Publications

Bureau-Oxton, Chloe B.; Harvy-Collard, Patrick H.; Jacobson, Noah T.; Jock, Ryan M.; Srinivasa, Vanita S.; Mounce, Andrew M.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Luhman, Dwight R.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Technical Digest - International Electron Devices Meeting, IEDM

Harvey-Collard, Patrick; Jock, Ryan M.; Jacobson, Noah T.; Baczewski, Andrew D.; Mounce, Andrew M.; Curry, Matthew J.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladrière, Michel; Carroll, Malcolm

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

Bureau-Oxton, Chloe B.; Rudinger, Kenneth M.; Jacobson, Noah T.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladriere, Michel P.; Luhman, Dwight R.; Carroll, Malcolm

Abstract not provided.

Nguyen, Khoi T.; Young, Ralph W.; Nielsen, Erik N.; Rahman, Rajib R.; Muller, Richard P.; Carroll, Malcolm; Lilly, Michael L.; Bishop, Nathaniel B.; Tracy, Lisa A.; Wendt, J.R.; Grubbs, Robert K.; Pluym, Tammy P.; Stevens, Jeffrey S.; Dominguez, Jason J.

Abstract not provided.

Bishop, Nathaniel B.; Carr, Stephen M.; Lu, Tzu-Ming L.; Lilly, Michael L.; Carroll, Malcolm; Young, Ralph W.; Nielsen, Erik N.; Muller, Richard P.; Rahman, Rajib R.; Tracy, Lisa A.; Wendt, J.R.

Abstract not provided.

Technical Digest - International Electron Devices Meeting, IEDM

Rudolph, Martin R.; Harvey-Collard, P.; Jock, R.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, M.P.; Carroll, Malcolm

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

Rudolph, Martin R.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm; Sharma, Peter A.

Abstract not provided.

IEEE International Electron Devices Meeting

Rudolph, Martin R.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm; Harvey-Collard, Patrick H.

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

Luhman, Dwight R.; Tracy, Lisa A.; Witzel, Wayne W.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Luhman, Dwight R.; Tracy, Lisa A.; Witzel, Wayne W.; Carr, Stephen M.; Borchardt, John J.; Biship, Nathan B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathaniel B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Applied Physics Letters

Lu, Tzu-Ming L.; Gamble, John K.; Muller, Richard P.; Nielsen, Erik N.; Bethke, D.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Dominguez, Jason J.; Lilly, M.P.; Carroll, Malcolm; Wanke, M.C.

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

Luhman, Dwight R.; Lu, Tzu-Ming L.; Gamble, John K.; Muller, Richard P.; Nielsen, Erik N.; Bethke, Donald T.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Dominguez, Jason J.; Lilly, Michael L.; Carroll, Malcolm; Wanke, Michael W.

Abstract not provided.

Mounce, Andrew M.; Monical, Cara P.; Lewis, Phillip J.; Jacobson, Noah T.; Jock, Ryan M.; Wendt, J.R.; Pluym, Tammy P.; Ward, Daniel R.; Larson, K.W.; Lilly, Michael L.; Luhman, Dwight R.

Abstract not provided.

Rudolph, Martin R.; Harvey-Collard, Patrick H.; Nielsen, Erik N.; Gamble, John K.; Muller, Richard P.; Jacobson, Noah T.; Ten Eyck, Gregory A.; Wendt, J.R.; Pluym, Tammy P.; Pioro-Ladiere, Michele P.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Simmons, J.A.; Fischer, Arthur J.; Crawford, Mary H.; Abrams, B.L.; Biefeld, Robert M.; Koleske, Daniel K.; Allerman, A.A.; Figiel, J.J.; Creighton, J.R.; Coltrin, Michael E.; Tsao, Jeffrey Y.; Mitchell, Christine C.; Kerley, Thomas M.; Wang, George T.; Bogart, Katherine B.; Seager, Carleton H.; Campbell, Jonathan C.; Follstaedt, D.M.; Norman, Adam K.; Kurtz, S.R.; Wright, Alan F.; Myers, S.M.; Missert, Nancy A.; Copeland, Robert G.; Provencio, P.N.; Wilcoxon, Jess P.; Hadley, G.R.; Wendt, J.R.; Kaplar, Robert K.; Shul, Randy J.; Rohwer, Lauren E.; Tallant, David T.; Simpson, Regina L.; Moffat, Harry K.; Salinger, Andrew G.; Pawlowski, Roger P.; Emerson, John A.; Thoma, Steven T.; Cole, Phillip J.; Boyack, Kevin W.; Garcia, Marie L.; Allen, Mark S.; Burdick, Brent B.; Rahal, Nabeel R.; Monson, Mary A.; Chow, Weng W.; Waldrip, Karen E.

This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.

Bureau-Oxtron, Chloe B.; Luhman, Dwight R.; Jacobson, Noah T.; Ward, Daniel R.; Anderson, John M.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Physical Review. X

Carroll, Malcolm; Harvey-Collard, Patrick H.; D'Anjou, Benjamin D.; Rudolph, Martin R.; Jacobson, Noah T.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Coish, William C.; Pioro-Ladriere, Michel P.

Abstract not provided.

Mounce, Andrew M.; Lewis, Phillip J.; Monical, Cara P.; Jacobson, Noah T.; Rudolph, Martin R.; Anderson, John M.; Wendt, J.R.; Pluym, Tammy P.; Ward, Daniel R.; Larson, K.W.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm; Harvey-Collard, Patrick H.; Jacobson, Noah T.; Jock, Ryan M.; Mounce, Andrew M.; Srinivasa, Vanita S.; Ward, Daniel R.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Gamble, John K.; Witzel, Wayne W.

Abstract not provided.

Carroll, Malcolm; Harvey-Collard, Patrick H.; Jock, Ryan M.; Jacobson, Noah T.; Baczewski, Andrew D.; Mounce, Andrew M.; Curry, Matthew J.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladriere, Michel P.

Abstract not provided.

Harvey-Collard, Patrick H.; Jacobson, Noah T.; Bureau-Oxton, Chloe B.; Jock, Ryan M.; Srinivasa, Vanita S.; Mounce, Andrew M.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Luhman, Dwight R.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Mounce, Andrew M.; Rudolph, Martin R.; Jacobson, Noah T.; Harvey-Collard, Patrick H.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Carroll, Malcolm

Abstract not provided.