\ |<$t3T)T)T)   " J }WT$ee"dd;E'@C 6\)Obj CC:\PROGRA~1\ProCite5\Styles\Standard\ANSI-Am National Standards.posTimes New Roman Reference List. ߃P)扰߃PObj MObj iURL&ChapITitleNAuthorDateCites,USTR#STR#aanllalelestheEPUDTRSLDOMS6[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?DOMS[?[?[?[?[?DOMS6[?[?[?[?[?[?E#H[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?DOMS[?[?[?[?[?TROS6, TROS9>(,,TROSTROS2.`   '@}B;^   '@}B;^^@l ;k\)TROS "#$%TROS &'()TROS *+,-RSET8Jw.疱ξk!H@7@h?I%s~Jce@\ <P! D   ((@@N   RSETq "@   @<@ $@ RSET*|@/ - PRSETn @2.`   '@}B;^ !TROS "#$%RSET8Jw.疱ξk!H@7@h?I%s~Jce@\ <P! D   ((@@N   RSETq "@   @<@ $@ RSET*|@/ - PRSETn @2.`   '@}B;^a+ X TROSTROS \). 4, major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high-power operation. The present advanced stage of development of SiC substrates and metal-oxide-semiconductor technology makes SiC the leading contender for high-temperature and high-power applications if ohmic contacts and interface-st ate densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relat ively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high-temperat ure performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC l ight-emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN-based LEDs. These products should find wide use in full color display and other technologies. ;1?<3Adams, A. R. //Asada, M. //Suematsu, Y. //Arai, S. 3l=o/3Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo3l=o/wThe Temperature-Dependence of the Efficiency and Current of In1-Xgaxasyp1-Y Lasers Related to Intervalence Absorptionwl=o/10.1.2l=^N~ (L)A $M_DJ 4L @_,L ]DA 4A $M_DJ 4L @_,L ]DA 582-595A $M_DJ 4L @_,L ]DA %C\\As01mesant\Procite Databases\WCS\Articles/Kobayashi N 1982 04.pdfC\A $M_DJ 4L @_,L ]DA +266A $M_DJ 4L @_,L ]DA 48820;@)Yamamoto, Y. //Machida, S. //Nilsson, O. )=xSXjNippon Telegraph & Tel Publ Corp,Musashino Elect Commun ; Royal Inst Technol/S-10044 Stockholm 70//Swedenj=xSX?Amplitude Squeezing in a Pump-Noise-Suppressed Laser Oscillator?=xSX10.4.3=xSX Physical Review A=xSX Article$M_@_-1986$M_@_-34$M_@_-5$M_@_- 4025-4042 $M_@_-%B\\As01mesant\Procite Databases\WCS\Articles/Yamamoto Y 1986 11.pdfB$M_@E_-+261$M_@_-50590;@"Yeh, P. //Yariv, A. //Hong, C. S. "=vCaltech/Pasadena//Ca/91125=vKElectromagnetic Propagation in Periodic Stratified Media .1. General TheoryK=v05.3.1=v )Journal of the Optical Society of America)=v Article$M_ 9D:@_<:\67$M_ 9D:@_<:\4$M_ 9D:@_<:\423-438$M_ 9D:@_<:y\%8\\As01mesant\Procite Databases\WCS\Articles/Yeh 1977.pdf8+239$M_ 9D:@_<:\50840elegraph & Tel Pub@_TR38200?oBx <4 ,,,DTL \ d l,t|* ,,,, #$%'(),+,,-./,1 123d)57$8,:,:4=<?DALBTD,D dF\GlHtI|J,KLN,OPQQ -R -STUWW-XZ-\]_$-`bcdfhh h,-ij4-l$m,n4o<p<-qD-rLsDuL-u \wTxlydztzT-{|l)}|~\- d-l-t-)|-- *,4 *$*<--DLT-\dlt-*|---,4<DLT\ dzpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&<v Illinois,Coordinated Sci Lab/Urbana//Il/61801q=rJ: YLarge-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor-Device Technologies=rJ: =rJ: =rJ: =rJ: )=rJ: 12.0=rJ:  Journal of Applied Physics=rJ:  Review$M_dT@_Ld Aug 1, 1994 $M_dT@_Ld76$M_dT@_Ld3$M_dT@_Ld 1363-1398 $M_dT@_Ld213$M_dT@_Ld%@\\As01mesant\Procite Databases\WCS\Articles\Morkoc H 1994 08.pdf@$M_dT@_Ld* In the past several years, research in each of the wide-band-gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high-power operation. The present adva;1?<3Adams, A. R. //Asada, M. //Suematsu, Y. //Arai, S. 3l=o/3Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo3l=o/wThe Temperature-Dependence of the Efficiency and Current of In1-Xgaxasyp1-Y Lasers Related to Intervalence Absorptionwl=o/10.1.2l=^N~4g.=@ IAbernathy, C. R. //Pearton, S. J. //Caruso, R. //Ren, F. //Kovalchik, J. I7=^q!ԫ$At&T Bell Labs/Murray Hill//Nj/07974$7=^q!ԫMUltrahigh Doping of GaAs by Carbon During Metalorganic Molecular-Beam EpitaxyM7=^q!ԫ06.4.17=^q!ԫ Applied Physics Letters7=^q!ԫ Article$M_\=>@_>4\ 1989 OCT 23 $M_\=>@_>4\55$M_\=>@_>4\17$M_\=>@_>4\ 1750-1752 $M_\=>@_>4\%D\\As01mesant\Procite Databases\WCS\Articles\Abernathy CR 1989 10.pdfD+183$M_\=>@_>4\10<@GMorkoc, H.//Strite, S.//Gao, G. B.//Lin, M. E.//Sverdlov, B.//Burns, M.G=rJ: qUniv Illinois,Mat Res Lab,104 S Goodwin Ave/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801q=rJ: YLarge-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor-Device Technologies=rJ: =rJ: =rJ: =rJ: )=rJ: 12.0;1?<3Adams, A. R. //Asada, M. //Suematsu, Y. //Arai, S. 3l=o/3Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo3l=o/wThe Temperature-Dependence of the Efficiency and Current of In1-Xgaxasyp1-Y Lasers Related to Intervalence Absorptionwl=o/10.1.2l=l=o/10.1.2l=z :jN~E,TPf=@qI< Physical Review LettersPf=@qI< 1966 Aug 8 $M_l\@_Tbl17$M_l\@_Tbl312-316Pf=@qI<Pf=@qI<%C\\As01mesant\Procite Databases\WCS\Articles\Hopfield JJ 1966 08.pdf,$M_l\@_Tbl]$M_l\@_Tbl+275$M_l\@_Tbl61650n;@2 Adams, A. R.  c=tt6Univ Surrey,Dept Phys/Guildford Gu2 5xh/Surrey/England6c=ttQBand-Structure Engineering for Low-Threshold High-Efficiency Semiconductor-Lasers2=tt =tt=tt10.2.1c=tt Electronics Lettersc=tt Article@_,@_ ,1986@_,@_ ,22@_,@_ ,5@_,@_ ,249-250@_,@_ ,%@\\As01mesant\Procite Databases\WCS\Articles/Adams AR 1986 02.pdf@@N_,@_ ,+358@_,@_ ,50Dept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/55434p=oUHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasHDept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/55434p=oUHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasHIyS T\V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the fo rm of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.$M_l\@_TGl+104$M_l\@_T @Gl,Electron$M_l\@_TGl70;@PAgrawal, G. P. P=pr$At&T Bell Labs/Murray Hill//Nj/07974$P=pr\Population Pulsations and Nondegenerate 4-Wave Mixing in Semiconductor-Lasers and Amplifiers\P=pr10.2.5(/=pr =Journal of the Optical Society of America B-Optical Physics ;=P=pr Article$M_ @_ 1988$M_ @_ 5$M_ @_ 1$M_ @_ 147-159$M_ @_ %B\\As01mesant\Procite Databases\WCS\Articles/Agrawal GP 1988 01.pdfB$M_ @_ +145($M_ @_ 807==?#Olbright, Gregory R. //Jewell, J.L.=@o,=@o,=@o,GIntegration of transistors with vertical-cavity surface-emitting lasersG=@o,11.4=@o, US5283447 =@o,+2666f~2DL>=@FTAdesida, I. //Mahajan, A. //Andideh, E. //Khan, M. A. //Olsen, D. T. //Kuznia, J.N. Tp=oUUniv Illinois,Ctr Compound Semicond ; Univ Illinois,Dept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/55434p=oUHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasHp=oU08.2.3p=oU Applied Physics Lettersp=oU Article$M_l\@_TGl Nov 15, 1993 $M_l\@_TGl63$M_l\@_TGl20$M_l\@_TGl 2777-2779 $M_l\@_TGl%A\\As01mesant\Procite Databases\WCS\Articles\Adesida I 1993 11.pdfA$M_l\@_TGl*The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 ;=?PAgrawal, G. P. P=pr$At&T Bell Labs/Murray Hill//Nj/07974$P=pr\Population Pulsations and Nondegenerate 4-Wave Mixing in Semiconductor-Lasers and Amplifiers\P=pr10.2.5(/=pr =Journal of the Optical Society of America B-Optical Physics=@o,+26(=@o,64200^N~ Ld(=@o,64200;@dAgrawal, G. P. 0=pr$At&T Bell Labs/Murray Hill//Nj/07974$0=prbGain Nonlinearities in Semiconductor-Lasers: Theory and Application to Distributed Feedback Lasersb0=pr10.4.20=pr #IEEE Journal of Quantum Electronics#0=pr Article$M_@_1987$M_@_23$M_@_6$M_@_860-868$M_@_%B\\As01mesant\Procite Databases\WCS\Articles/Agrawal GP 1987 06.pdfB$M_@_+146$M_@_100 mz =@(Capasso, F. //Mohammed, K. //Cho, A. Y. (`=piAt&T Bell Labs,Electr & Photon Mat Res Dept,Solid State ; Univ Illinois,Dept Elect Engn/Urbana// Il/61801i`=pResonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications` =p04.1.1.1`=p #IEEE Journal of Quantum Electronics#`=p Article$M_ST@_T 1986 SEP$M_ST@_T22$M_ST@_T9$M_ST@_T 1853-1869 $M_ST@_T%A\\ yAs01mesant\Procite Databases\WCS\Articles/Capasso F 1986 09.pdfA+443$M_ST@_T6640frequencies7x=t@05.2.2x] <l~>\l ];@Purcell, E. M.x=t@7Spontaneous emission probabilities at radio frequencies7x=t@05.2.2x =t@ Physical Reviewx=t@1946"$M_""@_"N"69"$M_""@_"N"681"$M_" "@_"N"%?\\As01mesant\Procite Databases\WCS\Articles\Purcell em 1946.pdf,"$M_""@_"N""$M_""@_"N"51690 ;@BAlbrektsen, O. //Arent, D. J. //Meier, H. P. //Salemink, H. W. M. B?=@u0'Ibm Corp,Div Res,Zurich Res Lab/Ch-8803'?=@u0 UTunneling Microscopy and Spectroscopy of Molecular-Beam Grown GaAs-AlGaAs InterfacesU?=@u006.1.3?=@u0 Applied Phys ics Letters?=@u0 Article$M_dGH@_HL  1990 JUL 2 $M_dGH@_HL 57$M_dGH@_HL  1$M_dGH@_HL 31-33$M_dGH@_HL %D\\As01mesant\Procite Databases\WCS\Articles\Albrektsen O 1990 07.pdf,$M_dGH@_HL _$M_dGH@_HL +113$M_dGH@_HL 150 H=(t3 At&T Bell Labs/Holmdel//Nj/07733 H=(t3+Quantum Transport in an Electron-Wave Guide+H=(t3 H=(t3 At&T Bell Labs/Holmdel//Nj/07733 H=(t3+Quantum Transport in an Electron-Wave Guide+H=(t3 2bd, ;@Timp, G. //Chang, A. M. //Mankiewich, P. //Behringer, R. //Cunningham, J. E. //Chang, T. Y. //Mankiewich, P. //Behringer, R. //Cunningham, J. E. //Chang, T. Y. //Howard, R. E.  H=(t3 At&T Bell Labs/Holmdel//Nj/07733 H=(t3+Quantum Transport in an Electron-Wave Guide+H=(t3 03.4.2H=(t3H=(t3 Physical Review LettersH=(t3 Article$M_@_,b  1987 Aug 10 $M_@_,b59$M_@_,b6$M_@_,b732-735$M_@_,b%>\\As 01mesant\Procite Databases\WCS\Articles\Timp G 1987 08.pdf,$M_@_,b$M_@_,b+209$M_@_,b51710 t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 12810 t $M_}  @_ R t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 12810 t $M_}  @_ R t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 12810 t $M_}  @_ R t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 128103cN~,| Physical Review LettersHHB ArticleHHBP 1987 Jun 29 HHBP58HHBP26HHBP 2814-2817 HHBP%>\\As01mesant\Procite Databases\WCS\Articles\Timp G 1987 06.pdf,HHBPuHHBP+145HHBP51720;@rTimp, G. //Baranger, H. U. //Devegvar, P. //Cunningham, J. E. //Howard, R. E. //Behringer, R. //Mankiewich, P. M. r J=rL At&T Bell Labs/Holmdel//Nj/07733 J=rL?Propagation Around a Bend in a Multichannel Electron Wave-Guide? J=rL03.4.2/=rL/=rL Physical Review Letters J=rL Article$M_st@_tL 1988 May 16 $M_st@_tL60$M_st@_tL20$M_st@_tL 2081-2084 $M_st@_tL%>\\As01mesant\Procite Databases\WCS\Articlest\Timp G 1988 05.pdf>$M_st@_tL+133$M_st@_tL51730ombination Velocity on N-Type InP<=@s=@s02.3.2=@s Applied Physics Lettersombination Velocity on N-Type InP<=@s=@s02.3.2=@s Applied Physics Lettersk+t*;@Casey, H. C. //Buehler, E. =@s'Bell Tel Labs Inc/Murray Hill//Nj/07974'=@s=Evidence for Low Surface Recombination Velocity on N-Type InP<=@s=@s02.3.2=@s Applied Physics Letters=@s Article9$M_4l@_d,719779$M_4l@_d,7309$M_4l@_d,759$M_4l@_d,7247-2499$M_4l@_d,7%=\\As01mesant\Procite Databases\WCS\Articles/Casey HC 1976.pdf=9$M_4l@_d,7+1659$M_4l@_d,751740;@&kNelson, R. J. //Williams, J. S. //Leamy, H. J. //Miller, B. //Casey, H. C. //Parkinson, B. A. //Heller, A. kxj=v_'Bell Tel Labs Inc/Murray Hill//Nj/07974'xj=v_FReduction of GaAs Surface Recombination Velocity by Chemical TreatmentFxj=v_08.2.1xj=v{ =1?nOsbourn, G. C.H=pȒ&Sandia Natl Labs/Albuquerque//Nm/87185&H=pȒ,Strained-Layer Superlattices: a Brief Review,H=pȒ04.2.0H=pȒ #IEEE Journal of Quantum Electronics#H=pȒ Review$M_ľ@_ĵ1986$M_ľ@_ĵ22$M_ľ@_ĵ9$M_ľ@_ĵ 1677-1681 $M_ľ@_ 61550ĵ+126$M_ľ@_ĵ 61550} =mN~, metallic and dielectric materials can be used to obtain the required three-dimensional periodic variations in dielectric constant, but dissipation due to free carrier absorption will limit application of such structures at the technologically useful infrared wavelengths(4), On the other hand, three-dimensional photonic crystals fabricated in low-loss gallium arsenide show only a weak 'stop band'  (that is, range of frequencies at which propagation of light is forbidden) at the wavelengths of interest(5), Here we report the construction of a three-dimensional infrared photonic crystal on a sili con wafer using relatively standard microelectronics fabrication technology, Our crystal shows a large stop band (10-14.5 mu m), strong attenuation of light within this band (similar to 12 dB per unit cell) and a spectral response uniform to better than 1 per cent over the area of the 6-inch wafer.Op'$M_y'|"@_t"p'+94p'$M_y'|"@_t"p',Band-Gap .p'$M_y'|"@_t"p'51770{ =U=?J>Bowers, J. E. //Hemenway, B. R. //Gnauck, A. H. //Wilt, D. P. >Э=غv(jAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; S#Э=غv( Article$M_@_ 1986 JUN$M_@_ 22$M_@_ 6$M_@_ 833-844$M_@_ %9\\Aeron\Procite Databases\WCS\Articles/Bowers JE 1986.pdf9$M_O@_ +117$M_@_ 5450h.=U=?xAgrawal, G. P. //Olsson, N. A. @=@r7RUniv Rochester,Inst Opt/Rochester//Ny/14627 ; at&T Bell Labs/Murray Hill//Nj/07974R@=$TN~2*;@:Lin, S. Y. //Fleming, J. G. //Hetherington, D. L. //Smith, B. K. //Biswas, R. //Ho, K. M. //Sigalas, M. M. //Zubrzycki, W. //Kurtz, S. R. //Bur, J.  =8n|xSandia Natl Labs,Pob 5800,Albuquerque,Nm 87185 ; Iowa State Univ Sci & Technol,Ames Lab,Dept Phys & Astron,Ames,Ia 50011x =8n|FA Three-Dimensional Photonic Crystal Operating at Infrared WavelengthsF =8n|05.3.2 =8n| Nature =8n| Articlep'$M_y'|"@_t"p' Jul 16, 1998 p'$M_y'|"@_t"p'394p'$M_y'|"@_t"p'6690p'$M_y'|"@_t"p'251-253p'$M_y'|"@_t"p'%>\\As01mesant\Procite Databases\WCS\Articles/Lin SY 1998 07.pdf>0=8n|*OThe ability to confine and control light in three dimensions would have important implications for quantum optics and quantum-optical devices: the modification of black-body radiation, the localization of light to a fraction of a cubic wavelength, and thus the realization of single-mode light-emitting diodes, are but a few examples(1-3). Photonic crystals-the optical analogues of electronic crystal-provide a means for achieving these goals. Combinations of metallic and dielectric materials can be used to obtain the required three-dimensional periodic variations in dielectric constant, but dissipation due to free carrier absorption will limit applicatio{ =U=?J>Bowers, J. E. //Hemenway, B. R. //Gnauck, A. H. //Wilt, D. P. >Э=غv(jAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; S Opt/Rochester//Ny/14627 ; at&T Bell Labs/Murray Hill//Nj/07974R@=abs/Murray Hill//Nj/07974R@=^N~,h.=@xAgrawal, G. P. //Olsson, N. A. @=@r7RUniv Rochester,Inst Opt/Rochester//Ny/14627 ; at&T Bell Labs/Murray Hill//Nj/07974R@=@r7aSelf-Phase Modulation and Spectral Broadening of Optical Pulses in Semiconductor-Laser Amplifiers9@=@r7@=@r7@=@r7@=@r7@=@r710.5.1@=@r7 #IEEE Journal of Quantum Electronics#@=@r7 Articlep$M_,y.@_.,p1989p$M_,y.@_.,p25p$M_,y.@_.,p11p$M_,y.@_.,p 2297-2306 p$M_,y.@_.,p%C\\As01mesant\Procite Databases\WCS\Articles/Agrawal GP 1989 11 .pdfCp$M_,y.@_.,p+168'p$M_,y.@_.,p120鞆=1?(Khan, M.A.//Schulze, R.G.//Skogman, R.A.HQ=o^HQ=o^HQ=o^QTunable cut-off UV de64210h.==?0John, S. //Wang, J. =IyԫEUniv Toronto,Dept Phys,60 St George St/Toronto M5s 1a7/Ontario/CanadaE=IyԫWQuantum Electrodynamics Near a Photonic Band-Gap: Photon Bound-States and Dressed AtomsW=Iyԫ05.3.4=Iyԫ Physical Review Letters=Iyԫ Article$$M_L-\\As01mesant\Procite Databases\WCS\Articles\John S 1990 05.pdf,@/hH9XXF`S(=Iyԫ+160$$M_L-\\As01mesant\Procite Databases\WCS\Articles/Winful HG 1982.pdf>=@_LF\\As01mesant\Procite Databases\WCS\Articles/Mendez EE 1984.pdf>$M_TD@_<\T+100$!$M_TD@_<\T51890";@Curtice, W. R. 2Rca Labs,Ctr Microwave Technol/Princeton//Nj/085402@A Mesfet Model for Use in the Design of GaAs Integrated-Circuits@09.1.1 4IEEE Transactions on Micr"owave Theory and Techniques4 Article1980285448-456%?\\As01mesant\Procite Databases\WCS\Articles/Curtice WR 1980.pdf?+13251900#;@ Fukui, H. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'.Optimal Noise-Figure of Microwave GaAs-Mesfets.09.1.3 %IEEE Transactions on Electron Devices% Article1979#s267 1032-1037 %?\\As01mesant\Procite Databases\WCS\Articles/Fukui H 1979 07.pdf?+14251910$=XKt<>Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima 774,Japan>#=XKt<ZHigh-Power ; Long-Lifetime Ingan/Gan/Algan-Based Laser Diodes Grown on $=XKt<>Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima 774,Japan>#=XKt<ZHigh-Power ; Long-Lifetime Ingan/Gan/Algan-Based Laser Diodes Grown on ?JzN~,ԫ=vԫ*gThree-dimensional crystals of air spheres in titania (TiO2) with radii between 120 and 1000 nanometers were made by filling the Voids in artificial opals by precipitation from a Liquid-phase chemical reaction and subsequently removing the original opal material by calcination. These macroporous materials are a new class of photonic band gap crystals for the optical spectrum. Scanning electron microscopy, Raman spectroscopy, and optical microscopy confirm the quality of the samples, and optical reflectivity demonstrates that the crystals are strongly photonic and near that needed to exhibit band gap behavior.g$M_,@_,+200$M_,@_,51800 >=@P+Iga, K//Soda H.//Kitahara C.//Suematsu Y.//+ $=nuN<,GaInAs/InP Surface Emitting Injection Lasers, $=nuN<11.2.1  $=nuN< #Japanese Journal of Applied Physics# $=nuN<1979$M_@_18$M_@_ 12$M_@_ 2329-2330 $M_@_%:\\As01mesant\Procite Databases\WCS\Articles\Iga K 1979.pdf,0=nuN 8<0=nuN<62800!;[?+Mendez, E. E. //Price, P. J. //Heiblum, M. +V=tM7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987V=tM+100$M_T!D@_<\T51890";1?Curtice, W. R. 2Rca Labs,Ctr Microwave Technol/Princeton//Nj/085402@A Mesfet Model for Use in the Design of GaAs Integrated-Circuits@09.1.1 4IEEE Transactions on Micr-~L$aser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 $h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any int$ erference effects.$M_,d@_\+98$M_,d@_\,JGan/ Ingan/ Dislocation/ Selective Growth/ Laser/ Violet/ Lifetime/ CleaveJ$M_,$ d@_\3800%==?KBrommer, K.D.//Mullaney, H.A.//Meade, R.D.//Rappe, A.M.//Joannopoulos, J.D.==@o_=@o_ =@o%_OLow-loss dielectric resonator having a lattice structure with a resonant defectO=@o_05.3=@o_ US5187461 %X=@o_+34=@o_64220&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450DtDt~2$o<@Nakamura, S. //Senoh, M. //Nagahama, S. //Iwasa, N. //Yamada, T. //Matsushita, T. //Kiyoku, H. //Sugimoto, Y. //Kozaki, T. //Umemoto, H. //Sano, M. //Chocho, K. #$=XKt<>Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima 774,Japan>#=XKt<ZHigh-Power ; Long-Lifetime Ingan/Gan/Algan-Based Laser Diodes Grown on $Pure GaN SubstratesZ#=XKt<06.5.3#=XKt< 2Japanese Journal of Applied Physics Part 2-Letters2#=XKt<$ Article$M_,d@_\ Mar 15, 1998 $M_,d@_\ 37$M_,d@_\3b$M_,d@_\ $L309-L312 $M_,d@_\%@\\As01mesant\Procite Databases\WCS\Articles\Nakamura 1996 03.pdf@*Epitaxially laterally overgrown GaN on sapphire was used to reduce the number$ of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO2 mask area surrounding the window, corresponding to the lateral o$vergrowth, was nearly free of the threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multi-quantum-well-structure l%==?KBrommer, K.D.//Mullaney, H.A.//Meade, R.D.//Rappe, A.M.//Joannopoulos, J.D.==@o_=@o_ =@o%_OLow-loss dielectric resonator having a lattice structure with a resonant defectO=@o_05.3=@o_ US5187461 hb=,t:+1408$M_t;d=@_\='8450$M_t;d=@_\='8450^N~E&;@ Ando, T.  =,t:7Tech Univ Munich,Dept Phys/D-8000 Munich 2//Fed Rep Ger7=,t:QInter-Subband Optical-Absorpti&on in Space-Charge Layers on Semiconductor SurfacesQ=,t:04.3.3=,t: )Zeitschrift Fur Physik B-Condensed Matter)&=,t: Article8$M_t;d=@_\='8268$M_t;d=@_\='838$M_t;d=@_\='8263-2728$M_t;d=&@_\='8%;\\As01mesant\Procite Databases\WCS\Articles\Ando T 1977.pdf,hb=,t:hb=,t:+1408$M_t;d=@_\='8&450';@ Fukui, H. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'=Determination of the Basic Device Parameters of a GaAs-Mesfet=09.1.1 Bell System Technical Journal Article'u1979583771-797%<\\As01mesant\Procite Databases\WCS\Articles/Fukui H 1979.pdf<+15251930(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144inear window in the {11 (2) over bar 0} direction. On the other hand, a trapezoidal structure with {1 (1) over bar 01} facets on the side and a (0001) facet on the top appears in the AlxGin the AlxGK{.^N~2,(o<@1Kato, Y.//Kitamura, S.//Hiramatsu, K.//Sawaki, N.1c=py0t;Nagoya Univ,Dept Electr,Chikusa Ku/Nagoya/Aichi 46401/Japan;c=py(0tmSelective Growth of Wurtzite GaN and Alxga1-Xn on GaN Sapphire Substrates by Metalorganic Vapor-Phase Epitaxymc=py0t06.5.2c=py(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144($M_<`t@_ll3-4$M_<`t@_ll133-140$M_<`t@_ll%@\\As01mesant\Procite Databases\WCS\Articles/Hiramats 1994 05.pdf@($M_<`t@_ll)bStates without reference that lateral transport from the masked regions is by gas-phase diffusion.b$M_<`t@_ll*The selective growth of( GaN and AlxGa1-xN (x = 0.1) by metalorganic vapor phase epitaxy has been carried out on GaN/sapphire substrates using SiO2 masks. It is found that the selectivity of GaN is good, but that of AlxGa1-x(N is relatively poor. Ridge growth occurs in the GaN selective growth on linear windows wider than 50 mu m, but does not in the AlxGa1-xN selective growth. {1 (1) over bar 01} facets appear in GaN on )s/AlxGa1-xAs .2. Low-Temperature MobilityK"=o 04.3.1"=o  (Journal of the Physical Society of Japan("=)o  Article!$M_T !D!@_<!T!1982 !$M_T !D!@_<!T!51!$M_T !D!@_<!T!12!$M_T !D!@_<!T 3893-3899$M_4@_,V430o^N~c,+X= q Article8$M_t;d=@_\=0819828$M_t;d=@_\=081138$M_t;d=@_\=081-38$M_t;d+=@_\=08124-1308$M_t;d=@_\=08%>\\As01mesant\Procite Databases\WCS\Articles\Ando T 1982 08.pdf,= q= q+B+1138$M_t;d=@_\=08490,;@Ando, T. //Mori, S.  :=uȒhUniv Tsukuba,Inst Appl Phys/Sakura/Ibaraki 30031/Japan ; Univ Tokyo,Dept Phys,Bunkyo Ku/Tokyo 113//Japanh, :=uȒElectronic-Properties of a Semiconductor Super-Lattice .1. Self-Consistent Calculation of Subband Structure and Optical-Spectra :=uȒ,04.2.1 :=uȒ (Journal of the Physical Society of Japan( :=uȒ Article$M_TD@_<T47$M,_TD@_<T5$M_TD@_<T 1518-1527 $M_TD@_<T%9\\As01mesant\Procite Databases\WCS\Articles/Ando 1979.PDF9$M_T,KD@_<T+115$M_TD@_<T500-n;[?%Ando, T. //Fowler, A. B. //Stern, F. %=ht ԫnUniv Tsukuba,Inst Appl Phys/Sakura/Ibaraki 305/Japan ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Htsof Two-Dimensional Systems -=ht ԫ-=ht ԫ%--=ht ԫ02.4.2=ht ԫ Reviews of Modern Physics=ht ԫ Articleo$M_$xz@_ z $o1982 Apr[8h-n;@%Ando, T. //Fowler, A. B. //Stern, F. %=ht ԫnUniv Tsukuba,Inst Appl Phys/Sakura/Ibaraki 305/Japan ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts-//Ny/10598n=ht ԫ0Electronic Properties of Two-Dimensional Systems -=ht ԫ-=ht ԫ%--=ht ԫ02.4.2=ht ԫ Reviews of Modern Physics=ht ԫ Articleo$M_$xz@_ z $o1982 Apr-+=ht ԫ+=ht ԫ54o$M_$xz@_ z $o2o$M_$xz@_ z $o437-672o$M_$xz@-_ z $o%>\\As01mesant\Procite Databases\WCS\Articles\Ando T 1982 04.pdf,W(hH9X-XF-+=ht ԫ+=ht ԫ+3080-1o$M_$xz@_ z $o460. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al., US33285841p =wo,-"R. Anderson et al.,'WN~,.܊(=@dEsaki, L.//Ludeke, R.//Tsu, R.p =wo,-p =wo,- p =wo,--Semiconductor Device with Super.lattice Region-p =wo,-04.3.1p =wo,-+International Business Machines Corporation+p =wo,-280070.p =wo,- US3626257 p =wo,-USp =wo,- 12/7/1971 p =wo,-7DE2014677A. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. I.B.M. Technical Disclosure Bulletin, Vol. 3, No. 4, Sept. 1960. Article entitled, ""Multiple Junction Semiconductor."p =wo,-"US3737737 US3872400 US3882533 US3893.148 US4088515 US4103312 US4137542 US4163237 US4163238 US4194935 US4198644 US4205331 US4208667 US4250515 US4257055 US4261771 US4348686 US4349796 US4378255 US4469977 US4517047 US4558336 US4561005 US4575/Calculation of Photonic Band Structures in Face-Centered-Cubic Dielectric Media`(=vyfԫ05.3.2(=vyfԫ Physical Review Letters/(=vyfԫ Article$M_l@@_5 1990 Nov 19 (=vyfԫ65$M_l@@_521/$M_l@@_5 2646-2649 $M_l@@_5%;\\Aeron\Procite Databases\WCS\Articles\Leung KM 1990 11.pdf'@/hH9XXF(1 X=q, 2Japanese Journal of Applied Physics Part ^N~d)1 rent susceptibilities are obtained, together with scaling laws as a function of photon energy. Experimental results on different GaAs/AlxGa1-xAs asymmetric quantum wells optimized for second-harmonic 1 generation and optical rectifications are given, with optical rectification coefficients more than 10(6) higher than in bulk GaAs. These asymmetric quantum wells may be considered as giant "pseudomole1 cules" optimized for large optical nonlinearities in the 8-12-mu-m range.$M_@_+104$M_@_,eElectric-Field/ Mu-M/ 2nd-Harmonic Gen1 reration/ Transitions/ Rectification/ Absorption/ Detector/ Bande$M_@_519602n;@\Andrei, E. Y. //Deville, G. //Glattli, D. C. //Williams, F. I. B. //Paris, E. //Etienne, B. \=svoCnrs,Microstruct & Microelectr Lab/F-92220 Ba2gneux//France ; Cens,Cea,Inst Rech Fondamentale,Serv Phys Solide &o=sv2Observation of a Magnetically Induced Wigner Solid2=sv202.6.3=sv Physical Review Letters=sv Article$M_td@_\t 1988 Jun 272=sv=sv60$M_td@_\t26$M_td@_\t 2765-2768 $M_td@_\t%3n;1?Andres, R. P. //Averback, R. S. //Brown, W. L. //Brus, L. E. //Goddard, W. A. //Louie, S. G. //Moscovits, M. //Peercy, P. S. //Riley, S. J. //Siegel, R. W. //Spaepen, F. //Wang, Y.3 5=8r"`Purdue Univ,Sch Chem Engn/W Lafayette//in/47907 ; Univ Illinois,Dept Mat Sci & Engn/Urbana//Il/61801 ; at&T Bell Labs/Murray Hill//Nj/07974 ; Caltech,Arth8h~,0;@Yamanishi, M. //Suemune, I.  X=q,4Hiroshima Univ,Dept Phys Electr/Hiroshima 724//Japan4 X=q,QComment on Pol0arization Dependent Momentum Matrix-Elements in Quantum Well LasersQ X=q,10.2.1 X=q, 2Japanese Journal of Applied Physics Part 02-Letters2 X=q, Article$M_tyz@_z3\1984$M_tyz@_z3\23$M_tyz@_z3\10$M_tyz@_z3\L35-L36$M_tyz@_z3\%C\\As01mesant\Procite Databases\WCS\Articles/Yamanishi M 1984 01.pdfC+143$M_tyz@_z30\519501;@Rosencher, E. //Bois, P. @B=p`j/Thomson Csf,Cent Rech Lab/F-91404 Orsay//France/@B=p`jAModel System for Optic1al Nonlinearities: Asymmetric Quantum-WellsA@B=p`j03.3.4@B=p`j@B=p`j "Physical Review B-Condensed1 Matter"@B=p`j Article$M_@_ 1991 Nov 15 $M_@_44$M_@_210$M_@_ 11315-11327 $M_@_%C\\As01mesant\Procite Databases\WCS\Articles\Rosencher E 1991 11.pdf,$M_@_2n;[?\Andrei, E. Y. //Deville, G. //Glattli, D. C. //Williams, F. I. B. //Paris, E. //Etienne, B. \=svoCnrs,Microstruct & Microelectr Lab/F-92220 Ba2Observation of a Magnetically Induced Wigner Solid2=svt4dN~ 10$M_@_ 11315-11327 $M_@_%C\\As01mesant\Procite Databases\WCS\Articles\Rosencher E 1991 11.pdf,$M_@_1$M_@_*Optical nonlinearities in asymmetric quantum wells due to resonant intersubband transitions are analyzed using a compact density-matrix approach. The la1rge dipolar matrix elements obtained in such structures are partly due to the small effective masses of the host materials and are interpreted in terms of the participation of the whole band structure1 to the optical transitions. The other origin of the large second-order susceptibilities lies in the possibility of tuning independently the potential shape and the width of asymmetric quantum wells i1n order to obtain resonances (single or double) for a given excitation wavelength. Using a model based on an infinite-barrier quantum well, we have obtained very general and tractable formulas for sec1ond-order susceptibilities at resonance. This model allows us to fix additional fundamental quantum limitations to second-order optical nonlinearities. The "best potential shapes" maximizing the diffe2gneux//France ; Cens,Cea,Inst Rech Fondamentale,Serv Phys Solide &o=sv2Observation of a Magnetically Induced Wigner Solid2=sv202.6.3=sv Physical Review Letters=sv Article$M_td@_\t 1988 Jun 272=sv=sv60$M_td@_\t26$M_td@_\t 2765-2768 $M_td@_\t%abs/Murray Hill//Nj/07974 ; Caltech,Arth^N~ d)$3 l\@_T0]l5204;@X%Arakawa, Y. //Vahala, K. //Yariv, A. %=s.Caltech/Pasadena//Ca/91125=s.>Quantum Noise and Dynamics in Q4uantum Well and Quantum Lasers>=s.10.4.3=s. Applied Physics Letters=s. Article4$M_l\@_T4l1984$M_l\@_T4l45$M_l\@_T4l9$M_l\@_T4l950-952$M_l4\@_T4l%A\\As01mesant\Procite Databases\WCS\Articles/Arakawa Y 1984 11.pdfA$M_l\@_T4l+177$M_l\@_T4l6005n;@Aoki, H. //Ando, T. =q*!oUniv Cambridge,Cavendish Lab,Madingley Rd/Cambridge Cb3 ; Univ Tsukuba,Inst Appl Phys/Sakura/Ibaraki 305/Japano5=q*!gEffect of Localization on the Hall Conductivity in the Two-Dimensional System in Strong Magnetic-Fieldsg=q*!02.5.25=q*! Solid State Communications=q*! Article$M_|@_tjB1981$M_|@_tjB385$M_|@_tjB11$M_|@_tjB 1079-1082 $M_|@_tjB%;\\As01mesant\Procite Databases\WCS\Articles/Aoki H 1981.pdf5^;8y=q*!+233$M_|@_tjB5406;1?lArakawa, Y. //Yariv, A. !=!pCaltech/Pasadena//Ca/91125!=!pMTheory of Gain, Modulation Response, and Spe 7g6&,6;@lArakawa, Y. //Yariv, A. !=!pCaltech/Pasadena//Ca/91125!=!pMTheory of Gain, Modulation Response, and Spe6ctral AlGaAs Quantum Well LasersM!=!p10.2.1!=!p #IEEE Journal of Quantum Electronics#!=!p6 Article$M_@_41985$M_@_421$M_@_410$M_@_4 1666-16746 $M_@_4%A\\As01mesant\Procite Databases\WCS\Articles/Arakawa Y 1985 10.pdfA$M_@_4+184$M_@_462067;@ %Schuurmans, M. F. H. //Thooft, G. W. %l=vB 9Philips Res Labs,Pob 80000/5600 Ja Eindhoven//Netherlands9l=vB ;7Simple Calculations of Confinement States in a Quantum Well;l=vB 03.1.2hh=vB  "Physical Review B-Condensed Matter"l7=vB  Article$M_ @_*  1985 Jun 15 $M_ @_* 31$M_ @_* 12$M_ 8;1?QAsada, M. //Adams, A. R. //Stubkjaer, K. E. //Suematsu, Y. //Itaya, Y. //Arai, S.Ql=pr,Tokyo Inst Technol,Dept Phys Electr,2-12-1 O,8l=prLThe Temperature-Dependence of the Threshold Current of GaInAsp-Inp Dh LasersLl=pr10.1.2l=pr=pr10.1.2l=pr$M_ h(XN~,49n;@DArakawa, Y. //Sakaki, H. =p02Univ Tokyo,Inst Ind Sci,Minato Ku/Tokyo 106//Japan2=p0MMultidimensional Qu9antum Well Laser and Temperature- of Its Threshold CurrentM=p010.2.1=p0 Applied Physics Letters=9p0 Articlen$M_wy@_yR0n1982n$M_wy@_yR0n40n$M_wy@_yR0n11n$M_wy@_yR0n9939-941n$M_wy@_yR0n%>\\As01mesant\Procite Databases\WCS\Articles/Arakawa Y 1980.pdf>n$M_wy@_yR0n+891n$M_wy@_yR0n9 580:ϻ;@Z6Mukai, K. //Ohtsuka, N. //Sugawara, M. //Yamazaki, S. 6=8p0EFujitsu Labs Ltd,10-1 Morinosato Wakamiya/Atsugi/Kanagawa 24301/JapanE:=8p0MSelf-Formed In0.5ga0.5as Quantum Dots on GaAs Substrates Emitting at 1.3 Mu-MM=8p010.2.3=8p0:=8p0 2Japanese Journal of Applied Physics Part 2-Letters2=8p0 Article\!$M_e!g!@_g! \! Dec 1, 1994 :\!$M_e!g!@_g! \!33\!$M_e!g!@_g! \!12a\!$M_e!g!@_g! \! L1710-L1712 \!$M_e!g!@_g! \!%?\\As01mesant\Procite D;>=5m=?fTSollner, T. C. L.//Goodhue, W. D. //Tannenwald, P. E. //Parker, C. D. //Peck, D. D. T =sܫ#Mit,Lincoln Lab/Lexington//Ma/02173# p0`N~X,<:=8p0MSelf-Formed In0.5ga0.5as Quantum Dots on GaAs Substrates Emitting at 1.3 Mu-MM=8p010.2.3=8p0:=8p0 2Japanese Journal of Applied Physics Part 2-Letters2=8p0 Article\!$M_e!g!@_g! \! Dec 1, 1994 :\!$M_e!g!@_g! \!33\!$M_e!g!@_g! \!12a\!$M_e!g!@_g! \! L1710-L1712 \!$M_e!g!@_g! \!%?\\As01mesant\Procite D:atabases\WCS\Articles/Mukai K 1994 12.pdf?\!$M_e!g!@_g! \!*We grew 1.3-mu m emitting self-formed In0.5Ga0.5As quantum dots on GaAs substrates by supplying InAs and GaAs mono:layers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In0.1Ga0.9As in the lateral direction and by GaAs perpendicular to the dots.: Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement.\!$M_e!g!@_g! \!+103\!$M_e!g!@_g! \!,pQ:uantum Dots/ 1.3-Mu-M Emission/ Diamagnetic Shifts/ Ale/ Ingaas/ Excitons/ Confinement/ Islands/ Surface/ Wellsp\!$M_e!g!@_g! \!60250;=sܫEResonant Tunneling Through Quantum Wells at Frequencies up to 2.5 ThzE =sܫ09.2.4 =sܫ Applied Physic;=sܫEResonant Tunneling Through Quantum Wells at Frequencies up to 2.5 ThzE =sܫ09.2.4 =sܫ Applied Physic8hN~ 4D;>=@fTSollner, T. C. L.//Goodhue, W. D. //Tannenwald, P. E. //Parker, C. D. //Peck, D. D. T =sܫ#Mit,Lincoln Lab/Lexington//Ma/02173# ;=sܫEResonant Tunneling Through Quantum Wells at Frequencies up to 2.5 ThzE =sܫ09.2.4 =sܫ Applied Physic;s Letters =sܫ Article3I$M_4I@_>I$ 43I19833I$M_4I@_>I$ 43I433I$M_4I@_>I$ 43I6;3I$M_4I@_>I$ 43I588-5903I$M_4I@_>I$ 43I%@\\As01mesant\Procite Databases\WCS\Articles/Sollner TCL 1983.pdf@ =sܫ+606;13I$M_4I@_>I$ 43I52070< B BMatthews, J.W.HLMatthews, J.W.HLEd.HLEpitaxial Growth<HLNew YorkHLp|AcademicHLp|1975HLp|559<*HLp|66760=;@"Sutherland, J. E. //Hauser, J. R. "#=0p'N Carolina State Univ/Raleigh//Nc/27607'#=0pFComputer-Analysis of =Heterojunction and Graded Composition Solar-CellsF#=0p11.3.6#=0p %IEEE Transactions on Electron Devices%#:Fan, S.//Villeneuve, P.R.//Meade, R.D.//Joannopoulos, J.D.:(=tb6IThree-dimensional periodic dielectric structures having photonic bandgapsI)Y'WN~ <L==0p Article$M_D-|.@_t. 1977$M_D-|.@_t. 24$M_D-|.@_t. 4$M_D-|.@_t. =363-372$M_D-|.@_t. %B\\As01mesant\Procite Databases\WCS\Articles/Sutherland JE 1977.pdfB$M_D-|.@_t. +108$M_D-|.@_t.= 51990>G==?:Fan, S.//Villeneuve, P.R.//Meade, R.D.//Joannopoulos, J.D.:(=tb6IThree-dimensional periodic dielectric structures having photonic bandgapsI>(=tb605.3X=tb6+24(=tb664230?;@Bauer, G. E. W. //Ando, T. =oP-|Philips Res Labs,Post Box 80000/5600 Ja Eindhoven//Netherlands ; Univ Tokyo,Inst Solid State Phys,Minato Ku/To?kyo 106//Japan|=oP-Exciton Mixing in Quantum Wells=oP-03.1.5/=oP- "Physical Review B-Co?ndensed Matter"=oP- Article$M_@_Z# 1988 Sep 15 $M_@_Z#38$M_@_Z#?9$M_@_Z# 6015-6030 $M_@_Z#%A\\As01mesant\Procite Databases\WCS\Articles\Bauer GEW 1988 09.pdf,$M_@_?dZ#$M_@_Z#+177$M_@_Z#730^$M_Dg4i@_,i D^12^$M_Dg4i@_,i D^ L2112-L2114 ^$M_Dg4i@_,i D^%:\\Aeron\Procite Databases\WCS\Articles/AmZ#730k+ dDT@h.=@"3Amano, H. //Kito, M. //Hiramatsu, K. //Akasaki, I. 3x=ȼs<2Nagoya Univ,Dept Electr,Furo Cho,Chikusa Ku/Nagoya2x=ȼs<@[P-Type Conduction in Mg-Doped GaN Treated With Low-Energy Electron-Beam Irradiation (Leebi)[x=ȼs<)01.5.4 Hydrogen Complexes and Passivation)x@=ȼs< 2Japanese Journal of Applied Physics Part 2-Letters2x=ȼs< Article^$M_Dg4i@_,i D^1989^$M_Dg4i@@_,i D^28^$M_Dg4i@_,i D^12^$M_Dg4i@_,i D^ L2112-L2114 ^$M_Dg4i@_,i D^%?\\As01mesant\Procite Databases\WCS\Articl@ues/Amano H 1989 12.pdf?x=ȼs<+579^$M_Dg4i@_,i D^290A| =@!Chang, Y. C. //Schulman, J. N. X-=+tܫUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Hawaii,Dept PAhys & Astron/Honolulu//Hi/96822X-=+tܫWModification of Optical-Properties of GaAs-Ga1-xAlxAs Super-Lattices Due to Band MixingWX-=+tܫA04.2.1X-=+tܫ Applied Physics LettersX-=+tܫ Articlel$M_ԇ @_ |j1983l$M_ԇ A@_ |j43l$M_ԇ @_ |j6l$M_ԇ @_ |j536-538l$M_ԇ @_ |j%@\\As01mesant\Procite Databases\WCS\Articles/CAshang YC 1983 09.pdf@8 =+tܫ+114l$M_ԇ @_ |j8450linois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/6180 ;kN~L,B;@*-Masselink, W. T. //Chang, Y. C. //Morkoc, H. -}=xDuUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/6180B1 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801}=xDu>Binding-Energies of Acceptors in GaAs-AlxGa1-xAs Quantum WellsB>}=xDu03.1.5$=xDu "Physical Review B-Condensed Matter"}=xDu Article$M_TDB@_<T 1983 Dec 15 $M_TD@_<T28$M_TD@_<T12$M_TD@_<T 7373-7376 $M_TD@B_<T%D\\As01mesant\Procite Databases\WCS\Articles\Masselink WT 1983 12.pdf,$M_TD@_<T$M_TD@_<T+119$M_TD@_<BT52010C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170 Physics C-Solid State Phys"$"16700x8N~dlE>=@ LGlass, A. M. //Johnson, A. M. //Olson, D. H. //Simpson, W. //Ballman, A. A. L At&T Bell Labs/Holmdel//Nj/07733 N4-Wave Mixing in Semi-Insulating InP and GaAs Using the PhotorEefractive EffectN05.1.3 Applied Physics Letters Article19844410948-950%@\\As01mesant\Procite Databases\WCS\Articles/Glass AM 1984 05.pdf@8w-=0nEb+1243230F;@HBryant, G. W. x=vTLMcdonnell Douglas Corp,Mcdonnell Douglas Res Labs,Pob 516/St Louis//Mo/63166Lx=vTFExciFtons in Quantum Boxes: Correlation-Effects and Quantum ConfinementFx=vT03.5.3x=vT "Physical Review B-Condensed Matter"Fx=vT Articley$M_t@_l*gy 1988 May 15 y$M_t@_l*gy37y$M_t@_l*gy15y$FM_t@_l*gy 8763-8772 y$M_t@_l*gy%A\\As01mesant\Procite Databases\WCS\Articles\Bryant GW 1988 05.pdf,y$M_t@_l*gyy$MFQ_t@_l*gy+154y$M_t@_l*gy52040G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6 <lCs,\Dal calculations have been made of the rates of scattering and momentum relaxation of electrons caused by unscreened polar optical phonons in quasi-two-dimensional layers, using a simple infinite-depthD square-well model. The results are compared with approximate analytic formulae, and with the situation in the bulk. Some of the major differences from scattering in the bulk are (i) an abrupt threshoDld for phonon emission appears, (ii) rates just above threshold are enhanced and (iii) the scattering just above the threshold of emission is more isotropic. These differences are intimately related tDo the energy dependence of the density of states and to the polar interaction, and are expected to be largely independent of the model. The form of the polar interaction strongly favours intra-sub-banDd scattering over inter-sub-band scattering and this effect has consequences for the luminescent spectrum expected from hot injected carriers. The large increase of the momentum relaxation rate at theD emission threshold has consequences for transport phenomena ,arialM_TD@_<T rialM_TD@_<T+134rialM_TD@_<T52030E>=1? LGlass, A. M. //Johnson, A. M. //Olson, D. H. //Simpson, W. //Ballman, A. A. L At&T Bell Labs/Holmdel//Nj/07733 N4-Wave Mixing in Semi-Insulating InP and GaAs Using the PhotorE+1243230F;1?HBryant, G. W. x=vTLMcdonnell Douglas Corp,Mcdonnell Douglas Res Labs,Pob 516/St Louis//Mo/63166Lx=vTFExciFtons in Quantum Boxes: Correlation-Effects and Quantum ConfinementFx=vT03.5.3x=vT "Physical Review B-Condensed Matter"  (Journal of Physics C-Solid State Physics(=Pp0~N~\tG;@R Babiker, M.  =Pp0 5Univ Essex,Dept Phys/Colchester Co4 3sq/Essex/England5=Pp0 ?Longitudinal Polar Optical MoGdes in Semiconductor Quantum-Wells?=Pp0 03.2.1=Pp0  (Journal of Physics C-Solid State Physics(=Pp0G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6G97$M_'t)@_l)8%>\\As01mesant\Procite Databases\WCS\Articles/Babiker M 1986.pdf>$M_'t)@_l)8*GA continuum theory is employed for investigatingG the longitudinal optical (LO) modes in polar semiconductor heterostructures. Particular emphasis is laid on the symmetric double heterostructure (DHS) such as occurs in a semiconductor quantum well. GThe existence of two-dimensional (2D) bulk-type double-interface-type and guided-type LO modes is examined for this case and their characteristic dispersion relations derived. It is shown with referenHS>t=?Yonenaga, I//Sumino Kxk=s xk=s XImpurity Effects on the Generation, Velocity, and Immobilization of DislocatioHns in GaAsxk=s Wxk=s 07.1.6=s  Journal of Applied Physics=s H1989:$M_D=4?@_,?:65:$M_D=4?@_,?:1:$M_D=4?@_,?:85-92:$M_D=4?@_,?:%=\\Aeron$M_D=4?@_,?:1:$M_D=4?@_,?:85-92:$M_D=4?@_,?:%=\\Aeron^N~l|Gce to a typical GaAs quantum well that the presence of at most two double-interface modes and a finite number of guided LO modes depends on the difference between the squares of the limiting bulk LO fGrequencies of the two materials. The implications of the results for light scattering experiments and for the properties of electrons confined in quantum wells are pointed out and discussed FG~arialM_'t)@_l)8 rialM_'t)@_l)8+155rialM_'t)@_l)852050HS>@Yonenaga, I//Sumino Kxk=s xk=s XImpurity Effects on the Generation, Velocity, and Immobilization of DislocatioHns in GaAsxk=s Wxk=s 07.1.6=s  Journal of Applied Physics=s H1989:$M_D=4?@_,?:65:$M_D=4?@_,?:1:$M_D=4?@_,?:85-92:$M_D=4?@_,?:%B\\As01mHesant\Procite Databases\WCS\Articles\Yonenaga I 1989 01.pdfB:$M_D=4?@_,?:' 0021-8979 :$M_D=4?@_,?:)\English Tohoku, Inst Mat Res, Sendal, Miyagi 9H80, Japan, R4706 Copyright 2003 SciSearch Plus xk=s xk=s xk=s xk=s H xk=s xk=s  xk=s xk=s xk=s %I;1? DBrunner, K. //Abstreiter, G. //Bohm, G. //Trankle, G. //Weimann, G. D<= osB-Tech Univ Munich,Walter Schottky Inst/D-85748-<=Dt4t,H xk=s xk=s  xk=s xk=s xk=s %HTxk=s +84:$M_D=4?@_,?:64540I;@ DBrunner, K. //Abstreiter, G. //Bohm, G. //Trankle, G. //Weimann, G. D<= osB-Tech Univ Munich,Walter Schottky Inst/D-85748-<=I osBnSharp-Line Photoluminescence and 2-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structuren<= osB03.5.3)I= osB Physical Review Letters<= osB Articlem$M_|vlx@_dxx}|m Aug 22, 1994 m$M_|vlx@_dxx}|m73Im$M_|vlx@_dxx}|m8m$M_|vlx@_dxx}|m 1138-1141 m$M_|vlx@_dxx}|m%A\\As01mesant\Procite Databases\WCS\Articles\Brunner K 1994 08.pdfI,m$M_|vlx@_dxx}|mm$M_|vlx@_dxx}|m*Using a micron-sized photoluminescence (PL) probe enables us to study single islandlike interface defects of a thin GaAIs/AlGaAs quantum well. The bound exciton ground state locally emits a distinct sharp line. With increasing excitation of this quantum dot level additional transition lines emerge at lower energy. TheyI are attributed to localized biexciton states. The biexciton correlation energy is about 4 meV. A distinct two-photon resonant absorption peak of the biexciton ground state is observed in PL excitatioJp<Ү1?('Karpinski, J. //Jun, J. //Porowski, S. '(=Vt;High Pressure Res Ctr Unipress,Sokolowska 29/Warsaw//Poland;(=Vt==h=wv PhysiJz :,K;@*bBrunner, K. //Bockelmann, U. //Abstreiter, G. //Walther, M. //Bohm, G. //Trankle, G.//Weimann, G. b==h=wv,Tech Univ Munich,Walter Schottky Inst/WK-8046,==h=wv7Photoluminescence From a Single GaAs/AlGaAs Quantum Dot7==h=wv03.5.5==h=wv PhysiKcal Review Letters==h=wv Article$M_@_ Nov 30, 1992 $M_@_69$M_@_K22$M_@_ 3216-3219 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles\Brunner K 1992 11.pdf,$M_K@_$M_@_*Isolated single quantum dots of different size have been fabricated by laser-induced local interdiffusion of a GaAs/AlGaAs quantum-well structurKe. Microscopic photoluminescence (PL) reveals a splitting and a blueshift, which depend systematically on dot size. The distinct PL peaks separated in energy by up to 10 meV are attributed to recombinL[l41984 October 154$M_l=\?@_T?>[l4304$M_l=\?@_T?>[l484$M_l=\?@_T?>[l4 4481-4492 4$M_l=\?@_TL?>[l4324$M_l=\?@_T?>[l4%?\\As01mesant\Procite Databases\WCS\Articles\Chand N 1984 10.pdf?4$M_l=\?@_T?>[l4+3144$M_l=\?@_T?L>[l460580M Index-Guided Diode-Lasers;= t:10.3.3= t: Applied Physics Letters= t: ArticleM Index-Guided Diode-Lasers;= t:10.3.3= t: Applied Physics Letters= t: Article>$T,N  @_ T216$M_  @_ T1-2$M_  @_ T222-248$M_  @_ T%<\\As01mesant\Procite Databases\WCNS\Articles/Cohen E 1989.pdf,$M_  @_ T$M_  @_ T+133$M_  @_ T890Oh.=@h=1?)Singh, J. //Bajaj, K. K. //Chaudhuri, S. )HL-=0nV Universal Energy Syst Inc/Dayton//Oh/45432 ; Usaf,Wright Aeronaut Labs,Aadr,Avion Lab/Wright PatRterson ; Wright State Univ,Univ Res Ctr/Dayton//Oh/45435HL-=0nV \Theory of Photoluminescence Line-Shape Due to Interfacial Quality in Quantum Well Structures\RHL-=0nV 03.1.2HL-=0nV  Applied Physics LettersHL-=0nV  Article$M_l\@_T0 lR1984$M_l\@_T0 l44$M_l\@_T0 l8$M_l\@_T0 l805-807$M_l\@_T0 l%:\\Aeron\ProcitT0 l805-807$M_l\@_T0 l%:\\Aeron\Procit^N~eSociated with the absorption of polar optical phonons, on the other hand, proves to be proportional to L. These properties are shown to lead to a negative differential resistance for pure polar mode scSattering, and to the existence of a runaway field for deformation-potential scattering. The self-energy associated with the emission of polar optical phonons at absolute zero is shown to be divergent S unless the polar interaction is screened, and some consequences of this for laser and other optical processes are pointed out. The description of scattering by perturbation theory breaks down in very S narrow wells arial@_TD@_< T rial@_TD@_< T+284rial@_TD@_< T52080T==1?Chai, Bruce H.T.HFOptical CrystalsHF00.0HFHFTinHFWeber, Marvin J.HFEd.HF,CRC Handbook of Laser ScienTce and Technology,HF Boca Raton HF  CRC Press HF 1995HF =X@tV#357270=X@tV# US3590248 =X@tV#US=X@tV# 6/29/1971 U=X@tV# US3590248 =X@tV#wUS3187627 US3289101 US3391281 US1780364 US2967910 US3043179 US3248669 US3284722 US3290539 US3294903 US3310681 US3349174%U~2 -S;@pRidley, B. K. 8=n$ |5Univ Essex,Dept Phys/Colchester Co4 3sq/Essex/England58=n$ |\The Electron Phonon InteracStion in Quasi-2-Dimensional Semiconductor Quantum-Well Structures\8=n$ |03.2.18=n$ | (Journal of Physics C-Solid State PhysicsS(8=n$ | Article@_TD@_< T1982@_TD@_< T15@_TD@_< T28@S_TD@_< T 5899-5917 @_TD@_< T%>\\As01mesant\Procite Databases\WCS\Articles/Ridley BK 1982.pdf>=n$ |*Approximate anSalytic expressions are obtained for the scattering rates and momentum-relaxation rates of an electron in a quasi-two-dimensional quantum well interacting with acoustic, optical and intervalley modes vSia the deformation potential and with longitudinal optical modes via the polar interaction. These analytic expressions are obtained using a momentum-conservation approximation. The threshold for opticSal phonon emission, unlike the case in the bulk, is abrupt. All scattering rates are energy-independent and are inversely proportional to L, the thickness of the well. The momentum-relaxation rate assTinHFWeber, Marvin J.HFEd.HF,CRC Handbook of Laser ScienTce and Technology,HF Boca Raton HF  CRC Press HF 1995HF 91281 US1780364 US2967910 US3043179 US3248669 US3284722 US3290539 US3294903 US3310681 US3349174^N~T!Supplement II: Optical Materials!HF %NoneHF 64240U<@ Chatterton, Jr.//Edward J.=X@tV# Laser Arrays=X@tV# =X@tV#12.5.4U=X@tV#357270=X@tV# US3590248 =X@tV#US=X@tV# 6/29/1971 U=X@tV# US3590248 =X@tV#wUS3187627 US3289101 US3391281 US1780364 US2967910 US3043179 US3248669 US3284722 US3290539 US3294903 US3310681 US3349174Uw=X@tV#"US3691390 US3691483 US3838278 US3845293 US3849604 US3892468 US4062043 US4229103 US5734672 US5898211 US6144684 US6272164 US3715685 US3751166 US3953727 US399U1318 US4454602 US4625305 US5013151 US5319528 US5325384 US5394492 US5463534 US5513195 US5521931 US5586132 US5913108 US5923359 US6310900 US3819249 US3832028 US3897135 US3901578 US4232385 US4367554 US477U0482 US4932747 US5625403 US5729568 US5985684 USRE29094=X@tV#%;\\As01mesant\Procite Databases\WCS\Patents\US03590248__.pdf;=X@tV#'HUd04B 9/0=X@tV#+41=X@tV#10Vnd at GaAs/AlGaAs Heterojunctions and Quantum Wells==uj02.3.1=uj (Journal of the Physical Society of Japan(Vnd at GaAs/AlGaAs Heterojunctions and Quantum Wells==uj02.3.1=uj (Journal of the Physical Society of Japan(=o=oq US3611069 =oEu-V;@ Ando, T.  =ujKUniv Tokyo,Inst Solid State Phys,7-22-1 Roppongi,Minato Ku/Tokyo 106//JapanK=uj=Hole SubbaVnd at GaAs/AlGaAs Heterojunctions and Quantum Wells==uj02.3.1=uj (Journal of the Physical Society of Japan(V=uj Article$M_<,@_$<1985$M_<,@_$<54$M_<,@_$<4$M_<,@_$V< 1528-1536 $M_<,@_$<%>\\As01mesant\Procite Databases\WCS\Articles/Ando T 1984 12.pdf>$M_<,@_$<+117$M_<,@V_$<52150W<@6Galginaitis, Simeon V.//Fenner, G. E.//Ehle, Rogers S.!=oq=oq=oqMultiplWe Color Emitting Diodes=oq11.1.1=oq218550=oq US3611069 =oX;u=?bFritz, I. J. //Picraux, S. T. //Dawson, L. R. //Drummond, T. J. //Laidig, W. D. //Anderson, N. G. b/=(vDԫPSandia Natl Labs/Albuquerque//Nm/87185 X; N Carolina State Univ,Dept Elect & CompP/=(vDԫaDependence of Critical Layer Thickness on Strain for InxGa1-xAs/GaAs Strained-Layer Superlatticesa/X=(vDԫ07.2.2/=(vDԫ Applied Physics Letters/=(vDԫ Articles$M_d|T~@_L~ds 1985 May 15} =mN~T--W=oq' H01L 15/0 =oq+31=oq30X;@bFritz, I. J. //Picraux, S. T. //Dawson, L. R. //Drummond, T. J. //Laidig, W. D. //Anderson, N. G. b/=(vDԫPSandia Natl Labs/Albuquerque//Nm/87185 X; N Carolina State Univ,Dept Elect & CompP/=(vDԫaDependence of Critical Layer Thickness on Strain for InxGa1-xAs/GaAs Strained-Layer Superlatticesa/X=(vDԫ07.2.2/=(vDԫ Applied Physics Letters/=(vDԫ Articles$M_d|T~@_L~ds 1985 May 15X M=(vDԫ46s$M_d|T~@_L~ds10s$M_d|T~@_L~ds967-969s$M_d|T~@_L~ds%@\\As01mesant\ProcXite Databases\WCS\Articles\Fritz IJ 1985 05.pdf,XhH9XXXFXM=(vDԫ+168s$M_d|T~@_L~ds960Yons&=SoF4 Article7$M_@B@_AP4719837$M_@B@_AP47457$M_@B@_AP4797Yons&=SoF4 Article7$M_@B@_AP4719837$M_@B@_AP47457$M_@B@_AP4797Yons&=SoF4 Article7$M_@B@_AP4719837$M_@B@_AP47457$M_@B@_AP4797 Article$M_@_&198$M_@_&198N>nBr -Z7$M_@_&141$M_@_&1$M_@_&129-150$M_@_&%>\\As01mesant\ProZcite Databases\WCS\Articles/Wendler L 1987.pdf,$M_@_&$M_@_&+108$M_@_&52160[,(<@Thomas, D.J.//Hopfield, J.J.a=(oK<#Isoelectronic Traps Due to N in GaP#a=(oK<01.4.4 Excitonsa[=(oK< Physical Reviewa=(oK<1966 10$M_l\@_T6K150$M_l\@_T6K680-689[$M_l\@_T6K$M_l\@_T6K%A\\As01mesant\Procite Databases\WCS\Articles/Thomas DG 1966 10.pdfA$M_l\@_T6K61660\Q=1?00.1HFTufte, Edward R.HF.The Visual Display of Quantitative Information.HF\Cheshire, ConnecticutHF Graphics PressHF 1983HF %NoneH\F )From Edward Tufte's course in July 28, 2003. Basically, the power of visual representations (beyond what text can do) is to show quantitative relationships between thin\gs, whether in space, time, cause/effect, or any other quantitative dimension. In a way, it's the same thing that mathematical equations do (again beyond what text can do). Rules for good presentatio<l;k$-\ns: 1 Be early, 2 At beginning Problem Relevance Solution, 3 Particular-General-Particular, 4 Leave a piece of paper, 5 Don't present as if your audience is stupid, 7 Respect your audience, 8 Use hum\our wisely, 10 Be appropriately expressive, 11 Finish early. Bell Centennial Font great for high-density numbers Content should drive Form, not the other way aroundHF \64250]%| =@V4Miyazawa, S. //Ishii, Y. //Ishida, S. //Nanishi, Y. 41-=sܫ4Nippon Telegraph & Tel Publ Corp,Atsugi Elect Commun41-=s]ܫYDirect Observation of Dislocation Effects on Threshold of a GaAs Field-Effect TransistorY1-=sܫ09.1.11-=sܫ Applied P]hysics Letters1-=sܫ ArticleYI$M_ bIcI@_cI YI1983YI$M_ bIcI@_cI YI43YI$M_ bIcI@_cI YI9]YI$M_ bIcI@_cI YI853-855YI$M_ bIcI@_cI YI%B\\As01mesant\Procite Databases\WCS\Articles/Miyazawa S 1983 11.pdfBYI$M_ bIcI@_cI YI]8+123YI$M_ bIcI@_cI YI22170^unications=r Articleh$M_|qls@_ds6 |h1978h$M_|qls@_ds6 |h26h$M_|qls@_ds6 |h8^unications=r Articleh$M_|qls@_ds6 |h1978h$M_|qls@_ds6 |h26h$M_|qls@_ds6 |h8^unications=r Articleh$M_|qls@_ds6 |h1978h$M_|qls@_ds6 |h26h$M_|qls@_ds6 |h8E5e $-_ Inst Nachrichtentech Berlin Gmbh/D-1000 ; Forschungsinst Deutschen Bundespost,FernmeldetechH=(tfTLocalization Induced Electron-Hole Transition Rate Enhancement i_n GaAs Quantum WellsTH=(tf03.3.1H=(tf Applied Physics LettersH=(tf Article!$_M_!!@_!R!1984!$M_!!@_!R!44!$M_!!@_!R!1!$M_!!@_!R!84-86!$M_!!@__!R!%B\\As01mesant\Procite Databases\WCS\Articles/Christen J 1983 01.PDFB!$M_!!@_!R!+108!$M_!!@_!R!4460`\| =@ ATiong, K. K. //Amirtharaj, P. M. //Pollak, F. H. //Aspnes, D. E. AU-=s ܫYCuny Brooklyn Coll,Dept Phys/Brooklyn//Ny/11210 ; Bell Tel Labs Inc/Murr`ay Hill//Nj/07974YU-=s ܫ[Effects of as+ Ion-Implantation on the Raman-Spectra of Spatial Correlation Interpretation[U-=s ܫ05.1.3`U-=s ܫ Applied Physics LettersU-=s ܫ Article I$M_ )I*I@_*I I1984 I$M_ )I*I@_*I ` I44 I$M_ )I*I@_*I I1 I$M_ )I*I@_*I I122-124 I$M_ )I*I@_*I I%@\\As01mesant\Procite Databases\WCS\Articles/Tiong KK 19`i84 01.pdf@ I$M_ )I*I@_*I I+202 I$M_ )I*I@_*I I3850ah.=[?Aoki, H. //Ando, T. S=sBYUniv Tokyo,Dept Phys/Tokyo 113//Japan ; Univ Tokyo,Inst Solid State Phys/Tokyo 106//JapanYS=st4~ ah.=@Aoki, H. //Ando, T. S=sBYUniv Tokyo,Dept Phys/Tokyo 113//Japan ; Univ Tokyo,Inst Solid State Phys/Tokyo 106//JapanYS=saB:Critical Localization in 2-Dimensional Landau Quantization:S=sB02.5.2`R=sB Physical Review LettersaS=sB Article$M_\L@_DT\ 1985 Feb 25 $M_\L@_DT\54$M_\L@_DT\8$M_\aL@_DT\831-834$M_\L@_DT\%>\\As01mesant\Procite Databases\WCS\Articles\Aoki H 1985 02.pdf>$M_\L@_DT\+128$M_\aL@_DT\530b;@`&Kishino, K. //Aoki, S. //Suematsu, Y. &8=0w4Tokyo Inst Technol,Dept Phys Electr/Tokyo 152//Japan48=0wnWaveblength Variation of 1.6 Mu-M Wavelength Buried Heterostructure GaInAsp InP Lasers Due to Direct Modulationn8=0w10.5.18=0w #IEbEE Journal of Quantum Electronics#8=0w Articley$M_L<@_4 Ly1982y$M_L<@_4 Ly18y$M_L<b@_4 Ly3y$M_L<@_4 Ly343-351y$M_L<@_4 Ly%A\\As01mesant\Procite Databases\WCS\Articles/Kishino K 1982 03.pdfAy$M_L\\As01mesant\Procite Databases\WCS\Articles\Ledentsov 1996.pdf>$M_ @_`h*1Elastic relaxation on facet edges, renormalization of the surface energy of the facets, and interaction between islands via the strained substrate are the driving forces for self-organization hof ordered arrays of uniform coherent three-dimensional islands on crystal surfaces. For a (100) surface of a cubic crystal, two-dimensional square lattice of pyramid-like islands (quantum dots) with hthe periodicity along the directions of the lowest stiffness [010] and [001] has the minimum energy among different one-dimensional and two-dimensional arrays. For the InAs/GaAs(100) system, an equilih brium array of dots of the lateral size similar to 120-140 Angstrom exists in a fixed range of growth parameters. The main luminescence peak at 1.1 eV, as well as peaks of excited states coincide bl eh nergy with the peaks revealed in the calorimetric absorption spectra regardless of the amount of InAs deposited (2-5 ML). Raman spectra indicate significant strain in InAs dots. The ''phonon bottleneci;.u=?ALedentsov, N. N. //Shchukin, V. A. //Grundmann, M. //Kirstaedter, N. //Bohrer, J. //Schmidt, O. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Za^N~: g;@,Dahmani, B. //Hollberg, L. //Drullinger, R. ,=rPHNbs/Boulder//Co/80303=rPHLFrequency Stabilization of Segmiconductor-Lasers by Resonant Optical FeedbackL=rPH10.4.1=rPH Optics Letters=rPH Artigcler$M_l{\}@_T}Hlr1987r$M_l{\}@_T}Hlr12r$M_l{\}@_T}Hlr11r$M_l{\}@_T}Hlr876-878gr$M_l{\}@_T}Hlr%>\\As01mesant\Procite Databases\WCS\Articles/Dahmani B 1987.pdf>=rPH+200r$M_l{\}@_T}Hlr52190h;@'Ledentsov, N. N. //Grundmann, M. //Kirstaedter, N. //Schmidt, O. //Heitz, R. //Bohrer, J. //Bimberg, D. //Ustinov, V. M. //Shchukin, V. A. //Egorov, A. Y. //Zhukov, A. E. //Zaitshev, S. //Kopev, P. S. //Alferov, Z. I. //Ruvimov, S. S. //Kosogov, A. O. //Werner, P. //Gosele, U. //Heydenreich, J. '!=X|vhTech Univ Berlin,Inst Festkorperphys,Harhdenbergstr 36,D- ; Af Ioffe Phys Tech Inst,St Petersburg 194021,Russia ; Max Planck Inst Mikrostrukturphys,D-06120 Halle,Germany!=X|vh[Ordered Arrays of Quantum Doths: Formation, Electronic Spectra, Relaxation Phenomena, Lasing[!=X|vh10.2.3P"=X|vhP"=X|vh Solid-Sti;.u=?ALedentsov, N. N. //Shchukin, V. A. //Grundmann, M. //Kirstaedter, N. //Bohrer, J. //Schmidt, O. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Za4 1996 SEP 15 $M_4$@_E4E4VF~,-4-i;@ALedentsov, N. N. //Shchukin, V. A. //Grundmann, M. //Kirstaedter, N. //Bohrer, J. //Schmidt, O. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Zaiitsev, S. V. //Gordeev, N. Y. //Alferov, Z. I. //Borovkov, A. I. //Kosogov, A. O. //Ruvimov, S. S. //Werner, P. //Gosele, U. //Heydenreich, J. A e=s.Tech Univ Berliin,Inst Festkorperphys,Hardenbergstr 36,D- ; Af Ioffe Phys Tech Inst,St Petersburg 194021,Russia ; Tech Univ St Petersburg,St Petersburg 195251,Russia ; Max Planck Inst Mikrostrukturphys,D-06120 Hallei,Germany e=s.PDirect Formation of Vertically Coupled Quantum Dots in Stranski-Krastanow GrowthP e=s.07.4.3vi=s. "Physical Review B-Condensed Matter" e=s. Article$M_4$@_E4 1996 SEP 15 $M_4$@_E4i54$M_4$@_E412$M_4$@_E4 8743-8750 $M_4$@_E4%A\\As01mesant\Procite Databases\WCS\Articles\Ledentsov i1996 09.pdfA$M_4$@_E4*xAlternate short-period GaAs-InAs deposition following InAs pyramid formation on a GaAs (100) surface leads to the creation of vertically split pj R=&1?00.1HFTufte, Edward R.HFEnvisioning InformationHFCheshirej, ConnecticutHF Graphics PressHF 1990HF %NoneHF j64260u^N~ 4-,k;@Mori, S. //Ando, T. %=Juf 0hUniv Tokyo,Dept Phys,Bunkyo Ku/Tokyo 113//Japan ; Univ Tsukuba,Inst Appl Phys/Sakura/Ibaraki 30031/Japanhk%=Juf 0oElectronic-Properties of a Semiconductor Super-Lattice .2. Low-Temperature Mobility Perpendicular to the Super-o%=Juf 004.3.1k%=Juf 0 (Journal of the Physical Society of Japan(%=Juf 0 ArticleN$M_NN@_N N1980 02N$M_NNk@_N N48N$M_NN@_N N3N$M_NN@_N N865-873N$M_NN@_N N%;\\As01mesant\Procite Databases\WCS\Articles/Mknori S 1980.pdf;N$M_NN@_N N+159N$M_NN@_N N1310lp<@@ 2Amano, H. //Sawaki, N. //Akasaki, I. //Toyoda, Y. 2Pn=kulNagoya Univ,Sch Engn,Dept Electr/Nagoya/Aichi 464/Japan ; Matsushita Elect Ind Co Ltd,Klawasaki Lab,Tama Ku/Kawasaki/Kanagawa 214/JapanPn=kul^Metalorganic Vapor-Phase Epitaxial-Growth of a High-Quality GaN Film Using an AlN Buffer Layer^Pnl=kul07.5.3Pn=kul Applied Physics LettersPn=kul Article$M_@_ 1986 Febl 3$M_@_$M_@_ 48$M_@_5$M_@_353-355$M_m;1?PDNorris, T. //Rhee, J. K. //Sung, C. Y. //Arakawa, Y. //Nishioka, M. D6=n0Univ Michigan,Ctr Ultrafast Opt Sci,2200 Bonisteel Blvd/Ann ; Univ T4dN~x$4l@_%<\\As01mesant\Procite Databases\WCS\Articles/Amano H 1986.pdf<$M_@_+538$M_@_2880m;@PDNorris, T. //Rhee, J. K. //Sung, C. Y. //Arakawa, Y. //Nishioka, M. D6=n0Univ Michigan,Ctr Ultrafast Opt Sci,2200 Bonisteel Blvd/Ann ; Univ Tmokyo,Inst Ind Sci,Minato Ku/Tokyo 153//Japan ; Thomson Csf,Cent Rech Lab/F-91404 Orsay//France6=n0MTime-Resolved Vacuum Rabi Oscillations in a Semiconductor Quantmum MicrocavityM6=n005.2.36=n0 "Physical Review B-Condensed Matter"6=n0 Articlem$M_l\@_T6,l 1994 Nov 15 $M_l\@_T6,l50$M_l\@_T6,l19$M_l\@_T6,l 14663-14666 m$M_l\@_T6,l%A\\As01mesant\Procite Databases\WCS\Articles\Norris TB 1994 11.pdf,$M_l\@_T6,l$M_l\@_T6,l+104$M_lm\@_T6,l,NSpontaneous-Emission/ Wells/ Scattering/ Linewidth/ Cavity/ States/ Atoms/ GapN$M_l\@_T6,l1360nD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsnD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsnD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsHx 9i,<no;@VKirstaedter, N. //Ledentsov, N. N. //Grundmann, M. //Bimberg, D. //Ruvimov, S. S. //Maximov, M. V. //Kopev, P. S. //Alferov, Z. I. //Richter, U. //Werner, P. //Gosele, U. //Heydenrneich, J. =u(Tech Univ Berlin,Inst Festkorperphys,Hardenbergstr 36/D- ; Af Ioffe Phys Tech Inst/St Petersburg 194021//Russia ; Max Planck Inst Mikrostrukturphys/nD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsnL=u(10.2.3=u( Electronics Letters=u( Articleu$M_l~\@_Tlun Aug 18, 1994 u$M_l~\@_Tlu30u$M_l~\@_Tlu17u$M_l~\@_Tlu 1416-1417 u$M_l~\@_Tlu%E\\oh.=1?HAkasaki, I. //Sota, S. //Sakai, H. //Tanaka, T. //Koike, M. //Amano, H. H+=u(Meijo Univ,Dept Elect & Electr Engn,Tempaku Ku,1-501 ; Pioneer Eolect Corp,Tsuruga,Saitama 35002,Japan ; Toyoda Gosei Co Ltd,Haruhi,Aichi 452,Japan+=u(-Shortest Wavelength Semiconductor Laser Diode-+=u(o10.1.2+=u(+=u(+=u( Electronics Letters+=u( oArticleu$M_l~\@_T lu Jun 6, 1996 u$M_l~\@_T lu32u$M_l~\@_T lu12u$M_l~\@_T lu 1105-1^N~24<-nAs01mesant\Procite Databases\WCS\Articles\Kirstaedter N 1994 08.pdfEu$M_l~\@_Tlu*Low threshold, large T-o injection laser emission via zero-dimensional states in (InGa)Ans quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.nu$M_l~\@_Tlu+285u$M_l~\@_Tlu,DSemiconductor Junction Lasers/ Semiconductor Quantum Islands/ GrowthDu$M_l~\@_Tlu1110oh.=@HAkasaki, I. //Sota, S. //Sakai, H. //Tanaka, T. //Koike, M. //Amano, H. H+=u(Meijo Univ,Dept Elect & Electr Engn,Tempaku Ku,1-501 ; Pioneer Eolect Corp,Tsuruga,Saitama 35002,Japan ; Toyoda Gosei Co Ltd,Haruhi,Aichi 452,Japan+=u(-Shortest Wavelength Semiconductor Laser Diode-+=u(o10.1.2+=u(+=u(+=u( Electronics Letters+=u( oArticleu$M_l~\@_T lu Jun 6, 1996 u$M_l~\@_T lu32u$M_l~\@_T lu12u$M_l~\@_T lu 1105-1o106 u$M_l~\@_T lu%B\\As01mesant\Procite Databases\WCS\Articles/Akasaki I 1996 006.pdfBu$M_l~\@_T lu*9A group III, nitride based, separate confinp;g1?COudar, J. L. //Migus, A. //Hulin, D. //Grillon, G. //Etchepare, J. Cs=wgCtr Natl Etud Telecommun,Bagneux Lab/F-92220 ; Ecole Polytechn,Ecole p\h=w+103$M_L<@_4 zL1450^N~LL-r,20$M_,@_<, 14766-14769 $M_,@_<,%A\\As01mesant\Procite Databases\WCS\Articles\Ruvimov S 1995 05.pdfA$M_,@_r<,+125$M_,@_<,,8Growth/ Superlattices/ Surfaces/ Islands/ Ingaas/ Strain8$M_,@_<,1580s;@J1Schlesinger, Z. //Hwang, J. C. M. //Allen, S. J. 1=Hxԫ'Bell Tel Labs Inc/Murray Hill//Nj/07974'=Hxԫ2Subbansd-Landau-Level Coupling in a Two-Dimensional2=Hxԫ02.5.1=Hxԫ Physical Review Letters=Hxԫs Article$M_@_l 1983 Jun 27X(=HxԫX(=Hxԫ50$M_@_l26s$M_@_l 2098-2101 $M_@_l%E\\As01mesant\Procite Databases\WCS\Articles\Schlesinger Z 1983 06.pdf,@/hH9XsXFs sX(=HxԫX(=Hxԫ+109$M_@_l1610t~o>g1?NPaul, W.=@qp<LBand Structure of the Intermetallic Semiconductors from Pressure ExperimentsL=@qp<01.3.3 Eleabases\WCS\Articles\Paul W 1961 10.pdf9$M_t@_lXt~64590u܊(=1?x Hayashi, Izuo 0*=(Wu &Doudble Heterostructure Juncion Lasers0*=(Wu %0*=(Wu 10.1.T#S,\D-Dq$M_,@_J, 2433-2436 $M_,@_J,%G\\As01mesant\Procite Databases\WCS\Articles\Peyghambarian N 1984 12.pdfG$M_,@_J,+1q412$M_,@_J,1510r;@,Ruvimov, S.S. //Werner, P. //Scheerschmidt, K. //Gosele, U. //Richter, U. //Ledentsov, N. N. //Grundmann, M. //Bimberg, D. //Ustinov, V. M.//Egorov, A. Y.//Kopev, P. S. //Alferov, rZ. I.  5=ptw5=ptw5=ptwMax Planck Mikrostrukturphys,Weinberg 2/D-06120 ; Lab Elektronenmikroskopire Nat Wissensch & Med/D-06120 ; Tech Univ Berlin,Inst Festkorperphys/D-10623 Berlin//Germany ; Af Ioffe Phys Tech Inst/St Petersburg 194021//Russia5=ptwFStructurarl Characterization of (In,Ga)As Quantum Dots in a GaAs Matrix 5=ptw5=ptw5=ptw5=rptw5=ptw5=ptw5=ptw07.4.25=ptw "Physical Review B-Crondensed Matter"5=ptw Article$M_,@_<, 1995 May 15 $M_,@_<,51$M_,@_Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Pero~t Cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experi<1?LMendez, E. E.//Bastard, G.//Chang, L. L.//Esaki, L.//Morkoc, H.//Fischer, R.L [=8lq XIBM Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Univ Illinois/Urbana//Il/61801L=8lq L=8lq UL=8lq EEffect of an Electric-Field on the Luminescence of GaAs Quantum WellsE [=8lq 03.3.2 [=8lq  "Physical Review B-Condensed Matter" [=8lq  ArticleM|wDensity-Matrix Theory of ^N~\-~mentally found to decrease.>$M_l@_p+115$M_l@_p,Lasers$M_l@_p2020<@LMendez, E. E.//Bastard, G.//Chang, L. L.//Esaki, L.//Morkoc, H.//Fischer, R.L [=8lq XIBM Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Univ Illinois/Urbana//Il/61801L=8lq L=8lq UL=8lq EEffect of an Electric-Field on the Luminescence of GaAs Quantum WellsE [=8lq 03.3.2 [=8lq  "Physical Review B-Condensed Matter" [=8lq  ArticleP$M_lYT@_L+lP 1982 Dec 15 P$M_lYT@_L+lP26P$M_lYT@_L+lP12P$M_lYT@_L+lP 7101-7104 P$M_lYT@_L+lP10P$M_lYT@_L+lP%A\\As01mesant\Procite Databases\WCS\Articles\Mendez EE 1982 12.pdfAP$M_lYT@_L+lP+229P$%M_lYT@_L+lP60610f Quantum Electronics#=HwM| Article?@_lH\J@_TJTHl?1985?@_lH\J@_TJTHl?21?@_lH\J@_TJTHf Quantum Electronics#=HwM| Article?@_lH\J@_TJTHl?1985?@_lH\J@_TJTHl?21?@_lH\J@_TJTHf Quantum Electronics#=HwM| Article?@_lH\J@_TJTHl?1985?@_lH\J@_TJTHl?21?@_lH\J@_TJTH$M_ _"H1987$M_ 1987$M_ o2b\-"@_"H5$M_ "@_"H1$M_ "@_"H16-23$M_ "@_"H%?\\As01mesant\Procite Databases\WCS\Articlevs/Haus HA 1987 01.pdf?@=Dqf+125$M_ "@_"H19740;@BZrenner, A. //Butov, L. V. //Hagn, M. //Abstreiter, G. //Bohm, G. B=rz^Tech Univ Munich,Walter Schottky Inst/D-85748 ; Russian Acad Sci,Inst Solid State Phys/142432^=rzQQuantum Dots Formed by Interface Fluctuations in Coupled-Quantum-Well StructuresQ=rz03.5.1=rz=rz Physical Review Letters=rz Article$M_$\@_Tvj May 23, 1994 $M_$\@_Tvj72$M_$\@_Tvj21$M_$\@_Tvj 3382-3385 $M_$\@_Tvj%A\\As01mesant\Procite Databases\WCS\Articles\Zrenner A 1994 05.pdfA$M_$\@_Tvj*We report about optical experiments on electric field tunable AlAs/GaAs coupled quantum well structu;1?  Asbeck, P.M. 0= r0= r'Philips Labs/Briarcliff Manor//Ny/10510'0= rTSelf-Absorption Effects on Radiative Lifetime in GaAs-GaAlAs Double HeterostructuresT0= r03.3.10= r0= r Journal of Applied Physics0= r Articles$M_4|$~@_~4s1977s$M_4|$~@_~4s48s$M_4|$~ <l,\dd-res in the regime of the electric field induced GAMMA-X transition. Using the energetically tunable X-point state in the AlAs layer as an internal energy spectrometer and charge reservoir we are able to map out the electronic states in the neighboring GaAs quantum well in great detail. In spatially resolved and bias voltage dependent photoluminescence experiments we find sets of extremely narrow emission lines below the fundamental band gap energy of the GaAs quantum well. The new emission lines are shown to originate from natural quantum dots which are formed by well width fluctuations of the GaAs quantum well.