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Fast Hybrid Silicon Double-Quantum-Dot Qubit

Physical Review Letters

Shi, Zhan; Simmons, C.B.; Prance, J.R.; Foulk, James W.; Koh, Teck S.; Shim, Yun-Pil; Hu, Xuedong; Savage, D.E.; Lagally, M.G.; Eriksson, M.A.; Friesen, Mark; Coppersmith, S.N.

We introduce a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers S2 = 3/4 (S = 1/2) and Sz = - 1/2, with the two different states being singlet and triplet in the doubly occupied dot. Gate operations can be implemented electrically and the qubit is highly tunable, enabling fast implementation of one- and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantum dot qubit architectures with fast operations. Additionally, the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.

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TYPE Journal Article YEAR 2012
DOIOSTI

Rapid analysis of scattering from periodic dielectric structures using accelerated Cartesian expansions

Journal of the Optical Society of America. A, Optics, Image Science, and Vision

Baczewski, Andrew D.; Miller, Nicholas C.; Shanker, Balasubramaniam

Here, the analysis of fields in periodic dielectric structures arise in numerous applications of recent interest, ranging from photonic bandgap structures and plasmonically active nanostructures to metamaterials. To achieve an accurate representation of the fields in these structures using numerical methods, dense spatial discretization is required. This, in turn, affects the cost of analysis, particularly for integral-equation-based methods, for which traditional iterative methods require Ο(Ν2) operations, Ν being the number of spatial degrees of freedom. In this paper, we introduce a method for the rapid solution of volumetric electric field integral equations used in the analysis of doubly periodic dielectric structures. The crux of our method is the accelerated Cartesian expansion algorithm, which is used to evaluate the requisite potentials in Ο(Ν) cost. Results are provided that corroborate our claims of acceleration without compromising accuracy, as well as the application of our method to a number of compelling photonics applications.

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TYPE Journal Article YEAR 2012
DOIOSTI

Demonstration of a Legacy Application's Path to Exascale - ASC L2 Milestone 4467

Barrett, Brian; Kelly, Suzanne M.; Klundt, Ruth A.; Laros, James H.; Leung, Vitus J.; Levenhagen, Michael; Lofstead, Gerald F.; Moreland, Kenneth D.; Oldfield, Ron; Pedretti, Kevin P.; Rodrigues, Arun; Barrett, Richard F.; Ward, Harry L.; Vandyke, John P.; Vaughan, Courtenay T.; Wheeler, Kyle B.; Brandt, James M.; Brightwell, Ronald B.; Curry, Matthew L.; Fabian, Nathan; Ferreira, Kurt; Gentile, Ann C.; Hemmert, Karl S.

Abstract not provided.

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TYPE Presentation YEAR 2012
OSTI
Results 7301–7325 of 9,998
Results 7301–7325 of 9,998