., Vizkelethy, G., Doyle, B.L., Wolfley, S., Dodd, P., Shaneyfelt, M.R., McLain, M., Marinella, M., & Marinella, M. (2014). Mapping of radiation-induced resistance changes and multiple conduction channels in TaOx memristors [Conference Poster]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84919791298&origin=inward

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., Sexton, F.W., Martinez, M., & Martinez, M. (2014). Outstanding conference paper award 2014 IEEE nuclear and space radiation effects conference. IEEE Transactions on Nuclear Science, 61(6). 10.1109/TNS.2014.2372833

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., Sexton, F.W., Martinez, M., & Martinez, M. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam. IEEE Transactions on Nuclear Science, 61(6). 10.1109/TNS.2014.2364953

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M.C., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., & van Deusen, S.B. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam [Presentation]. 10.1109/TNS.2014.2364953

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., & van Deusen, S.B. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam [Conference Poster]. https://doi.org/10.1109/TNS.2014.2364953

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Swanson, S.E., van Deusen, S.B., & van Deusen, S.B. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam [Conference]. https://doi.org/10.1109/TNS.2014.2364953

Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2014). SEGR in SiO${}_2$ –Si$_3$ N$_4$ Stacks. IEEE Transactions on Nuclear Science, 61(4), pp. 1902-1908. https://doi.org/10.1109/TNS.2014.2303493

Hughart, D.R., Marshall, M., McLain, M., Marinella, M., Lohn, A.J., Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Silva, A.I., Bielejec, E.S., & Bielejec, E.S. (2013). Displacement Damage and Ionization Effects in TaOx and TiO2 Memristors [Presentation]. https://www.osti.gov/biblio/1682565

Hughart, D.R., Lohn, A.J., Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Vizkelethy, G., McLain, M., Marinella, M., & Marinella, M. (2013). Radiation-Induced Resistance Changes in TaOx and TiO2 Memristors [Presentation]. https://www.osti.gov/biblio/1114629

Lohn, A.J., McLain, M., Marinella, M., Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Marshall, M., & Marshall, M. (2013). A Comparison of the Radiation Response of TaOx and TiO2 Memristors [Conference]. https://www.osti.gov/biblio/1115281

Lohn, A.J., McLain, M., Marinella, M., Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Marshall, M., & Marshall, M. (2013). A Comparison of the Radiation Response of TaOx and TiO2 Memristors [Conference]. https://www.osti.gov/biblio/1106767

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2013). Radiation hardness assurance testing of microelectronic devices and integrated circuits: Test guideline for proton and heavy ion single-event effects [Presentation]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2013.2261317

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2013). Radiation hardness assurance testing of microelectronic devices and integrated circuits: Radiation environments, physical mechanisms, and foundations for hardness assurance [Presentation]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2013.2254722

Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Vizkelethy, G., Marinella, M., & Marinella, M. (2013). Radiation Effects on TaOx ReRAM: A Candidate for Rad-Hard Memory [Conference]. https://www.osti.gov/biblio/1081440

Hughart, D.R., Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Vizkelethy, G., Marinella, M., & Marinella, M. (2013). Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories [Conference]. https://www.osti.gov/biblio/1314470

Hughart, D.R., Marinella, M., Mickel, P.R., Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Vizkelethy, G., & Vizkelethy, G. (2013). Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories [Conference]. https://www.osti.gov/biblio/1063586

Dodd, P., Shaneyfelt, M.R., Bielejec, E.S., Vizkelethy, G., Kotula, P.G., Mickel, P.R., & Mickel, P.R. (2012). Radiation Effects in TaOx Memristors [Conference]. https://www.osti.gov/biblio/1116793

Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Stevens, J., Vizkelethy, G., Swanson, S.E., & Swanson, S.E. (2012). SOI substrate removal for SEE characterization: Techniques and applications [Conference]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84865375220&origin=inward

Schwank, J.R., Shaneyfelt, M.R., Ferlet-Cavrois, V., Dodd, P., Blackmore, E.W., Pellish, J.A., Rodbell, K.P., Heidel, D.F., Marshall, P.W., LaBel, K.A., Gouker, P.M., Tam, N., Wong, R., Wen, S.-J., Reed, R.A., Dalton, S.M., Swanson, S.E., & Swanson, S.E. (2011). Hardness assurance testing for proton direct ionization effects [Conference]. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84860210709&origin=inward

Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Stevens, J., Swanson, S.E., & Swanson, S.E. (2011). SOI Substrate Removal for SEE Characterization and Recent Results [Presentation]. https://www.osti.gov/biblio/1106398