$M_$\@_Tvj+158$M_$\@_Tvj,dSemiconductor Interfaces/ Photoluminescence/ Islands/ Gaas/Alxga1-X/ Superlattices/ Excitons :/ Growthd$M_$\@_Tvj2050C~4s+106s$M_4|$~@_~4s2060-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_@_~4s2s$M_4|$~@_~4s820-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_@_~4s2s$M_4|$~@_~4s820-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_@_~4s2s$M_4|$~@_~4s820-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_US5717247 US5736456 US5825092 US5828134 US6013948 US6098278 US6271598 US6300670 US6326689 US6355976 US3796927 US3798513 US3885196 US3959579 US3982268 US4074342 US4104674 US4188709 US4263341 US4275410 US43793078 US4074342 US4104674 US4188709 US4263341 US4275410 US43793070N~lt-echnical Disclosure Bulletin Vol. 14, No. 1, June 1971, page 295-296. Article by S. Oktay et al. Electronics, February 17, 1969 pages 64-65.{=s "+US3851379 US3857169 US4126932 US4141135 US4187513 US4276098 US5144413 US5166769 US3864819 US3878008 US3896473 US3903592 US4740477 US4748483 US5653891 US5661091 US3913215 US3929531 US3973320 US3986142 US4283734 US4312115 US4904610 US4980315 US3816194 US3849217 US3930912 US3955270 US4033810 US4064620+{=s %;\\As01mesant\Procite Databases\WCS\Patents\US03689993__.pdf;{=s 'B01J 17/0; H01L 7/66{=s +30{=s 90} =@2PLarsen, P. K. //Neave, J. H. //Vanderveen, J. F. //Dobson, P. J. //Joyce, B. A. P8=p(̬Philips Res Labs,Pob 80000/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Univ London Imperial Coll Sci & Technol/London Sw78=p(̬*GaAs(001)-C (4x4): a Chemisorbed Structure*8=p(̬06.2.18=p(̬ "Physical Review B-Condensed Matter"8=܊(=Ү1?BSchwartz, Bertram//Spitzer, Stuart Marshall//Weigle, Gregory DyettB[~=Xut)\xMethod of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealingx[~=Xut)\08.1.2[~=Xut)\)Bell Telephone Laboratories, Incorporated)[~(4713030?$T~il- Letters=pZp Article$M_@_` 1986 Jun 23 $M_@_`56$M_@_`25$M_@_` 2748-2751 $M_@_`%D\\As01mesant\Procite Databases\WCS\Articles\Mysyrowicz A 1986 06.pdf,$M_@_c`$M_@_`+269$M_@_`1340<@ZTolar, Neal Jay{=s UFabrication of Semiconductor Devices Having Low Thermal Inpedance Bonds to Heat SinksU=s 08.4{=s 570160{=s  US3689993 {=s US{=s  9/12/1972 {=s  US3689993 {=s 1US2530110 US3061422 US3319135 US3508124 US36182021{=s IBM T} =1?2PLarsen, P. K. //Neave, J. H. //Vanderveen, J. F. //Dobson, P. J. //Joyce, B. A. P8=p(̬Philips Res Labs,Pob 80000/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Univ London Imperial Coll Sci & Technol/London Sw78=p(̬*GaAs(001)-C (4x4): a Chemisorbed Structure*8=p(̬06.2.18=p(̬ "Physical Review B-Condensed Matter"8=p(̬ Article7$M_4@$B@_B(47 1983 Apr 15 +=p(̬277$M_4@$B@_B(4787$M_4@$B@_B)Yt-l.sub.2 O.sub.3 Films, in Journ. Electrochem. Soc., 1971, pp. 1619-1923."[~=Xut)\"US3982265 US4116722 US4145262 US4194927 US4216036 US4226667 US4226934 US4246296 US4256520 US4595423 US4634474 US4843450 US5021365 US5262360 US5373522 US5559058 US5567980 US5696023 US5736454 US5958519 US6039857[~=Xut)\%;\\As01mesant\Procite Databases\WCS\Patents\US03890169__.pdf;[~=Xut)\' H01I 7/44 [~=Xut)\+21[~=Xut)\62860;@*rAshoori, R. C. //Stormer, H. L. //Weiner, J. S. //Pfeiffer, L. N. //Pearton, S. J. //Baldwin, K. W. //West, K. W. r/=Ew(p$At&T Bell Labs/Murray Hill//Nj/07974$/=Ew(pDSingle-Electron Capacitance Spectroscopy of Discrete Quantum LevelsD/=Ew(p03.5.1/=Ew(p/=Ew(p Physical Review Letters/=Ew(p Article $M_@_|  May 18, 1992 $M_@_| 68 $M_@_| 20 $M_@_|  3088-3091 $M_@_| %B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1992 05.pdfB $M_@_| *UWe observe the capacitance signal resulting from single electrons tunneling into discrete quantum levels. The electrons tu;1?4Aspnes, D. E. @=0u/)Bell Commun Res Inc/Murray Hill//Nj/07974)@=0u/WAbove-Bandgap Optical Anisotropies in Cnal of Vacuum Science & Technology B(@}Eu5e@_| 68 $M_@_| 20 $M_@_|  3088-3091 $M_@_| %B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1992 05.pdfB $M_@_| *UWe observe the capacitance signal resulting from single electrons tunneling into discrete quantum levels. The electrons tunnel between a metallic layer and confined states of a single disk in a microscopic capacitor fabricated in GaAs. Charge transfer occurs only for bias voltages at which a quantum level resonates with the Fermi energy of the metallic layer. This creates a sequence of distinct capacitance peaks whose bias positions directly reflect the electronic spectrum of the confined structure. From the magnetic field evolution of the spectrum, we deduce the nature of the bound states.U $M_@_| +194 $M_@_| ,'Zeeman Bifurcation/ Dot Spectra/ Sta5tes' $M_@_| 2090=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_+[N~ =);@4Aspnes, D. E. @=0u/)Bell Commun Res Inc/Murray Hill//Nj/07974)@=0u/WAbove-Bandgap Optical Anisotropies in Cubic Visible Near Ultraviolet Probe of SurfacesW@=0u/06.1.2@=0u/ (Journal of Vacuum Science & Technology B(@=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_o<0e 1498-1506 e$M_no@_o<0e%A\\As01mesant\Procite Databases\WCS\Articles/Aspnes DE 1986 09.pdfAe$M_no@_o<0e+137e$M_no@_o<0e2100;@>Aspnes, D. E. =pq*'Bell Tel Labs Inc/Murray Hill//Nj/07974'=pq*6Recombination at Semiconductor Surfaces and Interfaces6=pq*02.3.2=pq* Surface Science=pq* Article"$M_+-@_|-,"1983"$M_+-@_|-,"132"$M_+-@_|-,"1-3"$M_+-@_|-,"406-421"$M_+-@_|-,"%?\\As01mesant\Procite Databases\WCS\Articles\Aspnes DE 1983.pdf ,:=pq*:=pq*+133"$M_+-@_|-,"2110i.=[?fMChen, W. //Fritze, M. //Nurmikko, A. V. //Ackley, D. //Colvard, C. //Lee, H. M/=BrbwBrown Univ,Div Engn/Providence//Ri/02912 ; Brown Univ,Dept P@pN~)|-i.=@MGlembocki, O. J. //Shanabrook, B. V. //Bottka, N. //Beard, W. T. //Comas, J. MG=(vԫ Usn,Res Lab/Washington//Dc/20375 G=(vԫPhotoreflectance Characterization of Interband-Transitions in GaAs/AlGaAs Multiple Quantum Wells and Modulation-Doped HeterojunctionsG=(vԫ03.3.1G=(vԫ Applied Physics LettersG=(vԫ ArticleV$M_@_V 1985 May 15'=(vԫ'=(vԫ46V$M_@_V10V$M_@_V970-972V$M_@_V%D\\As01mesant\Procite Databases\WCS\Articles\Glembocki OJ 1985 05.pdf,XhH9XOXFO'=(vԫ+180V$M_@_V52130ning Procedures for Si, Ge, and III-V Compound SemiconductorsW=؜pP08.2.4=؜pP Applied Physics Lettersning Procedures for Si, Ge, and III-V Compound SemiconductorsW=؜pP08.2.4=؜pP Applied Physics Letters_ 8$316-318$M_$@_ 8$%9\\Aeron\Procite Databases\WCS\Articles/Aspnes DE 1981.pdf9$M_$@_ 8$+178$M_$@_ 8$ 2200o;g1?EOudar, J. L. //Hulin, D. //Migus, A. //Antonetti, A. //Alexandre, F. E@E=uXfEcole Polytech,Ecole Natl Super Tech Avancees,Opt Appl ; Ctr Natl EoN~ ?|-tud Telecommun,Lab Bagneux/F-92220f@E=uXXSubpicosecond Spectral Hole Burning Due to Non-thermalized Photoexcited Carriers in GaAsX@E=uXR01.6.2 Ultrafast Carrier-Carrier Scattering: Response to Ultrashort Optical PulsesRM=uX Physical Review Letters@E=uX Article$M_@_\91985 November 4$M_@_\955$M_@_\919$M_@_\9 2074-2077 $M_@_\9%@\\As01mesant\Procite Databases\WCS\Articles\Oudar JL 1985 11.pdf@$M_@_\9+215$M_@_\9 1440;@Averback, R. S. Y=u8y<8Argonne Natl Lab,Div Mat Sci & Technol/Argonne//Il/604398Y=u8y<&Fundamental-Aspects of Ion-Beam Mixing&Y=u8y<08.1.3Y=u8y< fNuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and AtomsfY=u8y< Article$M_4$@_~415$M_4$@_~41-6$M_4$@_~4675-687g=u8y<%@\\As01mesant\Procite Databases\WCS\Articles/Averback RS 1986.pdf@$M_4$@_~4+149$M_4$@_~42260} =1?2n. *(<@ Wilson, A.H. =pco:<(The Theory of Electronic Semi-Conductors(=pco:<.01.4.2 "Shallow" Extended-Wave-Function Levels.=pco:< Proceedings of the Royal Society =pco:<1932u$M_~@_buA134u$M_~@_bu277-287h=pco:<h=pco:<%>\\As01mesant\Procite Databases\WCS\Articles/Wilson AH 1931.pdf>u$M_~@_bu61690o;@"oRoukes, M. L. //Scherer, A. //Allen, S. J. //Craighead, H. G. //Ruthen, R. M. //Beebe, E. D. //Harbison, J. P. oȋ=htO"Bell Commun Res/Red Bank//Nj/07701"ȋ=htO6Quenching of the Hall-Effect in a One-Dimensional Wire6ȋ=htO03.4.2ȋ=htOȋ=htO Physical Review Lettersȋ=htO Article$M_@_: 1987 Dec 28 $M_@_:59$M_@_:26$M_@_: 3011-3014 $M_@_:%A\\As01mesant\Procite Databases\WCS\Articles\Roukes MLl 1987 12.pdfA$M_@_:+278$M_@_:1570i(\\As01mesant\Procite Databases\WCS\Articles/Wannier G 1937.pdf>$M_T^t@_lh l61700(t+136$M_ gDh@_t,Electron Wave-Guide/ Current Distributions/ Hall Point-Contact/ Gaas-Algaas/ Conductance Fluctuations/ Formula/ Magnetic-Fields/ SDcattering/ Systems$M_ gDh@_t2550]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_ :N~4p<@r AAkasaki, I. //Amano, H. //Koide, Y. //Hiramatsu, K. //Sawaki, N. A:=pq.4Nagoya Univ,Dept Electr,Furo Cho/Nagoya 46401//Japan4:=pq.Effects of AlN Buffer Layer on Crystallographic Structure and on Electrical and Optical-Properties of GaN and Ga1-xAlxN (0 < x <= 0.4) Films Grown on Sapphire Substrate by MOVPE:=pq.07.5.3:=pq. Journal of Crystal Growth:=pq. Article8$M_t;d=@_\=819898$M_t;d=@_\=8 988$M_t;d=@_\=81-28$M_t;d=@_\=8209-2198$M_t;d=@_\=8%?\\As01mesant\Procite Databases\WCS\Articles\\Akasaki I 1989.pdf,:=pq.:=pq.:=pq.+3238$M"_t;d=@_\=82930=(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 =(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 =(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 or of two-dimensional four-terminal junctions in the ballistic regime. Experimentally, these systems exhibit magnetotransport anomalies at small fields, suppression (malies at small fields, suppression (70$M_@_HN~,*;@ EBaranger, H. U. //Divincenzo, D. P. //Jalabert, R. A. //Stone, A. D. E-=(plAt&T Bell Labs,1-D-230/Murray Hill//Nj/07974 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Yale Univ/New Haven//Ct/06520-=(plEClassical and Quantum Ballistic-Transport Anomalies in MicrojunctionsE-=(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 Article$M_ gDh@_t44$M_ gDh@_t19$M_ gDh@_t 10637-10675 $M_ gDh@_t%C\\As01mesant\Procite Databases\WCS\Articles\Baranger HU 1991 11.pdf,$M_ gDh@_t$M_ gDh@_t* We have performed quantum-mechanical and classical calculations of the magnetotransport behavior of two-dimensional four-terminal junctions in the ballistic regime. Experimentally, these systems exhibit magnetotransport anomalies at small fields, suppress <[?6(Abstreiter, G.//Cardona, M.//Pinczuk, A.(=( rt Tech Univ Munich,Dept Phys/D-8046 Garching//Fed Rep Ger ; Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep Ger ; at & T Bell Labs/Holmdel//Nj/07733=( rt ]Light Scattering in Solids IV: Light-Scattering by Free Carrier Excitations in Semiconductors]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_04.4.3(*=rD(*=rDtd04.4.3(*=rD^N~2*-;@ Baranger, H. U. //Mello, P. A. (*=rDtdgAt&T Bell Labs,1d-230,600 Mt Ave/Murray Hill//Nj/07974 ; Univ Nacl Autonoma Mexico,Inst Fis/Mexico Cityg(*=rDtdPMesoscopic Transport Through Chaotic Cavities: a Random S-Matrix Theory ApproachP(*=rDtd04.4.3(*=rDtd Physical Review Letters(*=rDtd Article$M_FG@_G Jul 4, 1994 $M_FG@_G73$M_FG@_G1$M_FG@_G142-145$M_FG@_G%C\\As01mesant\Procite Databases\WCS\Articles\Baranger HU 1994 07.pdfC$M_FG@_G*<We deduce the effects of quantum interference on the conductance of chaotic cavities by using a statistical ansatz for the S matrix. Assuming that the circular ensembles describe the S matrix, we find that the conductance fluctuation and weak-localization magnitudes are universal: they are independent of the size and shape of the cavity if the number of incoming modes, N, is large. The limit of small N is more relevant experimentally; here we calculate the full distribution of the conductance and find striking differences as N changes or a magnetic field is app_Electrical Linear-Response Theory in an Arbitrary Magnetic-Field: a New Fermi-Surface Formation_HHB02.5.3 "Physical Review B-Condensed Matter"HHB ArticleHHBE 1989 Oct 15 HHBE40HHBE12$M_܏@_ԏ17$M_܏@_ԏ8$M_@_ԏ2610^N~Y-L=P.u03.1.4x=P.u "Physical Review B-Condensed Matter"h=P.u Article$M_3$5@_5@ 1984 Jun 15 $M_3$5@_5@29$M_3$5@_5@12$M_3$5@_5@ 7042-7044 $M_3$5@_5@%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1984 06.pdfA$M_3$5@_5@+183$M_3$5@_5@2730;@@ HBerger, P. R. //Chang, K. //Bhattacharya, P. //Singh, J. //Bajaj, K. K. H0n=s+pUniv Michigan,Ctr High Frequency Microelectr,Dept Elect ; Usaf,Wright Aeronaut Labs,Avion Lab,Afwal Aadr/Wrightp0n=s+wRole of Strain and Growth-Conditions on the Growth Front Profile of InxGa1-xAs on GaAs During the Pseudomorphic Regimew0n=s+07.4.10n=s+0n=s+ Applied Physics Letters0n=s+ Article$M_D|@_t`B 1988 AUG 22 $M_D|@_t`B53$M_D|@_t`B8$M_D|@_t`B68;1?^ Brum, J. A. //Bastard, G. ^=o=Ecole Normale Super,Phys Solides Grp/F-75231 Paris 05//France=^=o7Resonant Carrier Capture by Semiconductor Quantum-Wells7^=o03.2.3^=o^=o "Physical Review B-Cond7g'WXDT4-686$M_D|@_t`B%A\\As01mesant\Procite Databases\WCS\Articles\Berger PR 1988 08.pdf,$M_D|@_t`B$M_D|@_t`B+148/$M_D|@_t`B2880;@^ Brum, J. A. //Bastard, G. ^=o=Ecole Normale Super,Phys Solides Grp/F-75231 Paris 05//France=^=o7Resonant Carrier Capture by Semiconductor Quantum-Wells7^=o03.2.3^=o^=o "Physical Review B-Condensed Matter"^=o Article$M_T@_LPH4 1986 Jan 15 $M_T@_LPH433$M_T@_LPH42$M_T@_LPH4 1420-1423 $M_T@_LPH4%?\\As01mesant\Procite Databases\WCS\Articles\Brum JA 1986 01.pdf?$M_T@_LPH;4+162$M_T@_LPH42910@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_8hUL-;@| ?Chang, A. M. //Baranger, H. U. //Pfeiffer, L. N. //West, K. W. ?4=rpd/At&T Bell Labs,600 Mt Ave/Murray Hill//Nj/07974/4=rpd`Weak-Localization in Chaotic Versus Nonchaotic Cavities: a Striking Difference in the Line-Shape`4=rpd04.4.34=rpd Physical Review Letters4=rpd Article$M_@_ Oct 10, 1994 $M_@_73$M_Ш@_15$M_@_ 2111-2114 $M_@_%@\\As01mesant\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf@$M_Ψ@_*wWe report experimental evidence that chaotic and nonchaotic scattering through ballistic cavities display distinct signatures in quantum transport. In the case of nonchaotic ;1? Chang, Y. C. //Aspnes, D. E. /=pnԫUniv Illinois,Dept Phys,1110 W Green St/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Bell Commun Res Inc/Red Bank//Nj/07701/=pnԫGTheory of Dielectric-Function Anisotropies of (001) GaAs (2x1) SurfacesG/=pnԫ06.1.2/=pnԫ "Physical Review B-Condensed Matter"/=pnԫ Article,$M_\5L7@_D7f\, 1990 Jun 15 @=pnԫ41,$M_\5L7@_D7f\,17,$M_\5L7@_D7f\, 12002-12012 ,$M_\5L7@_D7f\,%;\\Aeron\Procite Databases\WCS\Artic\\Aeron\Procite Databases\WCS\Artic^N~-dArticles\Chang YC 1990 06.pdf,W(hH9XXF@=pnԫ@=pnԫ+110,$M_\5L7@_D7f\,2950;@ 7Chomette, A. //Deveaud, B. //Regreny, A. //Bastard, G. 7Pp=v>RoCtr Natl Etud Telecommun/F-22301 Lannion//France ; Ecole Normale Super,Phys Solide Grp/F-75231 Paris 05//FranceoPp=v>RYObservation of Carrier Localization in Intentionally Disordered GaAs/GaAlAs SuperlatticesYPp=v>R04.2.2=v>R=v>R Physical Review LettersPp=v>R Articleb$M_km@_mXb 1986 Sep 22 b$M_km@_mXb57b$M_km@_mXb12b$M_km@_mXb 1464-1467 b$M_km@_mXb%B\\As01mesant\Procite Databases\WCS\Articles\Chomette A 1986 09.pdfBb$M_km@_mXb+127b$M_km@_mXb2960=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_P=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_P=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_PDt'W\l>@"Beattie, A. R. //Landsberg, P. T. "8=@rAuger effect in semiconductors8=@rO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO8=@r WProceedings of the Royal Society of London Series a-Mathematical and Physical SciencesW8=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_P$E%?\\As01mesant\Procite Databases\WCS\Articles/Beattie AR 1959.pdf,=@r=@r)0Copyright Statement: (c)2003 Inst. For Sci. Info0E$M_NP@_P$E+267E$M_NP@_P$E,A1959wu31900003E$M_NP@_P$E65280ound Semicond ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801I=qԫ4Carbon Diffusion in Undoped, N-Type, and P-Tybon Diffusion in Undoped, N-Type, and P-Type GaAs4I=qԫ08.1.1I=qԫ Applied Physics LettersI=qԫ ArticleR$M_<[,]@_$]<\\As01mesant\Procite Databases\WCS\Articles/Hersee SD 1986.pdf>$M_ݽF@_hE+110$M_@_hE3330ݕ=1?@07.1.1HC Evans, R.C. HC$An Introduction to Crystal Chemistry$HC Cambridge HC0Cambridge University PressHC01964HC0%NoneHC064320 Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l  Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l  Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l -]<lN~-08.2.1=pv^ &Journal of Vacuum Science & Technology&=pv^ Articleo$M_xz@_zo 1978 Jul-Aug o$M_xz@_zo15o$M_xz@_zo4o$M_xz@_zo 1274-1286 o$M_xz@_zo%B\\As01mesant\Procite Databases\WCS\Articles\Goddard WA 1978 07.pdfBo$M_xz@_zo+113o$M_xz@_zo3250;@ fHeinecke, H. //Brauers, A. //Grafahrend, F. //Plass, C. //Putz, N. //Weyers, M. //Luth, H. //Balk, P. f=`p3nRhein Westfal Th Aachen,Inst Semicond Electr/D-5100 ; Rhein Westfal Th Aachen,Sonderforsch Bereich 202/D-5100n=`p36Selective Growth of GaAs in the MOMBE and MOCVDSystems6=`p306.5.2=`p3 Journal of Crystal Growth=`p3 Article`$M_ik@_k4`1986`$M_ik@_k4`77`$M_ik@_k4`1-3`$M_ik@_k4`303-309`$M_ik@_k4`%?\\As01mesant\Procite Databases\WCS\Articles/Heinecke H 1986.pdf?`$M_ik@_k4`+104`$M_ik@_k4`3320<AA Study of the Orientation Dependence of Ga(Al)As Growth by MOVPEAH=q\<06.4.2H=q\< Journal of Crystal Growth<AA Study of the Orientation Dependence of Ga(Al)As Growth by MOVPEAH=q\<06.4.2H=q\< Journal of Crystal Growth @ );@4 KKang, W. //Stormer, H. L. //Pfeiffer, L. N. //Baldwin, K. W. //West, K. W. K=tl,$At&T Bell Labs/Murray Hill//Nj/07974$=tl,How Real Are Composite Fermions=tl,02.6.20=tl, Physical Review Letters=tl, Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l 3850-3853 $M_l\@_T`1l%>\\As01mesant\Procite Databases\WCS\Articles\Kang W 1993 12.pdf,$M_l\@_T`1l$M_l\@_T`1l*UAccording to recent theories, a system of electrons at the half-filled Landau level can be transformed to an equivalent system of composite fermions at zero effective magnetic field. In order to test for these new particles, we have studied transport in antidot superlattices in a two-dimensional electron gas. At low magnetic fields electron transport exhibits well-known resonances at fields where the classical cyclotron orbit becomes commensurate with the antidot lattice. At nu=1/2 we observe the same dimensional resonances. This establishes the semiclassical behavior of composite fermions.U$M_l\@_T`1l+192$M_l\@_T`1l,pIncompressible Quantum Fluid/ Dimensional Electron-Gas/ States/ Magnetoresistance/ Statistics/ Hierarchy/ Systemp-$M_l\@_T`1l3380;1?f Lee, Y. H. //Chavezpirson, A. //Koch, S. W. //Gibbs, H. M. //Park, S. H. //Jeffery, A. //Peyghambarian, N. //Banyai, L. //Gossard, A. C. //Wiegmann, X7=PnN~ ;@f Lee, Y. H. //Chavezpirson, A. //Koch, S. W. //Gibbs, H. M. //Park, S. H. //Jeffery, A. //Peyghambarian, N. //Banyai, L. //Gossard, A. C. //Wiegmann, X7=PnUniv Arizona,Ctr Opt Sci/Tucson//Az/85721 ; Univ Frankfurt,Inst Theoret Phys/D-6000 Frankfurt 1//Fed Rep ; at&T Bell Labs/Murray Hill//Nj/07974X7=Pn/Room-Temperature Optical Nonlinearities in GaAs/X7=Pn05.1.36=Pn6=Pn Physical Review LettersX7=Pn ArticleA$M_JL@_L A 1986 Nov 10 A$M_JL@_L A57A$M_JL@_L A19A$M_JL@_L A 2446-2449 A$M_JL@_L A%>\\As01mesant\Procite Databases\WCS\Articles\Lee YH 1986 11.pdf>A$M_JL@_L A+149.A$M_JL@_L A3430.=01?J00.1HF Ashby, M.F. HF(Materials Selection in Mechanical Design(HF2ndHF OxfordHF Butterworth-HeinemannHF 1999HF A%NoneHF 64330=g1?T01.2.1 Bonds and EnergiesHCPauling, LinusHCThe Nature of the Chemical BondHCIthacaHC0Cornell University PressHC01960HC0%NoneH =$TN~ -%C064340p;@9Weisbuch, C. //Nishioka, M. //Ishikawa, A. //Arakawa, Y. 9]=Rhein Westfal Th Aachen,Inst Semicond ; Rhein Westfal Th Aachen,Bereich Sonderforsch 202/D-5100 ; Rhein Westfal Th Aachen,Inst Phys 2/D-5100 Aachen//Fed Rep=v>@A Comparative-Study of Ga(CH3)3 and Ga(C2H5)3 in the MOMBE GaAs@=v>06.4.2=v> Journal of Crystal Growth=v> Article $M_ @_  1986 $M_ @_  74 $M_ @_  2 $M_ @_  292-300 $M_ @_  %;\\As01mesant\Procite Databases\WCS\Articles/Putz N 1986.pdf, $M_ @_   $M_ @_  +158 $M_ @_  3700ysical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_ysical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_ysical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_he experimental spectra reproduce many features of a noninteracting electron model with an added fixed charging energy. However, in detailed observations deviations are apparent: Exchange induces a two-electron sJul 26, 1993 $M_l@_*ul71$M_l@_^N~-p;@ aAshoori, R. C. //Stormer, H. L. //Weiner, J. S. //Pfeiffer, L. N. //Baldwin, K. W. //West, K. W. a;=|vb$At&T Bell Labs/Murray Hill//Nj/07974$;=|vbCN-Electron Ground-State Energies of a Quantum-Dot in Magnetic-FieldC;=|vb03.5.2&=|vb Physical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_*ul4$M_l@_*ul613-616$M_l@_*ul%B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1993 07.pdfB$M_l@_*ul*WUsing single-electron capacitance spectroscopy, we map the magnetic field dependence of the ground state energies of a single quantum dot containing from 0 to 50 electrons. The expe;1?~YReed, M. A. //Bate, R. T. //Bradshaw, K. //Duncan, W. M. //Frensley, W. R. //Shih, H. D. Y0=ptwR4Texas Instruments Inc,Cent Res Labs/Dallas//Tx/7526540=ptwR9Spatial Quantization in GaAs-AlGaAs Multiple Quantum Dots90=ptwR03.5.00=ptwR0=ptwR (Journal of Vacuum Science & Technology B(0=ptwR Article$M_@_K 1986 Jan Feb$M_@_K$M_@_K4$M_@_K1$M_@_K358-360$M_@_K%:\\^N~/-neling between ground states of neighboring quantum wells accompanied by the stimulated emission of a photon.$M_<t@_l\+125$M_<t@_l\,El ?ectric-Fields$M_<t@_l\1100;@4Shanabrook, B. V. //Glembocki, O. J. //Beard, W. T. 40=o Usn,Res Lab/Washington//Dc/20375 0=oMPhotoreflectance Modulation Mechanisms in GaAs-Alxga1- Multiple Quantum-WellsM0=o03.3.20=o0=o "Physical Review B-Condensed Matter"0=o Article$M_@_}\ 1987 Feb 15 $M_@_}\35$M_@_}\5$M_@_}\ 2540-2543 $M_@_}\%E\\As01mesant\Procite Databases\WCS\Articles\Shanabrook BV 1987 02.pdfET$M_@_}\+172$M_@_}\3760ses\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120%"%9\\Aeron\Procite Databases\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120%"%9\\Aeron\Procite Databases\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120%"%9\\Aeron\Procite Databases\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120Bre% -As01mesant\Procite Databases\WCS\Articles\Reed MA 1986 01.pdf?$M_@_K+105$M_@_K3710i.=@LtKeay, B. J. //Zeuner, S. //Allen, S. J. //Maranowski, K. D. //Gossard, A. C. //Bhattacharya, U. //Rodwell, M. J. W. t(o=uhUniv Calif Santa Barbara,Ctr Free Electron Laser ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106 ; Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa(o=uhDynamic Localization, Absolute Negative Conductance, and Stimulated, Multiphoton Emission in Sequential Resonant Tunneling Semiconductor Superlatticesp(o=uh(o=uh%(o=uh04.1.1.2(o=uh(o=uh Physical Review Letters(o=uh Article$M_<t@_l\ Nov 27, 1995 $M_<t@_l\75$M_<t@_l\22$M_<t@_l\ 4102-4105 $M_<t@_l\%?\\As01mesant\Procite Databases\WCS\Articles\Keay BJ 1995 11.pdf?$M_<t@_l\*We report the first observation of absolute negative conductance and multiphoton stimulated emission in sequential resonant tunneling semiconductor superlattices driven by intense terahertz electric fields. With increasing terahertz field strength the conductance near zero de bias decreases towards zero and then becomes negative. This is accompanied by new steps and plateaus that are attributed to multiphoton-assisted resonant tun+495"$M_+-@_|-2%"2120!+495"$M_+-@_|-2%"2120"$M_+-@_|-2%"2120k3c#S-,4=?t4=?t4=?t4=?t4=?t4=?t 4=?t4=?t4=?t4=?t4=?t4=?t4=?t4=?t 4=?tbEffective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structuresb4=?t01.2.3 Piezoelasticity4=?t Applied Physics Letters4=?t1998)$M_24@_4F)73)$M_24@_4F)14)$M_24@_4F) 2006-2008 )$M_24@_4F)%C\\As01mesant\Procite Databases\WCS\Articles\Chichibu SF 1998 10.pdfC)$M_24@_4F))Copyright 2003 SciSearch Plus)$M_24@_4F<)+83)$M_24@_4F)64560 X=pw)ԫ^Role of Interface Roughness and Alloy Disorder in Photoluminescence in Quantum-Well Structures^ X=pw)ԫ03.1.2 X=p X=pw)ԫ^Role of Interface Roughness and Alloy Disorder in Photoluminescence in Quantum-Well Structures^ X=pw)ԫ03.1.2 X=p2N~$<;@Singh, J. //Bajaj, K. K.  X=pw)ԫcUniversal Energy Syst Inc,4401 Dayton Xenia ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright Pattersonc X=pw)ԫ^Role of Interface Roughness and Alloy Disorder in Photoluminescence in Quantum-Well Structures^ X=pw)ԫ03.1.2 X=pw)ԫ Journal of Applied Physics X=pw)ԫ Article`$M_ik@_k+` 1985 Jun 15h/=pw)ԫh/=pw)ԫ57`$M_ik@_k+`12`$M_ik@_k+` 5433-5437 `$M_ik@_k+`%?\\As01mesant\Procite Databases\WCS\Articles\Singh J 1985 06.pdf,XhH9XXFh/=pw)ԫ+145`$M_ik@_k+`3770V=@5?|Direct Evidence for the Site of Substitutional Carbon in GaAs>=u507.1.7=u5 Applied Physics Letters=u5 Article@_L<@_4,)L1982@_L<@_4,)L41@_L<@_4,)L1@_L<@_4,)L70-72@_L<@_4,)L%=\\As01mesant\Procite Databases\WCS\Articles/Theis WM 1982.pdf=@_L<@_4,)L*Direct evidence that substitutional carbon in GaAs is predominantly on the As sublattice is obtained from Fourier transform infrared spectroscopy absorption measurements of the carbon-induced localized vibrational mode (LVM). The previously reported LVM absorption band of carbon is measured under high resolution conditions and is found to be the near superposition of at lea <1?@FSeilmeier, A.//Hubner, H. J.//Abstreiter, G.//Weimann, G.//Schlapp, W.F"=s$Tech Univ Munich,Dept Phys/D-8000 Munich 2//Fed Rep Ger ; Tech Univ Munich,Dept Phys/D-8046 Garching//Fed Rep Ger ; Deutsch Bundespost,Forschungsinst/D-6100 Darmstadt//Fed Rep Ger"=s$wIntersubband Relaxation in GaAs-AlxGa1-xAs Quantum-Well Structures Observed Directly by an Infrared Bleaching Techniquew"=s$04.3.3S=s$ Physical Review LettersK=@_=2+1902$M_;=@_=260480^N~.d"=s$ Article2$M_;=@_=219872$M_;=@_=2592$M_;=@_=2122$M_;=@_=2 1345-1348 2$M_;=@_=2202$M_;=@_=2%C\\As01mesant\Procite Databases\WCS\Articles\Seilmeier A 1987 09.pdfC2$M_P;=@_=2+1902$M_;=@_=260480;@dBeenakker, C. W. J. }= u=/Philips Res Labs/5600 Md Eindhoven//Netherlands/}= u=4Edge Channels for the Fractional Quantum Hall-Effect4}= u=02.6.2}= u= Physical Review Letters}= u= Article$M_l$\&@_T&(l 1990 Jan 8 $M_l$\&@_T&(l64$M_l$\&@_T&(l2$M_l$\&@_T&(l216-219$M_l$\&@_T&(l%E\\As01mesant\Procite Databases\WCS\Articles\Beenakker CWJ 1990 01.pdf,$M_l$\&@_T&(l$M_l$\&@_T&(l+169$M_l$\&@_T&(l3940 Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t :jFv\ .W=@ Ambacher, O. XF=xqMTech Univ Munich,Walter Schottky Inst,Am Coulombwall,D-85748 Garching,GermanyMXF=xq-Growth and Applications of Group Iii Nitrides-XF=xq12.0(=xq $Journal of Physics D-Applied Physics$XF=xq Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t 2653-2710 @_|@_t353@_|@_t%B\\As01mesant\Procite Databases\WCS\Articles\Ambacher O 1998 10.pdfB@_|@_t*Recent research results pertaining to InN, GaN and AIN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions W=u=? Nakamura, S. :Nichia Chem Ind,Dept Res & Dev,491 Oka,Tokushima 774,Japan:`The Roles of Structural Imperfections in Ingan-Based Blue Light-Emitting Diodes and Laser Diodes`Dev,491 Oka,Tokushima 774,Japan:`The Roles of Structural Imperfections in Ingan-Based Blue Light-Emitting Diodes and Laser Diodes`^N~ .tW=@ Nakamura, S. :Nichia Chem Ind,Dept Res & Dev,491 Oka,Tokushima 774,Japan:`The Roles of Structural Imperfections in Ingan-Based Blue Light-Emitting Diodes and Laser Diodes`07.5.4 Science Review Aug 14, 1998 2815379956-96172%B\\As01mesant\Procite Databases\WCS\Articles\Nakamura S 1998 08.pdfB*High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InCaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 X 10(8) to 1 X 10(12) cm(-2)). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate; InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2;1?$Beenakker, C. W. J. //Vanhouten, H. $N=r>d/Philips Res Labs/5600 Ja Eindhoven//Netherlands/N=r>d2Billiard Model of a Ballistic Multiprobe Conductor2N=r>d04.4.3N=r>d Physical Review LettersN=r>d Article$M_\L@_D 1989 Oct 23 $M_\L@_D63$M_\L@_D17$M_\L@_D 1857-1860nor//Ny/105$M_\L@_D 1857-1860i^N~~l. mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.+139,hGrown GaN Films/ Gallium Nitride/ Buffer Layer/ Hydrogena<tion/ Superlattices/ Luminescence/ Sapphire/ Mgh64400;@$Beenakker, C. W. J. //Vanhouten, H. $N=r>d/Philips Res Labs/5600 Ja Eindhoven//Netherlands/N=r>d2Billiard Model of a Ballistic Multiprobe Conductor2N=r>d04.4.3N=r>d Physical Review LettersN=r>d Article$M_\L@_D 1989 Oct 23 $M_\L@_D63$M_\L@_D17$M_\L@_D 1857-1860 $M_\L@_D%E\\As01mesant\Procite Databases\WCS\Articles\Beenakker CWJ 1989 10.pdfE$M_\L@_D+160$M_\L@_D4000+=(pml04.4.3+=(pml "Physical Review B-Condensed Matter"+=(pml Article$M_"#@_+=(pml04.4.3+=(pml "Physical Review B-Condensed Matter"+=(pml Article$M_"#@_+=(pml04.4.3+=(pml "Physical Review B-Condensed Matter"+=(pml Article$M_"#@_-$M_68@_|8 -379-$M_68@_|8 -6564-$M_68@_|8 -413-419-$M_68@_|8 -%=\\Aeron\Procite Databasite DatabasBrb"%..p;@Ashoori, R. C. ;=pq<(Mit,Dept Phys,13-2053,Cambridge,Ma 02139(;=pq<Electrons in Artificial Atoms;=pq<04.4.1;=pq< Nature;=pq< Review-$M_68@_|8 - Feb 1, 1996 -$M_68@_|8 -379-$M_68@_|8 -6564-$M_68@_|8 -413-419-$M_68@_|8 -%B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1996 02.pdf,-$M_68@_|8 --$M_68@_|8 -*|Progress in semiconductor technology has enabled the fabrication of structures so small that they can contain just one mobile electron. By varying controllably the number of electrons in these 'artificial atoms' and measuring the energy required to add successive electrons, one can conduct atomic physics experiments in a regime that is inaccessible to experiments on real atoms.|-$M_68@_|8 -+244-$M_68@_|8 -,Quantum Hall Regime/ Coulomb Island/ Magnetic-Field/ Spectroscopy/ Transport Spectroscopy/ Zeeman Bifurcation/ Spectra/ Oscillations/ States/ Heterostructures-$M_68@_|8 -2280;1?"?Bhat, R. //Kapon, E. //Hwang, D. M. //Koza, M. A. //Yun, C. P. ?=@=p 8Bell Commun Res,331 Newman Springs Rd/Red Bank//Nj/077018.pdf6=@=p +115v$M_ @_v4130;1?6EBiegelsen, D. K. //Bringans, R. D. //Northrup, J. E. //Swartz, L. E. E=r\K5Xerox Corp,Palo Alto Res Ctr,3333 Coyote Hill Rd/Palo5N~;@rXBimberg, D. //Christen, J. //Fukunaga, T. //Nakashima, H. //Mars, D. E. //Miller, J. N. Xh=XqFTech Univ Berlin,Inst Festkorperphys,Hardenbergstr 36/D-1000 ; Optoelectr Joint Res Lab/Kawasaki 211//Japan ; Hewlett Packard Labs/Palo Alto//Ca/94304h=XqFVCathodoluminescence Atomic Scale Images of Monolayer Islands at GaAs/GaAlAs InterfacesVh=XqF06.2.4Z=XqF (Journal of Vacuum Science & Technology B(h=XqF Article$M_@_)̿ 1987 JUL-AUG $M_@_)̿5$M_@_)̿4$M_@_)̿ 1191-1197 $M_@_)̿%A\\As01mesant\Procite Databases\WCS\Articles\Bimberg D 1987 07.pdfA$M_@_)̿+147$M_@_) 4210xs,706518p=xs, US3761785 p=xs,USp=xs, 9/25/1973 p=xxs,706518p=xs, US3761785 p=xs,USp=xs, 9/25/1973 p=xUS4927782 US4972248 USRE28952 US6100548 US3951708 US3975221 US4212022 US4262296 US4631560 US4683642 US4985369 US5087581 US6300199 US3823352 US3846822 US3851379 US3866310 US3924265 US3936331 US3994758 US3999211 US4466008 US4530149 US4750023 US4768071 US5405454 US5543351]p=xs,%6\\Aeron\Procite Databases\WCS\Patents\US03761785__.pdf6p^2N~.$. Physical Review Letters=r\K Articler$M_{}@_}r 1990 Jul 23 =r\K65r$M_{}@_}r4r$M_{}@_}r452-455r$M_{}@_}r%D\\As01mesant\Procite Databases\WCS\Articles\Biegelsen DK 1990 07.pdf,hhuH9XXF=r\K+147r$M_{}@_}r4150݊(=@>Biefeld, R. M.//Fritz, I. J.//Gourley, Paul L.//Osbourn, G. C.:1=Ho#1=Ho#1=Ho#Superlattice Optical Device1=Ho#04.31=Ho#UThe United States of America as Represented by The United States Department of EnergyU1=Ho#5971951=Ho# US4616241 1=Ho#US1=Ho# 10/7/1986 1=Ho# US4616241 1=Ho#US4319259 US43652601=Ho#x"J. W. Matthews et al., ""Defects in Epitaxial Multilayers"", Journal of Crystal Growth 27 (1974), pp. 118-125.; G. C. Osbourn et al., ""A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Supperlattice"", Appl. Phys. Lett. 41(2), Jul. 15, 1982, pp. 172-174.; Osbourn, ""Strained-Layer Superlattices from Lattice Mismatched Materials"", J. Appl. Phys. 53(3), Mar. 1982, pp. 1586-1589."x1=Ho#"IUS4711857 US4712121pnN~nL.992 $M_ @_71$M_ @_1$M_ @_533-535$M_ @_%C\\As01mesant\Procite Databases\WCS\Articles\Tsukamoto S 1992 01.pdfC؞=rXMԫ*lSuccessful fabrication of thin GaAs quantum wires (120-200 angstrom) x (200-300 angstrom) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.l$M_ @_+137$M_ @_^,&Well Wires/ Confinement/ Lasers/ Boxes&$M_ @_1820sical Review B-Condensed Matter"=)t Article@_|l@_d|1989@_|l@_d|40@_|lsical Review B-Condensed Matter"=)t Article@_|l@_d|1989@_|l@_d|40@_|lsical Review B-Condensed Matter"=)t Article@_|l@_d|1989@_|l@_d|40@_|ly Resolved Cathodoluminescence Spectra of Ingan Quantum WellsEp=t07.4.2K=t Applied Physics Lettersp=t Ar$TN~ 5>@$Chichibu, S.//Wada, K.//Nakamura, S.$p=tSci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba 278,Japan ; Nippon Telegraph & Tel Publ Corp,Syst Elect Labs,Cpd Semicond Mat Res,Atsugi,Kanagawa 24301,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Anan,Tokushima 774,Japanp=tESpatially Resolved Cathodoluminescence Spectra of Ingan Quantum WellsEp=t07.4.2K=t Applied Physics Lettersp=t Article^@_gi@_i^ Oct 20, 1997 ^@_gi@_i^71^@_gi@_i^16^@_gi@_i^ 2346-2348 ^@_gi@_i^15^@_gi@_i^%B\\As01mesant\Procite Databases\WCS\Articles\Chichibu S 1997 10.pdfB^@_gi@_i^*Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized 5>h1?YShikanai, A.//Azuhata, T.//Sota, T.//Chichibu, S.//Kuramata, A.//Horino, K.//Nakamura, S.Y 5=v Waseda Univ,Dept Elect Elect & Comp Engn,Shinjuku Ku,3-4-1 Ohkubo,Tokyo 169,Japan ; Sci Univ Tokyo,Fac Sci & Technol,Noda,Chiba 278,Japan ; Fujitsu Labs Ltd,Opt Semicond Devices Lab,Atsugi,Kanagawa 24301,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Tokushima 774,Japan  5=vGBiaxial Strain Dependence of Exciton Resonance Energies in Wurtzite GanG 5=v01.4.4 Excitonstonsj^N~T.SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially integrated CL peak consisted of emissions from complementary real spaces, and the area was smaller than 60 nm in lateral size. (C) 1997 American institute of Physics.^@_gi@_i^+132^@_gi@_i^,Laser^@_gi@_i^ 644705>@YShikanai, A.//Azuhata, T.//Sota, T.//Chichibu, S.//Kuramata, A.//Horino, K.//Nakamura, S.Y 5=v Waseda Univ,Dept Elect Elect & Comp Engn,Shinjuku Ku,3-4-1 Ohkubo,Tokyo 169,Japan ; Sci Univ Tokyo,Fac Sci & Technol,Noda,Chiba 278,Japan ; Fujitsu Labs Ltd,Opt Semicond Devices Lab,Atsugi,Kanagawa 24301,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Tokushima 774,Japan  5=vGBiaxial Strain Dependence of Exciton Resonance Energies in Wurtzite GanG 5=v01.4.4 Excitons 5=v Journal of Applied Physics 5=v Article$M_@_ Jan 1, 1997 $M_@_`%)t=?07.1.7HC Kroger, F.A. HC#The Chemistry of Imperfect Crystals#HC Amsterdam HC0 North-Holland HC01964HC0%NoneHC0 64490ncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(ncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(ncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(%UAqN~,d.Electronics#(=tt ArticleX$M_ac@_cX1994 FebX$M_ac@_cX30X$M_ac@_cX2X$M_ac@_cX511-523X$M_ac@_cX%>\\As01mesant\Procite Databases\WCS\Articles\Zah CE 1994 02.pdf>X$M_ac@_cX*oDesign considerations for fabricating highly efficient uncooled semiconductor lasers are discussed. The parameters investigated include the temperature characteristics of threshold current, quantum efficiency, and modulation speed. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the AlxGayIn1-x-y As/InP material system instead of the conventional GaxIn1-xAsyP1-y/InP material system. To reduce the transparency current and the carrier-density-dependent loss due to the intervalence-band absorption, strained-layer quantum wells a re chosen as the active layer. Experimentally, 1.3-mum compressive-strained five-quantum-well lasers and tensile-strained three-quantum-well lasers were fabricated using a 3-mum wide ridge-waveguide l aser structure. For both types of lasers, the intrinsic material parameters are found to be similar in magnitude and in temperature dependence if they are normalized to each well. Specifically, the co;1?zHLevine, B. F. //Bethea, C. G. //Hasnain, G. //Walker, J. //Malik, R. J. Hh =(t$At&T Bell Labs/Murray Hill//Nj/07974$h =(toHigh-Detectivity D-Star = 1.0x1010 Cm Square-Root-Hz/W GaAs AlGaAs Multiquantum Well Lambda = 8.3 Mu-M Infraredoh =(t11.3.3h =(^N~$i.=@Zah, C. E. //Bhat, R. //Pathak, B. N. //Favire, F. //Lin, W. //Wang, M. C. //Andreadakis, N. C. //Hwang, D. M. //Koza, M. A. //Lee, T. P. //Wang, Z. //Darby, D. //Flanders, D.//Hsieh, J. J. (=ttVBellcore,Photon Device Res Grp/Red Bank//Nj/07701 ; Lasertron Inc/Burlington//Ma/01803V(=ttzHigh-Performance Uncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(=tt(=tt(=tt(=tt(=tt(=tt(=tt(=ttD(=tt10.2.1(=tt #IEEE Journal of Quantum Electronics#(=tt ArticleX$M_ac@_cX1994 FebX$M_ac@_cX30X$M_ac@_cX2X$M_ac@_cX511-523X$M_ac@_cX%>\\As01mesant\Procite Databases\WCS\Articles\Zah CE 1994 02.pdf>X$M_ac@_cX*o;1?zHLevine, B. F. //Bethea, C. G. //Hasnain, G. //Walker, J. //Malik, R. J. Hh =(t$At&T Bell Labs/Murray Hill//Nj/07974$h =(toHigh-Detectivity D-Star = 1.0x1010 Cm Square-Root-Hz/W GaAs AlGaAs Multiquantum Well Lambda = 8.3 Mu-M Infraredoh =(t11.3.3h =(h =(t11.3.3h =(^N~ yl.t.th =(t Applied Physics Lettersh =(t ArticleS$M_\^@_^S 1988 JUL 25 S$M_\^@_^S53S$M_\^@_^S4S$M_\^@_^S296-298S$M_\^@_^S%A\\As01mesant\Procite Databases\WCS\Articles\Levine BF 1988 07.pdf,S$M_\^@_^SS$M_\^@_^S+150S$M_\^@_^S4730i.=@Mori, N. //Ando, T. p=ptԫuOsaka Univ,Dept Electr Engn,2-1 Yamada Oka/Suita/Osaka ; Univ Tokyo,Inst Solid State Phys,Minato Ku/Tokyo 106//Japanup=ptԫIElectron Optical-Phonon Interaction in Single and Double HeterostructuresIp=ptԫ03.2.1p=ptԫ "Physical Review B-Condensed Matter"p=ptԫ Article$M_@_| 1989 Sep 15=ptԫ=ptԫ40$M_@_|9$M_@_| 6175-6188 $M_@_|%>\\As01mesant\Procite Databases\WCS\Articles\Mori N 1989 09.pdf,@/hH9XXF=ptԫ=ptԫ+326$M_@_|1300;1?6Macdonald, A. H. //Platzman, P. M. //Boebinger, G. S. 6=@r0̬SIndiana Univ,Dept Phys/Bloomington//in/47405 ; at&T Bell Labs/Murray Hill//Nj/07974Csi)YDL;@(Neave, J. H. //Blood, P. //Joyce, B. A. (*=P/v 'Philips Res Labs/Redhill/Surrey/England'*=P/v bCorrelation Between Electron Traps and Growth-Processes N-GaAs Prepared by Molecular-Beam Epitaxyb*=P/v 07.1.7H =P/v  Applied Physics Letters*=P/v  Article$M_,d@_\ 1980$M_,d@_\ 36$M_,d@_\ 4$M_,d@_\ 311-312$M_,d@_\ %@\\As01mesant\Procite Databases\WCS\Articles/Neave JH 1980 02.pdf@$M_,d@_\ +109%$M_,d@_\ 4840')<@6Koster, G.F.//Slater, J.C.?=$sXSimplified Impurity Calculation?=$sX,01.4.3 "Deep" Localized-Wave-Function Levels,?=$sX Physical Review?=$sX1954$M_TE@_ERQT96$M_TE@_ERQT 1208-1123=$sX=$sX%>\\As01mesant\Procite Databases\WCS\Articles/Koster GF 1954.pdf>$M_TE@_ERQT61750ears Ago8x=v84X10.0x=v84X IEEE LEOS Newsletterx=v84X1-14>=v84X%L\\Aeron\Procite Databases\WCS\Articles\Dupuis RD LEOS Newsletter 2003 02.pdfL$M_')@_):64500JK{N~t.<+D5$M_D4@_,V+D728-731$M_D4@_,V+D%A\\As01mesant\Procite Databases\WCS\Articles\Murphy SQ 1994 01.pdfA$M_D4@_,V+D*SThe nu = 1 quantum Hall effect in bilayer 2D electron systems is shown to continuously evolve from a regime dominated by single-particle tunneling into one where interlayer Coulomb interactions stabilize the state. This many-body integer quantum Hall state exhibits a phase transition to a compressible state at large layer separation. We also find evidence for an intriguing and unexpected second transition to a new incompressible state, driven by an in-plane magnetic field. While the origin of this last result is unclear, we discuss a recent model of a pseudospin textural phase transition.S$M_D4@_,V+D+127$M_D4@_,V+D,C2-Dimensional Electron-Systems/ Magnetic-Field/ Energy- Well/ StateC$M_D4@_,V+ D4820ween Electron Traps and Growth-Processes N-GaAs Prepared by Molecular-Beam Epitaxyb*=P/v 07.1.7H =P/v  Applied Physics Lettersween Electron Traps and Growth-Processes N-GaAs Prepared by Molecular-Beam Epitaxyb*=P/v 07.1.7H =P/v  Applied Physics Letterslized-Wave-Function Levels,?=$sX Physical Review?=$sX1954$M_TE@_ERQT96$M_TE@_ERQT 1208-1123=$sX=$sX%9\\Aeron\Procite Databases\WCS\Articles/Koster GF 1954.pdf9$M_TE@_ERQT61750QT617503N~ <T+#>@ Dupuis, R. D. x=v84X!The University of Texas at Austin!x=v84X8The Diode Laser -- the First Thirty Days Forty Years Ago8x=v84X10.0x=v84X IEEE LEOS Newsletterx=v84X1-14>=v84X%Q\\As01mesant\Procite Databases\WCS\Articles\Dupuis RD LEOS Newsletter 2003 02.pdfQ$M_')@_):64500{),>h1?E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEHC Ziman, J.M. HCElectrons and PhononsHCOxfordHC0Clarendon PressHC01960HC0%NoneHC0) p. 56: Despite its obvious crudity, the Debye approximation has the great advantage of supreme simplicity. If any one parameter is required to measure the energy scale of the vibrations of a solid, the Debye temperature is the most appropriate. If any one function is required to represent the distribution of lattice frequencies, the function D = 3(n2/nD2 (0?99:=Xy.Stroscio, M.A.//Dutta, Mitra :=Xy.:=Xy.:=XyyN~ \.Phonons in Nanostructures:=Xy. Cambridge $M_ @_|$ECambridge University Press$M_ @_|$E2001$M_ @_|$E%None$M_ @_|$E)p. 14: From the relation wTO2 + 4p[Ne*2/einf][1/m + 1/M] = wLO2, it follows that wTO = wLO for zone-center phonons in materials with e* = 0; this is just as observed in non-polar materials such as silicon. In polar materials such as GaAs there is a gap between wTO and wLO, associated with the Coulomb energy density arising from e*. p. 41: However, TO phonons produce displacements of the planes of charge such that they remain at fixed distances from each other; that is, the charge planes 'slide' by each other but the normal distance between nplanes of opposite charge does not change. So, TO modes make negligible contributions to P(r) [ the polarization]. p. 42: The Frohlich interaction between electrons and longitudinal optical phonons is proportional to e*. p. 46: There are two anharmonic phonon effects. The first is the Klemens process, in which a zone center LO phonon decays into two LA phonons of opposite k vector. The second is the Ridley channel, in which an LO phonon decays into a TO and an LA phonon. The Ridley channel is expected to dominate in materials, like GaN, in which the zone-center LO phonon energy is more than twice the energy of any available acoustic phonons.$M_ @_|$E Symbol_ @_|$Eymbol_  @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|^N~|.HF ArticleHFP1991HFP 79HFP5HFP702-712HFP%=\\As01mesant\Procite Databases\WCS\Articles/Davis RF 1991.pdf=HFP*Continued development and commercialization of optoelectronic devices, including light-emitting diodes and semiconductor lasers produced from III-V gallium arsenide-based materials, has also generated interest in the much wider bandgap semiconductor monoitride materials containing boron, aluminum, gallium, and indium. The majority of the studies have been conducted on pure gallium nitride thin films having the wurtzite structure, and this emphasis continues to the present day. However, recent research has resulted in the fabrication of p-n junctions in cubic boron nitride, the deposition of cubic gallium nitride, as well as the fabrication of multilayer heterostructures and the formation of thin film solid solutions. Chemical vapor deposition (CVD) has usually been the technique of choice for thin film f %r->>99HCSrivastava, G.P.HCThe Physics of PhononsHCBristol HC0IOP Publishing LtdHC01990HC0%NoneHC0( 0-8527 :4-153-7 HC064530 S>h1?&5Dalcorso, A//Posternak, M//Resta, R//Baldereschi, A  X=r X=r X=r N~;$%%t;%%&* &%&|;&;D& 4&,&$&;%;L&<&;\&T&d&;t&;l&|&;&&&&&&;;&;&&&&;&;&&+&&' ' ;'$' ';";#,'&4'1;<<'ED's<vT'x\'zd'|l'~t'+|' <''<'' ' < ' ' ' $<$ '* '@ 'C 'O ,<R '\ 'm 4<u ' ( '% (B  (L )a <<f (h $( ) 4( ,( <(k D<m L(t L< D( T( \( d(X T< \< t( l( d<2 ( ( ( ) ( ( ( |*|(%(>(> l<?t<( ((|<((<(+(() )<h)$)<)R*4),)<)D) <L)() )) )$),)*4)<)D)L)zpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0& \t,Y \D| 2, #$d8L';vlbXND:0&dl $Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$E ymbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbo l_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_  @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E64520p<@ Davis, R. F.  HFDN Carolina State Univ,Dept Mat Sci & Engn,Box 7907/Raleigh//Nc/27695DHF=III-V Nitrides for Electronic and Optoelectronic Applications=HF12.0HF Proceedings of the IEEEHF %r->>99HCSrivastava, G.P.HCThe Physics of PhononsHCBristol HC0IOP Publishing LtdHC01990HC0%NoneHC0( 0-8527 :4-153-7 HC064530 S>h1?&5Dalcorso, A//Posternak, M//Resta, R//Baldereschi, A  X=r X=r X=r =r X=r  y 9~. @_< T*We demonstrate the feasibility of ab initio studies of piezoelectricity within an all-electron scheme. The focus of our analysis is on wurtzite ZnO; for comparison, some results  are also presented for the related materials BeO and ZnS. The comparative study is performed in order to understand the microscopic origin of the peculiar behavior of ZnO, whose piezoelectric respons  e is the strongest among the tetrahedrally bonded semiconductors. In all such materials, the piezoelectric effect results from two different terms of opposite sign: these are usually referred to as th  e ''clamped-ion'' and the ''internal-strain'' contributions. Cancellation amongst them is least effective in ZnO, where the dominant effect is due to a rigid-ion-like mechanism. Furthermore, we comput  e the spontaneous polarization of ZnO and we discuss the puzzling agreement between our calculated value and a very indirect experimental estimate of the same quantity.$M_TD@_<   T+19$M_TD@_< T,lABINITIO CALCULATION/ ELECTRIC POLARIZATION/ III-V-SEMICONDUCTORS/ PHASE/ PYROELECTRIC BEO/ SOLIDS/ WURTZITEl$M_TD@_<  T64550 of Super-Lattice Band-Structure in the Envelope-Function Approximation;8=0vS8=0vS$8=0vS04.2.1 of Super-Lattice Band-Structure in the Envelope-Function Approximation;8=0vS8=0vS$8=0vS04.2.1;Ecole Norm Super,Cnrs,Groupe Phys Solides,24 Rue Lhomond/F-;=xtCSuper-Lattice Band-StruN~2|. S>@&5Dalcorso, A//Posternak, M//Resta, R//Baldereschi, A  X=r X=r X=r  X=r X=r X=r  X=r X=r X =r GAb-initio study of piezoelectricity and spontaneous polarization in ZnOGX=r 01.2.3 PiezoelasticityX=r  "P hysical Review B-Condensed Matter"X=r 1994$M_TD@_< T50$M_TD@_< T15$M_TD@_<  T 10715-10721 $M_TD@_< T%C\\As01mesant\Procite Databases\WCS\Articles\Dal Corso A 1994 10.pdfC$M_TD@_< T' 0163-1829 $ M_TD@_< T)yEnglish PHB Ecublens, Inst Romand Rech Number Phys Mat, Ch-1015 Lausanne, Switzerland PP124 Copyright 2003 SciSearch Plus$M_TD@_< T $M_TD@_< T$M_TD@_< T$M_TD@_< T$M_TD@_< T>$M_TD@_< T$$M_TD p;1?x Bastard, G.  8=0vS7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/1059878=0vSaTheoretical Investigations of Super-Lattice Band-Structure in the Envelope-Function Approximation;8=0vS8=0vS$8=0vS04.2.1C^N~ .  in a Quantum Well: a Simple-Model<N=q[03.1.1N=q[ "Physical Review B-Condensed Matter"N=q[  Article$M_@_{ 1981 Oct 15 $M_@_{24$M_@_{8$M_@_{ 4714 -4722 $M_@_{%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1981 10.pdfA$M_@_{+585$M_@_{  2700i.=@`Asbeck, P. M. //Chang, M. C. F. //Higgins, J. A. //Sheng, N. H. //Sullivan, G. J. //Wang, K. C. `=`s1Rockwell Int Sci Ctr,Bipolar Transistors/Thousand1=`sTGaAlAs/GaAs Heterojunction Bipolar-Transistors: Issues and Prospects for ApplicationT=`s09.2.2=`s %IEEE Transactions on Electron Devices%=`s Article$M_t-.@_.\ 1989 October $M_t-.@_.\36$M_t-.@_.\10$M_t-.@_.\ 2032-2042 $M_t-.@_.\%A\\As01mesant\Procite Databases\WCS\Articles\AsMbeck PM 1989 10.pdfA+126$M_t-.@_.\207081 Sao Paulo//Brazilt*=v 3Electronic States in Semiconductor Heterostructures3*=v 02.3.1*=v 81 Sao Paulo//Brazilt*=v 3Electronic States in Semiconductor Heterostructures3*=v 02.3.1*=v $/_~.p;@ )Bastard, G. //Brum, J. A. //Ferreira, R. )*=v tEcole Norm Super,Dept Phys,24 Rue Lhmond/F-75231 Paris ; Univ Estadual Campinas,Dept Fis/Br-13081 Sao Paulo//Brazilt*=v 3Electronic States in Semiconductor Heterostructures3*=v 02.3.1*=v  ;Solid State Physics-Advances in Research and Applications ;;*=v  Review$M_@_41991$M_@_444$M_@_4230-415$M_@_4%>\\As01mesant\Procite Databases\WCS\Articles/Bastard G 1991.pdf,$M_@_4$M_@_4+220$M_@_4,Quantum-Well Structures/ Gaas-Alas Superlattices/ Binding-Energy/ Envelope-Function Approximation/ Interface Roughness Scattering/ Valence-Band Discontinuity/ Short- Superlattices/ Low-Temperature Mobility/ Hgte-Cdte Effective-Mass Equation$M_@_42720=t$< J.Phys.Chem.Solids.h=t$<1957c$M_,ln@_nB,c1c$M_,ln@_nB,c249-261=t$< J.Phys.Chem.Solids.h=t$<1957c$M_,ln@_nB,c1c$M_,ln@_nB,c249-261o q?Variational Calculations on a Quantum Well in an Electric-Field?=o q03.3.2K=o qK=o qh=t$<!01.3.1 Electron Band Calculations!hDxN~H.$M_$@_kd6$M_$@_kd 3241-3245 $M_$@_kd%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1983 09.pdfA\$M_$@_kd+457$M_$@_kd2740p;@ 7Bastard, G. //Mendez, E. E. //Chang, L. L. //Esaki, L. 7x;=q97Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987x;=q9'Exciton Binding-Energy in Quantum Wells'x;=q903.1.3x;=q9 "Physical Review B-Condensed Matter"x;=q9 Article$M_@_Ld 1982 Aug 15 $M_@_Ld26$M_@_Ld4$M_@_Ld 1974-1979 $M_@_Ld%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1982 08.pdfA$M_@_Ld+520$M_@_Ld2750Vacuum Science & Technology a-Vacuum Films6P= s Article$M_@_|1989$M_@_| 7$Vacuum Science & Technology a-Vacuum Films6P= s Article$M_@_|1989$M_@_| 7$Vacuum Science & Technology a-Vacuum Films6P= s Article$M_@_|1989$M_@_| 7$HxB-10623 Berlin//Germany_='sz̬;Spontaneous Ordering of Arrays of Coherent Strained Islands;='sz̬07.4.2='sz̬ Physical Review Letters='sz̬ Article$M_@_̾ Oct 16, 1995 $M_@_̾75$M_@_̾16$M_@_̾ 2968-2971 $M_@_̾%C\\As01mesant\Procite Databases\WCS\Articles\Shchukin VA 1995 10.pdfC='sz̬*]The energetics of an array of three-dimensional coherent strained islands on a lattice-mismatched substrate is studied. The contribution of the edges of islands to the elastic relaxation energy always has a minimum as a function of the size of an island L, and the total energy E(L) may have a minimum at an optimum size L(opt). Among different arrays of islands on the (001) surface of a cubic crystal, the total energy is minimum for the 2D periodic square lattice with primitive lattice vectors along ''soft'' directions [100] and [010]. This is a stable array of islands which do not undergo ripening.]$M_@_̾+193$M_@_̾,Surfaces/ Growth/ Shape/ Ge$M_@_ 5030<1?Thompson, George H. B.8m=xsGallium Arsenide Lasers|=xs|=xs10.1.2App. Phys. Lett., Vol. 16, pp. 326-327, April, 1970 Rupprecht et al: Stimulated Emission from Ga Al As Diodes at 77.degree.K,IEEE Jour. of Quant. Elect., Vol. QE4, pp. 35, Jan. 1968N~{p<@ h1?DLuttinger, J.M.//Kohn, W.(<=ФtHm<:Motion of Electrons and Holes in Perturbed Periodic Fields:(<=ФtHm<!01.3.1 Elec/=x5tFdMQuantized Conductance o^N~<.;@xVanwees, B. J. //Kouwenhoven, L. P. //Vanhouten, H. //Beenakker, C. W. J. //Mooij, J. E. //Foxon, C. T. //Harris, J. J. x/=x5tFdDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England/=x5tFdMQuantized Conductance of Magnetoelectric Subbands in Ballistic Point Contacts5/=x5tFd /=x5tFd/=x5tFd04.4.3/=x5tFd "Physical Review B-Condensed Matter"/=x5tFd Article$M_ D @_< D 1988 Aug 15 $M_ D @_< D38$M_ D @_< D5$M_ D @_< D 3625-3627 $M_ D @_< D%B\\As01mesant\Procite Databases\WCS\Articles\Vanwees BJ 1988 08.pdf,$M_ D @_< D$M_ D @_< D+113$M_ D @_< D5140ԫDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandh(=jr ԫԫDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandh(=jr ԫ.62$M_@_|z.10$M_@_|z. 1181-1184 $M_@_|z.%=\\Aeron\Procite Databases\WCS\Articles\Vanwees BJ 1989 03.pdf'@/hH9XXF c^VN~H;@(Vanwees, B. J. //Willems, E. M. M. //Harmans, C. J. P. M//Beenakker, C. W. J. //Vanhouten, H. //Williamson, J. G. //Foxon, C. T. //Harris, J. J. h(=jr ԫDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandh(=jr ԫYAnomalous Integer Quantum Hall-Effect in the Ballistic Regime With Quantum Point ContactsYh(=jr ԫ04.4.3h(=jr ԫ Physical Review Lettersh(=jr ԫ Article$M_@_|z. 1989 Mar 6 $M_@_|z.62$M_@_|z.10$M_@_|z. 1181-1184 $M_@_|z.%B\\As01mesant\Procite Databases\WCS\Articles\Vanwees BJ 1989 03.pdf,@/hH9XXF(=jr ԫ(=jr ԫ+142$M_@_|z.5160;1?<_Waugh, F. R. //Berry, M. J. //Mar, D. J. //Westervelt, R. M. //Campman, K. L. //Gossard, A. C. _.=vbjHarvard Univ,Div Appl Sci/Cambridge//Ma/02Review Letters.=vbj Article$M_@_vm Jul 24, 1995 $M_@_vm75$M_@_vm4$M_@_vm705-708$M_@_vm%;\\Aeron\Procite Databases\WCS\Articles\Waugh FR 1995 07.pdf;$M_@_vm*We report low-temperature tunneling measurements at zero magnetticles\Waugh FR 1995 07.pdf;$M_@_vm*We report low-temperature tunneling measurements at zero magnet^zN~2.;@<_Waugh, F. R. //Berry, M. J. //Mar, D. J. //Westervelt, R. M. //Campman, K. L. //Gossard, A. C. _.=vbjHarvard Univ,Div Appl Sci/Cambridge//Ma/02138 ; Harvard Univ,Dept Phys/Cambridge//Ma/02138 ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106.=vbjPSingle-Electron Charging in Double and Triple Quantum Dots With Tunable CouplingP.=vbj04.4.3.=vbj Physical Review Letters.=vbj Article$M_@_vm Jul 24, 1995 $M_@_vm75$M_@_vm4$M_@_vm705-708$M_@_vm%@\\As01mesant\Procite Databases\WCS\Articles\Waugh FR 1995 07.pdf@$M_@_vm*We report low-temperature tunneling measurements at zero magnetic field through double and triple quantum dots with adjustable interdot coupling, fabricated in a GaAs/AlGaAs heterostructure. As the coupling is increased, Coulomb blockade conductance peaks split into two (double dot) or three (triple dot) peaks each. The splitting tracks closely the measured tunnel conductance and experimentally determines the total interaction energy. Coupled double and i.=1?Aspnes, D. E. //Studna, A. A. &=u& )Bell Commun Res Inc/Murray Hill//Nj/07974)&=u& JAnisotropies in the Above Band-Gap Optical-Spectra of Cubic SemiconductorsJ&=u& 06.1.2&=u&  Physical Review Letters&=u& 706518z=msj706518t^N~.݊(=@\\As01mesant\Procite Databases\WCS\Articl݊(=Ү1?Chang, R. P. H.=uU=uU=uU-Hydrogen etching of semiconductors and oxides-=uU08.2.3=uU)Bell Telephone Laboratories, Incorporated)=uU706518=uU US4361461 =uUUS=uU 11/30/1982 =uUCA1184478A1 DE3209066A1 DEBr es\Baba T 1991 06.pdf>$M_|@_, *The spontaneous emission factor of a microcavity DBR surface-emitting laser has been theoretically obtained to investigate the possibility of thresholdless lasing operation. First, we obtained the formulas expressing the spontaneous emission in a three-dimensional microcavity. By introducing the distribution of mode density in wavevector space, it was clearly shown that the radiation pattern of spontaneous emission is deeply modified by the microcavity and is different from that in free space. Based on this result, the spontaneous emission factor and the emission lifetime were calculated as a function of emission spectral width and the size of the active region. It was found that the spontaneous emission factor exceeds 0.1, even though the spectral width is as large as 30 nm when the transverse size is smaller than 0.5-mu-m and the DBR reflectivity is larger than 90%. Its upper limit of 0.5 is determined by the polarizat ion probability of a linear polarized mode. In this condition, all of the energy from the spontaneous emission is taken out in the longitudinal direction. In addition, the averaged spontaneous emissio n lifetime in the microcavity decreases to 0.09 times that in a large bulk if the spectral width is less than 0.5 nm, for example, by employing the excitonic transition. The enhancement of the spontan eous emission factor and the reduction of lifetime may lead to thresholdless lasing operation, high efficiency, high speed, and good spatial coherency of the surface-emitting laser.$M_| @_, +122$M_|@_, ,Cavity/ Array/ Gain$M_|@_, 2290U-Hydrogen etching of semiconductors and oxidesGuU+22=uU63180!N~  ݊(=@Chang, R. P. H.=uU=uU=uU-Hydrogen etching of semiconductors and oxides-=uU08.2.3=uU)Bell Telephone Laboratories, Incorporated)=uU706518=uU US4361461 =uUUS=uU 11/30/1982 =uUCA1184478A1 DE3209066A1 DE3209066C2 FR2501909A1 FR2501909B1 GB2094720A1 GB2094720A GB2094720B2 GB2094720B JP57162338A2 NL8201041A US4361461=uUEUS3940506 US4094732 US4227975 US4266986 US4284689 US4285762 US4285763E=uU"Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide by W. Kern, RCA Review, vol. 39, pp. 278-294, 1978.; Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF.sub.4 -H.sub.2 by L. M. Ephrath, Journal of the El"=uU"US4544444 US4645683 US4663820 US4731158 US4778562 US4778776 US4965173 US4981811 US4992134 US5028560 US5133830 US5145554 US5194119 US5236537 US5286340 US5310697 US5376591 US5399230 US5484749 US5626921 US5861059 US6379576=uU%;\\As01mesant\Procite Databases\WCS\Patents\US04361461__.pdf;=uU'."H01L 21/306, B44C 1/22, C03C 15/0, C03C 25/6".L=uU+22=uU63180 i.=w1?3People, R. //Wecht, K. W. //Alavi, K. //Cho, A. Y. 3b=0u'Bell Tel Labs Inc/Murray Hill//Nj/07974'b=0uMeasgs of the Optical CommuN~. i.=@3People, R. //Wecht, K. W. //Alavi, K. //Cho, A. Y. 3b=0u'Bell Tel Labs Inc/Murray Hill//Nj/07974'b=0uMeas urement of the Conduction-Band Discontinuity of Molecular-Beam Epitaxial Grown In0.52al0.48as/In0.53ga0.47as, N-N Heterojunction by C-V Profilingb=0u02.1.3 A pplied Physics Lettersb=0u Article#@_@_ܺ,!1983#@_@_ܺ,!43#@_@_ܺ, !1#@_@_ܺ,!118-120#@_@_ܺ,!%B\\As01mesant\Procite Databases\WCS\Articles/People R 1983 0007.PDFB+215#@_ @_ܺ,!1480!݊(=@Umeda, J.//Kajimura, Takashi!=.q8!=.q8!=.q8Semiconductor laser device!!=.q810.5.5!=.q8 Hitachi, Ltd. !=.q8252865!=.q8 US4369513" Santa Barbara,Dept Elect & Comp Engn/Santa5 }=(r`Q[Investigation of Reactive Ion Etching Induced Damage in GaAs-AlGaAs Quantum Well Structures[ }"=(r`Q08.2.2y=(r`Qy=(r`Q (Journal of Vacuum Science & Technology B( }=(r`Q Article"$M_L@_|4~ 1988 NOV-DEC $M_L@_|4~6$M_L@_|4~6$M_L@_|4~ 1906-1910 ?oN~/..!S04369513__.pdf;!=.q8' H01S 3/19 !=.q8+28!=.q863190";@ZWong, H. F. //Green, D. L. //Liu, T. Y. //Lishan, D. G. //Bellis, M. //Hu, E. L. //Petroff, P. M. //Holtz, P. O. //Merz, J. L.  }=(r`Q5Univ Calif" Santa Barbara,Dept Elect & Comp Engn/Santa5 }=(r`Q[Investigation of Reactive Ion Etching Induced Damage in GaAs-AlGaAs Quantum Well Structures[ }"=(r`Q08.2.2y=(r`Qy=(r`Q (Journal of Vacuum Science & Technology B( }=(r`Q Article"$M_L@_|4~ 1988 NOV-DEC $M_L@_|4~6$M_L@_|4~6$M_L@_|4~ 1906-1910 "$M_L@_|4~%?\\As01mesant\Procite Databases\WCS\Articles\Wong HF 1988 11.pdf?$M_L@_|4~+117$M_L@_|4~5210#<Ү1?#Kirkman, Earl L.//Bowers, Gerald M.#=xsContinuous Deposition Reactor=xs08.3.1==x#s US3785853 =xscUS2295928 US2376980 US2579737 US3147135 US3576247 US3598082 US3645545 US3659551 US3672948 US3709672c=xs#"US4512391 US4664743 US4901667 US4913090 US5258075 US5458918 US5730802 US5819684 US5976259 US5997588 US6204197 US6230650 US4681773 US4693211 US4793911 US4798166 US4941429 US5061356 US55251=RsȒ Article/ $M_8 : @_: z=/ 1980/ $M_8 : @_: z=/ 51@_: z=/ 519i)Y.4$;@d8Wood, C. E. C. //Metze, G. //Berry, J. //Eastman, L. F. 8=RsȒdCornell Univ,Dept Elect Engn/Ithaca//Ny/14853 ; Cornell Univ,Natl Res & Resources$ Facility Submicrond=RsȒIComplex Free-Carrier Profile Synthesis by Atomic-Plane Doping of MBE GaAsI=RsȒ06.3.3$=RsȒ Journal of Applied Physics=RsȒ Article/ $M_8 : @_: z=/ 1980/ $M_8 : @_: z=/ 51$/ $M_8 : @_: z=/ 1/ $M_8 : @_: z=/ 383-387/ $M_8 : @_: z=/ %@\\As01mesant\Procite Databases\WCS\Articles/Wood CEC 1980 01.pdf@$\=RsȒ+179/ $M_8 : @_: z=/ 5220%~o>@ VShan, W. //Schmidt, T. J. //Yang, X. H. //Hwang, S. J. //Song, J. J. //Goldenberg, B. V =wOklahoma State Univ,Dept Phys/Stillwater//Ok/74078 %; Oklahoma State Univ,Ctr Laser Res/Stillwater//Ok/74078 ; Honeywell Inc,Ctr Technol/Bloomington//Mn/55420 =wfTemperature-Dependence of Interband-Transitions in %GaN Grown by Metalorganic Chemical-Vapor-Depositionf =w01.3.3 Electron Bandgaps =w Applied Physics Letters %=w Article$M_()@_) Feb 20, 1995 $M_()@_) 66$M_()@_)8$M_(&<j=?%Collins, Neil E.//Neville, Raymond R.%0m=xs,Solid State Lamp ConstructionH=xs,H=xs,=xs,"RN~2+,' ArticleHF Jan 1, 1993 HF 73HF1HF'189-204HF%A\\As01mesant\Procite Databases\WCS\Articles/Powell RC 1993 01.pdfAHF*S Reactive-ion molecular-beam epitaxy ha's been used to grow epitaxial hexagonal-structure alpha-GaN on Al2O3(0001) and Al2O3(0112BAR) substrates and metastable zinc-blende-structure beta-GaN on MgO(001) under the following conditions: growt'h temperature T(s) = 450-800-degrees-C; incident N2+/Ga flux ratio J(N2+)/J(Ga) = 1-5; and N2+ kinetic energy E(N2+) = 35-90 eV. The surface structure of the alpha-GaN films was (1 X 1), with an almos't-equal-to 3% contract ion in the in-plane lattice constant for films grown on Al2O3(0001), while the beta-GaN films exhibited a 90-degrees-rotated two-domain (4 X 1) reconstruction. Using a combinati'on of in situ reflection high-energy electron diffraction, double-crystal x-ray diffraction, and cross-sectional transmission electron microscopy, the film/substrate epitaxial relationships were deter' mined to be: (0001)GaN parallel-to (0001)Al2O3 with [2110BAR]GaN parallel-to [1100BAR]Al2O3 and [1100BAR]GaN parallel-to [1210BAR]Al2O3, (2110BAR)GaN parallel-to (0112BAR)Al2O3 with [0001]GaN parallel' -to [0111BAR]Al2O3 and [0110BAR]GaN parallel-to [2110BAR]A12O3, and (001)GaN parallel-to (001)MgO with [001]GaN parallel-to [001]MgO. Films with the lowest extended defect number densities (n(d) congr(;h1?,BBosio, C. //Staehli, J. L. //Guzzi, M. //Burri, G. //Logan, R. A. B@Z=PoRgEcole Polytech Fed Lausanne,Inst Phys Appl,Ph Ecublens/Ch- ; Univ Lausa(_\Ext:5420|^N~2$.' -to [0111BAR]Al2O3 and [0110BAR]GaN parallel-to [2110BAR]A12O3, and (001)GaN parallel-to (001)MgO with [001]GaN parallel-to [001]MgO. Films with the lowest extended defect number densities (n(d) congr' uent-to 10(10) cm-2 threading dislocations with Burgers vector a0/3[1120BAR]) and the smallest x-ray-diffraction omega rocking curve widths (5 min) were obtained using Al2O3(0001) substrates, T(s) gre' ater-than-or-equal-to 650-degrees-C, J(N2+)/J(Ga) greater-than-or-equal-to 3.5, and E(N2+) = 35 eV. Higher N2+ acceleration energies during deposition resulted in increased residual defect densities. ' In addition, E(N2+) and J(N2+)/J(Ga) were found to have a strong effect on film growth kinetics through a competition between collisionally induced dissociative chemisorption of N2 and stimulated deso'rption of Ga as described by a simple kinetic growth model. The room-temperature resistivity of as-deposited GaN films grown at T(s) = 600-700-degrees-C with E(N2+) = 35 eV increased by seven orders o'f magnitude, from 10(-1) to 10(6) OMEGA cm, with an increase in J(N2+)/J(Ga) from 1.7 to 5.0. Hall measurements on the more conductive samples yielded typical electron carrier concentrations of 2 X 10'(18) cm-3 with mobilities of 30-40 cm2 V-1 s-1. The room-temperature optical band gaps of alpha-GaN and beta-GaN were 3.41 and 3.21 eV, respectively.S HF+237'HFHF,Vapor-Phase Epitaxy/ Energy Particle Bombardment/ Low-Temperature Growth/ Gallium Nitride Films/ Ain Buffer Layer/ Electrica(;h1?,BBosio, C. //Staehli, J. L. //Guzzi, M. //Burri, G. //Logan, R. A. B@Z=PoRgEcole Polytech Fed Lausanne,Inst Phys Appl,Ph Ecublens/Ch- ; Univ Lausa(_\Ext:5420|^N~+%=w Article$M_()@_) Feb 20, 1995 $M_()@_) 66$M_()@_)8$M_(%)@_)985-987$M_()@_)%>\\As01mesant\Procite Databases\WCS\Articles/Shah W 1995 02.pdf/0=w0=w%0=w+124$M_()@_),JMolecular-Beam Epitaxy/ Thin-Films/ Gallium Nitride/ Silicon/ Diodes/ GaasJ$M_()%@_)3510&<@%Collins, Neil E.//Neville, Raymond R.%0m=xs,Solid State Lamp ConstructionH=xs,H=xs,&12.4.10m=xs,2185500m=xs, US3805347 0m=xs,US0m=xs,& 4/23/1974 0m=xs,6BE0760991A DE2062208A FR2074421A5 GB1338765A US380534760m=xs,'US3596136 US3501676 US3458779 US3510732'&0m=xs,6Roy et al., IBM Tech. Bull., Vol. 7, No. 1, June 1964.60m=xs,"US4019196 US4032963 US4144635 US4253735 US4398240 US4471414 US460'p<=\? 8Powell, R. C. //Lee, N. E. //Kim, Y. W. //Greene, J. E. 8HFUniv Illinois,Coordinated Sci Lab,Dept Mat Sci,1101 W Springfield Ave/Urbana//Il/'61801 ; Univ Illinois,Mat Sci Res Lab/Urbana//Il/61801HFHeteroepitaxial Wurtzite and Zincblende Structure GaN Grown by Reactive-Ion Molecular-Beam Epitaxy : Grat Sci,1101 W Springfield Ave/Urbana//Il/(_\Ext:5420@(_\Ext:5420} =m~..