A series of Ti-rich Ni-Ti-Pt ternary alloys with 13 to 18 at. pct Pt were processed by vacuum arc melting and characterized for their transformation behavior to identify shape memory alloys (SMA) that undergo transformation between 448 K and 498 K (175 °C and 225 °C) and achieve recoverable strain exceeding 2 pct. From this broader set of compositions, three alloys containing 15.5 to 16.5 at. pct Pt exhibited transformation temperatures in the vicinity of 473 K (200 °C), thus were targeted for more detailed characterization. Preliminary microstructural evaluation of these three compositions revealed a martensitic microstructure with small amounts of Ti2(Ni,Pt) particles. Room temperature mechanical testing gave a response characteristic of martensitic de-twinning followed by a typical work-hardening behavior to failure. Elevated mechanical testing, performed while the materials were in the austenitic state, revealed yield stresses of approximately 500 MPa and 3.5 pct elongation to failure. Thermal strain recovery characteristics were more carefully investigated with unbiased incremental strain-temperature tests across the 1 to 5 pct strain range, as well as cyclic strain-temperature tests at 3 pct strain. The unbiased shape recovery results indicated a complicated strain recovery path, dependent on prestrain level, but overall acceptable SMA behavior within the targeted temperature and recoverable strain range.
2015 International 3D Systems Integration Conference, 3DIC 2015
Wyers, Eric J.; Harris, T.R.; Pitts, W.S.; Massad, Jordan M.; Franzon, Paul D.
The stress impact of the CMOS and III-V heterogeneous integration environment on device electrical performance is being characterized. Measurements from a partial heterogeneous integration fabrication run will be presented to provide insight into how the backside source vias, alternatively referred to as through-silicon-carbide vias (TSCVs), used within the heterogeneous integration environment impacts GaN HEMT device-level DC performance.
Contrary to popular opinion, fully resolved speckles may not be the best option for interferometric applications where it is often advantageous to have unresolved speckles with up to hundreds of speckles in a single camera pixel. This paper seeks to elucidate the effect of unresolved speckles on electronic speckle pattern interferometry (ESPI) and laser Doppler velocimetry (LDV). Related techniques such as temporal speckle pattern interferometry (TSPI) and ultrasonic imaging can also benefit from the ideas presented in this paper. Speckle statistics will be briefly outlined as background to the main topic of optimizing speckle fields for use in interferometry. The complementary speckle-size analysis for LDV is compared to previous published results on ESPI.
The widefield laser Doppler velocimeter is a new measurement technique that significantly expands the functionality of a traditional scanning system. This new technique allows full-field velocity measurements without scanning, a drawback of traditional measurement techniques. This is particularly important for tests in which the sample is destroyed or the motion of the sample is non-repetitive. The goal of creating ''velocity movies'' was accomplished during the research, and this report describes the current functionality and operation of the system. The mathematical underpinnings and system setup are thoroughly described. Two prototype experiments are then presented to show the practical use of the current system. Details of the corresponding hardware used to collect the data and the associated software to analyze the data are presented.
The shape control of thin, flexible structures has been studied primarily for edge-supported thin plates. For applications involving reconfigurable apertures such as membrane optics and active RF surfaces, corner-supported configurations may prove more applicable. Corner-supported adaptive structures allow for parabolic geometries, greater flexibility, and larger achievable deflections when compared to edge-supported geometries under similar actuation conditions. Preliminary models have been developed for corner-supported thin plates actuated by isotropic piezoelectric actuators. However, typical piezoelectric materials are known to be orthotropic. This paper extends a previously-developed isotropic model for a corner-supported, thin, rectangular bimorph to a more general orthotropic model for a bimorph actuated by a two-dimensional array of segmented PVDF laminates. First, a model determining the deflected shape of an orthotropic laminate for a given distribution of voltages over the actuator array is derived. Second, symmetric actuation of a bimorph consisting of orthotropic material is simulated using orthogonally-oriented laminae. Finally, the results of the model are shown to agree well with layered-shell finite element simulations for simple and complex voltage distributions.
This report summarizes research into effects of electron gun control on piezoelectric polyvinylidene fluoride (PVDF) structures. The experimental apparatus specific to the electron gun control of this structure is detailed, and the equipment developed for the remote examination of the bimorph surface profile is outlined. Experiments conducted to determine the optimum electron beam characteristics for control are summarized. Clearer boundaries on the bimorphs control output capabilities were determined, as was the closed loop response. Further controllability analysis of the bimorph is outlined, and the results are examined. In this research, the bimorph response was tested through a matrix of control inputs of varying current, frequency, and amplitude. Experiments also studied the response to electron gun actuation of piezoelectric bimorph thin film covered with multiple spatial regions of control. Parameter ranges that yielded predictable control under certain circumstances were determined. Research has shown that electron gun control can be used to make macrocontrol and nanocontrol adjustments for PVDF structures. The control response and hysteresis are more linear for a small range of energy levels. Current levels needed for optimum control are established, and the generalized controllability of a PVDF bimorph structure is shown.