Publications

Results 26–42 of 42
Skip to search filters

Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact

Bishop, Nathaniel B.; Stevens, Jeffrey S.; Childs, Kenton D.; Ohlhausen, J.A.; Lilly, Michael L.; Carroll, Malcolm; Young, Ralph W.; Bielejec, Edward S.; Ten Eyck, Gregory A.; Wendt, J.R.; Rahman, Rajib R.; Grubbs, Robert K.

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

More Details
TYPE Conference YEAR 2010
OSTI

Final report on grand challenge LDRD project : a revolution in lighting : building the science and technology base for ultra-efficient solid-state lighting

Simmons, J.A.; Fischer, Arthur J.; Crawford, Mary H.; Abrams, B.L.; Biefeld, Robert M.; Koleske, Daniel K.; Allerman, A.A.; Figiel, J.J.; Creighton, J.R.; Coltrin, Michael E.; Tsao, Jeffrey Y.; Mitchell, Christine C.; Kerley, Thomas M.; Wang, George T.; Bogart, Katherine B.; Seager, Carleton H.; Campbell, Jonathan C.; Follstaedt, D.M.; Norman, Adam K.; Kurtz, S.R.; Wright, Alan F.; Myers, S.M.; Missert, Nancy A.; Copeland, Robert G.; Provencio, P.N.; Wilcoxon, Jess P.; Hadley, G.R.; Wendt, J.R.; Kaplar, Robert K.; Shul, Randy J.; Rohwer, Lauren E.; Tallant, David T.; Simpson, Regina L.; Moffat, Harry K.; Salinger, Andrew G.; Pawlowski, Roger P.; Emerson, John A.; Thoma, Steven T.; Cole, Phillip J.; Boyack, Kevin W.; Garcia, Marie L.; Allen, Mark S.; Burdick, Brent B.; Rahal, Nabeel R.; Monson, Mary A.; Chow, Weng W.; Waldrip, Karen E.

This SAND report is the final report on Sandia's Grand Challenge LDRD Project 27328, 'A Revolution in Lighting -- Building the Science and Technology Base for Ultra-Efficient Solid-state Lighting.' This project, which for brevity we refer to as the SSL GCLDRD, is considered one of Sandia's most successful GCLDRDs. As a result, this report reviews not only technical highlights, but also the genesis of the idea for Solid-state Lighting (SSL), the initiation of the SSL GCLDRD, and the goals, scope, success metrics, and evolution of the SSL GCLDRD over the course of its life. One way in which the SSL GCLDRD was different from other GCLDRDs was that it coincided with a larger effort by the SSL community - primarily industrial companies investing in SSL, but also universities, trade organizations, and other Department of Energy (DOE) national laboratories - to support a national initiative in SSL R&D. Sandia was a major player in publicizing the tremendous energy savings potential of SSL, and in helping to develop, unify and support community consensus for such an initiative. Hence, our activities in this area, discussed in Chapter 6, were substantial: white papers; SSL technology workshops and roadmaps; support for the Optoelectronics Industry Development Association (OIDA), DOE and Senator Bingaman's office; extensive public relations and media activities; and a worldwide SSL community website. Many science and technology advances and breakthroughs were also enabled under this GCLDRD, resulting in: 55 publications; 124 presentations; 10 book chapters and reports; 5 U.S. patent applications including 1 already issued; and 14 patent disclosures not yet applied for. Twenty-six invited talks were given, at prestigious venues such as the American Physical Society Meeting, the Materials Research Society Meeting, the AVS International Symposium, and the Electrochemical Society Meeting. This report contains a summary of these science and technology advances and breakthroughs, with Chapters 1-5 devoted to the five technical task areas: 1 Fundamental Materials Physics; 2 111-Nitride Growth Chemistry and Substrate Physics; 3 111-Nitride MOCVD Reactor Design and In-Situ Monitoring; 4 Advanced Light-Emitting Devices; and 5 Phosphors and Encapsulants. Chapter 7 (Appendix A) contains a listing of publications, presentations, and patents. Finally, the SSL GCLDRD resulted in numerous actual and pending follow-on programs for Sandia, including multiple grants from DOE and the Defense Advanced Research Projects Agency (DARPA), and Cooperative Research and Development Agreements (CRADAs) with SSL companies. Many of these follow-on programs arose out of contacts developed through our External Advisory Committee (EAC). In h s and other ways, the EAC played a very important role. Chapter 8 (Appendix B) contains the full (unedited) text of the EAC reviews that were held periodically during the course of the project.

More Details
TYPE SAND Report YEAR 2004
OSTIDOI
Results 26–42 of 42
Results 26–42 of 42