(@_\Ext:5420)<@Caywood, John Millard=`sCharge Coupled Device IR Imager=`s12.3.4=`s)570160=`s US3806729 =`sUS=`s 4/23/1974 =`s) US3806729 =`sUS3484663 US3699339 US3746883=`sSelf-Scanned Image Sensors . . . by Weimer et al., IEEE Trans. on Elect)ron Devices, Nov. 1971, Vol. 18, No. 11, pp. 996-1003 Solid State Imaging Emerges from Charge Transport, RCA Reprint from Electronics, Feb. 28, 1972, written by Kovac et al.=`)s"?US3937942 US4001501 US4178522 US4224521 US4301471 US4315159 US4596930 US4656519 US4935636 US5001530 US5371384 US5430294 US4142925 US4176369 US4409483 US4410811 US4443701 US4471378 US)4496982 US4498105 US4675549 US4737642 US5258619 US5293035 US3883437 US3886359 US4054797 US4061916 US4079507 US4096512 US4115692 US4119841?=`s%;\\As01mesant\Procite) Databases\WCS\Patents\US03806729__.pdf;=`s' G01T 1/24 =`s+32=`s210*=t 83Ultrawide-Band Long-Wavelength P-I-N Photodetectors3=t 811.3.1=t 8 Journal of Lightwave Technology*=t 83Ultrawide-Band Long-Wavelength P-I-N Photodetectors3=t 811.3.1=t 8 Journal of Lightwave TechnologySci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba ; Waseda Univ,Dept Elect rAq17.L+\\As01mesant\Procite Databases\WCS\Articles\Chichibu S 1997 05.pdfB$M_|l@_dW|*Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commer+cially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x < 0.1) was assigned to the recombination of excitons localized at the potential minima originatin+g from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states. (C) 1997 American Institute of Physics.$M+_|l@_dW|+135$M_|l@_dW|,Light-Emitting Diodes/ GaN$M_|l@_dW|2990,݊(=@Tsang, Won-Tien==v+Double barrier double heterostructure laser+==v10.1.1==v,)Bell Telephone Laboratories, Incorporated)==v706518==v US4438446 ==vUS,==v 3/20/1984 ==vCA1182890A1 DE3220214A1 FR2507014A1 FR2507014B1 GB2099624A1 GB2099624A GB2099624B2 GB2099624B JP57199290A,2 NL8202197A US4438446==v US4328469 ==v"Tsang, ""Very Low Current Threshold GaAs-Al.sub.x Ga.sub.1-x As . . ."", Appl. P-݊(=7j=?Kitamura, Takashi/=ppWв/Apparatus for controlling the quantity of light//=ppWв12.6.2i=ppWв US4443695 /=ppWвJP+[~yDT,==v 3/20/1984 ==vCA1182890A1 DE3220214A1 FR2507014A1 FR2507014B1 GB2099624A1 GB2099624A GB2099624B2 GB2099624B JP57199290A,2 NL8202197A US4438446==v US4328469 ==v"Tsang, ""Very Low Current Threshold GaAs-Al.sub.x Ga.sub.1-x As . . ."", Appl. P,hys. Lett., vol. 36, No. 1, Jan. 1, 1980, pp. 11-14.; Tsang et al., ""The Effect of Substrate Temperature . . ."", Appl. Phys. Lett., vol. 36, No. 2, Jan. 15, 1980, pp. 118-120.",==v"US4598306 US4630083 US4634928 US4639275 US4639999 US4671830 US4678989 US4760579 US4766472 US4829357 US4847573 US4865655 US4912533 US4933728 US4947223 US4956682 US4968642 US5027164, US5181084 US5555271==v%;\\As01mesant\Procite Databases\WCS\Patents\US04438446__.pdf;==v'"H01S 3/18, H01S 3/19",S==v+20==v63210-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44IyN~L\-݊(=@Kitamura, Takashi/=ppWв/Apparatus for controlling the quantity of light//=ppWв12.6.2i=-ppWвCanon Kabushiki Kaisha/=ppWв87490/=ppWв US4443695 /=ppWвJP-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44-43695|/=ppWвUS4059833 US4092530/=ppWв"]US4592057 US4605848 US4692884 US4695714 US4710779 US4717925 US4757191 US4809025 US482106-5 US4890288 US4894524 US4935615 US4937799 US4950889 US4958915 US4965444 US4967066 US4978849 US5029245 US5043745 US5105077 US5130524 US5151586 US5159184 US5225850 US5270849 US5282217 US5543611 US556128-5 US5809052 US5946414 US5953690 US6097419 US6100908 US6292206]/=ppWв%;\\As01mesant\Procite Databases\WCS\Patents\US04443695__.pdf;/=ppW.ltilayer avalanche photodetector with energy step backsHp=gsx11.3.2p=gsxAt&T Bell Laboratoriesp=gsx.706518p=gsx US4476477 p=gsxUSp=gsx 10/9/1984 p=gsx.CA1197599A1 DE3371583C0 EP0087299A2 EP0087299A3 EP0087299B1 GB2115610A1 GB2115610A GB2115610B2 GB2115610B GB8304712A0 GB8304712A JP06005784B4 JP58157179A2 US4476477p=2115610A1 GB2115610A GB2115610B2 GB2115610B GB8304712A0 GB8304712A JP06005784B4 JP58157179A2 US4476477p=^N~OT.-}в'"G01D 15/14, G01J 1/32"/=ppWв+35/=ppWв63220.݊(=@,Capasso, F.//Tsang, Won-Tien//Williams, G.F.)p=gsxp=gsxp=gsxHGraded bandgap mu.ltilayer avalanche photodetector with energy step backsHp=gsx11.3.2p=gsxAt&T Bell Laboratoriesp=gsx.706518p=gsx US4476477 p=gsxUSp=gsx 10/9/1984 p=gsx.CA1197599A1 DE3371583C0 EP0087299A2 EP0087299A3 EP0087299B1 GB2115610A1 GB2115610A GB2115610B2 GB2115610B GB8304712A0 GB8304712A JP06005784B4 JP58157179A2 US4476477p=.gsx1US4203124 US4213138 US4231049 US4383269 US43908891p=gsx-"R. J. McIntyre, ""Multiplication Noise in Uniform Avalanche Diodes,"" IEEE Transactions /Bell Labs/Murray Hill//Nj/07974G8=xYp."*Multiple Quantum-Well Reflection Modulator*8=xYp."11.4.18=xYp."/8=xYp." Applied Physics Letters8=xYp." Article@$M_I@_@ 1987 APR 27 @$M_I/@_@50@$M_I@_@17@$M_I@_@ 1119-1121 @$M_I@_@%:\\Aeron\Procite Databases\WCS\Articles\Boy/d GD 1987 04.pdf'@$M_I@_@@$M_I@_@+106@$M_I@_@5470@_@5470Cs3cb.l0US4852111 US4860299 US4862470 US4868838 US4872174 US4887274 US4894836 US4907239 US4987096 US4989213 US5065404 US5181218 US5319661 US5470786 US6060785 US6096571 US6297124 x=s0%;\\As01mesant\Procite Databases\WCS\Patents\US04480331__.pdf;x=s' H01S 3/19 x=s+27x=s0632401;@Brennan, K. //Hess, K. =t7cUniv Illinois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801c1=t7*High-Field Transport in GaAs, InP and InAs*=t7E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE1=t7 Solid-State Electronics=t7 Article$M_@_ <1984$M_@_ <271$M_@_ <4$M_@_ <347-357$M_@_ <%>\\As01mesant\Procite Databases\WCS\Articles/Brennan K 1984.pdf,1{$M_@_ <$M_@_ <+132$M_@_ <5510q<ԫ#Mit,Lincoln Lab/Lexington//Ma/02173#x32=q<ԫAOscillations up to 420 Ghz in GaAs/AlAs Resonant Tunneling DiodesAx3=q<ԫ09.2.4x3=q<ԫ Applied Physics Letters2x3=q<ԫ Article $M_ @_%  1989 Oct 23C=q<ԫC=q<ԫ55 y 9i!dt2;@OBrown, E. R. //Sollner, T. C. L.//Parker, C. D. //Goodhue, W. D. //Chen, C. L. Ox3=q<ԫ#Mit,Lincoln Lab/Lexington//Ma/02173#x32=q<ԫAOscillations up to 420 Ghz in GaAs/AlAs Resonant Tunneling DiodesAx3=q<ԫ09.2.4x3=q<ԫ Applied Physics Letters2x3=q<ԫ Article $M_ @_%  1989 Oct 23C=q<ԫC=q<ԫ55 2$M_ @_% 17 $M_ @_%  1777-1779 $M_ @_% %@\\As01mesant\Procite Databases\WCS\Articles\Brown ER 1989 10.pdf,2}HhH9X2XF2C=q<ԫ+164 $M_ @_% 56403tures followed by a higher temperature growth of the rest of the film. GaN films grown on a single crystalline GaN buffer have the zinc blende structure, while those grown on a polycrystalline or amor3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially grow3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially grow3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially grow3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially growCsN~l.3p<@ YLei, T. //Fanciulli, M. //Molnar, R. J. //Moustakas, T. D. //Graham, R. J. //Scanlon, J. Yc=tBoston Univ,Molec Beam Epitaxy Lab,44 Cummington3 St/Boston//Ma/02215 ; Arizona State Univ,Ctr Solid Sci/Tempe//Az/85287 ; Exxon Res & Engn Co/Annandale//Nj/08801c=tYEpitaxial-Growth of Zinc Blende and Wurtziti3c Gallium Nitride Thin-Films on (001) SiliconYc=t07.5.4c=t Applied Physics Lettersc=t3 Article[$M_,df@_f,[1991[$M_,df@_f,[ 59[$M_,df@_f,[8[$M_,df@_f,[944-9463[$M_,df@_f,[%:\\As01mesant\Procite Databases\WCS\Articles/Lei T 1991.pdf:c=t*Zinc blende and wurtzitic GaN films have been epitaxially3 grown onto (001)Si by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, using a two-step growth process. In this process a thin buffer layer is grown at relatively low te4asmall Quantum-Well Boxes5/=u03.5.1/=u Physical Review Letters/=u Article4U$M_^`@_`dU 1987 Sep 7 U$M_^`@_`dU59U$M_^`@_`dU10U$M_^`@_`dU 1140-1143 U$4M_^`@_`dU%<\\Aeron\Procite Databases\WCS\Articles\Bryant GW 1987 09.pdf'U$M_^`@_`dUU$M_^`@_`dU+165U$M_^`@4_`dU5770|^N~U.5;@Bryant, G. W. 0.=`$uC5Mcdonnell Douglas Corp,Mcdonnell Douglas Res Labs,Pob50.=`$uC0Hydrogenic Impurity States 5in Quantum-Well Wires00.=`$uC03.4.10.=`$uC0.=`$uC "Physical Review B-Condensed Matter"0.5=`$uC Article_$M_hj@_j4_ 1984 Jun 15 _$M_hj@_j4_29_$M_hj@_j4_12_$M_h5j@_j4_ 6632-6639 _$M_hj@_j4_%A\\As01mesant\Procite Databases\WCS\Articles\Bryant GW 1984 06.pdf,_$M_hj@_j4__$M_hj5I@_j4_+124_$M_hj@_j4_578069+41=`s220\\Aeron\Procite Databases\WCS\Patents\US03808435__.pdf6=`s' G01T 1/24 =`s69+41=`s2203883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50169483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50169483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50169483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US501N~|6<@3Buss, Dennis D.//Bate, Robert T.//Kinch, Michael A.3=`s/Infara Red Quantum Differential Detector System=`s6.=`s12.3.1=`s570160=`s US3808435 =`sUS6=`s 4/30/1974 =`s US3808435 =`sUS3660663 US3723642=`s6"US4080532 US4142198 US4467340 US4479139 US4806761 US4868902 US5304500 US5430294 US4142206 US4190851 US4531055 US4536658 US4929913 US4943491 US5828408 US4054797 US4068124 US4213137 US4316103 US44069483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50162343 US5093589=`s%;\\As01mesant\Procite Databases\WCS\Patents\US03808435__.pdf;=`s' G01T 1/24 =`s6>+41=`s2207stkorperforsch,Hochfeld Magnetlab,Bp ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Acad Sci Ussr,Inst Solid State Phys/Chernogolovka ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart7stkorperforsch,Hochfeld Magnetlab,Bp ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Acad Sci Ussr,Inst Solid State Phys/Chernogolovka ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart@_\nOt 1056-1059 $M_td@_\nOt%<\\Aeron\Procite Databases\WCS\Articles\Buhmann H 1990 08.pdf<7W$M_td@_\nOt+114$M_td@_\nOt57904N~pt)7;@wBuhmann, H. //Joss, W. //Vonklitzing, K. //Kukushkin, I. V. //Martinez, G. //Plaut, A. S.//Ploog, K. //Timofeev, V. B. w=t]Max Planck Inst Fe7stkorperforsch,Hochfeld Magnetlab,Bp ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Acad Sci Ussr,Inst Solid State Phys/Chernogolovka ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart7=t]UMagnetooptical Evidence for Fractional Quantum Hall States Down to Filling Factor 1/9U=t]02.6.3Ю7=t] Physical Review Letters=t] Article$M_td@_\nOt 1990 AUG 20 $M_td@_\nOt657$M_td@_\nOt8$M_td@_\nOt 1056-1059 $M_td@_\nOt%A\\As01mesant\Procite Databases\WCS\Articles\Buhmann H 1990 08.pdfA7\$M_td@_\nOt+114$M_td@_\nOt57908rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 78rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 78rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 78rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 7"RN~..:;@VJoyce, B. A. //Dobson, P. J. //Neave, J. H. //Woodbridge, K. //Zhang, J. //Bolger, B. V({=$t,Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; U:niv London Imperial Coll Sci & Technol,Dept Phys/London ; Philips Nederlandse Bedrijven Bv,Philips Res({=$t,wRHEED Studies of Heterojunction and Quantum-Well Forma:tion During MBE Growth - From Multiple-Scattering to Band Offsetsw({=$t,06.1.2({=$t, Surface Science({=$t:, Article$M_L@_|241986 Mar$M_L@_|24168$M_L@_|241-3$M_L@_|:24423-438$M_L@_|24%@\\As01mesant\Procite Databases\WCS\Articles/Joyce BA 1995 06.pdf@+120$M_L@_|246020;irectly Modulated Semiconductor-LasersH =`vH.10.2.5 =`vH. Electronics Letters =`vH. Article;irectly Modulated Semiconductor-LasersH =`vH.10.2.5 =`vH. Electronics Letters =`vH. Article 1038-1040 ;'$M_'!'@_!'<'%:\\Aeron\Procite Databases\WCS\Articles/Koch TL 1984 12.pdf:'$M_'!'@_!'<'+172'$M_'!'@_!'<'6030<;w1?Kuech, T. F. //Wolford, D. J. //Potemski, R. //Bradley, J. A. //Kelleher, K. H. //Yan, D. //Farrell, J. P. //Lesser, P. M. S. //Pollak, F. H. K=0q>ters =`vH. ArticleQ N~ =etallic Chemical Vapor-Depositionpp=ht&_06.4.4p=ht&_ Physical Review Lettersp=ht&_ Article=$M_@_ I Feb 3, 1992 $M_@_ I68$M_@_ I5$M_@_ I627-630=$M_@_ I%@\\As01mesant\Procite Databases\WCS\Articles\Kamiya I 1992 02.pdf@$M_@_ I*vWe report the first observation of reconstructions on sem=iconductor surfaces in atmospheric pressure (AP) environments. Using reflectance-difference spectroscopy we show that the primary reconstructions that occur on (001) GaAs in ultrahigh vacuum (UHV) als=o occur under AP H-2, He, and N2. These results demonstrate that dimer formation is not restricted to surfaces in UHV and justify the use of UHV studies to determine (001) GaAs chemistry during AP org=anometallic chemical vapor deposition (OMCVD). Reconstructions observed during OMCVD growth are inconsistent with previous models and provide new insights concerning growth.v$M_=@_ I+153$M_@_ I,sMolecular-Beam Epitaxy/ Gaas(100) Surfaces/ Layer Epitaxy Growth/ Semiconductors/ Superlattices/ Anisotropies/ Alass$M_= @_ I3370> =s287565 =s US3809908 =sUS =s5/7/1974> =s287565 =s US3809908 =sUS =s5/7/1974N~g.<bDependence of the AlxGa1-xAs Band Edge on Alloy Composition Based on the Absolute Measurement of XbK=0q>ԫ02.1.3K=0q>ԫ Applie<d Physics LettersK=0q>ԫ ArticleB$M_KM@_MB 1987 Aug 17 B$M_KM@_MB51B$M_KM@_M<B7B$M_KM@_MB505-507B$M_KM@_MB%@\\As01mesant\Procite Databases\WCS\Articles\Kuech TF 1987 08.pdf,XhH9X<<eXF<K=0q>ԫ+115B$M_KM@_MB6040=i.=@* TKamiya, I. //Aspnes, D. E. //Tanaka, H. //Florez, L. T. //Harbison, J. P. //Bhat, R.Tp=ht&_Bellcore,331 Newman Springs Rd/Red Bank//Nj/07701 ; U=niv Illinois,Dept Phys/Urbana//Il/61801 ; Fujitsu Labs Ltd/Atsugi 24301//Japanp=ht&_pSurface Science at Atmospheric-Pressure: Reconstructions (001) GaAs in Organom=etallic Chemical Vapor-Depositionpp=ht&_06.4.4p=ht&_ Physical Review Lettersp=ht&_ Article=$M_@_ I Feb 3, 1992 $M_@_ I68$M_@_ I5$M_@_ I627-630> =s287565 =s US3809908 =sUS =s5/7/1974+[~><@Clanton, John S. =s!Electro Optical Transmission Line=s =s12.2.1> =s287565 =s US3809908 =sUS =s5/7/1974> =sFCA1006612A1 ES0427720A1 FR2235549A1 FR2235549B1 JP50043948A2 US3809908F =s'US2785385 US3143655 US3385970 US3629590'> =s"US4027152 US4042891 US5452387 US6004044 US6213651 US6220873 US3987257 US4001578 US4677290 US4720630 US4901141 US5448676 US6201704 US6203333 US4055058 US4061577 US40>71753 US4075512 USRE36820 US6179627 US3903497 US3950075 US4109998 US4161650 US4178068 US4211929 US4238648 US4291943 US4294682 US4307934 US4427879 US4545075 US4570079 US4591663 US4600938 US4600939 US46?le,Englandh=t>8RTwo-Dimensional Photonic-Bandgap Structures Operating at Near Infrared WavelengthsR=t>805.3.3?=t>8 Nature=t>8 Article$M_@_H8 Oct 24, 1996 $M_@_H8383$M?_@_H86602$M_@_H8699-702$M_@_H8%<\\Aeron\Procite Databases\WCS\Articles/Krauss TF 1996 10.pdf'$M?_@_H8$M_@_H8*PHOTONIC crystals are artificial structures having a periodic dielectric structure designed to influence the behaviour of photons in *PHOTONIC crystals are artificial structures having a periodic dielectric structure designed to influence the behaviour of photons in ^N~F.>00940 US4614873 US4639772 US4648280 US4779948 US4834490 US6220878 US6267606 =s%;\\As01mesant\Procite Databases\WCS\Patents\US03809908__.pdf; >=s'G02F 1/28; H01P 1/32 =s+44 =s230?;@+Krauss, T. F. //Delarue, R. M. //Brand, S. +=t>8hUniv Glasgow,Dept Elect & Elect Engn,Opt Res Grp,Glasgow ; Univ Durham,Dept Phys,Durham Dh1 3?le,Englandh=t>8RTwo-Dimensional Photonic-Bandgap Structures Operating at Near Infrared WavelengthsR=t>805.3.3?=t>8 Nature=t>8 Article$M_@_H8 Oct 24, 1996 $M_@_H8383$M?_@_H86602$M_@_H8699-702$M_@_H8%A\\As01mesant\Procite Databases\WCS\Articles/Krauss TF 1996 10.pdf,@;Ү1?6Liau, Z. L. //Brown, W. L. //Homer, R. //Poate, J. M. 6=7x<30DCaltech/Pasadena//Ca/91125 ; Bell Tel Labs Inc/Murray Hill//Nj/07974D@=7x<30CSurface-Layer Composition Changes in Sputtered Alloys and CompoundsC=7x<3008.3.1=7x<30 Applied Physi@cs Letters=7x<30 Article $M_@_a 1977 $M_@_a 30 $M_@_a 12=tZ'Mechanism  Article $M_@_a 1977 $M_@_a 30 $M_@_a 12ML| <l./? ructures with other optical and optoelectronic devices.$M_@_H8+128$M_@_H8,Gaps$M_@_H86060@;@6Liau, Z. L. //Brown, W. L. //Homer, R. //Poate, J. M. 6=7x<30DCaltech/Pasadena//Ca/91125 ; Bell Tel Labs Inc/Murray Hill//Nj/07974D@=7x<30CSurface-Layer Composition Changes in Sputtered Alloys and CompoundsC=7x<3008.3.1=7x<30 Applied Physi@cs Letters=7x<30 Article $M_@_a 1977 $M_@_a 30 $M_@_a 12@ $M_@_a 626-628 $M_@_a %<\\As01mesant\Procite Databases\WCS\Articles/Liau ZL 1977.pdf< $M_@_a +117@. $M_@_a 6080A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_"RL| /C>>&$M_l\@_T>>$M_l\@_T>> $M_l\@_T>>.$M_l\@_T>>*%Monte Carlo simulations of electronC transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (Al(x)Ga(1-x)As, In(x)Ga(1-x)As, Ga(x)In(1-x)P), and hole tranCsport in Si have been performed at two lattice temperatures (77 and 300 K). The model employs band structures obtained from local empirical pseudopotential calculations and particle-lattice scatteringC rates computed from the Fermi Golden Rule accounting for band-structure effects. Intervalley deformation potentials significantly lower than those previously reported in the Monte Carlo literature arC e needed to reproduce available experimental data. This is attributed to the more complicated band structures we have adopted, particularly around the L- and X-symmetry points in most materials. DespiD;k=?zMishra, U. K. //Brown, A. S. //Rosenbaum, S. E. //Hooper, C. E. //Pierce, M. W. //Delaney, M. J. //Vaughn, S. //White, K. z2='sU̬CHughes Res LabsD/Malibu//Ca/90265 ; Hughes,S&Cg/El Segundo//Ca/00000C2='sU̬SMicrowave Performance of A1inas-GaInAs Hemts With 0.2-Mu-M and 0.1-Mu-M Gate LengthS2D='sU̬09.1.42='sU̬ IEEE Electron Device Letters2='sU̬ Article$M_@_ܝT41988 DecD$M_@_ܝT49$M_@_ܝT412$M_@_ܝT4647-649$M_@_ܝT4%<\\Aeron\Procite Dat^N~/C8r>@XFischetti, M.V.ؚ=JwD<Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zincblende StructuresC. 1. Homogeneous Transportؚ=JwD<E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEؚ=JwD< %IEEE Transactions oCn Electron Devices%ؚ=JwD<1991$M_l\@_T>>38$M_l\@_T>>3$M_l\@_T>>634C-649$M_l\@_T>>%D\\As01mesant\Procite Databases\WCS\Articles\Fischetti MV 1991 03.pdfD$M_l\@_T>>' 0018-9383 $M_l\@_TC>>)xEnglish IBM CORP, Thomas J Watson Res Ctr, Div Res, POB 218, Yorktown Hts, NY, 10598 EY647 Copyright 2003 SciSearch Plus$M_l\@_T>> $M_l\@_TD;k=?zMishra, U. K. //Brown, A. S. //Rosenbaum, S. E. //Hooper, C. E. //Pierce, M. W. //Delaney, M. J. //Vaughn, S. //White, K. z2='sU̬CHughes Res LabsD/Malibu//Ca/90265 ; Hughes,S&Cg/El Segundo//Ca/00000C2='sU̬SMicrowave Performance of A1inas-GaInAs Hemts With 0.2-Mu-M and 0.1-Mu-M Gate LengthS2D='sU̬09.1.42='sU̬ IEEE Electron Device Letters2='sU̬ Article$M_@_ܝT41988 DecD$M_@_ܝT49$M_@_ܝT412$M_@_ܝT4647-649$M_@_ܝT4%<\\Aeron\Procite Dat$M_@_ܝT4%<\\Aeron\Procite Dat^N~ //D$M_@_ܝT49$M_@_ܝT412$M_@_ܝT4647-649$M_@_ܝT4%A\\As01mesant\ProcitDe Databases\WCS\Articles\Mishra UK 1988 12.pdfA='sU̬+117$M_@_ܝT46120Eq;@ Greene, R. L. //Bajaj, K. K. 8=oN?gUniv New Orleans,Dept Phys/New Orleans//La/70148 ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright PattersongE8=oN?nEffect of Magnetic-Field on the Energy-Levels of a Impurity Center in GaAs Ga1-xAlxAs Quantum-Well Structuresn8=oN?03.1.1E8=oN?8=oN? "Physical Review B-Condensed Matter"8=oN? Article$M_ @_~ E 1985 Jan 15 $M_ @_~ 31$M_ @_~ 2$M_ @_~ 913-918$M_ @_~ %A\\EAs01mesant\Procite Databases\WCS\Articles\Greene RL 1985 01.pdfA$M_ @_~ +215$M_ @_~ 3260F!=0\qbpX!=0\qbpX%=\\Aeron\Procite Databases\WCS\Articles/Johnson EO 1965 06.pdf2!=0\qbpX!=0\qbF!=0\qbpX!=0\qbpX%=\\Aeron\Procite Databases\WCS\Articles/Johnson EO 1965 06.pdf2!=0\qbpX!=0\qbF!=0\qbpX!=0\qbpX%=\\Aeron\Procite Databases\WCS\Articles/Johnson EO 1965 06.pdf2!=0\qbpX!=0\qb+[DtK/G=pH4 Article$M_ @_2 1983$M_ @_2 45$M_ @_2 9$M_ @_G2 825-829$M_ @_2 %>\\As01mesant\Procite Databases\WCS\Articles/Greene RL 1982.pdf>=pH4+256$M_ @_G2 3280Hq;@ -Greene, R. L. //Bajaj, K. K. //Phelps, D. E. -|=@pu6lUniv New Orleans,Dept Phys/New Orleans//La/70148 ; Usaf,Wright Aeronaut Labs,Aadr,Avion Lab/HWright Pattersonl|=@pu6LEnergy-Levels of Wannier Excitons in GaAs-Ga1-xAlxAs Quantum-Well StructuresL|=@pu603.1.3|H=@pu6 "Physical Review B-Condensed Matter"|=@pu6 Article$M_,@_z, 1984 Feb 15 $M_,@_zH,29$M_,@_z,4$M_,@_z, 1807-1812 $M_,@_z,%A\\As01mesant\Procite Databases\WCS\Articles\Greene HRL 1984 02.pdf,$M_,@_z,$M_,@_z,+348$M_,@_z,3290ra,Dept Elect & Comp Engn/Santa5@I='sH̬>Effects of Carrier Transport on High-Speed Quantum-Well Lasers>@='sH̬10.2.5@='sH̬ Applied Physics LettersI@='sH̬ Article$M_@_[ 1991 Oct 7 $M_@_[59$M_@_[15w7gYI;@.?Nagarajan, R. //Fukushima, T. //Corzine, S. W. //Bowers, J. E. ?@='sH̬5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5@I='sH̬>Effects of Carrier Transport on High-Speed Quantum-Well Lasers>@='sH̬10.2.5@='sH̬ Applied Physics LettersI@='sH̬ Article$M_@_[ 1991 Oct 7 $M_@_[59$M_@_[15I$M_@_[ 1835-1837 $M_@_[%C\\As01mesant\Procite Databases\WCS\Articles\Nagarajan R 1991 10.pdfC@='sH̬*WIe present a model for the dynamic response of quantum well lasers which shows that the carrier transport across the separate confinement heterostructure region and the barriers can be critical in deteIrmining the modulation bandwidth. We also show that, depending on the particular quantum well laser structure, a large part of the experimentally measured reduction in modulation bandwidth is due to tIransport factors.$M_@_[+101$M_@_[,Holes$M_@_[6190J@Dielectric Optical Waveguides and Technique for Fabricating Same@ت=oF05.2.5ت=oF706518ت=oFJ@Dielectric Optical Waveguides and Technique for Fabricating Same@ت=oF05.2.5ت=oF706518ت=oFoF"SUS4005312 US401111oF05.2.5ت=oF706518ت=oF7gN~J<@BLogan, R.A.//Schwartz, Bertram//Wiegmann, William.//Joseph Charles8=oF8=oF98=oFJ@Dielectric Optical Waveguides and Technique for Fabricating Same@ت=oF05.2.5ت=oF706518ت=oFJ US3833435 ت=oFUSت=oF9/3/1974ت=oFBE0805142A CA1003511A1 DE2347802A1 DE23478J02C2 FR2200533A1 FR2200533B1 GB1448372A IT1004023A JP49071950A2 NL7312980A SE0387751C US3833435 US3865646 US3883219ت=oF US3523223 ت=oFJIBM Technical Disclosure Bulletin, Vol. 15, No. 1, June 1972, Method for Making Hemispheres by Potemski et al., pp. 147 \A 148.ت=oF"SUS4005312 US401111J3 US4099305 US4121177 US4255755 US4294651 US4725112 US4764246 US5389026 US5567659 US3984173 US3994758 US4961618 US5270532 US4049488 US4066482 US4213805 US4230997 US4566171 US4582390 US4460910 US455048K;=?8LNagarajan, R. //Ishikawa, M. //Fukushima, T. //Geels, R. S. //Bowers, J. E. L=ȁtPȒ5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5K=ȁtPȒHighly P-PTyped Mg-Doped GaN Films Grown With GaN Buffer Layers>أ=-vf)01.5.4 Hydrogen Complexes and Passivation)أ=-vf 2Japanese Journal of ^N~ /$/L;@BANguyen, L. D. //Brown, A. S. //Thompson, M. A. //Jelloian, L. M. A=pm̬ Hughes Res Labs/Malibu//Ca/90265 =pm̬LV50-Nm Self-Aligned-Gate Pseudomorphic Alinas GaInAs High Electron-Mobility TransistorsV=pm̬09.1.5=pm̬ %IEEE Transactions oLn Electron Devices%=pm̬ Article$M_@_l1992 Sep$M_@_l39$M_@_lL9$M_@_l 2007-2014 $M_@_l%A\\As01mesant\Procite Databases\WCS\Articles\Nguyen LD 1992 09.pdfA=pmL̬*We report on the design and fabrication of a new class of 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors (HEMT's) with potential for ultra-high-freLquency and ultra-low-noise applications. These devices exhibit an extrinsic transconductance of 1740 mS/mm and an extrinsic current-gain cutoff frequency of 340 GHz at room temperature; the latter is Lthe highest value yet reported for any three-thermal semiconductor device. We also report for the first time a detailed comparison of the small-signal characteristics of a pseudomorphic and a lattice-Lmatched AlInAs/GaInAs HEMT with similar gate length (50 nm) and gate-to-channel separation (17.5 nm): the former demonstrates a 16% higher transconductance and a 15% higher current-gain cutoff frequenLcy, but exhibits a 38% poorer output conductance. Finally, we offer an analysis on the high-field transport properties of ultra-short gate-length AlInAs/GaInAs HEMT's. This analysis shows that a reduc=rDzd04.4.3&=rDzd Physic^N~c$/M995 HHBE 51HHBE19HHBE 13326-13336 HHBE%A\\As01mesMant\Procite Databases\WCS\Articles/Glaser ER 1995 05.pdfAHHBE+162HHBE,NSingle-Crystal GaN/ Mg-Doped GaN/ Luminescence/ Layers/MI Recombination/ CentersNHHBE3120Nq;@ 1Jalabert, R. A. //Baranger, H. U. //Stone, A. D. 1p$=rDzdIYale Univ,Pob 2157/New Haven//Ct/06520 ; at&T Bell Labs/Holmdel//Nj/07733Ip$N=rDzdJConductance Fluctuations in the Ballistic Regime: a Probe of Quantum ChaosJp$=rDzd04.4.3&=rDzd PhysicNal Review Lettersp$=rDzd Article$M_l@_ 1990 Nov 5 $M_l@_65$M_l@_N19$M_l@_ 2442-2445 $M_l@_%C\\As01mesant\Procite Databases\WCS\Articles\Jalabert RA 1990 11.pdfC$M_l@ND_+251$M_l@_3350O=qvj<LReflectance-Difference Spectroscopy of (001) GaAs-Surfaces Ultrahigh-VacuumL=qvj<06.1.2=qvjHighly P-PTyped Mg-Doped GaN Films Grown With GaN Buffer Layers>أ=-vf)01.5.4 Hydrogen Complexes and Passivation)أ=-vf 2Japanese Journal of أ=-vf 2Japanese Journal of ^N~,/O can only be obtained by following specific heating or cooling procedures under very low AS4 flux. More generally, it is possible to employ this optical technique to determine surface atomic and electrO onic structure. Because RD spectra can be obtained with the surface in any transparent ambient, the database that we have established here provides a new approach for elucidating surface reconstructioO ns of (001) GaAs and hence the dynamics of surface reactions in non-UHV environments."7$M_@tB@_lBl7+2097$M_@tB@_lBl7,Molecular-Beam Epitaxy/ ScO anning-Tunneling-Microscopy/ Electron-Diffraction/ Angle-Resolved Photoemission/ Laser- Scattering/ Iii-V Semiconductors/ Gaas(100) Surfaces/ Infrared-Spectroscopy/ Optical Anisotropies/ Kinetic LimitO3s7$M_@tB@_lBl73360Pp<@: %Nakamura, S. //Senoh, M. //Mukai, T. %أ=-vf0Nichia Chem Ind Ltd,491 Oka/Tokushima 774//Japan0أ=-vf>Highly P-PTyped Mg-Doped GaN Films Grown With GaN Buffer Layers>أ=-vf)01.5.4 Hydrogen Complexes and Passivation)أ=-vf 2Japanese Journal of Q <u=?^2Abstreiter, G.//Bauser, E.//Fischer, A.//Ploog, K.2=(wȒAMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep GerAQ=(wȒqRaman-Spectroscopy: Versatile Tool for Characterization of Thin-Films and Heterostructures of GaAs and AlxGa1-xAsq=(wȒ07.2.2Q=(wȒ Applied Physics=(wȒ Article$M_@_܈~1978$M_@_܈~16$M_)YN~,/4/Pre, respectively. This value of the hole concentration is the highest ever reported for the p-type GaN films and that of the resistivity is the lowest.4$M_m$o@_ov+179P$M_m$o@_ov,cHall-Effect Measurement/ Mg-Doped GaN/ Hole Concentration/ Hole Mobility/ Resistivity/ Buffer Layerc$M_m$o@_ov3130Q <@^2Abstreiter, G.//Bauser, E.//Fischer, A.//Ploog, K.2=(wȒAMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep GerAQ=(wȒqRaman-Spectroscopy: Versatile Tool for Characterization of Thin-Films and Heterostructures of GaAs and AlxGa1-xAsq=(wȒ07.2.2Q=(wȒ Applied Physics=(wȒ Article$M_@_܈~1978$M_@_܈~16$M_Q@_܈~4$M_@_܈~345-352$M_@_܈~24$M_@_܈~%A\\As01mesant\Procite Databases\WCS\QYArticles/Abstreiter G 1978.pdfA+134$M_@_܈~60510RSObservation of Zero-Dimensional States in a One-Dimensional Electron InterferometerS A=vjZ03.5.4 A=vjZ Physical Review LeRSObservation of Zero-Dimensional States in a One-Dimensional Electron InterferometerS A=vjZ03.5.4 A=vjZ Physical Review LeRSObservation of Zero-Dimensional States in a One-Dimensional Electron InterferometerS A=vjZ03.5.4 A=vjZ Physical Review LeDCs4/\\As01mesant\Procite Databases\WCS\Articles\Wang G 1994 05.pdf>$M_ S@_ *We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDs). The temperature dependence of the photoluminescence (PL) indicates that the onset eneSrgy of the thermal quenching in approximately 20-nm-diam QDs is enhanced by a factor of approximately 2 as compared to a quantum well (QW), due to the additional confinement. At low temperature, an inScreased carrier lifetime is observed for the QDs as compared to a reference QW (880 vs 330 ps). The carrier lifetime in the QDs was found to be independent of the temperature for T<30 K. In addition tTq;Ү1?R WLaidig, W. D. //Holonyak, N. //Camras, M. D. //Hess, K. //Coleman, J. J. //Bardeen, J. Wc=p/Univ Illinois,Dept Elect Engn,Elect Engn Res ; UnTiv Illinois,Hort Res Lab/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Rockwell Int,Electr Res Ctr/Anaheim//Ca/92803 ; Univ Illinois,Dept Phys/Urbana//Il/61801cT$@_$@_ :${3410^N~ \\As01mesant\Procite Databases\WCS\Articles/Laidig WD 1980.pdf>{@_$@_ :${+403T){@_$@_ :${3410Up<@D Davis, R. F. //Sitar, Z. //Williams, B. E. //Kong, H. S. //Kim, H. J. //Palmour, J. W. //Edmond, J. A. //Ryu, J. //Glass, J. T. //Carter, C. H. h=sZ8UDN Carolina State Univ,Dept Mat Sci & Engn,Box 7907/Raleigh//Nc/27695Dh=sZ8Critical-Evaluation of the Status of the Areas for Future-Research Regarding the WUide Band-Gap Semiconductors Diamond ; Gallium Nitride and Silicon-Carbideh=sZ812.0h=sZ8 QMaterials Science and Engineering B-SUolid State Materials for Advanced TechnologyQh=sZ8 Articleu$M_~̀@_ĀLu1988u$M_~̀@_ĀLu 1u$UM_~̀@_ĀLu1u$M_~̀@_ĀLu77-104u$M_~̀@_ĀLu%=\\As01mesant\Procite Databases\WCS\Articles/Davis RF 1988.pdf=u$M_UO~̀@_ĀLu+165u$M_~̀@_ĀLu3140V;h1?P Wolford, D. J. //Bradley, J. A.  &=v7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987&=v?Pressur5@_$@_ $53@_$@_ $12@_$@_ Ctr/Yorktown Hts//Ny/105987&=v?PressurFODTX=u7,Rate-Equation Analysis of Microcavity Lasers,=u711.2.3=u7=u7 XJournal of Applied Physics=u7 Article$M_td@_\3t 1989 Nov 15 $M_td@_\3t66$M_tdX@_\3t10$M_td@_\3t 4801-4805 $M_td@_\3t%B\\As01mesant\Procite Databases\WCS\Articles\Yokoyama H 1989 11.pdf,$M_tXtd@_\3t$M_td@_\3t+131$M_td@_\3t6520Y;@(Blacha, A. //Presting, H. //Cardona, M. (0=t07Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700070=t0YDDeformation Potentials of K = 0 States of Tetrahedral SemiconductorsD0=t001.2.2 Elasticity0=t0 &Physica Status Solidi B-BasiYc Research&0=t0 Review$M_@_4.1984$M_@_4.126$M_@_4.1Y$M_@_4.11-36$M_@_4.%=\\As01mesant\Procite Databases\WCS\Articles/Blacha A 1980.pdf,$M_@_4.$Z݊(==?Ikeda, Masahiro=p`Optical switch=p`11.4.1=p`Z=p`/Nippon Telegraph & Telephone Public Corporation/=p`403735=p` US4521069 =p :j~D/<W598 ; Univ Newcastle Upon Tyne/Newcastle Tyne Ne1 7ru/Tyne &p=woLXkPressure-Dependence of GaAs/AlxGa1-xAs Quantum-Well Bound-States: the Determination of Valence-BaWnd Offsetsk=woLX02.1.3=woLX (Journal of Vacuum Science & Technology B(=woLX ArticleW=$M_FH@_H W= 1986 Jul-AugP=woLXP=woLX4=$M_FH@_H W=4=$M_FHW@_H W= 1043-1050 =$M_FH@_H W=%B\\As01mesant\Procite Databases\WCS\Articles\Wolford DJ 1986 07.pdfB=$M_FH@_H W=+168=$M_FWH@_H W=6490X;@xYokoyama, H. //Brorson, S. D. =u7[Mit,Dept Elect Engn & Comp Sci/Cambridge//Ma/02139 ; Mit,Electr Res Lab/Cambridge//Ma/02139[X=u7,Rate-Equation Analysis of Microcavity Lasers,=u711.2.3=u7=u7 Y;h1?(Blacha, A. //Presting, H. //Cardona, M. (0=t07Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700070=t0YDDeformation Potentials of K = 0 States of Tetrahedral SemiconductorsD0=t001.2.2 Elasticity0=t0 &Physica Status Solidi B-BasiYc Research&0=t0 Review$M_@_4.1984$M_@_4.126$M_@_4.1YM@_4.+182$M_@_4.6560DtN~lT *Z"US4580873 US4630883 US4717228 US4720160 US4737003 US4773736 US4775640 US4784451 US4799797 US4813757 US4844572 US4904039 US4932736 US5033016 US5033811 US5093746 US5101293 US5131060 US514651Z8 US5148505 US5283844 US6091867 US6137930 US6236778 US6236787 US6243511 US6253007 US6330380=p`%;\\As01mesant\Procite Databases\WCS\Patents\US04521069__.pdf;Z=p`' G02B 5/174 =p`+28=p`63260[;@|Cage, M. E. //Dziuba, R. F. //Field, B. F. //Williams, E. R. //Girvin, S. M. //Gossard, A. C. //Tsui, D. C. //Wagner, R. J. |b=tSNbs,Ctr Absol[ute Phys Quant,Div Elect Measurements & ; Nbs,Ctr Chem Phys,Div Surface Sci/Washington//Dc/20234 ; Bell Tel Labs Inc/Murray Hill//Nj/07974 ; Princeton Univ,Dept Elect Engn & Comp Sci/Princeton//Nj/08[544 ; Usn,Res Lab/Washington//Dc/20375b=tSBDissipation and Dynamic Non-Linear Behavior in the Quantum RegimeBb=tS02.5.2[l=tSl=tS Physical Review Lettersb=tS Article$M_ @_W  1983 Oc\¥+<1?J Keyes, R.W. =w:Figure of Merit for Semiconductors for High-Speed Switches:0=w09.0\=w Proceedings of the IEEE=w1972t$M_} @_Nxt60t$M_} @_Nxt225t$M_$TDz<LYRM_@_4.+182$M_@_4.6560Z݊(=@Ikeda, Masahiro=p`Optical switch=p`11.4.1=p`Z=p`/Nippon Telegraph & Telephone Public Corporation/=p`403735=p` US4521069 =pZ`JP=p`6/4/1985=p`CA1178703A1 DE3210980A1 DE3210980C2 FR2503394A1 FR2503394B1 JP02028851B4 JP02030491B4 JP571Z63216A2 JP58050517A2 JP58052621A2 JP58080617A2 JP58137246A2 US4521069=p`1US3952265 US4065729 US4316156 US4327962 US43769461=p`Z"Directional Coupler Switches, Modulators, and Filters Using Alternating Techniques, in IEEE Transactions on Circuits and Systems, vol. CAS-26, No. 12, Dec. 1979."=p`[;[?|Cage, M. E. //Dziuba, R. F. //Field, B. F. //Williams, E. R. //Girvin, S. M. //Gossard, A. C. //Tsui, D. C. //Wagner, R. J. |b=tSNbs,Ctr Absol[ute Phys Quant,Div Elect Measurements & ; Nbs,Ctr Chem Phys,Div Surface Sci/Washington//Dc/20234 ; Bell Tel Labs Inc/Murray Hill//Nj/07974 ; Princeton Univ,Dept Elect Engn & Comp Sci/Princeton//Nj/08[544 ; Usn,Res Lab/Washington//Dc/20375b=tSBDissipation and Dynamic Non-Linear Behavior in the Quantum RegimeBb=tS02.5.2[l=tSl=tS Physical Review Lettersb=tS Article$M_ @_W  1983 OcHx8hmL/T/_;@ Capasso, F.  C=rB#At&T Bell Lab/Murray Hill//Nj/07974#C=rB Physics of Avalanche Photodiodes C_=rB11.3.2C=rB Semiconductors and SemimetalsC=rB Review$M_@_B19_85$M_@_B22(Pt.d)$M_@_B1-172$M_@_B%?\\As01mesant\Procite Databases\WCS\Articles//Capasso F 1_985.pdf,=rB=rB+126$M_@_B6620`q;@ @Nahory, R. E. //Pollack, M. A. //Johnston, W. D. //Barns, R. L. @X=Ht8MBell Tel Labs Inc/Holmdel//Nj/07733 ; Bell Tel Labs Inc/Murray Hill//Nj/0`7974MX=Ht8gBand-Gap Versus Composition and Demonstration of Vegards Law for In1-xGaxAsyP1-y Lattice Matched to InP Eh?=Ht8`h?=Ht8h?=Ht8h?=Ht8h?=Ht8h?=Ht8h?a!Fr>w1? Krijn, MPCM KHeterojunction Band Offsets and Effective Masses in III V Quaternary AlloysK02.1 $Semiconductor Science and Technology$19916127-31%=\\Aaeron\Procite Databases\WCS\Articles\Krijn MPCM 1991 01.pdf=' 0268-1242 )iEnglish Phillips Res Labs, POB 80000, 5600 JA EINDHOVEN, Netherlands, EU469 Copyright 2003 SciSearch Plusi*HEstimates os/Nahory RE 1978.pdf9@_@_ `9+239@_@_ 3530#S~ *l]T20@_TD@_<b?T818-820@_TD@_<b?T%D\\As01mesant\Procite Databases\WCS\Articles/Campbell JC 1983 009.pdfD@_TD@_<]Bb?T+106@_TD@_<b?T6610^8r>@bZhu, X.J.//Louie, S.G. HCHCHCHC^HCHCHCHCHCHC^HCAQuasi-Particle Band-Structure of 13 Semiconductors and InsulatorsAHC01.3.2 Electron Band Struct^uresHC "Physical Review B-Condensed Matter"HC1991HC43HC^17HC 14142-14156 HC%=\\As01mesant\Procite Databases\WCS\Articles\Zhu X 1991 06.pdf=HC_=rB11.3.2C=rB Semiconductors and SemimetalsC=rB Review$M_@_B19_85$M_@_B22(Pt.d)$M_@_B1-172$M_@_B%:\\Aeron\Procite Databases\WCS\Articles//Capasso F 1985.p_df'=rB=rB+126$M_@_B6620CTRIC MATRICESHC64610^h8h(dL/^' 0163-1829 HC)ENGLISH UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA, 94720UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT SCI, BERKELEY, CA, ^94720 FQ974 Copyright 2003 SciSearch PlusHC*By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle^ band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demons^trate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AIP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and^ the Al0.5Ga0.5As and In0.53Ga0.47As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(GAMMA-1c) of AlP^ , E(L1c) of AlAs, and E(L1c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are also examined in this work. The m^ any-body corrections to the eigenvalues of the valence-band-maximum states obtained from the local-density approximation are calculated for the zinc-blende-structure semiconductors, which are widely u^ sed in semiconductor-interface studies. In the present approach, the static screening of the Coulomb interaction between two electrons in a crystal is determined using a model that depends only on the_;1? Capasso, F.  C=rB#At&T Bell Lab/Murray Hill//Nj/07974#C=rB Physics of Avalanche Photodiodes C^N~|bX1=n0 11.4.2X1=n0 At&T Bell LaboratoriesX1=n0 706518X1=n0  USb4546244 X1=n0 USX1=n0  10/8/1985 X1=n0 CA1213965A1 CA1281220A1 DE3683370C0 EP0155802A2 EP015b5802A3 EP0239635A1 EP0239635B1 HK0100493A JP63501528T2 KR9401908B1 KR9401908Y1 US4546244 US4716449 USRE32893 WO8702478A1X1=n0 "T. H. Wood et al, ""High-Speed Optbical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure"", Appl. Phys. Lett. 44 (1), Jan. 1, 1984, pp. 16-18.; K. Bohnert et al, ""Intrinsic Absorptive Optical Bistability in CdS"", bApp. Phys. Lett. 43 (12), Dec. 15, 1983, pp. 1088-1090.; J. Hajto et al, ""Optical Bistability Observed in Amorphous Semiconductor Films"", Philosophical Magazine B, 1983, vol. 47, No. 4, pp. 347-366.b"X1=n0 "7US4737003 US4749850 US4751378 US4754132 US4761620 US4772854 US4800262 US4822992 US4828368 US4830444 US4848880 US4851840 US4877952 US4878723 US4884119 US49b04858 US4904859 US4914286 US4917456 US4947223 US4952791 US4957337 US4959534 US4967068 US4978842 US4999485 US4999486 US5010517 US5023944 US5045681 US5073981 US5091980 US5095200 US5101414 US5126553 US52b02897 US5210428 US5222071 US5238867 US5288990 US5311008 US5323019 US5376784 US5451767 US5475704 US5488231 US5488504 US5539668 US5543631 US5608566 US5623140 US5623359 US5646395 US5731596 US5748653 US59c8r>h1?v-Fiorentini, V.//Methfessel, M.//Scheffler, M. HCHCHCHC^N~T/tates of valence-band and conduction-band offsets for latticematched and pseudomorphic strained heterostructures of six technologically important III-V quaternary alloys are presented. Valence-band offsaets are obtained via interpolation of the theory-based results of Van de Walle's 'model-solid' approach for the binary constituents. Estimates for band gap differences are obtained via interpolation oaf the experimental band gap energies of the ternary constituents. Adding the valence-band offset and band gap difference gives an estimate of the conduction-band offset. Band-edge effective masses at aGAMMA are determined from a linear interpolation of the effective masses of the binary constituents, obtained from self-consistent ab initio band structure calculations. Results are shown to agree wela7l with the outcome of experiments.H+18364670bފ(=@0Miller, D. A. B. X1=n0 X1=n0 X1=n0 %Nonlinear and bistable optical device%bX1=n0 11.4.2X1=n0 At&T Bell LaboratoriesX1=n0 706518X1=n0  USb4546244 X1=n0 USX1=n0  10/8/1985 X1=n0 CA1213965A1 CA1281220A1 DE3683370C0 EP0155802A2 EP015b5802A3 EP0239635A1 EP0239635B1 HK0100493A JP63501528T2 KR9401908B1 KR9401908Y1 US4546244 US4716449 USRE32893 WO8702478A1X1=n0 "T. H. Wood et al, ""High-Speed Optc8r>h1?v-Fiorentini, V.//Methfessel, M.//Scheffler, M. HCHCHCHCHCHC-]N~2\/cHCHCElectronic and Structural Properties of GaN by the Full-Potential Linear Muffin-Tin Orbitals Method - the role ocf the d-electronsqHCHCHC01.3.2 Electron Band StructuresHCc "Physical Review B-Condensed Matter"HC1993HC47HC20HCc 13353-13362 HC%D\\As01mesant\Procite Databases\WCS\Articles\Fiorentini V 1993 05.pdfDHC' 0163-1829c HC)ENGLISH MAX PLANCK GESELL, FRITZ HABER INST, FARADAYWEG 4-6, W-1000 BERLIN 33, GERMANY, UNIV CAGLIARI, DIPARTIMENTO SCI FIS, I-09100 CAGLIARI, ITALY, LF069 Copcyright 2003 SciSearch PlusHC*The structural and electronic properties of cubic GaN are studied within the local-density approximation by the full-potential licnear muffin-tin orbitals method. The Ga 3d electrons are treated as band states, and no shape approximation is made to the potential and charge density. The influence of d electrons on the band structc ure, charge density, and bonding properties is analyzed. Due to the energy resonance of Ga 3d states with nitrogen 2s states, the cation d bands are not inert, and features unusual for a III-V compound;5m=?Capasso, F. //Kiehl, R. A. $At&T Bell Labs/Murray Hill//Nj/07974$sResonant Tunneling Transistor With Quantum Well Base and High-Energy Injection: a New Negative Differential$M_|l@_d>P|6650^N~tb04858 US4904859 US4914286 US4917456 US4947223 US4952791 US4957337 US4959534 US4967068 US4978842 US4999485 US4999486 US5010517 US5023944 US5045681 US5073981 US5091980 US5095200 US5101414 US5126553 US52b02897 US5210428 US5222071 US5238867 US5288990 US5311008 US5323019 US5376784 US5451767 US5475704 US5488231 US5488504 US5539668 US5543631 US5608566 US5623140 US5623359 US5646395 US5731596 US5748653 US59b 65899 USH19117X1=n0 %;\\As01mesant\Procite Databases\WCS\Patents\US04546244__.pdf;X1=n0 ' H01J 40/14 X1=n0 b @+57X1=n0 63280c8r>@v-Fiorentini, V.//Methfessel, M.//Scheffler, M. HCHCHCHCc HCHCHCHCHCd Devices09.2.4 Journal of Applied Physics Article 1985 Aug 1 583 1366-1368 %<\\Aeron\Procite Databases\WCS\Articles\Capasso F 1985 08.pdf<+1826630e;1?(Capasso, F. //Mohammed, K. //Cho, A. Y. (0=7u:S$At&T Bell Labs/Murray Hill//Nj/07974$0=7u:SGSequential Resonanet Tunneling Through a Multiquantum Well SuperlatticeG0=7u:S04.1.1.2P/=7u:SP/=7u:S Applied Physicse Letters0=7u:S Article$M_|l@_d>P| 1986 FEB 17 $M_|l@_d>P|48$M_|l@_d>P|$M_|l@_d>P|+f~ d/f;@LCapasso, F. //Sen, S. //Gossard, A. C. //Hutchinson, A. L. //English, J. H. L`{=sz$At&T Bell Labs/Murray Hill//Nj/07974$`{=fszPQuantum-Well Resonant Tunneling Bipolar-Transistor Operating at Room-TemperatureP`{=sz09.2.4`{=sz IEEE Electfron Device Letters`{=sz Articlec$M_ln@_nc1986 Octc$M_ln@_nc7c$M_ln@_nfc10c$M_ln@_nc573-576c$M_ln@_nc%>\\As01mesant\Procite Databases\WCS\Articles/Capasso F 1986.pdf>=szf;+107c$M_ln@_nc6660g;@-Capasso, F. //Tsang, W. T. //Williams, G. F. -'=rE'Bell Tel Labs Inc/Murray Hill//Nj/07974''=rEfStaircase gSolid-State Photomultipliers and Avalanche Photo-Diodes With Enhanced Ionization Rates Ratiof'=rE11.3.2'=rE %IEEE Transactiongs on Electron Devices%'=rE Article<$M_EG@_F:><1983<$M_EG@_F:><30<$M_EG@_F:>g<4<$M_EG@_F:><381-390<$M_EG@_F:><%A\\As01mesant\Procite Databases\WCS\Articles/Capasso F 1983 04.pdfA<$M_EG@_F:g=><+154<$M_EG@_F:><6680h;h1?@-Cardona, M. //Christensen, N. E. //Fasol, G. -#=Po6R7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007#=Po6R1aN~ h;@@-Cardona, M. //Christensen, N. E. //Fasol, G. -#=Po6R7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007#=Po6RhVRelativistic Band-Structure and Spin-Orbit-Splitting of Zincblende-Type SemiconductorsV#=Po6R01.3.2 Electron Band Structures=Po6Rh "Physical Review B-Condensed Matter"#=Po6R Article$M_ܡ@_ԡh_ 1988 July 15 $M_ܡ@_ԡh_38h$M_ܡ@_ԡh_3$M_ܡ@_ԡh_ 1806-1827 $M_ܡ@_ԡh_%A\\As01mesant\Procite Databases\WCS\Articles\Cardona M 1988 07.pdfh]A$M_ܡ@_ԡh_+168$M_ܡ@_ԡh_6720i,<@T"Roth, L.M.//Lax, B.//Zwerdling, S."=سtt<>Theory of Optical Magneto-Absorption Effects in Semiconductors>=سtt<i05.1.2=سtt< Physical Review=سtt<1959$M_4$@_ p4114$M_4$@_ p4i90-1049=سtt<9=سtt<%?\\As01mesant\Procite Databases\WCS\Articles\Roth LM 1956 04.pdf?$M_4$@_ p461780ij8r>h1?&Rohlfing, M.//Kruger, P.//Pollmann, J. HCHCHCHCture Calculations for C, Si, Ge, GaAs, and SiC using Gaussian-Orbital Basis-SetsH.#SN~l/j)wENGLISH UNIV MUNSTER, INST THEORET PHYS FESTKORPERPHYS 2, D-48149 MUNSTER, GERMANY, MQ165 Copyright 2003 SciSearch PluswHCP *We report state-of-the-art fjirst-principles calculations of the quasiparticle energies of prototype homo-polar and heteropolar covalent semiconductors described in terms of the electron self-energy operator. The wave functions ajre calculated within density-functional theory using the local-density approximation and employing nonlocal, norm-conserving pseudopotentials. The self-energy operator is evaluated in the GW approximaj tion. Employing the plasmon-pole approximation for the frequency dependence of the dielectric matrix epsilon(G),(G)'(q omega), its static part is fully calculated within the random-phase approximationj (RPA) as well as by using a number of different models. All calculations are carried out employing localized Gaussian orbital basis sets. This will turn out to be very useful for detailed studies of j the quasiparticle properties of more complex systems such as bulk defects including lattice relaxation and reconstructed surfaces with large unit cells or interfaces, which are otherwise computationalj ly too demanding. Using an s,p,d,s double dagger basis set of 40 Gaussian orbitals for Si, for example, yields already convergent results in excellent agreement with tl;e results of a 350-plane-wave cj alculation in the corresponding plane-wave representation. Most of our results for Si, diamond, Ge, and GaAs are in very good agreement with experimental data and with available plane-wave GW calculatk8r>h1?-Albrecht, S//Reining, L//DelSole, R//Onida, G-x=s SAb initio calculation of excitonic effects in the optical spectra of semiconductorsS^N~t/k =s  =s  =s  =s  =s  k=s  =s  =s  =s  =s  =ks  =s  =s  =s  =s  =s k =s  =s  =s  =s  =s k =s  =s  =s  =s  =s 64650l=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fhl=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fhl=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fhsF0F=r08.4.30F=rm0F=r Applied Physics Letters0F=r Article$M_do@_|oTt 1990 Apr 23 $M_dN~j8r>@&Rohlfing, M.//Kruger, P.//Pollmann, J. HCHCHCHCjHCHCHCHCHCjHCHCiQuasi-Particle Band-Structure Calculations for C, Si, Ge, GaAs, and SiC using Gaussian-Orbital Basis-SetsHjCHCcHC01.3.2 Electron Band StructuresHC "Physical Review B-Conjdensed Matter"HC1993HCP 48HCP 24HCP  17791-1j7805 HCP %B\\As01mesant\Procite Databases\WCS\Articles\Rohlfing M 1993 12.pdfBHCP ' 0163-1829 HCP j)wENGLISH UNIV MUNSTER, INST THEORET PHYS FESTKORPERPHYS 2, D-48149 MUNSTER, GERMANY, MQ165 Copyright 2003 SciSearch PluswHCP *We report state-of-the-art fjirst-principles calculations of the quasiparticle energies of prototype homo-polar and heteropolar covalent semiconductors described in terms of the electron self-energy operator. The wave functions ak8r>h1?-Albrecht, S//Reining, L//DelSole, R//Onida, G-x=s SAb initio calculation of excitonic effects in the optical spectra of semiconductorsS^N~2ks  =s  =s  =s  =s  =s k =s  =s  =s  =s  =s k =s  =s  =s  =s ! =s  k =s  =s  =s . =s *An ab initio approach to the calculation of excitonic effk ects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. Ak n application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.k $M_l@_N+113$M_l@_N,tBand Gaps/ Clusters/ Crystal/ Diamond/ Electronic Structure/ GaAs/ Insulators/ Local-Field/ Quasi-Particle/ Siliconlution During Growth of GaAs and AlGaAs by Molecular-Beam EpitaxyM0=v:ԫ06.3.20=v:ԫ Journal of Applied Physics0l=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fh$M_do@_|oTt 1990 Apr 23 $M_d^N~2l/k8r>@-Albrecht, S//Reining, L//DelSole, R//Onida, G-x=s SAb initio calculation of excitonic effects in the optical spectra of semiconductorsSkx=s 01.4.4 Excitonsx=s  Physical Review Lettersx=s American Physical Soc$M_lk@_N$M_l@_N1998$M_l@_N80$M_l@_N20$M_l@_N 451k0-4513 $M_l@_N%B\\As01mesant\Procite Databases\WCS\Articles\Albrecht S 1998 05.pdfB$M_l@_N' 0031-9007 $M_l@_kN)English Ecole Polytech, CNRS, CEREM, CEA, URA 1380, Lab Solides Irradies, F-91128 Palaiseau, France Univ Roma Tor Ventr4, Dipartimento, FIS, IST NAZL FIS MAT, I-00133 Rome, Italy A1998ZN3080k0038 Copyright 2003 SciSearch Plus =s  =s  =s  =s k =s  =s  =s  =s  =s  =lution During Growth of GaAs and AlGaAs by Molecular-Beam EpitaxyM0=v:ԫ06.3.20=v:ԫ Journal of Applied Physics0l=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fh$M_do@_|oTt 1990 Apr 23 $M_d^N~t/mo@_|oTt56$M_do@_|oTt17$M_do@_|oTt 1697-1699 $M_do@_|oTt%B\\As01mesant\Procite Databases\WCS\Amrticles\Pfeiffer L 1990 04.pdf,$M_do@_|oTt$M_do@_|oTt+183$M_do@_|oTt3680n;@h Casey, H. C.  R=HtJ'Bell Tel Labs Inc/Murray Hill//Nj/07974' R=HtJ~Room-Temperature Threshold-Current Dependennce of GaAs-AlxGa1-xAs Double-Heterostructure Lasers on X and Active-Layer Thickness~ R=HtJ10.1.2 R=HtJ Journal of Applied Physincs R=HtJ Article$M_@_l,1978$M_@_l,49$M_@_l,7n$M_@_l, 3684-3692 $M_@_l,%@\\As01mesant\Procite Databases\WCS\Articles/Casey HC 1978 07.pdf@ h=HtJ+110n+$M_@_l,6760o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@m*Z|/o;@ Chadi, D. J.  =`qZ̬0Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/943040=`qZ̬V(110) Surface-States of GaAs: Senositivity of Electronic-Structure to Surface-StructureV=`qZ̬06.2.2=`qZ̬ "Physical Review B-Condensed Matter"o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@o_TD 1800-1812 $M_D\@_TD%@\\As01mesant\Procite Databases\WCS\Articles\Chadi DJ 1978 08.pdf@=`qZ̬+155$M_D\o@_TD6830p;@(Chai, Y. G. //Wood, C. E. C. //Chow, R. (Varian Associates,Corp Solid State Lab/Palo Alto//Ca/94303 ; Cornell Univ,Natl Res & Resource Fac Submicron ; Cornell Univ,Dept Elect pEngn/Ithaca//Ny/14853TThe Effect of Growth-Conditions on Si Incorporation in Molecular-Beam Epitaxial GaAsT06.3.2 Applied Physics Letters Article19813910800-803%pQ<\\As01mesant\Procite Databases\WCS\Articles/Chai YG 1981.pdf<+1076900q;[??Chandra, A. //Wood, C. E. C. //Woodard, D. W. //Eastman, L. F. ?)=tJ,Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853,)=t@_bQ+139$M_@_bQ6940r;1?05Chang, C. A. //Ludeke, R. //Chang, L. L. //Esaki, L. 5=ؽs07Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=ؽs87=ؽs006.1.4=ؽs0 Applied Physics LettersmO:jAqN~s akes into account the valence-band mixing and the strain effects with proper boundary conditions. Detailed numerical results and significant features for strained GaxIn1-xAs grown on an In1-xGaxAsyP1-s y lattice matched to InP are presented. For a Ga mole fraction x less than 0.468 (compression), the top subband is heavy-hole-like. For x greater than 0.468 (tension strain), the top band can be eithes r a heavy-hole or a light-hole subband, depending on the well width and the shear deformation potential. Interesting subband structures, which show a negative effective mass in the top subband, are disscussed.$M_@_+196$M_@_,Effective Masses/GaAs/ Hole Subands/ Lasers/Layer Super Lattices/ Material Parameters/ Semiconductors/Ssuperlattices/ Uniaxial Stress/Valence Bands$M_@_$M_@_64660t h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#ht $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!t $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!t $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!t $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!JzN~|/r=ؽs0 Article$M_td@_\1977$M_td@_\31$M_td@_\11$M_tdr@_\759-761$M_td@_\%=\\As01mesant\Procite Databases\WCS\Articles/Chang CA 1977.pdf=$M_td@_\+146$M_tdr@_\6960s8r>@ Chuang S.L.3=r 3=r?Efficient Band Structure Calculations of Strained Quantum Wells3=sr>3=r03.13=r "Physical Review B Condensed Matter3=r3=sr3=r1991$M_@_43$M_@_12$M_@_ 9649-96s61 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles\Chuang SL 1991 04.pdfA$M_@_' 0163-1829 $M_@_s)vEnglish Univ Illinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL, 61801 FK191 Copyright 2003 SciSearch Plus$M_@_$M_@_tr^07.38=r^ (Journal of Vacuum Science & Technology B8=r^'8=r^1991t$M_!#@_#h9$M_!#@_#h4$M_!#@_#h 2182-2188 $M_!#@_#h%B\\Aeron\Procite Databases\s/Valence Bands$M_@_$M_@_64660} =ms$M_@_ $M_@_$M_@_$M_@_$M_@_s$M_@_$M_@_$M_@_$M_@_$M_@_ $M_s@_$M_@_$M_@_$M_@_$M_@_$M_@_s/$M_@_*The effective-mass equations using the Luttinger-Kohn Hamiltonian taking into account the strain effects are solved exactly by making a unitary trans sformation. Using this method, we need to solve two 2 x 2 matrices instead of the original 4 x 4 matrix. The eigenvalues and eigenvectors for the heavy hole and the light hole can be expressed analytis cally. When applied to heterojunctions such as quantum wells, the reduction in the number of unknowns makes the method a more efficient approach to the calculations of valence-band structures, which ts akes into account the valence-band mixing and the strain effects with proper boundary conditions. Detailed numerical results and significant features for strained GaxIn1-xAs grown on an In1-xGaxAsyP1-tPr>$u=?Stringfellow, G.B. //Chen G.S.8=r^ 8=r^-Atomic ordering in III/V semiconductor alloys-8=tr^07.38=r^ (Journal of Vacuum Science & Technology B8=r^'8=r^1991^N~/tPr>@Stringfellow, G.B. //Chen G.S.8=r^ 8=r^-Atomic ordering in III/V semiconductor alloys-8=tr^07.38=r^ (Journal of Vacuum Science & Technology B8=r^'8=r^1991t$M_!#@_#h9$M_!#@_#h4$M_!#@_#h 2182-2188 $M_!#@_#h%G\\As01mesant\Procite Databtases\WCS\Articles\Stringfellow GB 1991 07.pdfG$M_!#@_#h' 1071-1023 $M_!#@_#h)OEnglish Univ Utah, Salt Lake City UT, 84112 GB897 Copyright t2003 SciSearch Plus$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h.$M_!#@_t#h*The phenomenon of spontaneous atomic scale ordering was first reported for semiconductor alloys only approximately 5 years ago. Since that time, ordering has been observed in nearly alui.=1?Sanders, G. D. //Bajaj, K. K. ?=o ccUniversal Energy Syst Inc,4401 Dayton Xenia ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright Pattersoncu?=o c{Electronic-Properties and Optical-Absorption Spectra of GaAs-AlxGa1-xAs Quantum-Wells in Externally Applied Electric-Fields{?=o cu03.3.2J=o cJ=o c "Physical Review B-Condensed Matter"?=o c Article+$M_46@u40=o c Article+$M_46@k^N~//ui.=@Sanders, G. D. //Bajaj, K. K. ?=o ccUniversal Energy Syst Inc,4401 Dayton Xenia ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright Pattersoncu?=o c{Electronic-Properties and Optical-Absorption Spectra of GaAs-AlxGa1-xAs Quantum-Wells in Externally Applied Electric-Fields{?=o cu03.3.2J=o cJ=o c "Physical Review B-Condensed Matter"?=o c Article+$M_46@u_|6]+ 1987 Feb 15 +$M_46@_|6]+35+$M_46@_|6]+5+$M_46@_|6]+ 2308-2320 +$M_46@_|6u]+%B\\As01mesant\Procite Databases\WCS\Articles\Sanders GD 1987 02.pdf,+$M_46@_|6]++$M_46@_|6]++103+$M_46@_|6]+u 3740ves Lab/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801Hm=+v/>Disorder of an AlAs-GaAs Super-Lattice by Silicon Implantation>Hm=+ves Lab/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801Hm=+v/>Disorder of an AlAs-GaAs Super-Lattice by Silicon Implantation>Hm=+eman JJ 1982.pdf:$M_tO@_ON9t+123$M_tO@_ON9t7020wi.=1?R@Aspnes, D. E. //Harbison, J. P. //Studna, A. A. //Florez, L. T. @/=@uDBellcore/Red Bank//Nj/07701/=@uDdAppwlication of Reflectance Difference Spectroscopy to Molecular-Beam Epitaxy Growth of GaAs and AlAsd/=@uD06.1.1/=@uD/0N~ a/ w=@uD 6Journal of Vacuum Science & Technology a-Vacuum Films6/=@uD Article$M_@_/ 1988 May-Jun $wM_@_/6$M_@_/3$M_@_/ 1327-1332 $M_@_/%A\\As01mesant\Procite Databases\wWCS\Articles\Aspnes DE 1988 05.pdfA$M_@_/+228$M_@_/2130x;@?Duke, C. B. //Paton, A. //Ford, W. K. //Kahn, A. //Carelli, J. ?Xu=xtdTnXerox Corp,Webster Res Ctr/Rochester//Ny/14644 ; Princeton Univ,Dept Electx Engn & Comp Sci/Princeton//Nj/08544nXu=xtdT_Dynamical Analysis of Low-Energy Electron-Diffraction Intensities From GaAs(110)-P(1x1)-Sb(1ML)\Xu=xxtdTXu=xtdTXu=xtdT06.3.1Xu=xtdTXu=xtdT "Physical Review B-Coxndensed Matter"Xu=xtdT Article$M_td@_\ct 1982 Jul 15 $M_td@_\ct26$M_td@_\cxt2$M_td@_\ct803-814$M_td@_\ct%?\\As01mesant\Procite Databases\WCS\Articles\Duke CB 1982 07.pdf?$M_td@_\cx;t+172$M_td@_\ct7050y;h1?(Fazzio, A. //Caldas, M. J. //Zunger, A. ( =0GvQ&Solar Energy Res Inst/Golden//Co/80401& =0GvQ^Many-Electron Muolar Semiconductors^ =0GvQ,01.4.3 "Deep" Localized-Wave-Function Levels,/=0GvQ[Hx8y;@(Fazzio, A. //Caldas, M. J. //Zunger, A. ( =0GvQ&Solar Energy Res Inst/Golden//Co/80401& =0GvQ^Many-Electron Muyltiplet Effects in the Spectra of 3d impurities in Heteropolar Semiconductors^ =0GvQ,01.4.3 "Deep" Localized-Wave-Function Levels,/=0GvQy "Physical Review B-Condensed Matter" =0GvQ Article$M_@_; 1984 Sep 15 $M_@_;30y$M_@_;6$M_@_; 3430-3455 $M_@_;116$M_@_;%@\\As01mesant\Procite Datyabases\WCS\Articles\Fazzio A 1984 09.pdf@$M_@_;+160$M_@_;7160z;1? HFejer, M. M. //Yoo, S. J. B. //Byer, R. L. //Harwit, A. //Harris, J. S. H!=obmStanford Univ,Edward L Ginzton Lab/Stanford//Ca/94305 ; Stanford bility at 9.6-10.8-Mu-M in Electric-Field-Biased AlGaAs Quantum zWellsv!=ob03.3.4!=ob!=ob Physical Review Letters!=ob zArticle$M_4l@_d 1989 FEB 27 $M_4l@_d62$M_4l@_d9$M_4l@_d 1041-1z044 $M_4l@_d%;\\Aeron\Procite Databases\WCS\Articles\Fejer MM 1989 02.pdf;$M_4l@_d+153$M_4l@_d7180zg^N~ z;@ HFejer, M. M. //Yoo, S. J. B. //Byer, R. L. //Harwit, A. //Harris, J. S. H!=obmStanford Univ,Edward L Ginzton Lab/Stanford//Ca/94305 ; Stanford zUniv,Stanford Electr Labs/Stanford//Ca/94305m!=obvObservation of Extremely Large Quadratic Susceptibility at 9.6-10.8-Mu-M in Electric-Field-Biased AlGaAs Quantum zWellsv!=ob03.3.4!=ob!=ob Physical Review Letters!=ob zArticle$M_4l@_d 1989 FEB 27 $M_4l@_d62$M_4l@_d9$M_4l@_d 1041-1z044 $M_4l@_d%@\\As01mesant\Procite Databases\WCS\Articles\Fejer MM 1989 02.pdf@$M_4l@_d+153$M_4l@_d7z180{1 DEC 2 $M_@_j567$M_@_j523$M_@_j5 3298-3301 $M_@_j5%:\\Aeron\{1 DEC 2 $M_@_j567$M_@_j523$M_@_j5 3298-3301 $M_@_j5%:\\Aeron\{1 DEC 2 $M_@_j567$M_@_j523$M_@_j5 3298-3301 $M_@_j5%:\\Aeron\{1 DEC 2 $M_@_j567$M_@_j523$M_@_j5 3298-3301 $M_@_j5%:\\Aeron\l,N~/{;@*kGoni, A. R. //Pinczuk, A. //Weiner, J. S. //Calleja, J. M. //Dennis, B. S. //Pfeiffer, L. N. //West, K. W. ko=t0LAt&T Bell Labs/Murray Hill//Nj{/07974 ; Univ Autonoma Madrid/Madrid 34//SpainLo=t0dOne-Dimensional Plasmon Dispersion and Dispersionless Intersubband Excitations in GaAs Quantum Wiresd{o=t003.4.1o=t0 Physical Review Letterso=t0 Article$M_@_j5 199{1 DEC 2 $M_@_j567$M_@_j523$M_@_j5 3298-3301 $M_@_j5%?\\As01me{sant\Procite Databases\WCS\Articles\Goni AR 1991 12.pdf?$M_@_j5*The energy and the wave-vector dispersion of single-particle and collective excitations of the one-d{imensional (1D) electron gas in GaAs quantum wires have been determined by resonant inelastic light scattering. In the 1D quantum limit the intrasubband plasmon displays the linear dispersion characte{ristic of 1D free-electron behavior. Quantitative agreement is found with calculations based on the random-phase approximation. In contrast, collective 1D intersubband excitations appear as dispersion|;=?4`Goossen, K. W. //Caridi, E. A. //Chang, T. Y. //Stark, J. B. //Miller, D. A. B. //Morgan, R. A. `h=tz5GAt&T Bell Labs/Holmdel//Nj/07733 ; at&T B|ell Labs/Murray Hill//Nj/07974Gh=tz5wObservation of Room-Temperature Blue Shift and Bistability Strained InGaAs-GaAs (111) Self-Electro-Optic Effect DevicewaAsB@=hpE̬)01.5.4 Hydrogen Complexes and Passivation)=hp3^N~/,~;@fBJohnson, N. M. //Burnham, R. D. //Street, R. A. //Thornton, R. L. B@=hpE̬0Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/943040@~=hpE̬BHydrogen Passivation of Shallow-Acceptor Impurities in P-Type GaAsB@=hpE̬)01.5.4 Hydrogen Complexes and Passivation)=hp~E̬ "Physical Review B-Condensed Matter"@=hpE̬ Article$M_$&@_&d1986 January 15$M_$&@_&d33~$M_$&@_&d2$M_$&@_&d 1102-1105 $M_$&@_&d%B\\As01mesant\Procite Databases\WCS\Articles\Johnson NM 1986 0~e1.pdfB$M_$&@_&d+124$M_$&@_&d7270ފ(=@bNelson, Ronald J.//Wilson, R.B.0=sx0=sx0=sxMElimination of mask undercutting in the fabrication of InP/InGaAsP BH devicesM0=sx10.3.20=sxAt&T Bell Laboratories0=sx7065180=sx US4566171 0=sxUS0=sx 1/28/1986 0=sxGJP06021575A2 JP06073390B4 JP06093527B4 JP60018991A2 US4566171 US4661961G0=sxEUS3833435 US4137107 US4366569 US4426700 US4426702 US4481631 US4496403E0ފ(=1?l5Hayakawa, Toshiro//Suyama, Takahiro//Yamamoto, Saburo5L=pu|-\0Method of producing a semiconductor laser device0L=pu|-+[N~$47065180=sx US4566171 0=sxUS0=sx 1/28/1986 0=sxGJP06021575A2 JP06073390B4 JP06093527B4 JP60018991A2 US4566171 US4661961G0=sxEUS3833435 US4137107 US4366569 US4426700 US4426702 US4481631 US4496403E0=sx"R. J. Nelson, R. B. Wilson, P. D. Wright, P. A. Barnes and N. K. Dutta, ""CW Electrooptical Properties of InGaAsP (.lambda.- 1.3 um) Buried-Heterostructure Lasers"", IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 202-206.; R. J. Nels"0=sx"US4647320 US4661175 US4694311 US4701927 US4702781 US4729963 US4779281 US4783425 US4818722 US4888085 US4891093 US4935936 US4963507 US4972238 US4981814 US4984244 US5059552 US5075239 US5236864 US5298456 US5441912 US5506170 US58519280=sx\10.3.2jy=pu|-\Sharp Kabushiki KaishaL=pu|-\508240L=pu|-\ US4567060 L=pu|-\JPL=pu|-\ 1/28/1986 L=pu|-\_DE3485924C0 DE3485924T2 EP0142845A2 EP0142845A3 EP0142845B1 JP01018590B4 JP60110188A2 US4567060_L=pu|-\'US4269635 US4355396 US4371968 US4480331'L=pu|-\"5US4647320 US4725450 US4734385 US4746626 US4783425 US4788159 US4829023 US4839307 US4855250 US4890293 US4907974 US4926431 US4999841 US5058120 US5153148 US5173913 US5194400 US5395792 US5445993 US5583880 US5587334 US5751752 US5801071 US5835516 US5974069 US6009112^L=pu|-\+31L=pu|-\63340=pu|-\63340^N~,/%;\\As01mesant\Procite Databases\WCS\Patents\US04566171__.pdf;0=sx'"H01L 21/20, H01L 21/302"0=sx+230=sx63330ފ(=@l5Hayakawa, Toshiro//Suyama, Takahiro//Yamamoto, Saburo5L=pu|-\0Method of producing a semiconductor laser device0L=pu|-\10.3.2jy=pu|-\Sharp Kabushiki KaishaL=pu|-\508240L=pu|-\ US4567060 L=pu|-\JPL=pu|-\ 1/28/1986 L=pu|-\_DE3485924C0 DE3485924T2 EP0142845A2 EP0142845A3 EP0142845B1 JP01018590B4 JP60110188A2 US4567060_L=pu|-\'US4269635 US4355396 US4371968 US4480331'L=pu|-\"5US4647320 US4725450 US4734385 US4746626 US4783425 US4788159 US4829023 US4839307 US4855250 US4890293 US4907974 US4926431 US4999841 US5058120 US5153148 US5173913 US5194400 US5395792 US5445993 US5583880 US5587334 US5751752 US5801071 US5835516 US5974069 US6009112esonance in a Periodically Modulated Two-Dimensional Electron-GasW`C=Ft>(02.5.4`C=Ft>( Physical Review Letters`C=Ft>( Article$M_td@_\.t 1989 Apr 24 $M_td@_\.t62$M_td@_\.t17$M_td݁@_\.t 2020-2023 $M_td@_\.t%@\\Aeron\Procite Databases\WCS\Articles\Beenakker CWJ 1989 04.pdf'$M_td@_\.t$M_td@_C\.t+194$M_td@_\.t3950Aq2/*ފ(=@vBaliga, Bantval J.C=йsGInversion-mode insulated-gate gallium arsenide field-effect transistorsGC=йs09.1.1C=йsGeneral Electric CompanyC=йs218550C=йs US4568958 C=йsUSC=йs2/4/1986C=йs.FR2557727A1 FR2557727B1 JP60227476A2 US4568958.C=йsUS4160261 US4236166 US4262296C=йs"T. Ito et al., ""The GaAs Inversion-Type MIS Transistors,"" Solid-State Electronic, vol. 17, pp. 751-759 (1974).; C. W. Wilmsen et al., ""MOS Processing for III-V Compound Semiconductors: Overview and Bibliography,"" Thin Solid Films, vol. 46, pp. 17-45 (1977).; A. L. Lile et al., ""n-Channel Inversion-Mode InP M.I.S.F.E.T.,"" Electronics Letter, vol. 14, No. 20, pp. 657-659, (Sep. 20, 1978).; T. Kawakami et al., ""InP/Al.sub.2 O.sub.3 n-Channel Inversion-Mode M.I.S.F.E.T.S Using Sulfur Diffused Source and Drain"", Electronics Letters, vol. 15, No. 16, pp. 502-504 (8/2/79).; A. S. H. Liao et al., An In.sub.0.53 Ga.sub.0.47 As/Si.sub.3 N.sub.4 n-Channel Inversion Mode MISFET, IEEE Electron Device Letters, vol. EDL-2, No. 11, pp. 288-290, (1981).; R. E. Enstrom et al., Vapour Growth of Ga.sub.x In.sub.x-1 As as Alloys for Infrared Photocathode Applications, 1970 Symposium on GaAs, paper 3, pp. 30-40."Cފ(=1?ASakai, K.