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George T. Wang

Sandia National Laboratories' Solid State Lighting Energy Frontier Research Center

Dr. George T. Wang
Sandia National Laboratories
P.O. Box 5800, MS-1086
Albuquerque, NM 87185
Office: (505) 284-9212      
Fax: (505) 844-3211
Last Updated 1/2011


Dr. George T. Wang Research Research Navigation Bar 3D Templated Growth Nanowire Synthesis Nanowire Characterization Nanowire Devices 3D Templated Growth

Nanowire Synthesis

We are exploring the synthesis of III-nitride nanowires and nanorods by both "bottom-up" and "top-down" methods. Our bottom-up approaches use nanoscale metal (Ni) catalyst particles to direct 1D nanowire growth via the vapor-liquid-solid (VLS) mechanism. Our top-down methods involve the selective etching of III-nitride films to create periodic nanorod arrays. For both methods, we use metal organic chemical vapor deposition (MOCVD), which is used in commercial device growth (such as white LEDs) and which allows for doping and the creation of heterostructures with abrupt junctions.

Selected Publications

Q. Li, and G. T. Wang, “Improvement in Aligned GaN Nanowire Growth using Submonolayer Ni Catalyst Films,” Applied Physics Letters 93, 043119 (2008). [link]

G. T. Wang, A. A. Talin, D. J. Werder et al., “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773-5780 (2006). [link]

Aligned GAN nanowires
Bottom-up growth of aligned GaN nanowires
Multiwall AlN nanotube
Multi-walled AlN nanotube

GaN nanorod green
Periodic GaN nanorod array via top-down


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