Technology: Silicon-carbide thyristor

Developers:

• GeneSiC Semiconductor Inc.
• Sandia National Laboratories
• U.S. DOE – Office of Electricity, Energy Storage Program
• U.S. Army/Armament Research, Development and Engineering Center

Ultra-high-voltage Silicon Carbide Thyristor

A DOE Energy Storage Systems project, managed by Sandia National Laboratories in partnership with GeneSiC Semiconductor Inc., and the U.S. Army Armament Research, Development and Engineering Center (ARDEC), has developed an Ultra-high-voltage Silicon Carbide Thyristor.The semiconductor device allows next-generation “smart grid” power electronics system to be built up to 10 times smaller and lighter than current silicon-based technologies. These packaged-power devices are the world’s first commercially available, high-voltage, high-frequency, high-current, high-temperature, single-chip SiC-based thyristors. Their performance advantages are expected to spur innovations in utility-scale power electronics hardware and to increase the accessibility and use of distributed energy resources.

The developers adopted a different operational physics for this device, which operates on minority carrier transportation and an integrated third terminal rectifier, which is one more than other commercial SiC devices. The developers adopted a new fabrication technique that supports ratings above 6,500 V, as well as a new gate-anode design for high-current devices. Capable of performing at temperatures up to 300° C and current at 80 A, the SiC Thyristor offers up to 10 times higher voltage, four times higher blocking voltages, and 100 times faster switching frequency than silicon-based thyristors.

For more information, download the factsheet (PDF, 2.4 mb) or watch the video.

Technology: High-temperature Silicon Carbide (SiC) Power Module

Developers:

• Arkansas Power Electronics International, Inc.
• Univ. of Arkansas
• Rohm Co., Ltd.
• Sandia National Laboratories
• U.S. DOE – Office of Electricity, Energy Storage Program

The High-temperature Silicon Carbide (SiC) Power Module is a high-temperature 250°C power module implementing silicon carbide power transistors and integrated high-temperature silicon on insulator (HTSOI) gate driver to reduce system electrical loss by less than 50 percent.

Power electronics modules are the core components of all power electronics systems. In essence, power electronics systems convert electrical energy from one form (provided by a source) into another form (consumed by a load). They are required to drive electric motors (such as those for electric and hybrid vehicles), convert energy from renewable sources (i.e., solar arrays or wind generators), and provide power for a wide variety of electronics and electronic systems (DC power supplies and inverters).

The high-temperature silicon carbide power module is the world’s first commercial high-temperature (250°C) silicon carbide-based power electronics module. The 50 kW (kilowatt) (1200 V (volt) /150 A (ampere) peak) silicon carbide (SiC) power modules are rated up to 250°C junction temperature and integrate high-temperature gate drivers.

For more information, download the factsheet (PDF, 2.8 mb).

Technology: Emitter Turn-Off (ETO) Thyristor Switch

Developers:

• Solitronics
• Virginia Tech
• American Competitiveness Institute
• U.S. DOE – Office of Electricity, Energy Storage Program
• Sandia National Laboratories

The Emitter Turn-Off (ETO) Thyristor Switch (pdf) is an inexpensive, high power/high speed, semiconductor switch for use in high power converters requiring elevated current and reverse voltage blocking capabilities. The ETO is a key enabling technology for Flexible AC Transmission System (FACTS) for safeguarding the nation’s electric power transmission and distribution.The ETO features a low gate drive power consumption with high reliability. The gate drive power does not vary significantly with the ETO current and switching frequency, approximately 15-25 watts.

Applications of the ETO include distributed energy resources, energy storage, FACTs, motor drives, and power system protection. The advantages of the ETO include a 5,000 A snubberless turn-off capability, low switching and conduction losses, low-cost device and circuit, ease for series and parallel operation, and built-in overcurrent protection and current sensor.

Superconducting Magnetic Energy Storage: Development and construction of a 10MVA liquid helium cooled Superconducting Magnetic Energy Storage (SMES) device by Los Alamos National Laboratory (LANL) and deployment to stabilize the 900 mile, ac intertie between BPA and Southern California. (ref: LANL Publication)