//Matsushima, Yuichi//Akiba, Shigeyuki//Utaka, Katsuyuki:=Ry:=Ry8:=Ry5048036 US5568498 US5781575^N~ /\An intellectual movement which takes a position at variance with existing beliefs is frequently forced into overstating its claims in order to differentiate itself from the position it argues against. Thus some Marxists have argued that the ultimate cause of all social phenomena can be traced to economic forces, and some Freudians that all neurosis is a result of sexual repression. Some constructivists similarly overstate their case in arguing that nature has no influence on the development of science. In the past, sociologists believed that because the content of science was ultimately determined by nature, the content of science was not a topic that they could fruitfully investigate. The constructivists therefore remain fearful that if nature is even included as one of several influences on the cognitive content of science, then social influences will be seen as secondary or unimportant. p. xii: In this book I make a distinction between the research frontier and the core of scientific knowledge. The research frontier in any discipline consists of all new work which is in the process of being evaluated by the community. The core is the exceedingly small number of contributions which are accepted by the community as important and true. There is a low level of consensus on frontier knowledge and a high level of consensus on core knowledge. Here, too, my approach is si milar to that of the constructivists, particularly Latour (1987), who makes the distinction between science in the making and facts. The first type of science is seen as being the work of individua l scientists and contextually contingent, the second type a result of the laws of nature. p. 1: This book examines the ways in which social processes and variables influence the growth of scientific ^N~*T:=Ry%;\\As01mesant\Procite Databases\WCS\Patents\US04573161__.pdf;:=Ry' H01S 3/19 :=Ry+25(:=Ry63360;@/Lautenschlager, P. //Garriga, M. //Cardona, M. /h= zj 7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007h= zj HTemperature-Dependence of the Interband Critical-Point Parameters of InPGh= zj h= zj 05.1.2h= zj  "Physical Review B-Condensed Matter"h= zj  ArticleO$M_<t@_l'M 1987 SEP 15 O$M_<t@_l'M36O$M_<t@_l'M9O$M_<t@_l'M 4813-4820 O$M_<t@_l'M%H\\As01mesant\Procite Databases\WCS\Articles\Lautenschlager P 1987 09.pdfHO$M_<t@_l'M)A basic quantity describing the linear response of the material to the electric field of an electromagnetic wave is the dielectric function e(w). ThisCambridge, MassachussettsHFX Harvard University PressHFX 1992HFX )Ep. x: An intellectual movement which takes a position at variance with existing beliefs is frequently forced into overstating its claims in order to differentiate itself from the position it argues against. Thus some Marxists have argued that the ultimate cause of all social phenomena can be traced to economic forces, and some Freudians that all neurosis is a result of sexual repression. Some construc/ymbol_<t@_l'M7370N~L/ function, on the other hand, is directly related to the electronic b and structure and thus allows experimental investigations of the effects on the band structure of changes in the material parameters and of external perturbations. Spectroscopic ellipsometry is highly suitable to determine the dielectric function of many semiconductors in the 1.5-1.6eV region and to investigate the dependence of the dielectric function on perturbations such as temperature, concentrations of donors and acceptors, and composition in mixed crystals. The structures observed in the e(w) spectra are attributed to interband critical points (CP's) which can be analyzed in terms of standard analytic line shapes: e(w) = C - Aeif(w-E+iG)n. The critical point parameters amplitude A, energy threshold E, broadening G, and excitonic phase angle f are determined by fitting the numerically obtained second-derivative spectra d2e(w)/dw2 of the experimental e(w). (The exponent n has the value -1/2 for 1D, 0 for 2D a nd 1/2 for 3D CP's. Discrete excitons with Lorentzian lineshape are represented by n=-1.) The CP's are directly related to regions of large or singular joint electronic density of states, so that di rect information on the energy separation and broadening of valence and conduction bands is obtained which can be compared to band-structure calculations. The energies for the various CP's as a funct ?=1? 00.1HF Cole, Stephen HF+Making Science: Between Nature and Society+HFCambridge, MassachussettsHFX Harvard University PressHFX 1992HFX )Ep. x: ^N~2Dd knowledge. It will challenge the view that the behavior of scientists as they go about their work is less subject to the influence of social processes than is the behavior of people in other occupati ons. At the same time the book will call for caution in concluding, as do many contemporary sociologists of science, that the content of science is determined solely by social variables. p. 3: Until recently, most sociologists felt that the discipline could reveal very little about the content of the natural sciences. In the 1920s, the sociologist of knowledge Karl Mannheim ([1929] 1954) concluded that, although the content of social science ideas could be explained by examining the social contexts in which they were produced and the sociopolitical positions of their authors, the content of the natural sciences was not dependent upon these variables. Following the then widely accepted positivist or realist view of science, he believed the content of the natural sciences to be ultimately determined by facts or reality. In natural science, at least, a truth existed, and any scientific theory which did not express that truth would eventually be found to be inconsistent with empirical data and ultimately discarded. In this sense, natural scientists were trying to discover the next page of a book that had already been written, whose conclusion, though currently unknown, was y determined by facts or reality. In natural science, at least, a truth existed, and any scientific theory which did not express that truth would eventually be found to be inconsistent with empirical data and ultimately discarded. In this sense, natural scientists were trying to discover the next page of a book that had already been written, whose conclusion, though currently unknown, was ^N~ \lpredetermined or inevitable. Nature, rather than sociological processes, determined the way in which scientific knowledge developed. p. 3: This view, still held by the majority of scientists (including sociologists), was the underlying assumption of most work in the sociology of science until the 1970s. The belief that social factors were not a significant influence on the content of science was at least implicitly adopted by Merton, the founding father of the sociology of science. In Science, Technology, and Society in Seventeenth-Century England ([1938] 1970), he stated that he was not trying to explain the specific content of the scientific ideas developed. Specific discoveries and inventions belong to the internal history of science and are largely independent of factors other than the purely scientific (p. 75). In his philosophy of science, Merton, like the great majority of his contemporaries, was a positivist. To a certain degree, a fixed order must prevail in the appearance of scientific discoveries; each discovery must await certain prerequisite developments (p. 77). In the annotated version of his famous and now controversial 1942 paper on the norms of science reprinted in Social Theory and Social Structure (rev. ed. 1957a), Merton indicated his belief that sociology could not explain the content of science, which was ultimately determined by nature. p. 7: Following philosophers such as Pierre Duhem and W.V. Quine, Kuhn rejects the notion that empirical observations are objective; different scientists can formulate differing and sometimes diametrically opposed interpretations of the same data. When he looks at the relationship between theory and observations, he finds that the observations are influenced at least as much by theory as the other ^N~ dtway around. Data are thus theory-laden. The views of science projected by the writings of Kuhn give primacy in science to theory. Rather than experimental and observational data being the determinant of the course of science, theories determine what evidence is looked for and what evidence is taken seriously. p. 10: Kuhn rejects the assumption that one idea can be proved to be better than another by empirical data. He argues that when a new paradigm does emerge, it is not adopted on empirical grounds. He concludes that the competition between paradigms is not the sort of battle that can be resolved by proofs ([1962] 1970, p. 148). Kuhns position leaves the question of consensus unanswered. If ideas are not tested with objective empirical observations and if the choice between two competing theories cannot be made on the basis of fit with evidence, how is this choice made? Kuhn does not provide a detailed answer to this question. Sometimes he implies that scientists will ma ke their choices based upon aesthetic criteria or upon which paradigm will yield the most new puzzles. But he never gives a full description of how scientists actually use such criteria. p. 16: The !research frontier is linked to the core through the evaluation process. A large majority of new scientific contributions produced at the frontier turn out to be of little or no lasting significance ("J.R. Cole and S. Cole, 1972). For example, consider a sample of 1,187 papers published in 1963 in the Physical Review, one of the two most prestigious physics journals in the world. Three years afte#r publication about half of these papers had received one or no citations; only 15 percent had received six or more citations (S. Cole, 1970). Most of the work produced at the frontier has little or ^N~ l|$no impact on the development of community-based knowledge. p. 16: It is necessary for sociologists of science to make this distinction between core and frontier because the social character of knowle%dge in these two components differs dramatically. Core knowledge is characterized by virtually universal consensus. Scientists accept this knowledge as a given and as a starting point for their rese&arch. Empirical evidence which might not fit in with core knowledge is generally overlooked or rejected. Because scientists accept core knowledge as being true, they see its content as determined by' the laws of nature. In frontier knowledge different scientists looking at the same empirical evidence can reach different conclusions. Frontier knowledge is accepted by scientists not as true but a(s the claims to truth of particular scientists. If look only at core knowledge and at what scientists say about core knowledge, we will conclude that science is adequately described by the traditiona)l view. If we look at frontier knowledge, however, we will find little confirmation for much of the traditional view. [But] determining how much consensus there is in a particular scientific researc*h area is a difficult problem, both methodologically and conceptually, and we shall return to it in a later section. p. 18: Science seems to tolerate high levels of ambiguity and disagreement and in +some areas of science it is possible that ambiguity in a theory will be a characteristic which will contribute to the theorys perceived importance. Ambiguous but interesting theories will allow ma,ny different scientists to use them in varying ways. The ambiguous theory becomes a stimulus for additional research and permits substantial individual creativity while maintaining the consensus nece^N~ t-ssary for scientific work to proceed. This role might be referred to as the function of limited obscurantism. p. 27: I will argue that scientists evaluate discoveries according to their utility in. generating new research puzzles and in solving existing ones. Although nature may not completely determine the content of a highly useful discovery, in some cases nature places strict limits on what/ is likely to be perceived as a useful solution. In fact it is possible that the existing body of knowledge, evidence from the empirical world, and the ways in which scientists are trained act togeth0er to put severe constraints on what is likely to be put forth as a solution to any scientific problem. These factors would work together to rule out the great majority of possible solutions; but the1y may not determine which among a small set of possible but different solutions is the right one. My position is that cognitive factors and social factors interact to determine the fate of a new co2ntribution. Leaving out either set of factors will lead to a one-sided and unrealistic view of how science is actually done. p. 47: The attributes of contributions which influence their reception wi3ll differ from research area to area and over time. Let us call these attributes the perceived utility of a scientific contribution. I believe that because of the openness of science and its highly 4decentralized structure the utility of a scientific idea will have a significant influence on its fate. Utility has two general components. First, an idea is useful if other scientists can build upo5n it or use it in their own work. This type of idea is in Kuhns terms puzzle generating. Second, an idea is useful if it works, that is, if it generates results which are expected or which can fi^N~ |6t in with other scientific ideas. We may call such ideas puzzle solving. An idea can have high utility if scientists perceive it to have the potential to generate solutions to many scientific prob7lems. Some scientific contributions, such as the chemical sequence of TRF, were both puzzle generating and puzzle solving. p. 51: When the Watson and Crick paper was published, the other scientists 8working on the DNA problem were motivated not to accept it as a fact but to find something wrong with it or to find it unconvincing. Their career interests motivated them to reject rather than accept9 the Watson and Crick model. When they could not find anything wrong with it, and indeed it seemed to all to be true, they had to accept it and it became a fact. The acceptance as opposed to the dis:covery was not a result of rhetoric, contextual conditions, or special machinery available to Watson and Crick. The conclusion that there was something about the content of their model which influenc;ed its rapid acceptance by others does not seem to be farfetched. p. 79: Almost every sociologist who does empirical work and is interested in relatively broad theoretical or substantive issues knows< that there is frequently a large gap between the collection and analysis of data on the one hand and the interpretation of that data on the other. When a sociologist sits down with many tables and e=mpirical analyses before her, there is no one way in which the story as it is presented in a paper, chapter, or a book can be told. Putting the research together in a coherent way is a creative act. > A similar point is made by Holmes (1987), who relates how Lavoisiers theory of combustion and his discovery of oxygen emerged only as he was writing up his results for publication. p. 82: I will ^N~ ?examine data collected in a study of how grant proposals are reviewed at the National Science Foundation (NSF). These data will show that there is so much disagreement among equally qualified reviewe@rs of a proposal that whether or not a proposal is funded is to a large extent a result of luck in the program directors choice of reviewers. p. 83: The case studies of theories such as the Watson aAnd Crick model and the studies of consensus on journal articles and grant proposals seem to lead to contradictory conclusions. But contradiction exists only if we expect to find similar levels of conBsensus in all parts of scientific knowledge. I have argued that knowledge can be divided into two principal components: the research frontier and the core. The lack of consensus at the frontier in tChe natural sciences is evidenced by studies of journal and grant refereeing and by many of the case studies conducted by constructivist sociologists and contemporary historians and philosophers of sciDence. p. 107: Characteristics of different types of science. E.g., in rate of obsolescence. Top of hierarchy: high proportion of references to recent work as older work becomes obsolete indicatinEg significant cumulation of knowledge. Bottom of hierarchy: Low proportion of references to recent work as older work remains just as important as new work indicating lack of significant cumulationF of knowledge. p. 129: The differences between the chemistry and physics textbooks, on the one hand, and the sociology textbooks, on the other, are striking. The overwhelming preponderance of materiGal discussed in undergraduate chemistry and physics textbooks was produced prior to 1960. Only 6 percent of the references in chemistry texts and 3 percent of those in physics texts were to work publ^N~ Hished after 1959. The exact opposite is true of sociology textbooks. Fully 75 percent of all references were to work published after 1959. p. 199: Polanyi (1958), in his book Personal Knowledge, giIves many examples of scientists who continued to maintain their adherence to theoretical positions in the face of significant negative evidence or anomalies. But whereas some might find such behaviorJ opprobrious, Polanyi argues that because consensus is necessary for scientific progress, scientists must frequently ignore anomalies in order to maintain consensus and, most important, that this behaKvior facilitates rather than impedes scientific progress: It is the normal practice of scientists to ignore evidence which appears incompatible with the accepted system of scientific knowledge, in tLhe hope that it will eventually prove false or irrelevant. The wise neglect of such evidence prevents scientific laboratories from being plunged forever into a turmoil of incoherent and futile effortMs to verify false allegations. p. 207: Price (1986) then correlates the number of scientists with the size of the countrys gross national product. He concludes: The share each country has of theN worlds scientific literature by this reckoning turns out to be very close almost always within a factor of w to that countrys share of the worlds wealth (measured most conveniently in terms of GONP). p. 207: The theory that I am exploring states that the rate of scientific advance in a given society at a given time will depend upon the number of talented people who choose science as a careerP. Scientific advance is uniformly defined as the number of significant scientific discoveries made. Measuring what is an important discovery and counting them is a tricky methodological problem wh^N~ Qich will be discussed below. p. 217: The Ortega Hypothesis. Influenced by the work of Price, Jonathan R. Cole and I in the early 1970s investigated the hypothesis that it might be possible to reducRe the size of science without a corresponding decline in the quality of science. It seemed clear on the basis of the distribution of publications and of citations to these publications that only a smSall portion of all scientists actually contribute to scientific advance through their published research. It was not clear, however, to what extent the small number of scientists who make the signifiTcant discoveries depend upon the large number of scientists who do less significant work. The research we conducted, published in a paper entitled The Ortega Hypothesis (J.R. Cole and S. Cole, 1972U), aimed at discovering the extent to which scientific advance depends upon the work of all social classes or is primarily dependent on the work of an elite. This hypothesis was tested in severalV different ways. In general, we found that the great bulk of work cited in important discoveries is the work of other eminent scientists. We concluded that the giants of since stand not on the shoulWders of a mountain of dwarfs but on the shoulders of a few other giants. p. 251: Essentially my position is a type of realism which sees the actual content of the scientific work accepted as true by Xa community as being most strongly determined by evidence from the empirical world and by theories or models which attempt to make sense of this empirical evidence. This position is taken not as a reYsult of any philosophical antipathy to relativism but because the analyses of the relativists have been unable to answer the question of why one truth claim meets quick acceptance and most are ignored^N~ /Z or rejected. p. 280: Daniel Sullivan, D Hywel White and Edward J Barboni. 1977. The State of a Science: Indicators in the Specialty of Weak Interactions. Social Studies of Science 7: 167-200.[uHFX ?HFX HFX "HFX FHFX \HFX HFX  HFX (HFX HFX 1HFX ]HFX  HFX HFX  HFX 66080;@KLee, T. P. //Burrus, C. A. //Copeland, J. A. //Dentai, A. G. //Marcuse, D. K=`w Ȓ3Bell Tel Labs Inc,Crawford Hill Lab,Guided Wave Res3=`w ȒnShort-Cavity InGaAsp Injection-Lasers: Dependence of Mode Spectra and Single-Longitudinal-Mode Power on Cavityn=`w Ȓ10.4.1=`w Ȓ #IEEE Journal of Quantum Electronics#=`w Ȓ Article $M_l \ @_T  l 1982 $M_l \ @_T  l 18 $M_l \ @_T  l 7 $M_l \ @_T  l  1101-1113 $M_l \ @_T  l %>\\As01mesant\Procite Databases\WCS\Articles/Lee TPl 1982 07.pdf> $M_l \ @_T  l +122 $M_l \ @_T  l 7400;1?*Mailhiot, C. //Duke, C. B. //Chadi, D. J. *(6=tBPdXerox Corp,Webster Res Ctr,Bldg 114,800 Phillips ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/| <~e;@.Menendez, J. //Cardona, M. @=Pn`7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007@=Pn`]Interference Effects: a Key to Understanding Forbidden Raman-Scattering by Lo Phonons in GaAs]@=Pn`05.1.3=Pn` "Physical Review B-Condensed Matter"@=Pn` Article $M_l\@_Txl  1985 Mar 15 $M_l\@_Txl 31 $M_l\@_Txl 6 $M_l\@_Txl  3696-3704 $M_l\@_Txl %B\\As01mesant\Procite Databases\WCS\Articles\Menendez J 1985 03.pdfB $M_l\@_Txl 9+111 $M_l\@_Txl 7470\%@_d.T0@_L02d%+108%@_d.T0@_L02d%64720N, HOKKAIDO UNIV, FAC SCI, DEPT PHYS, SAPPORO, HOKKAIDO 060, JAPAN, ATT80 Copyright 2003 SciSearch PlusNST TECHNOL, IMAGING SCI & ENGN LAB, 4259 NAGATSUDA, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN, HOKKAIDO UNIV, FAC SCI, DEPT PHYS, SAPPORO, HOKKAIDO 060, JAPAN, ATT80 Copyright 2003 SciSearch PlusNST TECHNOL, IMAGING SCI & ENGN LAB, 4259 NAGATSUDA, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN, HOKKAIDO UNIV, FAC SCI, DEPT PHYS, SAPPORO, HOKKAIDO 060, JAPAN, ATT80 Copyright 2003 SciSearch PlusNST TECHNOL, IMAGING SCI & ENGN LAB, 4259 NAGATSUDA, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN, HOKKAIDO UNIV, FAC SCI, DEPT PHYS, SAPPORO, HOKKAIDO 060, JAPAN, ATT80 Copyright 2003 SciSearch PlusNST TECHNOL, IMAGING SCI & ENGN LAB, 4259 NAGATSUDA, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN, HOKKAIDO UNIV, FAC SCI, DEPT PHYS, SAPPORO, HOKKAIDO 060, JAPAN, ATT80 Copyright 2003 SciSearch Plus/N~N//wXv "Physical Review B-Condensed Matter"a=`/wXv Article$M_@_ 1991 Jul 15 $M_@_44$M_@_4$M_@_ 1646-1656 $M_@_%E\\As01mesant\Procite Databases\WCS\Articles\Beenakker CWJ 1991 07.pdf,$M_@_$M_@_*A linear-response theory is developed for resonant tunneling through a quantum dot of small capacitance, in the regime of thermally broadened resonances. The theory extends the classical theory of Coulomb-blockade oscillations by Kulik and Shekhter to the resonant-tunneling regime. Both the cases of negligible and strong inelastic scattering in the quantum dot are considered. Effects from the non-Fermi-Dirac distribution of electrons among the energy levels (occurring when kT is comparable to the level separation) are fully included. Explicit analytic results are obtained for the periodicity, amplitude, line shape, and activation energy of the conductance oscillations.$M_@_+339$M_@_,ADimensional Electron-Gas/ Density/ States/ Gaas/ Junctions ChargeA$M_@_3930 Effects: a Key to Understanding Forbidden Raman-Scattering by Lo Phonons in GaAs]@=Pn`05.1.3=Pn` "Physical Review B-Condensed Effects: a Key to Understanding Forbidden Raman-Scattering by Lo Phonons in GaAs]@=Pn`05.1.3=Pn` "Physical Review B-Condensednese Journal of Applied Physics Part 2-Letters23=sBrN~k/s>@5Tachikawa, M.//Mizuta, M.//Kukimoto, H.//Minomura, S.53=sMA Simple Calculation of the DX Center Concentration based on an L-Donor ModelM3=s01.5.2 Metastable Centers: DX3=s 2Japanese Journal of Applied Physics Part 2-Letters23=s1985%@_d.T0@_L02d%24%@_d.T0@_L02d%10%@_d.T0@_L02d% L821-L823 %@_d.T0@_L02d%%C\\As01mesant\Procite Databases\WCS\Articles/Tachikawa M 1985 10.pdf,%@_d.T0@_L02d%%@_d.T0@_L02d%' 0021-4922 %@_d.T0@_L02d%)ENGLISH TOKYO INST TECHNOL, IMAGING SCI & ENGN LAB, 4259 NAGATSUDA, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN, HOKKAIDO UNIV, FAC SCI, DEPT PHYS, SAPPORO, HOKKAIDO 060, JAPAN, ATT80 Copyright 2003 SciSearch Plusa%@_d.T0@_L02d%+108%@_d.T0@_L02d%64720ence in Heavily Doped GaAs. 1. Temperature and Hole-Concentration DependenceY=is.01.4.2 "Shallow" Extended-Wave-Function Levels.=isence in Heavily Doped GaAs. 1. Temperature and Hole-Concentration DependenceY=is.01.4.2 "Shallow" Extended-Wave-Function Levels.=is$M_fg@_gd%:\\Aeron\Procite Databases\WCS\Articles\Olego D 1980 07.pdf:$RM_fg@_gd+121$M_fg@_gd7550ފ(=1?9Scifres, Donald R.//Streifer, William//Burnham, Robert D.9=8 t2Combination index/gain guided semiconductor lasers2=8 t'WN~;@+Qian, G. X. //Martin, R. M. //Chadi, D. J. +f=Bu6Brookhaven Natl Lab,Dept Phys/Upton//Ny/11973 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/94304f=Bu6u1st-Principles Study of the Atomic Reconstructions and Energies of Ga-Stabilized and As-Stabilized GaAs(100) SurfacesUf=Bu6f=Bu6f=Bu606.2.1*f=Bu6 "Physical Review B-Condensed Matter"f=Bu6 Article$M_./@_/3| 1988 Oct 15 $M_./@_/3|38$M_./@_/3|11$M_./@_/3| 7649-7663 $M_./@_/3|%?\\As01mesant\Procite Databases\WCS\Articles\Qian GX 1988 10.pdf?$M_./@_/3|8+171$M_./@_/3|7600mUX=>r$@01.5.2 Metastable Centers: DXX=>r$@ 2Japanese Journal of Applied Physics Part 2-Letters2X=>r$mUX=>r$@01.5.2 Metastable Centers: DXX=>r$@ 2Japanese Journal of Applied Physics Part 2-Letters2X=>r$'9$M_99@_܊9&99$M_99@_܊9&9' 0021-4922 9$M_99@_܊9&9)English Tokyo Inst Technol Imaging Sci & Engn Lab, 4259 Nagatsuda, Midori Ku, Yokohama, Kanagawa 227, JAPAN, Hokkaido Univ, Fac Sci Dept Phys, Sapporo, Hokkaido 060, JAPAN, ADG80 Copyright 2003 SciSearch Plus^.^N~/*WCS\Patents\US04594718__.pdf;=8 t' H01S 3/19 =8 t+21=8 t63380q;@$Beenakker, C. W. J. //Vanhouten, H. $@=t<=X/Philips Res Labs/5600 Ja Eindhoven//Netherlands/@=t<=X1Quantum Transport in Semiconductor Nanostructures1@=t<=X02.5.0@=t<=X ;Solid State Physics-Advances in Research and Applications ;;@=t<=X Review $M_@_ 1991 $M_@_ 44 $M_@_ 1-229@=t<=X%B\\As01mesant\Procite Databases\WCS\Articles/Beenakker CWJ 1991.pdfB $M_@_ +735 $M_@_ ,Dimensional Electron-Gas/ Silicon Inversion-Layers/ Conductance Fluctuations/ Gaas-Alxga1-Xas Ballistic Point Contacts/ Weakly Localized Regime/ Molecular-Beam Epitaxy/ Strong Magnetic-Fields/ Normal- Rings/ Negative DiffereDntial Conductivity $M_@_ 3980;h1?EOlego, D. //Chang, T. Y. //Silberg, E. //Caridi, E. A. //Pinczuk, A. E=s^#Bell Tel Labs Inc/Holmdel//Nj/07733#=s^=s^=s^=s^=s^=s^01.3.3 Electron Bandgaps=s^ Applied Physics Letters=s^ Article$M_ Applied Physics Letters=s^ Article$M_F"6f*;@QPearsall, T.P. //Capasso, F. //Nahory, R. E. //Pollack, M. A. //Chelikowsky, J.R.Qx=r FKThomson Csv,Lcr/F-91401 Orsay//France ; Bell Tel Labs Inc/Holmdel//Nj/07733Kx=r FWBand-Structure Dependence of Impact Ionization by Hot Carriers in Semiconductors - GaAsWx=r FO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOx=r F Solid-State Electronicsx=r F Article$M_@_D1978$M_@_D21$M_@_D1$M_@_D297-302$M_@_D%@\\As01mesant\Procite Databases\WCS\Articles/Pearsall TP 1978.pdf,=r F=r F+122$M_@_D7570ox Corp,Palo Alto Res Ctr/Palo Alto//Ca/94304f=Bu6u1st-Principles Study of the Atomic Reconstructions and Energies of Ga-Stabilized and As-Stabilized GaAs(100) Surox Corp,Palo Alto Res Ctr/Palo Alto//Ca/94304f=Bu6u1st-Principles Study of the Atomic Reconstructions and Energies of Ga-Stabilized and As-Stabilized GaAs(100) Sur$M_./@_/3| 7649-7663 $M_./@_/3|%:\\Aeron\Procite Databases\WCS\Articles\Qian GX 1988 10.pdf:$M_./@_/3|+1731$M_./@_/3|7600s>h1?5Mizuta, M.//Tachikawa, M.//Kukimoto, H.//Minomura, S.5X=>r$@UDirect Evidence for the DX Center being a Substitutional Donor in AlGaAs Alloy SystelGaAs Alloy Syste4N~s>@5Mizuta, M.//Tachikawa, M.//Kukimoto, H.//Minomura, S.5X=>r$@UDirect Evidence for the DX Center being a Substitutional Donor in AlGaAs Alloy SystemUX=>r$@01.5.2 Metastable Centers: DXX=>r$@ 2Japanese Journal of Applied Physics Part 2-Letters2X=>r$@19859$M_99@_܊9&9249$M_99@_܊9&929$M_99@_܊9&9 L143-L146 9$M_99@_܊9&9%=\\As01mesant\Procite Databases\WCS\Articles\Mizuta M 1985.pdf,9$M_99@_܊9&99$M_99@_܊9&9' 0021-4922 9$M_99@_܊9&9)English Tokyo Inst Technol Imaging Sci & Engn Lab, 4259 Nagatsuda, Midori Ku, Yokohama, Kanagawa 227, JAPAN, Hokkaido Univ, Fac Sci Dept Phys, Sapporo, Hokkaido 060, JAPAN, ADG80 Copyright 2003 SciSearch Plus9$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&9 9$M_99@_܊9&99$M_99@_܊9&9 9$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_;1?KSaihalasz, G. A. //Chang, L. L. //Welter, J. M. //Chang, C. A. //Esaki, L. K=x?p7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/1059877Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/1057^N~ 9$M_99@_܊9&99$M_99@_܊9&9 9$M_99@_܊9&99$M_99@_܊9&9 9$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&99$M_99@_܊9&909$M_99@_܊9& :9+2309$M_99@_܊9&964730;@KSaihalasz, G. A. //Chang, L. L. //Welter, J. M. //Chang, C. A. //Esaki, L. K=x?p7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=x?p:Optical-Absorption of In1-Xgaxas-Gasb1-Yasy Super-Lattices:=x?p04.3.2=x?p Solid State Communications=x?p Article$M_@_|'1978$M_@_|'27$M_@_|'10$M_@_|'935-937$M_@_|'%B\\As01mesant\Procite Databases\WCS\Articles/Sandercock JR 1978.pdfB$M_@_|'+6108$M_@_|'7620;[?TSakaki, H. //Chang, L. L. //Ludeke, R. //Chang, C. A. //Saihalasz, G. A. //Esaki, L.T 7-=Ps207Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/1051977.pdf8$M_@_L+140$M_@_L7640+140$M_@_L7640>0`~)/;@TSakaki, H. //Chang, L. L. //Ludeke, R. //Chang, C. A. //Saihalasz, G. A. //Esaki, L.T 7-=Ps207Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987 7-=Ps20?In1-xGaxAs-GaSb1-yAsy Heterojunctions by Molecular-Beam Epitaxy  7-=Ps20 7-=Ps20 7-=Ps20 7-=Ps20 7-=Ps20 7-=Ps20 7-=Ps20 7-=Ps20* 7-=Ps2002.3.4 7-=Ps20 Applied Physics Letters 7-=Ps20 Article$M_@_L1977$M_@_L31$M_@_L3$M_@_L211-213$M_@_L%=\\As01mesant\Procite Databases\WCS\Articles/Sakaki H 1977.pdf=$M_@_L+140$M_@_L7640q;h1?!Bernholc, J. //Pantelides, S. T. !h=uP̬7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987h=uP̬uScatteeep" Localized-Wave-Function Levels,h=uP̬ "Physical Review B-Condensed Matter"h=uP̬ Article$M_@_L 1978 Aug 15 $M_@_L18$M_@_L4$M_@_L 1780-1789 $M_@_L%=\\Aeron\Procite Databases\WCS\Article IBM CORP, THOMAS J WATSON RES CTR, POB 208, YORKTOWN HTS, NY, 10598 D7564 Copyright 2003 SciSearch PlusoHC#^N~/N+139HC#64740;@9Sanjurjo, J. A. //Lopezcruz, E. //Vogl, P. //Cardona, M. 9g=0rh̬9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9g=0rh̬jDependence on Volume of the Phonon Frequencies and Their Effective Charges of Several III-V Semiconductorsjg=0rh̬01.2.4 Phonons!=0rh̬ "Physical Review B-Condensed Matter"g=0rh̬ Articleg$M_pq@_qg 1983 Oct 15 g$M_pq@_qg28g$M_pq@_qg8g$M_pq@_qg 4579-4584 g$M_pq@_qg%C\\As01mesant\Procite Databases\WCS\Articles\Sanjurjoo JA 1983 10.pdfCg$M_pq@_qg+143g$M_pq@_qg7650WCS\Articles/Scifres DR 1983 01.pdf=$M_@_+144$M_@_7660$M_@_%=\\Aeron\Procite Databases\WCS\Articles/Scifres DR 1983 01.pdf=$M_@_+144$M_@_7660$M_@_%=\\Aeron\Procite Databases\WCS\Articles/Scifres DR 1983 01.pdf=$M_@_+144$M_@_7660$M_@_%=\\Aeron\Procite Databases\WCS\Articles/Scifres DR 1983 01.pdf=$M_@_+144$M_@_7660$M_@_%=\\Aeron\Procite Databases\WCS\Articles/Scifres DR 1983 01.pdf=$M_@_+144$M_@_7660Fv4d ;@RScifres, Donald R. //Lindstrom, C. //Burnham, R. D. //Streifer, W. //Paoli, T. L.  @=Ry~@=Ry~C@=Ry~0Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/943040@=Ry~HPhase-Locked (GaAl)As Laser Diode Emitting 2.6 W Cw From a Single MirrorH@=Ry~10.3.3@=Ry~ Electronics Letters@=Ry~ Article$M_@_1983$M_@_19$M_@_5$M_@_169-171$M_@_%B\\As01mesant\Procite Databases\WCS\Articles/Scifres DR 1983 01.pdfB$M_@_+144$M_@_7660Z$M_h1? Beattie, A. R. //Smith, G. =@ uL3<@Recombination in semiconductors by a light hole auger transition@=@ uL3<O01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO=@ uL3< Physica Status Solidi=@ uL3< 1967$M_@_ 519$M_@_ 52$M_@_ 5577-586=@ uL3<=@ uL3=@ uL3)YN~//>@ Beattie, A. R. //Smith, G. =@ uL3<@Recombination in semiconductors by a light hole auger transition@=@ uL3<O01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO=@ uL3< Physica Status Solidi=@ uL3< 1967$M_@_ 519$M_@_ 52$M_@_ 5577-586=@ uL3<=@ uL3<%@\\As01mesant\Procite Databases\WCS\Articles//Beattie AR 1967.pdf,=@ uL3<=@ uL3<=@ uL3<)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_@_ 5+105$M_@_ 5,A19678922000008$M_@_ 565290pt Phys/Pittsburgh//Pa/15260 ; Westinghouse Elect Corp,Ctr Res & Dev/Pittsburgh//Pa/15235X=r)Ȓ*Methods in Semiconductor Surface-Chemistry*X=pt Phys/Pittsburgh//Pa/15260 ; Westinghouse Elect Corp,Ctr Res & Dev/Pittsburgh//Pa/15235X=r)Ȓ*Methods in Semiconductor Surface-Chemistry*X=s, R.B.x'=@uq6\\As01mesant\Procite Databases\WCS\Articles/Chang RPH 1982.pdf>$M_$\@_T` \+1102$M_$\@_T` \8360;1? Chang, Y. C. //James, R. B. P=qvBԫUniv Illinois,Dept Phys/Urbana//Il/61801 ; Sandia Natl Labs,Div Theoret/Livermore//Ca/94550 ; Univ Illinois,M,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Hawaii Manoa,qg'~T l ;@ Chang, Y. C. //Schulman, J. N. 6= qLdUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Hawaii Manoa,Dept Phys & Astron/Honolulu//Hi/968226= qLdLInterband Optical-Transitions in GaAs-Ga1-xAlxAs and InAs-GaSb Superlattices:6= qLd6= qLd6= qLd04.3.26= qLd "Physical Review B-Condensed Matter"6= qLd Article$M_H\\As01mesant\Procite Databases\WCS\Articles/Cho AY 1978 06.pdf> =@u+135$M_<,@_$<8800;1?"@Choquette, K. D. //Schneider, R. P. //Lear, K. L. //Geib, K. M. @e=p&u ̬$Sandia Natl Labs,Dept Photon Res,Pob$e=p&u >nN~ M ;@"@Choquette, K. D. //Schneider, R. P. //Lear, K. L. //Geib, K. M. @e=p&u ̬$Sandia Natl Labs,Dept Photon Res,Pob$e=p&u ̬NLow-Threshold Voltage Vertical-Cavity Lasers Fabricated by Selective OxidationNe=p&u ̬11.2.2e=p&u ̬ Electronics Letterse=p&u ̬ Article6$M_?A@_A 6 Nov 24, 1994 6$M_?A@_A 6306$M_?A@_A 6246$M_?A@_A 6 2043-2044 6$M_?A@_A 6%D\\As01mesant\Procite Databases\WCS\Articles\Choquette KD 1994 11.pdfDp#=p&u ̬*nNovel vertical-cavity surface emitting lasers fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror are reported. Large cross-sectional area lasers (259 mu m(2)) exhibit threshold current densities of 150 A/cm(2) per quantum well and record low threshold voltage of 1.33V. Smaller lasers (36 mu m(2)) possess threshold currents of 900 mu A with maximum output powers greater than 1mW. The record performance of these oxidised vertical-cavity lasers arises from the low mirror series resistance and very efficient current injection into the active region.n6$M_?A@_A 6+1366$M_?A@_A 6,2Vertical Cavity Surface Emitting Lasers/ Oxidation26$M_?A@_A 6 8840;x1?"Christensen, N. E. =&t7Max Planck Inst Festkorperforsch,Postfach 800665/D-70007=&t;Dipole Effects and Bhesis, Properties and Applications,Pergamon Pr,Pergamon ProN~ L+;@"Christensen, N. E. =&t7Max Planck Inst Festkorperforsch,Postfach 800665/D-70007=&t;Dipole Effects and Band Offsets at Semiconductor Interfaces0=&t =&t02.1.2=&t "Physical Review B-Condensed Matter"=&t Article$M_o\\As01mesant\Procite Databases\WCS\Articles/Deveaud B 1984.pdf>[$M_dtf@_lf[+1038[$M_dtf@_lf[9060r;@lGoetz, K. H. //Bimberg, D. //Jurgensen, H. //Selders, J. //Solomonov, A. V. //Glinskii, G. F. //Razeghi, M. l =u&6Rhein Westfal Th Aachen,Inst Apa Opt Inc,2950 Ne 84th Lane/Blaine//Mn/55449.0=r'IHigh-Electron-Mobility Transistor Based on a GaN-Alxga1-Xn HeterojunctionI0=r'09.1.40=r' Applied Physics Letters0=r' Article-$M_68@_8- Aug 30, 1993 -$M_68@_8-63-$M_68@_8-9-$M_68@_8- 1214-1215 -$M_68@_8-%:\\Aeron\Procite Databases\WCS\Articles\Khan MA 1993 08.pdf:-$M_68@_8-*In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n-GaN-Al0)YN~2,040j.=@>=Khan, M. A. //Bhattarai, A.R. //Kuznia, J. N. //Olson, D. T. 0=r'0=r' 0=r'.Apa Opt Inc,2950 Ne 84th Lane/Blaine//Mn/55449.0=r'IHigh-Electron-Mobility Transistor Based on a GaN-Alxga1-Xn HeterojunctionI0=r'09.1.40=r' Applied Physics Letters0=r' Article-$M_68@_8- Aug 30, 1993 -$M_68@_8-63-$M_68@_8-9-$M_68@_8- 1214-1215 -$M_68@_8-%?\\As01mesant\Procite Databases\WCS\Articles\Khan MA 1993 08.pdf?-$M_68@_8-*In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n-GaN-Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor deposited heterostructure is dominated by two-dimensional electron gas at the heterostructure interface. HEMT devices were fabricated on ion-implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 mum gate length (10 mum channel opening, i.e., source-drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a -6 V gate bias.-$M_68@_;[?#PEisenstein, J. P. //Stormer, H. L. //Narayanamurti, V. //Cho, A. Y. //Tu, C. W. PI=Wtb_$At&T Bell Labs/Murray Hill//Nj/07974$Igo, M. C.//Hwang, D. M.//Chang, C. C. l==qg@"Bell Commun Res/Red Bank//Nj/^N~q ;@#oFischer, R. //Morkoc, H. //Neumann, D. A. //Zabel, H. //Choi, C. //Otsuka, N.//Longerbone, M.//Erickson, L. P. o =u0ԫUniv Illinois,Coordinated Sci Lab,1101 W Springfield ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Purdue Univ,Dept Mat Sci/W Lafayette//in/47907 ; Perkin Elmer/Eden Prairie//Mn/55344 =u0ԫPMaterial Properties of High-Quality GaAs Epitaxial Layers Grown on Si SubstratesP =u0ԫ07.5.2 =u0ԫ Journal of Applied Physics =u0ԫ Article$M_@_| 1986 Sep 1 $M_@_|60$M_@_|5$M_@_| 1640-1647 $M_@_|%A\\As01mesant\Procite Databases\WCS\Articles\Fischer R 1986 09.pdfA[=u0ԫ+134$M_@_|919001.5.2 Metastable Centers: DX`=t? Journal of Applied Physics`=t?1987$M_@_N6201.5.2 Metastable Centers: DX`=t? Journal of Applied Physics`=t?1987$M_@_N62English IBM Corp, Thomas J Watson RES CTR, POB 218, Yorktown Hts, NY, 10598 L1844 Copyright 2003 SciSearch Plus $M_@_N$M_@_N$M_@_N$M_@_N$M_@_N^!QN~<0 4636822 =[vUS=[v 1/13/1987 =[v]DE3570556C0 EP0175864A2 EP0175864A3 EP0175864B1 JP03028059B4 JP61055973A2 US4636822 US4855246]=[vOUS3997908 US4204894 US4304042 US4366613 US4389768 US4396437 US4425573 US4553316O=[v"Design and Performance of GaAs Normally-Off MESFET Integrated Circuits IEEE Transactions on Electron Devices, vol. ED-27, No. 6, Jun. 1981, by Katsuhiko Suyama, Hirotsugu Kusakawa and Masumi Fukuta, pp. 1092-1097.; ""A Half Micron MOSFET Using Double Implanted LDD"", IEDM 82 pp. 718-721, by S. Ogura, C. F. Codella, N. Rovedo, J. F. Shepard and J. Riseman.; ""An Optimized 0.5 Micron LDD Transistor"" IEDM 83, pp. 237-239, by S. Rathnam, H. Bahramian, D. Laurent and Yu-Pin Han."=[v"US4819043 US4847212 US4859618 US4868137 US4898835 US4933295 US4963501 US5043776 US5087950 US5134447 US5143857 US5324969 US5376812 US5405792 US5432103 US5512499 US5536959 US5633177 US5780902 US6040214 US6134424 US6258679 US6340826 USH986=[v%;\\As01mesant\Procite Databases\WCS\Patents\US04636822__.pdf;=[v'"H01L 29/80, H01L 29/48"=[v+24 =[v63440Sci Lab,1101 W Springfield ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Purdue Univ,Dept Mat Sci/W Lafayette//in/47907 ; Perkin Elmer/Eden Prairie//Mn/553Sci Lab,1101 W Springfield ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Purdue Univ,Dept Mat Sci/W Lafayette//in/47907 ; Perkin Elmer/Eden Prairie//Mn/553-Doped AlxGa1-xAs;`=t?;`=t?N~ D0s>@)Mooney, P.M.//Caswell, N.S.//Wright, S.L.)`=t?;The Capture Barrier of the DX-Center in Si-Doped AlxGa1-xAs;`=t?01.5.2 Metastable Centers: DX`=t? Journal of Applied Physics`=t?1987$M_@_N62$M_@_N12$M_@_N 4786-4797 $M_@_N%A\\As01mesant\Procite Databases\WCS\Articles\Mooney PM 1987 12.pdfA$M_@_N' 0021-8979 $M_@_N)oEnglish IBM Corp, Thomas J Watson RES CTR, POB 218, Yorktown Hts, NY, 10598 L1844 Copyright 2003 SciSearch Plus $M_@_N$M_@_N$M_@_N$M_@_N$M_@_N$M_@_N$M_@_N$M_@_N$M_@_N $M_@_N/|̬6Femtosecond Carrier Thermalization in Dense Fermi Seas68e=H)p|̬03.2.18e=H)p|̬ Physical Review Letters8e=H)p|̬ Articled$M_\@_Db 1988 Sep 12 d$M_\@_Db61d$M_\@_Db11d$M_\@_Db 1290-1293 d$M_\@_Db%:\\Aeron\Procite Databases\WCS\Articles\Knox WH 1988 09.pdf:+158d$M_\@_Db9510Articles\Knox WH 1988 09.pdf:+158d$M_\@_Db9510SN~D0 i̬GMetal-Semiconductor Field-Effect Transistor Based on Single-Crystal GaNGH/=ui̬09.1.3H/=ui̬ Applied Physics LettersH/=ui̬ Article$M_@_ܾi Apr 12, 1993 $M_@_ܾi62$M_@_ܾi15$M_@_ܾi 1786-1787 $M_@_ܾi%?\\As01mesant\Procite Databases\WCS\Articles\Khan MA 1993 04.pdf?^=ui̬*nIn this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 mum (channel opening, i.e., source to drain separation of 10 mum), a transconductance of 23 mS/mm was obtained at -1 V gate bias. Complete pinch-off was observed for a gate potential of -12 V.n$M_@_ܾi+151$M_@_ܾi,>Chemical Vapor-Deposition/ Stimulated-Emission/ Room- Sapphire>$M_@_ܾi46807733 ; at&T Bell Labs/Murray Hill//Nj/07974GH=pZ̬ZFemtosecond Dynamics of Resonantly Excited Excitons in Room-Temperature GaAs Quantum WellsZH=7733 ; at&T Bell Labs/Murray Hill//Nj/07974GH=pZ̬ZFemtosecond Dynamics of Resonantly Excited Excitons in Room-Temperature GaAs Quantum WellsZH={N~ $ ;@0%mKnox, W. H. //Fork, R. L. //Downer, M. C. //Miller, D. A. B. //Chemla, D. S. //Gossard, A. C. //Wiegmann, W. mH=pZ̬GAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974GH=pZ̬ZFemtosecond Dynamics of Resonantly Excited Excitons in Room-Temperature GaAs Quantum WellsZH=pZ̬03.2.1H=pZ̬ Physical Review LettersH=pZ̬ Articlec$M_ln@_nc 1985 Mar 25 =pZ̬54c$M_ln@_nc12c$M_ln@_nc 1306-1309 c$M_ln@_nc%?\\As01mesant\Procite Databases\WCS\Articles\Knox WH 1985 03.pdf?=pZ̬+185c$M_ln@_nc9520sohIn Situ, Atomic Force Microscope Studies of the Evolution of InAs Three-Dimensional Islands on GaAs(001)h07.4.2 Applied Physics Letters Article Jun 3, 1996 6823 3299cs Letters Article Jun 3, 1996 6823 3299-3301 %?\\Aeron\Procite Databases\WCS\Articles\Kobayashi NP 1996 06.pdf?*The size evolution of molecular beam epitaxy-grown strained InAs three-dimensional (3D) islands on GaAs(001) is examined using in situ ultrahigh vacuum atomic force microscopy. Remarkably, just after the initiation of well-formed 3D islands at similar to 1.57 ML InAs deposition, the lateral size dispersion and average value are found to first increase drastically with the smallest amount (similar to 0.05 ML) of additional InAs deposition and then decrease and saturate, indicating the onset of a natural tendency for^N~2 , ;@v%AKobayashi, N. P. //Ramachandran, T. R. //Chen, P. //Madhukar, A. AoUniv So Calif,Dept Mat Sci,Photon Mat & Devices Lab,Los ; Univ So Calif,Dept Phys,Photon Mat & Devices Lab,LosohIn Situ, Atomic Force Microscope Studies of the Evolution of InAs Three-Dimensional Islands on GaAs(001)h07.4.2 Applied Physics Letters Article Jun 3, 1996 6823 3299-3301 %D\\As01mesant\Procite Databases\WCS\Articles\Kobayashi NP 1996 06.pdfD*The size evolution of molecular beam epitaxy-grown strained InAs three-dimensional (3D) islands on GaAs(001) is examined using in situ ultrahigh vacuum atomic force microscopy. Remarkably, just after the initiation of well-formed 3D islands at similar to 1.57 ML InAs deposition, the lateral size dispersion and average value are found to first increase drastically with the smallest amount (similar to 0.05 ML) of additional InAs deposition and then decrease and saturate, indicating the onset of a natural tendency for size equalization, including through loss of material from the initially formed largest islands. These observations are found to be consistent with the previously suggested island-separation dependent influence of the evolving island-induced substrate strain fields on the adatom migration and incorporation/detachment kinetics that control the evolution of the islands. (C) 1996 American Insti4 ; Wright Lab,Solid State Electr Directorate/Wright Pattersonk=tk̬fHigh-Responsivity Photoconductive Ultraviolet Sensors Based on Insulating Single-Crystal GaN Epilayersf=tk̬11.3.5=tk̬ Applied Physics Letters=tk̬ Article$M_&(@5 nm and dropped by three orders of magnitude with^N~$ 4 /tute of Physics.+111,Growth9590j.=@R\Khan, M. A. //Kuznia, J. N. //Olson, D. T. //Vanhove, J. M. //Blasingame, M. //Reitz, L. F. \=tk̬kApa Opt Inc,2950 Ne 84th Lane/Blaine//Mn/55434 ; Wright Lab,Solid State Electr Directorate/Wright Pattersonk=tk̬fHigh-Responsivity Photoconductive Ultraviolet Sensors Based on Insulating Single-Crystal GaN Epilayersf=tk̬11.3.5=tk̬ Applied Physics Letters=tk̬ Article$M_&(@_(k Jun 8, 1992 $M_&(@_(k60$M_&(@_(k23$M_&(@_(k 2917-2919 $M_&(@_(k%?\\As01mesant\Procite Databases\WCS\Articles\Khan MA 1992 06.pdf?7=tk̬*'We report on the fabrication and characterization of photoconductive ultraviolet detectors based on insulating single-crystal GaN. The active layer (GaN) was deposited over basal-plane sapphire substrates using a unique switched atomic-layer-epitaxy process. The sensors were measuߊ(=1?$Kruehler, Wolfgang//Grabmaier, Josef$=put2\DMethod for the manufacture of gallium arsenide thin film solar cellsD=put2\06.5X=put2\Siemens Aktiengesellschaft=put2\512710=put2\ US4657603 =put2\DE=put2\ 4/14/1987 =put2\.EP0180751A2 EP0180751A3 JP61095578A2 US4657603.=put\63460%UE, L0detectors based on insulating single-crystal GaN. The active layer (GaN) was deposited over basal-plane sapphire substrates using a unique switched atomic-layer-epitaxy process. The sensors were measured to have a responsivity of 2000 A/W at a wavelength of 365 nm under a 5-V bias. The responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped by three orders of magnitude within 10 nm of the band edge (by 375 nm). We estimate our sensors to have a gain of 6X10(3) (for wavelength 365 nm) and a bandwidth in excess of 2 kHz. The photosignal exhibited a linear behavior over five orders of incident optical power, thereby implying a very large dynamic range for these GaN-based ultraviolet sensors.'$M_&(@_(k+138$M_&(@ _(k4690ߊ(=@$Kruehler, Wolfgang//Grabmaier, Josef$=put2\DMethod for the manufacture of gallium arsenide thin film solar cellsD=put2\06.5X=put2\Siemens Aktiengesellschaft=put2\512710=put2\ US4657603 =put2\DE=put2\ 4/14/1987 =put2\.EP0180751A2 EP0180751A3 JP61095578A2 US4657603.=put2\US4053350 US4370510 US4392297=put2\"S. S. Chu et al., J. Appl. Phys., vol. 48, pp. 4848-4849, (1977).; B-Y. Tsaur et al., Appl. Phys. Lett., vol. 41, ;1?%oLeo, K. //Wegener, M. //Shah, J. //Chemla, D. S. //Gobel, E. O. //Damen, T. C. //Schmittrink, S. //Schafer, W. o8%=PnQ[At&T Bell Labs/Holmdel//Njz| <lN~iL0*^$M_|gli@_dix|^ 1990 Sep 10 ^$M_|gli@_dix|^65^$M_|gli@_dix|^11^$M_|gli@_dix|^ 1340-1343 ^$M_|gli@_dix|^%=\\As01mesant\Procite Databases\WCS\Articles\Leo K 1990 09.pdf=^$M_|gli@_dix|^+167^$M_|gli@_dix|^9660;@%|Livescu, G. //Miller, D. A. B. //Chemla, D. S. //Ramaswamy, M. //Chang, T. Y. //Sauer, N. //Gossard, A. C. //English, J. H. |6= s :At&T Bell Labs,Photon Switching Res Dept/Holmdel//Nj/07733:6= s ZFree Carrier and Many-Body Effects in Absorption-Spectra of Modulation-Doped Quantum WellsZ6= s 02.4.26= s  #IEEE Journal of Quantum Electronics#6= s  Article=$M_FH@_H =1988 Aug=$M_FH@_H =24=$M_FH@_H =8=$M_FH@_H = 1677-1689 =$M_FH@_H =%A\\As01mesant\Procite Databases\WCS\Articles\Livescu G 1988 08.pdfA=$M_FH@_H =+161=$M_FH@_H =9690=0t4b01.4.4 ExcitonsP=0t4b Journal of Applied PhysicsP=0t4bAMER INST PHYSICS$M_dT@_L=0t4b01.4.4 ExcitonsP=0t4b Journal of Applied PhysicsP=0t4bAMER INST PHYSICS$M_dT@_L0-1838 $M_dT@_LVd%:Plus5$M_dT@_LVd+101$M_dT@_LVd64760'WHx*T0;@ &/Madhukar, A. //Xie, Q. //Chen, P. //Konkar, A. /X/=)s|B̬Univ So Calif,Photon Mat & Devices Lab/Los Angeles//Ca/90089 ; Univ So Calif,Dept Mat Sci/Los Angeles//Ca/90089 ; Univ So Calif,Dept Phys/Los Angeles//Ca/90089X/=)s|B̬TNature of Strained InAs 3-Dimensional Island Formation and Distribution on GaAs(100)TX/=)s|B̬07.4.2X/=)s|B̬ Applied Physics LettersX/=)s|B̬ Article$M_td@_\At May 16, 1994 $M_td@_\At64$M_td@_\At20$M_td@_\At 2727-2729 $M_td@_\At%B\\As01mesant\Procite Databases\WCS\Articles\Madhukar A 1994 05.pdfB=)s|B̬* The substrate temperature and arsenic pressure dependence of the density of InAs three-dimensional (3D) islands formed on GaAs(100) is found to exhibit a behavior that cannot be reconciled within the currently popular view of MBE growth. Rather, either an arsenic coverage induced strain if San Diego,Dept Elect Engn & Comp Sci/La ; Cornell Univ,Dept Mat Sci & Engn/Ithaca//Ny/14853 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598=Xv|7ԫ@Nonalloyed Ohmic Contacts to N-GaAs by Solid-Phase Epitaxy of Ge@=Xv|7ԫ08.3.2=Xv|7ԫ Journal of Applied Physics=Xv|7ԫ Articles$M_|~@_|~Js 1987 AUG 1 s$M_|~@_|~Js62s$M_|~@_|~Js3s$M_|~@_|s1-xPx near the Direct-Indire$M_|~@_|~Js3s$M_|~@_|{^N~T0\0~Js942-947s$M_|~@_|~Js%C\\As01mesant\Procite Databases\WCS\Articles\Marshall ED 1987 08.pdfCxl=Xv|7ԫ+148s$M_|~@_|~Js9780w>@8Craford, M.G.//Stillman, G.E.//Rossi, J.A.//Holonyak, N.8=سtj<^Effect of Te and S Donor Levels on Properties of GaAs1-xPx near the Direct-Indirect Transition^=سtj<01.5.2 Metastable Centers: DX=سtj< Physical Review=سtj<AMERICAN PHYSICAL SOC$M_ԹĻ@_p԰1968$M_ԹĻ@_p԰168$M_ԹĻ@_p԰3$M_ԹĻ@_p԰867-882HV=سtj<HV=سtj<%B\\As01mesant\Procite Databases\WCS\Articles\Craford MG 1968 04.pdfB$M_ԹĻ@_p԰' 0031-899X $M_ԹĻ@_p԰)5English A1968A982800027 Copyright 2003 SciSearch Plus5$M_ԹĻ@_p԰+139$M_ԹĻ@_p԰64770ԫ Applied Physics LettersZ=pr@ԫ Article$M_@_8I̿ 1987 Apr 20 $M_@_8I̿50$M_ԫ Applied Physics LettersZ=pr@ԫ Article$M_@_8I̿ 1987 Apr 20 $M_@_8I̿50$M_ԫ Applied Physics LettersZ=pr@ԫ Article$M_@_8I̿ 1987 Apr 20 $M_@_8I̿50$M_r@pm\0\ j/07974$=hrGԫ\Strong 8.2 Mu-M Infrared Intersubband Absorption in Doped GaAs/AlAs Quantum-Well Wave-Guides\=hrGԫ04.3.3=hrGԫ Applied Physics Letters=hrGԫ Article$M_dT@_Lbd 1987 Feb 2 $M_dT@_Lbd50$M_dT@_Lbd5$M_dT@_Lbd273-275$M_dT@_Lbd%A\\As01mesant\Procite Databases\WCS\Articles\Levine BF 1987 02.pdf,hH9XXF=hrGԫ+228$M_dT@_Lbd4760;@>&.Marzin, J. Y. //Charasse, M. N. //Sermage, B. ./=p|̬,Ctr Natl Etud Telecommun,Lab Bagneux/F-92220,/=p|̬kOptical Investigation of a New Type of Valence-Band Configuration in InxGa1-xAs-GaAs Strained Superlatticesk/=p|̬04.2.2/=p|̬/=p|̬ "Physical Review B-Condensed Matter"/=p|̬ Article$M_܍@_ԍ 1985 Jun 15 $M_܍@_;1?R&VMasselink, W. T. //Pearah, P. J. //Klem, J. //Peng, C. K. //Morkoc, H. //Chang, Y. C. V(=0rjlUniv Illinois,Coordinated Sci Lab,1101 W Springfield ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Dept Elect & Comp Engn/Urbana//Il/61801(=0rjlSAbsorption-#S~HT d ԍ31$M_܍@_ԍ12$M_܍@_ԍ 8298-8301 $M_܍@_ԍ%A\\As01mesant\Procite Databases\WCS\Articles\uMarzin JY 1985 06.pdfA$M_܍@_ԍ+191$M_܍@_ԍ9790;@R&VMasselink, W. T. //Pearah, P. J. //Klem, J. //Peng, C. K. //Morkoc, H. //Chang, Y. C. V(=0rjlUniv Illinois,Coordinated Sci Lab,1101 W Springfield ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Dept Elect & Comp Engn/Urbana//Il/61801(=0rjlSAbsorption-Coefficients and Exciton Oscillator-Strengths AlGaAs-GaAs SuperlatticesS(=0rjl04.3.2=0rjl "Physical Review B-Condensed Matter"(=0rjl Article$M_@_ 1985 Dec 15 $M_@_32$M_@_12$M_@_ 8027-8034 $M_@_%D\\As01mesant\Procite Databases\WCS\Articles\Masselink WT 1985 12.pdfD$M_@_+1332$M_@_9810=oqgRelation Between Electroabsorption in Bulk in Quantum-Wells: the Quantum-Confined Franz-Keldysh Effect`pN=oqpN=o=oqgRelation Between Electroabsorption in Bulk in Quantum-Wells: the Quantum-Confined Franz-Keldysh Effect`pN=oqpN=o\Articles\Miller DAB 1986 05.pdf=$M_ @_+124$M_ @_9830Fvk+[\ l ;@f&3Miller, D. A. B. //Chemla, D. S. //Schmittrink, S. 3pN=oqGAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974GpN=oqgRelation Between Electroabsorption in Bulk in Quantum-Wells: the Quantum-Confined Franz-Keldysh Effect`pN=oqpN=oq03.3.2pN=oqpN=oq "Physical Review B-Condensed Matter"pN=oq Article$M_ @_ 1986 MAY 15 $M_ @_33$M_ @_10$M_ @_ 6976-6982 $M_ @_%B\\As01mesant\Procite Databases\WCS\Articles\Miller DAB 1986 05.pdfB$M_ @_+124$M_ @_9830=xv Article$M_$@_ $1985 December 15$M_$@_ $32$M_$@_ $12$M=xv Article$M_$@_ $1985 December 15$M_$@_ $32$M_$@_ $12$M=xv Article$M_$@_ $1985 December 15$M_$@_ $32$M_$@_ $12$M=xv Article$M_$@_ $1985 December 15$M_$@_ $32$M_$@_ $12$M:=2o4:=2oN~N~d t ;@z&QMiller, R. C. //Gossard, A. C. //Sanders, G. D. //Chang, Y. C. //Schulman, J. N. Qq=xvAt&T Bell Labs/Murray Hill//Nj/07974 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Hughes Res Labs/Malibu//Ca/90265q=xvqNew Evidence of Extensive Valence-Band Mixing in GaAs  Quantum Wells Through Excitation Photoluminescence Studiesqq=xv03.1.5N=xv "Physical Review B-Condensed Matter"q=xv Article$M_$@_ $1985 December 15$M_$@_ $32$M_$@_ $12$M_$@_ $ 8452-8454 $M_$@_ $%A\\As01mesant\Procite Databases\WCS\Articles\Miller RC 1985 12.pdfA$M_$@_ $+110($M_$@_ $9850j.=1?pLKamath, K. //Bhattacharya, P. //Sosnowski, T. //Norris, T. //Phillips, J.C. I:=2o4:=2o4:=2o10.2.3:=2o4 Electronics Letters:=2o4 Article$M_@_ Jul 18, 1996 $M_@_32$M_@_15$M_@_ 1374-1375 $M_@_%<\\Aeron\Procite Databases\WCS\Articles/Kamath K 1996 007.pdf<$M_@_*We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum d4720g^NN~l d0j.=@pLKamath, K. //Bhattacharya, P. //Sosnowski, T. //Norris, T. //Phillips, J.C. I:=2o4:=2o4:=2o4;Univ Michigan,Dept Elect Engn & Comp Sci,Solid State Electr;:=2o4QRoom-Temperature Operation of In0.4ga0.6as/GaAs Self-Organised Quantum Dot LasersQ:=2o410.2.3:=2o4 Electronics Letters:=2o4 Article$M_@_ Jul 18, 1996 $M_@_32$M_@_15$M_@_ 1374-1375 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles/Kamath K 1996 007.pdfA$M_@_*We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 mu m and J(th) = 650 A/cm(2) for a 90 mu m x 1 mm broad-area laser. Steady-state and time-resolved photoluminescence mej.=[?)Luo, L. F. //Beresford, R. //Wang, W. I. )@-=`v,ԫhColumbia Univ,Dept Elect Engn/New York//Ny/10027 ; Columbia Univ,Microelectr Sci Labs/New York//Ny/10027h@-=`v,ԫ?Interband Tunneling in Polytype Gasb/Alsb/Inas Heterostructures?@-=`v,ԫ02.3.4@-=`v,ԫ Applied Physics Letters@-=`v,ԫ Article $M_)+@_+*  1989 Nov 6 $M_)+@_+* 55 $M_)+P=wo,EP=wo,EbDirect Measurement of Resonant and Nonr^N~ F t0/07733Px/=`$wMԫUA Model for the Surface Chemical Kinetics of GaAs Deposition by Chemical-Beam Epitaxy =`$wMԫ=`$wMԫ4=`$wMԫ06.4.4x/=`$wMԫ Journal of Applied Physicsx/=`$wMԫ Article]$M_fh@_h)] 1988 Jul 15 ]$M_fh@_h)]64]$M_fh@_h)]2]$M_fh@_h)]877-887]$M_fh@_h)]%C\\As01mesant\Procite Databases\WCS\Articles\Robertson A 1988 07.pdf,XhH9XXF=`$wMԫ+128]$M_fh@_h)]10160;@'Sanders, G. D. //Chang, Y. C. =p xUUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801U=p x@_> +129$M_<$>@_> 10220w>@Kish F.A.//Steranka, F.M.//Defevere, D.C.//Vanderwater, DA//Park, K.G.//Kuo, C.P.//Osentowski, TD//Peanasky, M.J.//Yu, J.G.//Fletcher, R.M.//Steigerwald D.A.,//Crawford, M.G.//Robbins, V.M.@=8lqO@=8lqO@=8lqO@=8lqO2@=8lqOsVery High Efficiency Semiconductor Wafer Bound Transparent Substrate (ALXGA1-X)0.5IN0.5P/GaP Light Emitting Diodess@=8lqO11.1@=8lqO Applied Physics Letters@=8lqO1994$M_D(4*@_,*CD64$M_D(4*@_,*CD21$M_D(4*@_,*CD 2839-2841 $M_D(4*@_,*CD%?\\As01mesant\Procite Databases\WCS\Articles\Kish FA 1994 05.pdf?$M_D(4*@_,*CD' 0003-6951 $M_D(4*@_,*CD)English Hewlett Packard Corp, Div Optoelectr, 370 W Trimble Rd, San Jose CA, 95131 Hewlett Packard Corp, Palo Alto, CA, 94303 NN011 Copyright 2003 SciSearch Plus$M_ߊ(=]l=? Yokoyama, Naoki=Xu|4High-speed semiconductor device=Xu|409.2.2=Xu|4Fujitsu Limited=Xu|4211480=Xu|4 US4712121 =Xu|4JP=Xu|4 12/8/1987 =Xu|4SDE3585864C0 EP0177374A2 EP0177374A3 EP0177374B1 JP04021336B4 JP61058268A2 US4712121S=Xu|4 US4616241 616241 Iy 9i ߊ(=@ Yokoyama, Naoki=Xu|4High-speed semiconductor device=Xu|409.2.2=Xu|4Fujitsu Limited=Xu|4211480=Xu|4 US4712121 =Xu|4JP=Xu|4 12/8/1987 =Xu|4SDE3585864C0 EP0177374A2 EP0177374A3 EP0177374B1 JP04021336B4 JP61058268A2 US4712121S=Xu|4 US4616241 =Xu|4"gUS4788662 US4825264 US4825269 US4831340 US4847666 US4849799 US4849934 US4901122 US4903104 US4907196 US4929984 US4951107 US4956681 US4958208 US4967252 US4996166 US4999697 US5024958 US5027179 US5031005 US5031013 US5031015 US5091756 US5121181 US5138408 US5179037 US5214297 US5242843 US5448087 US5489785 US5543749 US5731752 US6201258 US6265934 US6281746 US6297716g=Xu|4%;\\As01mesant\Procite Databases\WCS\Patents\US04712121__.pdf;=Xu|4'%"H01L 27/12, H01L 29/161, H01L 29/72"%J=Xu|4+36=Xu|463500A=(pp x<kValence-Band Physics and the Optical-Properties of GaN Epilayers Grown Onto Sapphire With Wurtzite SymmetrykA=(pp x<01.3.3 Electron BandgA=(pp x<kValence-Band Physics and the Optical-Properties of GaN Epilayers Grown Onto Sapphire With Wurtzite SymmetrykA=(pp x<01.3.3 Electron Bandg other hand. This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-ba of the previous modelings based on quasicubic descriptions of the valence-ba@N~2 |0p<@ 'Gil, B. //Briot, O. //Aulombard, R. L. 'A=(pp x<TUniv Montpellier 2,Etud Semicond Grp,Case Courrier 074/F-34095 Montpellier 5//FranceTA=(pp x<kValence-Band Physics and the Optical-Properties of GaN Epilayers Grown Onto Sapphire With Wurtzite SymmetrykA=(pp x<01.3.3 Electron BandgapsA=(pp x< "Physical Review B-Condensed Matter"A=(pp x< ArticleF$M_FF@_F F Dec 15, 1995 F$M_FF@_F F 52F$M_FF@_F F24F$M_FF@_F F 17028-17031 F$M_FF@_F F%=\\As01mesant\Procite Databases\WCS\Articles/Gil B 1995 12.pdf=F$M_FF@_F F*We report on a quantitative analysis of the band gap of hexagonal GaN epilayers in terms of the joint contributions;of the actual wurtzite symmetry on the one hand and of residual strain fields on the other hand. This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-band physics and gives Delta(1)=10+/-0.1 meV, Delta(2)=6.2+/-0.1 meV, and Delta(3)=5.5+/-0.1 meV. Last we propose a set of deformation potentials for the hexagonal GaN semiconductor.F$ԫQNew Negative Differential Resistance Device Based on Resonant Interband TunnelingQP=8vԫ09.2.4P=8vԫ Applied Physics LettersP=8vԫ Article$M_@_z 1989 Sep 11 $M_@_z55$M_@_z11215H=Ho/7Towards the Identification of the Dominant Donor in G^N~|0 j.=@Perlin, P. //Suski, T. //Teisseyre, H. //Leszczynski, M. //Grzegory, I. //Jun, J. //Porowski, S. //Boguslawski, P. //Bernholc, J. //Chervin, J. C. //Polian, A. //Moustakas, T. D. H=Ho/Polish Acad Sci,High Pressure Res Ctr,Unipress/Pl-01142 ; Polish Acad Sci,Inst Phys/Pl-02668 Warsaw//Poland ; N Carolina State Univ,Dept Phys/Raleigh//Nc/27695 ; Univ Paris 06/F-75252 Paris 05//France ; Boston Univ,Dept Elect Comp & Syst Engn/Boston//Ma/02215H=Ho/7Towards the Identification of the Dominant Donor in GaN7H=Ho/07.1.6H=Ho/ Physical Review LettersH=Ho/ Article@_@_N7 1995 Jul 10@_@_N7@_@_N7@_@_N775@_@_N72@_@_N7296-299@_@_N7%@\\As01mesant\Procite Databases\WCS\Articles\Perlin P 1995 07.pdf@@_@_N7+136r@_@_N7, Gallium Nitride/ Pressure/ Films @_@_N74890<j=?6Fischer, Albert G.p=nk^Pocketable direct current electroluminescent display device addressed by MOS or MNOS circuitry^p=229265!p=nk%6\\Aeron\Procite Databases\WCS\Patents\US03885196__.pdf6p=nk' H05B 41/2 p=nk+29p=nk310k' H05B 41/2 p=nk+29p=nk31098hN~$ 0<@6Fischer, Albert G.p=nk^Pocketable direct current electroluminescent display device addressed by MOS or MNOS circuitry^p=nk12.4.2p=nk597185p=nk US3885196 p=nkUSp=nk 5/20/1975 p=nkUS3807037 US3885196p=nk;US3246162 US3388292 US3512041 US3603931 US3648131 US3781570;p=nk"!US4006383 US4024404 US4042854 US4110662 US4112333 US4114070 US4237456 US4368467 US4386351 US4686426 US4725761 US4823121 US4866348 US4893060 US4914353 US4935671 US4960719 US5006838 US5034340 US5550066 US5608264 US5618752 US5646067 US5668409 US5682062 US5760542 US5814889 US6159620 US6229265!p=nk%;\\As01mesant\Procite Databases\WCS\Patents\US03885196__.pdf;p=nk' H05B 41/2 p=nk+29p=nk310;1?")Tsang, W. T. //Cho, A. Y. pV=nw0'Bell Tel Labs Inc/Murray Hill//Nj/07974'pV=nw0Growth of GaAs-Ga1-xAlxAs OvepV=nw0 Applied Physics LetterspV=nw0 ArticleQ$M_$Z\@_ \u$Q1977Q$M_$Z\@_ \u$Q30Q$M_$Z\@_ \u$Q6Q$M_$Z\@_ \u$Q293-296Q$M_$Z\@_ \u$Q%8\\Aeron\Procite Databases\WCS\Articles/Tsang WT 1976.pdf8Q$M_$Z\@_ \u$Q8+133Q$M_$Z\@_ \u$Q10530^N~0 ;@)ZWeiner, J. S. //Chemla, D. S. //Miller, D. A. B. //Wood, T. H. //Sivco, D.L. //Cho, A. Y. J=Ryv9=Ryv9=Ryv9pAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Crawford Hill//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974p=Ryv9JRoom-Temperature Excitons in 1.6-Mu-M Band-Gap GalnAs/AllnAs Quantum WellsJ=Ryv903.1.3=Ryv9 Applied Physics Letters=Ryv9 Article$M_,@_s, 1985 Apr 1 $M_,@_s,46$M_,@_s,7$M_,@_s,619-621$M_,@_s,%A\\As01mesant\Procite Databases\WCS\Articles\Weiner JS 1985 04.pdf,$M_,@_s,$M_,@_s,:+125$M_,@_s,10670=myD"!US5610416 US5670383 US4083062 US4110778 US4127932 US4129878 US4142200 US4241358 US4326211 US4383266 US4441114 US4463368 US4586074 US4797371 US4891815 US4904608 US4972242 US499969=myD"!US5610416 US5670383 US4083062 US4110778 US4127932 US4129878 US4142200 US4241358 US4326211 US4383266 US4441114 US4463368 US4586074 US4797371 US4891815 US4904608 US4972242 US499969=myD"!US5610416 US5670383 US4083062 US4110778 US4127932 US4129878 US4142200 US4241358 US4326211 US4383266 US4441114 US4463368 US4586074 US4797371 US4891815 US4904608 US4972242 US499969=myD"!US5610416 US5670383 US4083062 US4110778 US4127932 US4129878 US4142200 US4241358 US4326211 US4383266 US4441114 US4463368 US4586074 US4797371 US4891815 US4904608 US4972242 US4999690`N~" <@@=Ohuchi, Hirobumi//Kamei, Tatsuya//Tsukuda, Kiyoshi//Ogawa, T.==myDAvalanche photodiode=myD11.3.2=myD252865=myD US3886579 =myDJA=myD 5/27/1975 =myDGDE2337817A1 DE2337817B2 DE2337817C3 JP49051886A2 JP52012076B4 US3886579G=myDUS3483441 US3534231 US3539883=myD"!US5610416 US5670383 US4083062 US4110778 US4127932 US4129878 US4142200 US4241358 US4326211 US4383266 US4441114 US4463368 US4586074 US4797371 US4891815 US4904608 US4972242 US4999696 US5057892 US5365087 US5438217 US5444274 US5500376 US5583352 US5596186 US5602413 US5866936 US6043548 US6222209!=myD%;\\As01mesant\Procite Databases\WCS\Patents\US03886579__.pdf;=myD'H01L 29/90; H01L 9/0=myD+29=myD320`JP@O=auTP` 1/12/1988 @O=auTP`_CA1284371A1 DE3584702C0 EP0173269A2 EP0173269A3 EP0173269B1 JP06032332B4 JP61054690A2 US4719636`JP@O=auTP` 1/12/1988 @O=auTP`_CA1284371A1 DE3584702C0 EP0173269A2 EP0173269A3 EP0173269B1 JP06032332B4 JP61054690A2 US4719636`JP@O=auTP` 1/12/1988 @O=auTP`_CA1284371A1 DE3584702C0 EP0173269A2 EP0173269A3 EP0173269B1 JP06032332B4 JP61054690A2 US4719636@O=auTP`l' H01S 3/19 @O=auTP`+32@O=auTP`63510@pN~H,\<-  --- --$,< 4-D-LT.\d .lt.|.$.,. 4.<.D. L. T.\., $d.l.4t.D<LT\ dl |.    . ..... ! !."#.%&4'+' $',(.)<+.,D,L-T.\/.0.1d2l3t4.5|678t)9.:<.== >?? .@B/CC D /EG/HIJKK /LM$/N OO PP,/Q$R4/S,T4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0& 0ߊ(=@Yamaguchi, Masayuki@O=auTP`KWavelength tunable semiconductor laser device provided with control regionsK@O=auTP`10.5.5@O=auTP`Nec Corporation@O=auTP`395735@O=auTP` US4719636 @O=auTP`JP@O=auTP` 1/12/1988 @O=auTP`_CA1284371A1 DE3584702C0 EP0173269A2 EP0173269A3 EP0173269B1 JP06032332B4 JP61054690A2 US4719636_@O=auTP`US4101845 US4558449 US4608697@O=auTP`"Bragg Wavelength-Tunable DBR-DC-PBH LD, (in Japanese), 1984 National Convention (Record) of the Institute of Electronics and Communication Engineers of Japan, Part 4, Paper No. 1022."@O=auTP`"?US4782035 US4829535 US4852108 US4869568 US4878222 US4879761 US4905253 US4908833 US4914666 US4916705 US4920542 US4976513 US4995048 US5007062 US5008893 US5020153 US5023878 US5048049 US5070509 US5084897 US5091916 US5157681 US5177758 US5184247 US5191590 US5319659 US5383216 US5434879 US5541945 US5789274 US5832014 US5889801?@O=auTP`%;\\As01mesant\Procite Databases\WCS\Patents\US04719636__.pdf;@O=auTPq`' H01S 3/19 @O=auTP`+32@O=auTP`63510c States in Semiconductor Heterostructures3 =tfbX02.3.1 =tfbX #IEEE Journal of Quantum Electronics# =tfc States in Semiconductor Heterostructures3 =tfbX02.3.1 =tfbX #IEEE Journal of Quantum Electronics# =tf7N~J >@*Taniguchi, M.//Ikoma, T. HFHFHFHFHFHFHFTVariation of the Midgap Electron Traps (EL2) in Liquid Encapsulated Czochralski GaAsTHF01.5.3 Metastable Centers: EL2HF Journal of Applied PhysicsHF1983HF54HF11HF 6448-6451 HF%C\\As01mesant\Procite Databases\WCS\Articles\TANIGUCHI M 1983 11.pdfCHF' 0021-8979 HF)bENGLISH UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN, RQ794 Copyright 2003 SciSearch PlusbHF+101HF64810$M_@_|Hb4$M_@_|Hb223-225$M_@_|Hb%;\\Aeron\Procite Databases\WCS\Articles\Cibert J 1986 07.pdf;$M_@_|Hb4$M_@_|Hb223-225$M_@_|Hb%;\\Aeron\Procite Databases\WCS\Articles\Cibert J 1986 07.pdf;$M_@_|Hb4$M_@_|Hb223-225$M_@_|Hb%;\\Aeron\Procite Databases\WCS\Articles\Cibert J 1986 07.pdf;$M_@_|Hb4$M_@_|Hb223-225$M_@_|Hb%;\\Aeron\Procite Databases\WCS\Articles\Cibert J 1986 07.pdf;HxN~0 ;@*CChu, S. N. G. //Macrander, A. T. //Strege, K. E. //Johnston, W. D. C0s=o$At&T Bell Labs/Murray Hill//Nj/07974$0s=oSMisfit Stress in InGaAs/InP Heteroepitaxial Structures Grown by Vapor-Phase EpitaxyS0s=o07.2.2@w=o@w=o Journal of Applied Physics0s=o Article$M_TD@_<: 1985 Jan 15 $M_TD@_<:57$M_TD@_<:2$M_TD@_<:249-257$M_TD@_<:%?