QCAD Simulation and Optimization of Semiconductor Quantum Dots
Journal of Applied Physics
Abstract not provided.
Publications
Efficient Self-Consistent Quantum Transport Simulator for Quantum Well Devices
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Dynamically corrected gates for singlet-triplet spin qubits with control-dependent errors
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Poisson-Schrodinger Solvers in QCAD
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
STM fabrication of double quantum dot charge qubits for adiabatic quantum computing
Abstract not provided.
Exchange Gate Design in Two Donor Qubits
Abstract not provided.
The QCAD framework for quantum device modeling
Abstract not provided.
The QCAD framework for quantum device modeling
Computational Electronics (IWCE), 2012 15th International Workshop on
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly Si double quantum dots (DQDs) developed for quantum computing. The simulator core includes Poisson, Schrodinger, and Configuration Interaction solvers which can be run individually or combined self-consistently. The simulator is built upon Sandia-developed Trilinos and Albany components, and is interfaced with the Dakota optimization tool. It is being developed for seamless integration, high flexibility and throughput, and is intended to be open source. The QCAD tool has been used to simulate a large number of fabricated silicon DQDs and has provided fast feedback for design comparison and optimization.
Computer assisted design of poly-silicon gated enhancement-mode lateral double quantum dot devices for quantum computing
Abstract not provided.
Optimization of Realistic Silicon Double Quantum Dots through Simulation
Abstract not provided.
Effect of fixed charge gate oxide defects on the exchange energy of a multi-valley silicon double quantum dot
Abstract not provided.
The QCAD Framework for Quantum Device Simulation
Abstract not provided.
Semiclassical Poisson and Self-Consistent Poisson-Schrodinger Solvers in QCAD
Abstract not provided.
Development of few-electron Si quantum dots for use as qubits
Abstract not provided.
A Many-Electron Tight Binding Method for the Analysis of Quantum Dot Systems
Physical Review B
Abstract not provided.
Impact of charged defects on silicon MOS quantum dots
Abstract not provided.
Impact of Charged Defects on MOS Quantum Dots
Abstract not provided.
CAD tools for quantum dots
Abstract not provided.
Atomistic simulations of valley splitting in silicon quantum dots in the presence of disorder
Abstract not provided.
Results 101–124 of 124