Charon parallel semiconductor device simulator
Abstract not provided.
Publications
Uncertainty Quantification for the Simple Prototype Analysis
Abstract not provided.
Simulation of neutron radiation damage in silicon semiconductor devices
A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.
Multifidelity modeling approaches in simulation simulation--based optimization based optimization
Abstract not provided.
4 Results