Publications

Marinella, Matthew J.; Agarwal, Sapan A.; Hughart, David R.; Plimpton, Steven J.; Parekh, Ojas D.; Quach, Tu-Thach Q.; DeBenedictis, Erik; Goeke, Ronald S.; Hsia, Alexander W.; Aimone, James B.; James, Conrad D.

Abstract not provided.

2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings

Agarwal, Sapan A.; Parekh, Ojas D.; Quach, Tu-Thach Q.; James, Conrad D.; Aimone, James B.; Marinella, Matthew J.

As transistors start to approach fundamental limits and Moore's law slows down, new devices and architectures are needed to enable continued performance gains. New approaches based on RRAM (resistive random access memory) or memristor crossbars can enable the processing of large amounts of data[1, 2]. One of the most promising applications for RRAM crossbars is brain inspired or neuromorphic computing[3, 4].

Tierney, Brian D.; Hjalmarson, Harold P.; McLain, Michael L.; Hughart, David R.; Marinella, Matthew J.; Mamaluy, Denis M.

Abstract not provided.

ECS Transactions (Online)

Gao, Xujiao G.; Mamaluy, Denis M.; Mickel, Patrick R.; Marinella, Matthew J.

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.

Agarwal, Sapan A.; Parekh, Ojas D.; Quach, Tu-Thach Q.; James, Conrad D.; Aimone, James B.; Marinella, Matthew J.

Abstract not provided.

DeBenedictis, Erik; Cook, Jeanine C.; Metodi, Tzvetan S.; Hoemmen, Mark F.; Marinella, Matthew J.; Schiek, Richard S.; Zima, Hans Z.

Abstract not provided.

James, Conrad D.; Aimone, James B.; Plimpton, Steven J.; Naegle, John H.; Marinella, Matthew J.; Dixon, Kevin R.; Follett, David R.

Abstract not provided.

Marinella, Matthew J.; Agarwal, Sapan A.; Hughart, David R.; Mickel, Patrick R.; Hsia, Alexander W.; Plimpton, Steven J.; Decker, Seth D.; Apodaca, Roger A.; Aimone, James B.; James, Conrad D.; Draelos, Timothy J.

Abstract not provided.

Gao, Xujiao G.; Mamaluy, Denis M.; Mickel, Patrick R.; Marinella, Matthew J.

Abstract not provided.

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

Abstract not provided.

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

This report discusses aspects of neuromorphic computing and how it is used to model microsystems.

Mickel, Patrick R.; Aimone, James B.; Marinella, Matthew J.

Abstract not provided.

Desjarlais, Michael P.; Thompson, Aidan P.; Brennecka, Geoffrey L.; Marinella, Matthew J.

Density-functional theory calculations, ab-initio molecular dynamics, and the Kubo-Greenwood formula are applied to predict electrical conductivity in Ta2Ox (0 x 5) as a function of composition, phase, and temperature, where additional focus is given to various oxidation states of the O monovacancy (VOn; n=0,1+,2+). Our calculations of DC conductivity at 300K agree well with experimental measurements taken on Ta2Ox thin films and bulk Ta2O5 powder-sintered pellets, although simulation accuracy can be improved for the most insulating, stoichiometric compositions. Our conductivity calculations and further interrogation of the O-deficient Ta2O5 electronic structure provide further theoretical basis to substantiate VO0 as a donor dopant in Ta2O5 and other metal oxides. Furthermore, this dopant-like behavior appears specific to neutral VO cases in both Ta2O5 and TiO2 and was not observed in other oxidation states. This suggests that reduction and oxidation reactions may effectively act as donor activation and deactivation mechanisms, respectively, for VO0 in transition metal oxides.