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Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., Sexton, F.W., Martinez, M., & Martinez, M. (2014). Outstanding conference paper award 2014 IEEE nuclear and space radiation effects conference. IEEE Transactions on Nuclear Science, 61(6). 10.1109/TNS.2014.2372833

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., Sexton, F.W., Martinez, M., & Martinez, M. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam. IEEE Transactions on Nuclear Science, 61(6). 10.1109/TNS.2014.2364953

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., & van Deusen, S.B. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam [Conference Poster]. https://doi.org/10.1109/TNS.2014.2364953

Dodds, N.A., Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Doyle, B.L., Trinczek, M.C., Blackmore, E.W., Rodbell, K.P., Reed, R.A., Pellish, J.A., Label, K.A., Marshall, P.W., Swanson, S.E., Vizkelethy, G., van Deusen, S.B., & van Deusen, S.B. (2014). Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam [Presentation]. 10.1109/TNS.2014.2364953

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2013). Radiation hardness assurance testing of microelectronic devices and integrated circuits: Test guideline for proton and heavy ion single-event effects [Presentation]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2013.2261317

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., & Dodd, P. (2013). Radiation hardness assurance testing of microelectronic devices and integrated circuits: Radiation environments, physical mechanisms, and foundations for hardness assurance [Presentation]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2013.2254722

Schwank, J.R., Shaneyfelt, M.R., Ferlet-Cavrois, V., Dodd, P., Blackmore, E.W., Pellish, J.A., Rodbell, K.P., Heidel, D.F., Marshall, P.W., LaBel, K.A., Gouker, P.M., Tam, N., Wong, R., Wen, S.-J., Reed, R.A., Dalton, S.M., Swanson, S.E., & Swanson, S.E. (2011). Hardness assurance testing for proton direct ionization effects [Conference]. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84860210709&origin=inward

Dodd, P., Shaneyfelt, M.R., Flores, R.S., Schwank, J.R., Hill, T.A., Swanson, S.E., & Swanson, S.E. (2011). Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains. IEEE Transactions on Nuclear Science, 58(6). https://doi.org/10.1109/TNS.2011.2169683

Dodd, P., Shaneyfelt, M.R., Schwank, J.R., & Schwank, J.R. (2011). Characterization of the Two-Photon Absorption Carrier Generation Region in Bulk Silicon Diodes. IEEE Transactions on Nuclear Science (Dec. 2011). https://www.osti.gov/biblio/1106707

Schwank, J.R., Shaneyfelt, M.R., Dodd, P., Swanson, S.E., & Swanson, S.E. (2011). Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs. IEEE Transactions on Nuclear Science, Dec. 2011, 58(6). https://doi.org/10.1109/TNS.2011.2171006

Results 1–25 of 112
Results 1–25 of 112