Publications

Rudolph, Martin R.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm; Sharma, Peter A.

Abstract not provided.

Physical Review. X

Carroll, Malcolm; Harvey-Collard, Patrick H.; D'Anjou, Benjamin D.; Rudolph, Martin R.; Jacobson, Noah T.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Coish, William C.; Pioro-Ladriere, Michel P.

Abstract not provided.

Rudolph, Martin R.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm; Rochette, Sophie R.; Rudolph, Martin R.; Roy, A-M.R.; Curry, Matthew J.; Ten Eyck, Gregory A.; Dominguez, Jason J.; Manginell, Ronald P.; Pluym, Tammy P.; Gamble, John K.; Lilly, Michael L.; Oxton-Bureau, Chloe O.; Pioro-Ladriere, Michel P.

Abstract not provided.

Technical Digest - International Electron Devices Meeting, IEDM

Rudolph, Martin R.; Harvey-Collard, P.; Jock, R.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, M.P.; Carroll, Malcolm

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

IEEE International Electron Devices Meeting

Rudolph, Martin R.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm; Harvey-Collard, Patrick H.

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

Carroll, Malcolm; Rochette, Sophie R.; Rudolph, Martin R.; Roy, Anne-Marie R.; Curry, Matthew J.; Ten Eyck, Gregory A.; Dominguez, Jason J.; Manginell, Ronald P.; Pluym, Tammy P.; Gamble, John K.; Lilly, Michael L.; Bureau-Oxton, Chloe B.; Pioro-Ladriere, Michel P.

Abstract not provided.

Carroll, Malcolm; Rochette, Sophie R.; Rudolph, Martin R.; Roy, Anne-Marie R.; Curry, Matthew J.; Ten Eyck, Gregory A.; Dominguez, Jason J.; Manginell, Ronald P.; Pluym, Tammy P.; Gamble, John K.; Lilly, Michael L.; Bureau-Oxton, Chloe B.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Applied Physics Letters

Lu, Tzu-Ming L.; Gamble, John K.; Muller, Richard P.; Nielsen, Erik N.; Bethke, D.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Dominguez, Jason J.; Lilly, M.P.; Carroll, Malcolm; Wanke, M.C.

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

Luhman, Dwight R.; Lu, Tzu-Ming L.; Gamble, John K.; Muller, Richard P.; Nielsen, Erik N.; Bethke, Donald T.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Dominguez, Jason J.; Lilly, Michael L.; Carroll, Malcolm; Wanke, Michael W.

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathaniel B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathaniel B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Luhman, Dwight R.; Tracy, Lisa A.; Witzel, Wayne W.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Luhman, Dwight R.; Tracy, Lisa A.; Witzel, Wayne W.; Carr, Stephen M.; Borchardt, John J.; Biship, Nathan B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Rudolph, Martin R.; Harvey-Collard, Patrick H.; Nielsen, Erik N.; Gamble, John K.; Muller, Richard P.; Jacobson, Noah T.; Ten Eyck, Gregory A.; Wendt, J.R.; Pluym, Tammy P.; Pioro-Ladiere, Michele P.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Muller, Richard P.; Tracy, Lisa A.; Nguyen, Khoi T.; Ten Eyck, Gregory A.; Lilly, Michael L.; Carroll, Malcolm; Nielsen, Erik N.; Gao, Xujiao G.; Young, Ralph W.; Salinger, Andrew G.; Kalashnikova, Irina; Bishop, Nathaniel B.; Carr, Stephen M.; Lu, Tzu-Ming L.

Abstract not provided.

Muller, Richard P.; Lu, Tzu-Ming L.; Tracy, Lisa A.; Ten Eyck, Gregory A.; Lilly, Michael L.; Carroll, Malcolm; Nielsen, Erik N.; Gao, Xujiao G.; Young, Ralph W.; Salinger, Andrew G.; Kalashnikova, Irina; Rahman, Rajib R.; Bishop, Nathaniel B.; Carr, Stephen M.

Abstract not provided.

Carroll, Malcolm; Ten Eyck, Gregory A.; Carr, Stephen M.; Witzel, Wayne W.; Dominguez, Jason J.; Rahman, Rajib R.; Nielsen, Erik N.; Lu, Tzu-Ming L.; Lilly, Michael L.; Jacobson, Noah T.

Abstract not provided.

Bishop, Nathaniel B.; Stevens, Jeffrey S.; Childs, Kenton D.; Ohlhausen, J.A.; Lilly, Michael L.; Carroll, Malcolm; Young, Ralph W.; Bielejec, Edward S.; Ten Eyck, Gregory A.; Wendt, J.R.; Rahman, Rajib R.; Grubbs, Robert K.

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.