Combined Environment Radiation Effects (Ionizing Dose and Displacement Damage)

Our previous research has look at radiation damage to semiconductors caused by both ionization and by displacement. Since some devices can be sensitive to both damage processes, we are actively looking at combined radiation effects and establishing models to quantify any synergistic effects. We have developed a set of definitions to help characterize and quantify the combined effects and we are gathering damage data in lateral bipolar transistors, optocouplers, and operational amplifiers.

Contact: Michael Gregson