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Bureau-Oxton, Chloe; Rudinger, Kenneth M. ; Jacobson, Noah T. ; Ward, Daniel R. ; Anderson, John M. ; Manginell, Ronald P. ; Wendt, J.R. ; Pluym, Tammy P. ; Lilly, Michael L. ; Pioro-Ladriere, Michel; Luhman, Dwight R. ; Carroll, Malcolm
Jacobson, Noah T.
Harvey-Collard, Patrick; Jacobson, Noah T. ; Bureau-Oxton, Chloe; Jock, Ryan M. ; Srinivasa, Vanita S. ; Mounce, Andrew M. ; Ward, Daniel R. ; Anderson, John M. ; Manginell, Ronald P. ; Wendt, J.R. ; Pluym, Tammy P. ; Lilly, Michael L. ; Luhman, Dwight R. ; Pioro-Ladriere, Michel; Carroll, Malcolm
Rudolph, Martin R. ; Harvey-Collard, Patrick; Jock, Ryan M. ; Jacobson, Noah T. ; Wendt, J.R. ; Pluym, Tammy P. ; Dominguez, Jason J. ; Ten Eyck, Gregory A. ; Manginell, Ronald P. ; Lilly, Michael L. ; Carroll, Malcolm ; Sharma, Peter A.
Baczewski, Andrew D. ; Gao, Xujiao G. ; Jacobson, Noah T. ; Nielsen, Erik N. ; Salinger, Andrew G. ; Muller, Richard P. ; Gamble, John K.
Bureau-Oxton, Chloe; Harvy-Collard, Patrick; Jacobson, Noah T. ; Jock, Ryan M. ; Srinivasa, Vanita S. ; Mounce, Andrew M. ; Ward, Daniel R. ; Anderson, John M. ; Manginell, Ronald P. ; Wendt, J.R. ; Pluym, Tammy P. ; Lilly, Michael L. ; Luhman, Dwight R. ; Pioro-Ladriere, Michel; Carroll, Malcolm
Physical Review. X
Carroll, Malcolm ; Harvey-Collard, Patrick; Anjou, Martin'; Rudolph, Martin R. ; Jacobson, Noah T. ; Dominguez, Jason J. ; Ten Eyck, Gregory A. ; Wendt, J.R. ; Pluym, Tammy P. ; Lilly, Michael L. ; Coish, William; Pioro-Ladriere, Michel
Jacobson, Noah T.
Bureau-Oxtron, Chloe; Luhman, Dwight R. ; Jacobson, Noah T. ; Ward, Daniel R. ; Anderson, John M. ; Wendt, J.R. ; Pluym, Tammy P. ; Lilly, Michael L. ; Pioro-Ladriere, Michel; Carroll, Malcolm
Carroll, Malcolm ; Harvey-Collard, Patrick; Jacobson, Noah T. ; Jock, Ryan M. ; Mounce, Andrew M. ; Srinivasa, Vanita S. ; Ward, Daniel R. ; Wendt, J.R. ; Rudolph, Martin R. ; Pluym, Tammy P. ; Gamble, John; Witzel, Wayne W.
