Silicon qubit performance in the presence of inhomogeneous strain
Abstract not provided.
Publications
Studying Si/SiGe disordered alloys within effective mass theory
Abstract not provided.
Valley splitting of single-electron Si MOS quantum dots
Applied Physics Letters
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.
Exploiting Adiabaticity and Spin Refocusing for Circuit Model Multi-Qubit Gates
Abstract not provided.
Predicting the valley splitting of silicon quantum dots directly from a device layout
Abstract not provided.
Silicon Device Modeling: From Atoms to Hilbert Spaces
Abstract not provided.
Predicting the valley splitting of silicon quantum dots directly from a device layout
Abstract not provided.
Full-scope modeling of semiconductor devices for quantum information processing
Abstract not provided.
Device-Level Models Using Multi-Valley Effective Mass
Abstract not provided.
Multi-valley effective mass theory for device-level modeling of open quantum dynamics
Abstract not provided.
Rapid simulation of donors in silicon using internally consistent effective mass theory
Abstract not provided.
Accurate and efficient simulations of donors in silicon
arXiv posting
Abstract not provided.
12 Results