We theoretically studied the feasibility of building a long-term read-write quantum memory using the principle of parity-time (PT) symmetry, which has already been demonstrated for classical systems. The design consisted of a two-resonator system. Although both resonators would feature intrinsic loss, the goal was to apply a driving signal to one of the resonators such that it would become an amplifying subsystem, with a gain rate equal and opposite to the loss rate of the lossy resonator. Consequently, the loss and gain probabilities in the overall system would cancel out, yielding a closed quantum system. Upon performing detailed calculations on the impact of a driving signal on a lossy resonator, our results demonstrated that an amplifying resonator is physically unfeasible, thus forestalling the possibility of PT-symmetric quantum storage. Our finding serves to significantly narrow down future research into designing a viable quantum hard drive.
This project aimed to identify the performance-limiting mechanisms in mid- to far infrared (IR) sensors by probing photogenerated free carrier dynamics in model detector materials using scanning ultrafast electron microscopy (SUEM). SUEM is a recently developed method based on using ultrafast electron pulses in combination with optical excitations in a pump- probe configuration to examine charge dynamics with high spatial and temporal resolution and without the need for microfabrication. Five material systems were examined using SUEM in this project: polycrystalline lead zirconium titanate (a pyroelectric), polycrystalline vanadium dioxide (a bolometric material), GaAs (near IR), InAs (mid IR), and Si/SiO 2 system as a prototypical system for interface charge dynamics. The report provides detailed results for the Si/SiO 2 and the lead zirconium titanate systems.
While it is likely practically a bad idea to shrink a transistor to the size of an atom, there is no arguing that it would be fantastic to have atomic-scale control over every aspect of a transistor – a kind of crystal ball to understand and evaluate new ideas. This project showed that it was possible to take a niche technique used to place dopants in silicon with atomic precision and apply it broadly to study opportunities and limitations in microelectronics. In addition, it laid the foundation to attaining atomic-scale control in semiconductor manufacturing more broadly.
Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.
A number of applications in basic science and technology would benefit from high-fidelity photon-number-resolving photodetectors. While some recent experimental progress has been made in this direction, the requirements for true photon number resolution are stringent, and no design currently exists that achieves this goal. Here we employ techniques from fundamental quantum optics to demonstrate that detectors composed of subwavelength elements interacting collectively with the photon field can achieve high-performance photon number resolution. We propose a new design that simultaneously achieves photon number resolution, high efficiency, low jitter, low dark counts, and high count rate. We discuss specific systems that satisfy the design requirements, pointing to the important role of nanoscale device elements.
Photodetection plays a key role in basic science and technology, with exquisite performance having been achieved down to the single-photon level. Further improvements in photodetectors would open new possibilities across a broad range of scientific disciplines and enable new types of applications. However, it is still unclear what is possible in terms of ultimate performance and what properties are needed for a photodetector to achieve such performance. Here, we present a general modeling framework for photodetectors whereby the photon field, the absorption process, and the amplification process are all treated as one coupled quantum system. The formalism naturally handles field states with single or multiple photons as well as a variety of detector configurations and includes a mathematical definition of ideal photodetector performance. In conclusion, the framework reveals how specific photodetector architectures introduce limitations and tradeoffs for various performance metrics, providing guidance for optimization and design.
Single-photon detectors have achieved impressive performance and have led to a number of new scientific discoveries and technological applications. Existing models of photodetectors are semiclassical in that the field-matter interaction is treated perturbatively and time-separated from physical processes in the absorbing matter. An open question is whether a fully quantum detector, whereby the optical field, the optical absorption, and the amplification are considered as one quantum system, could have improved performance. Here we develop a theoretical model of such photodetectors and employ simulations to reveal the critical role played by quantum coherence and amplification backaction in dictating the performance. We show that coherence and backaction lead to trade-offs between detector metrics and also determine optimal system designs through control of the quantum-classical interface. Importantly, we establish the design parameters that result in a ideal photodetector with 100% efficiency, no dark counts, and minimal jitter, thus paving the route for next-generation detectors.