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Publication	Type	Year
In-situ Annealing Studies of Radiation Induced Defects in InAs/InAsSb Type-II Superlattices under Ion Irradiation Hardened Electronics And Radiation Technology Clark N. Kadlec, Edward S. Bielejec, Michael Goldflam, Emil A. (SNL) Kadlec, Evan Michael Anderson, Eric A. Shaner, Jin K. Kim, Peter Andrew Schultz, John F. Klem, Samuel D. Hawkins https://www.osti.gov/search/identifier:1575172	Conference Paper – 2018 Conference Paper	2018
Modeling field emission from real surfaces Engineering Sciences Research Foundation External Review Christopher Hudson Moore, Morgann Berg, Michael T. Brumbach, Ezra Bussmann, Paul G. Clem, Harold P. Hjalmarson, Matthew M. Hopkins, Peter Andrew Schultz, David Scrymgeour, Sean Smith https://www.osti.gov/search/identifier:1506577	Display or Poster (non-conference) – 2018 Display or Poster (non-conference)	2018
From first-principles defect chemistry to device damage models of radiation effects in III-V semiconductors. MMM2018 (The 9th International Conference Multiscale Modeling in Materials) Peter Andrew Schultz, Harold P. Hjalmarson	Abstract – 2018 Abstract	2018
Computing properties of Pt surfaces for understanding electron emission 7th International Workshop on Mechanisms of Vacuum Arcs Peter Andrew Schultz, Harold P. Hjalmarson, Ezra Bussmann, Matthew M. Hopkins, Sean Smith, Paul G. Clem, Christopher Hudson Moore, David Scrymgeour, Morgann Berg, Taisuke Ohta	Abstract – 2018 Abstract	2018
Work function of platinum thin films with disorder American Physical Society March Meeting 2018 Morgann Berg, Harold P. Hjalmarson, David Scrymgeour, Michael T. Brumbach, Peter Andrew Schultz, Paul G. Clem, Matthew M. Hopkins, Christopher Hudson Moore, Taisuke Ohta, Sean Smith, Ezra Bussmann https://www.osti.gov/search/identifier:1503439	Conference Paper – 2018 Conference Paper	2018
Characterizing The Influence Of Electrode Surface Structure On Field Emission 7th International Workshop on Mechanisms of Vacuum Arcs (MeVArc 2018) Ezra Bussmann, Sean Smith, David Scrymgeour, Taisuke Ohta, Harold P. Hjalmarson, Peter Andrew Schultz, Paul G. Clem, Matthew M. Hopkins, Christopher Hudson Moore https://www.osti.gov/search/identifier:1575338	Conference Paper – 2018 Conference Paper	2018
Radiation Induced Defects in InAs/InAsSb Type-II Superlattices Characterized with Time-Resolved Microwave Reflectance and Density Functional Theory 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Peter Andrew Schultz, Clark N. Kadlec, Edward S. Bielejec, Michael Goldflam, Jin K. Kim, Jonathan Edward Moussa, Eric A. Shaner	Abstract – 2018 Abstract	2018
Understanding phosphorus donor insertion on Si(001) from PH3 dissociation in dimer windows formed by hydrogen lithography MRS 2017 Fall Meeting Peter Andrew Schultz, Andrew David Baczewski, Richard P. Muller, Justin Koepke, Ezra Bussmann, Robert J. Simonson https://www.osti.gov/search/identifier:1488743	Conference Paper – 2017 Conference Paper	2017
From narrow gap to ultra-wide band gap systems: End of band gap problem excuses for defect calculations. 2017 Materials Research Society Fall Meeting and Exhibit Peter Andrew Schultz, Arthur H. (AFRL) Edwards, Renee M. (AFRL) Van Ginhoven, Andrew C. (AFRL) Pineda https://www.osti.gov/search/identifier:1485048	Conference Paper – 2017 Conference Paper	2017
Treatment of defects and defect levels in ternary alloys using special quasirandom structures American Physical Society March Meeting 2018 Peter Andrew Schultz	Abstract – 2017 Abstract	2017
Multi-scale modeling of dopant arrays in silicon APS March Meeting Andrew David Baczewski, Ezra Bussmann, John King (Microsoft Research) Gamble, Noah Tobias Jacobson, Justin Koepke, Richard P. Muller, Peter Andrew Schultz, Luke (SNL) Shulenburger, Robert J. Simonson, Lisa A Tracy, Shashank Misra	Abstract – 2017 Abstract	2017
The journey from forensic to predictive materials science using density functional theory Modelling and Simulation in Materials Science and Engineering. Peter Andrew Schultz https://www.osti.gov/search/identifier:1399567	Journal Article – 2017 Journal Article	2017
