Publications
Publication | Type | Year |
---|---|---|
Excited States and Valley Effects in a Negatively Charged Donor in a Si FinFET4th Annual Workshop on Silicon Science & Technology for Quantum Computing |
Conference Paper – 2012 Conference Paper | 2012 |
Spin readout and addressability of phosphorus-donor-clusters in siliconNature Physics |
Journal Article – 2012 Journal Article | 2012 |
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite BiasQuantum Computing Program Review 2012 |
Conference Paper – 2012 Conference Paper | 2012 |
The QCAD Framework for Quantum Device ModelingQuantum Computing Program Review |
Conference Paper – 2012 Conference Paper | 2012 |
Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain eectscore size and strain eectsSPIE Optics+Photonics |
Conference Paper – 2012 Conference Paper | 2012 |
Impact of charged defects on silicon MOS quantum dots2011 International Workshop On Silicon Quantum Electronics |
Conference Paper – 2012 Conference Paper | 2012 |
Interface enhanced spin-orbit splitting of single acceptorsNature Physics |
Journal Article – 2012 Journal Article | 2012 |
Exchange Gate Design in Two Donor QubitsAquarius Eab |
Other Publication – 2012 Other Publication | 2012 |
STM fabrication of double quantum dot charge qubits for adiabatic quantum computingNo-MOS Atomic-Precision Device Regime Workshop |
Conference Paper – 2012 Conference Paper | 2012 |
Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-coresJournal of Applied Physics |
Journal Article – 2012 Journal Article | 2012 |
Computer assisted design of poly-silicon gated enhancement-mode, lateral double quantum dot devices for quantum computingAmerican Physical Society March Meeting 2012 |
Conference Paper – 2012 Conference Paper | 2012 |
Effect of fixed charge gate oxide defects on the exchange energy of a multi-valley silicon double quantum dotAPS March Meeting |
Conference Paper – 2012 Conference Paper | 2012 |
Development of few-electron Si quantum dots for use as qubitsQuantum TechnologyComputational Models for Quantum Device Design |
Conference Paper – 2011 Conference Paper | 2011 |
A Many-Electron Tight Binding Method for the Analysis of Quantum Dot SystemsPhysical Review B |
Journal Article – 2011 Journal Article | 2011 |
Spin-Bath Decoherence of a Si/SiGe Quantum DotInternational Workshop on Silicon Quantum Electronics |
Other Publication – 2011 Other Publication | 2011 |
Impact of Charged Defects on MOS Quantum DotsQuantum Computing Program Review |
Conference Paper – 2011 Conference Paper | 2011 |
Electric field induced reduction in charging energies of single donors in siliconPhysical Review B |
Journal Article – 2011 Journal Article | 2011 |
Atomistic simulations of valley splitting in silicon quantum dots in the presence of disorderAPS March meeting |
Conference Paper – 2011 Conference Paper | 2011 |
Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contactSilicon S&T Quantum Computing 4th Annual Workshop |
Conference Paper – 2010 Conference Paper | 2010 |
Atomistic simulations of coherent tunneling adiabatic passage in an imperfect donor chain4th Annual Workshop on Silicon Science & Technology for Quantum Computing |
Conference Paper – 2010 Conference Paper | 2010 |
Atomistic simulations of coherent tunneling adiabatic passage in an imperfect donor chain4th Annual Workshop on Silicon Science & Technology for Quantum Computing |
Conference Paper – 2010 Conference Paper | 2010 |
Excited states and valley effects in a negatively charged impurity in a silicon FinFET4th Annual Workshop on Silicon Science & Technology for Quantum Computing |
Conference Paper – 2010 Conference Paper | 2010 |
Exotic atomic physics observed in a two electron analogue-atom in siliconNature Physics |
Journal Article – 2010 Journal Article | 2010 |
Document Title | Type | Year |