\\As01mesant\Procite Databases\WCS\Articles\Chu SNG 1985 01.pdf,$M_TD@_<:$M_TD@_<:+138$M_TD@_<:10970}opyright 2003 SciSearch PlusbHF+101HF64810)bENGLISH UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN, RQ794 CCS\Articles\TANIGUCHI M 1983 11.pdf>HF' 0021-8979 HF)bENGLISH UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN, RQ794 CCS\Articles\TANIGUCHI M 1983 11.pdf>HF' 0021-8979 HF)bENGLISH UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN, RQ794 CCS\Articles\TANIGUCHI M 1983 11.pdf>HF' 0021-8979 HF)bENGLISH UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN, RQ794 CCS\Articles\TANIGUCHI M 1983 11.pdf>HF' 0021-8979 HF)bENGLISH UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN, RQ794 CJz_N~D ;@+_Cibert, J. //Petroff, P. M. //Werder, D. J. //Pearton, S. J. //Gossard, A. C. //English, J. H. _=u^fԫ$At&T Bell Labs/Murray Hill//Nj/07974$=u^fԫ[Kinetics of Implantation Enhanced Interdiffusion of Ga and Al at GaAs-Gaxal1-Xas Interfaces[=u^fԫ08.1.3=u^fԫ Applied Physics Letters=u^fԫ Article$M_@_|Hb 1986 Jul 28 $M_@_|Hb49$M_@_|Hb4$M_@_|Hb223-225$M_@_|Hb%@\\As01mesant\Procite Databases\WCS\Articles\Cibert J 1986 07.pdf@Z=u^fԫ+123$M_@_|Hb11010al., Preparation -GaAs-GaP HeterojunctionsJ. Electrochem. Soc., Vol. III, No. 6, June 1964, p. 674-682. Shaw et al., Gallium Arsenide Epitaxial Technology1966, symposium on GaAs, Reading, Pa., Paper Nal., Preparation -GaAs-GaP HeterojunctionsJ. Electrochem. Soc., Vol. III, No. 6, June 1964, p. 674-682. Shaw et al., Gallium Arsenide Epitaxial Technology1966, symposium on GaAs, Reading, Pa., Paper Nal., Preparation -GaAs-GaP HeterojunctionsJ. Electrochem. Soc., Vol. III, No. 6, June 1964, p. 674-682. Shaw et al., Gallium Arsenide Epitaxial Technology1966, symposium on GaAs, Reading, Pa., Paper Nal., Preparation -GaAs-GaP HeterojunctionsJ. Electrochem. Soc., Vol. III, No. 6, June 1964, p. 674-682. Shaw et al., Gallium Arsenide Epitaxial Technology1966, symposium on GaAs, Reading, Pa., Paper Nal., Preparation -GaAs-GaP HeterojunctionsJ. Electrochem. Soc., Vol. III, No. 6, June 1964, p. 674-682. Shaw et al., Gallium Arsenide Epitaxial Technology1966, symposium on GaAs, Reading, Pa., Paper N PN~ 0<@JFletcher, James C. Administrator of the National Aeronautics and Space Administration in respect to an invention of//Tyagi, Ramesh C. Debnam, Jr.//William J.//McNear, Maxwell F.//Crouch, Roger K.//Breckenridge, Roger A.I=udC[Vapor phase growth of groups III-V compounds by hydrogen chloride transport of the elements[I=udC06.0I=udC597260I=udC US3888705 I=udCUSI=udC 6/10/1975 I=udC US3888705 I=udCUS3146137 US3218205 US3441000I=udCWeinstein et al., Preparation -GaAs-GaP HeterojunctionsJ. Electrochem. Soc., Vol. III, No. 6, June 1964, p. 674-682. Shaw et al., Gallium Arsenide Epitaxial Technology1966, symposium on GaAs, Reading, Pa., Paper No. 2, p. 10-15. Ing et al., Open Tube Epitaxial Synthesis of GaAs and GaPJ. Electrochem. Soc., Vol. 109, No. 10, October 1962, p. 995-997. Shaw, D. W., Influence of Substrate Temperature-Deposition Rates,J. Electrochem. Soc., Vol. 115, No. 4, April 1968, p. 405-408.I=udC"5US4144116 US4148965 US4239584 US4239819 US4279670 US4504329 US4523051 US4645689 US4699082<[?4Hess, K.//Morkoc, H.//Shichijo, H.//Streetman, B. G.4HHBcUniv Illinois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801cHHBENegative Differential Resistance Through Real-Space Electron-TransferEHHB02.3.4HHBProcite Databases\WCS\Articles\Scal nonlinear mechanism can induce intensity-depen^N~\00HHB Applied Physics LettersHHB ArticleHHBx1979HHBx35HHBx6HHBx469-471HHBx9HHBx%;\\As01mesant\Procite Databases\WCS\Articles/Hess K 1979.pdf;HHBx+226HHBx60620j.=@>Scalora, M. //Dowling, J. P. //Bowden, C. M. //Bloemer, M. J. >9=*r!d7Usa,Missile Command,Amsmi Rd Ws,Ctr Dev & Engn/Redstone79=*r!d\Optical Limiting and Switching of Ultrashort Pulses in Nonlinear Photonic Band-Gap Materials\9=*r!d05.3.49=*r!d9=*r!d Physical Review Letters9=*r!d Article$M_ D@_<dt Sep 5, 1994 $M_ D@_<dt73$M_ D@_<dt10$M_ D@_<dt 1368-1371 $M_ D@_<dt%A\\As01mesant\Procite Databases\WCS\Articles;h1?+Cohen, E. //Sturge, M. D. =&u̬'Bell Tel Labs Inc/Murray Hill//Nj/07974'=&u̬9Excited-States of Excitons Bound to Nitrogen Pairs in GaP9=&u̬01.4.4 Excitons(=&u̬ "Physical Review B-Condensed Matter"=&uipta=tb^07.1.1(=tb^ Physica Scriptatb^ Physica ScriptaB4d$T0 20HF 2204-2207 HF%B\\As01mesant\Procite Databases\WCS\Articles\Kaminska M 1985 11.pdfBHF' 0031-9007 HF)bENGLISH UNIV WARSAW, INST EXPTL PHYS, PL-00681 WARSAW, POLAND, ATX17 Copyright 2003 SciSearch PlusbHF:+150HF64820;@,=Coldren, L. A. //Iga, K. //Miller, B. I. //Rentschler, J. A. ==va#Bell Tel Labs Inc/Holmdel//Nj/07733#=vaBGalnAsp-Inp Stripe-Geometry Laser With a Reactive-Ion-Etched FacetB=va10.1.2=va Applied Physics Letters=va ArticleL@_UW@_WSL1980L@_UW@_WSL37L@_UW@_WSL8L@_UW@_W;1?,+Coltrin, M. E. //Kee, R. J. //Evans, G. H. +x =xop%MSandia Natl Labs/Albuquerque//Nm/87185 ; Sandia Natl Labs/Livermore//Ca/94550Mx =xop%xA Mathematical-Model of the Fluid-Mechanics and Gas-Phase Chemistry in a Rotating-Disk Chemical Vapor-Deposition Reactorxx =xop%06.4.1x =xop% &Journal of the Electrochemical Society&x =xop% Article$M_#t%@_l%1989 MAR$M_#t%@_l%136$M_#t%@_l%3$M_#t%@_l%819-829$M_#t%@_l%%=\\Aeron\Procite Databases\WCS\Articles/Cg0`1  SL681-683L@_UW@_WSL%?\\As01mesant\Procite Databases\WCS\Articles/Coldren LA 1980.pdf?L@_UW@_WSL+109L@_UW@_WSL11270;@,+Coltrin, M. E. //Kee, R. J. //Evans, G. H. +x =xop%MSandia Natl Labs/Albuquerque//Nm/87185 ; Sandia Natl Labs/Livermore//Ca/94550Mx =xop%xA Mathematical-Model of the Fluid-Mechanics and Gas-Phase Chemistry in a Rotating-Disk Chemical Vapor-Deposition Reactorxx =xop%06.4.1x =xop% &Journal of the Electrochemical Society&x =xop% Article$M_#t%@_l%1989 MAR$M_#t%@_l%136$M_#t%@_l%3$M_#t%@_l%819-829$M_#t%@_l%%B\\As01mesant\Procite Databases\WCS\Artic{les/Coltrin ME 1989 03.pdfB=xop%+151$M_#t%@_l%11290@_4Lu%:\\Aeron\Procite Databases\WCS\Articles/Coon DD 1984 09.pdf:u$M_L~<@_4Lu+138u$M_L~<@_4Lu1134051u$M_L~<@_4Lu%:\\Aeron\Procite Databases\WCS\Articles/Coon DD 1984 09.pdf:u$M_L~<@_4Lu+138u$M_L~<@_4Lu1134051u$M_L~<@_4Lu%:\\Aeron\Procite Databases\WCS\Articles/Coon DD 1984 09.pdf:u$M_L~<@_4Lu+138u$M_L~<@_4Lu1134051u$M_L~<@_4Lu%:\\Aeron\Procite Databases\WCS\Articles/Coon DD 1984 09.pdf:u$M_L~<@_4Lu+138u$M_L~<@_4Lu11340Cs<lI 0;@L,#Coon, D. D. //Karunasiri, R. P. G. #L=qt &Univ Pittsburgh,Dept Phys,Appl Technol&L=qt ,New Mode of Ir Detection Using Quantum Wells,L=qt 11.3.3L=qt  Applied Physics LettersL=qt  Articleu$M_L~<@_4Lu1984u$M_L~<@_4Lu45u$M_L~<@_4Lu6u$M_L~<@_4Lu649-651u$M_L~<@_4Lu%?\\As01mesant\Procite Databases\WCS\Articles/Coon DD 1984 09.pdf?u$M_L~<@_4Lu+138u$M_L~<@_4Lu11340j.=@ Vanhouten, H. //Beenakker, C. W. J. //Williamson, J. G. //Broekaart, M. E. I. //Vanloosdrecht, P. H. M.//Vanwees, B. J. //Mooij, J. E. //Foxon, C. T. //Harris, J. J. u=XpԫPhilips Res Labs/5600 Ja Eindhoven//Netherlands ; Delft Univ Technol,Dept Appl Phys/2600 Ga Delft//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandu=XpԫXCoherent Electron Focusing With Quantum Point Contacts in a Two-Dimensional Electron-GasXu=Xpԫ04.4.3u=Xp;1?j,Creighton, J. R. H=q@<&Sandia Natl Labs/Albuquerque//Nm/87185&H=q@<@Chemisorption and Decomposition of Trimethylgallium on GaAs(100)@H=q@<06.4.4H=q@< Surface ScienceH=q@< Articler$M_ 8556-8575 x$M_t@_lfHx%>\\Aeron\Procite Databases\WCS\Articles\Vanhouten H 1989 04.pdfGw7~i$ 0l. 45(1), pp. 1-3 (Jul. 1, 1984).; W. D. Laidig et al., ""Embedded-Mirror Semiconductor Laser"", APL, vol. 45(5), pp. 485-487 (Sep. 1, 1984).; W. D. Laidig et al., ""Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion"", APL, vol. 38(1), pp. 776-778 (May 15, 1981).; W. D. Laidig et al., ""Induced Disorder of AlAs-AlGaAs-GaAs Quantum-Well Heterostructures"", Journal of Electronic Materials, vol. 11(1), pp. 1-20 (1982).; J. P. Leburton et al., ""Index of Refraction of AlAs-GaAs Superlattices"", Journal of Applied Physics, vol. 54(7), pp. 4230-4231 (Jul. 1983)."X;=P]y("US4817102 US4835578 US4843032 US4870652 US4977572 US4980893 US4987468 US5007063 US5027164 US5047366 US5081633 US5107306 US5119150 US5138626 US5164797 US5193098 US5212705 US5219785 US5301202 US5400354 US5574741 US6384429X;=P]y(%;\\As01mesant\Procite Databases\WCS\Patents\US04731789__.pdf;X;=P]y('"H01S 3/19, H01L 27/ c12"X;=P]y(+22X;=P]y(6353051HF5HF 2556-2560 HF%<\\Aeron\Procite Databases\WCS\Arti51HF5HF 2556-2560 HF%<\\Aeron\Procite Databases\WCS\Arti51HF5HF 2556-2560 HF%<\\Aeron\Procite Databases\WCS\Arti51HF5HF 2556-2560 HF%<\\Aeron\Procite Databases\WCS\Arti11400)YN~0 287-307r$M_{}@_}?r%A\\As01mesant\Procite Databases\WCS\Articles/Creighton JR 1990.pdfAr$M_{}@_}?r+137r$M_{}@_}?r11370ߊ(=@*Thornton, R.L. X;=P]y(X;=P]y(X;=P]y(%Clad superlattice semiconductor laser%X;=P]y(10.3.2X;=P]y(Xerox CorporationX;=P]y(635240X;=P]y( US4731789 X;=P]y(USX;=P]y( 3/15/1988 X;=P]y(FDE3676867C0 EP0202089A2 EP0202089A3 EP0202089B1 JP61264780A2 US4731789FX;=P]y(US4184171 US4378255X;=P]y("T. Fukuzawa et al., ""GaAlAs Buried Multiquantum Well . . . Disordering"", APL, vo;t=?,2Cullis, A. G. //Augustus, P. D. //Stirland, D. J. 2HFmRoyal Signals & Radar Estab,St Andrews Rd/Great Malvern ; Plessey Co Ltd,Allen Clark Res Ctr/Towchester Nn12mHF@Arsenic Precipitation at Dislocations in GaAs Substrate Material@HF07.1.8HFHF Journal of Applied PhysicsHF ArticleHF1980HF51HF5HF 2556-2560 HF%<\\Aeron\Procite Databases\WCS\Arti 2556-2560 HF%<\\Aeron\Procite Databases\WCS\Artiv6f4 < 04.4.2B=5tjl ScienceB=5tjl Article$M_84:@_,:̦ Jul 24, 1998 $M_84:@_,:̦281$M_84:@_,:̦5376$M_84:@_,:̦540-544$M_84:@_,:̦%E\\As01mesant\Procite Databases\WCS\Articles\Cronenwett SM 1998 07.pdfE$M_84:@_,:̦*A tunable Kondo effect has been realized in small quantum dots. A dot can be switched from a Kondo system to a non-Kondo system as the number of electrons on the dot is changed from odd to even. The Kondo temperature can be tuned by means of a gate voltage as a single-particle energy state nears the Fermi energy. Measurements of the temperature and magnetic field dependence of a Coulomb-blockaded dot show good agreement with predictions of both equilibrium and nonequilibrium Kondo effects.$M_84:@_,:̦+11 Jolla//Ca/92093T=@WwZSubpicosecond Spin Relaxation Dynamics of Excitons and Free-Carriers in GaAs Quantum-WellsZ=@Ww03.2.2=@Ww Physical Review Letters=@Ww Article$M_@_  1991 Dec 9 =@Ww67$M_@_ 24$M_@_  3432-3435 $M_@_ %;\\Aeron\Procite Databases\WCS\Articles\Damen TC 1991 12.pdf'hhH9XXF=@Ww*We have obtained a coherent understanding of spin relaxation processes of electrons, holes, and excitons i^N~p0, R#XXA Nonlinear GaAs-Fet Model for Use in the Design of Output Circuits for Power-AmplifiersX= uR#X09.1.1= uR#X 4IEEE Transactions on Microwave Theory and Techniques4= uR#X ArticleP$M_Y[@_[ZP1985P$M_Y[@_[ZP33= uR#X12= uR#X 1383-1394 U= uR#X%B\\As01mesant\Procite Databases\WCS\Articles/Curtice WR 1985 12.pdfB\P$M_Y[@_[ZP+105P$M_Y[@_[ZP11440;@,;Cronenwett, S. M. //Oosterkamp, T. H. //Kouwenhoven, L. P. ;B=5tjlDelft Univ Technol,Dept Appl Phys,Pob 5046,Nl-2600 Ga ; Delft Univ Technol,Dimes,Nl-2600 Ga Delft,Netherlands ; Stanford Univ,Dept Phys,Stanford,Ca 94305B=5tjl&A Tunable Kondo Effect in Quantum Dots&B=5tjl Jolla//Ca/92093T=@WwZSubpicosecond Spin Relaxation Dynamics of Excitons and Free-Carriers in GaAs Quantum-WellsZ=@Ww03.2.2=@Ww Physical Review Letters=@Ww Article$M_@_  1991 Dec 9 =@Ww67$M_@_ 24$M_@_  3432-3435 $M_@_ %;\\Aeron\Procite Databases\WCS\Articles\Damen TC 1991 12.pdf'hhH9XXF=@Ww*We have obtained a coherent understanding of spin relaxation processes of electrons, holes, and excitons i"R~l, 01$M_84:@_,:̦,/Electron-Transport/ Anderson Model/ Equilibrium/$M_84:@_,:̦11460;@,EDamen, T. C. //Vina, L. //Cunningham, J. E. //Shah, J. //Sham, L. J. E=@WwTAt&T Bell Labs/Holmdel//Nj/07733 ; Univ Calif San Diego,Dept Phys/La Jolla//Ca/92093T=@WwZSubpicosecond Spin Relaxation Dynamics of Excitons and Free-Carriers in GaAs Quantum-WellsZ=@Ww03.2.2=@Ww Physical Review Letters=@Ww Article$M_@_  1991 Dec 9 =@Ww67$M_@_ 24$M_@_  3432-3435 $M_@_ %@\\As01mesant\Procite Databases\WCS\Articles\Damen TC 1991 12.pdf,hhH9XXF=@Ww*We have obtained a coherent understanding of spin relaxation processes of electrons, holes, and excitons in quantum wells by investigating subpicosecond dynamics of luminescence polarization. We show that the spin behavior for electrons and holes in quasi-two-dimensional systems is distinct from that ;1?-BDeveaud, B. //Shah, J. //Damen, T. C. //Lambert, B. //Regreny, A. BH=Pt+ At&T Bell Labs/Holmdel//Nj/07733 H=Pt+ sBloch Transport of Electrons and Holes in Superlattice Minibands: Direct Measurement by Subpicosecond SpectroscopysH=Pt+04.3.1H=Pt+ԫ08.4.3k=nv ԫ Applied Physics Letters ԫ08.4.3k=nv ԫ Applied Physics Letters|$TDt0T f Electrons and Holes in Quantum Wells/ /=nqԫ03.2.3 /=nqԫ Applied Physics Letters /=nqԫ Arti cle$M_|tO@_lO| 1988 MAY 30 $M_|tO@_lO|52$M_|tO@_lO|22$M_|tO@_lO| 1886-1888  $M_|tO@_lO|%A\\As01mesant\Procite Databases\WCS\Articles\Deveaud B 1988 05.pdf,HhH9X XF  /=nqԫ+102 *$M_|tO@_lO|11550 r;@\\Aeron\Procite Databases\WCS\Articles\Phillips JC 1968 02.pdf'"@_!"#"@_#"""@_!"#"@_#"O",Bond Charge Model"@_!"#"@_#""61820j.=1?FJWeiss, S. //Mycek, M. A. //Bigot, J. Y. //Schmittrink, S. //Chemla, D. S. J>=pgUniv Calif Berkeley,Dept Phys/Berkeley//Ca/94720 ; Lawrence BerN~D \ Xs=x8w ԫ+260$M_ܟ@_ԟ 5250 ;@F-Feldmann, J. //Leo, K. //Shah, J. //Miller, D. A. B. //Cunningham, J. E. //Meier, H. P.//Vonplessen, G.//Schulze, A. //Thomas, P. //Schmittrink, S. `_/=St lAt&T Bell Labs/Holmdel//Nj/07733 ; Univ Marburg,Ctr Mat Sci/W-3550 Marburg//Germany ; Univ Marburg,Dept Phys/W-3550 Marburg//Germany`_/=StlKOptical Invest igation of Bloch Oscillations in a Semiconductor Superlattice1`_/=Stl`_/=Stl `_/=Stl04.3.1` _/=Stl "Physical Review B-Condensed Matter"`_/=Stl Article$M_l\ @_T bnl 1992 Sep 15 $M_l\ @_T  bnl46$M_l\ @_T bnl11$M_l\ @_T bnl 7252-7255 $M_l\ @_T bnl%B\\As01mesant\Procite Databases\WCS\Articles\Feld mann J 1992 09.pdf,$M_l\ @_T bnl$M_l\ @_T bnl*+We report the study of optical dephasing of Wannier-Stark ladder excitations in a semiconductor sup erlattice by means of transient degenerate four-wave mixing. We observe pronounced modulations of the signal with a time period varying linearly with the electric field. The time period is found to eqHFHFHF HFHFHFHFHFHFHF HFN~>nT 0 ual the temporal periodicity of Bloch oscillations, in agreement with theory. In addition, we find that the dephasing time decreases with increasing localization of the Wannier-Stark states, which is attributed to carrier escape out of the lowest miniband.$M_l\ @_T bnl$M_l\ @_T bnl$M_l\ @_T bnl+157$M_l\  v @_T bnl,.Electric-Field/ Room-Temperature/ Localization.$M_l\ @_T bnl11590>@>LVonbardeleben, H.J.//Stievenard, D.//Deresmes, D.//Huber, A.//Bourgoin, J.C. HFHFHFHFHFHF HFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHF;Identification of a Defec;1?Z-MFox, A. M. //Miller, D. A. B. //Livescu, G. //Cunningham, J. E. //Jan, W. Y. Mh&=Hu4̬eAt&T Bell Labs,Dept Photon Switching Device ; at&T Bell Labs,Ctr Solid State Technol,Dept Optoelectreh&=Hu4̬UQuantum-Well Carrier Sweep Out - Relation to Electroabsorption and Exciton SaturationUh&=Hu <l,0L ;@Z-MFox, A. M. //Miller, D. A. B. //Livescu, G. //Cunningham, J. E. //Jan, W. Y. Mh&=Hu4̬eAt&T Bell Labs,Dept Photon Switching Device ; at&T Bell Labs,Ctr Solid State Technol,Dept Optoelectreh&=Hu4̬UQuantum-Well Carrier Sweep Out - Relation to Electroabsorption and Exciton SaturationUh&=Hu4̬03.2.3h&=Hu4̬ #IEEE Journal of Quantum Electronics#h&=Hu4̬ Article$M_@_41991 Oct$M_@_427$M_@_410$M_@_4 2281-2295 $M_@_4%>\\As01mesant\Procite Databases\WCS\Articles\Fox AM 1991 10.pdf>4=Hu4̬*LWe have studied the effects of changing the barrier design of GaAs-AlxGa1-xAs quantum wells on the electroabsorption, exciton saturation, and carrier sweep-out times. Five samples have been studied with x values ranging from 0.2 to 0.4, and barrier thicknesses from 35 to 95 angstrom. Within this range, we find3=t#@ Physical Review3=t#@1968 02"@_!"#"@_#"""@_!"#"@_#""166"@_!"#"@_#""832"@_!"#"@_#""%>\\Aeron\Procite Databases\WCS\Articles\Phillips JC 1968 02.pdf'"@_!"#"@_#"""@_!"#"@_#"O",Bond Charge Model"@_!"#"@_#""61820j.=1?FJWeiss, S. //Mycek, M. A. //Bigot, J. Y. //Schmittrink, S. //Chemla, D. S. J>=pgUniv Calif Berkeley,Dept Phys/Berkeley//Ca/94720 ; Lawrence BerN~xL 0eW.<@|Phillips, J.C.3=t#@=Covalent Bond in Crystals. I. Elements of a Structural Theory=3=t#@07.1.73=t#@ Physical Review3=t#@1968 02"@_!"#"@_#"""@_!"#"@_#""166"@_!"#"@_#""832"@_!"#"@_#""%C\\As01mesant\Procite Databases\WCS\Articles\Phillips JC 1968 02.pdf,"@_!"#"@_#"""@_!"#"T@_#"",Bond Charge Model"@_!"#"@_#""61820j.=@FJWeiss, S. //Mycek, M. A. //Bigot, J. Y. //Schmittrink, S. //Chemla, D. S. J>=pgUniv Calif Berkeley,Dept Phys/Berkeley//Ca/94720 ; Lawrence Berkeley Lab,Div Mat Sci/Berkeley//Ca/94720g>=pwCollective Effects in Excitonic Free Induction Decay: Do Semiconductors and Atoms Emit Coherent Light in Different Ways_>=p>=p>=p>=p03.3.4`0=p`0=p Physical Review Letters>=p Article$M_ܮ@_Ԯb\ Nov 2, 1992 $M_ܮߊ(=1?4YHayakawa, Toshiro//Suyama, Takahiro//Takahashi, Kohsei//Kondo, Masafumi//Yamamoto, SaburoY=t?Separate confinement heterostructure semiconductor laser device?=t10.1.1HT=tSharp Kabushiki Kaisha=t508240Jz~0| ߊ(=@4YHayakawa, Toshiro//Suyama, Takahiro//Takahashi, Kohsei//Kondo, Masafumi//Yamamoto, SaburoY=t?Separate confinement heterostructure semiconductor laser device?=t10.1.1HT=tSharp Kabushiki Kaisha=t508240=t US4745612 =tJP=t 5/17/1988 =t_DE3687329C0 DE3687329T2 EP0213705A2 EP0213705A3 EP0213705B1 JP03073154B4 JP62018082A2 US4745612_=tUS4512022 US4644378 US4671830=t"T. Hayakawa et al., Journal of Applied Physics, vol. 54, May 1983, pp. 2209-2213.; S. Yamamoto et al., Appl. Phys. Lett., vol. 41:796-798.; T. Fujii et al., Extended Abstracts of the 16th Conference on Solid State Devices and Materials."=t"US4839899 US4852111 US4860299 US4862470 US4862472 US4868838 US4872174 US4887274 US4894836 US4905058 US4905246 US4907239 US4910744 US4916708FHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHF^N~Tt 0 US4941025 US4989213 US5060028 US5204284 US5289484 US5349596 US5812578=t%;\\As01mesant\Procite Databases\WCS\Patents\US04745612__.pdf;=tx' H01S 3/19 =t+21=t63540>@H6Meyer, B.K.//Hofmann, D.M.//Niklas, J.R.//Spaeth, J.M.HFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHFHF,Arsenic Antisite Defect AsGa and EL2 in GaAsHFHFHFHF01.5.3 Metastable Centers: EL2HF "Physical Review B-Condensed Matter"HF1987HF36HF2;1?-lGobel, E. O. //Leo, K. //Damen, T. C. //Shah, J. //Schmittrink, S. //Schafer, W.//Muller, J. F.//Kohler, K. l =w:At&T Bell Labs/Holmdel//Nj/07>n.^_0 ;@-lGobel, E. O. //Leo, K. //Damen, T. C. //Shah, J. //Schmittrink, S. //Schafer, W.//Muller, J. F.//Kohler, K. l =w:At&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; Rutgers State Univ,Serin Phys Lab/Piscataway//Nj/08855 ; Fraunhofer Inst Appl Solid State Phys/W-7800 =w:*Quantum Beats of Excitons in Quantum-Wells* =w:03.2.2 =w: Physical Review Letters =w: Article$M_@_? 1990 Apr 9(=w:(=w:64$M_@_?15$M_@_? 1801-1804 $M_@_?%@\\As01mesant\Procite Databases\WCS\Articles\Gobel EO 1990 04.pdf,hhH9XXF(=mw:(=w:+131$M_@_?11690: Response to Ultrashort Optical PulsesR r=(v\B Physical Review Letters r=(v\B Articler$M_,{}@_}3,r 19: Response to Ultrashort Optical PulsesR r=(v\B Physical Review Letters r=(v\B Articler$M_,{}@_}3,r 19: Response to Ultrashort Optical PulsesR r=(v\B Physical Review Letters r=(v\B Articler$M_,{}@_}3,r 19&T Bell Labs/Murray Hill//Nj/07974$r PC 1988 10.pdf<r$M_,{}@_}3,r+228r$M_,{}@_}3,r28703cN~` 0j.=@6 qBecker, P. C. //Fragnito, H. L. //Cruz, C. H. B. //Fork, R. L. //Cunningham, J. E. //Henry, J. E. //Shank, C. V. q r=(v\B At&T Bell Labs/Holmdel//Nj/07733 r=(v\B?Femtosecond Photon-Echoes From Band-to-Band Transitions in GaAs? r=(v\BR01.6.2 Ultrafast Carrier-Carrier Scattering: Response to Ultrashort Optical PulsesR r=(v\B Physical Review Letters r=(v\B Articler$M_,{}@_}3,r 1988 OCT 3 r$M_,{}@_}3,r61r$M_,{}@_}3,r14r$M_,{}@_}3,r 1647-1649 r$M_,{}@_}3,r%A\\As01mesant\Procite Databases\WCS\Articles\Becker PC 1988 10.pdfAr$M_,{}@_}3,r+228r$M_,{}@_}3,r2870j.=@P_Willett, R. L. //Paalanen, M. A. //Ruel, R. R. //West, K. W. //Pfeiffer, L. N. //Bishop, D. J. _=r6$At&T Bell Labs/Murray Hill//Nj/07974$=r6zAnomalous Sound Propagation at n = 1/2 in a 2D Electron Gas: Observation of a Spontaneously Broken Translational Symmetry? =r6=r6=r6 Symbol=r6 ymbol=r6ymbol=r6 ymb;1?-1Goldman, V. J. //Tsui, D. C. //Cunningham, J. E. 1/=Xfs@UPrinceton Univ,Dept Elect Engn/Princeton//Nj/08544 ; at&T Bell Labs/Holmdel//Nj/07733=Xfs@UPrinceton Univ,Dept Elect Engn/Princeton//Nj/08544 ; at&T Bell Labs/Holmdel//Nj/07733o\"Suny Buffalo,Dept Phys/Buffalo//Ny/14260 ; Cornel0`N~J0 U/=Xfs@HResonant Tunneling in Magnetic-Fields: Evidence for Space-Charge BuildupH/=Xfs@04.1.5.1@M=Xfs@ "Physical Review B-Condensed Matter"/=Xfs@ Article$M_l\@_T:W 1987 Jun 15 $M_l\@_T:W35$M_l\@_T:W17$M_l\@_T:W 9387-9390 $M_l\@_T:W%B\\As01mesant\Procite Databases\WCS\Articles\Goldman VJ 1987 06.pdf,$M_l\@_T:W$M_l\@_T:W+151$M_l\@_T:W11720;@@.XJarosik, N. C. //Mccombe, B. D. //Shanabrook, B. V. //Comas, J. //Ralston, J.//Wicks, G.X=o\"Suny Buffalo,Dept Phys/Buffalo//Ny/14260 ; Cornell Univ,Dept Elect Engn/Ithaca//Ny/14853 ; Usn,Res Lab/Washington//Dc/20375 ; Cornell Univ,Natl Res & Resource Facil Submicron=o\">Binding of Shallow Donor Impurith ; Univ Rostock,Inst Phys/O-2500 Rostock//Germany ; Univ Marburg,Dept Phys/W-3550 Marburg//Germany ; Univ Marburg,Ctr Mat Sci/W-3550 Marburg//Germany ; Fraunhofer Inst Appl Solid State Phys/W-78008=h+q|Unusually Slow Temporal Evolution of Femtosecond 4-Wave- Signals in Intrinsic GaAs Quantum-Wells: Direct Evidence for the Dominance of Interaction Effects8=h+q|03.2.28=h+q|8=h+q| Physical Review Letters8=h+q| Article$M_@_\ Nov 2, 1992 $M_@_\69$M_@_\18$M_@_\ 2725-2728 Hx~5 )ies in Quantum-Well Structures>=o\"03.1.1=o\" Physical Review Letters=o\" Article$M_D4@_,Z!D 1985 Mar 25 $M_D4@_,Z!D54$M_D4@_,Z!D12$M_D4@_,Z!D 1283-1286 $M_D4@_,Z!D%B\\As01mesant\Procite Databases\WCS\Articles\Jarosik NC 1985 03.pdfB$M_D4@_,Z!D+171$M_D4@_,Z!D11840;@|.]Kim, D. S. //Shah, J. //Damen, T. C. //Schafer, W. //Jahnke, F. //Schmittrink, S.//Kohler, K.]8=h+q|At&T Bell Labs/Holmdel//Nj/07733 ; Kfa Julich ; Univ Rostock,Inst Phys/O-2500 Rostock//Germany ; Univ Marburg,Dept Phys/W-3550 Marburg//Germany ; Univ Marburg,Ctr Mat Sci/W-3550 Marburg//Germany ; Fraunhofer Inst Appl Solid State Phys/W-78008=h+q|Unusually Slow Temporal Evolution of Femtosecond 4-Wave- Signals in Intrinsic GaAs Quantum-Wells: Direct Evidence for the Dominance of Interaction Effects8=h+q|03.2.28=h+q|8=h+q| Physical Review Letters8=h+q| Article$M_@_\ Nov 2, 1992 $M_@_\69$M_@_\18$M_@_\ 2725-2728 >h1?R)Silverberg, P.//Omling, P.//Samuelson, L. HFHFHFHFg[K{) >@R)Silverberg, P.//Omling, P.//Samuelson, L. HFHFHFHFHFHFHFHFHFHFHF2Hole Photoionization Cross-Sections of EL2 in GaAs2HF01.5.3 Metastable Centers: EL2HF Applied Physics LettersHF1988HF52HF20HF 1689-1691 HF%D\\As01mesant\Procite Databases\WCS\Articles\SILVERBERG P 1988 05.pdfDHF' 0003-6951 HF)lENGLISH UNIV LUND, DEPT SOLID STATE PHYS, BOX 118, S-22100 LUND, SWEDEN, N3914 Copyright 2003 SciSearch PluslHFI+110HF64850;1?.\Leo, K. //Shah, J. //Gobel, E. O. //Damen, T. C. //Schmittrink, S. //Schafer, W.//Kohler, K.\=XfsvHAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell le-Quantum-Well StructureW=XfsvH04.1.1.6=XfsvH Physical Review Letters=XfsvH Article$M_l\@_TC 1991 Jan 14 $M_l\@_TC66$M_l\@_TCC11940o^?N~ 0;@.\Leo, K. //Shah, J. //Gobel, E. O. //Damen, T. C. //Schmittrink, S. //Schafer, W.//Kohler, K.\=XfsvHAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; Fraunhofer Inst Appl Solid State Phys/W-7800 ; Univ Marburg/W-3550 Marburg//Germany ; Forschungszentrum Julich,Hlrz/W-5170 Julich//Germany=XfsvHWCoherent Oscillations of a Wave Packet in a Semiconductor Double-Quantum-Well StructureW=XfsvH04.1.1.6=XfsvH Physical Review Letters=XfsvH Article$M_l\@_TC 1991 Jan 14 $M_l\@_TC66$M_l\@_TC2$M_l\@_TC201-204$M_l\@_TC%=\\As01mesant\Procite Databases\WCS\Articles\Leo K 1991 01.pdf=$M_l\@_TC*eWe present the first study of the dynamics of an extended electronic wave packet in a solid. The wave packet is created in a GaAs/AlGaAs double-quantum-well structure by ultrashort pulse excitation. We observe the oscillatory motion of the wave packet between the two wells by using time-resolved degenerate four-wave-mixing and pump-and-probe spectroscopy.e$M_l\@_TC+199$M_l\@_TC,*Relaxation/ Molecules/ Evolution/ Excitons*$M_l\@_TC11940;1?.\\As01mesant\Procite Databases\WCS\Articles/Pukite PR 1985.pdf,(=t](=t]+1549$M_Ll@_d`L121506X.<@Kohn W.//Sham, L.J.=ht2s<DSelf-Consistent Equations Including Exchange and Correlation EffectsD=ht2s<!01.3.1 Electron Band Calculations!=ht2s< Physical Review=ht2s<1965$M_4$@_4140$M_4$@_4 A1133-1138=ht2s<=ht2s<%>\\As01mesant\Procite Databases\WCS\Articles\Kohn W 1965 11.pdf>$M_4$^@_4,Local Density Approximation$M_4$@_461840gli, P. RHHB|At&T Bell Labs/Holmdel//Nj/07733 ; Univ Modena,Departim ento Fis/I-41100 Modena//Italy ; at&T Bell Labs/Murray Hill//Nj/07940|HHB`Determination of Intervalley Scattering Rates in GaAs by Subpicosecond Luminescence SpecPhysical Review LettersHH`*ZN~ ;@/RShah, J. //Deveaud, B. //Damen, T. C. //Tsang, W. T. //Gossard, A. C. //Lugli, P. RHHB|At&T Bell Labs/Holmdel//Nj/07733 ; Univ Modena,Departim ento Fis/I-41100 Modena//Italy ; at&T Bell Labs/Murray Hill//Nj/07940|HHB`Determination of Intervalley Scattering Rates in GaAs by Subpicosecond Luminescence Spec troscopy`HHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEHHB Physical Review LettersHH B ArticleHHB 1987 Nov 9 HHB59HHB19HHB  2222-2225 HHB%>\\As01mesant\Procite Databases\WCS\Articles\Shah J 1987 11.pdf>HHB+199HHB !12220!ZExtremely Wide Modulation Bandwidth in a Low Threshold Current Strained Quantum Well LaserZp=0vԫ10.5.1p=0vԫ Applied Physi!ZExtremely Wide Modulation Bandwidth in a Low Threshold Current Strained Quantum Well LaserZp=0vԫ10.5.1p=0vԫ Applied Physiԣ 1378-1380 $M_ԬĮ@_ԣ%<\\Aeron\Procite Databases\WCS\Articles\Suemune I 1988 10.pdf'XhH9X!XF!!^P=0vԫ+158$M_ԬĮ@_ԣ12300";[?\0}Turberfield, A. J. //Haynes, S. R. //Wright, P. A. //Ford, R. A. //Clark, R. G. //Ryan, J. F. //Harris, J. J. //Foxon, C. T. } =r2[Univ Oxford,M_ԬĮ@_ԣ12300GN~ ! )!;@ 07Suemune, I. //Coldren, L. A. //Yamanishi, M. //Kan, Y. 7p=0vԫ,Hiroshima Univ,Fac Engn/Hiroshima 724//Japan,p=0v!ZExtremely Wide Modulation Bandwidth in a Low Threshold Current Strained Quantum Well LaserZp=0vԫ10.5.1p=0vԫ Applied Physi!cs Lettersp=0vԫ Article$M_ԬĮ@_ԣ 1988 Oct 10 $M_ԬĮ@_ԣ53$M_ԬĮ@_ԣ!15$M_ԬĮ@_ԣ 1378-1380 $M_ԬĮ@_ԣ%A\\As01mesant\Procite Databases\WCS\Articles\Suemune I 1988 10.pdf,XhH9X!XF!c!P=0vԫ+158$M_ԬĮ@_ԣ12300";@\0}Turberfield, A. J. //Haynes, S. R. //Wright, P. A. //Ford, R. A. //Clark, R. G. //Ryan, J. F. //Harris, J. J. //Foxon, C. T. } =r2[Univ Oxford,"Clarendon Lab/Oxford//England ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England[ =r2LOptical-Detection of the Integer and Fractional Quantum Hall-Effects in GaAs"L =r202.6.1 =r2 Physical Review Letters =r2 Article$M_td@_\.8"t 1990 Jul 30 $M_td@_\.8t65$M_td@_\.8t5$M_td@_\.8t637-640$M_td@_\.8t%F\"\As01mesant\Procite Databases\WCS\Articles\Turberfield AJ 1990 07.pdf,$M_td@_\.8t$M_td@_\.8t+153$M_td@_\.8t1238)YN~0 %(^=`vs Journal of Crystal Growth(^=`vs Article$M_@_>1981$M_@_>55%$M_@_>1$M_@_>10-23$M_@_>%;\\As01mesant\Procite Databases\WCS\Articles/Low TS 1981.pdf;%Y$M_@_>+161$M_@_>12520&;@$1 Datta, S.  =3rx 0Purdue Univ,Sch Elect Engn/W Lafayette//in/479070=3rx Quantum Devices&=3rx 09.2.4=3rx  !Superlattices and Microstructures!=3rx  Article$M_Lst@_|t 4198&9$M_Lst@_|t 46$M_Lst@_|t 41$M_Lst@_|t 483-93$M_Lst@_|t 4%<\\As01mesant\Procite& Databases\WCS\Articles\Datta S 1989.pdf,0=3rx 0=3rx +125$M_Lst@_|t 412580'=@r̬04.1.3=@r̬ Physical Review Lettersp=@r̬ Article$M_@_'=@r̬04.1.3=@r̬ Physical Review Lettersp=@r̬ Article$M_@_'=@r̬04.1.3=@r̬ Physical Review Lettersp=@r̬ Article$M_@_6 1';@81hDatta, S. //Melloch, M. R. //Bandyopadhyay, S. //Noren, R. //Vaziri, M. //Miller, M. //Reifenberger, R. hp=@r̬^Purdue Univ,Sch Elect Engn/W Lafa'yette//in/47907 ; Purdue Univ,Dept Phys/W Lafayette//in/47907^p=@r̬9Novel Interference Effects Between Parallel Quantum Wells3=@r̬'=@r̬04.1.3=@r̬ Physical Review Lettersp=@r̬ Article$M_@_' 1985 Nov 18 $M_@_55$M_@_21$M_@_ 2344-2347 $M_@_'%?\\As01mesant\Procite Databases\WCS\Articles\Datta S 1985 11.pdf,$M_@_$M_@_+158$M_@_12600'(l%9\\Aeron\Procite Databases\WCS\Articles\Daw MS 1979 12.pdf9=u̬+119$M_l\@_Tl12630156 $M_l\@_T(l%9\\Aeron\Procite Databases\WCS\Articles\Daw MS 1979 12.pdf9=u̬+119$M_l\@_Tl12630156 $M_l\@_T(l%9\\Aeron\Procite Databases\WCS\Articles\Daw MS 1979 12.pdf9=u̬+119$M_l\@_Tl12630156 $M_l\@_T(l%9\\Aeron\Procite Databases\WCS\Articles\Daw MS 1979 12.pdf9=u̬+119$M_l\@_Tl12630l%9\\Aeron\Procite Databases\WCS\Articles\Daw MS 1979 12.pdf9=u̬+119$M_l\@_Tl12630Cs'N~1 )?tt 7/22/1975 P=?tt US3896473 P=?ttcUS3074145 US3389457 US3469209 US3566214 US3689993 US3691476 US3740617 US37557)52 US3758875 US3761783cP=?ttSwan, Proc. 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Sze, Physics of Semiconductor Devices, Wiley-Interscience, N.Y. 1969, page )702.P=?tt"+US4001858 US4075650 US4106959 US4152718 US4161701 US4197551 US4379005 US4379307 US4518255 US4617532 US4745445 US4745446 US4982243 US5075758 US5907768 U)S6248664 US3974514 US3986192 US4291279 US4315275 US4350990 US4374012 US4623086 US4661834 US4748483 US4920401 US5608749 US5652436 US5672240 US5872415+P=?tt%;\\As01mes)ant\Procite Databases\WCS\Patents\US03896473__.pdf;P=?tt'H01L 1/12; H01L 1/18P=?tt+30P=?tt)340*R2234660A1 FR2234660B1 GB1469978A IT1014359A JP50034470A2 JP57059655B4 US3915765i=Ho21US3473978 US3721583 US3751310 US3783009 US38217771=Ho*R2234660A1 FR2234660B1 GB1469978A IT1014359A JP50034470A2 JP57059655B4 US3915765i=Ho21US3473978 US3721583 US3751310 US3783009 US38217771=Ho*R2234660A1 FR2234660B1 GB1469978A IT1014359A JP50034470A2 JP57059655B4 US3915765i=Ho21US3473978 US3721583 US3751310 US3783009 US38217771=Ho*R2234660A1 FR2234660B1 GB1469978A IT1014359A JP50034470A2 JP57059655B4 US3915765i=Ho21US3473978 US3721583 US3751310 US3783009 US38217771=Hom-N~ 1*<@hCho, A. Y.//Reinhart, F. K.=Ho2=Ho2=Ho2=Ho2*PMBE technique for fabricating semiconductor devices having low series resistanceP=Ho206.1.3=Ho2706518*=Ho2 US3915765 =Ho2US=Ho2 10/28/1975 =Ho2iCA1021670A1 DE2429634A1 F*R2234660A1 FR2234660B1 GB1469978A IT1014359A JP50034470A2 JP57059655B4 US3915765i=Ho21US3473978 US3721583 US3751310 US3783009 US38217771=Ho*2Cho et al., Magnesium-Doped GaAs and Al.sub.x Ga.sub.1.sub.-x as by Molecular Beam Epitaxy, J. Appl. Phys., Vol. 43, No. 12, Dec. 1972, pp. 5118-5123. Tietjen et al., Preparation . . . *. GaAs.sub.1.sub.-x P.sub.x using Arsine \A Phosphine, J. El=Ho2"]US3992233 US4037241 US4063974 US4071383 US4086108 US4120705 US4137107 US4159919 US4181544 US419+;1?j1HDawson, P. //Moore, K. J. //Duggan, G. //Ralph, H. I. //Foxon, C. T. B. H/=oI/Philips Res Labs/Redhill Rh1 5ha/Surrey/England//+=oI}Unambiguous Observation of the 2s State of the Light-Hole Heavy-Hole Excitons in GaAs-(Alga) as Multiple-Quantum- Structures}/=oI03.1.3+/=oI/=oI "Physical Review B-Condensed Matter"/=oI Article$M_4mln@_dnTI "Physical Review B-Condensed Matter"/=oI Article$M_4mln@_dnT^N~J 1 +l 1986 Oct 15 $M_4mln@_dnTl34$M_4mln@_dnTl8$M_4mln@_dnTl 6007-6010 $M_4mln@_dnTl+%@\\As01mesant\Procite Databases\WCS\Articles\Dawson P 1986 10.pdf,$M_4mln@_dnTl$M_4mln@_dnTl+123$M_4mln@_dnTl12650+,>@\Dabrowski, J.//Scheffler, M.HF HFBIsolated Aresnic-Antisite Defect in GaAs and the Properties of EL2B,HF01.5.3 Metastable Centers: EL2HF "Physical Review B-Condensed Matter"HF1989,HF40HF15HF 10391-10401 HF%C\\As01mesant\Procite ,Databases\WCS\Articles\Dabrowski J 1989 11.pdfCHF' 0163-1829 HF)ENGLISH MAX PLANCK GESELL, FRITZ HABER INST, FARADAYWEG 4-6,, D-1000 BERLIN 33, FED REP GER, CA788 Copyright 2003 SciSearch PlusHF+121HF64860-BldFar-Infrared Response of One-Dimensional Electronic Systems in Single- and Two-Layered Quantum Wires40/=frDBl 0/=frDBl-BldFar-Infrared Response of One-Dimensional Electronic Systems in Single- and Two-Layered Quantum Wires40/=frDBl 0/=frDBlfrDBl04.4.5Dt'W1 -;@13Demel, T. //Heitmann, D. //Grambow, P. //Ploog, K. 30/=frDBl7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700070/=frD-BldFar-Infrared Response of One-Dimensional Electronic Systems in Single- and Two-Layered Quantum Wires40/=frDBl 0/=frDBl-0/=frDBl0/=frDBl0/=frDBl0/=frDBl0/=frDBl04.4.5-0/=frDBl0/=frDBl "Physical Review B-Condensed Matter"0/=frDBl Article$M_@_7\ 198-8 Dec 15 $M_@_7\38$M_@_7\17$M_@_7\ 12732-12735 $M_@_7\%?\\As0-1mesant\Procite Databases\WCS\Articles\Demel T 1988 12.pdf?$M_@_7\+164$M_@_7\12680.ߊ(=1?R#Bouley, Jean-Claude//Correc, Pascal#x=uKDistributed feedback semiconductor laser of continuously tunable wavelengthKx=6031 x=u."Patent Abstract of Japan, vol. 7, No. 174 (E-190-1319) 2.8.83 and JP-A-58-78488 (Kokusia Denshi Denwa K.K.).; Electronics Letters, vol. 20, No. 23, Nov. 1984, pp. 957-959, Staines, Middlesex, G.B.., L. D. Westbrook et al.; Patent Abstract of Japan, vol. 9, 201 (E-336-1924), 17.8.85 and JP-A-60-66490 (Nippon Denki K.K.).; Electronics Letters, vol. 21, No. 2, 17.1.1985, pp. 63-65, Staines, Middl^N~2 1.ߊ(=@R#Bouley, Jean-Claude//Correc, Pascal#x=uKDistributed feedback semiconductor laser of continuously tunable wavelengthKx=.u10.4.2/=u0x=u US4802187 x=u 1/31/1989 x=u.^DE3781931C0 DE3781931T2 EP0246959A1 EP0246959B1 FR2598862A1 FR2598862B1 JP62281489A2 US4802187^x=u US4726031 x=u."Patent Abstract of Japan, vol. 7, No. 174 (E-190-1319) 2.8.83 and JP-A-58-78488 (Kokusia Denshi Denwa K.K.).; Electronics Letters, vol. 20, No. 23, Nov. 1984, pp. 957-959, Staines, Middlesex, G.B.., L. D. Westbrook et al.; Patent Abstract of Japan, vol. 9, 201 (E-336-1924), 17.8.85 and JP-A-60-66490 (Nippon Denki K.K.).; Electronics Letters, vol. 21, No. 2, 17.1.1985, pp. 63-65, Staines, Middl.esex, G.B., M. Yamaguchi et al.; Electronics Letters, vol. 20, No. 24, 22.11.1984, pp. 1016-1018, Staines, Middlesex, G. B., H. Soda et al."x=u"US4920542 US49320.34 US4942582 US4958357 US5008893 US5044713 US5048049 US5070509 US5091799 US5185759 US5304283 US5321716 US5392308 US5499261 US5537432 US5568311 US5592503 US5602864 US5607876 US5651018 US5703897 US58944/;1?1JDenbaars, S. P. //Maa, B. Y. //Dapkus, P. D. //Danner, A. D. //Lee, H. C. J(=p6,vUniv So Calif,Dept Elect Engn & Mat Sci/Los Angeles//Ca/90089 ;/ Univ So Calif,Ctr Photon Technol/Los Angeles//Ca/90089v(=p6,Homogeneous and Heterogeneous Thermal-Decomposition Rates of Trimethylgallium and Arsine and Their Rel=oyCtr Natl Etud Telecommun/F-22300 Lannion//France ; Ctr Natl^N~1 0;@1NDeveaud, B. //Clerot, F. //Roy, N. //Satzke, K. //Sermage, B. //Katzer, D. S. NL=oyCtr Natl Etud Telecommun/F-22300 Lannion//France ; Ctr Natl0 Etud Telecommun/F-92120 Bagneux//France ; Usn,Res Lab/Washington//Dc/20375L=oyGEnhanced Radiative Recombination of Free-Excitons in GaAs Quantum-WellsG0L=oy03.3.1L=oyL=oy Physical Review LettersL=oy Article0$M_ -D.@_<.l 1991 Oct 21 $M_ -D.@_<.l67$M_ -D.@_<.l17$M_ -D.@_<.l 2355-2358 0$M_ -D.@_<.l%A\\As01mesant\Procite Databases\WCS\Articles\Deveaud B 1991 10.pdf,$M_ -D.@_<.l$M_ -D.@_<.l*Radiative properties 0of free excitons in a single GaAs quantum well are studied under resonant excitation. Enhanced radiative recombination of the excitons, caused by the breakdown of the translational symmetry of the sys0tem, is evidenced by the very short lifetime as well as by the strong intensity of the signal. Dephasing mechanisms, by transferring the excitons to nonradiative states, increase the observed lifetime1@f4Manasreh, M.O.//Look, D.C.//Evans, K.R.//Stutz, C.E.4"=tInfrared-Absorption of Deep Defects in Molecular-Beam-Epitaxial GaAs-Layers grown at 5200-degrees-C - Observation of an EL2-like Defect"=t01.5.3 Metastable Centers: EL2"=t "Physical Review B-Condensed Matter5""=t1990$M_D@_41$M_D@_14$M_D@_ 10272-10275 5$M_D@_%C\\As01mesant\Procite Databases\WCS\Articles\MANASREH MO 1990 05.pdfC$M_D@_' 0163-1829 $M_D@_)ENGLI5SH Wright State Univ, Res Ctr, Dayton OH, 45435 Wright Res & Dev Ctr, Elra, Electr Technol Lab, Wright Patterson AFB, OH, 45433 Universal Energy Syst, Dayton OH, 45432 DV682 Copyright 2003 SciSearch P5lus $M_D@_$M_D@_$M_D@_$M_D@_$M_D@_5$M_D@_$M_D@_$M_D@_ $M_D@_ $M_D@_$M_6;1?2Dupuis, R. D. //Dapkus, P. D. -=v0'Rockwell Int,Electr Rech Ctr,Div Electr'-=v0uRoom-Temperature Operatio6n of Ga(1-X)Alxas-GaAs Double-Heterostructure Lasers Grown by Metalorganic Vapor-Depositionu-=v006.4.3-=v0 Applied Physics _ Applied Physics Letterstters^N~ 4 7;@22.Fritz, I. J. //Gourley, P. L. //Dawson, L. R. .=lq_&Sandia Natl Labs/Albuquerque//Nm/87185&=lq_UCritical L7ayer Thickness in In0.2ga0.8as/GaAs Single Strained Quantum-Well StructuresU=lq_07.2.2=lq_ Applied Physics Letters7=lq_ ArticleZ$M_n.~P< 41;255042 US4457582 US4575180 US5416872 USRE31255 US4188708 US4216486 US4296998 US4360729 US4867371 US4964693 US6198168 US6282006 US4220960 US4233614 US5047364 US5173795 US6328482 US4644379 US4691987 US4;017962 US4144503 US4281253 US4294510 US4732446 US4784454 US6090636 US61501885=@pF%;\\As01mesant\Procite Databases\WCS\Patents\US03968564__.pdf;;|=@pF' B01J 17/0 =@pF+31=@pF430<p<@ 'Suzuki, M. //Uenoyama, T. //Yanase, A. '==@itx<Matsushita Elect Ind Co Ltd,Cent Res Labs/Seika 61902/Kyoto/Japan ; Univ Osaka Prefecture,Coll Int<egrated Arts & Sci/Sakai/Osaka 591/Japan==@itx<IFirst-Principles Calculations of Effective-Mass Parameters of AlN and GaNI==@itx<0<1.3.4 Electron Masses==@itx< "Physical Review B-Condensed Matter"==@itx< Article'E$M_0E2E@_2Ex'E Sep 15, 1<995 'E$M_0E2E@_2Ex'E 52'E$M_0E2E@_2Ex'E11'E$M_0E2E@_2Ex'E 8132-8139 'E$M_0E2E@_2Ex'E%@\\As01mesan=p<u=? [Qian, W. //Skowronski, M. //Degraef, M. //Doverspike, K. //Rowland, L. B. //Gaskill, D. K. [ =t,rCarnegie Mellon Univ,Dept Mat Sci & Engn/Pitts=burgh//Pa/15213 ; Usn,Res Lab,Adv Mat Synth Lab/Washington//Dc/20375r =t,kMicrostructural Characterization of Alpha-GaN Films Grown on Sapphire by Organometallic V=apor-Phase Epitaxyk =t,07.5.3 =t, Applied Physics Letters =t, Article$M_Br241<1< center. The obtained results show that the cubic approximation is fairly successful in the analysis for the valence-band structures of the wurtzite-type nitrides. Further, the calculated parameters fo< r GaN are consistent with the observed ones.z'E$M_0E2E@_2Ex'E+134'E$M_0E2E@_2Ex'E,eElectronic-Structure/ Gallium Nitride/ Buffer Layer/ Semiconductors< T/ Molecules/ Exchange/ Growth/ Aine'E$M_0E2E@_2Ex'E3330=p<@ [Qian, W. //Skowronski, M. //Degraef, M. //Doverspike, K. //Rowland, L. B. //Gaskill, D. K. [ =t,rCarnegie Mellon Univ,Dept Mat Sci & Engn/Pitts=burgh//Pa/15213 ; Usn,Res Lab,Adv Mat Synth Lab/Washington//Dc/20375r =t,kMicrostructural Characterization of Alpha-GaN Films Grown on Sapphire by Organometallic V=apor-Phase Epitaxyk =t,07.5.3 =t, Applied Physics Letters =t, Article$M_=T?@_?0, Mar 6, 1995 $M_T?@_?0, 66$M_T?@_?0,10$M_T?@_?0, 1252-1254 $M_T=?@_?0,%D\\As01mesant\Procite Databases\WCS\Articles/Qian W 1995, March 6.pdfD+134$M_T?@_?0,,`Molecular-Beam Epitaxy/ Ain Buffer Layer/ Gallium Nitride/>j.=1?T Bockelmann, U. //Bastard, G. x?=`/whEcole Norm Super,Phys Mat Condensee Lab,24 Rue Lhomond/F- ; Tech Univ Munich,Walter Schottky Inst/W-8046h>x?=`/wnPhonon-Scattering and Energy Relaxation in 2-Dimensional, One-Dimensional, and Zero-Dimensional Electron Gasesnx?=`/w03.5.4yuȒJz \ d A$M_|~@_~ s 2564-2566 s$M_|~@_~ s%C\\As01mesant\Procite Databases\WCS\Articles\Huffaker DL 1998 07.pdfCs$M_|~@_~ s*qRoom-tAemperature lasing at the wavelength of 1.31 mu m is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm(2) is obtained at Aa wavelength of 1.23 mu m. The room-temperature lasing at 1.31 mu m is obtained with mm a threshold current density of 270 A/cm(2) using high-reflectivity facet coatings. The temperature-dependent thrAeshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K. (C) 1998 American Institute of Physics. [S000At3-6951(98)03644-4].qs$M_|~@_~ s+125s$M_|~@_~ s12960B;@2kJohnson, A. T. //Kouwenhoven, L. P. //Dejong, W. //Vandervaart, N. C. //Harmans, C. J. P. M.//Foxon, C. T. kl=v$~mDelft Univ Technol,Fac Appl PhBys/2600 Ga Delft//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandml=v$~DZero-Dimensional States and Single Electron Charging in Quantum DotsDBl=v$~04.4.1m=v$~ Physical Review Lettersl=v$~ Article$M_0<1@_41 SeBp 7, 1992 $M_0<1@_4169$M_0<1@_4110$M_0<1@_41 1592-1595 $M_0<1@_41%B\\As01Cj.=1? 5Chichibu, S. //Azuhata, T. //Sota, T. //Nakamura, S. 5@=tt^zSci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba ; Waseda Univ,Dept Elect  :jN~9D1T @=u&d05.2.2/=u&d Physical Review Letters4=u&d Article$M_t@_l:7 1988 Nov 28 @$M_t@_l:761$M_t@_l:722$M_t@_l:7 2546-2549 $M_t@_l:7%F\\As01mesant\Procit@e Databases\WCS\Articles\Yablonovitch E 1988 11.pdfF$M_t@_l:7+118$M_t@_l:75240A;@2FHuffaker, D. L. //Park, G. //Zou, Z. //Shchekin, O. B. //Deppe, D. G. F=xrP0Univ Texas,Dept Elect & Comp Engn,Microelect Res0A=xrP61.3 Mu M Room-Temperature GaAs-Based Quantum-Dot Laser6=xrP10.2.3=xrP Applied Physics LettersA=xrP Articles$M_|~@_~ s Nov 2, 1998 s$M_|~@_~ s73s$M_|~@_~ s18sBys/2600 Ga Delft//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandml=v$~DZero-Dimensional States and Single Electron Charging in Quantum DotsDBl=v$~04.4.1m=v$~ Physical Review Lettersl=v$~ Article$M_0<1@_41 SeBp 7, 1992 $M_0<1@_4169$M_0<1@_4110$M_0<1@_41 1592-1595 $M_0<1@_41%=\\Aero@_4110$M_0<1@_41 1592-1595 $M_0<1@_41%=\\Aero1595 $M_0<1@_41%=\\Aero)YILT l Bl=v$~04.4.1m=v$~ Physical Review Lettersl=v$~ Article$M_0<1@_41 SeBp 7, 1992 $M_0<1@_4169$M_0<1@_4110$M_0<1@_41 1592-1595 $M_0<1@_41%B\\As01Bmesant\Procite Databases\WCS\Articles\Johnson AT 1992 09.pdf,$M_0<1@_41$M_0<1@_41*We observe new transport effects in lateral quantum dots Bwhere zero-dimensional (0D) states and single electron charging coexist. In linear transport we see coherent resonant tunneling, described by a Landauer formula despite the many-body charging interactBion. In the nonlinear regime, Coulomb oscillations of a qunatum dot with about 25 electrons show structure due to 0D excited states as the bias voltage increases, and the current-voltage characteristiBc has a double-staircase shape.$M_0<1@_41+185$M_0<1@_4112990Cj.=1? 5Chichibu, S. //Azuhata, T. //Sota, T. //Nakamura, S. 5@=tt^zSci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba ; Waseda Univ,Dept Elect w27$M_@_w 4188-4190 C$M_@_w%=\\Aeron\Procite Databases\WCS\Articles\Chichibu S 1996 12.pdf=$M_@_w*4Emission mechanisms of InGaN single quantum well blue and Cgreen light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of exciestigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of exci^vN~2d L1Cj.=@ 5Chichibu, S. //Azuhata, T. //Sota, T. //Nakamura, S. 5@=tt^zSci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba ; Waseda Univ,Dept Elect CEngn & Comp Engn,Shinjuku Ku,Tokyo ; Nichia Chem Ind Ltd,Dept Res & Dev,Anan,Tokushima 774,Japan@=tt^z[Spontaneous Emission of Localized Excitons in InGaN Single aCnd Multiquantum Well Structures[@=tt^z03.5.5@=tt^z Applied Physics Letters@=tt^z ArticleC$M_@_w Dec 30, 1996 $M_@_w69$M_@_w27$M_@_w 4188-4190 C$M_@_w%B\\As01mesant\Procite Databases\WCS\Articles\Chichibu S 1996 12.pdfB$M_@_w*4Emission mechanisms of InGaN single quantum well blueC and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination ofC excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confineD;1?2EKuech, T. F. //Veuhoff, E. //Kuan, T. S. //Deline, V. //Potemski, R. Ew=%oP1Ibm Corp,Thomas J Watson Res Ctr,Pob 218/Yorktown1wD=%oPdThe Influence of Growth Chemistry on the MOVPE Growth of and AlxGa1-xAs Layers and Heterostructuresdw=%oP06.4.4w=%HFHF^N~T1 F;@3SMeynadier, M. H. //Nahory, R. E. //Worlock, J. M. //Tamargo, M. C. //Sturge, M. D. S=pwyOBell Commun Res/Red Bank//Nj/07701 ; Dartmouth Coll,DeFpt Phys/Hanover//Nh/03755O=pwymIndirect-Direct Anticrossing in GaAs-AlAs Superlattices Induced by an Electric-Field - Evidence of G-X MixingcF=pwy Symbol=pwy ymbol=pwy04.3.1ymbol=pwy Physical Review Lettersymbol=pwyF Article$M_<,@_$Vg< 1988 Mar 28 $M_<,@_$Vg<60$M_<,@_$Vg<13$M_<,@_$Vg@p+Feenstra, R.M.//Woodall, J.M.//Pettit, G.D.HFHFHFHFEHFHFHFHFHFEHFHFHFHFHFEHFHFHFpObservation of Bulk Defects by Scanning Tunneling Microscopy and Spectroscopy - ArseniEc Antisite Defects in GaAspHF01.5.3 Metastable Centers: EL2HF Physical Review LettersHFE1993HF71HF8HF 1176-1179 HF%C\\AsE01mesant\Procite Databases\WCS\Articles\FEENSTRA RM 1993 08.pdfCHF' 0031-9007 HF)oENGLISH IBM CORP, THOMAS J WATSON RES CTR,F;1?3SMeynadier, M. H. //Nahory, R. E. //Worlock, J. M. //Tamargo, M. C. //Sturge, M. D. S=pwyOBell Commun Res/Red Bank//Nj/07701 ; Dartmouth Coll,DeFpt Phys/Hanover//Nh/03755O=pwymIndirect-Direct Anticrossing in GaAs-AlAs Superlattices Induced by an Electric-Field - Evidence of G-X MixingcFg<13080G:+108$M_T@_^13090w^N~t G;@"3)Moore, K. J. //Dawson, P. //Foxon, C. T. )=Hr!/Philips Res Labs/Redhill Rh1 5ha/Surrey/England/=Hr!^EffectGs of Electronic Coupling on the Band Alignment of Thin GaAs/AlAs Quantum-Well Structures^=Hr!03.1.2=Hr! "Physical Review B-CoGndensed Matter"=Hr! Article$M_T@_^ 1988 Aug 15 $M_T@_^38$M_T@_^G5$M_T@_^ 3368-3374 $M_T@_^%@\\As01mesant\Procite Databases\WCS\Articles\Moore KJ 1988 08.pdf@$M_T@_G?^+108$M_T@_^13090H;@63,Neave, J. H. //Joyce, B. A. //Dobson, P. J. ,=ht<jPhilips Res Labs/Redhill Rh1 5ha/Surrey/England ; Univ London Imperial Coll Sci & Technol,DepHt Phys/Londonj=ht<dDynamic RHEED Observations of the MBE Growth of GaAs: Substrate-Temperature and Beam Azimuth Effectsd=ht<0H6.1.2=ht< 0Applied Physics a-Materials Science & Processing0=ht< Article$M_4$@_41984H$M_4$@_434$M_4$@_43$M_4$@_4179-184B=ht<%=\\As01mesant\Procite DataI;1?^3JNotzel, R. //Ledentsov, N. N. //Daweritz, L. //Ploog, K. //Hohenstein, M. J=pp|r̬iMax Planck Inst Festkorperforsch/W-7000 Stuttgart ; Max Planck311) A oriented substrates by molecular-beam epitaxy has been ach5eN~u H6.1.2=ht< 0Applied Physics a-Materials Science & Processing0=ht< Article$M_4$@_41984H$M_4$@_434$M_4$@_43$M_4$@_4179-184B=ht<%=\\As01mesant\Procite DataHbases\WCS\Articles\Neave JH 1984.pdf=$M_4$@_4+157$M_4$@_413110I;@^3JNotzel, R. //Ledentsov, N. N. //Daweritz, L. //Ploog, K. //Hohenstein, M. J=pp|r̬iMax Planck Inst Festkorperforsch/W-7000 Stuttgart ; Max PlanckI Inst Met Res/W-7000 Stuttgart 80//Germanyi=pp|r̬KSemiconductor Quantum-Wire Structures Directly Grown on High-Index SurfacesK=pp|r̬I06.5.1=pp|r̬ "Physical Review B-Condensed Matter"=pp|r̬ Article$M_@_q 1992 Feb 15 I$M_@_q45$M_@_q7$M_@_q 3507-3515 $M_@_q%@\\As01mesant\Procite DatabJ;Ӯ1?h3dPang, S. W. //Lincoln, G. A. //Mcclelland, R. W. //Degraff, P. D. //Geis, M. W. //Piacentini, W. J. d>=qJC#Mit,Lincoln Lab/Lexington//Ma/02173J#>=qJCEffects of Dry Etching on GaAs>=qJC08.2.2>=qJC (Journal of Vacuum Science & Technologctures. The integrated luminescence of the GaAs quantum-wire structK{ ;2 \1Iases\WCS\Articles\Notzel R 1992 02.pdf@Y=pp|r̬*The direct synthesis of GaAs quantum-wire structures on (311) A oriented substrates by molecular-beam epitaxy has beeIn achieved due to the in situ formation of an array of nanometer-scale macrosteps or facets with a periodicity determined by energy rather than growth-related parameters. These kinds of macrosteps areI formed by breaking up a flat surface with high surface energy into facets corresponding to planes with lower surface energy. Reflection high-energy electron diffraction (RHEED) directly reveals the fIormation of such macrosteps on the GaAs (311) A surface comprised of two sets of {331} facets oriented along the [233BAR] direction. The lateral periodicity of 32 angstrom is determined from the splitIting of the zeroth-order streak observed along [233BAR] into sharp satellites and the height of the steps of 10.2 angstrom from the splitting along its length. The RHEED intensity dynamics during growI th of GaAs/AlAs multilayer structures show a pronounced oscillation at the onset of GaAs and AlAs, growth, respectively, due to a phase change of the surface corrugation during the deposition of the fI irst monolayers. The complete structure then contains alternating thicker and thinner channels of GaAs and AlAs forming the quantum wires oriented along [233BAR], which is confirmed by high-resolutionJ#>=qJCEffects of Dry Etching on GaAs>=qJC08.2.2>=qJC (Journal of Vacuum Science & TechnologJy B(>=qJC Article8$M_AC@_C5819838$M_AC@_C5818$M_AC@_C5848t15$M_ܰ@_ t15$M_ܰ@_ ^N~\1d1J;@h3dPang, S. W. //Lincoln, G. A. //Mcclelland, R. W. //Degraff, P. D. //Geis, M. W. //Piacentini, W. J. d>=qJC#Mit,Lincoln Lab/Lexington//Ma/02173J#>=qJCEffects of Dry Etching on GaAs>=qJC08.2.2>=qJC (Journal of Vacuum Science & TechnologJy B(>=qJC Article8$M_AC@_C5819838$M_AC@_C5818$M_AC@_C5848J$M_AC@_C58 1334-1337 8$M_AC@_C58%<\\As01mesant\Procite Databases\WCS\Articles/Pang SW 1983.pdf< =qJC+1098J($M_AC@_C5813160K;@|3!Petroff, P. M. //Denbaars, S. P. !Q=w 9Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/931069Q=w kMBE Kand MOCVD Growth and Properties of Self-Assembling Quantum-Dot Arrays in III-V Semiconductor StructureskQ=w 07.4.2Q=w  !SuperKlattices and Microstructures!Q=w  Article$M_ܰ@_ t1994$M_ܰ@_ t15$M_ܰ@_ Lj.=U=?T9Bowers, J. E. //Morton, P. A. //Mar, A. //Corzine, S. W. 9=0Vqx^X5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5=0VLqx^X)Actively Mode-Locked Semiconductor-Lasers)=0Vqx^X10.5.1=0Vqx^X #IEEE Journal of Quantum Electronics#=0Vqx^X #IEEE Journal of Quantum Electronics#N~N~ N91330H=0jq  US4855249 H=0jq JPH=0jq 8/8/1989H=0jq #JP04N015200B4 JP62119196A2 US4855249#H=0jq YUS3922475 US4062706 US4120706 US4144116 US4147571 US4177321 US4554030 US4561916 US4614961YH=0jq N"G. D. O'Clock, Jr. et al. ""Acoustic Surface Wave Properties . . . of Aluminum Nitride . . . "", J. Electrochem. Soc., vol. 81, 1975, pp. 55-56.; Mizuta et al., ""Low Temperatures Growth of GNaN and AlN on GaAs . . . "", Jap. J. Appl. Phys., vol. 25, No. 12, Dec. 1986, pp. L945-L948.; Matloubian et al., ""MOCVD Epitaxial Growth of Single Crystal GaN, A,N and Al.sub.x Ga.sub.1-x N"", J. of NElect. Mat., vol. 14, No. 5, 1985, pp. 633-644.; Morita et al., ""Epitaxial Growth of Aluminum Nitride on Sapphire . . . "", Jap. J. Appl. Phys., vol. 20, No. 1, Jan. 1981, pp. 17-23.; Khan et al., ""O;1?3VSchmidt, K. H. //Medeirosribeiro, G. //Oestreich, M. //Petroff, P. M. //Dohler, G. H. V=|vPUniv Calif Santa Barbara,Ctr Quantized Elect StructO,Santa ; Univ Calif Santa Barbara,Dept Mat,Santa Barbara,Ca 93106 ; Univ Erlangen Nurnberg,Inst Tech Phys 1,D-91058=|vPOCarrier Relaxation and Electronic StructuOre in InAs Self-Assembled Quantum DotsO=|vP03.5.4@=|vP "Physical Review B-Condensed Matter"=|vPO Article2$M_;t@_lbb2 1996 OCT 15 2$M_;t@_lbb2542$M_;t@_lbb2162$M_;t@_lbb2^N~2l1 M>@zSLook, D.C.//Walters, D.C.//Manasreh, M.O.//Sizelove, J.R.//Stutz, C.E.//Evans, K.R.S1=p:#qAnomalous Hall effect results in Low-Temperature MolecMular-Beam-Epitaxial GaAs - Hopping in a dense EL2-like Bandq1=p:#01.5.3 Metastable Centers: EL21=p:# "Physical Review B-CondensMed Matter"1=p:#1990$M_D@_42$M_D@_6$M_D@_ 3578-3581M $M_D@_%?\\As01mesant\Procite Databases\WCS\Articles\Look DC 1990 08.pdf?$M_D@_' 0163-1829 $M_D@_)ENMGLISH Wright State Univ, Res Ctr, Dayton OH, 45435 Wright Res & Dev Ctr, Elra, Electr Technol Lab, Wright Patterson AFB, OH, 45433 Universal Energy Syst, Dayton OH, 45432 DV682 Copyright 2003 SciSearcMh Plus $M_D@_$M_D@_$M_D@_$M_D@_$M_D@_M$M_D@_$M_D@_$M_D@_ $M_D@_ $M_D@_$Nߊ(=u=?pAkasaki, .I.Sawaki, Nobuhiko H=0jq H=0jq H=0jq RProcess for growing III-V compounNd semiconductors on sapphire using a buffer layerRH=0jq 07.5H=0jq Nagoya UniversityH=0jq 3ub.1-x N"", J. of p^N~ MM_D@_$M_D@_$M_D@_$M_D@_$M_D@_$M_DM@_$M_D@_$M_D@_$M_D@_ $M_D@_$M_D@_M $M_D@_ $M_D@_$M_D@_+$M_D@_+198$M_D@_M 64890Nߊ(=@pAkasaki, .I.Sawaki, Nobuhiko H=0jq H=0jq H=0jq RProcess for growing III-V compounNd semiconductors on sapphire using a buffer layerRH=0jq 07.5H=0jq Nagoya UniversityH=0jq 3O;1?3VSchmidt, K. H. //Medeirosribeiro, G. //Oestreich, M. //Petroff, P. M. //Dohler, G. H. V=|vPUniv Calif Santa Barbara,Ctr Quantized Elect StructO,Santa ; Univ Calif Santa Barbara,Dept Mat,Santa Barbara,Ca 93106 ; Univ Erlangen Nurnberg,Inst Tech Phys 1,D-91058=|vPOCarrier Relaxation and Electronic StructuOre in InAs Self-Assembled Quantum DotsO=|vP03.5.4@=|vP "Physical Review B-Condensed Matter"=|vPO Article2$M_;t@_lbb2 1996 OCT 15 2$M_;t@_lbb2542$M_;t@_lbb2162$M_;t@_lbb2M_;t@_lbb2162$M_;t@_lbb2u5e~ ? NProperties and Ion Implanted Al.sub.x Ga.sub.l-x N Epitaxial Single Crystal Films . . . "", Appl. Phys. Lett., vol. 43, 1983, pp. 492-495."H=0jq "US5029320 US5159N413 US5164359 US5205905 US5218216 US5239188 US5247533 US5270247 US5272108 US5278433 US5281830 US5290393 US5296395 US5356831 US5369289 US5387804 US5389571 US5587014 US5633192 US5677538 US5686738 US5716N 450 US5725674 US5733796 US5739554 US5770887 US5814533 US5847397 US5863811 US5905276 US5985687 US6083812 US6086673 US6120600 US6121153 US6123768 US6249012 US6266355 US6362017 US6392257 US6410941 USRE36N 747H=0jq %;\\As01mesant\Procite Databases\WCS\Patents\US04855249__.pdf;H=0jq '"H01L 21/205, H01L 21/20"H=0jN Eq +42H=0jq 63600O;@3VSchmidt, K. H. //Medeirosribeiro, G. //Oestreich, M. //Petroff, P. M. //Dohler, G. H. V=|vPUniv Calif Santa Barbara,Ctr Quantized Elect StructO,Santa ; Univ Calif Santa Barbara,Dept Mat,Santa Barbara,Ca 93106 ; Univ Erlangen Nurnberg,Inst Tech Phys 1,D-91058=|vPOCarrier Relaxation and Electronic StructuOre in InAs Self-Assembled Quantum DotsO=|vP03.5.4@=|vP "Physical Review B-Condensed Matter"=|vPO Article2$M_;t@_lbb2 1996 OCT 15 2$M_;t@_lbb2542$M_;t@_lbb2162$M_;t@_lbb2O 11346-11353 2$M_;t@_lbb2%B\\As01mesant\Procite Databases\WCS\Articles\Schmidt KH 1996 10.pdfB2$M_;t@_lbb2*+We studied the electronic structur ;kN~ t1Oe and relaxation processes in InAs quantum dots embedded in GaAs. Using capacitance measurements along with photoluminescence spectroscopy, we estimate the energy splitting between the ground and firsOt excited quantum-dot state in the conduction and valence band, respectively. There are five quantum-dot transitions observable in our photoluminescence (Pi) spectra, which we attribute to allowed traOnsitions between electron and hole states of the same quantum number. phonon-related relaxation processes were studied combining FL, resonant PL (RPL), and photoluminescence excitation (PLE) experimenOts. In the RPL as well as in the PLE spectra. we observed enhanced signals at twice the phonon energies available in the system. Therefore, a maximum in the intensity of the PLE and RPL signal does noO t necessarily occur when most of the dots are pumped resonantly into an excited state. The main criterion, however, seems to be that the energy distance between the pumped levels and the levels below O matches a multiple of the available phonon energies. Changing the pump power in our resonant PL experiments corroborates that at least in the small carrier density regime phonon-related processes are O important for the carrier relaxation in InAs quantum dots embedded in GaAs bulk material.@=|vP@=|vP~@=|vPP;1?4fWegscheider, W. //Pfeiffer, L. N. //Dignam, M. M. //Pinczuk, A. //West, K. W.//Mccall S. L.//Hull, R. fz(=jrԫ$At&T Bell Labs/Murray Hill//Nj/0797P4$z(=jrԫ%Lasing From Excitons in Quantum Wires%z(=jrԫ10.2.2z(=jrԫ Physical Review Letters^N~|11Q<@MOberli, D. Y.//Wake, D. R.//Klein, M. V.//Klem, J.//Henderson, T.//Morkoc, H.MH=qNȪ_Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,CQoordinated Sci Lab/Urbana//Il/61801_H=qNȪ4Time-Resolved Raman-Scattering in GaAs Quantum-Wells4H=qNȪ03.3*HQ=qNȪ Physical Review LettersH=qNȪ Article$M_@_ 1987 Aug 10 $M_@_59Q$M_@_6$M_@_696-699$M_@_24$M_@_%A\\As01mesant\Procite DataQbases\WCS\Articles\Oberli DY 1987 08.pdfA$M_@_+157$M_@_60650Rf>h1?Thomas, D.G.//Hopfield, J.J.4= nzDX8Isoelectronic Traps due to Nitrogen in Gallium Phosphide84= nzDX01.4.4 Exc= nzDX1966$M_TR@_150$M_T@_2$M_T@_680-689= nzDX= nzDX%<\\AerRon\Procite Databases\WCS\Articles\Thomas DG 1966 10.pdf<$M_T@_' 0031-899X $M_T@_)5English A19668388300040 Copyright 2003 SciSearch PRdlus5$M_T@_+427$M_T@_64900Sf>h1?Dean, P.J.//Thomas, D.G.=tP<7Intrinsic Absorption-Edge Spectrum of Gallium Phosphide7=tP<.01.4.2 "ShallowN~ ;1 T=r>FRole of Surface Antisite Defects in the Formation of Schottky Barriers5/=r>/=r> /=rT>02.2w=r> "Physical Review B-Condensed Matter"/=r> Article$M_$1@_v 1982 Jan 15T $M_$1@_v25$M_$1@_v2$M_$1@_v 1423-1426 $M_$1@_v%@\\As01mesant\ProcTite Databases\WCS\Articles\Allen RE 1982 01.pdf,$M_$1@_v$M_$1@_v+123$M_$1@_v13450U;@4"Baranovskii, S. D. //Efros, A. L. ")=v'Af Ioffe Engn Phys Inst/Leningrad//Ussr')=v%Band Edge Smearing inU Solid-Solutions%)=v01.3.3 Electron Bandgaps)=v "Soviet Physics Semiconductors-Ussr")=vU Article$M_|l@_d|1978$M_|l@_d|12$M_|l@_d|11$M_|l@_d| 1328-1330U $M_|l@_d|%D\\As01mesant\Procite Databases\WCS\Articles/Baranoviskii SD 1978.pdf,$M_|l@_d|$M_|l@_d|+118U-$M_|l@_d|13480V;1?4GBaranovskii, S. D. //Efros, A. L. //Gelmont, B. L. //Shklovskii, B. I. G=[t|6Coulomb Gap in Disordered Systems: Computer-Simulation6| <~ V;@4GBaranovskii, S. D. //Efros, A. L. //Gelmont, B. L. //Shklovskii, B. I. G=[t|6Coulomb Gap in Disordered Systems: Computer-Simulation6V=[t|04.4.4=[t| (Journal of Physics C-Solid State Physics(=[t| ArticleM@_ VW@_VWd MMarch 28, 1979M@_ VW@_Wd M12M@_ VW@_Wd M6M@_ VW@_Wd M 1023-1034 M@_ VW@_WVd M%D\\As01mesant\Procite Databases\WCS\Articles/Baranoviskii SD 1979.pdfDh=[t|+108M@_ VW@_Wd M13490W;@4 Dolan, G. J.  X= $x$0'Bell Tel Labs Inc/Murray Hill//Nj/07974'X= $x$0)Offset Masks for Lift-Off PhotoprocessingW)X= $x$008.4.1X= $x$0 Applied Physics LettersX= $x$0 Article$M_\L@_D5W\1977$M_\L@_D5\31$M_\L@_D5\5$M_\L@_D5\337-339$M_\L@_D5\%=\\As01mWesant\Procite Databases\WCS\Articles/Dolan GJ 1977.PDF=$M_\L@_D5\+186$M_\L@_D5\13540XCTemperature-Dependence of InP and GaAs Etching in a Chlorine PlasmaC=?t^ 08.2.3=?t^  &Journal of the Electrochemical SociXCTemperature-Dependence of InP and GaAs Etching in a Chlorine PlasmaC=?t^ 08.2.3=?t^  &Journal of the Electrochemical SociE6~) [ffective mass m*, and lifetime broadening GAMMA exposed to an effective magnetic field DELTAB. Our findings are remarkably consistent with recent proposals of composite particles in the FQHE and the e[xistence of a Fermi surface at even-denominator fillings.i$M_$@_ $+186$M_$@_ $,4Electron-Gas/ Landau-Level/ States/ Hierarchy/ Fluid[14$M_$@_ $13680\;@5Dutta, N. K. //Nelson, R. J. HHB'Bell Tel Labs Inc/Murray Hill//Nj/07974'HHB3The Case for Auger Recombi\nation in In1-Xgaxasyp1-Y3HHBO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOHHB Journal of\ Applied PhysicsHHB ArticleHHBB1982HHBB53HHBB\1HHBB74-92HHBB%@\\As01mesant\Procite Databases\WCS\Articles/Dutta NK 1982 02.pdf@HHBB+\6127HHBB13720]l=p Article$M_t@_l1981$M_t@_l38$M_t@_l6$M_]l=p Article$M_t@_l1981$M_t@_l38$M_t@_l6$M_]l=p Article$M_t@_l1981$M_t@_l38$M_t@_l6$M_5e'W  X;@5=Donnelly, V. M. //Flamm, D. L. //Tu, C. W. //Ibbotson, D. E. ==?t^ 'Bell Tel Labs Inc/Murray Hill//Nj/07974'=?t^ XCTemperature-Dependence of InP and GaAs Etching in a Chlorine PlasmaC=?t^ 08.2.3=?t^  &Journal of the Electrochemical SociXety&=?t^  Article$M_<,@_$n <1982 Nov$M_<,@_$n <129$M_<,@_$n <11X$M_<,@_$n < 2533-2537 $M_<,@_$n <%C\\As01mesant\Procite Databases\WCS\Articles\Donnelly VM 1982 11.pdf,#=?t^ X\#=?t^ +111$M_<,@_$n <13590Y/<@Barker, A.S.//Sievers, A.J.h=8oBOptical studies of the vibrational properties of disordered solidsBh=8o0Y1.4.1 Point Defectsh=8o Reviews of Modern Physicsh=8o19750'$M_D"|"@_t"0-'470'$M_D"Y|"@_t"0-'S2-S640'$M_D"|"@_t"0-'%>\\As01mesant\Procite Databases\WCS\Articles/Barker AS 1975.pdf>0'$M_D"|"@_t"0-',Phonon DynamicsY*0'$M_D"|"@_t"0-'61860Z;k=?f54Drummond, T. J. //Morkoc, H. //Lee, K. //Shur, M.S. 1 =Ryv< =Ryv< =Ryv<Univ IlliWCS\Articles/Drummond TJ.pdf6$M_ğ@_9Ė+135$M_ğ@_Z9Ė13670$T"RN~ )Z;@f54Drummond, T. J. //Morkoc, H. //Lee, K. //Shur, M.S. 1 =Ryv< =Ryv< =Ryv<Univ IlliZnois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Minnesota,Dept Cent/Minneapolis//Mn/55455 =Ryv<2Model for ModulatiZon Doped Field-Effect Transistor2 =Ryv<09.1.4* =Ryv< Electron Device Letters =Ryv< ArticleZ$M_ğ@_9Ė1982$M_ğ@_9Ė3$M_ğ@_9Ė11$M_ğ@_9Ė338-341$MZ_ğ@_9Ė8$M_ğ@_9Ė%;\\As01mesant\Procite Databases\WCS\Articles/Drummond TJ.pdf;$M_ğ@_9Ė+135$M_ğZ@_9Ė13670[;[?p5IDu, R. R. //Stormer, H. L. //Tsui, D. C. //Pfeiffer, L. N. //West, K. W. I(=h u#IPrinceton Univ/Princeton//Nj/08544 ; at&T Bell Labs/Murray Hill/al Review Letters(=h u# Article$M_$@_ $ May 10, 1993 $M_$@_ $70[$M_$@_ $19$M_$@_ $ 2944-2947 $M_$@_ $%8\\Aeron\Procite Databases\WCS\Articles\Du RR 1993 05.pdf8[$M_$@_ $*iWe have determined the energy gaps of both prominent sequences of fractional quantum Hall effect (FQHE) states at filling factor nu=p/(2p +/- 1) around nu=1/2. The g3The Case for Auger Recombi3The Case for Auger RecombihTemperature-Dependence of ^AN~  $*];@5Dutta, N. K. //Nelson, R. J. l=p'Bell Tel Labs Inc/Murray Hill//Nj/07974'l=phTemperature-Dependence of ]Threshold of InGaAsp-Inp Double-Heterostructure Lasers and Auger Recombinationhl=p10.1.2l=p Applied Physics Letters]l=p Article$M_t@_l1981$M_t@_l38$M_t@_l6$M_]t@_l407-409$M_t@_l%=\\As01mesant\Procite Databases\WCS\Articles/Dutta NK 1981.PDF=$M_t@_l+106$M_]t@_l13730^;@56Ebert, G. //Vonklitzing, K. //Ploog, K. //Weimann, G. 6w=t2Tech Univ Munich,Dept Phys/D-8046 Garching//Fed Rep Ger ; Max Planck Inst Festkorpe^rforsch/D 7000 Stuttgart//Fed Rep ; Ftz,Deutsch Bundespost,Forschungsinst/D 6100w=t2hTwo-Dimensional Magneto-Quantum Transport on GaAs-AlxGa1-xAs Heterostructure^s Under Non-Ohmic Conditionshw=t202.5.2w=t2 (Journal of Physics C-Solid State Physics(w=t2_ߊ(=k=?ASchubert, E. F.//Ploog, K.//Fischer, Albrecht//Horikoshi, Yoshiji \=|q\=|q5\=|q_HSemiconductor devices with at least one monoatomic layer of doping atomsH\=|q09.1.5\=|q=Max-Planck Gesellschaft Zur FordDtN~ T  _9), Dig. of Technical Papers, pp. 388-389.; Yamaguchi et al., ""A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET),"" Japanese Journal of Applied Physics, vol. 22 (198_3), suppl. 22-1, pp. 267-270.; Arnold et al., ""High Performance Inverted and Large Current Double Interface Modulation-Doped . . .,"" 320 Applied Physics Letters, 45 (1984), Oct., No. 8, New York."_\=|q"US5013685 US5060234 US5081511 US5151758 US5216260 US5219772 US5284782 US5311045 US5329150 US5373186 US5376810 US5412231 US5442221 US5497015 US5532505 US5539222_ US5548138 US5569943 US5757025 US6100542 US6258616\=|q%;\\As01mesant\Procite Databases\WCS\Patents\US04882609__.pdf;\=|q'$"H01L_  29/80, H01L 29/225, H01L 45/0"$\=|q+21\=|q63620`;@V6@Eisenstein, J. P. //Stormer, H. L. //Pfeiffer, L. //West, K. W. @HV=qJn<$At&T Bell Labs/Murray Hill//Nj/07974$HV=qJn`<EEvidence for a Phase-Transition in the Fractional Quantum Hall-EffectEHV=qJn<02.6.2HV=qJn< Physical Review Letters`HV=qJn< Article$M_L<@_4L 1989 Mar 27x=qJn<x=qJn<x=qJ`n<62$M_L<@_4L13$M_L<@_4L 1540-1543 $M_L<@_4L%E\\As01mesant\Procite Databases\WCS\Articles\E`yisenstein JP 1989 03.pdfE$M_L<@_4L+131$M_L<@_4L13910Labs Inc/Murray Hill//Nj/07974'7=0uTW0Basic EuN~$* _ߊ(=@ASchubert, E. F.