Coupling MOS Quantum Dot and Phosphorous Donor Qubit Systems
Abstract not provided.
Publications
High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism
Physical Review. X
Abstract not provided.
Two-axis control of a coupled quantum dot - donor qubit in Si-MOS
Abstract not provided.
Magnetic field and angular dependent singlet-triplet rotations in a donor-quantum dot qubit
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
Tunnel coupling tuning of a QD-donor S-T qubit
Abstract not provided.
Coupling MOS quantum dot and phosphorous donor qubit systems
Technical Digest - International Electron Devices Meeting, IEDM
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Coupling MOS quantum dot and phosphorous donor qubit systems
IEEE International Electron Devices Meeting
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer
Applied Physics Letters
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.
Fabrication of Quantum Dots in Undoped SiGe with a single metal layer
Abstract not provided.
Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit
Nature Physics
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
STM fabrication of double quantum dot charge qubits for adiabatic quantum computing
Abstract not provided.
22 Results