Publications

Baczewski, Andrew D.; Witzel, Wayne W.; Jacobson, Noah T.; Jock, Ryan M.; Sharma, Peter A.; Vudatha, Rohith V.; Ward, Daniel R.; Carroll, Malcolm

Abstract not provided.

Brickson, Mitchell I.; Campbell, Quinn C.; Jacobson, Noah T.; Baczewski, Andrew D.

Abstract not provided.

Brickson, Mitchell I.; Maurer, Leon M.; Jacobson, Noah T.; Baczewski, Andrew D.

Abstract not provided.

Jock, Ryan M.; Jock, Ryan M.; Rudolph, Martin R.; Rudolph, Martin R.; Harvey-Collard, Patrick H.; Harvey-Collard, Patrick H.; Jacobson, Noah T.; Jacobson, Noah T.; Wendt, J.R.; Wendt, J.R.; Pluym, Tammy P.; Pluym, Tammy P.; Dominguez, Jason J.; Dominguez, Jason J.; Manginell, Ronald P.; Manginell, Ronald P.; Lilly, Michael L.; Lilly, Michael L.; Carroll, Malcolm; Carroll, Malcolm

Abstract not provided.

Rudolph, Martin R.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Ryan-Anderson, Ciaran R.; Jacobson, Noah T.; Landahl, Andrew J.

Abstract not provided.

Jock, Ryan M.; Jacobson, Noah T.; Rudolph, Martin R.; Ward, Daniel R.; Baczewski, Andrew D.; Carrol, Malcolm C.; Luhman, Dwight R.

Abstract not provided.

Applied Physics Letters

Gamble, John K.; Harvey-Collard, Patrick; Jacobson, Noah T.; Baczewski, Andrew D.; Nielsen, Erik N.; Maurer, Leon; Montano, Ines M.; Rudolph, Martin R.; Carroll, Malcolm; Yang, C.H.; Rossi, A.; Dzurak, A.S.; Muller, Richard P.

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.

Nanoscale

Chou, C.T.; Jacobson, Noah T.; Moussa, J.E.; Baczewski, Andrew D.; Chuang, Y.; Liu, C.Y.; Li, J.Y.; Lu, Tzu-Ming L.

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than ∼6 × 1011 cm-2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.

Baczewski, Andrew D.; Gamble, John K.; Jacobson, Noah T.; Muller, Richard P.; Nielsen, Erik N.; Harvey-Collard, Patrick H.; Carroll, Malcolm

Abstract not provided.