Carroll, Malcolm ; Harvey-Collard, Patrick; Jock, Ryan M. ; Jacobson, Noah T. ; Mounce, Andrew M. ; Baczewski, Andrew D. ; Rudolph, Martin R. ; Wendt, J.R. ; Ward, Daniel R. ; Curry, Matthew J. ; Anderson, John M. ; Manginell, Ronald P. ; Lilly, Michael L. ; Pluym, Tammy P. ; Pioro-Ladriere, Michel
Ryan-Anderson, Ciaran R. ; Landahl, Andrew J. ; Parekh, Ojas D. ; Jacobson, Noah T. ; Jiao, Yang
Rudolph, Martin R. ; England, Troy D. ; Jock, Ryan M. ; Sharma, Peter A. ; Mounce, Andrew M. ; Jacobson, Noah T. ; Ward, Daniel R. ; Pluym, Tammy P. ; Silva, Beverly L. ; Anderson, John M. ; Wendt, J.R. ; Lilly, Michael L. ; Carroll, Malcolm
Carroll, Malcolm ; Harvey-Collard, Patrick; Jock, Ryan M. ; Jacobson, Noah T. ; Baczewski, Andrew D. ; Mounce, Andrew M. ; Curry, Matthew J. ; Ward, Daniel R. ; Anderson, John M. ; Manginell, Ronald P. ; Wendt, J.R. ; Rudolph, Martin R. ; Pluym, Tammy P. ; Lilly, Michael L. ; Pioro-Ladriere, Michel
Jock, Ryan M. ; Jacobson, Noah T. ; Harvey-Collard, Patrick; Mounce, Andrew M. ; Srinivasa, Vanita S. ; Ward, Daniel R. ; Manginell, Ronald P. ; Wendt, J.R. ; Rudolph, Martin R. ; Pluym, Tammy P. ; Gamble, John K.; Baczewski, Andrew D. ; Witzel, Wayne W. ; Carroll, Malcolm
Jacobson, Noah T. ; Gamble, John K.; Srinivasa, Vanita S. ; Baczewski, Andrew D. ; Jock, Ryan M. ; Harvey-Collard, Patrick; Mounce, Andrew M. ; Rudolph, Martin R. ; Witzel, Wayne W. ; Carroll, Malcolm
Jacobson, Noah T. ; Jock, Ryan M. ; Harvey-Collard, Patrick; Mounce, Andrew M. ; Srinivasa, Vanita S. ; Ward, Daniel R. ; Anderson, John M. ; Manginell, Ronald P. ; Wendt, J.R. ; Rudolph, Martin R. ; Pluym, Tammy P. ; Gamble, John K.; Baczewski, Andrew D. ; Witzel, Wayne W. ; Carroll, Malcolm
Baczewski, Andrew D. ; Gamble, John K.; Jacobson, Noah T. ; Muller, Richard P. ; Nielsen, Erik N.
Carroll, Malcolm ; Lemyre, Julien; Pioro-Ladriere, Michel; Jacobson, Noah T. ; Rochette, Sophie; Anderson, John; Manginell, Ronald P. ; Pluym, Tammy P. ; Ward, Daniel R.
Rudolph, Martin R. ; Jock, Ryan M. ; Jacobson, Noah T. ; Wendt, J.R. ; Pluym, Tammy P. ; Dominguez, Jason J. ; Ten Eyck, Gregory A. ; Manginell, Ronald P. ; Lilly, Michael L. ; Carroll, Malcolm
Ryan-Anderson, Ciaran R. ; Jacobson, Noah T. ; Landahl, Andrew J.
Jock, Ryan M. ; Rudolph, Martin R. ; Harvey-Collard, Patrick; Jacobson, Noah T. ; Wendt, J.R. ; Pluym, Tammy P. ; Dominguez, Jason J. ; Manginell, Ronald P. ; Lilly, Michael L. ; Carroll, Malcolm
Mounce, Andrew M. ; Rudolph, Martin R. ; Jacobson, Noah T. ; Harvey-Collard, Patrick; Wendt, J.R. ; Pluym, Tammy P. ; Dominguez, Jason J. ; Carroll, Malcolm
Technical Digest - International Electron Devices Meeting, IEDM
Rudolph, Martin R. ; Jock, Ryan M. ; Jacobson, Noah T. ; Wendt, J.R. ; Pluym, Tammy P. ; Dominguez, Jason J. ; Ten Eyck, Gregory A. ; Manginell, Ronald P. ; Lilly, Michael L. ; Carroll, Malcolm ; Harvey-Collard, P.
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Applied Physics Letters
Laros, James H. ; Harvey-Collard, Patrick; Jacobson, Noah T. ; Baczewski, Andrew D. ; Nielsen, Erik N. ; Maurer, Leon; Montano, Ines M. ; Rudolph, Martin R. ; Carroll, Malcolm ; Yang, C.H.; Rossi, A.; Dzurak, A.S.; Muller, Richard P.
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.
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