Publications

Sharov, F.V., Moxim, S.J., Haase, G.S., Hughart, D.R., McKay, C.G., Lenahan, P.M., & Lenahan, P.M. (2022). Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022). IEEE Transactions on Device and Materials Reliability, 22(3), pp. 322-331. 10.1109/tdmr.2022.3186232

Spear, M., Wallace, T., Wilson, D.E., Solano, J., Irumva, G., Esqueda, I.S., Barnaby, H.J., Clark, L., Brunhaver, J., Turowski, M., Mikkola, E., Hughart, D.R., Young, J.M., Manuel, J., Agarwal, S., Vaandrager, B.L., Vizkelethy, G., Gutierrez, A., Trippe, J., … Marinella, M. (2022). Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits [Conference Poster]. 10.2172/2004078

Spear, M., Wallace, T., Wilson, D.E., Solano, J., Irumva, G., Esqueda, I.S., Barnaby, H.J., Clark, L., Brunhaver, J., Turowski, M., Mikkola, E., Hughart, D.R., Young, J.M., Manuel, J., Agarwal, S., Vaandrager, B.L., Vizkelethy, G., King, M.P., Marinella, M., & Marinella, M. (2022). Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits [Conference Proceeding]. https://www.osti.gov/biblio/2004036

Wallace, T., Spear, M., Privat, A., Neuendank, J., Irumva, G., Wilson, D.E., Esqueda, I.S., Barnaby, H.J., Turowski, M., Mikkola, E., Gutierrez, A., Hughart, D.R., Marinella, M., Vonniederhausern, R., Holloway, S., Beltran, D., & Beltran, D. (2022). Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Digital Structures [Conference Presenation]. 10.2172/2004075

Marinella, M., Xiao, T.P., Bennett, C., Wahby, W., Jacobs-Gedrim, R.B., Hughart, D.R., Fuller, E.J., Talin, A.A., Agarwal, S., & Agarwal, S. (2022). Characterization of Memory Devices for Energy Efficient Analog In-Memory Neural Computing at the Edge [Conference Presenation]. 10.2172/2003029

Hughart, D.R., Brumbach, M.T., Marinella, M., James, C.D., Finnegan, P.S., Goeke, R.S., & Goeke, R.S. (2022). Defect Transport Studies in TaOx [Conference Poster]. https://www.osti.gov/biblio/2002931

Sharov, F.V., Moxim, S.J., Haase, G.S., Hughart, D.R., Lenahan, P.M., & Lenahan, P.M. (2022). A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO MOSFETs via Electrically Detected Magnetic Resonance [Conference Paper]. IEEE Transactions on Nuclear Science. 10.1109/TNS.2022.3150979

Xiao, T.P., Bennett, C., Agarwal, S., Hughart, D.R., Barnaby, H.J., Puchner, H., Talin, A.A., Marinella, M., & Marinella, M. (2022). Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays [Conference Presenation]. IEEE Transactions on Nuclear Science. 10.2172/1877504

Sharov, F.V., Moxim, S.J., Haase, G.S., Hughart, D.R., Lenahan, P.M., & Lenahan, P.M. (2022). A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance. IEEE Transactions on Nuclear Science, 69(3). 10.1109/tns.2022.3150979

Moxim, S.J., Sharov, F.V., Hughart, D.R., Haase, G.S., McKay, C.G., Lenahan, P.M., & Lenahan, P.M. (2022). Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2transistors. Applied Physics Letters, 120(6). 10.1063/5.0077946

Wilson, D.E., Spear, M., Wallace, T., Irumva, G., Neuendank, J., Sanchez, I., Barnaby, H., Privat, A., Turowski, M., Mikkola, E., Hughart, D.R., Manuel, J., Vizkelethy, G., King, M.P., Marinella, M., & Marinella, M. (2022). Total ionizing dose and single event effects on 12-nm bulk FinFETs [Conference Presenation]. 10.2172/2001871

Sharov, F.V., Moxim, S.J., Hughart, D.R., Haase, G.S., Lenahan, P.M., & Lenahan, P.M. (2021). Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System [Conference Poster]. https://doi.org/10.2172/1903089

