DOE NNSA Vanguard Program
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ACM International Conference Proceeding Series
DRAM scalability is becoming more challenging, pushing the focus of the research community towards alternative memory technologies. Many emerging non-volatile memory (NVM) devices are proving themselves to be good candidates to replace DRAM in the coming years. For example, the recently announced 3D-XPoint memory by Intel/Micron promises latencies that are comparable to DRAM, while being non-volatile and much more dense. While emerging NVMs can be fabricated in different form factors, the most promising (from a performance perspective) are NVM-based DIMMs. Unfortunately, there is a shortage of studies that explore the design options for NVM-based DIMMs. Because of the read and write asymmetries in both power consumption and latency, as well as limited write endurance, which often requires wear-leveling techniques, NVMs require a specialized controller. The fact that future on-die memory controllers are expected to handle different memory technologies pushes future hardware towards on-DIMM controllers. In this paper, we propose an architectural model for NVM-based DIMMs with internal controllers, explore their design space, evaluate different optimizations and reach out to several architectural suggestions. Finally, we make our model publicly available and integrate it with a widely used architectural simulator.
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The presentation documented the technical approach of the team and summary of the results with sufficient detail to demonstrate both the value and the completion of the milestone. A separate SAND report was also generated with more detail to supplement the presentation.
This milestone is a tri-lab deliverable supporting ongoing Co-Design efforts impacting applications in the Integrated Codes (IC) program element Advanced Technology Development and Mitigation (ATDM) program element. In FY14, the trilabs looked at porting proxy application to technologies of interest for ATS procurements. In FY15, a milestone was completed evaluating proxy applications in multiple programming models and in FY16, a milestone was completed focusing on the migration of lessons learned back into production code development. This year, the co-design milestone focuses on extracting the knowledge gained and/or code revisions back into production applications.
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DRAM technology is the main building block of main memory, however, DRAM scaling is becoming very challenging. The main issues for DRAM scaling are the increasing error rates with each new generation, the geometric and physical constraints of scaling the capacitor part of the DRAM cells, and the high power consumption caused by the continuous need for refreshing cell values. At the same time, emerging Non- Volatile Memory (NVM) technologies, such as Phase-Change Memory (PCM), are emerging as promising replacements for DRAM. NVMs, when compared to current technologies e.g., NAND-based ash, have latencies comparable to DRAM. Additionally, NVMs are non-volatile, which eliminates the need for refresh power and enables persistent memory applications. Finally, NVMs have promising densities and the potential for multi-level cell (MLC) storage.
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