Center for Computing Research (CCR)
Center for Computing Research (CCR)

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Designer quantum materials

Misra, Shashank; Ward, Daniel R.; Baczewski, Andrew D.; Campbell, Quinn T.; Schmucker, Scott W.; Mounce, Andrew M.; Tracy, Lisa A.; Lu, T.M.; Marshall, Michael; Campbell, Deanna M.

Quantum materials have long promised to revolutionize everything from energy transmission (high temperature superconductors) to both quantum and classical information systems (topological materials). However, their discovery and application has proceeded in an Edisonian fashion due to both an incomplete theoretical understanding and the difficulty of growing and purifying new materials. This project leverages Sandia's unique atomic precision advanced manufacturing (APAM) capability to design small-scale tunable arrays (designer materials) made of donors in silicon. Their low-energy electronic behavior can mimic quantum materials, and can be tuned by changing the fabrication parameters for the array, thereby enabling the discovery of materials systems which can't yet be synthesized. In this report, we detail three key advances we have made towards development of designer quantum materials. First are advances both in APAM technique and underlying mechanisms required to realize high-yielding donor arrays. Second is the first-ever observation of distinct phases in this material system, manifest in disordered 2D sheets of donors. Finally are advances in modeling the electronic structure of donor clusters and regular structures incorporating them, critical to understanding whether an array is expected to show interesting physics. Combined, these establish the baseline knowledge required to manifest the strongly-correlated phases of the Mott-Hubbard model in donor arrays, the first step to deploying APAM donor arrays as analogues of quantum materials.

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TYPE SAND Report YEAR 2019
DOIOSTI

Compressed Optimization of Device Architectures for Semiconductor Quantum Devices

Physical Review Applied

Ward, Daniel R.; Frees, Adam; Gamble, John K.; Blume-Kohout, Robin; Eriksson, M.A.; Friesen, Mark; Coppersmith, S.N.

Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum-mechanical objects with unprecedented accuracy. In semiconductor quantum-dot qubits, this manipulation requires controlling the dot orbital energies, the tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, the positions of which are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the "compressed optimization of device architectures" (CODA), in order both to efficiently identify sparse sets of voltage changes that control quantum systems and to introduce a metric that can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes.

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TYPE Journal Article YEAR 2019
DOIDOIOSTIOSTI

A silicon metal-oxide-semiconductor electron spin-orbit qubit

Nature Communications

Jock, Ryan M.; Jacobson, N.T.; Harvey-Collard, Patrick; Mounce, Andrew M.; Srinivasa, Vanita; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald; Wendt, Joel R.; Rudolph, Martin; Pluym, Tammy; Bays, Nathan R.; Baczewski, Andrew D.; Witzel, Wayne M.; Carroll, M.S.

The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin-orbit (SO) effects. Here we advantageously use interface-SO coupling for a critical control axis in a double-quantum-dot singlet-triplet qubit. The magnetic fieldorientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface-SO contributions. The resulting all-electrical, two-Axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T2m, of 1.6 ?s is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-Axis qubit control, while not increasing noise relative to other material choices.

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TYPE Journal Article YEAR 2018
DOIOSTIScopus
Results 1–25 of 45
Results 1–25 of 45
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