Heavy Ion Backscattering Spectrometry (HIBS)

Description of Technique: HIBS is used to detect ultra-trace levels of heavy impurities on the surface of a Si wafer. HIBS has advantages over TXRF, including:

  1. Improved sensitivity for most elements
  2. Quantifying composition without standards
  3. Measurement on rough surfaces.

HIBS is accomplished by focusing a 120 keV beam of C+ions onto a small spot at the wafer's surface. The backscattered ions are collected by a time-of-flight (TOF) detector array with a large solid angle. The flight time of the backscattered C identifies the near-surface impurities and the total counts in each peak quantifies the composition.

Performance Specifications

      Detection Limits: ~6 x109 Fe/cm2 to ~3x108 Au.cm2 on Si (100x better with VPD).
      Elemental Range: Ar to Pu.
      X-Y Scanning: Anywhere on a 200 mm wafer.
      Spatial Resolution: 3 mm.
      Sampling Depth: ~10 nm.
      Quantitative: Composition without standards.
      Destructive: Yes, for wafer reapplication. No, for further analysis.
      Specimen Requirements: 10 mm x 10 mm minimum, 200 mm wafer maximum.
      Cleanliness: Class 10 environment for sample loading.
      Analysis time: ~30 minutes per point.

Key Applications

  1. Complement or replace TXRF and ICP-MS measurements.
  2. Calibration of standards.
  3. Research and development of processes and tools.
  4. Investigating process contamination (wet station, plasma, implant, etc.).

Point of Contact: Barney L. Doyle