Publications

Muller, R.P., Tracy, L.A., Nguyen, K., Ten Eyck, G.A., Lilly, M., Carroll, M.S., Nielsen, E., Gao, X., Young, R.W., Salinger, A.G., Tezaur, I.K., Bishop, N.C., Carr, S.M., Lu, T.M., & Lu, T.M. (2013). The QCAD Framework for Quantum Device Modeling [Conference]. https://www.osti.gov/biblio/1063472

Nielsen, E., Rahman, R., Muller, R.P., & Muller, R.P. (2012). A many-electron tight binding method for the analysis of quantum dot systems. Journal of Applied Physics, 112(11). https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84871213093&origin=inward

Gao, X., Nielsen, E., Muller, R.P., Young, R.W., Salinger, A.G., Tezaur, I.K., & Tezaur, I.K. (2012). Poisson-Schrodinger Solvers in QCAD [Presentation]. https://www.osti.gov/biblio/1694417

Muller, R.P., Cygan, R.T., Deng, J., Frischknecht, A.L., Hewson, J.C., Moffat, H.K., Tenney, C.M., Schultz, P.A., Wagner, G.J., & Wagner, G.J. (2012). Modeling thermal abuse in transportation batteries. 10.2172/1055648

Nguyen, K., Young, R.W., Nielsen, E., Rahman, R., Muller, R.P., Carroll, M.S., Lilly, M., Bishop, N.C., Tracy, L.A., Wendt, J.R., Grubbs, R.K., Pluym, T., Stevens, J., Dominguez, J., & Dominguez, J. (2012). Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias [Conference]. https://www.osti.gov/biblio/1061180

Muller, R.P., Lu, T.M., Tracy, L.A., Ten Eyck, G.A., Lilly, M., Carroll, M.S., Nielsen, E., Gao, X., Young, R.W., Salinger, A.G., Tezaur, I.K., Rahman, R., Bishop, N.C., Carr, S.M., & Carr, S.M. (2012). The QCAD Framework for Quantum Device Modeling [Conference]. https://www.osti.gov/biblio/1140638

Nguyen, K., Stevens, J., Grubbs, R.K., Pluym, T., Dominguez, J., Muller, R.P., Carroll, M.S., Jacobson, N.T., Witzel, W.M., Bishop, N.C., Tracy, L.A., Carr, S.M., Lu, T.M., Wendt, J.R., & Wendt, J.R. (2012). Pulsed electron transition measurements in a silicon double quantum dot [Conference]. https://www.osti.gov/biblio/1294362

Gao, X., Nielsen, E., Muller, R.P., Young, R.W., Salinger, A.G., Carroll, M.S., & Carroll, M.S. (2012). The QCAD framework for quantum device modeling. Computational Electronics (IWCE), 2012 15th International Workshop on. https://doi.org/10.1109/IWCE.2012.6242832

Gao, X., Nielsen, E., Muller, R.P., Salinger, A.G., Young, R.W., Carroll, M.S., & Carroll, M.S. (2012). The QCAD framework for quantum device modeling [Conference]. https://www.osti.gov/biblio/1294367

Bishop, N.C., Carr, S.M., Lu, T.M., Lilly, M., Carroll, M.S., Young, R.W., Nielsen, E., Muller, R.P., Rahman, R., Tracy, L.A., Wendt, J.R., & Wendt, J.R. (2012). Computer assisted design of poly-silicon gated enhancement-mode lateral double quantum dot devices for quantum computing [Conference]. https://www.osti.gov/biblio/1068415

Rahman, R., Nielsen, E., Muller, R.P., Carroll, M.S., & Carroll, M.S. (2012). Effect of fixed charge gate oxide defects on the exchange energy of a multi-valley silicon double quantum dot [Conference]. https://www.osti.gov/biblio/1068439

Muller, R.P., Frischknecht, A.L., Schultz, P.A., Wagner, G.J., Deng, J., Moffat, H.K., & Moffat, H.K. (2012). Battery Abuse Modeling [Presentation]. https://www.osti.gov/biblio/1657451

Nielsen, E., Young, R.W., Muller, R.P., Salinger, A.G., Carroll, M.S., & Carroll, M.S. (2012). Optimization of Realistic Silicon Double Quantum Dots through Simulation [Presentation]. https://www.osti.gov/biblio/1688608

Nielsen, E., Salinger, A.G., Muller, R.P., Young, R.W., & Young, R.W. (2011). The QCAD Framework for Quantum Device Simulation [Presentation]. https://www.osti.gov/biblio/1688601

Muller, R.P., Bishop, N.C., Lu, T.M., Pluym, T., Bielejec, E.S., Lilly, M., Landahl, A.J., Carroll, M.S., Young, R.W., Nielsen, E., Rahman, R., Witzel, W.M., Gao, X., Tracy, L.A., Bussmann, E., & Bussmann, E. (2011). Development of few-electron Si quantum dots for use as qubits [Conference]. https://www.osti.gov/biblio/1113275

Gao, X., Nielsen, E., Young, R.W., Salinger, A.G., Muller, R.P., & Muller, R.P. (2011). Semiclassical Poisson and Self-Consistent Poisson-Schrodinger Solvers in QCAD [Conference]. https://www.osti.gov/biblio/1113318

Rahman, R., Muller, R.P., Nielsen, E., Carroll, M.S., & Carroll, M.S. (2011). Impact of charged defects on silicon MOS quantum dots [Conference]. https://www.osti.gov/biblio/1143483

Muller, R.P., Nielsen, E., Gao, X., Salinger, A.G., Young, R.W., Verley, J.C., Carroll, M.S., & Carroll, M.S. (2011). CAD tools for quantum dots [Conference]. https://www.osti.gov/biblio/1120151

Rahman, R., Muller, R.P., Nielsen, E., Carroll, M.S., & Carroll, M.S. (2011). Impact of Charged Defects on MOS Quantum Dots [Conference]. https://www.osti.gov/biblio/1120265

Rahman, R., Nielsen, E., Muller, R.P., Carroll, M.S., & Carroll, M.S. (2011). Atomistic simulations of valley splitting in silicon quantum dots in the presence of disorder [Conference]. https://www.osti.gov/biblio/1108825

Muller, R.P., Schultz, P.A., Cygan, R.T., Frischknecht, A.L., Larson, R.S., Kanouff, M.P., Hewson, J.C., Moffat, H.K., & Moffat, H.K. (2010). Modeling thermal abuse of Li ion transportation batteries [Conference]. https://www.osti.gov/biblio/1027028

Rahman, R., Muller, R.P., Levy, J.E., Carroll, M.S., & Carroll, M.S. (2010). Atomistic simulations of coherent tunneling adiabatic passage in an imperfect donor chain [Conference]. https://www.osti.gov/biblio/1022982

Rahman, R., Muller, R.P., Carroll, M.S., & Carroll, M.S. (2010). Excited states and valley effects in a negatively charged impurity in a silicon FinFET [Conference]. https://www.osti.gov/biblio/1022171

Rahman, R., Muller, R.P., Carroll, M.S., & Carroll, M.S. (2010). Atomistic simulations of coherent tunneling adiabatic passage in an imperfect donor chain [Conference]. https://www.osti.gov/biblio/1021700

Sears, M.P., Wills, A.E., Desjarlais, M.P., Modine, N.A., Wright, A.F., Muller, R.P., & Muller, R.P. (2010). Implementation of the Optimized Effective Potential (OEP) and Exact Exchange (EXX) in Socorro [Conference]. https://www.osti.gov/biblio/1018464