Sharov, F.V., Moxim, S.J., Hughart, D.R., Haase, G.S., Lenahan, P.M., & Lenahan, P.M. (2021). Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System [Conference Presenation]. https://www.osti.gov/biblio/2001538

Ellis, S.R., Bartelt, N.C., Leonard, F., Celio, K.C., Fuller, E.J., Hughart, D.R., Garland, D., Marinella, M., Michael, J.R., Chandler, D., Liao, B., Talin, A.A., & Talin, A.A. (2021). Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried p-Si/Si O2 interface. Physical Review B, 104(16). 10.1103/physrevb.104.l161303

Sharov, F.V., Moxim, S.J., Hughart, D.R., Haase, G.S., McKay, C.G., Lenahan, P.M., & Lenahan, P.M. (2021). Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR [Conference Presenation]. https://doi.org/10.2172/1891063

Sharov, F.V., Moxim, S.J., Hughart, D.R., Haase, G.S., McKay, C.G., Lenahan, P.M., & Lenahan, P.M. (2021). Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR [Conference Proceeding]. https://www.osti.gov/biblio/1899505

Moxim, S.J., Sharov, F.V., Hughart, D.R., Haase, G.S., Lenahan, P.M., & Lenahan, P.M. (2021). Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors [Conference Presenation]. 10.2172/1891743

Talin, A.A., Ellis, S., Bartelt, N.C., Leonard, F., Perez, C., Celio, K., Fuller, E.J., Hughart, D.R., Garland, D., Marinella, M., Michael, J.R., Chandler, D., Young, S.M., Smith, S., Kumar, S., & Kumar, S. (2021). Thermal Infrared Detectors: expanding performance limits using ultrafast electron microscopy. 10.2172/1821971

Sharov, F.V., Moxim, S.J., Lenahan, P.M., Haase, G.S., Hughart, D.R., & Hughart, D.R. (2021). Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs [Conference Presenation]. 10.2172/1875033

Bennett, C., Robinson, D.A., Xiao, T.P., Melianas, A., Hughart, D.R., Agarwal, S., Fuller, E.J., Li, Y., Salleo, A., Allendorf, M., Talin, A.A., Marinella, M., & Marinella, M. (2021). Effects of Total Ionizing Dose on PEDOT/PSS Organic Memory Devices (Poster) [Conference Poster]. 10.2172/1888965

Xiao, T.P., Bennett, C., Mancoff, F.B., Manuel, J., Hughart, D.R., Jacobs-Gedrim, R.B., Bielejec, E.S., Vizkelethy, G., Sun, J., Aggarwal, S., Arghavani, R., Marinella, M., & Marinella, M. (2021). Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions with Perpendicular Anisotropy. IEEE Transactions on Nuclear Science, 68(5), pp. 581-587. 10.1109/tns.2021.3057348

Xiao, T.P., Bennett, C., Agarwal, S., Hughart, D.R., Barnaby, H.J., Puchner, H., Prabhakar, V., Talin, A.A., Marinella, M., & Marinella, M. (2021). Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators. IEEE Transactions on Nuclear Science, 68(5), pp. 762-769. 10.1109/tns.2021.3058548

Xiao, T.P., Bennett, C., Agarwal, S., Hughart, D.R., Barnaby, H., Puchner, H., Prabhakar, V., Marinella, M., & Marinella, M. (2020). Ionizing radiation effects in SONOS-based neuromorphic inference accelerators [Conference Poster]. 10.2172/1831578

Xiao, T.P., Bennett, C., Mancoff, F., Manuel, J., Hughart, D.R., Jacobs-Gedrim, R.B., Bielejec, E.S., Vizkelethy, G., Sun, J., Aggarwal, S., Arghavani, R., Marinella, M., & Marinella, M. (2020). Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy [Conference Presenation]. 10.2172/1831024

Moxim, S.J., Lenahan, P.M., Sharov, F.V., Haase, G.S., Hughart, D.R., & Hughart, D.R. (2020). Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2Interface Defects [Conference Presenation]. IEEE International Integrated Reliability Workshop Final Report. 10.2172/1824929