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Simulation and modeling of the electronic structure of GaAs damage clusters

Journal of Applied Physics

Moussa, J.E.; Foiles, Stephen M.; Schultz, Peter A.

In an effort to build a stronger microscopic foundation for radiation damage models in gallium arsenide (GaAs), the electronic properties of radiation-induced damage clusters are studied with atomistic simulations. Molecular dynamics simulations are used to access the time and length scales required for direct simulation of a collision cascade, and density functional theory simulations are used to calculate the electronic properties of isolated damaged clusters that are extracted from these cascades. To study the physical properties of clusters, we analyze the statistics of a randomly generated ensemble of damage clusters because no single cluster adequately represents this class of defects. The electronic properties of damage clusters are accurately described by a classical model of the electrical charging of a semiconducting sphere embedded in a uniform dielectric. The effective band gap of the cluster depends on the degree of internal structural damage, and the gap closes to form a metal in the high-damage limit. We estimate the Fermi level of this metallic state, which corresponds to high-energy amorphous GaAs, to be 0.46 ± 0.07 eV above the valence band edge of crystalline GaAs. © 2013 American Institute of Physics.

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TYPE Journal Article YEAR 2013
OSTIScopus

Data co-processing for extreme scale analysis level II ASC milestone (4745)

Rogers, David; Moreland, Kenneth D.; Oldfield, Ron; Fabian, Nathan

Exascale supercomputing will embody many revolutionary changes in the hardware and software of high-performance computing. A particularly pressing issue is gaining insight into the science behind the exascale computations. Power and I/O speed con- straints will fundamentally change current visualization and analysis work ows. A traditional post-processing work ow involves storing simulation results to disk and later retrieving them for visualization and data analysis. However, at exascale, scien- tists and analysts will need a range of options for moving data to persistent storage, as the current o ine or post-processing pipelines will not be able to capture the data necessary for data analysis of these extreme scale simulations. This Milestone explores two alternate work ows, characterized as in situ and in transit, and compares them. We nd each to have its own merits and faults, and we provide information to help pick the best option for a particular use.

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TYPE SAND Report YEAR 2013
DOIOSTI
Results 6726–6750 of 9,998
Results 6726–6750 of 9,998