//Ploog, K.//Fischer, Albrecht//Horikoshi, Yoshiji \=|q\=|q5\=|q_HSemiconductor devices with at least one monoatomic layer of doping atomsH\=|q09.1.5\=|q=Max-Planck Gesellschaft Zur Ford_erung Der Wissenschafter E.v.=\=|q359910\=|q US4882609 \=|qDE\=_|q 11/21/1989 \=|qDE3588011C0 DE3588011T2 EP0183146A2 EP0183146A3 EP0183146B1 JP02512422B2 JP61166081A2 US4882609 US5060234 US5216260 US5329150 US5_373186\=|q'US4163237 US4205329 US4410902 US4591889'\=|q"Wood et al, ""Complex Free-Carrier Profile Synthesis by Atomic-Pla_ne Dopingf MBE GaAs"", J. Applied Physics, vol. 51 (1/80), pp. 383-387.; Wood et al., ""Hyper-Thin Channel MBE GaAs Power FETs by Single Atomic Plane Doping,"" IEEE Int. Electron Devices Meeting (12/7`<EEvidence for a Phase-Transition in the Fractional Quantum Hall-EffectEHV=qJn<02.6.2HV=qJn< Physical Review Letters`HV=qJn< Article$M_L<@_4L 1989 Mar 27x=qJn<x=qJn<x=qJ`n<62$M_L<@_4L13$M_L<@_4L 1540-1543 $M_L<@_4L%@\\Aeron\Procite Databases\WCS\Articles\Eisens`ttein JP 1989 03.pdf@$M_L<@_4L+131$M_L<@_4L13910Basic ^N~ 7  a;@61Flamm, D. L. //Donnelly, V. M. //Ibbotson, D. E. 17=0uTW'Bell Tel Labs Inc/Murray Hill//Nj/07974'7=0uTW0Basic aChemistry and Mechanisms of Plasma-Etching07=0uTW08.2.37=0uTW (Journal of Vacuum Science & Technology B(7=a0uTW ArticleU$M_^`@_|`U1982U$M_^`@_|`U1U$M_^`@_|`U1U$M_^`@_|`Ua23-30U$M_^`@_|`U%=\\As01mesant\Procite Databases\WCS\Articles/Flamm DL 1982.pdf=U$M_^`@_|`U+123U$M_^`@_|`Ua13980b;@6?Geis, M. W. //Lincoln, G. A. //Efremow, N. //Piacentini, W. J. ? ==rȒ#Mit,Lincoln Lab/Lexington//Ma/02173# ==rȒb)A Novel Anisotropic Dry Etching Technique) ==rȒ08.2.2 ==rȒ &Journal of Vacuum Science & Technology& =b=rȒ Article#$M_4,$.@_.(/4#1981#$M_4,$.@_.(/4#19#$M_4,$.@_.(/4#4#$M_4,$.@_.(/4#b 1390-1393 #$M_4,$.@_.(/4#%<\\As01mesant\Procite Databases\WCS\Articles/Geis MW 1981.pdf< :==rȒ+115#$M_4,$.@_.(/4b #14030cj.=1?fKuech, T. F. //Wolford, D. J. //Veuhoff, E. //Deline, V. //Mooney, P. M. //Potemski, R. //Bradley, J. f]="u2V7Ibm Corp,Thomas J Watson Res Ctr/Yo.^N~ $ cj.=@fKuech, T. F. //Wolford, D. J. //Veuhoff, E. //Deline, V. //Mooney, P. M. //Potemski, R. //Bradley, J. f]="u2V7Ibm Corp,Thomas J Watson Res Ctr/Yocrktown Hts//Ny/105987]="u2VuProperties of High-Purity AlxGa1-xAs Grown by the Metal-Organic Vapor-Phase-Epitaxy Technique Using Methyl Precursorsu]c="u2V06.4.3="u2V Journal of Applied Physics]="u2V Article\$M_e|g@_tg\ 1987 Jul c15 \$M_e|g@_tg\62\$M_e|g@_tg\2\$M_e|g@_tg\632-643\$M_e|g@_tg\%@\\As01mesant\Proccite Databases\WCS\Articles\Kuech TF 1987 07.pdf@\$M_e|g@_tg\+102\$M_e|g@_tg\6050dߊ(=Ӯ1?fIshii, Kazuaki//Futatsugi, Toshiro//Oshima, Toshio//Fujii, Toshio//Yokoyama, Naoki//Shibatomi, Akihirof=Xu|7NMethod of forming a high temperaturited=Xu|7211480d=Xu|7 US4889831 =Xu|7JP=Xu|7 12/26/1989 =Xu|7JP63276267dA2 US4889831=Xu|7US3984261 US4075651 US4075652 US4366493 US4410903 US4468851 US4471367 US4498093 US4568958 US4625225 US4632713 US4662058 US4672414 US4729000 US474d5082 US4745447 US4764796 US4794444 US4801984 US4805005 US4825265=Xu|7`"Ishibashi, ""InP MOSFET with In.sub.0.53 Ga.sub.0.47 As/InP Heterostructure Contacts"", El^N~ 1dߊ(=@fIshii, Kazuaki//Futatsugi, Toshiro//Oshima, Toshio//Fujii, Toshio//Yokoyama, Naoki//Shibatomi, Akihirof=Xu|7NMethod of forming a high temperaturde stable ohmic contact to a III-V substrateN=Xu|708.3=Xu|7Fujitsu Limited=Xu|7211480d=Xu|7 US4889831 =Xu|7JP=Xu|7 12/26/1989 =Xu|7JP63276267dA2 US4889831=Xu|7US3984261 US4075651 US4075652 US4366493 US4410903 US4468851 US4471367 US4498093 US4568958 US4625225 US4632713 US4662058 US4672414 US4729000 US474d5082 US4745447 US4764796 US4794444 US4801984 US4805005 US4825265=Xu|7`"Ishibashi, ""InP MOSFET with In.sub.0.53 Ga.sub.0.47 As/InP Heterostructure Contacts"", Eldectronics Letters, Mar. 19, 1981, vol. 17, No. 6, pp. 215-216.; Wang et al., ""A 0.1 .mu.m Gate Al.sub.0.5 In.sub.0.5 As/Ga.sub.0.5 In.sub.0.5 As MODFET Fabricated on GaAs Substrates"", IEEE Trans. ond Electron Devices, vol. 35, No. 7, Jul. 1988, pp. 818-823.; Ohno et al, ""Double Heterostructure Ga.sub.0.47 In.sub.0.53 As MESFETs by MBE"", IEEE Electron Device Letters, vol. EDL-1, No. 8, Aug. 1980e;=?67Hall, K. L. //Mark, J. //Ippen, E. P. //Eisenstein, G. 7(=u[Mit,Dept Elect Engn & Comp Sci/Cambridge//Ma/02139 ; Mit,Electr Res Lab/Cambridge/e/Ma/02139[(=u7Femtosecond Gain Dynamics in InGaAsp Optical Amplifiers7(=u10.2.5(=u A^N~14 e;@67Hall, K. L. //Mark, J. //Ippen, E. P. //Eisenstein, G. 7(=u[Mit,Dept Elect Engn & Comp Sci/Cambridge//Ma/02139 ; Mit,Electr Res Lab/Cambridge/e/Ma/02139[(=u7Femtosecond Gain Dynamics in InGaAsp Optical Amplifiers7(=u10.2.5(=u Aepplied Physics Letters(=u Article$M_4l@_dW4 1990 Apr 30T8=uT8=ueT8=u56$M_4l@_dW418$M_4l@_dW4 1740-1742 $M_4l@_dW4%?\\As01mesant\eProcite Databases\WCS\Articles\Hall KL 1990 04.pdf,$M_4l@_dW4$M_4l@_dW4+119$M_4l@_dW414070fle Drops With Ballistic Phonons Heat Pulses: Phonon WindS(=x"ԫ02.4.4(=x"ԫ Physical Review Letters(=xfle Drops With Ballistic Phonons Heat Pulses: Phonon WindS(=x"ԫ02.4.4(=x"ԫ Physical Review Letters(=xfXFff\(=x"ԫ+123$M_dT@_L8Rd14090g;h1?27\\As01mesant\Procite Databases\WCS\Articles/Oliver JD 1980.pdf>{$M_@_nKGrating coupler with monolithically integrated quantum well index modulatorK=pvf05.2.7=pvf@American Telephone and Telegrnaph Company, AT&T Bell Laboratories(=pvf=pvf=pvf706518=pvfe and Telegr4dK \ d nurnal of Appl. Phys., vol. 43, No. 5, pp. 2327-2335 (1972).; Suematsu, Y., ""Dynamic Single-Mode Semiconductor Lasers with a Distributed Reflector"", J. Lightwave Tech., LT-1, 161 (198"n=pvf"US5051617 US5067828 US5101414 US5117469 US5131060 US5140149 US5140653 US5157544 US5239410 US5276748 US5321685 US5337382 US5367582 US5411895 US5416583 US5480813 US5502779 USn5515461 US5613020 US5623568 US5631472 US5907647 US6194240 US6295308=pvf%;\\As01mesant\Procite Databases\WCS\Patents\US04904045__.pdf;=pvn uf' G02B 6/34 =pvf+24=pvf63650o;@8BSchmeller, A. //Eisenstein, J. P. //Pfeiffer, L. N. //West, K. W. B8>=CrV6/At&T Bell Labs,600 Mt Ave/Murray Hill//Nj/07974/8>=oCrV6QEvidence for Skyrmions and Single Spin Flips in the Integer Quantized Hall-EffectQ8>=CrV602.5.38>=CrV6o8>=CrV6 Physical Review Letters8>=CrV6 Article$M_ܣ@_ԣH$< Dec 4, 1995 $M_ܣ@_ԣH$<o75$M_ܣ@_ԣH$<23$M_ܣ@_ԣH$< 4290-4293 $M_ܣ@_ԣH$<%C\\As01mesant\Procite Databases\WCS\Articles\Schmeller A 19o95 12.pdfC$M_ܣ@_ԣH$<*hWe have employed tilted-field magnetotransport measurements of the energy gap for the odd-integer quantized Hall states at Landau level filling faoctors nu = 1, 3, and 5 to determine the spin of thermally excited quasielectron-quasihole pairs. At nu = 1 our data show that as many as 7 electron spin Rips accompany such excitations, while at nu =  ;k~L T mBd{+109{$M_@_d{14300nߊ(=@AAlferness, Rodney C.//Koch, Thomas L.//Koren, Uziel//Zucker, J.E.>=pvf=pvf=pvfnKGrating coupler with monolithically integrated quantum well index modulatorK=pvf05.2.7=pvf@American Telephone and Telegrnaph Company, AT&T Bell Laboratories(=pvf=pvf=pvf706518=pvfn US4904045 =pvfUS; US=pvf 2/27/1990 =pvfCA1294353A1 DE68915338C0 DE68915338T2 EP0345n923A2 EP0345923A3 EP0345923B1 JP02063012A2 JP02594352B2 JP05118747A2 JP05118748A2 KR0147835B1 KR0147835Y1 US4904045 US5450297 WO9301460A1=pvfcUS3760292 US4273411 nUS4464762 US4525687 US4665528 US4704720 US4716570 US4745616 US4755015 US4775980c=pvf"Kogelnik et al., ""Coupled-Wave Theory of Distributed Feedback Lasers"", Joo;[?8BSchmeller, A. //Eisenstein, J. P. //Pfeiffer, L. N. //West, K. W. B8>=CrV6/At&T Bell Labs,600 Mt Ave/Murray Hill//Nj/07974/8>=oCrV6QEvidence for Skyrmions and Single Spin Flips in the Integer Quantized Hall-EffectQ8>=CrV602.5.38>=CrV6o8>=CrV6 Physical Review Letters8>=CrV6 Article$M_ܣ@_ԣH$< Dec 4, 1995 $M_ܣ@_ԣH$<o-$M_ܣ@_ԣH$<143408h(XT 1o3 and 5 apparently only a single spin flips. These results lend support to the recent suggestions that ''Skyrmionic'' quasiparticles are the lowest-lying charged excitations of the fully polarized nu o= 1 quantum Hall fluid but are not at the higher odd-integer fillings.h$M_ܣ@_ԣH$<+131$M_ܣ@_ԣH$<,(Magnetic-Fields/ Electron-Gas/ Resonanceo2($M_ܣ@_ԣH$<14340p;@8Shur, M. S. //Eastman, L. F. 4=uz cUniv Minnesota,Dept Elect Engn/Minneapolis//Mn/55455 ; Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853cp4=uz WBallistic Transport in Semiconductor at Low-Temperatures for Low-Power High-Speed LogicW4=uz 09.1.74=uzp  %IEEE Transactions on Electron Devices%4=uz  Article$M_9:@_:r1979$M_9:@_:r26p$M_9:@_:r11$M_9:@_:r 1677-1683 $M_9:@_:r%<\\As01mesant\Procite Databases\WCS\Articles/Shur MS 1979.pdf<+178p3$M_9:@_:r14350q;1?8HWicks, G. //Wang, W. I. //Wood, C. E. C. //Eastman, L. F. //Rathbun, L. H8=`QqxnCornell Univ,Sch Elect Engn,Dept Appl Phys/Ithaca//Ny/14853 ; Corof Applied Physics8=`Qqx Article$M_$t@_ll1981$M_$t@_lql52$M_$t@_ll9$M_$t@_ll 5792-5796 $M_$t@_ll%7\\Aeron\Procite Databases\WCS\Articles/Wicks G 1983c(X/| t ""GaN Blue Light Emitting Diodes Prepared by Metalorganic Chemical Vapor Deposition"" from Journal of Applied Physics, vol. 56, 1984, pp. 2367-2368.; ""X-Ray Diffraction Topography and Crystal Charactterization of GaN Epitaxial Layers for Light-Emitting Diodes"" from Journal of Electrochemical Society, vol. 125, No. 12, 1978, pp. 2076-2078."=HoB%"?US5173336 USt 5183510 US5205905 US5239188 US5247533 US5278433 US5281830 US5284519 US5290393 US5369289 US5389571 US5544618 US5633192 US5677538 US5686738 US5725674 US5733796 US5739554 US5770887 US5827370 US5847397 USt 5905276 US5916369 US5993542 US6093253 US6120600 US6123768 US6249012 US6284395 US6362017 US6398873 USRE36747?=HoB%%;\\As01mesant\Procite Databases\WCS\Patents\US04911t 102__.pdf;=HoB%' C23C 16/0 =HoB%+32=HoB%63660u;@8NJewell, J. L. //Scherer, A. //Mccall, S. L. //Gossard, A. C. //English, J. H. Nز=At<lAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hiull//Nj/07974 ; Bell Commun Res/Red Bank//Nj/07701lز=At<*GaAs-AlAs Monolithic Microresonator Arrays*ز=At<11.2.2/vj.=1? GMarzin, J. Y. //Gerard, J. M. //Izrael, A. //Barrier, D. //Bastard, G. G?=ttiFrance Telecom,Ctr Natl Etud Telecommun Pab,Lab ; Ecole Normale Svuper,Phys Matiere Condensee Lab/F-75231i?=ttWPhotoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsW?=tt?=tt Physical Review Letters?=tt ArticleR$M_[]@_]<R Aug 1, 1994 R3cN~1| r, 3013-3016 $M_@_,%=\\As01mesant\Procite Databases\WCS\Articles\Ye PD 1995 04.pdf=$M_@_,+128$M_@_r,,TMagnetoresistance Oscillations/ Gas/ Magnetotransport/ Modulation/ Transport/ SystemT$M_@_,14510s;@89Englert, T. //Tsui, D. C. //Gossard, A. C. //Uihlein, C. 9=qg@bMax Planck Inst Festkorperforsch,Hochfeld Magnetlabor/F- ; Bell Tel Labs Inc/Mursray Hill//Nj/07974b=qg@JG-Factor Enhancement in the 2d Electron-Gas in GaAs/AlGaAs HeterojunctionsJ=qg@02.5.1s=qg@ Surface Science=qg@ Article9@_99@_9R919829@_99@_9R91139s@_99@_9R91-39@_99@_9R9295-3009@_99@_9R9%>\\As01mesant\Procite Databases\WCS\Articles/Englert T 1981.pdf,9sy@_99@_9R99@_99@_9R9+1099@_99@_9R914540th1?6Nelson, D.F.//Cuthbert, J.D.//Dean, P.J.//Thomas, D.G.^=tPX^=tPX^=tPXw^=tPX^=tPX*^=tPXXAuger Recombination of Excitons Bound to Neutral Donors in Gallium PHosphide and SiliconXw^=tPXO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO^=tPX Physical Review Letters^Aq1~,* wf>@6Nelson, D.F.//Cuthbert, J.D.//Dean, P.J.//Thomas, D.G.^=tPX^=tPX^=tPXw^=tPX^=tPX*^=tPXXAuger Recombination of Excitons Bound to Neutral Donors in Gallium PHosphide and SiliconXw^=tPXO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO^=tPX Physical Review Letters^w=tPXAMERICAN PHYSICAL SOCh $M_q s @_s rKh 1966h $M_q s @_s rKh 17h $M_q s @_s rKh 25h $Mw_q s @_s rKh  1262-1265=tPX=tPX%?\\As01mesant\Procite Databases\WCS\Articles\Dean PJ 1966 12.pdf?h $M_q ws @_s rKh ' 0031-9007 h $M_q s @_s rKh )5English A19668622200010 Copyright 2003 SciSearch Plus5h $M_q s @_s rKh +124h $M_q s w@_s rKh 64920x2.6.15=(s5=(s Hitachi, Ltd. 5=(s2528655=(s US4961197x2.6.15=(s5=(s Hitachi, Ltd. 5=(s2528655=(s US496119742043 US5065404 US5081634 US5107514 US5157544 US5161166 US5189679 US5189680 US5238867 US5404371 US5406574 US5416790 US5506170 US5519362 US5553090 US5608752 US5770471 US5850411S5608752 US5770471 US5850411zN~2 1xߊ(=@CTanaka, Toshiaki//Kajimura, Takashi//Kawano, Toshihiro//Ono, YuichiC5=(sSemiconductor laser device5=(s1x2.6.15=(s5=(s Hitachi, Ltd. 5=(s2528655=(s US4961197x 5=(sJP5=(s 10/2/1990 5=(sDE68926986C0 DE68926986T2 EP0358842A2 EP0358842A3 EP0358842Bx1 JP02072688A2 JP02078290A2 JP02109387A2 JP02228087A2 JP02723921B2 JP02723924B2 JP02912624B2 JP03094490A2 US49611975=(sUS4740976 US48457245x=(s"Appl. Phys. Lett., 45(8), Oct. 15, 1984, pp. 836-837.; IECE Technical Report on Optical and Quantum Electronics, OQE, 88-5, pp. 33-38."5=(s"+xUS5018158 US5020067 US5042043 US5065404 US5081634 US5107514 US5157544 US5161166 US5189679 US5189680 US5238867 US5404371 US5406574 US5416790 US5506170 US5519362 US5553090 US5608752 US5770471 US5850411x US5894491 US6055255 US6072817 US6081541 US6141364 US6160829 US6240114 US6285694 US6396861 USRE36802+5=(s%;\\As01mesant\Procite Databases\WCS\Patents\US04961197__.pyNew Semiconductor Superlatticeأ=PsD$004.2.0أ=PsD$0 Applied Physics Lettersأ=PsD$0 Articley~$M_\L@_D,\~1977~$M_\L@_D,\~30~$M_\L@_D,\~12~$M_\L@_D,\~651-653~$M_\egmuller A 1977.pdf;x=pv +135$M_Կ@_Զ14630^N~{ 1|@_v"9$M_@_v" 1379-1382 $M_@_v"%?\\As01mesant\Procite Databases\WCS\Articles\Suen YW 1992 03.pdf?$M_|@_v"*We report the observation, for the first time, of a fractional quantum Hall state at nu = 1/2 Landau-level filling in a low disorder, double-layer electron system realized in| a 680-angstrom-wide GaAs/AlGaAs single quantum well. A nearly vanishing diagonal resistance and a Hall resistance quantized at 2h/e2 to within 0.3% are observed at congruent-to 15 T and congruent-to |26 mK. The activated temperature dependence of the diagonal resistance minimum yields a quasiparticle excitation energy gap of 230 mK.$M_@_v"+181$M_|@_v",5Magnetic-Field/ Well/ Destruction/ Collapse/ Energies5$M_@_v"14640};@:9*Tuttle, G. //Kroemer, H. //English, J. H. *\= w%ԫ5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5\= w%ԫ}Effects of Interface Layer Sequencing on the Transport-Properties of InAs/Alsb Quantum-Wells: Evidence for Antisite Donors at the InAs/Alsb Interfaceg\= w%ԫ}\= w%ԫ+\= w%ԫ02.3.2\= w%ԫ Journal of Applied Physics\= w%ԫ Article}`$M_ik@_k_` 1990 Mar 15= w%ԫ= w%ԫ67`$M_ik@_k_`6`$M_ik~;[?D9*Tuttle, G. //Kroemer, H. //English, J. H. *]/=H>vpHԫ5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5]/=H>vpHԫEuN~1 {p<@* !Foresi, J. S. //Moustakas, T. D. !(=Jq*ȒOBoston Univ,Dept Elect Comp & Syst Engn,Molec Beam Epitaxy Lab/Boston//Ma/02215O(={Jq*Ȓ!Metal Contacts to Gallium Nitride!(=Jq*Ȓ08.3.2(=Jq*Ȓ Applied Physics Letters(=Jq*{Ȓ Article $M_@_XT  May 31, 1993 $M_@_XT  62 $M_@_XT 22 $M_@_XT{  2859-2861 $M_@_XT %A\\As01mesant\Procite Databases\WCS\Articles/Foresi JS 1993 03.pdfA*ZWe report measurements on the nature of aluminum and gold contacts to G{aN. The GaN films were deposited onto the R-plane of sapphire substrates by molecular beam epitaxy and are autodoped n-type. Metal contacts were deposited by evaporation and were patterned photolithog{raphically. Current-voltage characterization shows that the as-deposited aluminum contacts are ohmic while the as-deposited gold contacts are rectifying. The gold contacts become ohmic after annealing{ at 575-degrees-C, a result attributed to gold diffusion. The specific contact resistivity of the ohmic aluminum and gold contacts were found by transfer length measurements to be of device quality (1|;[?09HSuen, Y. W. //Engel, L. W. //Santos, M. B. //Shayegan, M. //Tsui, D. C. H= u)2Princeton Univ,Dept Elect Engn/Princeton//Nj/085442|= u)WObservation of a Nu=1/2 Fractional Quantum Hall State in a Double-Layer Electron-SystemW= u)02.6.2= u) Landau-level filling in a low disorder, double-layer electron system realized in a 68\= w%ԫ Article^N~y { at 575-degrees-C, a result attributed to gold diffusion. The specific contact resistivity of the ohmic aluminum and gold contacts were found by transfer length measurements to be of device quality (1{0(-7)-10(-8) OMEGA m2). The results of these studies suggest a direct correlation between barrier height and work function of the metal, consistent with the strong ionic character of GaN.Z {S$M_@_XT +144 $M_@_XT 3370|;@09HSuen, Y. W. //Engel, L. W. //Santos, M. B. //Shayegan, M. //Tsui, D. C. H= u)2Princeton Univ,Dept Elect Engn/Princeton//Nj/085442|= u)WObservation of a Nu=1/2 Fractional Quantum Hall State in a Double-Layer Electron-SystemW= u)02.6.2= u)| Physical Review Letters= u) Article$M_@_v" Mar 2, 1992 $M_@_v"68$M_|@_v"9$M_@_v" 1379-1382 $M_@_v"%?\\As01mesant\Procite Databases\WCS\Articles\Suen YW 1992 03.pdf?$M_};[?:9*Tuttle, G. //Kroemer, H. //English, J. H. *\= w%ԫ5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5\= w%ԫ}Effects of Interface Layer Sequencing on the Transport-Properties of InAs/Alsb Quantum-Wells: Evidence for Antisite Donors at the InAs/Alsb Interfaceg\= w%ԫ}\= w%ԫ+\= w%ԫ02.3.2\= w%ԫ Journal of Applied Physics\= w%ԫ Articlek_`6`$M_ikIy 1)~]/=H>vpHԫ Article$M_ @_ f; 1989 Jun 15X=H>vpHԫX=H>vpHԫ65$M_ ~@_ f;12$M_ @_ f; 5239-5242 $M_ @_ f;%@\\As01mesant\Procite Databases\WCS\Articles\Tuttle G 1989 06.pdf@X~M=H>vpHԫ+117$M_ @_ f;14660;@l98Fafard, S. //Leonard, D. //Merz, J. L. //Petroff, P. M. 8(~=h*vnPUniv Calif Santa Barbara,Ctr Quantized Electr Struct/Santa ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106 ; Univ Calif Santa Barbara,Dept Ece/Santa Barbara//Ca/93106(~=h*vnPjSelective Excitation of the Photoluminescence and the Energy-Levels of Ultrasmall InGaAs/GaAs Quantum Dotsj(~=h*vnP03.5.1F=h*vnP Applied Physics Letters(~=h*vnPf>h1?%Dean, P.J.//Frosch, C.J.//Henry, C.H.%=tjNOptical Properties of Group 4 Elements Carbon and Silicon in Gallium PhosphideN=tj,01.4.3 "Deep" Localized-Wave-Function Levels,=tj Journal of Applied Physics=tjAmer Inst Physics=tj=tj1968$M_dT@_LRd39$M_dT@_LRd12$M_dT@_LRd 5631-5646 $M_dT@_LRd%7\\Aeron\Procite Databases\WCS\Articles/Dean PJ 1968.pdf'=tj=tj' Cs ;@9BFasol, G. //Mestres, N. //Hughes, H. P. //Fischer, A. //Ploog, K. B/=r28Max Planck Inst Met Res/D-7000 Stuttgart 80//Fed Rep Ger8/=r2Raman-Scattering by Coupled-Layer Plasmons and In-Plane Two-Dimensional Single-Particle Excitations in Multi-Quantum-Well Structures0/=r2/=r2Q/=r204.1.2/=r2 Physical Review Letters/=r2 Article$M_d@_3D 1986 JUN 9 $M_d@_3D56$M_d@_3D23$M_d@_3D 2517-2520 $M_d@_3D%?\\As01mesant\Procite Databases\WCS\Articles\Fasol G 1986 06.pdf?$M_d@_3D+128$M_d@_3D14760s Quantum WellsY=}uJ04.2.3=}uJ "Physical Review B-Condensed Matter"=}uJ Articles Quantum WellsY=}uJ04.2.3=}uJ "Physical Review B-Condensed Matter"=}uJ Articles Quantum WellsY=}uJ04.2.3=}uJ "Physical Review B-Condensed Matter"=}uJ Article;1?9!Feenstra, R. M. //Martensson, P. !=q2$7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=q2$ZFermi-NN~1 l@_dB|y4y$M_|l@_dB|y903-907y$M_|l@_dB|y%?\\As01mesant\Procite Databases\WCS\Articles/Farrell HH 1990.pdf?y$M_|Ml@_dB|y+178y$M_|l@_dB|y14740p<@4 %Yoshida, S. //Misawa, S. //Gonda, S. %=z(Electrotech Lab/Sakura/Ibaraki 305/Japan(=zImprovements on the Electrical and Luminescent Properties of Reactive Molecular-Beam Epitaxially Grown GaN Films by Using AlN-Coated Sapphire Substrates=z07.5.3=z Applied Physics Letters=z Article$M_BD@_ D1983$M_BD@_ D 42$M_BD@_ D5$M_BD@_ D427-429$M_BD@_ D%A\\As01mesant\Procite Databases\WCS\Articles/Yoshida S 1983 03.pdfA)JThe pages do not correspond with journal (volume, issue, date, and title).J$M_BD@_ D+139$M_BD@_ D3380/=r2Q/=r204.1.2/=r2 Physical Review Letters/=r2 Articl/=r2Q/=r204.1.2/=r2 Physical Review Letters/=r2 Articl/=r2Q/=r204.1.2/=r2 Physical Review Letters/=r2 Articl Article%s3 1;@94Fasol, G. //Tanaka, M. //Sakaki, H. //Horikoshi, Y. 4=}uJUniv Tokyo,Inst Ind Sci,Minato Ku/Tokyo 106//Japan ; Inst Phys & Chem Res,Frontier Res Programme/Wako/Saitama ; Nippon Telegraph & Tel Publ Corp,Musashino Elect Commun=}uJYInterface Roughness and the Dispersion of Confined LO Phonons in GaAs/AlAs Quantum WellsY=}uJ04.2.3=}uJ "Physical Review B-Condensed Matter"=}uJ Article$M_,@_, 1988 Sep 15 $M_,@_,38$M_,@_,9$M_,@_, 6056-6065 $M_,@_,%?\\As01mesant\Procite Databases\WCS\Articles\Fasol G 1988 09.pdf?$M_,@_,+104$M_,@_,147702$ Physical Review Letters=q2$ Article$M_<@_4! 1988 Jul 25 $M_<@_4!61$2$ Physical Review Letters=q2$ Article$M_<@_4! 1988 Jul 25 $M_<@_4!61$2$ Physical Review Letters=q2$ Article$M_<@_4! 1988 Jul 25 $M_<@_4!61$=nrI06.2.2>=nrI (Journal of Vacuum Science & Technology B(>=nrI Articlee$M_=nrI+167e$M_:Kavanagh, K. L. //Capano, M. A. //Hobbs, L. W. //Barbour, J. C. //Maree, P. M. J. //Schaff, W. //Mayer, J. W. //Pettit, G.D. //Woodall, J. M. //Stroscio, J. A. //Feenstra, R. M. xO=o0O=o08O=o0Mit/Cambridge//Ma/02139 ; Sandia Natl Labs/Albuquerque//Nm/87185 ; Cornell Univ/Ithaca//Ny/14853 ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598O=o0gAsymmetries in Dislocation Densities, Surface-Morphology, and Strain of GaInAs/GaAs Single HeterolayersgO=o007.2.2O=o0 Journal of Applied PhysicsO=o0 Article$M_d T@_Ld 1988 Nov 15 $M_d T@_Ld64$M_d T@_Ld10$M_d T@_Ld 4843-4852 $M_d T@_Ld%C\\As01mesant\Procite Databases\WCS\Articles\Kavanagh KL 1988 11.pdf,$M_d T@_LdV$M_d T@_Ld+153$M_d T@_Ld14910=wo,$ US5001534 =wo,$US=wo,$ 3/19/1991 =wo,$EEP0408252A2 EP0408252A3 JP0305=wo,$ US5001534 =wo,$US=wo,$ 3/19/1991 =wo,$EEP0408252A2 EP0408252A3 JP0305=wo,$ US5001534 =wo,$US=wo,$ 3/19/1991 =wo,$EEP0408252A2 EP0408252A3 JP0305LN~ ߊ(=@+Lunardi, Leda M.//Malik, R. J.//Ryan, R. W.=wo,$=wo,$=wo,$!Heterojunction bipolar transistor!=wo,$09.2.2=wo,$At&T Bell Laboratories=wo,$706518=wo,$ US5001534 =wo,$US=wo,$ 3/19/1991 =wo,$EEP0408252A2 EP0408252A3 JP03053563A2 JP06042492B4 US5001534 US5106766E=wo,$'US4179308 US4794440 US4825265 US4829343'=wo,$"Woodall et al., Appl. Phys. Lett., vol. 30, No. 9, May 1, 1977, pp. 492-493, ""An Isothermal . . . Cells"".; James et al, Appl. Phys. Lett., vol. 26, No. 8, Apr. 15, 1975, ""GaAs Concentrator Solar Cells"", pp. 467-470.; ""Dramatic Enhancement in the Gain of a"=wo,$"US5066926 US5105250 US5208184 US5250448 US5266818 US5283448 US5288660 US5321302 US5329151 US5331186 US5378922 US5477066 US5525817 US5665614 US5729033 US5814843 US5840612 US5907165 US6057567 US6368929=wo,$%;\\As01mesant\Procite Databases\WCS\Patents\US05001534__.pdf;=wo,$'"H01L 29/70, H01L 29/205"=wo,$+20=wo,$63700;1?R:5Leon, R. //Petroff, P. M. //Leonard, D. //Fafard, S. 5h=0sdUniv Calif Santa Barbara,Ctr Quantized Electr Struct/Santa ; Univ Calif Santa Barba6A5206$M_@_6A 1966trowth/ Gaas/ Inxga1-Xas/ Ingaas Thickness/ Gaas(100)/ Films/ InasZ$M_@_6A14930NN~ 1;@R:5Leon, R. //Petroff, P. M. //Leonard, D. //Fafard, S. 5h=0sdUniv Calif Santa Barbara,Ctr Quantized Electr Struct/Santa ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106 ; Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santah=0sdTSpatially-Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum DotsTh=0sd03.5.1h=0sdh=0sd Scienceh=0sd Article$M_@_6A Mar 31, 1995 $M_@_6A267$M_@_6A5206$M_@_6A 1966-1968 $M_@_6A%>\\As01mesant\Procite Databases\WCS\Articles\Leon R 1995 03.pdf>$M_@_6A*Ensembles of defect-free lnAlAs islands of ultrasmall dimensions embedded in AlGaAs have been grown by molecular beam epitaxy. Cathodoluminescence was used to directly image the spatial distribution of the quantum dots by mapping their luminescence and to spectrally resolve very sharp peaks from small groups of dots, thus providing experimental verification for the discrete density of states in a zero-dimensional quantum structure. Visible l(=1?4Tokunaga, Hiroyuki//Yamagata, Kenji//Yonehara, Takao4G=Xu9OProcess for producing compound semiconductor using an amorphous nucleation siteOG=Xu906.5G=Xu9Canon Kabushiki KaishaG=Xu987490G=Xu9 US5"?US5176557 US5201681 US5219769 US5236546 US5239190 US5276345 US5369290 US5371037 US5374329 US5422302 US5439843 US54398^N~21194 US4587717 US4657603 US4670088G=Xu9"Chen et al., ""Embedded Epitaxial Growth of . . . Lasers"", Appl. Phys. Lett., 38(5), Mar. 1, 1981.; ""Structure of Cadmium Layers Vapour-Deposited on Muscovite"", P. Dobbert et al., Kristall und Technik, vol. 8, No. 7, 1973, 853-857 (Original and Translation).; ""Single-Crystal Films of Silicon on Insulators"", Filby, J. D. et al., Brit. J. Appl. Phys. 18,1357-82 (1967).; ""Non-Planar VPE Growth of Low-Threshold (<60 MA) Current 1.3 .mu.m CW Lasers"", Olsen G. H. et al., IEDM Techn. Digest pp. 798-800 (Dec. 1982).; ""Nitrogen as Shallow Acception in ZnSe Grown by Organometallic Chemical Vapor Deposition"", Stutius W., Appl. Phys. Letters 40(3):246-248 (1982).; ""Formation of Silicon-Single Crystal Film"", Patent Abst. of Japan 8 (172):C-237 (1984)."G=Xu9"?US5176557 US5201681 US5219769 US5236546 US5239190 US5276345 US5369290 US5371037 US5374329 US5422302 US5439843 US54398 43 US5447117 US5602057 US5610094 US5620924 US5633192 US5686738 US5725674 US5750000 US5818076 US5872415 US5907768 US5962871 US6037610 US6090646 US6121076 US6123768 US6150031 US6285042 US6335541 US63372 31?G=Xu9%;\\As01mesant\Procite Databases\WCS\Patents\US05010033__.pdf;G=Xu9' H01L 21/20 G=Xu9+iv So Calif,Dept Mat Sci/Los Angeles//Ca/90089ZPC=)s:̬~RHEED Oscillation Studies of MBE Growth-Kinetics and Lattice Mismatch Strain-Induced Effects During InGaAs Growth on GaAs(100)~PC=)s:̬07.4.1PC=)s:̬ (Journal of Vacuum Science & Technology B(PC=)s:̬ Article= xxԫ "Physical .3.1= xxԫ "Physical ^N~11;@:!Martensson, P. //Feenstra, R. M. != xxԫ9Ibm Corp,Thomas J Watson Res Ctr,Div Res,Pob 218/Yorktown9= xxԫgGeometric and Electronic-Structure of Antimony on the Surface Studied by Scanning Tunneling Microscopyg= xxԫ06.3.1= xxԫ "Physical Review B-Condensed Matter"= xxԫ Article$M_@_ 1989 Apr 15= xxԫ= xxԫ39$M_@_11$M_@_ 7744-7753 $M_@_%D\\As01mesant\Procite Databases\WCS\Articles\Martensson P 1989 04.pdf,@/hH9XXF = xxԫ= xxԫ+145$M_@_14980ԫ^Local State Density and Long-Range Screening of Adsorbed Oxygen-Atoms on the GaAs(110) Surface^x(=Hxlԫ06.3.1x(=Hxlԫ Physiԫ^Local State Density and Long-Range Screening of Adsorbed Oxygen-Atoms on the GaAs(110) Surface^x(=Hxlԫ06.3.1x(=Hxlԫ PhysiJA 1987 04.pdf'@/hH9XXF(=Hxlԫ(=Hxlԫ+156$M_@_15050*Dh1?'Henry, C.H.//Dean, P.J.//Cuthbert, J.D.'r=سt[<"New Red Pair Luminescence from GaP"r=سt[<,01.4.3 "Deep" Localiz=سt[<1968$M_ԹĻ@_]԰166$M_ԹĻ@_]԰3$M_ԹĻ@_]԰754-756=سt[<=سt[<%;\\Aeron\Procite Databases\WCS\Articles\Henry CH 1968 01.pdf;$M_ԹĻ@_]԰' 0031-899X $M_ԹĻ@_]԰)5English A1968A686000021 Copyrightu 2003 SciSearch Plus5$M_ԹĻ@_]԰+192$M_ԹĻ@_]԰64940;1?T=%Ploog, K. //Fischer, A. //Kunzel, H. %=oȒ9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9=oȒl N~ 4<|Enhancement of Electron-Impact Ionization in a Super-Lattice -a New Avalanche Photo-Diode With a Large Ionization Rate Ratio|x=0p11.3.2x=0px=0p Applied Physics Lettersx=0p Article$M_ܙ@_ԙT1982$M_ܙ@_ԙT40$M_ܙ@_ԙT1$M_ܙ@_ԙT38-40$M_ܙ@_ԙT%>\\As01mesant\Procite Databases\WCS\Azrticles/Capasso F 1982.pdf>$M_ܙ@_ԙT+212$M_ܙ@_ԙT6670;@=*Schubert, E. F. //Fischer, A. //Ploog, K. *(=qa9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9(=qa3The Delta-Doped Field-Effect Transistor (Delta-Fet)3(=qa09.1.5(=qa %IEEE Transactions on Electron Devices%(=qa Article$M_@_x1986 May$M_@_x33$M_@_x5$M_@_x625-632$M_@_x%C\\As01mesant\Procite Databases\WCS\Articles/Schubert EF 1986 05.pdfC$M_@_x+127$M_כ @_x15750;/u=?=Xie, Y. H. //Gilmer, G. H. //Roland, C. //Silverman, P. J. //Buratto, S. K. //Fitzgerald, E. A. //Kortan, A. R. //Schuppler, S. //Marcus, M. A. //Citrin, P. H. ( Labs/Murray Hill//Nj/07974 ; N Carolina State Univ,Dept Phys/Raleigh//Nc/27695X(=X|1ԫPSemiconductor Surface-Roughness: Dependence on8h@p~ 2,Fundamental Studies and Device Application of Delta-Doping GaAs-Layers and in AlxGa1-xAs/GaAs Heterostructures &=`r@Ȓ&=`r@Ȓc&=`r@Ȓ06.3.3&=`r@Ȓ&=`r@Ȓ %Applied Physics a-Solids and Surfaces%&=`r@Ȓ ArticleC$M_LN@_NC1988 MarC$M_LN@_NC45C$M_LN@_NC3C$M_LN@_NC233-244C$M_LN@_NC%?\\As01mesant\Procite Databases\WCS\Articles/Plogg K 1987 11.pdf?C$M_LN@_NC+124C$M_LN@_NC15710t;@ACapasso, F. //Tsang, W. T. //Hutchinson, A. L. //Williams, G. F. Ax=0p'Bell Tel Labs Inc/Murray Hill//Nj/07974'x=0p3The Delta-Doped Field-Effect Transistor (Delta-Fet)3(=qa09.1.5(=qa %IEEE Transactions on Electron Devices%(=qa Article$M_@_x1986 May$M_@_x33$M_@_x5$M_@_x625-632$M_@_x%>\\Aeron\Procite Databases\WCS\Articles/Schubert EF 1986 05.pdf>$M_@_x+127$M_@_x15750;/u=?=Xie, Y. H. //Gilmer, G. H. //Roland, C. //Silverman, P. J. //Buratto, S. K. //Fitzgerald, E. A. //Kortan, A. R. //Schuppler, S. //Marcus, M. A. //Citrin, P. H. (~K~&,2;@=Xie, Y. H. //Gilmer, G. H. //Roland, C. //Silverman, P. J. //Buratto, S. K. //Fitzgerald, E. A. //Kortan, A. R. //Schuppler, S. //Marcus, M. A. //Citrin, P. H. (=X|1ԫXAt&T Bell Labs/Murray Hill//Nj/07974 ; N Carolina State Univ,Dept Phys/Raleigh//Nc/27695X(=X|1ԫPSemiconductor Surface-Roughness: Dependence on Sign and Magnitude of Bulk StrainP(=X|1ԫ07.4.1(=X|1ԫ Physical Review Letters(=X|1ԫ Articlew$M_TD@_<`*Tw Nov 28, 1994 w$M_TD@_<`*Tw73w$M_TD@_<`*Tw22w$M_TD@_<`*Tw 3006-3009 w$M_TD@_<`*Tw%>\\As01mesant\Procite Databases\WCS\Articles\Xie YH 1994 11.pdf,@/hH9XXF/=X|1ԫ+104w$M_TD@_<`*Tw,WMobility 2-Dimensional Electron/ Stranski-Krastanov Vicinal Si(001) Surfaces/ Ge/ GasesWw$M_TD@_<`*Tw158102Light Scattering in Solids II: Resonance Phenomena28=rHG!01.3.1 Electron Band Calculations!8=rHG Topics in Applied Physics8=rHG Review$M_@_H1982$M_@_H50$M_@_H19-178$M_@_H%:\\Aeron\Procite Databases\WCS\Articles//Cardona M 1982.pdf'$M_@_H$M_@_H+306$M_@_H6700VN~Q2L=qԫ Applied Physics LettersHf=qԫ Article$M_D4@_, D 1990 Feb 12 $M_D4@_, D56$M_D4@_, D7$M_D4@_, D659-661$M_D4@_, D%A\\As01mesant\Procite Databases\WCS\Articles\Caridi EA 1990 02.pdf,HhH9XlXFlHf=qԫ+168$M_D4@_, D6740;@>Cook, R. K. //Frey, J. =u`,Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853,=u`WTwo-Dimensional Numerical-Simulation of Energy-Transport Effects in Si and GaAs-MesfetsW=u`09.1.1=u` %IEEE Transactions on Electron Devices%=u` Article$M_đ@_-Ĉ1982$M_đ@_-Ĉ29$M_đ@_-Ĉ6$M_đ@_-Ĉ970-977$M_đ@_-Ĉ%?\\As01mesant\Procite Databases\WCS\Articles/Cook RK 1982 06.PDF?p=u`+125$M_đ@_-Ĉ16000;1?4?+Forrest, S. R. //Kim, O. K. //Smith, R. G. += uvN'Bell Tel Labs Inc/Murray Hill//Nj/07974'= uvNBOptical-RespInp Avalanche Photo-DiodesB= uvN11.3.2= uvN Applied Physics Letters= uvN ArticleU$M_^`@_`J"U1982U$M_^`@_`J"U41U$M_^`@_`J"U1U$M_^`@_`J"U95my 9 D2;@4?+Forrest, S. R. //Kim, O. K. //Smith, R. G. += uvN'Bell Tel Labs Inc/Murray Hill//Nj/07974'= uvNBOptical-Response Time of In0.53ga0.47as/Inp Avalanche Photo-DiodesB= uvN11.3.2= uvN Applied Physics Letters= uvN ArticleU$M_^`@_`J"U1982U$M_^`@_`J"U41U$M_^`@_`J"U1U$M_^`@_`J"U95-98U$M_^`@_`J"U%?\\As01mesant\Procite Databases\WCS\Articles/Forrest SR 1982.pdf?U$M_^`@_`J"U+106U$M_^`@_`J"U16180;@>?@Forrest, S. R. //Schmidt, P. H. //Wilson, R. B. //Kaplan, M. L. @x=Ps6$At&T Bell Labs/Murray Hill//Nj/07974$x=Ps6mRelationship Between the Conduction-Band Discontinuities Band-Gap Differences of InGaAsp/Inp Heterojunctionsmx=Ps602.1.3x=Ps6 Applied Physics Lettersx=Ps6 Article$M_@_71984$M_@_745$M_@_711$M_@_7 1199-1201 $M_@_7%?\\As01mesant\Procite Databases\WCS\Articles/Forrest SR 1984.pdf?$M_H@_7+145$M_@_716190;1?f?Frensley, W. R. =ksxk4Texas Instruments Inc,Cent Res Labs/Dallas//Tx/752654=ksxkDBoundary-Conditions for Opary-Conditions for Op,\N~dl\As01mesant\Procite Databases\WCS\Articles\Carlsson N 1994 12.pdfBi=`qn̬+110$M_@_,Islands$M_@_ 6750t;@| Chadi, D. J.  p#=`q̬0Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/943040p#=`q̬NAtomic-Structure of GaAs(100)-(2x1) and GaAs(100)-(2x4) Reconstructed SurfacesNp#=`q̬06.2.1p#=`q̬ 6Journal of Vacuum Science & Technology a-Vacuum Films6p#=`q̬ Article$M_l\ @_T l 1987 JUL-AUG $M_l\ @_T l5$M_l\ @_T l4$M_l\ @_T l834-837$M_l\ @_T l%@\\As01mesant\Procite Databases\WCS\Articles\Chadi DJ 1987 07.pdf@=`q̬+331%$M_l\ @_T l6780Z$M_GPY//*/  /|)/  $ /, 4 /< /L D /\ T d l t 0 0|   0 0  $0*    L+     ,0 40<0    D0  $ , 4 L0< *D T0L \0T \ d l t d0+l0 | t0    |0  0   B\ Cd El E t G| I zpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&2Tneling Semiconductor-DeviceBC=ksE04.1.1.3(e=ksE(e=ksE "Physical Review B-Condensed Matter"C=ksE ArticleK$M_TV@_|V8mK 1987 Jul 15 K$M_TV@_|V8mK36K$M_TV@_|V8mK3K$M_TV@_|V8mK 1570-1580 K$M_TV@_|V8mK%C\\As01mesant\Procite Databases\WCS\Articles\Frensley WR 1987 07.pdf,K$M_TV@_|V8mKK$SM_TV@_|V8mK+146K$M_TV@_|V8mK16240j.=@^[Carlsson, N. //Seifert, W. //Petersson, A. //Castrillo, P. //Pistol, M. E. //Samuelson, L. [=`qn̬dNQuantized Current in a Quantum-Dot Turnstile Using Oscillating Tunnel BarriersNH00 Ga ; Philips Res Labs/Redhill Rh1 5ha/Surrey/EnglanddH=0 q>dNQuantized Current in a Quantum-Dot Turnstile Using Oscillating Tunnel BarriersNH$M_|BCON~);@A6Lagowski, J. //Lin, D. G. //Aoyama, T. //Gatos, H. C. 6=Xpx.Mit/Cambridge//Ma/02139=Xpx.5Identification of Oxygen-Related Midgap Level in GaAs5=Xpx.,01.4.3 "Deep" Localized-Wave-Function Levels,=Xpx. Applied Physics Letters=Xpx. ArticleJ$M_$MO@_ O-dJ1984J$M_$MO@_ O-dJ44J$M_$MO@_ O-dJ3J$M_$MO@_ O-dJ336-338J$M_$MO@_ O-dJ%=\\As01mesant\Procite Databases\WCS\Articles/Lagowski 1984.pdf=0=Xpx.+105J$M_$MO@_ O-dJ16800t;@&"Chandrasekhar, M. //Pollak, F. H. "4=PniBrown Univ,Dept Phys/Providence//Ri/02912 ; Yeshiva Univ,Belfer Grad Sch Sci,Dept Phys/New York//Ny/10033i4=PnLEffects of Uniaxial Stress on the Electroreflectance Spectrum of Ge and GaAsL4=Pn05.1.3N=PnN=Pn "Physical Review B-Condensed Matter"4=Pn Article$M_T@_Lx1977 February 15$M_T@_Lx15$M_T@_Lx4$M_T@_Lx 2127-2144 $M_T@_Lx%G\\As01mesant\Procite D;[?A@Leadley, D. R. //Nicholas, R. J. //Foxon, C. T. //Harris, J. J. @=t=Univ Oxford,Clarendon Lab,Dept Phys,Parks ; Univ Nottingham,Dept Phys/No@pN~ ;@nA]Kouwenhoven, L. P. //Johnson, A. T. //Vandervaart, N. C. //Harmans, C. J. P. M.//Foxon, C. T.]H=0 q>ddDelft Univ Technol,Fac Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/Redhill Rh1 5ha/Surrey/EnglanddH=0 q>dNQuantized Current in a Quantum-Dot Turnstile Using Oscillating Tunnel BarriersNH=0 q>d04.4.2H=0 q>dH=0 q>d Physical Review LettersH=0 q>d Article$M_|BC@_Ct 1991 Sep 16 $M_|BC@_Ct67$M_|BC@_Ct12$M_|BC@_Ct 1626-1629 $M_|BC@_Ct%F\\As01mesant\Procite Databases\WCS\Articles\Kouwenhoven LP 1991 09.pdfF$M_|BC@_Ct*We have observed a quantized current in a lateral quantum dot, defined by metal gates in the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. By modulating the tunnel barriers in the 2DEG with two phase-shifted rf signals, and employing the Coulomb blockade of electron tunneling, we produced quantized current plateaus in the current-voltage characteristics at integer multiples of ef, where f is the rf frequency. This demonstrates that an integer number of electrons pass through the quantum dot each rf cycle.$M_|BC@_Ct+119$M_|BC@_Ct,2Dimensional Electron-Gas/ Conductance Oscil:lations2$M_|BC@_Ct16750;h1?A6Lagowski, J. //Lin, D. G. //Aoyama, T. //Gatos, H. C. 6=Xpx.Mit/Cambridge//Ma/02139=Xpx.5Identification of|N~)$M_@_JG Mar 21, 1994 $M_@_JG72$M_@_JG12$M_@_JG 1906-1909 $M_@_JG%B\\As01mesant\Procite Databases\WCS\Articles\Leadley DR 1994 03.pdf,$M_@_JG$M_@_JG*An experimental analysis of the fractional quantum Hall effect is described in which oscillations in rho(xx) are treated as Shubnikov-de Haas oscillations of the composite fermions (CF) formed by a flux attachment transformation. We find a CF effective mass of 0.5m(e) at zero effective field which increases weakly with effective magnetic field at a rate independent of carrier density. The CF quantum scattering times are the same as for the underlying single particle electron states.$M_@_JG+125$M_@_JG,Landau-Level/ Quantum$M_@_JG16810=qg<a=qg<%:\\Aeron\Procite Databases\WCS\Articles\Dean PJ 1968 04.pdf:$M_ԹĻ@_Hc԰' 0031-899X $M_ԹĻ@=qg<a=qg<%:\\Aeron\Procite Databases\WCS\Articles\Dean PJ 1968 04.pdf:$M_ԹĻ@_Hc԰' 0031-899X $M_ԹĻ@=qg<a=qg<%:\\Aeron\Procite Databases\WCS\Articles\Dean PJ 1968 04.pdf:$M_ԹĻ@_Hc԰' 0031-899X $M_ԹĻ@=qg<a=qg<%:\\Aeron\Procite Databases\WCS\Articles\Dean PJ 1968 04.pdf:$M_ԹĻ@_Hc԰' 0031-899X $M_ԹĻ@EN~<2f>@%Dean, P.J.//Henry, C.H.//Frosch, C.J.%p=qg<UInfrared Donor-Acceptor Pair Spectra Involving Deep Oxygen Donor in Gallium PhosphideUp=qg<,01.4.3 "Deep" Localized-Wave-Function Levels,p=qg< Physical Reviewp=qg<AMERICAN PHYSICAL SOC$M_ԹĻ@_Hc԰1968$M_ԹĻ@_Hc԰168$M_ԹĻ@_Hc԰3$M_ԹĻ@_Hc԰812-816a=qg<a=qg<%?\\As01mesant\Procite Databases\WCS\Articles\Dean PJ 1968 04.pdf?$M_ԹĻ@_Hc԰' 0031-899X $M_ԹĻ@_Hc԰)5English A1968A982800021 Copyright 2003 SciSearch Plus5$M_ԹĻ@_Hc԰+158$M_ԹĻ@_Hc԰64950HHB11HHB809-813HHB%9\\Aeron\Procite Databases\WCS\Articles/Leheny RF 1979.pdf9HHB11HHB809-813HHB%9\\Aeron\Procite Databases\WCS\Articles/Leheny RF 1979.pdf9HHB11HHB809-813HHB%9\\Aeron\Procite Databases\WCS\Articles/Leheny RF 1979.pdf9HHB11HHB809-813HHB%9\\Aeron\Procite Databases\WCS\Articles/Leheny RF 1979.pdf9>24$M_ @_>2$M_ @_>267-275$M_ @pN~.=ЅypnԫAEnergetics of GaAs(100)-(2x4) and GaAs(100)-(4x2) ReconstructionsA.=Ѕypnԫ06.2.1.=Ѕypnԫ Physical Review Letters.=Ѕypnԫ Article$M_ԽĿ@_fԴ Oct 4, 1993 $M_ԽĿ@_fԴ71$M_ԽĿ@_fԴ14$M_ԽĿ@_fԴ 2276-2279 $M_ԽĿ@_fԴ%C\\As01mesant\Procite Databases\WCS\Articles\Northrup JE 1993 10.pdf,@/hH9XXF.=Ѕypnԫ.=Ѕypnԫ*bFormation energies for a variety of GaAs(100) surface structures have been calculated as a function of the atomic chemical potentials using the first-principles pseudopotential density-functional approach. We find that the surface transforms through four phases as the chemical potential varies across its accessible range. As the Ga chemical potential increases the surface transforms from an As-rich c(4x4) through two distinct (2x4) structures and finally to a Ga-rich (4x2) phase. The predicted structures Ltd,Dept Res & Dev,Anan,Tokushima 774,Japanp2=o4RaRecombination Dynamics of Localized Excitons in In0.20ga0.80n-In0.05ga0.95 Multiple Quantum Wellsa2=o4R03.2.22=o4R2=o4R "Physical Review B-Condensed Matter"2=o4R ArticleR$M_T@_LATP 1997 Jan 15 R$M_T@_LATP55R$M_T@_LATP4R$M_T@_LATP R1938-R1941 ^N~aD2k977 02.pdfB$M_D4@_,D+176$M_D4@_,D16850;@6BNorthrup, J. E. //Froyen, S. h= p~ԫcXerox Corp,Palo Alto Res Ctr,3333 Coyote Hill Rd/Palo ; Natl Renewable Energy Lab/Golden//Co/80401ch= p~ԫGStructure of GaAs(001) Surfaces: the Role of Electrostatic InteractionsGh= p~ԫ06.2.1h= p~ԫ "Physical Review B-Condensed Matter"h= p~ԫ Article$M_$@_ ~$ 1994 Jul 15 = p~ԫ50$M_$@_ ~$3$M_$@_ ~$ 2015-2018 $M_$@_ ~$%C\\As01mesant\Procite Databases\WCS\Articles\Northrup JE 1994 07.pdf,@/hH9XXF= p~ԫ= p~ԫ*We report first-principles total-energy calculations for the GaAs(001) surface. Our results i;1?@BNorthrup, J. E. //Froyen, S. .=ЅypnԫcXerox Corp,Palo Alto Res Ctr,3333 Coyote Hill Rd/Palo ; Natl Renewable Energy Lab/Golden//Co/80401c.=ЅypnԫAEnergetics of GaAs(100)-(2x4) and GaAs(100)-(4x2) ReconstructionsA.=Ѕypnԫ06.2.1.=Ѕypnԫ Physical Review Letters.=Ѕypnԫ Article$M_ԽĿ@_fԴ Oct 4, 1993 $M_ԽĿ@_fԴ71$M_ԽĿ@_fԴ14$M_ԽĿ@_fԴ 2276-2279 $M_ԽĿ@_fԴ%>\\Aeron\Procite Databases\WCS\Articles\Northrup JE 1993 10.pdf'@/hH9XXX1a!QXndicate that the 2 x 4 reconstruction corresponds to the beta2(2 X 4) structure, which exhibits two As dimers in the top layer and a third As dimer in the third layer. This structure has a lower surface energy than the beta(2 x 4) model, which has three As dimers in the top layer. We also find that a model recently proposed by Skala et al. [Phys. Rev. B 48, 9138 (1993)] for the structure of the Ga-rich 4 x 2 phase is energetically unfavorable. From our results we conclude that electrostatic interactions between the charged building blocks of polar semiconductor surfaces play an important role in determining the equilibrium structure. We introduce a simple model for estimating these interactions.$M_$@_ ~$+130$M_$@_ ~$,HScannin tg-Tunneling-Microscopy/ Spectroscopy/ Gaas(100)-(2x4)/ EnergeticsH$M_$@_ ~$16950;@@BNorthrup, J. E. //Froyen, S. .=ЅypnԫcXerox Corp,Palo Alto Res Ctr,3333 Coyote Hill Rd/Palo ; Natl Renewable Energy Lab/Golden//Co/80401c;1?JBENarukawa, Y. //Kawakami, Y. //Fujita, S. //Fujita, S. //Nakamura, S. E2=o4RpKyoto Univ,Dept Elect Sci & Engn,Kyoto 60601,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Anan,Tokushima 774,Japanp2=o4RaRecombination Dynamics of Localized Excitons in In0.20ga0.80n-In0.05ga0.95 Multiple Quantum Wellsa2=o4R03.2.22=o4R2=o4R "Physical Review B-Condensed Matter"2=o4R ArticleR$M_T@_LATP 1997 Jan 15 R$M_T@_LATP55R$M_T@_LATP4R$M_T@_LATP R1938-R1941  :jN~9L2 account for most scanning tunneling microscopy observations for the c(4x4), (2x4), and (4x2) phases.b$M_ԽĿ@_fԴ+127$M_ԽĿ@_fԴ,jScanning Tunneling Microscopy/ Norm-Conserving Surface/ Gaas(001)/ Stoichiometry/ Spectroscopy/ Energy/ Sij$M_ԽĿ@_fԴ16960;@JBENarukawa, Y. //Kawakami, Y. //Fujita, S. //Fujita, S. //Nakamura, S. E2=o4RpKyoto Univ,Dept Elect Sci & Engn,Kyoto 60601,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Anan,Tokushima 774,Japanp2=o4RaRecombination Dynamics of Localized Excitons in In0.20ga0.80n-In0.05ga0.95 Multiple Quantum Wellsa2=o4R03.2.22=o4R2=o4R "Physical Review B-Condensed Matter"2=o4R ArticleR$M_T@_LATP 1997 Jan 15 R$M_T@_LATP55R$M_T@_LATP4R$M_T@_LATP R1938-R1941 f>h1?'Cuthbert, J.D.//Henry, C.H.//Dean, P.J.'؟=oS<STemperature-Dependent Radiative Recombination Mechanisms in GaP(Zn,O) and GaP(Cd,O)S؟=oS<01.4.4 Excitons؟=oS< Physical Review؟=oS<American Physical Soc؟=oS<1968$M_@_170$M_@_3$M_@_739-748؟=oS<968B316700022 Copyright 2003 SciSearch Plus5$M_@_+101$M_@_64960)YIy=T2s,Clarendon Lab,Parks Rd/Oxford Ox1 ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandj`=dsx .Magnetooptics in GaAs-Ga1-xAlxAs Quantum-Wells.`=dsx 03.1.3`=dsx `=dsx  "Physical Review B-Condensed Matter"`=dsx  Article$M_TD@_<T 1986 Sep 15 $M_TD@_<T34$M_TD@_<T6$M_TD@_<T 4002-4009 $M_TD@_<T%A\\As01mesant\Procite Databases\WCS\Articles\Rogers DC 1986 09.pdfA$M_TD@_<T+169$M_TD@_<T17030;@B`Shank, C. V. //Fork, R. L. //Yen, R. //Shah, J. //Greene, B. I. //Gossard, A. C. //Weisbuch, C. `k=v|Bell Tel Labs Inc/Holmdel//Nj/07733 ; Bell Tel Labs Inc/Murray Hill//Nj/07974 ; St Gobain Dept Rech/F-92096 Paris 27//France|k=v]Picosecond Dynamics of Hot Carrier Relaxation in Highly Excited Multi-Quantum Well Structures]k=v03.2.1k=v Solid State Communicationsk=v Article$M_|@_t`1983$M_|@_t`47$M_|@_t`12$M_|@_t`981-983$M_|;h1?:CUSpalek, J. //Lewicki, A. //Tarnawski, Z. //Furdyna, J. K. //Galazka, R.//Obuszko, Z. Ux=Xlq_Acad Min Cracow,Dept Solid State Phys/Pl-30059 ; PuSC~$M_|@_t`1983$M_|@_t`47$M_|@_t`12$M_|@_t`981-983$M_|@_t`%=\\As01mesant\Procite Databases\WCS\Articles/Shank CV 1983.pdf=v=v+115$M_|@_t`17150;@:CUSpalek, J. //Lewicki, A. //Tarnawski, Z. //Furdyna, J. K. //Galazka, R.//Obuszko, Z. Ux=Xlq_Acad Min Cracow,Dept Solid State Phys/Pl-30059 ; Purdue Univ,Dept Phys/W Lafayette//in/47907 ; Polish Acad Sci,Inst Phys/Pl-02668 Warsaw//Polandx=Xlq_rMagnetic-Susceptibility of Semimagnetic Semiconductors: The High-Temperature Regime and the Role of Superexchangerx=Xlq_B01.1.1 Electrons, Ions and Photons in Electric and Magnetic FieldsBx=Xlq_ "Physical Review B-Condensed Matter"x=Xlq_ Article$M_td@_\t 1986 March 1 $M_td@_\t33$M_td@_\t5$M_td@_\t 3407-3418 $M_td@_\t%@\\As01mesant\Procite Databases\WCS\Articles\Spalek J 1986 03.pdf@V$M_td@_\t+170$M_td@_\t17210[(=XpԫQTime-Resolved Raman Measurements of Intersubband Relaxation in GaAs Quantum WellsQ(=Xpԫ04.3.3(=Xp[(=XpԫQTime-Resolved Raman Measurements of Intersubband Relaxation in GaAs Quantum WellsQ(=Xpԫ04.3.3(=Xp5e ;@XC+Tatham, M. C. //Ryan, J. F. //Foxon, C. T. +(=Xpԫ[Univ Oxford,Clarendon Lab/Oxford//England ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England[(=XpԫQTime-Resolved Raman Measurements of Intersubband Relaxation in GaAs Quantum WellsQ(=Xpԫ04.3.3(=Xpԫ Physical Review Letters(=Xpԫ Article$M_@_@ 1989 Oct 9 $M_@_@63$M_@_@15$M_@_@ 1637-1640 $M_@_@%A\\As01mesant\Procite Databases\WCS\Articles\Tatham MC 1989 10.pdf,@/hH9XXF=Xpԫ=Xpԫ+177$M_@_@17240$M_|l@_ddM| Apr 22, 1994 $M_|l@_ddM|264$M_|l@_ddM|5158$M_|l@_ddM|553-556=-q8CQuantum Cascade Laser =-q8C10.2.4 =-q8C Science =-q8C Articlejection laser that differs in a fundamental way from diode lasers has been demonstrated. It is built out of quantum semiconductor structures that were grown by molecular beam epitaxy and designed by band structure engineering. Electrons streaming down a potential staircase sequentially emit photons at the steps. The steps consist of coupled quantum wells in which population inversion between discrete conduction band excited states is ^N~2t;@VFaist, J. //Capasso, F. //Sivco, D. L. //Sirtori, C. //Hutchinson, A. L. //Cho, A. Y. V =-q8C$At&T Bell Labs/Murray Hill//Nj/07974$ =-q8CQuantum Cascade Laser =-q8C10.2.4 =-q8C Science =-q8C Article$M_|l@_ddM| Apr 22, 1994 $M_|l@_ddM|264$M_|l@_ddM|5158$M_|l@_ddM|553-556$M_|l@_ddM|%A\\As01mesant\Procite Databases\WCS\Articles/Faist Jerome 1994.pdfA$M_|l@_ddM|*wA semiconductor injection laser that differs in a fundamental way from diode lasers has been demonstrated. It is built out of quantum semiconductor structures that were grown by molecular beam epitaxy and designed by band structure engineering. Electrons streaming down a potential staircase sequentially emit photons at the steps. The steps consist of coupled quantum wells in which population inversion between discrete conduction band excited states is achieved by control of tunneling. A strong narrowing of the emission spectrum, above threshold, provides direct evidence of laser action at a wavelength of 4.2 micrometers with peak powers in excp9Collective-Excitation Gap in the Fractional Quantum Hall-9=HuJ>02.6.1=HuJ> Physical Review Letters=HuJ> ArticleJ$M_SU@_U@J 1985 Feb 11 J$M_SU@_U@J54J$M_SU@_U@J6J$M_SU@_U@J581-583J$M_SU@_U@J%<\\Aeron\Procite Databases\WCS\Articles\Girvin SM 1985 02.pdf'J$M_SU@_U@JJ$M_SU@_U@J+198J$M_SU@_U@J17570)N~4<t;@9Fejer, M. M. //Magel, G. A. //Jundt, D. H. //Byer, R. L. 9J=`o~8lStanford Univ,Edward L Gington Lab/Stanford//Ca/94305 ; Texas Instruments Inc,Cent Res Labs/Dallas//Tx/75265lJ=`o~8BQuasi-Phase-Matched 2nd Harmonic-Generation: Tuning and TolerancesBJ=`o~810.5.4J=`o~8 #IEEE Journal of Quantum Electronics#J=`o~8 Article$M_ @_$. 28$M_ @_$. 11$M_ @_$.  2631-2654 $M_ @_$. %@\\As01mesant\Procite Databases\WCS\Articles/Fejer MM 1992 11.pdf@J=`o~8*Quasi-phase matching is a technique for phase matching nonlinear optical interactions in which the relative phase is corrected at regular intervals using a structural periodicity built into thtl Res Council Canada/Ottawa K1a 0r6/Ontario/Canada=HuJ>9Collective-Excitation Gap in the Fractional Quantum Hall-9=HuJ>02.6.1=HuJ> Physical Review Letters=HuJ> ArticleJ$M_SU@_U@J 1985 Feb 11 J$M_SU@_U@J54J$M_SU@_U@J6J$M_SU@_U@J581-583J$M_SU@_U@J%<\\Aeron\Procite Databases\WCS\Articles\Girvin SM 1985 02.pdf'J$M_SU@_U@JJ$M_SU@_U@J+198J$M_SU@_U@J17570@_|U 1983 Oct 24 $M_@_|U51D@_<.T1983$M_TD@_<.Tz)N~)|222$M_TD@_<.T10$M_TD@_<.T 1489-1492 $M_TD@_<.T%D\\As01mesant\Procite Databases\WCS\Articles//Goldstein nL 1983 10.pdfD=n1+133$M_TD@_<.T17610;@EYGornik, E. //Lassnig, R. //Strasser, G. //Stormer, H. L. //Gossard, A. C. //Wiegmann, W. Yp=o=_Innsbruck Univ,Inst Exptl Phys/a-6020 InNsbruck//Austria ; at&T Bell Labs/Murray Hill//Nj/07974_p=o=ESpecific-Heat of Two-Dimensional Electrons in GaAs-GaAlAs MultilayersEp=o=02.5.1z=o=z=o= Physical Review Lettersp=o= Article$M_ @_C 1985 Apr 22 $M_ @_C54$M_ @_C16$M_ @_C 1820-1823 $M_ @_C%@\\As01mesant\Procite Databases\WCS\Articles\Gornik E 1985 04.pdf@$M_ @_C+143$M_ @_C17680ticle&$M_/1@_1j=&1981&$M_/1@_1j=&52&$M_/1@_1j=&7&$M_/1@_1j=& 4617-4619 ticle&$M_/1@_1j=&1981&$M_/1@_1j=&52&$M_/1@_1j=&7&$M_/1@_1j=& 4617-4619 ticle&$M_/1@_1j=&1981&$M_/1@_1j=&52&$M_/1@_1j=&7&$M_/1@_1j=& 4617-4619 1@_1j=&17700>$Tl2  Review$M_ @_ Jan 1992$M_ @_  7$M_ @_ 1$M_ @_ 235-252$M_ @_ %=\\As01mesant\Procite Databases\WCS\Articles/Edgar 1992 01.pdf==q *Diamond, silicon carbide, gallium nitride, aluminum nitride, and boron nitride are currently under development for both electronic and optoelectronic semiconductor devices. Predictions based on their physical properties indicate that devices made from these materials should be far superior to currently available devices in high power, high frequency, and short wavelength applications. Yet actual device implementation requires that adequate materials processing technology exists. In this review, the current state of the art for producing semiconductor devices from these materials is evaluated, and recommendations for areas needing fu558929A1 GB1528990A JP51092180A2 JP57035574B4 US3979239Q;US3342652 US3615955 US3775201 US3791948 US3869323 US3869324;"IUS4428795 US4762559 US5783497 US5837610 US4879258 US4968381 US5232875 US5256599 US5562530 US5679063 US5985045 US6022807 US5069002 US5157876 US5944588 US5972124 US6143663 US6171180 US6224464 US6232231 US6302766 US5478435 US5527423 US6200896 US6214704 US5318927 US5320706 US4321747 US4343662 US5032203 US5036015 US5166093 US5188987I%6\\Aeron\Procite Databases\WCS\Patents\US03979239__.pdf6' H01L 21/304 +33480p\\As01mesant\Procite Databases\WCS\Articles/Miller TA 1984.pdf>$M_@_q+129$M_@_q17750p<@\ Edgar, J. H.  =q CKansas State Univ Agr & Appl Sci,Dept Chem Engn/Manhattan//Ks/66506C=q CProspects for Device Implementation of Wide Band-Gap SemiconductorsC=q 08.0=q  Journal of Materials Research=q558929A1 GB1528990A JP51092180A2 JP57035574B4 US3979239Q;US3342652 US3615955 US3775201 US3791948 US3869323 US3869324;"IUS4428795 US4762559 US5783497 US5837610 US4879258 US4968381 US5232875 US5256599 US5562530 US5679063 US5985045 US6022807 US5069002 US5157876 US5944588 US5972124 US6143663 US6171180 US6224464 US6232231 US6302766 US5478435 US5527423 US6200896 US6214704 US5318927 US5320706 US4321747 US4343662 US5032203 US5036015 US5166093 US5188987I%6\\Aeron\Procite Databases\WCS\Patents\US03979239__.pdf6' H01L 21/304 +33480p\\As01mesant\Procite Databases\WCS\Articles/Jordan AS 1979.pdf>@=u+262$M_ԈĊ@_d7290m=rSOLight Scattering in Solids V: Raman-Spectroscopy of Vibrations in Superlattices=rS1=rSm=rSOLight Scattering in Solids V: Raman-Spectroscopy of Vibrations in Superlattices=rS1=rSxs$07.1.4=xs$ Applied Physics Lettpplied Physics Lettsics LettmEu`|2t;@Jusserand, B. //Cardona, M. =rSmCtr Natl Etud Telecommun,196 Rue Bagneux/F-92220 ; Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fedm=rSOLight Scattering in Solids V: Raman-Spectroscopy of Vibrations in Superlattices=rS1=rS04.2.3=rS Topics in Applied Physics=rS Review$M_@_I1989$M_@_I66$M_@_I49-152$M_@_I%@\\As01mesant\Procite Databases\WCS\Articles/Jusserand B 1989.pdf,HB=lrSHB=rS+299$M_@_I7300p<@ 'Okumura, H. //Misawa, S. //Yoshida, S. '"=xs$7Electrotech Lab,1-1-4 Umezono/Tsukuba/Ibaraki 305/Japan7"=xs$X=PnTtResonant Rayleigh-Scattering From an Inhomogeneously Broadened Transition - a New Probe of the Homogeneous Linewidtht4=PnT05.1.3f=PnTf=PnT Physical Review Letters4=PnT Articles$M_|~@_|~s 1982 Sep 27 s$M_|~@_|~s49s$M_|~@_|~s13s$M_|~@_|~s930-932s$M_|~@_|~s%<\\Aeron\Procite Databases\WCS\Articles\Hegarty J 1982 09.pdf<s$M_|~@_|~s+122s$M_|~@_|~s17940s+122s$M_|~@_|~s179402bN~ _2;@F8Ho, P. T. //Glasser, L. A. //Ippen, E. P. //Haus, H. A. 8b=(Dx2?0[Mit,Dept Elect Engn & Comp Sci/Cambridge//Ma/02139 ; Mit,Electr Res Lab/Cambridge//Ma/02139[b=(Dx2?08Picosecond Pulse Generation With a Cw Gaaias Laser Diode8b=(Dx2?010.5.1b=(Dx2?0 Applied Physics Lettersb=(Dx2?0 Article2$M_d;T=@_L=xd219782$M_d;T=@_L=xd2332$M_d;T=@_L=xd232$M_d;T=@_L=xd2241-2422$M_d;T=@_L=xd2%:\\As01mesant\Procite Databases\WCS\Articles/Ho PT 1978.pdf:2$M_d;T=@_L=xd2:+1722$M_d;T=@_L=xd217950<@1Lee, K.//Shur, M. S.//Drummond, T. J.//Morkoc, H.1@(=wȒUniv Minnesota,Dept Elect Engn/Minneapolis//Mn/55455 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801@(=wȒdCurrent Voltage and Capacitance Voltage Characteristics of Modulation-Doped Field-Effect Transistorsd@(=wȒ09.1.4*@(=wȒ %IEEE Transactions on Electron Devices%@(=wȒ Article$M_$\@_T~[ 1983$M_$\@_T~[ 30$M_$\@_T~[ 3$M_$\@_T~[ 207-212$M_$\@_T~[ 10$M_$\@_T~[ %9\\As01mesant\Procite Databases\WCS\Articles/Thorne RE.pdf9+128$M_$\@_T~[ 60700,=Z0`N~ ;@F2Kohl, M. //Heitmann, D. //Grambow, P. //Ploog, K. 2,=Zuj1\\As01mesant\Procite Databases\WCS\Articles\Kohl M 1989 11.pdf>^$M_Pg i@_i^+135^$M_g i@_i^18050;@F@Kraut, E. A. //Grant, R. W. //Waldrop, J. R. //Kowalczyk, S. P. @؍=q(Ȫ3Rockwell Int,Electr Res Ctr/Thousand Oaks//Ca/913603؍=q(ȪPrecise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials؍=q(Ȫ02.1.3 Physical Review Letters؍=q(Ȫ Article$M_\L@_D^\ 1980 Jun 16 $M_\L@_D^\44x=q(Ȫ24$M_\L@_D^\ 1620-1623 $M_\L@_D^\9x=q(Ȫ%@\\As01mesant\Procite Datab;[?FLam, P. K. //Girvin, S. M. =t.*Nbs,Div Surface Sci/Gaithersburg//Md/20760*=t.7Liquid-Solid Transition aMatter"=t. AFvN~2ases\WCS\Articles\Kraut EA 1980 06.pdf@$M_\L@_D^\+139$M_\L@_D^\18070;@FLam, P. K. //Girvin, S. M. =t.*Nbs,Div Surface Sci/Gaithersburg//Md/20760*=t.7Liquid-Solid Transition and the Fractional Quantum-Hall7=t.02.6.3=t. "Physical Review B-Condensed Matter"=t. Article$M_@_v* 1984 Jul 1 $M_@_v*30$M_@_v*1$M_@_v*473-475$M_@_v*%>\\As01mesant\Procite Databases\WCS\Articles\Lam PK 1984 07.pdf,$M_@_v*$M_@_v*+159&$M_@_v*18100e Databases\WCS\Articles\Lautenschlager P 1987 06.pdfC$M_4$@_n4+249$M_4$@_n47380$M_4$@_n4%C\\Aeron\Procite Databases\WCS\Articles\Lautenschlager P 1987 06.pdfC$M_4$@_n4+249$M_4$@_n47380$M_4$@_n4%C\\Aeron\Procite Databases\WCS\Articles\Lautenschlager P 1987 06.pdfC$M_4$@_n4+249$M_4$@_n47380$M_4$@_n4%C\\Aeron\Procite Databases\WCS\Articles\Lautenschlager P 1987 06.pdfC$M_4$@_n4+249$M_4$@_n47380$M_4$@_n4%C\\Aeron\Procite Databases\WCS\Articles\Lautenschlager P 1987 06.pdfC$M_4$@_n4+249$M_4$@_n47380Hx  =m29Velocity-Field Characteristics of Ga1-xInxP1-yAsy Alloys&HHBHHBHHBHHBHHBHHB HHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEHHB Applied Physics LettersHHB ArticleHHB 1977HHB 30HHB 5HHB 242-244HHB %B\\As01mesant\Procite Databases\WCS\Articles/Liuttlejohn MA 1976.pdfBHHB +151HHB 18160;@hG@Miller, R. C. //Kleinman, D. A. //Gossard, A. C. //Munteanu, O. @=s'Bell Tel Labs Inc/Murray Hill//Nj/07974'=s Biexcitons in GaAs Quantum Wells =s03.1.4X$=s "Physical Review B-Condensed Matter"=s Article $M_@_   1982 May 15 $M_@_  25 $M_@_  10 $M_@_   6545-6547 $M_@_  %A\\As01mesant\Procite Databases\WCS\Articles\Miller RC 1982 05.pdf, $M_@_   $M_@_  ;1?GlMoon, K. //Mori, H. //Yang, K. //Girvin, S. M. //Macdonald, A. H. //Zheng, L. //Yoshioka, D. //Zhang, S. C. lP=Eq&Indiana Univ,Dept Phys/Bloomi ;kN~ =Eq& "Physical Review B-Condensed Matter"P=Eq& Review$M_@_r 1995 Feb 15 $M_@_r51$M_@_r8$M_@_r 5138-5170 $M_@_r%>\\As01mesant\Procite Databases\WCS\Articles\Moon K 1995 02.pdf,$M_@_r$M_@_r+179$M_@_r,Strong Magnetic-Field/ 2-Dimensional Electron-Systems/ Two-Dimensional Electrons/ Ginzburg-Landau Theory/ Excitations/ Wave-Functions/ Well System/ Monte-Carlo/ Xy- Energy-Spectrum$M_@_r18360;@G/Paalanen, M. A. //Tsui, D. C. //Gossard, A. C. /=Xpԫ'Bell Tel Labs Inc/Murray Hill//Nj/07974'=Xpԫ)Quantized Hall-Effect at Low-Temperatures)=Xpԫ02.5.2=Xpԫ "Physical Review B-Condensed Matter"=Xpԫ Article$M_$@_ $ 1982 Apr 15=Xpԫ=Xpԫ25$M_$@_ $8$M_$@_ $ 5566-5569 $M_$@_ $%C\\As01mesant\Procite Databases\WCS\Articles\Paalanen MA 1982 04.pdf,@/hH9XXF}=Xpԫ=Xpԫ+106$M_$@_ $18430;1?&H\\As01mesant\Procite Databases\WCS\Articles\Moon K 1;[?G/Paalanen, M. A. //Tsui, D. C. //Gossard, A. C. /=Xpԫ'Bell Tel Labs Inc/Murray Hill//Nj/07974'=Xpԫ)Quantized Hall-Effect at Low-Temperatures)=Xpԫ02.5.2=Xpԫ "Physical Review B-Condensed Matter"=Xpԫ=Ho,5=Ho,.^4*;@&H\\As01mesant\Procite Databases\WCS\Articles/Pinczuk A 1984.pdf>($SM_13@_3 (+127($M_13@_3 (18500w Article$M_\L@_Dc\1985$M_\L@_Dc\55$M_\L@_Dc\23$M_\L@_Dc\w Article$M_\L@_Dc\1985$M_\L@_Dc\55$M_\L@_Dc\23$M_\L@_Dc\w Article$M_\L@_Dc\1985$M_\L@_Dc\55$M_\L@_Dc\23$M_\L@_Dc\w Article$M_\L@_Dc\1985$M_\L@_Dc\55$M_\L@_Dc\23$M_\L@_Dc\T\Electric-Field Dependence of Optical-Absorption Near the Band-Gap of Quas38h*2t;@BnMiller, D. A. B. //Chemla, D. S. //Damen, T. C. //Gossard, A. C. //Wiegmann, W. //Wood, T. H. //Burrus, C. A. nh=oTpAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; at&T Bell Labs/Crawford Hill//Nj/07733ph=oT\Electric-Field Dependence of Optical-Absorption Near the Band-Gap of Quantum-Well Structures\h=oT03.3.2==oT==oT "Physical Review B-Condensed Matter"h=oT Article$M_|l@_dY| 1985 Jul 15 $M_|l@_dY|32$M_|l@_dY|2$M_|l@_dY| 1043-1060 $M_|l@_dY|%B\\As01mesant\Procite Databases\WCS\Articles\Miller DAB 1985 07.pdfB$M_|l@_dY|+1120$#M_|l@_dY|749007733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; at&T Bell Labs/Crawford Hill//Nj/07733ppD=oiYBand-Edge Electroabsorption in Quantum Well Structures: the Quantum-Conf07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; at&T Bell Labs/Crawford Hill//Nj/07733ppD=oiYBand-Edge Electroabsorption in Quantum Well Structures: the Quantum-Conf@_k%=\\Aeron\Procite Databases\WCS\Articles\Miller DAB 1984 11.pdf=$M_@_k+602$M_@_k7500j.=1?X5Chang, L. L. //Sakaki, H. //Chang, C. A. //Esaki, L. 5xD=0r>lpIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Francis Bitter Natl Ma/Ny/10598 ; Mit,Francis Bitter Natl MavIN~>2j.=@X5Chang, L. L. //Sakaki, H. //Chang, C. A. //Esaki, L. 5xD=0r>lpIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Francis Bitter Natl Magnet Lab/Cambridge//Ma/02139pxD=0r>l=Shubnikov-Dehaas Oscillations in a Semiconductor Superlattice=xD=0r>l04.3.1xD=0r>l Physical Review LettersxD=0r>l Article$M_d@_p 4 1977 Jun 20 $M_d@_p 438$M_d@_p 425$M_d@_p 4 1489-1493 $M_d@_p 4%@\\As01mesant\Procite Databases\WCS\Articles\Chang LL 1977 06.pdf`@$M_d@_p 4+110$M_d@_p 47000t;=?`]Miller, D. A. B. //Chemla, D. S. //Damen, T. C. //Wood, T. H. //Burrus, C. A. //Wiegmann, W. ]0=xPs|At&T Bell Labs,Dept Laser Sci Res,Tech Staffj/00000 ; at&T Bell Labs,Solid State Electr Res Lab,Tech Staff/Murray0=xPs|rThe Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self- Modulationr0=xPs|11.4.20=xPs| #IEEE Journal of Quantum Electronics#0=xPs| Article:$M_l:\:@_T:l:1985:$M_l:\:@_T:l:21:$M_l:\:@_T:l:9:$M_l:\:@_T:l: 1462-1476 :$M_l:\:@_T:l:%=\\Aeron\Procite Databases\WCS\Articles/Miller DAB 1985 09.pdf=W:$M_l:\:@_T:l:+372:$M_l:\:@_T:l:7520^N~p2t;@`]Miller, D. A. B. //Chemla, D. S. //Damen, T. C. //Wood, T. H. //Burrus, C. A. //Wiegmann, W. ]0=xPs|At&T Bell Labs,Dept Laser Sci Res,Tech Staff/Holmdel//Nj/07733 ; at&T Bell Labs,Quantum Phys & Electr Res ; at&T Bell Labs/Crawford Hill//Nj/00000 ; at&T Bell Labs,Solid State Electr Res Lab,Tech Staff/Murray0=xPs|rThe Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self- Modulationr0=xPs|11.4.20=xPs| #IEEE Journal of Quantum Electronics#0=xPs| Article:$M_l:\:@_T:l:1985:$M_l:\:@_T:l:21:$M_l:\:@_T:l:9:$M_l:\:@_T:l: 1462-1476 :$M_l:\:@_T:l:%B\\As01mesant\Procite Databases\WCS\Articles/Miller DAB 1985 09.pdfB\:$M_l:\:@_T:l:+372:$M_l:\:@_T:l:7520=or3KGrowth-Conditions and Characterization of InGaAs GaAs Layers SuperlatticesK=or306.1.4=or3 J=or3KGrowth-Conditions and Characterization of InGaAs GaAs Layers SuperlatticesK=or306.1.4=or3 J?tA@_lAj'619846$M_?tA@_lAj'6556$M_?tA@_lAj'686$M_?tA@_lAj'6 2904-2909 6$M_?tA@_lAj'6%<\\Aeron\Procite Databases\WCS\Articles/Quillec M 1984 04.pdf<6$M_?tA@_lAj?'6+1046$M_?tA@_lAj'618540 7030^"RN~ 2\7030M<@(Piotrowska, A.//Guivarch, A.//Pelous, G.((=qZw<8Ctr Natl Etud Telecommun,Lab Icm/F-22300 Lannion//France8(=qZw<TOhmic Contacts to III-V-Compound Semiconductors : a Review of Fabrication TechniquesT(=qZw<08.3.2(=qZw< Solid-State Electronics(=qZw< ReviewL$M_UW@_VTtL1983L$M_UW@_VTtL26L$M_UW@_VTtL3L$M_UW@_VTtL179-197V=qZw<V=qZw<169L$M_UW@_VTtL%A\\As01mesant\Procite Databases\WCS\Ar}ticles\Piotrowska A 1983.pdfAL$M_UW@_VTtL+137L$M_UW@_VTtL61930;@IBSkromme, B. J. //Sandroff, C. J. //Yablonovitch, E. //Gmitter, T. BU=8vԫ8Bell Commun Res,331 Newman Springs Rd/Red Bank//Nj/077018U=8vԫNEffects of Passivating Ionic Films on the Photoluminescence Properties of GaAsNU=8vԫ08.2.1U=8vԫ Applied Physics LettersU=8vԫ Article$M_|vlx@_dx, 1987 Dec 14 $M_|vlx@_dx,51$M_|vlx@_d;5m=?IDSollner, T. C. L.//Tannenwald, P. E. //Peck, D. D. //Goodhue, W. D. D@=Xu#Mit,Lincoln Lab/Lexington//Ma/02173#@=Xu?IDSollner, T. C. L.//Tannenwald, P. E. //Peck, D. D. //Goodhue, W. D. D@=Xu#Mit,Lincoln Lab/Lexington//Ma/02173#@=Xu)Yd$x,24$M_|vlx@_dx, 2022-2024 $M_|vlx@_dx,%B\\As01mesant\Procite Databases\WCS\Articles\Skromme BJ 1987 12.pdf,XhH9XoXFU=8vԫ+122$M_|vlx@_dx,18690;@IDSollner, T. C. L.//Tannenwald, P. E. //Peck, D. D. //Goodhue, W. D. D@=Xu#Mit,Lincoln Lab/Lexington//Ma/02173#@=XuQuantum Well Oscillators@=Xu09.2.4 Applied Physics Letters@=Xu Article$M_AB@_B1984$M_AB@_B45$M_AB@_B12$M_AB@_B 1319-1321 $M_AB@_B%C\\As01mevsant\Procite Databases\WCS\Articles/Sollner TCL 1984 09.pdfC+163$M_AB@_B18710:+145$M_@_418750%:\\Aeron\Procite Databases\WCS\Articles/Stormer HL 1982.pdf'$M_@_4$M_@_4:+145$M_@_418750%:\\Aeron\Procite Databases\WCS\Articles/Stormer HL 1982.pdf'$M_@_4$M_@_4:+145$M_@_418750%:\\Aeron\Procite Databases\WCS\Articles/Stormer HL 1982.pdf'$M_@_4$M_@_4:+145$M_@_418750%:\\Aeron\Procite Databases\WCS\Articles/Stormer HL 1982.pdf'$M_@_4$M_@_4:+145$M_@_418750%UC%U <*;@>I/Stormer, H. L. //Gossard, A. C. //Wiegmann, W. /ر=s&'Bell Tel Labs Inc/Murray Hill//Nj/07974'ر=s&KObservation of Intersubband Scattering in a Two-Dimensional Electron-SystemKر=s&04.3.3ر=s& Solid State Communicationsر=s& Article$M_@_41982$M_@_441$M_@_410$M_@_4707-709$M_@_4%?\\As01mesant\Procite Databases\WCS\Articles/Stormer HL 1982.pdf,$M_@_4$M_@_?4+145$M_@_418750;@HI=Stormer, H. L. //Pinczuk, A. //Gossard, A. C. //Wiegmann, W. =X=x6sMBell Tel Labs Inc/Murray Hill//Nj/07974 ; Bell Tel Labs Inc/Holmdel//Nj/07733MX=x6s_Influence of an Undoped (Alga)as Spacer on Mobility Enhancement in GaAs-(Alga)as Super-Lattices_X=x6s02.3.3X=x6s Applied Physics LettersX=x6s Article$M_\\Aeron\Procite Databases\WCS\Articles\Hickmott TW 1985 04.pdf'XhH9XXeF=`Lwԫ+122$M_|@_t60710^N~Q2;@fITan, T. Y. //Gosele, U. P=vԫjDuke Univ,Dept Mech Engn & Mat Sci/Durham//Nc/27706 ; Microelectr Ctr N Carolina/Res Triangle Pk//Nc/27709jP=vԫVMechanisms of Doping-Enhanced Superlattice Disordering Gallium Self-Diffusion in GaAsVP=vԫ08.1.1P=vԫ Applied Physics LettersP=vԫ Article$M_|@_t 1988 Apr 11 =vԫ52$M_|@_t15$M_|@_t 1240-1242 $M_|@_t%>\\As01mesant\Procite Databases\WCS\Articles\Tan TY 1988 04.pdf,X{hH9XXF=vԫ+118$M_|@_t18790;@zI!Tan, T. Y. //Gosele, U. //Yu, S. !B=(t|X#Duke Univ,Sch Engn/Durham//Nc/27706#B=(t|XePoint-Defects, Diffusion Mt Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801=`Lwԫ`Negative Charge, Barrier Heights, and the Conduction-Band Discontinuity in AlxGa1-xAs Capacitors`=`Lwԫ02.1.3=`Lwԫ Journal of Applied Physics=`Lwԫ Article$M_|@_t 1985 Apr 15=`Lwԫ=`Lwԫ57$M_|@_t8$M_|@_t 2844-2853 $M_|@_t32$M_|@_t%>\\Aeron\Procite Databases\WCS\Articles\Hickmott TW 1985 04.pdf'XhH9XXAqN~,4h variety of quantum and finite temperature phase transitions in these systems. In particular, we show that a magnetic field oriented parallel to the layers induces a highly collective commensurate-incommensurate phase transition in the magnetic order.9$M_:;@_;KT+107$M_:;@_;KT,LStrong Magnetic-Field/ Electron-System/ Energy-Spectrum/ Sy Dstem/ States/ GasL$M_:;@_;KT19040u;@5Sood, A. K. //Menendez, J. //Cardona, M. //Ploog, K. 5x=Pw9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9x=Pw6Interface Vibrational-Modes in GaAs-AlAs Superlattices6x=Pw04.2.3x=Pw Physical Review Lettersx=Pw Article*$M_35@_56* 1985 May 13 *$M_35@_56*54*$M_35@_56*19*$M_35@_56* 2115-2118 *$M_35@_56*%@\\As01mesant\Procite Databases\WCS\Articles\Sood AK 1985 05b.pdf@*$M_35@_56*+291*$M"_35@_56*7680Ht=Ht =Ht=Ht=Ht04.2.3=Ht=Ht =Ht=Ht=Ht04.2.3=Ht=Ht =Ht=Ht=Ht04.2.3=4d:j V2,;@J9Vantuyl, R. L. //Liechti, C. A. //Lee, R. E. //Gowen, E. 9=qg&Hewlett Packard Co/Palo Alto//Ca/94304&=qg'GaAs Mesfet Logic With 4-Ghz Clock Rate'=qg09.1.1=qg $IEEE Journal of Solid-State Circuits$=qg Article$M_@_u1977$M_@_u12$M_@_u5$M_@_u485-496$M_@_u%@\\As01mesant\Procite Databases\WCS\Articles/Van Tuyl RL 1977.pdf@=qg+127$M_@_u18960;@JWaldrop, J. R. //Grant, R. W. T=v0,Rockwell Int,Ctr Sci/Thousand Oaks//Ca/91360,T=v0;Interface Chemistry of Metal-GaAs Schottky-Barrier Contacts;T=v002.2T=v0 Applied Physics LettersT=v0 ArticleÀ$M_<̀,΀@_$΀f<À1979À$M_<̀,΀@_$΀f<À34À$M_<̀,΀@_$΀f<À10À$M_<̀,΀@_$΀f<À630-632$M_<̀,΀@_$΀f<À%?