Comparing Radiation Induced Lifetime Degradation in InAs/InAsSb Type-II Superlattices using 4.5 and 63 MeV Proton Irradiations Nsrec Edward S. Bielejec, Emil Andrew Kadlec, Clark N. Kadlec, Michael Goldflam, Eric A. Shaner, Jin K. Kim, Jonathan Edward Moussa, Peter Andrew Schultz https://www.osti.gov/search/identifier:1464086	Conference Paper – 2017 Conference Paper	2017
Effects of 4.5 MeV and 63 MeV Proton Irradiation on Carrier Lifetime of InAs/InAsSb Type-II Superlattices SPIE Optics + Photonics 2017 Clark N. Kadlec, Emil Andrew Kadlec, Michael Goldflam, Edward S. Bielejec, Jin K. Kim, B.V. Olson, John F. Klem, Samuel D. Hawkins, Jonathan Edward Moussa, Peter Andrew Schultz, C.P Morath, G.D. Jenkins, V.M. Cowan, Eric A. Shaner https://www.osti.gov/search/identifier:1464068	Conference Paper – 2017 Conference Paper	2017
Understanding phosphorus donor insertion on Si(001) from PH_3 dissociation in dimer windows formed by hydrogen lithography 2017 MRS Fall Meeting and Exhibit Peter Andrew Schultz, Andrew David Baczewski, Richard P. Muller, Justin Koepke, Ezra Bussmann, Robert J. Simonson	Abstract – 2017 Abstract	2017
From narrow gap to ultra wide band gap systems, the end of band gap problem excuses for defect calculations 2017 Materials Research Society Fall Meeting Peter Andrew Schultz, Arthur H. Edwards, Renee M. Van Ginhoven, Andrew C. Pineda	Abstract – 2017 Abstract	2017
Atomic-precision fabrication and metrology for epitaxial Si quantum devices 2017 MRS Fall Meeting and Exhibit Justin Koepke, David Scrymgeour, Robert J. Simonson, Peter Andrew Schultz, Andrew David Baczewski, Richard P. Muller, Shashank Misra, Malcolm S. Carroll https://www.osti.gov/search/identifier:1455363	Conference Paper – 2017 Conference Paper	2017
Vacuum Field Emission Models, Measurements, and Simulations 6th International Workshop on Mechanisms of Vacuum Arcs Matthew M. Hopkins, Ezra Bussmann, Sean Smith, David Scrymgeour, Michael T. Brumbach, Harold P. Hjalmarson, Peter Andrew Schultz, Paul G. Clem, Christopher Hudson Moore https://www.osti.gov/search/identifier:1429166	Conference Paper – 2017 Conference Paper	2017
Effects of 4.5 MeV and 63 MeV Proton Irradiation on Carrier Lifetime of InAs/InAsSb Type-II Superlattices SPIE Optical Engineering Conference Emil Andrew Kadlec, Michael Goldflam, Edward S. Bielejec, Jin K. Kim, B.V. Olson, John F. Klem, Samuel D. Hawkins, Jonathan Edward Moussa, Peter Andrew Schultz, Eric A. Shaner	Abstract – 2017 Abstract	2017
Comparing Radiation Induced Lifetime Degradation in InAs/InAsSb Type-II Superlattices using 4.5 and 63 MeV Proton Irradiations Nsrec 2017 Edward S. Bielejec, Emil Andrew Kadlec, Michael Goldflam, Eric A. Shaner, Jin K. Kim, Jonathan Edward Moussa, Peter Andrew Schultz	Abstract – 2017 Abstract	2017
Vacuum Field Emission Models, Measurements, and Simulations 6th International Workshop on Mechanisms of Vacuum Arcs Matthew M. Hopkins, Ezra Bussmann, Sean Smith, David Scrymgeour, Michael T. Brumbach, Paul G. Clem, Harold P. Hjalmarson, Christopher Hudson Moore, Peter Andrew Schultz	Abstract – 2017 Abstract	2017
Early‐stage Electrical Breakdown involving Tunneling American Physical Society March Meeting Harold P. Hjalmarson, Christopher Hudson Moore, Peter Andrew Schultz, Ezra Bussmann, David Scrymgeour, Matthew M. Hopkins	Abstract – 2016 Abstract	2016
Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective Invited Seminar at EPFL (Ecole Polytechnique Fdrale Lausanne) Peter Andrew Schultz https://www.osti.gov/search/identifier:1399207	Presentation (non-conference) – 2016 Presentation (non-conference)	2016
Modeling charged defects and defect levels in semiconductors and oxides with density functional theory ? an improved, inside-out perspective. Seminar at EPFL (Ecole polytechnique fdrale de Lausanne Peter Andrew Schultz	Abstract – 2016 Abstract	2016
Modeling charged defects and defect levels for radiation effects in semiconductors and oxides with density functional theory. Invited seminar at CEA-Saclay (Commissariat a Energie Atomique) Peter Andrew Schultz	Abstract – 2016 Abstract	2016
Document Title	Type	Year