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Swanson, S.E., & Swanson, S.E. (2011). Hardness assurance testing for proton direct ionization effects. European Space Agency, [Special Publication] ESA SP. https://doi.org/10.1109/RADECS.2011.6131454

Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2011). Radiation Effects in 3D Integrated SOI SRAM Circuits. IEEE Transactions on Nuclear Science, Dec. 2011. https://www.osti.gov/biblio/1106916

Dodd, P., Shaneyfelt, M.R., Flores, R.S., Schwank, J.R., Hill, T.A., Swanson, S.E., & Swanson, S.E. (2011). Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains. IEEE Transactions on Nuclear Science, 58(6). https://doi.org/10.1109/TNS.2011.2169683

Dodd, P., Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2011). Characterization of the Two-Photon Absorption Carrier Generation Region in Bulk Silicon Diodes. IEEE Transactions on Nuclear Science (Dec. 2011). https://www.osti.gov/biblio/1106707

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2011). Proton Irradiation Effects in Semiconductor Devices--S1328 [Presentation]. https://www.osti.gov/biblio/1661823

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Swanson, S.E., & Swanson, S.E. (2011). Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs. IEEE Transactions on Nuclear Science, Dec. 2011, 58(6). https://doi.org/10.1109/TNS.2011.2171006

Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2011). Proton-induced Upsets in 41-nm NAND Floating Gate Cells [Conference]. https://www.osti.gov/biblio/1109275

Dodd, P., Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2011). Characterization of the Two-Photon Absorption Carrier Generation Region in Bulk Silicon Diodes [Conference]. https://www.osti.gov/biblio/1109289

Dodd, P., Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2011). The Effect of Neutron Energy on Single Event Upsets and Multiple Bit Upsets [Conference]. https://www.osti.gov/biblio/1109332

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Swanson, S.E., & Swanson, S.E. (2011). Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs [Conference]. https://www.osti.gov/biblio/1109305

Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2011). Radiation Effects in 3D Integrated SOI SRAM Circuits [Conference]. https://www.osti.gov/biblio/1120835

Dodd, P., Shaneyfelt, M.R., Flores, R.S., Schwank, J.R., Hill, T.A., Swanson, S.E., & Swanson, S.E. (2011). Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains [Conference]. https://www.osti.gov/biblio/1109308

Harper-Slaboszewicz, V., Hartman, F., Shaneyfelt, M.R., Schwank, J.R., Sheridan, T.J., & Sheridan, T.J. (2010). Dosimetry experiments at the MEDUSA Facility (Little Mountain). 10.2172/1005057

Dodd, P., Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2010). Challenges in radiation effects on CMOS and power electronics [Conference]. https://www.osti.gov/biblio/1027007

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Flores, R.S., Stevens, J., Swanson, S.E., & Swanson, S.E. (2010). Direct Comparison of Charge Collection from Single-Photon and Two-Photon Laser Testing Techniques. IEEE Transactions on Nuclear Science. https://www.osti.gov/biblio/1141813

Witcher, J., Savignon, D.J., Dodd, P., Shaneyfelt, M.R., Young, R.W., Draper, B.L., Schwank, J.R., & Schwank, J.R. (2010). Radiation-hardened distributed power systems [Conference]. https://www.osti.gov/biblio/1028959

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Flores, R.S., Stevens, J., Swanson, S.E., & Swanson, S.E. (2010). Direct comparison of charge collection from single-photon and two-photon laser testing techniques [Conference]. https://www.osti.gov/biblio/991010

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Flores, R.S., Stevens, J., Swanson, S.E., & Swanson, S.E. (2010). Direct comparison of charge collection from single-photon and two-photon laser testing techniques [Conference]. https://www.osti.gov/biblio/991855

Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Hill, T.A., Swanson, S.E., & Swanson, S.E. (2009). Effects of moisture on radiation-induced degradation in CMOS SOI transistors [Conference]. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80052698336&origin=inward

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Felix, J.A., Baggio, J., Ferlet-Cavrois, V., Paillet, P., Label, K.A., Pease, R.L., Simons, M., Cohn, L.M., & Cohn, L.M. (2009). Hardness assurance test guideline for qualifying devices for use in proton environments [Conference]. IEEE Transactions on Nuclear Science. https://doi.org/10.1109/TNS.2009.2013239

Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2009). Moisture Effects on MOS Devices [Conference]. https://www.osti.gov/biblio/1142363

Schwank, J.R., Dodd, P., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2008). A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation. IEEE Transactions on Nuclear Science (RADECS 09 issue). https://www.osti.gov/biblio/1142375