\\As01mesant\Procite Databases\WCS\Articles/Waldrop JR 1979.pdf?À$M_<̀,΀@_$΀f<À+117À$M_<̀,΀@_$΀f<À18970;1?`JRYang, K. //Moon, K. //Zheng, L. //Macdonald, A. H. //Girvin, S. M. //Zhang, S. C. R`=x8q2Indiana Univ,Dept Phys/Bloomington//in/47405 ; Univ Tokf.^N~2$;@`JRYang, K. //Moon, K. //Zheng, L. //Macdonald, A. H. //Girvin, S. M. //Zhang, S. C. R`=x8q2Indiana Univ,Dept Phys/Bloomington//in/47405 ; Univ Tokyo,Coll Arts & Sci,Inst Phys,Meguro Ku/Tokyo ; Ibm Corp,Almaden Res Ctr/San Jose//Ca/95120 ; Stanford Univ,Dept Phys/Stanford//Ca/94305`=x8q2QQuantum Ferromagnetism and Phase-Transitions in Double-Layer Quantum Hall Systems7`=x8q2`=x8q2`=x8q204.1.3`=x8q2 Physical Review Letters`=x8q2 Article$M_:;@_;KT Jan 31, 1994 $M_:;@_;KT72$M_:;@_;KT5$M_:;@_;KT732-735$M_:;@_;KT%>\\As01mesant\Procite Databases\WCS\Articles\Yang K 1994 01.pdf,$M_:;@_;KT$M_:;@_;KT*9Double-layer quantum Hall systems have interesting properties associated with interlayer correlations. At nu = 1/m where m is an odd integer they exhibit spontaneous symmetry breaking equivalent to that of spin 1/2 easy-plane ferromagnets, with the layer degree of freedom playing the role of spin. We explore the rich variety of quantum and finite temperature phase transitions in these systems. In particular, we show that a magnetic field oriented parallel to the layers induces a highly collective commensurate-inu;1?5Sood, A. K. //Menendez, J. //Cardona, M. //Ploog, K. 5x=Pw9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9x=Prt 80//Fed9=Hst Festkorperforsch/D-7000 Stuttgart 80//Fed9=H^N~q<u;@ 5Sood, A. K. //Menendez, J. //Cardona, M. //Ploog, K. 5=Ht9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9=HtSResonance Raman-Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices(=Ht=Ht=Ht=Ht =Ht=Ht=Ht04.2.3=Ht Physical Review Letters=Ht Article9$M_BD@_D9 1985 May 13 9$M_BD@_D9549$M_BD@_D9199$M_BD@_D9 2111-2114 9$M_BD@_D9%@\\As01mesant\Procite Databases\WCS\Articles\Sood AK 1985 05a.pdf@[9$M_BD@_D9+2959$M_BD@_D97690;1?KiGrober, R. D. //Harris, T. D. //Trautman, J. K. //Betzig, E. //Wegscheider, W.//Pfeiffer, L.//West, K. W.iH~=xw%/At&T Bell Labs,600 Mt Ave/Murray=xw% Article$M_@_> Mar 14, 1994 $M_@_>64$M_@_>11$M_@_> 1421-1423 $M_@_>%<\\Aeron\Procite Databases\WCS\Articles\Grober RD 1994 03.pdf<$M_@_>*We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/ng a low temperature near-field scanning optical microscope. We have studied an array of GaAs/^QN~242;@KiGrober, R. D. //Harris, T. D. //Trautman, J. K. //Betzig, E. //Wegscheider, W.//Pfeiffer, L.//West, K. W.iH~=xw%/At&T Bell Labs,600 Mt Ave/Murray Hill//Nj/07974/H~=xw%_Optical Spectroscopy of a GaAs/AlGaAs Quantum-Wire Using Near-Field Scanning Optical Microscopy_H~=xw%03.4.1=xw% Applied Physics LettersH~=xw% Article$M_@_> Mar 14, 1994 $M_@_>64$M_@_>11$M_@_> 1421-1423 $M_@_>%A\\As01mesant\Procite Databases\WCS\Articles\Grober RD 1994 03.pdfA$M_@_>*We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)-oriented multiple quantum wells, the (110)-oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)-oriented single quantum well. Quenching of the multiple quantum wells and single qu;=?,L$Harder, C. //Lau, K. Y. //Yariv, A. $x=`nzȒ:Caltech/Pasadena//Ca/91125 ; Ortel Corp/Alhambra//Ca/91803:x=`nzȒWBistability and Pulsations in Semiconductor-Lasers With Inhomogeneous Current InjectionWx=`nzȒ10.2.5x=`nzȒ #IEEE Journal of Quant[Microwave Performance of a 0.25 Mu-M Gate AlGaN/GaN Hete̬[Microwave Performance of a 0.25 Mu-M Gate AlGaN/GaN Hete^N~2Lj.=@WKhan, M. A. //Kuznia, J. N. //Olson, D. T. //Schaff, W. J. //Burm, J. W. //Shur, M. S. W(=vj̬Apa Opt Inc,2950 Ne 84th Lane/Blaine//Mn/55434 ; Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853 ; Univ Virginia,Dept Elect Engn/Charlottesville//Va/22903(=vj̬[Microwave Performance of a 0.25 Mu-M Gate AlGaN/GaN Heterostructure Field-Effect Transistor[(=vj̬09.1.4(=vj̬ Applied Physics Letters(=vj̬ Article$M_D@_j Aug 29, 1994 $M_D@_j65$M_D@_j9$M_D@_j 1121-1123 $M_D@_j%?\\As01mesant\Procite Databases\WCS\Articles\Khan MA 1994 08.pdf?^=vj̬*We fabricated a 0.25 mum gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance. The device exhibited an excellent pinch-off and a low parasitic output conductance in the saturation regime. We measured the cutoff frequency f(T) and the maximum oscillation frequency f(max) as 11 and 35 GHz, respectively. These values are sf>h1?Dean, P.J.//Henry, C.H.=سtu<OElectron-Capture (Internal) Luminescence from Oxygen Donor in Gallium PhosphideO=سtu<,01.4.3 "Deep" Localized-Wave-Function Levels,=سtu< Physical Review=سtu<AMERICAN PHYSICAL SOC$M_ԹĻ^N~8D2f and a low parasitic output conductance in the saturation regime. We measured the cutoff frequency f(T) and the maximum oscillation frequency f(max) as 11 and 35 GHz, respectively. These values are superior to the highest reported values for field effect transistors based on other wide band-gap semiconductors such as SiC. These results demonstrate an excellent potential of AlGaN/GaN HFETs for microwave and millimeter wave applications.$M_D@_j+121$M_D@_j,Gallium Nitride$M_D@_j7320f>@Dean, P.J.//Henry, C.H.=سtu<OElectron-Capture (Internal) Luminescence from Oxygen Donor in Gallium PhosphideO=سtu<,01.4.3 "Deep" Localized-Wave-Function Levels,=سtu< Physical Review=سtu<AMERICAN PHYSICAL SOC$M_ԹĻ@_Hq԰1968$M_ԹĻ@_Hq԰176$M_ԹĻ@_Hq԰3$M_ԹĻ@_Hq԰928-937=سtu<=سtu<%?\\As01mesant\Procite Databases\WCS\Articles\Dean PJ 1968 12.pdf?$M_ԹĻ@_Hq԰' 0031-899X $M_ԹĻ@_Hq԰)5;h1?JLHarrison, W. A. #=0r̬kStanford Univ,Dept Appl Phys/Stanford//Ca/94305 ; Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fedk#=0r̬Theory of the 2-Center Bond#=0r̬01.2.1 Bonds and Energiesm=0r̬ "Physical Review B-Condensed Matte(=s2@ ArticleXHx2\;@^LHarrison, W. A. (=s2@/Stanford Univ,Dept Appl Phys/Stanford//Ca/94305/(=s2@&Theory of Polar Semiconductor Surfaces&(=s2@06.2.2(=s2@ &Journal of Vacuum Science & Technology&(=s2@ Article$M_$\@_TZ%  1979 Sep-Oct $M_$\@_TZ% 16$M_$\@_TZ% 5$M_$\@_TZ%  1492-1496 $M_$\@_TZ% 13$M_$\@_TZ% %C\\As01mesant\Procite Databases\WCS\Articles\Harrison WA 1979 09.pdfC$M_$\@_TZ% +152$M#_$\@_TZ% 19550;@|LHarwit, A. //Harris, J. S. 0=hr<{ԫ5Stanford Univ,Stanford Electr Labs/Stanford//Ca/9430550=hr<{ԫDObservation of Stark Shifts in Quantum-Well Intersubband TransitionsD0=hr<{ԫ04.3.30=hr<{ԫ Applied Physics Letters0=hr<{ԫ Article$M_@_m̿ 1987 MAR 16 $M_@_m̿50$M_@_m̿11$M_@_mrginia,Dept Elect Engn/Charlottesville//Va/22903 ; Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853=vm̬Temperature Activated Conductance in GaN/AlGaN Heterostructure Field-Effect Transistors Operating at Temperatures up to 300-Degrees-C=vm̬09.1.4=vm̬ Applied Physics LetterssApplied Physics LettersIyN~Td̿685-687$M_@_m̿%@\\As01mesant\Procite Databases\WCS\Articles\Harwit A 1987 03.pdf,hH9XXF8p=hr<{ԫ+7187$M_@_m̿19580j.=@MKhan, M. A. //Shur, M. S. //Kuznia, J. N. //Chen, Q. //Burm, J. //Schaff, W. M=vm̬Apa Inc,Apa Opt,2950 Ne 84th Lane/Blaine//Mn/55449 ; Univ Virginia,Dept Elect Engn/Charlottesville//Va/22903 ; Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853=vm̬Temperature Activated Conductance in GaN/AlGaN Heterostructure Field-Effect Transistors Operating at Temperatures up to 300-Degrees-C=vm̬09.1.4=vm̬ Applied Physics Letters=vm̬ Article$M_L@_m Feb 27, 1995 $M_L@_m66$M_L@_m9$M_L@_m 1083-1085 $M_L@_m%?\\As01mesant\Procite Databases\WCS\Articles\Khan MA 1995 02.pdf?%=vm̬+120$M"_L@_m7330 America B-Optical Physics ;=p_=XaqrX Article$M_@_zt1985 07$M_@_zt2$M_@_ America B-Optical Physics ;=p_=XaqrX Article$M_@_zt1985 07$M_@_zt2$M_@_ America B-Optical Physics ;=p_=XaqrX Article$M_@_zt1985 07$M_@_zt2$M_@_@_zt19710'W-]\2 ;@LHaug, H. //Schmittrink, S. p_=XaqrX:Univ Frankfurt,Inst Theoret Phys,Robert Mayer Str 8/D-6000:p_=XaqrXSBasic Mec hanisms of the Optical Nonlinearities of Semiconductors Near the Band EdgeSp_=XaqrX05.1.3p_=XaqrX =Journal of the Optical Society of America B-Optical Physics ;=p_=XaqrX Article$M_@_zt1985 07$M_@_zt2$M_@_ zt7$M_@_zt 1135-1142 p_=XaqrX%>\\As01mesant\Procite Databases\WCS\Articles/Haug H 1986 07.pdf>$M_@ E_zt+107$M_@_zt19710 ;@M>Haug, R. J. //Macdonald, A. H. //Streda, P. //Vonklitzing, K. >г=sTl9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9г =sTlLQuantized Multichannel Magnetotransport Through a Barrier in Two DimensionsLг=sTl02.5.4г=sTl г=sTl Physical Review Lettersг=sTl Article$M_ @_RP 1988 Dec 12 $M_ @_RP j.=1?IKuech, T. F. //Tischler, M. A. //Wang, P. J. //Scilla, G. //Potemski, R. I ="ujG1Ibm Corp,Thomas J Watson Res Ctr,Pob 218/Yorktown1 ="ujGDControlled Carbon Doping of GaAs by Metalorganic Vapor-Phase EpitaxyD ="ujG06.4.2 ="ujG Applied Phys$M_4l @_d `<T ;kN~hD*t tion in the quantum Hall effect. The value of nu = 2.3 +/- 0.1 agrees with recent numerical studies for the lowest Landau level. The measured value of the temperature exponent of the inelastic-scatter ing rate is found to range from p = 2.7 +/- 0.3 to p = 3.4 +/- 0.4.hX$M_Z\@_\ X+119X$M_Z\@_\ X,6Magnetic-Field/ Localization/ Delocalization =/ Currents6X$M_Z\@_\ X19920 ;@MKodama, Y. //Hasegawa, A. N=rȒSOhio State Univ,Dept Math/Columbus//Oh/43210 ; at&T Bell Labs/Murray Hill//Nj/07974SN=r Ȓ4Nonlinear Pulse-Propagation in a Monomode Dielectric4N=rȒ05.2.6N=rȒ #IEEE Journal of Quantum Electronics# N=rȒ Article$M_@_1987 05$M_@_$M_@_23$M_ @_5$M_@_510-524$M_@_%@\\As01mesant\Procite Databases\WCS\Articles/Kodama Y 1987 05.pdf@$M_ K@_+194$M_@_19940=oqX =oqX)Quantum effects in heterostructure lasers)=oqX10.2.1=oqX706518=oqX US3982207 =oqXUS=oqX 9/21/1976 =oqX US3982207 =oqXUS3691476 US3911376=oqX3cl|<@Dingle, R.//Henry, C.H. =oqX=oqX =oqX)Quantum effects in heterostructure lasers)=oqX10.2.1=oqX706518=oqX US3982207 =oqXUS=oqX 9/21/1976 =oqX US3982207 =oqXUS3691476 US3911376=oqX Quantum States of Confined Carriers, Etc.,R. Dingle et al., Physical Review Letters, vol. 33, No. 14, 9-30-74, pp. 827-830. Ga.sub.1.sub.-x Al.sub.x A.sub.s Superlattices Profiled, etc.,R. Ludeke et al., Applied Physics Letters, vol. 24, No. 9, 5-1-74, pp. 417-419. =oqX"qUS4080617 US4138274 US4270094 US4341570 US4217598 US4222791 US4578127 US4590501 US4644378 US4671830 US4801993 US4814837 US5313324 US5422533 US4205329 US4212020 US4528464 US4577321 US4691320 US4701774 US4257055 US4261771 US4675709 US4678989 US4860068 US4897699 US4599728 US4631730 US5049955 US5081633 US4378255 US4525687 US4745452 US4766470 US4953170 US5023944 US5687185q=oqX%;\\As01mesant\Procite Databases\WCS\Patents\US03982207__.pdf;=oqX'H01S 3/0=oqX+37=oqX490;=?*NN?Levi, A. F. J. //Hayes, J. R. //Platzman, P. M. //Wiegmann, W. ?HHBLAt&T Bell Labs/Murray Hill//Nj/07974 ; Bell Commun Res/Murray Hill//Nj/079-Carrier Scattering: Response to Ultrashort Optical PulsesRHHB Physical Review LettersHHB ArticleHHB0n1985 November 4HHB0n55HHB0n19HHB0n 2071-2073 HHB0n%;\\Aeron\Procite Databases\WCS\Ar|ticles\Levi AFJ 1985 11.pdf;HHB0n+142HHB0n20030u;1?*Vina, L. //Logothetidis, S. //Cardona, M. *4=Pn7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700074=PnN~Q2u;@*Vina, L. //Logothetidis, S. //Cardona, M. *4=Pn7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700074=Pn>Temperature-Dependence of the Dielectric Function of germanium>4=Pn05.1.17=Pn7=Pn "Physical Review B-Condensed Matter"4=Pn ReviewS$M_\^@_^S1984 August 15S$M_\^@_^S30S$M_\^@_^S4S$M_\^@_^S 1979-1991 S$M_\^@_^S%>\\As01mesant\Procite Databases\WCS\Articles\Vina L 1984 08.pdf>S$M_\M^@_^S+204S$M_\^@_^S7860rNormal Incidence Hole Intersubband Absorption Long Wavelength GaAs/AlxGa1-xAs Quantum-Well Infrared Photodetectorsr=(tF04.3.3 Applied Physics LetterrNormal Incidence Hole Intersubband Absorption Long Wavelength GaAs/AlxGa1-xAs Quantum-Well Infrared Photodetectorsr=(tF04.3.3 Applied Physics Letterz%<\\Aeron\Procite Databases\WCS\Articles\Levine BF 1991 10.pdf<=(tF*CThe first long wavelength quantum well infrared photodetector based on valence band intersubband absorption holes is demonstrated. A normal incidence quantum efficiency of eta = 28% and detectivity of D-lambda* = 3.1 x 10(10) cm square-root Hz/W at T = 77 K, for a cutoff wavelength lambda-c = 7.9-mu-m, have been achieved.C$M_l@_z+113$M_l@_zC$M_l@_z+113$M_l@_z^CsN~;@HNDLevine, B. F. //Gunapala, S. D. //Kuo, J. M. //Pei, S. S. //Hui, S. D=(tF$At&T Bell Labs/Murray Hill//Nj/07974$=(tFrNormal Incidence Hole Intersubband Absorption Long Wavelength GaAs/AlxGa1-xAs Quantum-Well Infrared Photodetectorsr=(tF04.3.3 Applied Physics Letters=(tF Article$M_l@_z 1991 Oct 7 $M_l@_z59$M_l@_z15$M_l@_z 1864-1866 $M_l@_z%A\\As01mesant\Procite Databases\WCS\Articles\Levine BF 1991 10.pdfA=(tF*CThe first long wavelength quantum well infrared photodetector based on valence band intersubband absorption holes is demonstrated. A normal incidence quantum efficiency of eta = 28% and detectivity of D-lambda* = 3.1 x 10(10) cm square-root Hz/W at T = 77 K, for a cutoff wavelength lambda-c = 7.9-mu-m, have been achieved.C$M_l@_z+113$M_l@_Bz,Band$M_l@_z20040<Ӯ1?0NFan, Z. F.//Mohammad, S. N.//Kim, W.//Aktas, O.//Botchkarev, A. E.//Morkoc, H.Nm=rTqoUniv Illinois,Mat Res Lab,104 S Goodwin Ave,Urbana,Il 61801q Applied Physics Lettersm=rTq Article1$M_: <@_<v1 Mar 18, 1996 1$M_: <@_<v1681$M_: <@_<v1121$M_: <@_<v1 1672-1674 1$M_: <@_<v1141$M_: <@_<v160720^8N~2<@0NFan, Z. F.//Mohammad, S. N.//Kim, W.//Aktas, O.//Botchkarev, A. E.//Morkoc, H.Nm=rTqoUniv Illinois,Mat Res Lab,104 S Goodwin Ave,Urbana,Il 61801 ; Univ Illinois,Coordinated Sci Lab,Urbana,Il 61801om=rTq5Very Low Resistance Multilayer Ohmic Contact to N-GaN4xt=rTqxt=rTq08.3.2xt=rTq Applied Physics Lettersm=rTq Article1$M_: <@_<v1 Mar 18, 1996 1$M_: <@_<v1681$M_: <@_<v1121$M_: <@_<v1 1672-1674 1$M_: <@_<v1141$M_: <@_<v1%>\\As01mesant\Procite Databases\WCS\Articles\Fan ZF 1996 03.pdf>1$M_: <@_<v1*A new metallization scheme has been developed for obtaining very low Ohmic contact to n-GaN. The metallization technique involves the deposition of a composite metal layer Ti/Al/Ni/Au (150 Angstrom/2200 Angstrom/400 Angstrom/500 Angstrom) on n-GaN preceded by a reactive ion etching (RIE) process which most likely renders the surface highly n type. Of the several attempts and with annealing at 900 degrees C for 30 s, contacts with specific resistivity va;h1?zNMaude, D. K. //Portal, J. C. //Dmowski, L. //Foster, T. //Eaves, L. //Nathan, M. I.//Heiblum, M.//Harris, J. J. //Beall, R. B. -=p Univ Nottingham,Dept Phys/Nottingham Ng7 2rd//England ; Inst Natl Sci Appl Lyon,Dept Genie Phys/F-31077 ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown H^N~22ts//Ny/10598 ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England-=p 6Investigation of the Dx Center in Heavily Doped n-GaAs6-=p 01.5.2 Metastable Centers: dx-=p -=p  Physical Review Letters-=p  Article$M_$@_|1987 August 17$M_$@_|59$M_$@_|7$M_$@_|815-818$M_$@_|%@\\As01mesant\Procite Databases\WCS\Articles\Maude DK 1987 08.pdf@$M_$@_|+111$M_$@_|20090<@:FLin, M. E.//Ma, Z.//Huang, F. Y.//Fan, Z. F.//Allen, L. H.//Morkoc, H.Fm=rmUniv Illinois,Mat Lab,104 S Goodwin Ave/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801mm=r2Low-Resistance Ohmic Contacts on Wide Band-Gap GaN1u=ru=(=^@5?$ Ota, Hiroyuki//Watanabe, Atsushi 8=vp#Semiconductor light emitting device#8=vp12.08=vpPioneer Electronic Corporation8=vp4416258=vp US5173751 8=vpJP8=vp 12/22/1992 8=vp;EP0496030A2 EP0496030A3 JP04236477A2 JP04236478A2 US5173751;8=vp;US4386 JP04236478A2 US5173751;8=vp;US4386;US4386O?~23tigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900-degrees-C in a N2 ambient using rapid thermal annealing techniques. The lowest value for the specific contact resistivity of 8X10(-6) OMEGA CM2, was obtained using Ti/Al metallization with anneals of 900-degrees-C for 30 s. X-ray diffraction and Auger electron spectroscopy depth profile were employed to investigate the metallurgy of contact formation.K$M_\L@ E_D4\+146$M_\L@_D4\60730(=@$ Ota, Hiroyuki//Watanabe, Atsushi 8=vp#Semiconductor light emitting device#8=vp12.08=vpPioneer Electronic Corporation8=vp4416258=vp US5173751 8=vpJP8=vp 12/22/1992 8=vp;EP0496030A2 EP0496030A3 JP04236477A2 JP04236478A2 US5173751;8=vp;US4386295 US4697202 US4903088 US5006908 US5076860 US5078803;8=vp"US5237182 US5239188 US5442201 US5620557 US5633192 US5677538 US5686738 US5689123 US5725674 US5747832 US5751021 US5804834 US5825052 US5847397 US5866440 US5923054 US5937274 US5985687 US6009114 US6078063 US6100546 US6123768 US6130147 US6215133 US63424058=vp%;\\As01mesantf>h1?7Manchon, D.D.//Barker, A.S.//Dean, P.J.//Zetterst, R.B.75=tbVX;Optical Studies of Phonons and Electrons in Gallium Nitride;5 ;k~ics, Oct. 1984, pp. 2367-2368.; Fitzl, et al., ""Epitaxial Growth of GaN on (1012) oriented Sapphire in GaCl/NH.sub.3 /He and GaCl/NH.sub.3 /H.sub.2 Systems"", Crystal Research and Technology, vol. 15, No. 10, 1980, pp. 1143-1149.; Amano, et al., ""Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer"", Applied Physics Letters, Feb. 1986, vol. 48, No. 5, p p. 353-355.; Gaskill, et al., ""Growth of GaN films using trimethylgallium and hydrazine"", Applied Physics Letters, vol. 48, No. 21, May 1986, pp. 1449-1451."R5=HoB "US5633192 US5656832 US5665986 US5677538 US5686738 US5725674 US5733796 US5739554 US5756374 US5804839 US5847397 US5880485 US5929466 US5962875 US6080599 US6120600 US6123768 US6249012 US6265322 US628439 5 US63620175=HoB%;\\As01mesant\Procite Databases\WCS\Patents\US05218216__.pdf;5=HoB'"H01L 33/0, H01L 29/4"5 J=HoB+215=HoB638003=o0 &Photoluminescence of AlxGa1-xAs Alloys&3=o0 05.1.23=o0  Journal of Applied Physics3=o0 &Photoluminescence of AlxGa1-xAs Alloys&3=o0 05.1.23=o0  Journal of Applied Physicsg from the energy band gap down to congruent-to 0.8 eV, doping densities from isolated impurities to strongly interacting impurities (heavy-doping effects) and lattice temperatures from 2 to 300 K. The relevance of photoluminescence as a simple but very powerful characterization technique is stressed also in comparison with ^@pN~23(=@8AManabe, K.//Okazaki, Nobuo//Akasaki, I.//Hiramatsu, K.//Amano, H.55=HoB5=HoB 5=HoBpGallium nitride group semiconductor and light emitting diode comprising it and the process of producing the samep5=HoB07.55=HoB)Toyoda Gosei Co., Ltd.; Nagoya University)5=HoB5824405=HoB US5218216 5=HoBJP; JP5=HoB6/8/19935=HoBDE3850582C0 DE3850582T2 DE3852402C0 DE3852402T2 EP0277597A2 EP0277597A3 EP0277597B1 EP0460710A2 EP0460710A3 EP0460710B1 JP05073252B4 JP07009999B4 JP63188938A2 JP63188977A2 US52182165=HoBUS3683240 US3969753 US4001858 US4065750 US4111725 US4152182 US4207586 US4404265 US4408217 US4473938 US4608581 US4614961 US4700215 US4855249 US49080745=HoBR"Shintani, et al., ""X-Ray Diffraction Topography and Crystal Characterization of GaN . . . "", J. of Electrochemical Soc., vol. 125, # 12 (Dec. 1978), pp. 2076-2078.; Kawabata, et al., ""GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition"", J. of Applied Phys;1?NPavesi, L. //Guzzi, M. 3=o0 hUniv Trent,Dipartimento Fis,Via Sommarive 14/I-38050 ; Univ Milan,Dipartimento Fis/I-20133 Milan//Italyh3=o0 &Photoluminescence of AlxGa1-xAs Alloys&3=o0 05.1.23=o0  Journal of Applied Physicsvery powerful characterization technique is stressed also in comparison with ^N~2 3with other experimental methods. The most recent determinations of the Al concentration dependence of some physical properties of the alloy (energy gaps, carrier effective masses, dielectric constants, phonon energies, donor and acceptor binding energies, etc.) are given. The main physical mechanisms of the radiative recombination process in semiconductors are summarized with particular emphasis o n the experimental data available for AlxGa1-xAs. The effects of the nature of the band gap (direct or indirect) on the features of the photoluminescence spectra are discussed in detail. Particular at tention is devoted to the consequences of the band structure of AlxGa1-xAs (both the multivalley conduction band or the degenerate valence band) on the impurity states by summarizing the theoretical p redictions and by detailing the behavior of a number of shallow impurities. Heavy doping effects are also analyzed. A systematic presentation of the photoluminescence related to deep defects and impur ities (vacancies, antisites, DX centers, Si-Si self-compensating pairs, transition metals, and rare-earth ions) is carried out after a brief introduction to the terminology used to describe the deep s tates in semiconductors.$M_@_ +165$M_@_ ,Molecular-Beam Epitaxy/ Iii-V-Semiconductors/ Minority- Lifetime/ Chemical Vapor-Deposi;1?O%Schmittrink, S. //Ell, C. //Haug, H. %/=oRaAt&T Bell Labs/Murray Hill//Nj/07974 ; Univ Frankfurt,Inst Theoret Phys/D-6000 Frankfurt//Fed Repa/=oR`Many-Body Effects in the Absorption, Gain, and Spectra of Semiconductor Quantum-Well Structures`/=oR03.3.1^N~2;@NPavesi, L. //Guzzi, M. 3=o0 hUniv Trent,Dipartimento Fis,Via Sommarive 14/I-38050 ; Univ Milan,Dipartimento Fis/I-20133 Milan//Italyh3=o0 &Photoluminescence of AlxGa1-xAs Alloys&3=o0 05.1.23=o0  Journal of Applied Physics3=o0  Review$M_@_ 1994 05$M_@_ $M_@_ 75$M_@_ 10/Pt.1$M_@_  4779-4842 $M_@_ %@\\As01mesant\Procite Databases\WCS\Articles\Pavesi L 1994 05.pdf@$M_@_ *A thorough discussion of the various features of the photoluminescence spectra of undoped, p-doped and n-doped AlxGa1-xAx(0 less-than-or-equal-to x less-than-or-equal-to 1) alloys is given. This review covers spectral features in the energy region ranging from the energy band gap down to congruent-to 0.8 eV, doping densities from isolated impurities to strongly interacting impurities (heavy-doping effects) and lattice temperatures from 2 to 300 K. The relevance of photoluminescence as a simple but very powerful characterization technique is stressed also in comparison ;1?O%Schmittrink, S. //Ell, C. //Haug, H. %/=oRaAt&T Bell Labs/Murray Hill//Nj/07974 ; Univ Frankfurt,Inst Theoret Phys/D-6000 Frankfurt//Fed Repa/=oR`Many-Body Effects in the Absorption, Gain, and Spectra of Semiconductor Quantum-Well Structures`/=oR03.3.1z H 1987.pdf7$M_YTZ@_LZ\+135$M_YTZ@_LZ\20280^N~' 3*;@8OCStatz, H. //Newman, P. //Smith, I. W. //Pucel, R. A. //Haus, H. A. C=r\Raytheon Co,Div Res/Lexington//Ma/02173 ; Mit,Dept Elect Engn & Comp Sci/Cambridge//Ma/02139\=r/GaAs-Fet Device and Circuit Simulation in Spice/=r09.1.1=r=r %IEEE Transactions on Electron Devices%=r Article$M_YTZ@_LZ\1987 Feb$M_YTZ@_LZ\34$M_YTZ@_LZ\2$M_YTZ@_LZ\160-169$M_YTZ@_LZ\%<\\As01mesant\Procite Databases\WCS\Artwicles/Statz H 1987.pdf<$M_YTZ@_LZ\+135$M_YTZ@_LZ\20280XFH(=P{ԫH(=P{ԫ+159$M_@_|20380icles\Trankle G 1987 01.pdf'@/hH9X@_|4$M_@_|419-422$M_@_|%<\\Aeron\Procite Databases\WCS\Articles\Trankle G 1987 01.pdf'@/hH9XRenormalization Two-Dimensional and 3-Dimensional Electron-Hole Plasmas inu`y=P{ԫ02.4.2`y=P{ԫ Physical Review Letterson\Procite Databases\WCS\Articles\Trankle G 1987 01.pdf'@/hH9XXFH(=P{ԫH(=P{ԫ+159$M_@_|20380H(=P{ԫH(=P{ԫ+159$M_@_|20380=vԫ03.1.2=)=mhN~&*3;@OcVanstryland, E. W. //Vanherzeele, H. //Woodall, M. A. //Soileau, M. J. //Guha, S. //Boggess, T. F. c4=r&/N Texas State Univ,Ctr Appl Quantum Electr,Dept/4=r&I2 Photon-Absorption, Nonlinear Refraction, and Optical in SemiconductorsI4=r&05.1.34=r& Optical Engineering4=r& Article$M_@_41985$M_@_424$M_@_44$M_@_4613-623$M_@_4%F\\As01mesant\Procite Databases\WCS\Articles/VanStryland EW 1985 08.pdf,$xM_@_4$M_@_4+172$M_@_420400ticles\Warwick CA 1990 06.pdf'XhH9XXF=vԫ+138$M_@_20420%=\\Aeron\Procite Databases\WCS\Articles\Warwick CA 1990 06.pdf'XhH9XXF=vԫ+138$M_@_20420%=\\Aeron\Procite Databases\WCS\Articles\Warwick CA 1990 06.pdf'XhH9XXF=vԫ+138$M_@_20420%=\\Aeron\Procite Databases\WCS\Articles\Warwick CA 1990 06.pdf'XhH9XXF=vԫ+138$M_@_20420%=\\Aeron\Procite Databases\WCS\Articles\Warwick CA 1990 06.pdf'XhH9XXF=vԫ+138$M_@_20420JzN~33<@DQShewchuk, T. J.//Chapin, P. C.//Coleman, P. D.//Kopp, W.//Fischer, R.//Morkoc, H.Q=`%vԫfUniv Illinois,Dept Elect & Comp Engn/Urbana//Il/61801 ; Univ Illinois,Electrophys Lab/Urbana//Il/61801f=`%vԫXResonant Tunneling Oscillations in a GaAs-AlxGa1-xAs Heterostructure at Room-TemperatureX=`%vԫ04.1.1.4=`%vԫ Applied Physics Letters=`%vԫ Article$M_<lV@_dV | 1985 Mar 1=`%vԫ=`%vԫ46$M_<lV@_dV |5$M_<lV@_dV |508-510$M_<lV@_dV |11$M_<lV@_dV |%C\\As01mesant\Procite Databases\WCS\Articles\Shewchuk TJ 1985 03.pdf,XhH9XXF=`%v@ԫ+120$M_<lV@_dV |60740 C$M_DL4N@_,NVDC1984C$M_DL4N@_,NVDC31C$M_DL4N@_,NVDC8C$M_DL4N@_,NVDC 1015-1027 C C$M_DL4N@_,NVDC1984C$M_DL4N@_,NVDC31C$M_DL4N@_,NVDC8C$M_DL4N@_,NVDC 1015-1027 C C$M_DL4N@_,NVDC1984C$M_DL4N@_,NVDC31C$M_DL4N@_,NVDC8C$M_DL4N@_,NVDC 1015-1027 C C$M_DL4N@_,NVDC1984C$M_DL4N@_,NVDC31C$M_DL4N@_,NVDC8C$M_DL4N@_,NVDC 1015-1027 CM_@_ 306fN~ $3"=vrEXZStudies of Exciton Localization in Quantum-Well Structures by Nonlinear-Optical TechniquesZ0T=vrEX03.1.40T=vrE"X =Journal of the Optical Society of America B-Optical Physics ;=0T=vrEX Article$M_dZ@_\Zz1985$M_dZ@_\Z"z2$M_dZ@_\Zz7$M_dZ@_\Zz 1143-1153hJ=vrEXhJ=vrEX%>\\As01mesant"\Procite Databases\WCS\Articles/Hegarty J 1985.pdf>$M_dZ@_\Zz+139$M_dZ@_\Zz20700#;@PHeitmann, D. //Kotthaus, J. P. =u Ȓ]Univ Hamburg,Inst Appl Phys/W-2000 Hamburg 13//Germany ; Univ Munich/W-8000 Munich 2//Germany]#=u Ȓ&The Spectroscopy of Quantum-Dot Arrays&=u Ȓ04.4.4=u Ȓ=u Ȓ Ph#ysics Today =u Ȓ Article$M_$m\n@_Tn Jun 1993$M_$m\n@_Tn 46$M_$m\n@_Tn #6$M_$m\n@_Tn 56-63$M_$m\n@_Tn %=\\As01mesant\Procite Databases\WCS\Articles/Kotthaus 1993.pdf=+106$M_$m\n@_Tn #,TDimensional Electron Fluid/ Magnetic-Field/ States/ Magnetoplasmons/ Resonance/ GaasT$M_$m\n@_Tn 20720$;=?Q;Heller, A. //Aharonshalom, E. //Bonner, W. A. //Miller, B. ;=(o>K<'Bell Tel Labs Inc/Murray Hill//Nj/07974'=(o>K<Y~,3$;@Q;Heller, A. //Aharonshalom, E. //Bonner, W. A. //Miller, B. ;=(o>K<'Bell Tel Labs Inc/Murray Hill//Nj/07974'=(o>K<$rHydrogen-Evolving Semiconductor Photo-Cathodes: Nature Junction and Function of the Platinum Group Metal Catalystr=(o>K<11.3.9=(o>K$< (Journal of the American Chemical Society(=(o>K< Article$M_l\@_T2J104$M_l\@_T2J25$$M_l\@_T2J 6942-6948`o=(o>K<`o=(o>K<%=\\As01mesant\Procite Databases\WCS\Articles/Heller A 1982.pdf=$$RM_l\@_T2J+135$M_l\@_T2J20760%;@,QHeller, A. //Miller, B. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'ASome Recent Progress in Semiconductor-Liquid Junction Solar-CellsA11.3.9 Electrochimica Acta Ar%|ticle198025129-41%=\\As01mesant\Procite Databases\WCS\Articles/Heller A 1980.pdf=+10420780&;=?JQHeller, A. //Vadimsky, R. G. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'Efficient Solar to Chemical Conversion: 12-Percent Efficient Photoassisted Electrolysis in the [P-Type'Bell Tel Labs Inc/Murray Hill//Nj/07974'@/=%s8]ITheory of the Phase Noise and Power Spectr'um of a Single- Injection-LaserI@/=%s8]10.4.3@/=%s8] #IEEE Journal of Quantum Electronics#@/=%s8] eOxN~(ssion electron microscopy, surface morphology as observed by atomic force microscopy, and wavelength-resolved cathodoluminescence imaging. We show that the inhomogeneity in the luminescence intensity (of these films near band edge can be accounted for by a simple model where nonradiative recombination at threading dislocations causes a deficiency of minority carriers and results in dark regions of (the epilayer. An upper bound for average diffusion length is estimated to be 250 nm. (C) 1997 American Institute of Physics.)r$M_Henry, C. H. //Petroff, P. M. //Logan, R. A. //Merritt, F. R. >=xu'Bell Tel Labs Inc/Murray Hill//Nj/07974'=xu+GCatastrophic Damage of AlxGa1-xAs Double-Heterostructure Laser MaterialG=xu10.1.1=xu Journal of Applied Physics+=xu Article$M_?@@_@(1979$M_?@@_@(50$M_?@@_@(5$M_+?@@_@( 3721-3732 $M_?@@_@(%@\\As01mesant\Procite Databases\WCS\Articles/Henry CH 1979 05.pdf@+137$M_?@@_@(20900,;Ӯ1?Q'Hikosaka, K. //Mimura, T. //Joshin, K. '=PqD(+Fujitsu Labs Ltd,1015 Kamikodanaka,Nakahara+=PqD(3Selective Drv6f6$.v 10$M_@_v  1041-1053 $M_@_v %=\\As01mesant\Procite Databases\WCS\Articles/Ashen DJ 1975.pdf,$M_@_.v $M_@_v ' 0022-3697 $M_@_v )English Roy Radar Estab, Malvern, Worcestershire, England Stabd Telecommun Labs, Harlow , Essex, .England A1975AM58000004 Copyright 2003 SciSearch Plus $M_@_v $M_@_v $M_@_v N$M_@_.fv .$M_@_v +503$M_@_v 65000/;@QHirota, O. //Suematsu, Y. (b=p~D04Tokyo Inst Technol,Dept Phys Electr/Tokyo 152//Japan4(b=p~D0;Noise Properties/ of Injection-Lasers Due to Reflected Waves;(b=p~D010.4.3(b=p~D0 #IEEE Journal of Quantum Electronics#(b=p~/D0 Article;$M_\;L;@_D;P>\;1979;$M_\;L;@_D;P>\;15;$M_\;L;@_D;P>\;3;$M_\;L;@_D;P>\;1/42-149;$M_\;L;@_D;P>\;%@\\As01mesant\Procite Databases\WCS\Articles/Hirota O 1979 03.pdf@(b=p~D0+112;$M_\;L;@_D;P>\;0otal-Energy Calculations of Semiconductor Surface ReconstructionsB&=pt:@06.2.0&=pt:@ Surface Science Reports&0=pt:@ Review/9$M_D894:9@_,:9GD/91992/9$M_D894:9@_,:9GD/916/9$M_D894:9@_,:9GD/94-5/9$M_D894:9@_,:9,\~343 -@_b1971$M_ @_b4$M_ @_b6$M_ @_b 1926-1944j=pco|v-<j=pco|v<%?\\As01mesant\Procite Databases\WCS\Articles\Dean PJ 1971 09.pdf?$M_ @_b' 0163-1829 $M_ @_b-)5English A1971K306500030 Copyright 2003 SciSearch Plus5$M_ @_b+128$M_ @_b64990.f>@AAshen, D.J.//Dean, P.J.//Hurle, D.T.J.//Mullin, J.B.//White, A.M.A%=H3rh AIncorporation and Characterization of Acceptors in Epitaxial GaAsA.%=H3rh .01.4.2 "Shallow" Extended-Wave-Function Levels.%=H3rh  *Journal of Physics and Chemistry of Solids*%=H3rh .Pergamon Elsevier Science Ltd$M_@_v $M_@_v 1975$M_@_v 36$M_@_/ of Injection-Lasers Due to Reflected Waves;(b=p~D010.4.3(b=p~D0 #IEEE Journal of Quantum Electronics#(b=p~/D0 Article;$M_\;L;@_D;P>\;1979;$M_\;L;@_D;P>\;15;$M_\;L;@_D;P>\;3;$M_\;L;@_D;P>\;1/42-149;$M_\;L;@_D;P>\;%;\\Aeron\Procite Databases\WCS\Articles/Hirota O 1979 03.pdf;(b=p~D0+112;$M_\;L;@_D;P>\;209/60;(b=p~D0+112;$M_\;L;@_D;P>\;209/60$M_\;L;@_D;P>\;209/60</_O$<30ace reconstructions, and the existence of universal reconstructions for the zincblende- and wurtzite-structure compound semiconductor cleavage surfaces are identified and discussed./9$M_D8094:9@_,:9GD/9+133/9$M_D894:9@_,:9GD/9,Scanning-Tunneling Microscopy/ Iii-V-Semiconductors/ Electron-Diffraction Intensities/ X-Ray-Diffraction/ Angle-Resolved Photoem0ission/ Bonded Chain Model/ Consistent Pseudopotential Calculations/ Abinitio Molecular-Dynamics/ Hartree-Fock Calculations/ Ion-Beam Crystallography/9$M_D894:9@_,:9GD/9619401<@bDFischer, R.//Neuman, D.//Zabel, H.//Morkoc, H.//Choi, C.//Otsuka, N.D=@BrfXԫfUniv Illinois,1101 W Springfield Ave/Urbana//Il/61801 ; Purdue Univ,S1ch Mat Engn/W Lafayette//in/47907f=@BrfXԫ3Dislocation Reduction in Epitaxial GaAs on Si (100)3=@BrfXԫ07.5.2=1@BrfXԫ Applied Physics Letters=@BrfXԫ Article$M_@_|] 1986 May 5 $M_@_|]482m=HrKOptical Investigation of Highly Strained InGaAs-GaAs Multiple Quantum-WellsKm=Hr03.1.5}=Hr2 Journal of Applied Physicsm=Hr Article$M_|l@_d$| 1987 Oct 15 $M_|l@_d$|62$M_|2l@_d$|8$M_|l@_d$| 3366-3373 $M_|l@_d$|32$M_|l@_d$|%7\\Aeron\Procite Databases\WCS\Article2ss\Ji G 1987 10.pdf7$M_|l@_d$|+191$M_|l@_d$|21020^N~ / 209600M<@Lafemina, J. P.&=pt:@NBattelle Mem Inst,Pacific Nw Labs,Molec Sci Res Ctr,Pob 999/Richland//Wa/99352N&=pt:@BT0otal-Energy Calculations of Semiconductor Surface ReconstructionsB&=pt:@06.2.0&=pt:@ Surface Science Reports&0=pt:@ Review/9$M_D894:9@_,:9GD/91992/9$M_D894:9@_,:9GD/916/9$M_D894:9@_,:9GD/94-5/9$M_D894:9@_,:90GD/9133-260/9$M_D894:9@_,:9GD/9608/9$M_D894:9@_,:9GD/9%@\\As01mesant\Procite Databases\WCS\Articles\LaFemina JP 1992.pdf,(=pt0:@(=pt:@*In this article, the current understanding of semiconductor surface reconstructions and the role of total-energy calculations in achieving this und0erstanding is reviewed. The methods used to compute semiconductor surface reconstructions are also surveyed. Central unifying themes such as the role of topology and surface stress in determining surf0ace reconstructions, and the existence of universal reconstructions for the zincblende- and wurtzite-structure compound semiconductor cleavage surfaces are identified and discussed./9$M_D8094:9@_,:9GD/9+133/9$M_D894:9@_,:9GD/9,Scanning-Tunneling Microscopy/ Iii-V-Semiconductors/ Electron-Diffraction Intensities/ X-Ray-Diffraction/ Angle-Resolved Photoem1<u=?bDFischer, R.//Neuman, D.//Zabel, H.//Morkoc, H.//Choi, C.//Otsuka, N.D=@BrfXԫfUniv Illinois,1101 W Springfield Ave/Urbana//Il/61801 ; Purdue Univ,S191$M_|l@_d$|21020p0` <3D33u;@ 2Chang, C. C. //Citrin, P. H. //Schwartz, Bertram. *:=Ryz:=Ryz:=Ryz'Bell Tel La3bs Inc/Murray Hill//Nj/07974':=RyzlChemical Preparation of GaAs Surfaces and Their Characterization by Auger-Electron and X-Ray Spectroscopiesl:3=Ryz08.2.4:=Ryz &Journal of Vacuum Science & Technology&:=Ryz Article$M_@_nF31977$M_@_nF14$M_@_nF4$M_@_nF943-952$M_@_nF%8\\As01mesant3\Procite Databases\WCS\Articles/Chang CC.pdf8$M_@_nF+201$M_@_nF82004;@0R/Kazarinov, R. F. //Henry, C. H. //Logan, R. A. /y=8q|^'Bell Tel Labs Inc/Murray Hill//Nj/07974'y=8q|^=Xv Physical Review Letters/=Xv Physical Review Letters/=Xvq"RN~H<L36$M_vx@_|xJIm5m$M_vx@_|xJIm 2113-2132 m$M_vx@_|xJIm178m$M_vx@_|xJIm%9\\As01mesant\Procite Databa6ses\WCS\Articles/Shen 1992.pdf9/=s<=*Recent advances in the technology and understanding of ohmic contacts for a variety of III-V compound semiconductor material 6systems are reviewed. Special attention is focused on factors and critical issues involved in making low resistance and reliable ohmic contacts. The solid-phase regrowth mechanisms of key metallizatio6n systems are described. In addition, special techniques to improve the ohmic contacts are discussed. Finally, the reliability issues of ohmic contacts are addressed.m$M_vx@_|xJ6Im+88m$M_vx@_|xJIm,N-Type Gaas/ Heterojunction Bipolar-Transistors/ Molecular-Beam Epitaxy/ P-Type Gaas/ Electron-Mobility Transistors/ Strained-Layer Superlattices/6 Tin Diffusion Barrier/ Solid-Phase Regrowth/ Ingaas Cap Layer/ Thermal-Stabilitym$M_vx@_|xJIm619507$M_l\@_T6$M_l\@_T954-960$M_l\@_T%<\\Aeron\Procite Databases\WCS\Articles/Parkinson BA 1979.pdf<7$M_l\@_T6$M_l\@_T954-960$M_l\@_T%<\\Aeron\Procite Databases\WCS\Articles/Parkinson BA 1979.pdf<7$M_l\@_T6$M_l\@_T954-960$M_l\@_T%<\\Aeron\Procite Databases\WCS\Articles/Parkinson BA 1979.pdf<7$M_l\@_T6$M_l\@_T954-960$M_l\@_T%<\\Aeron\Procite Databases\WCS\Articles/Parkinson BA 1979.pdf<JzN~D345e observe discrete steps in the gate-voltage dependence of the integrated absorption strength indicating directly the incremental occupation of each dot with N = 1, 2, 3, and 4 electrons. From the gat5e-voltage dependence, we can estimate a Coulomb charging energy of about 15 meV. On a very fine scale, we also observe a spectral fine structure for the excitation of the quantum-dot atoms.y5$M_td@_\Nt+167$M_td@_\Nt,9Magnetic-Field/ Zeeman Bifurcation/ States/ Gaas/ Spectra9$M_td@_\Nt210706M<@#Shen, T. C.//Gao, G. B.//Morkoc, H.# =s<=_Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801_6 =s<=GRecent Developments in Ohmic Contacts for III-V Compound SemiconductorsG =s<=08.3.2 =s<= (J6ournal of Vacuum Science & Technology B( =s<= Reviewm$M_vx@_|xJIm Sep-Oct 1992 m$M_vx@_|xJIm10m6$M_vx@_|xJIm5m$M_vx@_|xJIm 2113-2132 m$M_vx@_|xJIm178m$M_vx@_|xJIm%9\\As01mesant\Procite Databa7;=?R+Parkinson, B. A. //Heller, A. //Miller, B. +h=zvM<'Bell Tel Labs Inc/Murray Hill//Nj/07974'h=zvM<|Effects of C7ations on the Performance of the Photoanode in N-GaAs-K2se-K2se2-Koh-C Semiconductor Liquid Junction Solar-Cell|h=zvM<11.3.9h=zvM<-Koh-C Semiconductor Liquid Junction Solar-Cell|h=zvM<11.3.9h=zvM<zvM<P@pL3L8toelectrochemical Solar-Energy Conversion Gallium-Arsenide Surface Modification\D=@r011.3.9D=@r0 Applied Physics Letters8D=@r0 Article$M_  @_ 1978$M_  @_ 33$M_  @_ 6$M_ 8 @_ 521-523$M_  @_ %A\\As01mesant\Procite Databases\WCS\Articles/Parkinson BA 1978.PDFA$M_  @_ +152$8$M_  @_ 211409<@l8Grinberg, A. A.//Shur, M. S.//Fischer, R. J.//Morkoc, H.8X2=r]Univ Minnesota,Dept Elect Engn/Minneapolis//Mn/55455 ; Univ Illinois,Dept Elect E9ngn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801X2=r]An Investigation of the Effect of Graded Layers and Tunneling on the Performance of 9AlGaAs/GaAs Heterojunction Bipolar-TransistorsX2=r]09.2.3*X2=r] %IEEE Transactions on Electron Devices%X2=9r] Article`$M_$ik@_ kxj$`1984`$M_$ik@_ kxj$`31`$M_$ik@_ kxj$`12`$M_$ik@_ kxj:;h1?RShichijo, H. //Hess, K. HHBcUniv Illinois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801cHH:B@Band-Structure-Dependent Transport and Impact Ionization in GaAs@HHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FJz~(DT39r] Article`$M_$ik@_ kxj$`1984`$M_$ik@_ kxj$`31`$M_$ik@_ kxj$`12`$M_$ik@_ kxj9$` 1758-1765 `$M_$ik@_ kxj$`15(1)`$M_$ik@_ kxj$`%@\\As01mesant\Procite Databases\WCS\Articles/Grinberg AA 1986.pdf@$=r9C]+112`$M_$ik@_ kxj$`60780:;@RShichijo, H. //Hess, K. HHBcUniv Illinois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801cHH:B@Band-Structure-Dependent Transport and Impact Ionization in GaAs@HHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric F:ieldsEHHB "Physical Review B-Condensed Matter"HHB ArticleHHB 1981 Apr 15 HH:B23HHB8HHB 4197-4207 HHB%B\\As01mesant\Procite Databases:\WCS\Articles\Shichijo H 1981 04.pdfBHHB+178HHB21210;=t+< Physical Review@=t+<AMERICAN PHYSICAL SOCY$M_btd@_ldHY1963Y$M_btd@_ldHY13;=t+< Physical Review@=t+<AMERICAN PHYSICAL SOCY$M_btd@_ldHY1963Y$M_btd@_ldHY13f9i T3\<Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801w=`rvEԫ)Theory for a Quantum Modulated Transistor)w=`rvEԫ09.1.7<w=`rvEԫ Journal of Applied Physicsw=`rvEԫ ArticleP$M_TYD[@_<[NTP 1989 Oct 15 P$M_TYD[@_<[<NTP66P$M_TYD[@_<[NTP8P$M_TYD[@_<[NTP 3892-3906 P$M_TYD[@_<[NTP%>\\As01mesant\Procite Databases\WCS\Articles\Sols <nF 1989 10.pdf>=`rvEԫ+199P$M_TYD[@_<[NTP21230=;@R1Sols, F. //Macucci, M. //Ravaioli, U. //Hess, K. 1s=8vԫUniv Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Dept Phys/Urbana//Il/=61801 ; Univ Illinois,Dept Elect & Comp Engn/Urbana//Il/61801s=8vԫOOn the Possibility of Transistor Action Based on Quantum Interference PhenomenaOs==8vԫ09.1.7s=8vԫ Applied Physics Letterss=8vԫ Articlep$M_Ty@_4Tp 1989 Jan =23 p$M_Ty@_4Tp54p$M_Ty@_4Tp4p$M_Ty@_4Tp350-352p$M_Ty@_4Tp%>\\As01mesant\Pro=cite Databases\WCS\Articles\Sols F 1989 01.pdf,XhH9X=XF=Ш=8vԫ+177p$M_Ty@_4Tp21240>;1?\S6Yacoby, A. //Heiblum, M. //Mahalu, D. //Shtrikman, H. 6/=5tFOl8Weizmann Inst Sci,Braun Ctr Submicron Res,Dept Condensed8/=54d~Tl>;@\S6Yacoby, A. //Heiblum, M. //Mahalu, D. //Shtrikman, H. 6/=5tFOl8Weizmann Inst Sci,Braun Ctr Submicron Res,Dept Condensed8/=5>tFOl;Coherence and Phase Sensitive Measurements in a Quantum Dot;/=5tFOl04.4.2/=5tFOl Physical Review Letters>/=5tFOl Article$M_D4@_,D May 15, 1995 $M_D4@_,D74$M_D4@_,D20$>M_D4@_,D 4047-4050 $M_D4@_,D%@\\As01mesant\Procite Databases\WCS\Articles\Yacoby A 1995 05.pdf@$M_D4@_,D+146>]$M_D4@_,D, Transport $M_D4@_,D21340?^9>h1?B01.4.1 Point DefectsHCSchubert, E.F.HCDoping in III-V SemiconductorsHC? Cambridge HC0Cambridge University PressHC01993HC0%None65090@]=iq,T582440]=iq,T US5281830 ]=iq,T JP; JP; JP ]=iq,T 1/25/1994 @]=iq,T582440]=iq,T US5281830 ]=iq,T JP; JP; JP ]=iq,T 1/25/1994 @]=iq,T582440]=iq,T US5281830 ]=iq,T JP; JP; JP ]=iq,T 1/25/1994 !QN~lt@ =iq,T63850A;@jT3Honold, A. //Schultheis, L. //Kuhl, J. //Tu, C. W. 3t=8uԫMax Planck Inst,Heisenbergstr 1/D-7000 Stuttgart 80//Fed Rep ; Asea Brown Boveri CorpA Res/Ch-5405 Baden//Switzerland ; at&T Bell Labs/Murray Hill//Nj/07974t=8uԫNCollision Broadening of Two-Dimensional Excitons in a GaAs Single Quantum WellNAt=8uԫ03.2.2t=8uԫ "Physical Review B-Condensed Matter"t=8uԫ Articlel$M_o@_oAl 1989 Sep 15 =8uԫ40l$M_o@_ol9l$M_o@_ol 6442-6445 l$M_o@_oAl%@\\As01mesant\Procite Databases\WCS\Articles\Honold A 1989 09.pdf,@/hH9XAXFA=8uԫ+126l$M_o@_ol2161A0B 4@_,$D21620$M_D4@_,$D%=\\Aeron\Procite Databases\WCS\Articles//Horikoshi 1979 04.PDF=b=@s^ +134$M_DB 4@_,$D21620$M_D4@_,$D%=\\Aeron\Procite Databases\WCS\Articles//Horikoshi 1979 04.PDF=b=@s^ +134$M_DB 4@_,$D21620$M_D4@_,$D%=\\Aeron\Procite Databases\WCS\Articles//Horikoshi 1979 04.PDF=b=@s^ +134$M_DB 4@_,$D21620$M_D4@_,$D%=\\Aeron\Procite Databases\WCS\Articles//Horikoshi 1979 04.PDF=b=@s^ +134$M_DB 4@_,$D21620JzRFv6 \d@(=@j(Kotaki, Masahiro//Akasaki, I.//Amano, H.']=iq,T]=iq,THLight-emitting semiconductor device using gallium nitride g@roup compoundH]=iq,T11.1.2]=iq,TTToyoda Gosei Co., Ltd.; Nagoya University; Research Development Corporation of JapanT@]=iq,T582440]=iq,T US5281830 ]=iq,T JP; JP; JP ]=iq,T 1/25/1994 @]=iq,TCA2054242AA CA2054242C DE69124190C0 DE69124190T2 EP0483688A2 EP0483688A3 EP0483688B1 JP02696095B2 JP04163970A2 JP04163971A2 US5214349 US5281830]@=iq,T;US4316208 US4408217 US4428217 US4855249 US4911102 US4946548;]=iq,T"H. Amano, et al., ""Stimulated Emission Near Ultraviolet at Room Temper@ature from a GaN Film Grown on Sapphire by MOVPE Using an A1N Buffer Layer"", Japanese Journal of Applied Physics, vol. 29, No. 2, Feb., 1990, pp. 81-82.; H. Amano, et al., ""P-Type Condu"@]=iq,T"]US5393993 US5563422 US5585649 US5587593 US5652434 US5652438 US5657335 US5661313 US5665986 US5693963 US5700713 US5717226 US5734182 US5739554 US5756374 US5767581 US58085@92 US5811319 US5834325 US5877558 US5891790 US5905276 US5952680 US5962875 US6005258 US6060727 US6093941 US6093965 US6107162 US6120600 US6201265 US6204512 US6265726 US6284395 USRE36747]]@=iq,T%;\\As01mesant\Procite Databases\WCS\Patents\US05281830__.pdf;]=iq,T' H01L 33/0 ]=iq,T+35] 4@_,$D21620 4@_,$D21620^N~d|B;@tTHorikoshi, Y. //Furukawa, Y. =@s^ 7Nippon Telegraph & Tel Publ Corp,Musashino Elect Commun7=@s^ NTemperaturBe Sensitive Threshold Current of InGaAsp-Inp Heterostructure LasersN=@s^ 10.1.2=@s^  #Japanese Journal of Applied Physics#B=@s^  Article$M_D4@_,$D1979$M_D4@_,$D18$M_D4@_,$D4$M_DB4@_,$D809-815$M_D4@_,$D%B\\As01mesant\Procite Databases\WCS\Articles//Horikoshi 1979 04.PDFBb=@s^ +134$B%M_D4@_,$D21620C;@T(Horst, M. //Merkt, U. //Kotthaus, J. P. (x(=x dԫ;Univ Hamburg,Inst Angew Phys/D-2000 Hamburg 36//Fed Rep Ger;x(=x dCAMagneto-Polarons in a Two-Dimensional Electron Inversion on InSbAx(=x dԫ02.5.4x(=x dԫ Physical Review LettersxC(=x dԫ Article"$M_t+@_*,t" 1983 Mar 7x(=x dԫx(=x dԫ50"$M_t+@_C*,t"10"$M_t+@_*,t"754-757"$M_t+@_*,t"%?\\As01mesant\Procite Databases\WCS\Articles\Horst M 1983 03.pdf,@/hH9XD;1?THHoudre, R. //Stanley, R. P. //Oesterle, U. //Ilegems, M. //Weisbuch, C. H=qKԫlEcole Polytech Fed Lausanne,Inst Micro & Optoelectr/Ch-1015 ; EcK{N~;t\3C(=x dԫ Article"$M_t+@_*,t" 1983 Mar 7x(=x dԫx(=x dԫ50"$M_t+@_C*,t"10"$M_t+@_*,t"754-757"$M_t+@_*,t"%?\\As01mesant\Procite Databases\WCS\Articles\Horst M 1983 03.pdf,@/hH9XCCXFCx(=x dԫx(=x dԫ+121"$M_t+@_*,t"21650D;@THHoudre, R. //Stanley, R. P. //Oesterle, U. //Ilegems, M. //Weisbuch, C. H=qKԫlEcole Polytech Fed Lausanne,Inst Micro & Optoelectr/Ch-1015 ; EcDole Polytech,Phys Mat Condensee Lab/F-91128l=qKԫARoom-Temperature Cavity Polaritons in a Semiconductor MicrocavityA=qKԫ05.2.3D=qKԫ "Physical Review B-Condensed Matter"=qKԫ Article$M_@_H 1994 Jun 15 @Ectr/Ch-1015 ; Ecole Polytech,Phys Mat Condensee Lab/F-91128l(=Iy1ԫbMeasurement of Cavity-Polariton Dispersion Curve From Angle-Resolved Photoluminescence ExperimentEsb(=Iy1ԫ05.2.3(=Iy1ԫ Physical Review Letters(=Iy1ԫ Article!$M_*@_E'! Oct 10, 1994 !$M_*@_'!73!$M_*@_'!15!$M_*@_'! 2043-2046 !$M_*@_'$M_*@_'! 2043-2046 !$M_*@_''! 2043-2046 !$M_*@_'u'WG @\3d3D K Quantum-Wells/ Excitons2$M_@_H21660E;@TYHoudre, R. //Weisbuch, C. //Stanley, R. P. //Oesterle, U. //Pellandini, P. //Ilegems, M. Y(=Iy1ԫlEcole Polytech Fed Lausanne,Inst Micro & OptoeleEctr/Ch-1015 ; Ecole Polytech,Phys Mat Condensee Lab/F-91128l(=Iy1ԫbMeasurement of Cavity-Polariton Dispersion Curve From Angle-Resolved Photoluminescence ExperimentEsb(=Iy1ԫ05.2.3(=Iy1ԫ Physical Review Letters(=Iy1ԫ Article!$M_*@_E'! Oct 10, 1994 !$M_*@_'!73!$M_*@_'!15!$M_*@_'! 2043-2046 !$M_*@_'E!%@\\As01mesant\Procite Databases\WCS\Articles\Houdre R 1994 10.pdf,@/hH9XEXFEh(=Iy1ԫ*We study the photoluminescence of quantum well Eexcitons imbedded in monolithic microcavities. In the strong coupling regime, a coupled-mode situation develops, the cavity polariton. We describe a model of the photoluminescence phenomenon in this rEegime, which by comparison with experiments enables us to determine the cavity-polariton dispersion curve. An excellent agreement with a theoretical model is found.!$M_*@_'E!+165!$M_*@_'!,+Inhibited Spontaneous Emission/ Microcavity+!$M_*@_'!21670F;Ӯ1?THu, E. L. //Howard, R. 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""Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactants"" in Jr. Crystal Growth 107 (1991), pp. 653-658."=HoL"US5419785 US5496766 US5523589 US5525538 US5547897 US5592501 US5604135 US5604763 US5633192 US5656538 US5657335 US5677538 US5686738 US5700713 US5724062 US5725674 US5739554 US5776793 US57862L 33 US5812105 US5814533 US5834331 US5838706 US5843590 US5847397 US5863811 US5874320 US5888886 US5926726 US6120600 US6123768 US6172382 US6218269 US6258614 US6294016 US6380052 US6392979 US6398867 US63994Mnvestigation on the Growth-Process of GaAs During Migration-Enhanced EpitaxyU8H=XaqfX06.1.38H=XaqfX 2Japanese Journal of Applied PhysMics Part 2-Letters28H=XaqfX Articlea$M_jk@_k<Aa28(#11)a$M_jk@_k<Aa L1180-L1182 p_=XaqMfX%>\\Aeron\Procite Databases\WCS\Articles/Kobayashi N 1989 11.pdf>a$M_jk@_k<Aa+121a$M_jk@_k<Aa22030DN~2K8B1 KR9506968Y1 US5290393yu=Xu<OUS3683240 US3829556 US4153905 US4473938 US4476620 US4855249 US4911102 US5122845Ou=Xu<"JapanesKe Journal of Applied Physics vol. 28, No. 12, Dec., 1989 pp. L2112-L2114.; Journal of Crystal Growth 98 (1989) 209-219.; Solid State Communications, vol. 60, No. 6, pp. 509-512, 1886.; Appl. 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Nagoya) Oct. 1990 Isambu.; Extended Abstracts vol. 87-2, Oct. 1987, Princeton, N.J., U.S. pp. 1602-1603 KNagatomo ""Epitaxial growth of GaN films by low pressure . . . deposition"" Patent Abstracts of Japan vol. 014, No. 263 (E-0938) Jun. 1990 \A JP-A-02 081 483 (Manabe Katsushide) Mar. 1990."Ku=Xu<"US5496766 US5523589 US5587014 US5592501 US5632964 US5633192 US5637531 US5657335 US5661074 US5677538 US5679965 US5686738 US5714006 US5716450 US5724062 US5725674 US5739K 554 US5760426 US5764673 US5770887 US5812105 US5814533 US5834331 US5838706 US5847397 US5863811 US5868837 US5874320 US5888886 US5903017 US5927995 US5962875 US5990495 US5993542 US6120600 US6121638 US6123L(=Ӯ1?~%Nakamura, Shuji//Iwasa, N.//Senoh, M.=Ho=Ho =Ho5Method of manufacturing LP-type compound semiconductor5=Ho08.1=Ho Nichia Chemical Industries, Ltd. =Ho700863^N~ K 768 US6147364 US6153010 US6218207 US6218269 US6242764 US6266355 US6270574 US6284395 US6339014 US6348096 US6358770 US6377596 US6387722 US6406931u=Xu<%;\\As01mesant\PK rocite Databases\WCS\Patents\US05290393__.pdf;u=Xu<' C30B 25/22 u=Xu<+51u=Xu<63860L(=@~%Nakamura, Shuji//Iwasa, N.//Senoh, M.=Ho=Ho =Ho5Method of manufacturing LP-type compound semiconductor5=Ho08.1=Ho Nichia Chemical Industries, Ltd. =Ho700863L=Ho US5306662 =HoJP=Ho 4/26/1994 =HoDE692271L70C0 DE69227170T2 EP0541373A2 EP0541373A3 EP0541373B1 JP02540791B2 JP05183189A2 JP05198841A2 JP05206520A2 US5306662 US5468678=Ho'US4615766 US4960728 US5042043 USMnvestigation on the Growth-Process of GaAs During Migration-Enhanced EpitaxyU8H=XaqfX06.1.38H=XaqfX 2Japanese Journal of Applied PhysMics Part 2-Letters28H=XaqfX Articlea$M_jk@_k<Aa28(#11)a$M_jk@_k<Aa L1180-L1182 p_=XaqMfX%>\\Aeron\Procite Databases\WCS\Articles/Kobayashi N 1989 11.pdf>a$M_jk@_k<Aa+121a$M_jk@_k<Aa22030+121a$M_jk@_k<Aa22030030w>Hx:t3N;@V-Kobayashi, N. //Makimoto, T. //Horikoshi, Y. -b=t87Nippon Telegraph & Tel Publ Corp,Musashino Elect Commun7b=t8N`Abrupt P-Type Doping Profile of Carbon Atomic Layer Doped Grown by Flow-Rate Modulation Epitaxy`b=t806.3.3`=t8N`=t8 Applied Physics Lettersb=t8 Article$M_  @_ : 1987 May 18 $M_  @_ :N50$M_  @_ :20$M_  @_ : 1435-1437 $M_  @_ :%C\\As01mesant\Procite Databases\WCS\Articles\Kobayashi N N1987 05.pdf,$M_  @_ :$M_  @_ :+108$M_  @_ :22040O;@,VKoyama, F. //Iga, K. X}=p"̬;Tokyo Inst Technol,Precis Machinery & Electr Res Lab,Midori;X}=p"̬)Frequency ChirOping in External Modulators)X}=p"̬10.5.2X}=p"̬ Journal of Lightwave TechnologyX}=p"̬ ArticleO $M_dT@_L"d 1988 Jan $M_dT@_L"d 6 $M_dT@_L"d 1 $M_dT@_L"d 87-93 Pj.=1? !hChanghasnain, C. J. //Harbison, J. P. //Hasnain, G. //Vonlehmen, A. C. //Florez, L. T. //Stoffel, N. G. h,=Xju̬Bell Commun Res Inc,Network Sci &=1? !hChanghasnain, C. J. //Harbison, J. P. //Hasnain, G. //Vonlehmen, A. C. //Florez, L. T. //Stoffel, N. G. h,=Xju̬Bell Commun Res Inc,Network Sci &(XN~2|3P\@_TxT 1402-1409 $M_l\@_TxT%G\\As01mesant\Procite Databases\WCS\Articles\Changhasnain CJ 1991 06.pdfG'=Xju̬*We invePstigate the dynamic, polarization, and transverse mode characteristics of strained InGaAs-GaAs quantum well vertical cavity surface emitting lasers (VCSEL's) emitting at 0.98-mu-m. A comparison of theP dynamic behavior is made between VCSEL's with high and low operating voltages and series resistances. A large wavelength chirp in the lasing spectrum is observed for the lasers with high voltage/resiPstance even under low-duty-cycle pulse operation due to resistive heating close to the laser junction. Using a more optimized laser design, we achieved the lowest reported threshold voltage and resistPance of 2.6 V and 40-OMEGA, respectively, for a 20-mu-m square gain-guided VCSEL with as-grwn mirrors. The wavelength chirp is reduced by close to two orders of magnitude for these lasers. We observe P that the transverse mode structure of VCSEL's and its dependence on laser dimensions and drive current are highly analogous to those of edge emitting lasers, whereas the polarization characteristics oP f the two types of lasers are significantly different. Linearly polarized, single TEM00 mode emission is observed for gain-guided VCSEL's biased near threshold. The direction of polarization randomly Qj.=]l=?"PChen, Y. K. //Nottenburg, R. N. //Panish, M. B. //Hamm, R. A. //Humphrey, D. A. P@=p&u̬$At&T Bell Labs/Murray Hill//Nj/07974$@Q=p&u̬N~3TU;@V3Schultheis, L. //Kuhl, J. //Honold, A. //Tu, C. W. 3=ЈqP̬aMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed ; at&T Bell Labs/Murray HilUl//Nj/07974a=ЈqP̬KPicosecond Phase Coherence and Orientational Relaxation of Excitons in GaAsK=ЈqP̬R01.6.2 Ultrafast Carrier-CarUrier Scattering: Response to Ultrashort Optical PulsesR=ЈqP̬ Physical Review Letters=ЈqP̬ Article$M_\op@_Up` 1986 Oct 6 $M_\op@_p`57$M_\op@_p`14$M_\op@_p` 1797-1800 $M_\op@_p`U%D\\As01mesant\Procite Databases\WCS\Articles\Schultheis L 1986 10.pdfD$M_\op@_p`+105$M_\op@_p`22250Vl//Nj/07974a=@s"̬ZUltrafast Phase Relaxation of Excitons Via Exciton-Exciton and Exciton-Electron CollisionsZ=@s"̬R01.6.2 UltrafVl//Nj/07974a=@s"̬ZUltrafast Phase Relaxation of Excitons Via Exciton-Exciton and Exciton-Electron CollisionsZ=@s"̬R01.6.2 Ultraf Article$VM_td@_\Jt 1986 Sep 29 $M_td@_\Jt57$M_td@_\Jt13$M_td@_\Jt 1635-1638 $M_tVd@_\Jt%?\\Aeron\Procite Databases\WCS\Articles\Schultheis L 1986 09.pdf?$M_td@_\Jt+191$M_td@_\Jt22260YY33W;@W1Soda, H. //Iga, K. //Kitahara, C. //Suematsu, Y. 1HHBpTokyo Inst Technol,Precis Machinery & Electr Res Lab,4259 ; Tokyo Inst Technol,Dept PhyWs Electr,Meguro Ku/TokyopHHB-GaInAsP-InP Surface Emitting Injection-LasersHHBHHBHWHBHHB"HHB11.2.4HHB #Japanese Journal of Applied Physics#WHHB ArticleHHB1979HHB18HHB12HHBW 2329-2330 HHB%<\\As01mesant\Procite Databases\WCS\Articles//Soda H 1979.pdf<HHB+110HHBW22300X5-=ww0 Article$M_\$L&@_D&]\1977$M_\$L&@_D&]\30$M_\$L&@_D&]\9$M_\$L&X5-=ww0 Article$M_\$L&@_D&]\1977$M_\$L&@_D&]\30$M_\$L&@_D&]\9$M_\$L&X5-=ww0 Article$M_\$L&@_D&]\1977$M_\$L&@_D&]\30$M_\$L&@_D&]\9$M_\$L& 1985 Apr 15 $M_@_H31$M_@_H8$M_@_H 5569-5572 $M_@_H%<\$M_@_H%<\}DN~ \|T0    0 00   0$   04 , < 0 0 D T \  0d  L l 0t |  0  0   )  0  " #)%0& ' )1) * + 1, - . /10 1 212 4$15$ 6 7, 94 9,1;< <D <41=L ><1@D1A\ BT Bd Cl DL1E| E T1Ft H I I I\1K Kd1Ll1M N N O O Pt1P|1Q R1T1U W Y Z [)\ ^ ^$*_ ` b c d$ d 1e, g4 g1h< i1jD k1mL n\ oT pd r1st t| ul v v,*w x z1{ | } ~1 )1   1    1 1 1 11$2 24,<2DL2dzpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&  ]M<@Greuter, F.//Blatter, G.4=t/5Asea Brown Boveri,Corp Res/Ch-5405 Baden//Switzerland54=t/TElectrical-Proper]ties of Grain-Boundaries in Polycrystalline Compound SemiconductorsT4=t/04.4.44=t/ $Semiconductor Science and Technology$]4=t/ Review$M_@_.1990$M_@_.5$M_@_.2$M_]@_.111-137$M_@_. No references $M_@_.%>\\As01mesant\Procite Databases\WCS\Articles/Greuter F 1990.pdf,]|$M_@_.$M_@_.+87$M_@_.61960^;@tY Jaros, M.  =ks9Univ Newcastle Upon Tyne,Dept Theoret Phys/Newcastle Tyne9=ksDeep Levels in Semiconducto^rs=ks,01.4.3 "Deep" Localized-Wave-Function Levels,=ks Advances in Physics=ks Review^$M_܆@_Ԇ>1980$M_܆@_Ԇ>29$M_܆@_Ԇ>3$M_܆@_Ԇ>409-525$^M_܆@_Ԇ>%<\\As01mesant\Procite Databases\WCS\Articles/Jaros M 1979.pdf<$M_܆@_Ԇ>+120$M_܆@_Ԇ>22900_;[?~Y\Jiang, H. W. //Willett, R. L. //Stormer, H. L. //Tsui, D. C. //Pfeiffer, L. N. //West, K. W.\=HuxPMit,Francis Bitter Natl Magnet Lab/Cambridge/BrN~R3Z19679897000026 Copyright 2003 SciSearch Plus5$M_,@_`fl+121$M_,@_`fl65030[;@X3Henoc, P. //Izrael, A. //Quillec, M. //Launois, H. 3;Ctr Natl Etud Telecommun,Cnrs,Lab 250,196 Rue Paris/F-92220;iComposition Modulation in Liquid-Phase Epitaxial InxGa1-xAsy[p1-Y Layers Lattice Matched to InP Substratesi07.2.1 Applied Physics Letters Article19824011963-965%<\\As01mesant\Procite Databases\WCS\Articles/Henoc P 1982.pdf<+[15122770\(=@Yodoshi, Keiichi//Ibaraki, Akira//Shono, Masayuki//Honda, Shoji//Ikegami, Takatoshi//Hayashi, Nobuhiko//Furusawa, Koutarou//Tajiri, Atushi//Ishikawa, T.//Matsukawa, Kenichi//Miya\ke, Teruaki//Goto, Takenori//Matsumoto, Mitsuaki//Ide, Daisuke//Bessho, Yasuyuki8C=Ho2 8C=Ho2 i8C=Ho2 3S\emiconductor laser with a self-sustained pulsation38C=Ho2 10.2.58C=Ho2 Sanyo Electric Co., Ltd.8C=Ho2 \4932608C=Ho2  US5416790 8C=Ho2 JP8C=Ho2  5/16/1995 8C=Ho2 ]M<1?Greuter, F.//Blatter, G.4=t/5Asea Brown Boveri,Corp Res/Ch-5405 Baden//Switzerland54=t/TElectrical-Proper]ties of Grain-Boundaries in Polycrystalline Compound SemiconductorsT4=t/04.4.44=t/ $Semiconductor Science and Technology$rsT4=t/04.4.44=t/ $Semiconductor Science and Technology$ductor Science and Technology$<l,\Cs\^JP03238974B2 JP03281666B2 JP06196810A2 JP06260716A2 JP07022695A2 US5416790 US5506170 US5610096^8C=Ho2 US4961197 US52971588C=Ho2 \"A New Self-Aligned Structure For (GaAl) As High Power Lasers With Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD (Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 19\86, pp. L498-L500)."8C=Ho2 "US5519362 US5555271 US5581570 US5608752 US5675601 US5708671 US5727012 US5751756 US5811839 US5812578 US5850411 US5933442 US6002701 US60143\94 US6026108 US6072817 US6081541 US6141364 US6151348 US6160829 US6278137 USRE368028C=Ho2 %;\\As01mesant\Procite Databases\WCS\Patents\US05416790__.pdf;8C\=Ho2 ' H01S 3/19 8C=Ho2 +228C=Ho2 63890]ties of Grain-Boundaries in Polycrystalline Compound SemiconductorsT4=t/04.4.44=t/ $Semiconductor Science and Technology$]ties of Grain-Boundaries in Polycrystalline Compound SemiconductorsT4=t/04.4.44=t/ $Semiconductor Science and Technology$ron\Procite Databases\WCS\Articles/Greuter F 1990.pdf'$]wM_@_.$M_@_.+87$M_@_.61960^;h1?tY Jaros, M.  =ks9Univ Newcastle Upon Tyne,Dept Theoret Phys/Newcastle Tyne9=ksDeep Levels in Semiconducto^rs=ks,01.4.3 "Deep" Localized-Wave-Function Levels,=ks Advances in Physics=ks Review =zN~1)_;@~Y\Jiang, H. W. //Willett, R. L. //Stormer, H. L. //Tsui, D. C. //Pfeiffer, L. N. //West, K. W.\=HuxPMit,Francis Bitter Natl Magnet Lab/Cambridge/_/Ma/02139 ; Princeton Univ/Princeton//Nj/08544 ; at&T Bell Labs/Murray Hill//Nj/07974=HuxPAQuantum Liquid Versus Electron Solid Around V=1/5 Landau- FillingA_=HuxP02.6.3~=HuxP Physical Review Letters=HuxP ArticleJ$M_SU@_UJJ_ 1990 JUL 30 J$M_SU@_UJJ65J$M_SU@_UJJ5J$M_SU@_UJJ633-636J$M_SU@_UJJ%@\\As01_mesant\Procite Databases\WCS\Articles\Jiang HW 1990 07.pdf@J$M_SU@_UJJ+195J$M_SU@_UJJ22910`;@Y John, S.  0=*t0Univ Toronto,Phys/Toronto M5s 1a1/Ontario/Canada00=*tLocalization of Light0a<1?*Masselink, W. T.//Chang, Y. C.//Morkoc, H.*(g=XvL2Univ Illinois,Coordinated Sci Lab/Urbana//Il/618012(g=XvLmAcaceptor Spectra of AlxGa1-xAs-GaAs Quantum Wells in External Fields: Electric, Magnetic, and Uniaxial-Stressm(g=XvL03.1.1H =XvL "Pahysical Review B-Condensed Matter"(g=XvL Article$M_@_* 1985 Oct 15 $M_@_*32$M_a~cles\Masselink WT 1985 10.pdf?$M_@_*+101$M_@_*608001aN~)a\Articles\Masselink WT 1985 10.pdfD$M_@_*+101$M_@_*60800b;@(Z)Jusserand, B. //Paquet, D. //Regreny, A. )= vvCtr Natl Etud Telecommun,Lab Bagneux,196 Rue Paris/F-92220 ; Ctr Natl Etud Telecommun,Div Icm/Fb-22301 Lannion//Francev= v7Folded Optical Phonons in GaAs Ga1-xAlxAs Superlattices7= v04.2.3= vb "Physical Review B-Condensed Matter"= v Article$M_TD@_<N& 1984 Nov 15 $M_TD@_<N&30b$M_TD@_<N&10$M_TD@_<N& 6245-6247 $M_TD@_<N&%C\\As01mesant\Procite Databases\WCS\Articles\Jusserand B 1984 11.pbdf,$M_TD@_<N&$M_TD@_<N&+136$M_TD@_<N&23080cV "Physical Review B-Condensed Matter"W=PntV Article$M_@_1981 December 15$M_@_2cV "Physical Review B-Condensed Matter"W=PntV Article$M_@_1981 December 15$M_@_2cV "Physical Review B-Condensed Matter"W=PntV Article$M_@_1981 December 15$M_@_2en, L. P. //Jauhar, S. //Orenstein, J. //Mceuen, P. L. //Motohisa, I. //Sakaki, H. \}=`rFlUniv Calif Berkeley,Dept Phys/Berkeley//Ca/94@_2 :j 9i53c;@2ZJusserand, B. //Sapriel, J. W=PntV5Ctr Natl Etud Telecommun,Div Pms,Cnrs,Lab 250/F-922205W=PntV`Raman Investicgation of Anharmonicity and Disorder-induced effects in Ga1-xAlxAs Epitaxial Layers`W=PntV05.1.3W=PntVW=PntcV "Physical Review B-Condensed Matter"W=PntV Article$M_@_1981 December 15$M_@_2c4$M_@_12$M_@_ 7194-7205 $M_@_%C\\As01mesant\Procite Databases\WCS\Articles\Jusserand B 198ci1 12.pdfC$M_@_+154$M_@_23090dgh a Quantum-Dot>}=`rFl04.4.2}=`rFl Physical Review Letters}=`rFl Article$M_=dgh a Quantum-Dot>}=`rFl04.4.2}=`rFl Physical Review Letters}=`rFl Article$M_=dgh a Quantum-Dot>}=`rFl04.4.2}=`rFl Physical Review Letters}=`rFl Article$M_=en, P. K. //Vanderveen, J. F. //Mazur, A. //Pollmann, J. //Neave, J. H. //Joyce, B. A. [(C=@uFPhilips Res Labs/5600 Md Eindhoven//Netherlandes ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Univ Dortmund/D-4600 Dortmund 50//Fed Rep Ger ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England(C=@uF/_N~3,e;@Z[Larsen, P. K. //Vanderveen, J. F. //Mazur, A. //Pollmann, J. //Neave, J. H. //Joyce, B. A. [(C=@uFPhilips Res Labs/5600 Md Eindhoven//Netherlandes ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Univ Dortmund/D-4600 Dortmund 50//Fed Rep Ger ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England(C=@uFe_Surface Electronic-Structure of GaAs(001)-(2x4): Angle-Resolved Photoemission and Tight-Binding_(C=@uF06.2.2(C=@uF "Physical Reeview B-Condensed Matter"(C=@uF Article$M_@_"3 1982 Sep 15 $M_@_"326$M_@e_"36$M_@_"3 3222-3237 $M_@_"3%A\\As01mesant\Procite Databases\WCS\Articles\Larsen PK 1982 09.pdfA$M_eI@_"3+145$M_@_"323280fdinated Sci Lab/Urbana//Il/61801q0)=qUȪ&Reactive Ion Etching of GaN Using Bcl3&0)=qUȪ08.2.3*0)=qUfdinated Sci Lab/Urbana//Il/61801q0)=qUȪ&Reactive Ion Etching of GaN Using Bcl3&0)=qUȪ08.2.3*0)=qUon etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors sfuch as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 Angstrom/to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 Angstrom/^?oN~2$3f<@8Lin, M. E.//Fan, Z. F.//Ma, Z.//Allen, L. H.//Morkoc, H.80)=qUȪqUniv Illinois,Mat Res Lab,104 S Goodwin Ave/Urbana//Il/61801 ; Univ Illinois,Coorfdinated Sci Lab/Urbana//Il/61801q0)=qUȪ&Reactive Ion Etching of GaN Using Bcl3&0)=qUȪ08.2.3*0)=qUfȪ Applied Physics Letters0)=qUȪ Article$M_@_ Feb 14, 1994 $M_@_64$M_f@_7$M_@_887-888$M_@_6$M_@_%?\\As01mesant\Procite Databases\WCS\Articfles\Lin ME 1994 02b.pdf?$M_@_*vReactive ion etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factfors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 Angsftrom/s was obtained with the BCl3 plasma for a plasma power of 200 W pressure of 10 mTorr, and flow rate of 40 sccm. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films gy (MBE)3=s06.1.1=s &Journal of Vacuum Science & Technology&=s Articleg$M_d@_ 1979$M_d@_ 16$M_d@_ 2$M_d@_ 275-284$M_d@=o<"Extended Abstracts (The 40th Spring Meeting, 1993): The Japan Society of Applied Physics and Rela^N~33h(=@Hatano, Ako//Ohba, Y.@=o<@=o<+Compound semicondutor light-emitting device+@=o<h07.5.4@=o<Kabushiki Kaisha Toshiba@=o<581270@=o< US5432808 @h=o<JP@=o< 7/11/1995 @=o<?JP00311865A2 JP03243111B2 JP06326416A2 JP2000311865A2 US5432808?@h=o<US5187547 US5243204 US5323022@=o<"Extended Abstracts (The 40th Spring Meeting, 1993): The Japan Society of Applied Physics and Relahted Societies 31p-ZQ-17, T. Okahisa, et al., ""Growth of GaN films on GaAs, 3cSiC . . . "" (no month).; Journal of Crystal Growth, vol. 127, pp. 136-142, M. J. Paisley, et al., ""Molecular Beam Epitaxhy of Nitride Thin Films 1993 (no month)"".; Applied Surface Science, vol. 41/42, pp. 504-508, 1989, T. Sasaki, et al., ""MOVPE-Grown GaN on Polar Planes . . . "" (no month)."@=i(= n9X1Growth of Thin-Films by Laser-Induced Evaporation1(= n9X06.0(= n9X :CRC Critical Reviews iin Solid State and Materials Sciences:(= n9X Review$M_ @_1988$M_ @_15$M_ i@_1$M_ @_63-109$M_ @_%9\\Aeron\Procite Databases\WCS\Articles/Cheung JT 1988.pdf9$M_ @_`v Journal of Crystal Growth=`v$M_ @_^N~3DiG@_+218$M_ @_8740j;@[Neave, J. H. //Joyce, B. A. =`v'Philips Res Labs/Redhill/Surrey/England'=`vPStructure and Stoichiometryj of (100)-GaAs Surfaces During Molecular-Beam EpitaxyP=`v06.2.3=`v Journal of Crystal Growth=`vj Article=`v1978=`v44=`v4=`v3j87-397=`v%=\\As01mesant\Procite Databases\WCS\Articles/Neave JH 1978.pdf==`v+150=`v2j3530kѻ;@nThornton, T. J. [=8veUniv London Imperial Coll Sci Technol & Med,Dept Elect Engn & Elect,Exhibit Rd,London Sw7 2bt,Englande[k=8v:Ballistic Transport in GaAs Quantum Wires: a Short History:[=8v03.4.2[=8v[=8vk !Superlattices and Microstructures![=8v Article$M_&(@_(1998$M_&(@_(23$kM_&(@_(3-4$M_&(@_(601-610$M_&(@_(%@\\As01mesant\Procite Databases\WCS\Articles/Thornton TJ 1998.pdf@l(=1?\Capasso, F.//Cho, A.Y.//Faist, J.//Hutchinson, A. L.//Luryi, Serge//Sirtori, C.//Sivco, D.L.0=woL[=woL[+L|-]<Lk !Superlattices and Microstructures![=8v Article$M_&(@_(1998$M_&(@_(23$kM_&(@_(3-4$M_&(@_(601-610$M_&(@_(%@\\As01mesant\Procite Databases\WCS\Articles/Thornton TJ 1998.pdf@k$M_&(@_(*A brief review of ballistic transport in GaAs quantum wires is presented. Methods for fabricating and characterising wires of widths 0.1-1 mu m are described. The newk physics which emerged from measurements of electron transport in these wires is illustrated using conductance quantisation, quenching of the Hall effect, the negative bend resistance and diffuse bounkdary scattering as examples. (C) 1998 Academic Press Limited.$M_&(@_(+0$M_&(@_(,Ballistic Transport/ Quantum Wires/ Heterostructuresk/ Dimensional Electron-Gas/ Universal Conductance Fluctuations/ Gaas/Algaas Heterostructures/ Boundary Scattering/ Point Contacts/ Heterojunction/ Localization/ Resistance/ Algaas/ Magnetoresistancek1$M_&(@_(60270l=woL[Unipolar semiconductor laser=woL[10.2.4=woL[At&T Ipm Corp.=woL[l=woL[Unipolar semiconductor laser=woL[10.2.4=woL[At&T Ipm Corp.