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Mechanisms for radiation dose-rate sensitivity of bipolar transistors

Hjalmarson, Harold P.; Hjalmarson, Harold P.; Shaneyfelt, Marty R.; Schwank, James R.; Edwards, Arthur H.; Hembree, Charles E.; Mattsson, Thomas M.

Mechanisms for enhanced low-dose-rate sensitivity are described. In these mechanisms, bimolecular reactions dominate the kinetics at high dose rates thereby causing a sub-linear dependence on total dose, and this leads to a dose-rate dependence. These bimolecular mechanisms include electron-hole recombination, hydrogen recapture at hydrogen source sites, and hydrogen dimerization to form hydrogen molecules. The essence of each of these mechanisms is the dominance of the bimolecular reactions over the radiolysis reaction at high dose rates. However, at low dose rates, the radiolysis reaction dominates leading to a maximum effect of the radiation.

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Spontaneous ionization of hydrogen atoms at the Si-SiO2 interface

Proposed for publication in Physical Review B.

Hjalmarson, Harold P.; Edwards, Arthur H.; Schultz, Peter A.; Hjalmarson, Harold P.

We present a series of electronic structure calculations that demonstrate a mechanism for spontaneous ionization of hydrogen at the Si-SiO{sub 2} interface. Specifically, we show that an isolated neutral hydrogen atom will spontaneously give up its charge and bond to a threefold coordinated oxygen atom. We refer to this entity as a proton. We have calculated the potential surface and found it to be entirely attractive. In contrast, hydrogen molecules will not undergo an analogous reaction. We relate these calculations both to proton generation experiments and to hydrogen plasma experiments.

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2 Results
2 Results