The U.S. Army Research Office (ARO), in partnership with IARPA, are investigating innovative, efficient, and scalable computer architectures that are capable of executing next-generation large scale data-analytic applications. These applications are increasingly sparse, unstructured, non-local, and heterogeneous. Under the Advanced Graphic Intelligence Logical computing Environment (AGILE) program, Performer teams will be asked to design computer architectures to meet the future needs of the DoD and the Intelligence Community (IC). This design effort will require flexible, scalable, and detailed simulation to assess the performance, efficiency, and validity of their designs. To support AGILE, Sandia National Labs will be providing the AGILE-enhanced Structural Simulation Toolkit (A-SST). This toolkit is a computer architecture simulation framework designed to support fast, parallel, and multi-scale simulation of novel architectures. This document describes the A-SST framework, some of its library of simulation models, and how it may be used by AGILE Performers.
Sandia National Laboratories is investigating scalable architectural simulation capabilities with a focus on simulating and evaluating highly scalable supercomputers for high performance computing applications. There is a growing demand for RTL model integration to provide the capability to simulate customized node architectures and heterogeneous systems. This report describes the first steps integrating the ESSENTial Signal Simulation Enabled by Netlist Transforms (ESSENT) tool with the Structural Simulation Toolkit (SST). ESSENT can emit C++ models from models written in FIRRTL to automatically generate components. The integration workflow will automatically generate the SST component and necessary interfaces to ’plug’ the ESSENT model into the SST framework.
Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor's scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system scope, we present a multiscale simulation framework. Charge collection at the 1) device level determines 2) circuit-level transient duration and state-upset likelihood. Circuit effects, in turn, impact 3) register-transfer-level architecture-state corruption visible at 4) the system level. Thus, the physically accurate effects of SEEs in large-scale systems, executed on a high-performance computing (HPC) simulator, could be used to drive cross-layer radiation hardening by design. We demonstrate the capabilities of this model with two case studies. First, we determine a D flip-flop's sensitivity at the transistor level on 14-nm FinFet technology, validating the model against published cross sections. Second, we track and estimate faults in a microprocessor without interlocked pipelined stages (MIPS) processor for Adams 90% worst case environment in an isotropic space environment.
Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).
DRAM scalability is becoming more challenging, pushing the focus of the research community towards alternative memory technologies. Many emerging non-volatile memory (NVM) devices are proving themselves to be good candidates to replace DRAM in the coming years. For example, the recently announced 3D-XPoint memory by Intel/Micron promises latencies that are comparable to DRAM, while being non-volatile and much more dense. While emerging NVMs can be fabricated in different form factors, the most promising (from a performance perspective) are NVM-based DIMMs. Unfortunately, there is a shortage of studies that explore the design options for NVM-based DIMMs. Because of the read and write asymmetries in both power consumption and latency, as well as limited write endurance, which often requires wear-leveling techniques, NVMs require a specialized controller. The fact that future on-die memory controllers are expected to handle different memory technologies pushes future hardware towards on-DIMM controllers. In this paper, we propose an architectural model for NVM-based DIMMs with internal controllers, explore their design space, evaluate different optimizations and reach out to several architectural suggestions. Finally, we make our model publicly available and integrate it with a widely used architectural simulator.