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Felix, J.A., & Felix, J.A. (2008). Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments. IEEE Transactions on Nuclear Science (RADECS 09 issue). https://www.osti.gov/biblio/1142348

Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Felix, J.A., & Felix, J.A. (2008). Total ionizing dose and single event effects hardness assurance qualification issues for microelectronics. IEEE Transactions on Nuclear Science, 55(4), pp. 1926-1946. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=53349153342&origin=inward

Shaneyfelt, M.R. (2008). Post-irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides. IEEE Transactions on Nuclear Science. https://www.osti.gov/biblio/1143031

Schwank, J.R., Flores, R.S., Dodd, P., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2008). Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains. IEEE Transactions on Nuclear Science. https://www.osti.gov/biblio/1143129

Okandan, M., Draper, B.L., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2008). Gate-all-around silicon nano-wire transistors fabricated in front end CMOS process. Proposed for publication in Applied Physics Letters.. https://www.osti.gov/biblio/948680

Shaneyfelt, M.R., Felix, J.A., Dodd, P., Schwank, J.R., & Schwank, J.R. (2008). Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing. IEEE Transactions on Nuclear Science, 55(6). https://doi.org/10.1109/TNS.2008.2007124

Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Dodd, P., Swanson, S.E., Thornberg, S.M., Hochrein, J.M., & Hochrein, J.M. (2008). Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. IEEE Transactions on Nuclear Science, 55(6). https://doi.org/10.1109/TNS.2008.2005676

Draper, B.L., Shaneyfelt, M.R., Murray, J.R., Habermehl, S.D., & Habermehl, S.D. (2008). Radiation Response of NROM-Style SOI Non-Volatile Memory Elements [Conference]. https://www.osti.gov/biblio/1143107

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2008). Proton and Alpha Particle SEU Test Results on a 65nm SRAM Fabricated in IBM's SOI Process [Conference]. https://www.osti.gov/biblio/1145641

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Felix, J.A., & Felix, J.A. (2008). Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments [Conference]. https://doi.org/10.1109/TNS.2009.2013239

Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Dodd, P., & Dodd, P. (2008). Effects of moisture exposure on radiation-induced MOS device degradation and its implications for long-term aging [Conference]. https://www.osti.gov/biblio/942197

Shaneyfelt, M.R., Felix, J.A., Schwank, J.R., Dodd, P., & Dodd, P. (2008). Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing [Conference]. https://www.osti.gov/biblio/1146194

Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2008). Direct Evidence of Secondary Events Induced by High Energy Protons [Conference]. https://www.osti.gov/biblio/1146054

Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Schwank, J.R., Shaneyfelt, M.R., Paillet, P., & Paillet, P. (2007). Total ionizing dose effects in NOR and NAND flash memories [Conference]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34548065398&origin=inward

Shaneyfelt, M.R. (2007). Total dose and SEU hardness assurance qualification issues for microelectronics [Conference]. https://www.osti.gov/biblio/1268236

Dodd, P., Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., & Felix, J.A. (2007). Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits. IEEE Transactions on Nuclear Science, Dec. 2007. https://doi.org/10.1109/TNS.2007.909844

Felix, J.A., Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Witcher, J., & Witcher, J. (2007). Power MOSFET Degradation in Space Radiation Environments. IEEE Transactions on Nuclear Science, Dec. 2007. https://www.osti.gov/biblio/1147237

Felix, J.A., Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Witcher, J., & Witcher, J. (2007). Degradation of Power MOSFET Devices in Space Radiation Environments [Presentation]. https://www.osti.gov/biblio/1722833

Felix, J.A., Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Witcher, J., & Witcher, J. (2007). Power MOSFET Degradation in Space Radiation Environments [Conference]. https://www.osti.gov/biblio/1137318

Felix, J.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2007). Test Procedures for Proton-Induced Single Event Effects in Space Environments [Conference]. https://www.osti.gov/biblio/1148445

Dodd, P., Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., & Felix, J.A. (2007). Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits [Conference]. https://www.osti.gov/biblio/1137277

Schroeder, J.L., Dodd, P., Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., & Felix, J.A. (2007). Tungsten-Filled Silicone Composites for Moderating Proton Radiation Effects in Electronics. IEEE Trans. Nucl. Sci.. https://www.osti.gov/biblio/1148416

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Felix, J.A., & Felix, J.A. (2006). Hardness Assurance Issues for Proton Testing for Space Environments [Conference]. https://www.osti.gov/biblio/1142196

Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Dodd, P., Baggio, J., Ferlet-Cavrois, V., Paillet, P., Hash, G.L., Flores, R.S., Massengill, L.W., Blackmore, E., & Blackmore, E. (2006). Effects of total dose irradiation on single-event upset hardness [Conference]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33748345155&origin=inward

Shaneyfelt, M.R., Maher, M.C., Camilletti, R.C., Schwank, J.R., Pease, R.L., Russell, B.A., Dodd, P., & Dodd, P. (2006). Elimination of enhanced low-dose-rate sensitivity in linear bipolar devices using silicon-carbide passivation [Conference]. IEEE Transactions on Nuclear Science. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33748347314&origin=inward

Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Felix, J.A., & Felix, J.A. (2006). Single-Event Effects Testing for Proton Environments [Presentation]. https://www.osti.gov/biblio/1729800

Felix, J.A., Dodd, P., Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2006). Radiation response and variability of advanced commercial foundry technologies [Conference]. https://www.osti.gov/biblio/901404

Shaneyfelt, M.R., Schwank, J.R., Dodd, P., Felix, J.A., & Felix, J.A. (2006). Implications of characterization temperature on hardness assurance qualification [Conference]. https://www.osti.gov/biblio/900403

Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Dodd, P., & Dodd, P. (2006). Effects of angle of incidence on proton-induced single-event latchup [Conference]. https://www.osti.gov/biblio/1264222

Schwank, J.R., Shaneyfelt, M.R., Baggio, J., Dodd, P., Felix, J.A., Ferlet-Cavrois, V., Paillet, P., Lambert, D., Sexton, F.W., Hash, G.L., Blackmore, E., & Blackmore, E. (2005). Effects of particle energy on proton-induced single-event latchup. IEEE Transactions on Nuclear Science, 52(6), pp. 2622-2629. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33144473064&origin=inward

Felix, J.A., Shaneyfelt, M.R., Dodd, P., Draper, B.L., Schwank, J.R., Dalton, S.M., & Dalton, S.M. (2005). Radiation-induced off-state leakage current in commercial power MOSFETs. Proposed for publication in the IEEE Transactions on Nuclear Science.. https://www.osti.gov/biblio/970711

Draper, B.L., Shaneyfelt, M.R., Young, R.W., Headley, T.J., Dondero, R., & Dondero, R. (2005). Arsenic ion implant energy effects on CMOS gate oxide hardness. Proposed for publication in the IEEE Transactions on Nuclear Science.. https://www.osti.gov/biblio/970707

Schwank, J.R., Shaneyfelt, M.R., & Shaneyfelt, M.R. (2005). Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices. Proposed for publication in the IEEE Transactions on Nuclear Science.. https://www.osti.gov/biblio/970705

Webster, J., Dyck, C., Nordquist, C.D., Felix, J.A., Shaneyfelt, M.R., Schwank, J.R., Banks, J.C., & Banks, J.C. (2005). Process-induced trapping of charge in PECVD dielectrics for RF MEMS capacitive switches [Conference]. https://www.osti.gov/biblio/948328

Shaneyfelt, M.R. (2005). Verification of radiation induced oxide and interface trap buildup using combined bipolar and MOS characterization methods in gated bipolar devices [Conference]. https://www.osti.gov/biblio/948664

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Felix, J.A., Hash, G.L., & Hash, G.L. (2005). Effects of particle energy on proton and neutron-induced single-event latchup [Conference]. https://www.osti.gov/biblio/988973

Felix, J.A., Shaneyfelt, M.R., Dodd, P., Draper, B.L., Schwank, J.R., & Schwank, J.R. (2005). Radiation-induced off-state leakage current in commercial power MOSFETs [Conference]. https://www.osti.gov/biblio/988971

Doyle, B.L., Dodd, P., Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2004). Radiation effects microscopy for failure analysis of microelectronic devices [Conference]. https://www.osti.gov/biblio/964592

Webster, J., Dyck, C., Nordquist, C.D., Felix, J.A., Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2004). Process-induced trapping of charge in PECVD dielectrics for RF MEMS capacitive switches [Conference]. https://www.osti.gov/biblio/876250

Tangyunyong, P., Headley, T.J., Rye, M.J., Hill, T.A., Nakakura, C.Y., Soden, J., Colr, E.I., Flores, R.S., Shaneyfelt, M.R., Dockerty, R.C., & Dockerty, R.C. (2003). Novel application of transmission electron microscopy and scanning capacitance microscopy for defect root cause identification and yield enhancement [Conference]. https://www.osti.gov/biblio/1004355