Results 51–75 of 134

Publications

In-situ Annealing Studies of Radiation Induced Defects in InAs/InAsSb Type-II Superlattices under Ion Irradiation

Modeling field emission from real surfaces

From first-principles defect chemistry to device damage models of radiation effects in III-V semiconductors.

Computing properties of Pt surfaces for understanding electron emission

Work function of platinum thin films with disorder

Characterizing The Influence Of Electrode Surface Structure On Field Emission

Radiation Induced Defects in InAs/InAsSb Type-II Superlattices Characterized with Time-Resolved Microwave Reflectance and Density Functional Theory

Understanding phosphorus donor insertion on Si(001) from PH3 dissociation in dimer windows formed by hydrogen lithography

From narrow gap to ultra-wide band gap systems: End of band gap problem excuses for defect calculations.

Treatment of defects and defect levels in ternary alloys using special quasirandom structures

Multi-scale modeling of dopant arrays in silicon

The journey from forensic to predictive materials science using density functional theory

Comparing Radiation Induced Lifetime Degradation in InAs/InAsSb Type-II Superlattices using 4.5 and 63 MeV Proton Irradiations

Effects of 4.5 MeV and 63 MeV Proton Irradiation on Carrier Lifetime of InAs/InAsSb Type-II Superlattices

Understanding phosphorus donor insertion on Si(001) from PH_3 dissociation in dimer windows formed by hydrogen lithography

From narrow gap to ultra wide band gap systems, the end of band gap problem excuses for defect calculations

Atomic-precision fabrication and metrology for epitaxial Si quantum devices

Vacuum Field Emission Models, Measurements, and Simulations

Effects of 4.5 MeV and 63 MeV Proton Irradiation on Carrier Lifetime of InAs/InAsSb Type-II Superlattices

Comparing Radiation Induced Lifetime Degradation in InAs/InAsSb Type-II Superlattices using 4.5 and 63 MeV Proton Irradiations

Vacuum Field Emission Models, Measurements, and Simulations

Early&#8208;stage Electrical Breakdown involving Tunneling

Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective

Modeling charged defects and defect levels in semiconductors and oxides with density functional theory ? an improved, inside-out perspective.

Modeling charged defects and defect levels for radiation effects in semiconductors and oxides with density functional theory.

Early‐stage Electrical Breakdown involving Tunneling