Dose Enhancement in Radiation Testing

Dose enhancement effects from material interfaces with different atomic number elements can affect ionization and the resulting material response. Scattered photon contributions with the higher photoelectric cross section from low energy photons can significantly affect the dose at a point near an interface. This can be an important effect in modern semiconductors with high-κ dielectrics, such as hafnium, and metal vias. While we use coupled electron photon radiation transport to model this effect, we also need to validate our modeling. In our experiments we often design test objects so as to minimize the scattered photon content and reduce its influence on our validation measurements.

Contact: Russell DePriest