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Comprehensive assessment of oxide memristors as post-CMOS memory and logic devices

ECS Transactions

Gao, Xujiao G.; Mamaluy, Denis M.; Cyr, E.C.; Marinella, M.J.

As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. To facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. The model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device is determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.

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TYPE Journal Article YEAR 2016
ScopusOSTIDOI

FAIR DEAL Grand Challenge Overview

Allemang, Christopher R.; Anderson, Evan M.; Baczewski, Andrew D.; Bussmann, Ezra B.; Butera, Robert E.; Campbell, DeAnna M.; Campbell, Quinn C.; Carr, Stephen M.; Frederick, Esther F.; Gamache, Phillip G.; Gao, Xujiao G.; Grine, Albert D.; Gunter, Mathew M.; Halsey, Connor H.; Ivie, Jeffrey A.; Katzenmeyer, Aaron M.; Leenheer, Andrew J.; Lepkowski, William L.; Lu, Tzu-Ming L.; Mamaluy, Denis M.; Mendez Granado, Juan P.; Pena, Luis F.; Schmucker, Scott W.; Scrymgeour, David S.; Tracy, Lisa A.; Wang, George T.; Ward, Dan W.; Young, Steve M.

While it is likely practically a bad idea to shrink a transistor to the size of an atom, there is no arguing that it would be fantastic to have atomic-scale control over every aspect of a transistor – a kind of crystal ball to understand and evaluate new ideas. This project showed that it was possible to take a niche technique used to place dopants in silicon with atomic precision and apply it broadly to study opportunities and limitations in microelectronics. In addition, it laid the foundation to attaining atomic-scale control in semiconductor manufacturing more broadly.

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TYPE SAND Report YEAR 2021
OSTIDOI

Fully-Coupled Thermo-Electrical Modeling and Simulation of Transition Metal Oxide Memristors

Mamaluy, Denis M.; Gao, Xujiao G.; Tierney, Brian D.

Transition metal oxide (TMO) memristors have recently attracted special attention from the semiconductor industry and academia. Memristors are one of the strongest candidates to replace flash memory, and possibly DRAM and SRAM in the near future. Moreover, memristors have a high potential to enable beyond-CMOS technology advances in novel architectures for high performance computing (HPC). The utility of memristors has been demonstrated in reprogrammable logic (cross-bar switches), brain-inspired computing and in non-CMOS complementary logic. Indeed, the potential use of memristors as logic devices is especially important considering the inevitable end of CMOS technology scaling that is anticipated by 2025. In order to aid the on-going Sandia memristor fabrication effort with a memristor design tool and establish a clear physical picture of resistance switching in TMO memristors, we have created and validated with experimental data a simulation tool we name the Memristor Charge Transport (MCT) Simulator.

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TYPE SAND Report YEAR 2016
OSTIDOI
Results 1–25 of 68
Results 1–25 of 68