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All-electrical universal control of a double quantum dot qubit in silicon MOS

Technical Digest - International Electron Devices Meeting, IEDM

Harvey-Collard, Patrick; Jock, Ryan M.; Jacobson, Noah T.; Baczewski, Andrew D.; Mounce, Andrew M.; Curry, Matthew J.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Rudolph, Martin R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladrière, Michel; Carroll, Malcolm

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

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TYPE Conference Poster YEAR 2018
ScopusOSTI

Tunnel coupling tuning of a QD-donor S-T qubit

Jock, Ryan M.; Jock, Ryan M.; Rudolph, Martin R.; Rudolph, Martin R.; Harvey-Collard, Patrick H.; Harvey-Collard, Patrick H.; Jacobson, Noah T.; Jacobson, Noah T.; Wendt, J.R.; Wendt, J.R.; Pluym, Tammy P.; Pluym, Tammy P.; Dominguez, Jason J.; Dominguez, Jason J.; Manginell, Ronald P.; Manginell, Ronald P.; Lilly, Michael L.; Lilly, Michael L.; Carroll, Malcolm; Carroll, Malcolm

Abstract not provided.

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TYPE Conference Poster YEAR 2017
OSTI

Coupling MOS quantum dot and phosphorous donor qubit systems

Technical Digest - International Electron Devices Meeting, IEDM

Rudolph, Martin R.; Harvey-Collard, P.; Jock, R.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, M.P.; Carroll, Malcolm

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

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TYPE Conference Poster YEAR 2017
ScopusOSTIDOI

Valley splitting of single-electron Si MOS quantum dots

Applied Physics Letters

Gamble, John K.; Harvey-Collard, Patrick; Jacobson, Noah T.; Baczewski, Andrew D.; Nielsen, Erik N.; Maurer, Leon; Montano, Ines M.; Rudolph, Martin R.; Carroll, Malcolm; Yang, C.H.; Rossi, A.; Dzurak, A.S.; Muller, Richard P.

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.

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TYPE Journal Article YEAR 2016
ScopusOSTIDOI
Results 26–50 of 85
Results 26–50 of 85