=woL[7-709.; ""Evaluation of the Feasibility of a Far-infrared Laser Bas"=woL["US5570386 US5712865 US5727010 US5901168 ["US5570386 US5712865 US5727010 US5901168 'N~2DTl(=@\Capasso, F.//Cho, A.Y.//Faist, J.//Hutchinson, A. L.//Luryi, Serge//Sirtori, C.//Sivco, D.L.0=woL[=woL[+l=woL[Unipolar semiconductor laser=woL[10.2.4=woL[At&T Ipm Corp.=woL[l713790=woL[ US5457709 =woL[US=woL[ 10/10/1995 =woL[lDE69510590C0 DE69510590T2 DE69606812C0 DE69606812T2 EP0676839A1 EP0676839B1 EP0757418A1 EP0757418B1 JP08279647A2 JP09102653A2 US5457709 US5509025 US5570386=woL[l US5311009 =woL["Possibility of the Amplification of Electromagnetic Waves in a Semiconductor with a Superlattice, by R. F. Kazarinov et al., Soviet Physics-lSemiconductors, vol. 5, No. 4, Oct., 1971, pp. 707-709.; ""Evaluation of the Feasibility of a Far-infrared Laser Bas"=woL["US5570386 US5712865 US5727010 US5901168 lUS5936989 US5937118 US5963571 US5978397 US5995529 US6023482 US6055254 US6055257 US6091751 US6091753 US6137817 US6144681 US6278134 US6301282 US6324199 US6326646 US6404791=woLmaInas/GaAs Pyramidal Quantum Dots - Strain Distribution, Optical Phonons, and Electronic-Structureab=vPY07.4.1b=vPYmb=vPY "Physical Review B-Condensed Matter"b=vPY Article$M_L<@_4DnL 1995 Oct 15 $M_L<@_4tic strain is mostly ct^N~L3l[%;\\As01mesant\Procite Databases\WCS\Patents\US05457709__.pdf;=woL[' H01S 3/19 =woL[+21=woL[l63910mj.=@(Grundmann, M. //Stier, O. //Bimberg, D. (b=vPY8Tech Univ Berlin,Inst Festkorperphys,Hardenbergstr 36/D-8b=vPYmaInas/GaAs Pyramidal Quantum Dots - Strain Distribution, Optical Phonons, and Electronic-Structureab=vPY07.4.1b=vPYmb=vPY "Physical Review B-Condensed Matter"b=vPY Article$M_L<@_4DnL 1995 Oct 15 $M_L<@_4mDnL52$M_L<@_4DnL16$M_L<@_4DnL 11969-11981 $M_L<@_4DnL%C\\As01mesant\Procite Databases\WCS\Articles\Grmundmann M 1995 10.pdfC$M_L<@_4DnL*The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD's) on a thin wetting layer fabricated recently with moleculmar-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, rmepresenting a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mosn(=1?INakamura, Shuji//Yamada, Takao//Senoh, M.//Yamada, Motokazu//Bando, Kanji(=RyK=RyK =Ry180871B2 JP06314822A2 JP06338632A2 JP07045867A2 JP07094782A2 JP07094783A2 JP07106633A2 JP07221103A2 Jy 9i33n(=@INakamura, Shuji//Yamada, Takao//Senoh, M.//Yamada, Motokazu//Bando, Kanji(=RyK=RyK =RynK`Gallium nitride-based III-V group compound semiconductor device and method of producing the same`=RyK11.1.3=RyK nNichia Chemical Industries, Ltd. =RyK700863=RyK US5563422 =RyKJPn=RyK 10/8/1996 =RyKCN1015127B CN1046375A CN1046375B CN1102507A CN1213863A DE69425186C0 DE69425186T2 EP0622858A2 EP0622858A3 EP0622858B1 EP095261n7A1 JP02697572B2 JP02748818B2 JP02770717B2 JP02770720B2 JP02783349B2 JP02803742B2 JP03154364B2 JP03180871B2 JP06314822A2 JP06338632A2 JP07045867A2 JP07094782A2 JP07094783A2 JP07106633A2 JP07221103A2 JnP07254733A2 JP2001203389A2 KR0225612B1 TW0403945B US5563422 US5652434 US5767581 US5877558 US6093965 US6204512B1 US6204512 US20010022367A1=RyK1US4153905 US4495514 nUS5247533 US5281830 US52850781=RyKx"Kahn et al--""Metal semiconductor field effect transistor based on single crystal GaN"", Appl. Physics. Lett 62(15), 12 Apr. o;1?D\EOhba, Y. //Ishikawa, M. //Sugawara, H. //Yamamoto, M. //Nakanisi, T. E={^4Toshiba Corp,Toshiba Res & Dev Ctr,1 Komukai Toshiba4o={^{Growth of High-Quality InGaAlP Epilayers by MOCVDUsing Metalorganics and Their Application to Visible Semiconductor-Lasers{={^06.4.2 =t@Univ Colorado,Ctr Optoelectr Comp Syst,Dept Elect & Comp ; Solar {^06.4.2^N~633o;@D\EOhba, Y. //Ishikawa, M. //Sugawara, H. //Yamamoto, M. //Nakanisi, T. E={^4Toshiba Corp,Toshiba Res & Dev Ctr,1 Komukai Toshiba4o={^{Growth of High-Quality InGaAlP Epilayers by MOCVDUsing Metalorganics and Their Application to Visible Semiconductor-Lasers{={^06.4.2o={^ Journal of Crystal Growth={^ Article$M_4$@_61986$M_4$@_6o77$M_4$@_61-3$M_4$@_6374-379$M_4$@_6%;\\As01mesant\Procite Databases\WCS\Articles/Ohba Y 1oh986.pdf;={^+129$M_4$@_623620pEnergy Res Inst/Golden//Co/80401 ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/94304=t@*Introduction to Hydrogen in Semiconductors*=tpEnergy Res Inst/Golden//Co/80401 ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/94304=t@*Introduction to Hydrogen in Semiconductors*=t!1-15!@_\\As01mesant\Procite Databases\WCS\Articles\Lin ME 1993 02.pdf>$M_L<@_45L*<We report epitaxial GaN layers grown on 6H-SiC (0001) substrates.v A two stage substrate preparation procedure is described which effectively removes oxygen from the SiC substrate surface without the need of elaborate high temperature processing. In the first step, vdangling Si bonds on the substrate surface are hydrogen passivated using a HF dip before introduction into vacuum. Second, the substrate is treated with a hydrogen plasma reducing the amount of oxygenwrowth by Metallorganic Molecular-Beam Epitaxy (MOMBE)MP="u}06.4.1P="u}P="u} )Materials Sciencew & Engineering R-Reports)P="u} Review}$M_@_܈}May 1995}$M_@_܈}14}$M_@_܈areas of impurity contamination and precursor selection. At present, MOMBE has been applied primarily to deposition of III-V mat^N~O3v-carbon bonding to below the x-ray photoemission detection limit. Upon heating in the molecular beam epitaxy (MBE) growth chamber, the SiC substrates are observed to have a sharp (1 X 1) reconstructiovn with Kikuchi lines readily visible. GaN epilayers deposited on AlN buffer layers by plasma enhanced MBE show sharp x-ray diffraction and photoluminescence peaks.<$M_L<@_45v }L+106$M_L<@_45L,Molecular-Beam Epitaxy$M_L<@_45L60820wM<@Abernathy, C. R.P="u}6Univ Florida,Dept Mat Sci & Engn/Gainesville//Fl/326116P="u}MCompound Semiconductor Gwrowth by Metallorganic Molecular-Beam Epitaxy (MOMBE)MP="u}06.4.1P="u}P="u} )Materials Sciencew & Engineering R-Reports)P="u} Review}$M_@_܈}May 1995}$M_@_܈}14}$M_@_܈xs Films Grown by Molecular-Beam Epitaxy@ =Us]06.3.2 =Us] Journal of Applied Physics =Us] xArticle$M_܈̊@_Ċf1978$M_܈̊@_Ċf49$M_܈̊@_Ċf9$M_܈̊@_Ċf 4854-4861 x$M_܈̊@_Ċf%;\\Aeron\Procite Databases\WCS\Articles/Wood CEC 1978 09.pdf;$M_܈̊@_Ċf+157$M_܈̊@_Ċf23970yvbFInfrared Reflectivity Spectra and Raman-Spectra of Ga1- Mixed-CrystalsFP=>vb05.1.1P=>vb Journal }P=>vbFInfrared Reflectivity Spectra and Raman-Spectra of Ga1- Mixed-CrystalsFP=>vb05.1.1P=>vb Journal $M_?tA@_lA$624520lectivity Spectra and Raman-Spectra of Ga1- Mixed-CrystalsFP=>vb05.1.1P=>vb Journal >nY 3~olar Energy Res Inst/Golden//Co/80401&0 =wo,BCPolarized Band-Edge Photoluminescence and Ordering in Ga0.52in0.48pC0 =wo,B07.2.1~0 =wo,B Physical Review Letters0 =wo,B Article$M_l\@_T6Vl 1989 Nov 6 $M_l\@_T6~Vl63$M_l\@_T6Vl19$M_l\@_T6Vl 2108-2111 $M_l\@_T6Vl%E\\As01mesant\Procite Databases\WCS\Articles\Mascar~enhas A 1989 11.pdf,$M_l\@_T6Vl$M_l\@_T6Vl+115$M_l\@_T6Vl24790g>@ Dean, P.J. =Wse<NAbsorption and Luminescence of Excitons at Neutral Donors in Gallium PhosphideN=Wse<01.4.4 Excitons=Wse< Physical Review=Wse<American Physical Soc=Wse<1967$M_@_ 157$M_@_ 3$M_@_ 655-666=Wse<=Wse<%?\\As01mesant\Procite Databases\WCS\Articles\Dean PJ 1967 05.pdf?$M_@_ ' 0031-899X $M_@_ )5English A19679482900029 Copyright 2003 SciSkearch Plus5$M_@_ +152$M_@_ 65040j.=1?$qHasnain, G. //Tai, K. //Yang, L. //Wang, Y. H. //Fischer, R. J. //Wynn, J. D. //Weir, //Dutta, N. K.//Cho, A. Y. q=HtLXcAt&T Bell Labs,Div Phys ` ~uctor distributed Bragg reflectors (DBR). The light-current (L-I) characteristics and emission wavelength of such lasers are examined as a function of temperature and time under continuous wave (CW) and pulsed operation. We observed a sharp roll-over in the CW L-I characteristics which limits the maximum output power. The threshold current under CW operation is found to be lower than that obtained under pulsed conditions. Several microseconds long delay in lasing turn-on is also observed. We have performed calculations, using the measured Fabry-Perot mode wavelength as a thermometer of the VCS EL active region temperature, to explain quantitatively that these anomalies are a consequence of severe heating effects. Excessive heating in the VCSEL's results from the high series resistance of th e heterostructure DBR mirrors and the high operating current density. The heating causes a rapid shift of the gain peak relative to the Fabry-Perot mode, a reduction in gain constant at higher current s, and a thermal lensing effect. Thus, reduction of the series resistance and threshold current density can lead to significant improvements in the power performance of VCSEL's.- $M_;1?baYablonovitch, E. //Kane, E. O. =q)3Bell Commun Res,Navesink Res Ctr/Red Bank//Nj/077013=q)FBand-Structure Engineering of Semiconductor-Lasers for CommunicationsF=q)10.2.1=q) Journal of Lightwave Technology=q) Article$M_@_1988$M_@_6$M_@_8$M_@_8+193$M_@_24930^N~j.=@$qHasnain, G. //Tai, K. //Yang, L. //Wang, Y. H. //Fischer, R. J. //Wynn, J. D. //Weir, //Dutta, N. K.//Cho, A. Y. q=HtLXcAt&T Bell Labs,Div Phys Res/Murray Hill//Nj/07974 ; AT&T Bell Labs,Tech Staff/Murray Hill//Nj/079744=HtLX=HtLX-=HtLXbPerformance of Gain-Guided Surface Emitting Lasers With Semiconductor Distributed Bragg Reflectorsb=HtLX11.2.1=HtLX #IEEE Journal of Quantum Electronics#=HtLX Article $M_@_:Z 1991 Jun=HtLX=HtLX27 $M_@_:Z 6 $M_@_:Z  1377-1385 $M_@_:Z %A\\As01mesant\Procite Databases\WCS\Articles\Hasnain G 1991 06.pdfA $M_@_:Z *-We have investigated the performance limitations of gain-guided vertical cavity surface emitting lasers (VCSEL) which use epitaxially grown semicond;1?baYablonovitch, E. //Kane, E. O. =q)3Bell Commun Res,Navesink Res Ctr/Red Bank//Nj/077013=q)FBand-Structure Engineering of Semiconductor-Lasers for CommunicationsF=q)10.2.1=q) Journal of Lightwave Technology=q) Article$M_@_1988$M_@_6$M_@_8$M_@_p*=Mu,jBStimulated-Emission in Semicond^N~3 @_:Z +105 $M_@_:Z ,5Quantum-Well Lasers/ Low Threshold/ Series Resistance5 $M_@_:Z 9360;@baYablonovitch, E. //Kane, E. O. =q)3Bell Commun Res,Navesink Res Ctr/Red Bank//Nj/077013=q)FBand-Structure Engineering of Semiconductor-Lasers for CommunicationsF=q)10.2.1=q) Journal of Lightwave Technology=q) Article$M_@_1988$M_@_6$M_@_8$M_@_ 1292-1299 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles/Yablonovitch 1988.pdf,$M_@_$M_@_=+193$M_@_24930{@_{Sp4640433p$M_y{@_{Sp%:\\Aeron\Procite Databases\WCS\Articles\Kapon E 1989 07.pdf:p$M_y{@_{Sp+432p$M_y{@_{Sp4640433p$M_y{@_{Sp%:\\Aeron\Procite Databases\WCS\Articles\Kapon E 1989 07.pdf:p$M_y{@_{Sp+432p$M_y{@_{Sp4640433p$M_y{@_{Sp%:\\Aeron\Procite Databases\WCS\Articles\Kapon E 1989 07.pdf:p$M_y{@_{Sp+432p$M_y{@_{Sp4640433p$M_y{@_{Sp%:\\Aeron\Procite Databases\WCS\Articles\Kapon E 1989 07.pdf:p$M_y{@_{Sp+432p$M_y{@_{Sp4640es\Lear KL 1995 02.pdf:8hD/_r3`B=p|-̬ Electronics Letters`B=p|-̬ Article:$M_TCDE@_\\Aeron\Procite Databases\WCS\Articles\Kleinman DA 1983 07.pdf'f$M_o q@_qff$M_o q@_qf+170f$M_"o q@_qf25310;[?b Kleinman, D. A. //Miller, R. C.  d=@u+̬$At&T Bell Labs/Murray Hill//Nj/07974$d=@u+̬KBand-Gap Renormalization i q@_qf25310?oJz : ;@bKleinman, D. A. @=rb'Bell Tel Labs Inc/Murray Hill//Nj/07974'@=rb@Binding-Energy of Biexcitons and Bound Excitons in Quantum Wells@@=rb03.1.4$=rb "Physical Review B-Condensed Matter"@=rb Articlef$M_o q@_qf 1983 Jul 15 f$M_o q@_qf28f$M_o q@_qf2f$M_o q@_qf871-879f$M_o q@_qf%C\\As01mesant\Procite Databases\WCS\Articles\Kleinman DA 1983 07.pdf,f$M_o q@_qff$M_o q@_qf+170f'$M_o q@_qf25310;@b Kleinman, D. A. //Miller, R. C.  d=@u+̬$At&T Bell Labs/Murray Hill//Nj/07974$d=@u+̬KBand-Gap Renormalization in Semiconductor Quantum Wells Containing CarriersKd=@u+̬02.4.2=@u+̬ "Physical Review B-Condensed Matter"d=@u+̬ Article$M_TD@_<T Aug 15, 1985 $M_TD@_<T32$M_TD@_<T4$M_TD@_<ЈT 2266-2272 $M_TD@_<T%C\\As01mesant\Procite Databases\WCS\Articles\Kleinman DA 1985 08.pdfC$M_TD@_<T+103$M_TDЈ@_<T25320;1?cKoch, T. L. //Koren, U. =t:@4At&T Bell Labs,Microeletr Res Dept/Holmdel//Nj/077334=t:@/Semiconductor-LaseM}N~*;@cKoch, T. L. //Koren, U. =t:@4At&T Bell Labs,Microeletr Res Dept/Holmdel//Nj/077334=t:@/Semiconductor-Lasers for Coherent Optical Fiber/=t:@10.4.2=t:@ Journal of Lightwave Technology=t:@ Review89$M_:9<9@_<9O$89199089$M_:9<9@_<9O$89889$M_:9<9@_<9O$89389$M_:9<9@_<9O$89274-29389$M_:9<9@_<9O$89%?\\As01mesant\Procite Databases\WCS\Articles\Koch RL 1990 03.pdf,ر=t:@ر=t:@+11189$M_:9<9@_<9O$8925480j.=@&Nakamura, S. //Senoh, M. //Nagahama, S. //Iwasa, N. //Yamada, T. //Matsushita, T. //Kiyoku, H. //Sugimoto, Y. //Kozaki, T. //Umemoto, H. //Sano, M. //Chocho, K. C=qv4Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima4C=qvWContinuous-Wave Operation of InGaN/Gan/AlGaN-Based Laser Diodes Grown on GaN Subsnce of Ion-Bombardment of Grounded Rf Argon Glow-Discharges in a Planar System``=@r\08.2.3`=@r\`=@r\ Journal of Applied Physics`=@r\ Article$M_Ď@_4< 1985 Nov 1 $M_Ď@_4<58$M_Ď@_4<9$M_Ď@_4< 3350-3355 $M_Ď@_4<%;\\Aeron\Procite Databases\WCS\Articles\Kohler K 1985 11.pdf'$M__4<%;\\Aeron\Procite Databases\WCS\Articles\Kohler K 1985 11.pdf'$M_AqN~ 4hofer Inst Appl Solid State Phys/W-7800i1=rtAObservation of Bloch Oscillations in a Semiconductor SuperlatticeA1=rt04.3.11=rt Solid State Communications1=rt Review$M_ԕ@_̕Dec 1992$M_ԕ@_̕84$M_ԕ@_̕10$M_ԕ@_̕943-946$M_ԕ@_̕%:\\As01mesant\Procite Databases\WCS\Articles/Leo K 1992.pdf:1=rt*We report unambiguous experimental evidence for electron Bloch oscillations: The transient four-wave mixing signal of a biased semiconductor superlattice shows a periodic modulation with a time constant expected from Bloch oscillation theory. The oscillation frequency can be tuned over 400% with the applied electric field. The electron performs up to four oscillation cycles before the coherence is lost.$M_ԕ@_̕+115$M_ԕ@_̕,Stark$M_ԕ@_̕25560ysical Review a@/=`u ArticleW$M_4`$b@_bx4W Feb 1, 1992 W$M_4`$b@_bx4W45W$M_4`$b@_bxysical Review a@/=`u ArticleW$M_4`$b@_bx4W Feb 1, 1992 W$M_4`$b@_bx4W45W$M_4`$b@_bxysical Review a@/=`u ArticleW$M_4`$b@_bx4W Feb 1, 1992 W$M_4`$b@_bx4W45W$M_4`$b@_bxhN~4;@c(Lindberg, M. //Binder, R. //Koch, S. W. (@/=`uSUniv Arizona,Ctr Opt Sci/Tucson//Az/85721 ; Univ Arizona,Dept Phys/Tucson//Az/85721S@/=`u'Theory of the Semiconductor Photon-Echo'@/=`u05.1.4 =`u =`u Physical Review a@/=`u ArticleW$M_4`$b@_bx4W Feb 1, 1992 W$M_4`$b@_bx4W45W$M_4`$b@_bx4W3W$M_4`$b@_bx4W 1865-1875 W$M_4`$b@_bx4W%B\\As01mesant\Procite Databases\WCS\Articles\Lindberg M 1992 02.pdfBW$M_4`$b@_bx4W*The semiconductor Bloch equations are solved numerically for a two-pulse photon-echo configuration. The time-dependent diffracted signal is computed and the significance of many-body effects, carrier relaxation, and dephasing is investigated in detail. Assuming femtosecond-pulse excitation at various intensities and frequencies, distinctly different results are obtained if the exciton or the continuum electron-hole-pair states are excited. It is shown that pure exciton excitation produces a free-induction decay signal and no photon echo. An echo signal is obtained only if continuum states are excited either directly by choosing the central pulse frequencies appropriately or if the band-gap renormalization is sufficiently strong to shift continuum states into resonance. A cont;1?c(Lorke, A. //Kotthaus, J. P. //Ploog, K. (=Fu"$dUniv Hamburg,Inst Angew Phys,Jungiusstr 11/W-2000 Hamburg ; Univ Munich,Phys Sect/W-8000 Munich a:$M_MN@_Nd+185$M_MN@_Nd25590^N~844;@c(Lorke, A. //Kotthaus, J. P. //Ploog, K. (=Fu"$dUniv Hamburg,Inst Angew Phys,Jungiusstr 11/W-2000 Hamburg ; Univ Munich,Phys Sect/W-8000 Munich 22//Germany ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart=Fu"$d Coupling of Quantum Dots on GaAs =Fu"$d04.4.4=Fu"$d Physical Review Letters=Fu"$d Article$M_MN@_Nd 1990 MAY 21 $M_MN@_Nd64$M_MN@_Nd21$M_MN@_Nd 2559-2562 $M_MN@_Nd%?\\As01mesant\Procite Databases\WCS\Articles\Lorke A 1990 0f5.pdf?$M_MN@_Nd+185$M_MN@_Nd25590;Ӯ1?@8Cuthbert, J.D.//Thomas, D.G.=ФtZ<PFluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTeP=ФtZ<O01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO=ФtZ< Physical Review=ФtZ<AMERICAN PHYSICAL SOC$M_ԹĻ@__԰1967$M_ԹĻ@__԰154$M_ԹĻ@__԰3$M_ԹĻ@__԰763-771A=ФtZ<A=ФtZ<%C\\As01mesant\Procite Databases\WCS\Articles\Cuthbert JD 1967 02.pdfC$M_ԹĻ@__԰' 0031-899X $M_ԹĻ@__԰)5English A19679038000033 Copyright 2003 SciSearch Plus5$M_ԹĻ@__԰+166$M_ԹĻ@__԰65080ticle$M_l\@_Tl 1991 May 6 $M_l\@_Tl58$M_l\@_Tl18$M_l\@_Tl 2018-2020ticle$M_l\@_Tl 1991 May 6 $M_l\@_Tl58$M_l\@_Tl18$M_l\@_Tl 2018-2020ticle$M_l\@_Tl 1991 May 6 $M_l\@_Tl58$M_l\@_Tl18$M_l\@_Tl 2018-2020ticle$M_l\@_Tl 1991 May 6 $M_l\@_Tl58$M_l\@_Tl18$M_l\@_Tl 2018-2020imens$M_l\@_Tl18$M_l\@_Tl 2018-2020YN~,44j.=@g-Fukui, T.//Ando, S.//Tokura, Y.//Toriyama, T.-+=`nNNippon Telegraph & Tel Publ Corp,Musashino Elect Commun Lab,Basic Res Labs/Musashino/Tokyo ; Nippon Telegraph & Tel Publ Corp,Musashino Elect Commun Lab,Appl Electr Labs/Musashino+=`nNnGaAs Tetrahedral Quantum Dot Structures Fabricated Using Selective Area Metalorganic Chemical Vapor-Depositionn+=`nN06.5.2+=`nN Applied Physics Letters+=`nN Article$M_l\@_Tl 1991 May 6 $M_l\@_Tl58$M_l\@_Tl18$M_l\@_Tl 2018-2020 $M_l\@_Tl%?\\As01mesant\Procite Databases\WCS\Articles\Fukui T 1991 05.pdf?$M_l\@_Tl* New GaAs quantum dot structures, called tetrahedral quantum dots (TQDs), are proposed to make a zero-dimensional electron-hole system. The TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor dep;1?*g Kroemer, H.  8=qv%5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa58=qv%Polar-on-Nonpolar Epitaxy8=qv%06.3.18=qv% Journal of Crystal Growth8=qv% Article$M_:;@_;l1987$M_:;@_;l81$M_:;@_;l1-4$M_:;@_;l193-204$M_:;@_;l%7\\Aeroi-Au-Ge Contact to GaAsF=8TqȒ08.3.2=8TqȒ ^N~ 44D;@>gMKuan, T. S. //Batson, P. E. //Jackson, T. N. //Rupprecht, H. //Wilkie, E. L. M=8TqȒ7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=8TqȒFElectron-Microscope Studies of an Alloyed Au/Ni-Au-Ge Contact to GaAsF=8TqȒ08.3.2=8TqȒ Journal of Applied Physics=8TqȒ Article $M_,  @_ B, 1983 $M_,  @_ B, 54 $M_,  @_ B, 12 $M_,  @_ B,  6952-6957 $M_,  @_ B, %?\\As01mesant\Procite Databases\WCS\Articles/Kaun TS 1983 12.pdf?=8TqDȒ+151 $M_,  @_ B, 26430;@Rg*Kuan, T. S. //Wang, W. I. //Wilkie, E. L. *=;u7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=;uLong-Range Order in AlxGa1-xAs=;u=;u=;u07.3.3=;u Applied Physics Letters=;u Article$M_g,i@_$i 4 1987 Jul 6 $M_g,i@_$i 451$M_g,i@_$i 41$M_g,i@_$i 451-53$M_g,i@_$i 4%?\\As01mesant\Procite Databases\WCS\Articles\Kuan TS 1987 07.pdf,$M_g,i@_$;1?pgKuech, T. F. //Veuhoff, E. P=PqS 1Ibm Corp,Thomas J Watson Res Ctr,Pob 218/Yorktown1P=PqS .Mechanism of Carbo=PqS  Article :jN~G<<4ii 4$M_g,i@_$i 4+113$M_g,i@_$i 426450;@pgKuech, T. F. //Veuhoff, E. P=PqS 1Ibm Corp,Thomas J Watson Res Ctr,Pob 218/Yorktown1P=PqS .Mechanism of Carbon Incorporation in MOCVDGaAs.P=PqS 06.4.4P=PqS  Journal of Crystal GrowthP=PqS  Articlev$M_,@_av1984v$M_,@_av68v$M_,@_av1v$M_,@_av148-156v$M_,@_av%=\\As01mesant\Procite Databases\WCS\Articles/Kuech TF 1984.pdf=v$M_,@_av+170v$M_,@_av26480;t=?gKunzel, H. //Ploog, K. (y=hpo 7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007(y=hpo jThe Effect of AsApplied Physics Letters(y=hpo  Article$M_@_1980$M_@_37$M_@_4$M_@_416-418$M_@_%8\\Aeron\Procite Databases\WCS\Articles/Kunzel H 1980.pdf8$M_@_+191$%M_@_26520;Ԯ1?gKurtz, S. R. //Gordon, R. G. ȷ=ptK@*Harvard Univ,Dept Chem/Cambridge//Ma/02138*ȷ=ptK@AChemical Vapor-DepositigKurtz, S. R. //Gordon, R. G. ȷ=ptK@*Harvard Univ,Dept Chem/Cambridge//Ma/02138*ȷ=ptK@AChemical Vapor-Depositi,\/_}OT\-buffer was grown at low temperature and then the rest of the film was grown at higher temperatures. We found that this method of growth leads to a relatively small two-dimensional nucleation rate (approximately 20 nuclei/mum2 h) and high lateral growth rate (100 times faster than the vertical growth rate). This type of quasi-layer-by-layer growth results in a smooth surface morphology to within 100 angstrom. Growth on Si(100) leads to single-crystalline GaN films having the zinc-blende structure. Growth on Si(111) leads to GaN films having the wurtzitic structure with a large concentration of stacking faults. The crystallographic orientation and the surface morphology of GaN films on sapphire depends on the orientation of sapphire. To this date, the best films were grown on the basal plan e of sapphire.!$M_L!=PorQYPressure Studies of Gallium Nitride: Crystal-Growth and Fundamental Electronic-PropertiesY>=PorQ01.3.3 Electron Bandgapsy=PorQ "Physical Review B-Condensed Matter">=PorQ Article$M_@_r` 1992 June 15 $M_@_r`45$M_@_r`23$M_@_r` 13307-13313 $M_@_r`%;\\Aeron\Procite Databases\WCS\Articles\Perlin P 1992 06.pdf;$M_@_r`*Results o^N~<4Lp<@ +Moustakas, T. D. //Lei, T. //Molnar, R. J. +ȷ=t"@OBoston Univ,Dept Elect Comp & Syst Engn,Molec Beam Epitaxy Lab/Boston//Ma/02215Oȷ=t"@!Growth of GaN by ECR-Assisted MBE!ȷ=t"@06.1.1ȷ=t"@ Physica B ȷ=t"@ Article!$M_L!=PorQYPressure Studies of Gallium Nitride: Crystal-Growth and Fundamental Electronic-PropertiesY>=PorQ01.3.3 Electron Bandgapsy=PorQ "Physical Review B-Condensed Matter">=PorQ Article$M_@_r` 1992 June 15 $M_@_r`45$M_@_r`23$M_@_r` 13307-13313 $M_@_r`%;\\Aeron\Procite Databases\WCS\Articles\Perlin P 1992 06.pdf;$M_@_r`*Results orocite Databases\WCS\Articles\Perlin P 1992 06.pdf;$M_@_r`*Results o^N~gLD4 e/ Semiconductors/ Metalorganics/ Luminescence/ Gaas!$M_L!=PorQPolish Acad Sci,High Pressure Res Ctr,Sokolowska 29-37/Pl- ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart ; Aarhus Univ,Inst Phys & Astron/Dk-8000 Aarhus//Denmark>=PorQYPressure Studies of Gallium Nitride: Crystal-Growth and Fundamental Electronic-PropertiesY>=PorQ01.3.3 Electron Bandgapsy=PorQ "Physical Review B-Condensed Matter">=PorQ Article$M_@_r` 1992 June 15 $M_@_r`45$M_@_r`23$M_@_r` 13307-13313 $M_@_r`%@\\As01mesant\Procite Databases\WCS\Articles\Perlin P 1992 06.pdf@$M_@_r`*Results of experimental and theoretical studies of the fundamental electronic properties of GaN are presented. Single crystals of GaN grown by means of an equilibrium high-pressure technique have been use;U=?gLau, K. Y. //Yariv, A. 8y=(t2`VOrtel Corp/Alhambra//Ca/91803 ; Caltech,Dept Elect Engn & Appl Phys/Pasadena//Ca/91125V8y=(t2`$Ultrahigh Speed Semiconductor-Lasers$8y=(t2`10.5.18y=(t2` #IEEE Journal of Quantum Electronics#8y=(t2` Article$M_@_1985$M_@_21$M_@_2$M_@_26600+[K{nL4l3 Two-Dimensional Electrons in a Magnetic-FieldD=8uԫ02.5.3=8uԫ "Physical Review B-Condensed Matter"=8uԫ Article`$M_ik@_j` 1983 Mar 15P=8uԫP=8uԫ27`$M_ik@_j`6`$M_ik@_j` 3383-3389 `$M_ik@_j`%C\\As01mesant\Procite Databases\WCS\Articles\Laughlin RB 1983 03.pdf,@/hH9XXFP=8uԫP=8uԫ+196`$M_ik@_j`26620j.=@'.Sandroff, C. J. //Hegde, M. S. //Chang, C. C. .W=ppv̬Bellcore/Red Bank//Nj/07701W=ppv̬NStructure and Stability of Passivating Arsenic Sulfide Phases on GaAs-SurfacesNW=ppv̬08.2.1W=ppv̬ (Journal of Vacuum Science & Technology B(W=ppv̬ ArticleJ$M_$SU@_ U$J 1989 Jul-Aug J$M_$SU@_ U$J7J$M_$SU@_ U$J4J$M_$j.=Ԯ1?(PSandroff, C. J. //Hegde, M. S. //Farrow, L. A. //Chang, C. C. //Harbison, J. P. Pp=sԫ1Bellcore,331 Newman Springs Rd/Red Bank//Nj/077011p=sԫUElectronic Passivation of GaAs-Surfaces Through the Formation of Arsenic Sulfur BondsUp=sԫ08.2.1p=s"R~ dtSU@_ U$J841-844J$M_$SU@_ U$J%C\\As01mesant\Procite Databases\WCS\Articles\Sandroff CJ 1989 07.pdfC=ppv̬+105J'$M_$SU@_ U$J10230j.=@(PSandroff, C. J. //Hegde, M. S. //Farrow, L. A. //Chang, C. C. //Harbison, J. P. Pp=sԫ1Bellcore,331 Newman Springs Rd/Red Bank//Nj/077011p=sԫUElectronic Passivation of GaAs-Surfaces Through the Formation of Arsenic Sulfur BondsUp=sԫ08.2.1p=sԫ Applied Physics Lettersp=sԫ Article$M_@_ 1989 Jan 23 $M_@_54$M_@_4$M_@_362-364$M_@_%C\\As01mesant\Procite Databases\WCS\Articles\Sandroff CJ 1989 01.pdf,X{hH9XXFp=sԫ+145$M_@_10240(1966). H. J. Hovel, et al., Ga.sub.1.sub.-x Al.sub.x As-GaAs P-P-N Heterojunction Solar Cells,J. Electrochem. Soc. vol. 120, No. 9, pp. 1246-1252 (1973). R. Davis, et al., Operation of GaAs Solar Cel(1966). H. J. Hovel, et al., Ga.sub.1.sub.-x Al.sub.x As-GaAs P-P-N Heterojunction Solar Cells,J. Electrochem. Soc. vol. 120, No. 9, pp. 1246-1252 (1973). R. Davis, et al., Operation of GaAs Solar Cel(1966). H. J. Hovel, et al., Ga.sub.1.sub.-x Al.sub.x As-GaAs P-P-N Heterojunction Solar Cells,J. Electrochem. Soc. vol. 120, No. 9, pp. 1246-1252 (1973). R. Davis, et al., Operation of GaAs Solar Cel@pM} UlT4<@Bell, Ronald L.-Solar energy converter with waste heat engine-12.3.2605045 US4002031 US 1/11/1977 !IL0049906A0 IL0049906A1 US4002031!1US2946945 US2989575 US3675026 US3822692 US38417381W. A. Beckman, et al., Design Considerations for a 50-Watt Photovoltaic Power System Using Concentrated Solar Energy,Solar Energy, vol. 10, No. 3, pp. 132-136 (1966). H. J. Hovel, et al., Ga.sub.1.sub.-x Al.sub.x As-GaAs P-P-N Heterojunction Solar Cells,J. Electrochem. Soc. vol. 120, No. 9, pp. 1246-1252 (1973). R. Davis, et al., Operation of GaAs Solar Cells at High Solar Flux Density,Solar Energy, vol. 17, p. 145 (1975)."SUS4062698 US4097309 US4249516 US4282858 US4444992 US4490981 US5404869 US5577492 US6080927 US6177761 US4106952 US4130445 US4395582 US4423599 US5095707 US5101632 US5721795 US5806955 US4167937 US4233959 US4710588 US5009243 US5676453 US5677972 US4042417 US4056405 US4135537 US4149903 US4323052 US4339626 US4512157 US4577471 US5577w493 US5655832S%;\\As01mesant\Procite Databases\WCS\Patents\US04002031__.pdf;'F03G 7/2; H01L 31/6+34540A New Double Heterostructure Optoelectronic Switching Device Using Molecular-Beam EpitaxyYf=Yp,11.4.1f=Yp,f=A New Double Heterostructure Optoelectronic Switching Device Using Molecular-Beam EpitaxyYf=Yp,11.4.1f=Yp,f=lesinger, T. E. //Kuech, T. F.=u|Qԫ=u|QԫaCarnegie Mellon Univ,Dept Elect & Comp ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598a=u|QԫXDetermination of the Interdiffusion of Al and Ga in Undoped (Al,Ga)as/GaAs Quantum-WellsX=u|Q=mN~=HoB US5578839 =HoBJP=HoB 11/26/1996 =HoB+DE69319854C0 DE69319854T2 EP0599224A1 EP0599224B1 EP0844675A2 EP0844675A3 JP02560963B2 JP02560964B2 JP02713094B2 JP02713095B2 JP02809045B2 JP06209120A2 JP06260680A2 JP06260681A2 JP06260682A2 JP06260683A2 KR9707135B1 KR9707135Y1 US5578839 US5734182 US5747832 US5880486 US6078063 US6215133B1 US6215133+=HoBUS5237182 US5323027=HoB "Japanese Journal of Applied Physics, vol. 31, No. 10B, Oct. 15, 1992, Tokyo, Japan, pp. L1457-L1459, S. Nakamura et al., ""High-Quality InGaN Films Grown on GaN Films"".; Patent Abstracts of Japan, vol. 15, No. 470 (E-1139) Nov. 28, 1991 \A JP-A-03 203 388 (Matsushita Electric Ind Co Ltd) Sep. 5, 1991 (abstract).; Applied Physics Letters, vol. 62, No. 19, May 10, 1993, New York, U.S., pp. 2390-2392, S. Nakamura et al.;1?0kZhang, Z. Y. //Lagally, M. G. 0= Gv?Oak Ridge Natl Lab,Div Solid State,Pob 2008,Oak Ridge,Tn 37831 ; Univ Wisconsin,Dept Mat Sci & Engn,Madison,Wi 53706 ; Univ Wisconsin,Dept Phys,Madison,Wi 537060= Gv?;Atomistic Processes in the Early Stages of Thin-Film Growth;0= Gv?06.2.40= Gv? Science0= Gv? Review$M_d@_h; Apr 18, 1997 $M_d@_h;276$M_d@_h;5311$M_d@_h;377-383$M_d@_h;%;\\Aeron\Procite Databases\WCS\Articles\Zhang ZY 1997 04.^N~T4|08.1.1=u|Qԫ Applied Physics Letters=u|Qԫ Article$M_@_^j 1986 Sep 1 $M_@_^j49$M_@_^j9$M_@_^j519-521$M_@_^j%F\\As01mesant\Procite Databases\WCS\Articles\Schlesinger TE 1986 09.pdf,=u|Qԫ =u|Qԫ=u|Qԫ+143$M_@_^j27210(=@%Nakamura, Shuji//Mukai, T.//Iwasa, N.$=HoB=HoBBLight-emitting gallium nitride-based compound semiconductor deviceB=HoB11.1.2=HoB Nichia Chemical Industries, Ltd. =HoB700863;1?0kZhang, Z. Y. //Lagally, M. G. 0= Gv?Oak Ridge Natl Lab,Div Solid State,Pob 2008,Oak Ridge,Tn 37831 ; Univ Wisconsin,Dept Mat Sci & Engn,Madison,Wi 53706 ; Univ Wisconsin,Dept Phys,Madison,Wi 537060= Gv?;Atomistic Processes in the Early Stages of Thin-Film Growth;0= Gv?06.2.40= Gv? Science0= Gv? Review$M_d@_h; Apr 18, 1997 $M_d@_h;276$M_d@_h;5311$M_d@_h;377-383$M_d@_h;%;\\Aeron\Procite Databases\WCS\Articles\Zhang ZY 1997 04.@_h;377-383$M_d@_h;%;\\Aeron\Procite Databases\WCS\Articles\Zhang ZY 1997 04.k+[~D|\4, ""High-Power InGaN/GaN Double-Heterostructure Violet Light Emitting Diodes,"" p. 2390, col. 1, line 1-col. 2, line 21*." =HoB"US5665986 US5684309 US5734182 US5739554 US5747832 US5751013 US5756374 US5767533 US5811319 US5834325 US5851905 US5856682 US5863811 US5880486 US5888886 US5895225 US5909040 US5929466 US5945689 US5962875 US5990496 US5998232 US6005258 US6 023077 US6074889 US6078063 US6087681 US6104044 US6115399 US6120600 US6133058 US6136626 US6159005 US6162656 US6187606 US6201262 US6204084 US6215133 US6218269 US6252254 US6265726 US6266355 US6278135 US6 284395 US6288416 US6297538 US6299338 US6320213 US6359292 US6373077 US6373188 US6376866=HoB%;\\As01mesant\Procite Databases\WCS\Patents\US05578839__.pdf; =HoB' H01L 33/0 =HoB+52=HoB63930;@0kZhang, Z. Y. //Lagally, M. G. 0= Gv?Oak Ridge Natl Lab,Div Solid State,Pob 2008,Oak Ridge,Tn 37831 ; Univ Wisconsin,Dept Mat Sci & Engn,Madison<=?&AReichelt, Achim//Winzer, Gerhard//Baues, Peter//Mahlein, Hans F. A=Uo<+-Controllable, electro-optical grating coupler-=Uo<+05.2.7=Uo<+512710=Uo<+ US4006963 =Uo<+DT=Uo<+2/8/1977=Uo<+[BE0833114A DE2442723A1 FR2284129A1 FR2284129B1 GB1514212A IT1041950A JP51094975A2 US4006963[=Uo<+'US372/8/1977=Uo<+[BE0833114A DE2442723A1 FR2284129A1 FR2284129B1 GB1514212A IT1041950A JP51094975A2 US4006963[=Uo<+'US37N~N~7\4d4s; nucleation and dynamics of the stable nucleus; atom attachment to and detachment from terraces and islands; and interlayer mass transport. Ways to manipulate the growth kinetics in order to select a desired growth mode are briefly addressed.$M_d@_h;+109$M_d@_h;,Scanning-Tunneling-Microscopy/ Molecular-Beam Epitaxy/ Growth/ Diff usion-Limited Aggregation/ Energy-Electron Diffraction/ Surface Self-Diffusion/ Metal-Surfaces/ Homoepitaxial Growth/ Island Morphology/ Cluster$M_d@_h;27440<@&AReichelt, Achim//Winzer, Gerhard//Baues, Peter//Mahlein, Hans F. A=Uo<+-Controllable, electro-optical grating coupler-=Uo<+05.2.7=Uo<+512710=Uo<+ US4006963 =Uo<+DT=Uo<+2/8/1977=Uo<+[BE0833114A DE2442723A1 FR2284129A1 FR2284129B1 GB1514212A IT1041950A JP51094975A2 US4006963[=Uo<+'US3795433 US3813142 US3904270 US3912363'=Uo<+"5US4730888 US4737007 US5303316 US5412743 US5581642 US5586206 US5703710 US5732177 US6356674 US4759595 US4801184 US6297899 ;1?Xk+Vassell, M. O. //Lee, J. //Lockwood, H. F. +=X[r|4ȒGte Labs Inc/Waltham//Ma/02254=X[r|4Ȓ)Multibarrier Tunneling in Ga1-xAlxAs/GaAs)=X[r|4Ȓ04.1.1.1=X[r|4Ȓ Journal of Applied Physics=X[r|4Ȓ Article "Physical Review B-CondeCondewYIy <ovided by bond formation between the II and VI elements, relative to formation of bulk elemental deposits. This method is the electrochemical equivalent of atomic layer epitaxy (ALE), and is thus referred to as "electrochemical atomic layer epitaxy" (ECALE). This paper describes the first example of the ECALE method, involving the thin-layer electrodeposition of CdTe on a Au polycrystalline electr ode. @_t 9@_9kt +73 @_t 9@_9kt ,Cdte Thin-Films/ Cadmium-Sulfide Films/ Diethylene Glycol Solutions/ Single-Crystal Surfaces/ Junction Solar -Cells/ P-Type Cdte/ Cathodic Electrodeposition/ Photoelectrochemical Behavior/ Structural Characterization/ Chalcogenide Layers @_t 9@_9kt 61980w;@$BHolmes, D. E. //Chen, R. T. //Elliott, K. R. //Kirkpatrick, C. G. B8=XpU2Rockwell Int,Ctr Res & Dev/Thousand Oaks//Ca/9136028=XpUMStoichiometry-Controlled Compensation in Liquid Encapsulated Czochralski GaAsM8=XpU06.08=XpU Applied Physics Letters8=XpU Article@_@_O1982@_@_O40@_@_O1@_@_O46-48@_@_O%>\\As01mesant\Procite Databases\WCS\Articles/Holmes DE 1982.pdf>@_@_O+264/@_@_O9410d>ҹL?LbKaminska, M//Liental WZ//Weber, ER//George, T//Kortright, JB//Smith, FW//Tsaur, B.Y.//Calawa, A.R.bHFYStructural-Properties of As-Rich GaAs Gy 9~2l4M<@Gregory, B. W.//Stickney, J. L.=qV@*Univ Georgia,Sch Chem Sci/Athens//Ga/30602*=qV@,Electrochemical Atomic Layer Epitaxy (Ecale),=qV@06.0=qV@ &Journal of Electroanalytical Chemistry&=qV@ Review @_t 9@_9kt 1991 @_t 9@_9kt 300 @_t 9@_9kt 1-2 @_t 9@_9kt 543-561 @_t 9@_9kt 112(1) @_t 9@_9kt %C\\As01mesant\Procite Databases\WCS\Articles/Donnelly VM 1982 11.pdf, @_t 9@_9kt  @_t 9@_9kt *Electrodeposition holds promise as a low cost, flexible room temperature technique for the production of II-VI compound semiconductors. Previous studies, however, have resulted in the production of polycrystalline deposits in every case. This paper describes a new method, developed in this laboratory, for depositing these materials epitaxially. The method involves the alternate deposition of the component elements a monolayer at a time. To limit deposition to a monolayer, underpotential deposition (UPD) is employed. UPD occurs because of the enhanced stability provided by bond formation between the II and VI elements, relative to formation of bulk elemental deposits. This method is the electrochemical equivalent of atomic layer epitaxy (ALE), and is thus refew;1?$BHolmes, D. E. //Chen, R. T. //Elliott, K. R. //Kirkpatrick, C. G. B8=XpU2Rockwell Int,Ctr Res & Dev/Thousand Oaks//Ca/9136028YStructural-Properties of As-Rich GaAs G^N~d>@LbKaminska, M//Liental WZ//Weber, ER//George, T//Kortright, JB//Smith, FW//Tsaur, B.Y.//Calawa, A.R.bHFYStructural-Properties of As-Rich GaAs Grown by Molecular Beam Epitaxy at Low TemperaturesHFHFHFHF=HF07.1.7HF Applied Physics LettersHF1989HF>54HF>19HF> 1881-1883 HF>%?\\As01mesant\Procite Databases\WCS\Articles/Kaminska M 1989.pdf?HF>' 0003-6951 HF>)English Univ Calf Berkeley Lawrence Berkely Lab, Dept Math Sci & Mineral Engn, Ctr Adv Mat<|=?DJames, Lawrence W.=0p<:Solar cells employing stacked opposite conductivity layers:=0p<11.3.7=0p<605045=0p< US4017332 =0p<US=0p< 4/12/1977 =0p<^DE2607005A1 DE2607005C2 FR2302593A1 FR2302593B1 IL0048996A0 IL0048996A1 JP51132793A2 US4017332^=0p<'US2949498 US3015762 US3046459 US3186873'=0p<"SUS4332974 US4377723 US5374317 US5376185 US4255211 US4272641 US4404421 US4607272 US4914489 US5216543 US6300557 US6300558 US4292461 US4295002 US4688068  =0p<58058 US4292461 US4295002 US4688068 ^N~ t4, Berkeley, CA, 94720 Univ Calif Berkeley Lawrence Berkeley Lab, Ctr XRay Opt, Berkeley, CA, 94720 MIT, Lincoln Lab, Lexington, MA, 02173 U4438 Copyright 2003 SciSearch PlusHF>F+287HF>65100<@DJames, Lawrence W.=0p<:Solar cells employing stacked opposite conductivity layers:=0p<11.3.7=0p<605045=0p< US4017332 =0p<US=0p< 4/12/1977 =0p<^DE2607005A1 DE2607005C2 FR2302593A1 FR2302593B1 IL0048996A0 IL0048996A1 JP51132793A2 US4017332^=0p<'US2949498 US3015762 US3046459 US3186873'=0p<"SUS4332974 US4377723 US5374317 US5376185 US4255211 US4272641 US4404421 US4607272 US4914489 US5216543 US6300557 US6300558 US4292461 US4295002 US4688068 US4829346 US5316593 US5342453 US6316715 US6340788 US4127862 US4128733 US4133699 US4156310 US4179308 US4179702 US4186407 US4206002 US4278474 US4286275 US4395727 US4400221 US6150603 US6255580S=0p<%;\\As01mesant\Procite Databases\WCS\Patents\US04017332__.pdf;=0p<' H01L 31/6 =0p<+34%=0p<580733 ; at&T Bell Labs/Murray Hill//Nj/07974ja=xDu>6Delocalized Excitons in Semiconductor Heterostructures6a=xDu>03.1.3733 ; at&T Bell Labs/Murray Hill//Nj/07974ja=xDu>6Delocalized Excitons in Semiconductor Heterostructures6a=xDu>03.1.3 9 <l,|:@_t:P-9$M_D9|:@_t:P- 4230-4243 $M_D9|:@_t:P-%B\\As01mesant\Procite Databases\WCS\Articles\Legoues FK 1992 05.pdfB$M_D9|:@_t:P-*Compositionally graded films of SiGe/Si(100) and GaInAs/GaAs were grown under different conditions in order to investigate the different modes of strain relaxation associated with the compositional grading. We show that, when the growth conditions are very clean and the gradient is shallow enough (about 1% misfit per half micron), very good, relaxed films are obtained. This coincides with the introduction of large numbers of dislocations in the substrate itself, which is counter-intuitive at first since the substrate is under negligible strain. We show that this introduction of dislocations is the result of the activation of novel Frank-Read-like sources located in the graded region, and is directly correlated to the lack of other low energy nucleation sites for dislocations. We detail the conditions of growth necessary for this phenomenon to occur, and show that it operates both for the SiGe/Si system and the GaInAs/GaAs system. Pure, relaxed Ge films ha ve been grown in this manner on Si(100), with a defect density as low as 10(6)/cm2.$M_D9|:@_t:P-+141$M_D9|:@_t:P-,xMisfit Dislocation Reduction / Ge0.5 Si0.5 Alloys/ Layer Superlattices/ Epitaxial Multilayers/ Growth/ Interface/ Defectsx$M_D9|:@_t:P-28690j.=1?z+Clarke, S. //Vvedensky, D. D. =p&u ̬0Univ London Imperial Coll Sci & Technol,Blackett0=p&u ̬Origin of Reflec25 4$M_=?@_? 458%UN~:t4|=hrLԫ Applied Physics Letters|=hrLԫ Article$M_@_K̿ 1987 Jul 6 $M_@_K̿51$M_@_K̿1$M_@_K̿33-35$M_@_K̿%C\\As01mesant\Procite Databases\WCS\Articles\Sandroff CJ 1987 07.pdf,hH9XXFhh=hrLԫ+491$M_@_K̿5010;@pBLegoues, F. K. //Meyerson, B. S. //Morar, J. F. //Kirchner, P. D. B=`qR1Ibm Corp,Thomas J Watson Res Ctr,Div Res/Yorktown1=`qR]Mechanism and Conditions for Anomalous Strain Relaxation Graded Thin-Films and Superlattices]=`qR07.2.2=`qR Journal of Applied Physics=`qR Article$M_D9|:@_t:P- May 1, 1992 $M_D9|:@_t:P-71$M_D9|:@_t:P-9$M_D9|:@_t:P- 4230-4243 $M_D9|:@_t:P-%B\\As01mesant\Procite Databases\WCS\Articles\Legoues FK 1992 05.pdfB$M_D9|:@_t:P-*Compositionally graded films of SiGe/Si(100) and GaInAs/GaAs were grown under different conditions in order to investigate the different modes of strain relaxation assocj.=1?z+Clarke, S. //Vvedensky, D. D. =p&u ̬0Univ London Imperial Coll Sci & Technol,Blackett0=p&u ̬Origin of ReflecV=p&u ̬+1904$M_=?@_? 411130(XHC+j.=@z+Clarke, S. //Vvedensky, D. D. =p&u ̬0Univ London Imperial Coll Sci & Technol,Blackett0=p&u ̬Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations During Molecular-Beam Epitaxy - a Computational Modeling Approach=p&u ̬06.2.4=p&u ̬ Physical Review Letters=p&u ̬ Article4$M_=?@_? 4 1987 May 25 4$M_=?@_? 4584$M_=?@_? 4214$M_=?@_? 4 2235-2238 4$M_=?@_? 4%@\\As01mesant\Procite Databases\WCS\Articles\Clarke S 1987 05.pdf@[=p&u ̬+1904$M_=?@_? 411130 because of the largely different covalent radii of the Ga and the N atom.3HF8+155HF8HF8 dge PL lines by 27 +/- 2 meV and the E(2) Raman mode by 4.2 +/- 0.3 cm(-1) by use of the listed isotropic elastic constants. It is expected from the analyses that stoichiometric variations in the GaN  dge PL lines by 27 +/- 2 meV and the E(2) Raman mode by 4.2 +/- 0.3 cm(-1) by use of the listed isotropic elastic constants. It is expected from the analyses that stoichiometric variations in the GaN  dge PL lines by 27 +/- 2 meV and the E(2) Raman mode by 4.2 +/- 0.3 cm(-1) by use of the listed isotropic elastic constants. It is expected from the analyses that stoichiometric variations in the GaN  dge PL lines by 27 +/- 2 meV and the E(2) Raman mode by 4.2 +/- 0.3 cm(-1) by use of the listed isotropic elastic constants. It is expected from the analyses that stoichiometric variations in the GaN !QN~+e of a biaxial and a hydrostatic strain that can be present in GaN thin films. The biaxial strain originates from growth on lattice-mismatched substrates and from post-growth cooling. An additional hydrostatic strain is shown to be introduced by the presence of point defects. A consistent description of the experimental results is derived within the limits of the linear and isotropic elastic theory using a Poisson ratio v = 0.23 +/- 0.06 and a bulk modulus B = 200 +/- 20 GPa. These isotropic elastic constants help to judge the validity of published anisotropic elastic constants that vary great ly. Calibration constants for strain-induced shifts of the near-bandedge PL lines with respect to the Ea Raman mode are given for strain-free, biaxially strained, and hydrostatically contracted or exp anded thin films. They allow us to extract differences between hydrostatic and biaxial stress components if present. In particular, we determine that a biaxial stress of one GPa would shift the near-b and-edge PL lines by 27 +/- 2 meV and the E(2) Raman mode by 4.2 +/- 0.3 cm(-1) by use of the listed isotropic elastic constants. It is expected from the analyses that stoichiometric variations in the GaN thin films together with the design of specific buffer layers can be utilized to strain engineer the material-to an extent that greatly exceeds the possibilities known from other semiconductor sy;1?qDassarma, S. //Madhukar, A. Xi=8|s2̬`Univ So Calif,Dept Phys/Los Angeles//Ca/90007 ; Univ So Calif,Dept Mat Sci/Los Angeles//Ca/90007`Xi=8|s2̬XCollective modes of spatially separated, two-component, two-dimensional plasma in solids Xi=8|s2̬Xi=8|s2̬^N~|4 GaN thin films together with the design of specific buffer layers can be utilized to strain engineer the material-to an extent that greatly exceeds the possibilities known from other semiconductor sy stems because of the largely different covalent radii of the Ga and the N atom.3HF8+155HF8HF8HF8,ELECTRONIC-STRUCTURE/ EPITAXIAL LAYER/ GALLIUM NITRIDE/ GREEN/ GROWTH/ HETEROSTRUCTURE/ LIGHT-EMITTING-DIODES/ NATIVE DEFECTS/ PRESSURE/ SAPPHIRE(HF865110;@qDassarma, S. //Madhukar, A. Xi=8|s2̬`Univ So Calif,Dept Phys/Los Angeles//Ca/90007 ; Univ So Calif,Dept Mat Sci/Los Angeles//Ca/90007`Xi=8|s2̬XCollective modes of spatially separated, two-component, two-dimensional plasma in solids Xi=8|s2̬Xi=8|s2̬Xi=8|s2̬Xi=8|s2̬ Xi=8|s2̬Xi=8|s2̬Xi=8|s2̬Xi Technol,Dept Appl Phys/2628 Cj Delft//Netherlands ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/EnglandX/=zԫIQuantized Conductance of Point Contacts in a Two-Dimensional Electron-GasIX/=zԫ04.4.3X/=zԫ Physical Review LettersX/=zԫ Article$M_@_| 1988 Feb 29 $M_@_|60$M_@_|9$M_9$M_N~~L* suggesting that adding or removing charge from a filled Landau level rapidly degrades its spin polarization.^$M_gi@_in^+176^$M_gi@_in^,XLay er Electron-System/ Energy-Spectrum/ Magnetic-Field/ Hierarchy/ Integer/ States/ WellX^$M_gi@_in^29180w;@:%XKnox, W. H. //Hirlimann, C. //Miller, D. A. B. //Shah, J. //Chemla, D. S. //Shank, C. V.X&=)s̬ At&T Bell Labs/Holmdel//Nj/07733 &=)s̬LFemtosecond Excitation of Nonthermal Carrier Populations GaAs Quantum-WellsL&=)s̬03.2.1&=)s̬ Physical Review Letters&=)s̬ Article]$M_Lf\\Aeron\Procite Databases\WCS\Articles\Goodnick SM 1988 02.pdf'@/hH9XXF=XKuԫ+133D$M_MO@_NhND29190>nL* 04.pdfCHHB*XRelaxation of a nonequilibrium distribution of electrons and holes in GaAs following femtosecond photoexcitation is investigated via spectrally and time-resolved luminescence. A rapid onset of luminescence over a broad range shows that both electrons and holes are redistributed over a wide energy range within 100 fs, even at excitation densities as low as 10(17) cm-3. The data demonstrate carrier-carrier scattering rates higher than predicted by calculations with a statically screened interaction potential. Monte Carlo simulations using dynamical screening account for the experimental results.XHHB+182HHB,yElectron-Hole-Interaction/ Monte-Carlo/ Quantum Wells/ Carr qiers/ Relaxation/ Dynamics/ Semiconductors/ Scattering/ AlgaasyHHB29160;@q7Fertig, H. A. //Brey, L. //Cote, R. //Macdonald, A. H. 7=(sDԫ Univ Kentucky,Dept Phys & Astron/Lexington//Ky/40506 ; Univ Autonoma Madrid,Csic,Inst Ciencia Mat/E-28049 ; Univ Sherbrooke,Dept Phys/Sherbrooke J1k 2r1/Pq/Canada ; Univ Sherbrooke,Ctr Rech Phys Solide/Sherbrooke J1k ; Indiana Univ,Dept Phys/Bloomington//in/47405 =(sDԫ^Charged Spin-Texture Excitations and the Hartree-Fock Approximation in the Quantum Hall-Effect^=(sDԫ02.5.3=(sw;1?:%XKnox, W. H. //Hirlimann, C. //Miller, D. A. B. //Shah, J. //Chemla, D. S. //Shank, C. V.X&=)s̬ At&T Bell Labs/Holmdel//Nj/07733 &=)s̬LFemtosecond Excitation of Nonthermal Carrier Populations GaAs Quantum-WellsL&=)s̬03.2.1&=)s̬ Physic̬ Physic7gN~b|4jԫ=zԫ+1196$M_@_|5150;@q0Elsaesser, T. //Shah, J. //Rota, L. //Lugli, P. 0HHBAt&T Bell Labs/Holmdel//Nj/07733 ; Univ Modena,Dipartmento Fis/I-41100 Modena//Italy ; Univ Rome 2,Dipartimento Ingn Meccan/I-00173 Rome//Italy ; Tech Univ Munich,Dept Phys E11/W-8000 Munich 2//GermanyHHBhInitial Thermalization of Photoexcited Carriers in GaAs studied by Femtosecond Luminescence SpectroscopyhHHBR01.6.2 Ultrafast Carrier-Carrier Scattering: Response to Ultrashort Optical PulsesRHHB Physical Review LettersHHB ArticleHHB 1991 April 1 HHB66HHB13HHB 1757-1760 HHB%C\\As01mesant\Procite Databases\WCS\Articles\Elsaesser T 1991 04.pdfCHHB*XRelaxation of a nonequilibrium distribution of electrons and holes in GaAs following femtosecond photoexcitation is investigated via spectrally and ;[?q7Fertig, H. A. //Brey, L. //Cote, R. //Macdonald, A. H. 7=(sDԫ Univ Kentucky,Dept Phys & Astron/Lexington//Ky/40506 ; Univ Autonoma Madrid,Csic,Inst Ciencia Mat/E-28049 ; Univ Sherbrooke,Dept Phys/Sherbrooke J1k 2r1/Pq/Canada ; Univ Sherbrooke,Ctr Rech Phys Solide/Sherbrooke J1k ; Indiana Univ,Dept Phys/Bloomington//in/47405 =(sDԫ^Charged Spin-Texture Excitations and the Hartree-Fock Approximation in the Quantum Hall-Effect^=(sDԫ02.5.3=(sic0` P4;@rGoodnick, S. M. //Lugli, P. @=XKuԫqOregon State Univ,Dept Elect & Comp Engn/Corvallis//or/97331 ; Univ Modena,Departimento Fis/I-41100 Modena//Italyq@=XKuԫZEffect of Electron-Electron Scattering on Nonequilibrium Transport in Quantum-Well SystemsZ@=XKuԫ03.2.1@=XKuԫ "Physical Review B-Condensed Matter"@=XKuԫ ArticleD$M_MO@_NhND 1988 Feb 15 =XKuԫ37D$M_MO@_NhND5D$M_MO@_NhND 2578-2588 D$M_MO@_NhND%C\\As01mesant\Procite Databases\WCS\Articles\Goodnick SM 1988 02.pdf,@/hH9XXF=XKuԫ+133D$M_MO@_NhND29190 ; Equipe Microelectr Montpellier/F-34000 Montpellier//France ; Ctr Natl Etud Telecommun/F-22301 Lannion//France=tMObservation of the Wannier-Stark Quantization ; Equipe Microelectr Montpellier/F-34000 Montpellier//France ; Ctr Natl Etud Telecommun/F-22301 Lannion//France=tMObservation of the Wannier-Stark Quantization$M_DF@_F; 1639-1642 ;$M_DF@_F;%;\\Aeron\Procite Databases\WCS\Articles\Voisin P 1988 10.pdf';$M_DF@_F;;$M_DF@_F;+285;$M_DF@_F;5170; m=?rbGoldhabergordon, D. //Shtrikman, H. //Mahalu, D. //Abuschmagder, D. //Meirav, U. //Kastner, M. A. b8N=u*YMit,Dept Phys,Cambridge,Ma 02139 ; WeizN~L 4 coupled by quantum-mechanical tunnelling to the delocalized electrons in the transistor's leads, If this is so, a SET could provide a means of investigating aspects of the Kondo effect under controlled circumstances that are not accessible in conventional systems: the number of electrons can be changed from odd to even, the difference in energy between the localized state and the Fermi level can  be tuned, the coupling to the leads can be adjusted, voltage differences can be applied to reveal non-equilibrium Kondo phenomena: and a single localized state can be studied rather than a statistical distribution. But for SETs fabricated previously, the binding energy of the spin singlet has been too small to observe Kondo phenomena, Ralph and Buhrman(8) have observed the Kondo singlet at a singl e accidental impurity in a metal point contact, but with only two electrodes and without control over the structure they were not able to observe all of the features predicted, Here we report measurem ents on SETs smaller than those made previously, which exhibit all of the predicted aspects of the Kondo effect in such a system.s$M_|~@_~Ns+143s$M_|~ @_~Ns,iAnderson Model/ Quantum-Dot/ Artificial Atoms/ Equilibrium/ Conductance/ Resonance/ Impurity/ States/ Gasis$M_|~@_~Ns29200;1?$r Hybertsen, M. S. //Louie, S. G.  @=nt#0Univ Calif Berkeley,Dept Phys/Berkeley//Ca/947200@=nt#Abinitio Stati, G. //Ludeke, R. //Jugnet, Y. //Morar, J. F. //Himpsel, F. J. G(=q*7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987 tN~24;@rbGoldhabergordon, D. //Shtrikman, H. //Mahalu, D. //Abuschmagder, D. //Meirav, U. //Kastner, M. A. b8N=u*YMit,Dept Phys,Cambridge,Ma 02139 ; Weizmann Inst Sci,Dept Condensed Matter Phys,Braun CtrY8N=u*,Kondo Effect in a Single-Electron Transistor,8N=u*09.1.78N=u* Nature8N=u* Articles$M_|~@_~Ns Jan 8, 1998 s$M_|~@_~Ns391s$M_|~@_~Ns6663s$M_|~@_~Ns156-159s$M_|~@_~Ns%G\\As01mesant\Procite Databases\WCS\Articles/Goldhabergordon 1998 01.pdfG=u**How localized electrons interact with delocalized electrons is a central question to many problems in sold-state physics(1-3). The simplest manifestation of this situation is the Kondo effect, which occurs when an impurity atom with an unpaired electron is placed in a metal(2), At low temperatures a spin singlet state is formed between the unpaired localized electron and delocalized electrons at the Fermi energy, Theories predict(4-7) that a Kondo singlet should form in a single-electron transistor (SET), which contains a confined 'droplet' of electrons coupled by quantum-mechanical tunnelling to the delocalized electrons in the transistor's leads, If this is so, a SET could provide a means of investigating aspects of the Kondo effect under controll;1?$r Hybertsen, M. S. //Louie, S. G.  @=nt#0Univ Calif Berkeley,Dept Phys/Berkeley//Ca/947200@=nt#Abinitio StatiF. J. G(=q*7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987^N~4̬.InGaAs Vertical-Cavity Surface-Emitting Lasers.=Hu9̬11.2.1=Hu9̬ #IEEE Journal of Quantum Electronics#=Hu9̬ Article$M_ @_9 1991 JUN$M_ @_9 27$M_ @_9 6$M_ @_9  1359-1367 $M_ @_9 %@\\As01mesant\Procite Databases\WCS\Articles\Geels RS 1991 06.pdf@=Hu9̬*In this paper we give theoretical and experimental results for verticla-cavity surface-emitting lasers (VCSEL's). The modeling is applied to the design of InGaAs VCSEL's. A simple method is introduced to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors. The theoretical predictions are compared to results from actual device measurements. A novel t;[?~r(Ludeke, R. //Chiang, T. C. //Miller, T. (HFIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801HF-Schottky-Barrier Formation of Ag on GaAs(110)-HF02.2HF (Journal of Vacuum Science & Technology B(HF ArticleHF & July 1983 HF &1HF &3HF &581-587HF &%;\\Aeron\Procite Databases\WCS\Articles/Ludeke R 1983 g07.pdf;HF &+123HF &29310^N~4;@VrGLandgren, G. //Ludeke, R. //Jugnet, Y. //Morar, J. F. //Himpsel, F. J. G(=q*7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987(=q**The Oxidation of GaAs(110): a Reevaluation*(=q*08.1.2(=q* (Journal of Vacuum Science & Technology B((=q* Article$M_,@_3, July 1984 $M_,@_3,2$M_,@_3,3$M_,@_3,351-358$M_,@_3,%B\\As01mesant\Procite Databases\WCS\Articles/Landgren G 1984 07.pdfB$M_,@_3,+1342$M_,@_3,29270j.=@-/Geels, R. S. //Corzine, S. W. //Coldren, L. A. /=Hu9̬5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5=Hu9;[?~r(Ludeke, R. //Chiang, T. C. //Miller, T. (HFIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801HF-Schottky-Barrier Formation of Ag on GaAs(110)-HF02.2HF (Journal of Vacuum Science & Technology B(HF ArticleHF & July 1983 HF &1HF &3HF &581-587HF &%;\\Aeron\Procite Databases\WCS\Articles/Ludeke R 1983 Databases\WCS\Articles/Ludeke R 1983 *ZN~X4)l1983 07.pdf@HF &+123HF &29310;@rLuryi, S. //Suhir, E. /=oP$At&T Bell Labs/Murray Hill//Nj/07974$/=oPQNew Approach to the High-Quality Epitaxial-Growth of Lattice-Mismatched MaterialsQ/=oP07.4.10Z=oP0Z=oP Applied Physics Letters/=oP Article$M_ @_PE 1986 Jul 21 $M_ @_PE49$M_ @_PE3$M_ @_PE140-142$M_ @_PE%?\\As01mesant\Procite Databases\WCS\Articles\Luryi S 1986 07.pdf?$M_ @_PE+115,$M_ @_PE29340;@r Lyon, S. A.  :=pt1@2Princeton Univ,Dept Elect Engn/Princeton//Nj/085442:=pt1@.Spectroscopy of Hot Carriers in Semiconductors.:=pt1@05.1.2:=pt1@ Journal of Luminescence:=pt1@ Review9@_'9)9@_)9N2919869@_'9)9@_)9N29359@_'9)9@_)9N2939@_'9)9@_)9N29121-1549@_'9)9@_)9N2;[?rMacdonald, A. H. @=(u:,Indiana Univ,Dept Phys/Bloomington//in/47405,@=(u:8Edge States in the Fractional-Qua@=(u:,Indiana Univ,Dept Phys/Bloomington//in/47405,@=(u:8Edge States in the Fractional-Qua6f"R)4;@r1Macdonald, A. H. //Rice, T. M. //Brinkman, W. F. 1P=puԫNatl Res Council Canada/Ottawa K1a 0r6/Ontario/Canada ; Eth Honggerberg/Ch-8093 Zurich//Switzerland ; Bell Tel Labs Inc/Murray Hill//Nj/07974P=puԫIHall Voltage and Current Distributions in an Ideal Two-Dimensional SystemIP=puԫ02.5.2P=puԫ "Physical Review B-Condensed Matter"P=puԫ Article$M_̻@_̲ 1983 Sep 15=puԫ=puԫ28$M_̻@_̲6$M_̻@_̲ 3648-3650 $M_̻@_̲%D\\As01mesant\Procite Databases\WCS\Articles\Macdonald AH 1983 09.pdf,@/hH9XXF =puԫ=pu>ԫ+112$M_̻@_̲29370nic Energy-Levels in 2 Dimensions at Arbitrary Magnetic-FieldsEh=o03.1.1h=oh=o "Physicalnic Energy-Levels in 2 Dimensions at Arbitrary Magnetic-FieldsEh=o03.1.1h=oh=o "Physical 8336-8344 m$M_|vlx@_dxG|m%?\\Aeron\Procite Databases\WCS\Articles\Macdonald AH 1986 06.pdf?m$M_|vlKx@_dxG|m+126m$M_|vlx@_dxG|m29380;[?rMacdonald, A. H. //Streda, P. =LuhiԫNatl Res Council Canada,Div Phys/Ottawa K1a ; Eth Honggerberg,Inst Theoret Phys/Ch-8046 ; Czechoslovakian4dN~,<;@r"Macdonald, A. H. //Ritchie, D. S. "h=o5Natl Res Council Canada/Ottawa K1a 0r6/Ontario/Canada5h=oEHydrogenic Energy-Levels in 2 Dimensions at Arbitrary Magnetic-FieldsEh=o03.1.1h=oh=o "Physical Review B-Condensed Matter"h=o Articlem$M_|vlx@_dxG|m 1986 Jun 15 m$M_|vlx@_dxG|m33m$M_|vlx@_dxG|m12m$M_|vlx@_dxG|m 8336-8344 m$M_|vlx@_dxG|m%D\\As01mesant\Procite Databases\WCS\Articles\Macdonald AH 1986 06.pdfDm$M_P|vlx@_dxG|m+126m$M_|vlx@_dxG|m29380;@rMacdonald, A. H. //Streda, P. =LuhiԫNatl Res Council Canada,Div Phys/Ottawa K1a ; Eth Honggerberg,Inst Theoret Phys/Ch-8046 ; Czechoslovakian Acad Sci,Inst Phys/Cs-18040=Luhiԫ'Quantized Hall-Effect and Edge Currents'=Luhiԫ02.5.3=Luhiԫ "Physical Review B-Condensed Matter"=Luhiԫ Article$M_@_ 1984 Feb 15=Luhiԫna/Poona 411007/Maharashtra/India=HxR<LThe Nature of Molecular-Beam Epitaxial-Growth Examined Computer-SimulationsL=HxR<06.2.3=HxR< :CRC Critical Reviews in Solid State and Materials Sciences:=HxR< Review*$M_ 34@_4 *14FvN~ 4D=Luhiԫ29$M_@_4$M_@_ 1616-1619 $M_@_%D\\As01mesant\Procite Databases\WCS\Articles\Macdonald AH 1984 02.pdf,@/hH9XXF =Luhiԫ=Luhiԫ+148$M_@_29390;@sMadhukar, A. //Ghaisas, S. V. =HxR<Univ So Calif,Dept Mat Sci/Los Angeles//Ca/90089 ; Univ So Calif,Dept Phys/Los Angeles//Ca/90089 ; Univ Poona/Poona 411007/Maharashtra/India=HxR<LThe Nature of Molecular-Beam Epitaxial-Growth Examined Computer-SimulationsL=HxR<06.2.3=HxR< :CRC Critical Reviews in Solid State and Materials Sciences:=HxR< Review*$M_ 34@_4 *14*$M_ 34@_4 *1*$M_ 34@_4 *%:\\As01mesant\Procite Databases\WCS\Articles\Madhukar A.pdf:*$M_ 34@_4 *)pp116-117 missingX'=HxR<X'=HxR<X'=HxR<X'=HxR< X'=HxR<+1192*$M_ 34@_4 *29440h&=Hu:̬@Low Threshold Planarized Vertical-Cavity Surface-Emitting Lasers@h&=Hu:̬11.2.1h&=Hu:̬ !IEEE Phoh&=Hu:̬@Low Threshold Planarized Vertical-Cavity Surface-Emitting Lasers@h&=Hu:̬11.2.1h&=Hu:̬ !IEEE Pho11660$M_lܞ@_Ԟ:ԕ11660)Y i<Tj.=@-MGeels, R. S. //Corzine, S. W. //Scott, J. W. //Young, D. B. //Coldren, L. A. Mh&=Hu:̬5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5h&=Hu:̬@Low Threshold Planarized Vertical-Cavity Surface-Emitting Lasers@h&=Hu:̬11.2.1h&=Hu:̬ !IEEE Photonics Technology Letters!h&=Hu:̬ Article$M_lܞ@_Ԟ:ԕ1990 Apr$M_lܞ@_Ԟ:ԕ2$M_lܞ@_:ԕ4$M_lܞ@_Ԟ:ԕ234-236$M_lܞ@_Ԟ:ԕ%@\\As01mesant\Procite Databases\WCS\Articles\Geels RS 1990 04.pdf@x=HuD:̬+126$M_lܞ@_Ԟ:ԕ11660j.=@-?Goldman, V. J. //Santos, M. //Shayegan, M. //Cunningham, J. E. ? =w"Suny Stony Brook,Dept Phys/Stony Brook//Ny/11794 ; Princeton Univ,Dept Elect Engn/Princeton//Nj/08544 ; at&T Bell Labs/Holmdel//Nj/07733 =w"1Evidence for 2-Dimensional Quantum Wigner Crystal1 =w"02.6.3 =w" Physical Review Letters =w" ArticleI$M_LM@_M:DI 1990 Oct 22 =w"65I$M_LM@_M:DI17I$M_LM@_M:DI 2189-2192 I$M_LM@_M:DI%B\\As01mesant\Procite Databases\WCS\Articles\Goldman VJ 1990 10.pdf,hhH9XXF=w"+175I$M_LM@_M:DI11700 Solid State Phys Lab,Delhi 110054,India :jN~;4\;@@`BZheng, JF//Liu, X//Newman, N//Weber, ER//Ogletree, DF//Salmeron, M h=sXh=sXh=sXh=sXh=sXh=sXh=sXh=sXh=sXh=sXh=sXh=sXh=sXBScanning Tunneling Microscopy Studies of Si Donors (Si-Ga) in GaAsh=sXAh=sX06.2=sX Physical Review Lette;[?s+Streda, P. //Kucera, J. //Macdonald, A. H. +8/=XpԫdCzechoslovakian Acad Sci,Inst Phys/Cs-18040 ; Natl Res Council Canada/Ottawa K1a 0r6/Ontario/ԫ+189$M_@_D29600M}N~~4tM_\-L/@_D/2 \$*We report scanning tunneling microscopy (STM) studies of Si substitutional donors (Si(Ga)) in GaAs that reveal delocalized and localized electronic features corresponding to Si(Ga) in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in size, superimposed on the background lattice. These features are attributed  to enhanced tunneling due to the local perturbation of the band bending by the Coulomb potential of subsurface Si(Ga). In contrast, STM images of surface Si(Ga) show very localized electronic structur es, in good agreement with a recent theoretical prediction [J. Wang et al. Phys. Rev. B 47, 10 329 (1993)].$$M_\-L/@_D/2 \$+117$$M_\-L/@_D/2 \$,GAAS N(110) SURFACE/ SPECTROSCOPY$$M_\-L/@_D/2 \$65120;@s+Streda, P. //Kucera, J. //Macdonald, A. H. +8/=XpԫdCzechoslovakian Acad Sci,Inst Phys/Cs-18040 ; Natl Res Council Canada/Ottawa K1a 0r6/Ontario/20375 ; Caltech,Dept Chem Engn/Pasadena//Ca/91125{C=@uBNSurface Bond Angle and Bond Lengths of Rearranged As and Ga Atoms on GaAs(110)2C=@uBC=@uBC=@uB06.2.2C=@uB "Physical Review B-Condensed Matter"C=@uB Article$M_ D@_<J 1978 Apr 15 $M_ D@_<J17$M_ D@_<J8$M_ D@_<J 3303-3309 $M_ D@_<J%:\\Aeron\Procite Databases\WCS\Articles\Tong SY 1978 04.pdf:$M_ D@_<J+155$M_ D@_<J29620DtN~tJ29620;@sAAlphenaar, B. W. //Mceuen, P. L. //Wheeler, R. G. //Sacks, R. N. A?=8tNKYale Univ/New Haven//Ct/06520 ; United Technol Res Ctr/E Hartford//Ct/06108K?=8tNRSelective Equilibration Among the Current-Carrying States the Quantum Hall RegimeR?=8tN02.5.3`=8tN`=8tN Physical Review Letters?=8tN Article$M_@_0 1990 Feb 5 $M_@_064$M_@_06$M_@_0677-680$M_@_0%D\\As01mesant\Procite Databases\WCS\Articles\Alphenaar BW 1990 02.pdf,$M_@_0$M_@_0+154$M_@_029660~S\Articles/Miller DAB 1982.pdf:$M_@_G+283$M_@_G9820681$M_@_G%:\\Aeron\Procite Databases\WC~S\Articles/Miller DAB 1982.pdf:$M_@_G+283$M_@_G9820681$M_@_G%:\\Aeron\Procite Databases\WC~S\Articles/Miller DAB 1982.pdf:$M_@_G+283$M_@_G9820681$M_@_G%:\\Aeron\Procite Databases\WC~S\Articles/Miller DAB 1982.pdf:$M_@_G+283$M_@_G9820681$M_@_G%:\\Aeron\Procite Databases\WC~S\Articles/Miller DAB 1982.pdf:$M_@_G+283$M_@_G9820ronAqj*IT*w;@\&cMiller, D. A. B. //Chemla, D. S. //Eilenberger, D. J. //Smith, P. W. //Gossard, A. C.//Tsang, W. T.c8F=(ErBMBell Tel Labs Inc/Holmdel//Nj/07733 ; Bell Tel Labs Inc/Murray Hill//Nj/07974M8F=(ErB`Large Room-Temperature Optical Nonlinearity in GaAs/Ga1-X Alxas Multiple Quantum Well Structures`8F=(ErB03.3.48F=(ErB Applied Physics Letters8F=(ErB Article$M_@_G1982$M_@_G41$M_@_G8$M_@_G679-681$M_@_G%?\\As01mesant\Procite Databases\WCS\Articles/Miller DAB 1982.pdf?$M_@_G+283$M_@_G9820;@ttFoxman, E. B. //Mceuen, P. L. //Meirav, U. //Wingreen, N. S. //Meir, Y. //Belk, N. R.//Kastner, M. A. //Wind, S. J. td= r d[Mit,Dept Phys/Cambriderg,Inst Tech Phys/W-8520g8=PtCElectrical Transport in Narrow-Miniband Semiconductor SuperlatticesC8=Pt04.3.18=Pt "Physical Review B-Condensed Matter"8=Pt Article$M_T6@_T 1991 May 15 $M_T6@_T43$M_T6@_T14$M_T6@_T 12094-12097 $M_T6@_T%;\\Aeron\Procite Databases\WCS\Articles\Grahn HT 1991 05.pdf'$M_T6@_T$M_T6@_T*gMiniband transport in GaAs/AlAs superlattices with narrow band widths is investigated by electrical time-oIyN~2T*4j.=@Z2;Grahn, H. T. //Vonklitzing, K. //Ploog, K. //Dohler, G. H. ;8=PtgMax Planck Inst Festkorperforsch,Heisenbergstr 1/W-7000 ; Univ Erlangen Nurnberg,Inst Tech Phys/W-8520g8=PtCElectrical Transport in Narrow-Miniband Semiconductor SuperlatticesC8=Pt04.3.18=Pt "Physical Review B-Condensed Matter"8=Pt Article$M_T6@_T 1991 May 15 $M_T6@_T43$M_T6@_T14$M_T6@_T 12094-12097 $M_T6@_T%@\\As01mesant\Procite Databases\WCS\Articles\Grahn HT 1991 05.pdf,$M_T6@_T$M_T6@_T*gMiniband transport in GaAs/AlAs superlattices with narrow band widths is investigated by electrical time-of-flight experiments as a function of temperature. Negative differential velocity is observed in all cases. The low-field drift mobility is inversely proportional to the temperature above 40 K, indicating miniband transport in the nondegenerate case with a temperature-independent scattering time. Below 40 K, the temperature dependence shows the signature of hopping transport. The occurrence o;h1?luKunc, K. //Martin, R. M. po=evUniv Paris 6,Cnrs,Phys Solides Lab/F-75230 Paris 05//France ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/94304 ; Univ Paris 6,Dept Rech Phys/F-75230 Paris 05//Francepo=eveAb Initio Force Constants of GaAs: a New Approach to Calculation of Phonons and Dielectric Propertiesses\WCS\Articles\Kunc K 1982 02.pdf9@_,@_l,+111@_,@_l,30060^N~4@_,@_l,%>\\As01mesant\Procite Databases\WCS\Articles\Kunc K 1982 02.pdf>@_,@_l,+111@_,@_l,30060<@X#Milton, A. Fenner//Hess, Michael R.#0Series-parallel scan, IR, CID, focal-plane array012.3.4597270 US4054797 US 10/18/1977  US4054797 1US3806729 US3808435 US3842274 US3883437 US39020661"+US4259576 US4310761 US4609823 US4633086 US5113263 US5126568 US4360732 US4377747 US4652766 US4703179 US5056503 US5061865 US4409483 US4423325 US4724326 US4728804 US5309230 US5315114 US4443701 US4596930 US5455602 US5510588 US4771175 US4939369 US4191967 US4234789 US4737642 US4767937 US5828408 USRE33287+%;\\As01mesant\Procite Databases\WCS\Patents\US04054797__$.pdf;' G01T 1/24 +30600p<@Chung, B. C. //Gershenzon, M. =eo&/mVarian Res Ctr,Device Lab/Palo Alto//Ca/94303 ; Univ So Calif,Dept Mat Sci & Elect Engn/Los Angeles//Ca/90089m=eo&/zThe Influence of Oxygen on the Electrical and Optical-Properties of GaN Crystals Grown by Metalorganic Vapor-Phase Epitaxyz=eo&/.01.4.2 "Shallow" Extended-Wave-Function Levels.=eo&/ Journal of Applied Physics=eo&/ Article$M_LP@_DP% Jul 15, 1992 $M_LP@_DP% 72$M_LP@_DP%2$M_LP@_DP%651-659$M_LP@_Dp\\As01mesant\Procite Databases\WCS\Articles/Powell 1992 07.pdf>8=eo&/*IOxygen was observed to influence the electrical and optical properties of GaN layers grown by metalorganic vapor phase epitaxy. The carrier concentrations obtained from Van der Pauw-Hall measurements increased an order of magnitude when oxygen was incorporated into the grown layers. Additionally, the presence of oxygen in the GaN layers also changed the compensation behavior of Zn. Anomalous behavior of optical transitions in the oxygen-doped GaN layers was observed by optical absorption spectroscopy and low-temperature (4.2 K) photoluminescence measurements. These properties were studied as a function of growth parameters including growth temperature, amount of doping, etc. A model based on impurity band formation is proposed to explain these experimental results, and it is concluded that oxygen is a "shallow" deep donor in GaN.I$M_LP@_DP% +126$M_LP@_DP%,h1?j01.5.1 Point Defect Centers!Redfield, David//Bube, Richard H.!&Photoinduced Defects in Semiconductors& Cambridge Cambridge University Press1996%None65130;u=?RvMartins, J. L. //Zunger, A. =q:Ȫ&Solar Energy Res Inst/Golden//Co/80401&=q:Ȫ\*ddition spectrum of a small electron gas in the quantum Hall regime in ways that cannot be described by a classical charging energy. The interaction energy between electrons is observed to depend upon Landau-level index, and the evolution of the addition spectrum with magnetic field is found to depend strongly on Coulomb interactions. A self-consistent model of the island is introduced that can account for these results.$M_:;@_;|+180$M_:;@_;|,Magnetic-Field/ Electron$M_:;@_;|30390;@v|Mceuen, P. L. //Szafer, A. //Richter, C. A. //Alphenaar, B. W. //Jain, J. K. //Stone, A. D. //Wheeler, R. G. //Sacks, R. N. |(=ЅyeԫZYale Univ,Dept Appl Phys/New Haven//Ct/06520 ; United Technol Res Ctr/E Hartford//Ct/06108Z(=Ѕyeԫ9New Resistivity for High-Mobility Quantum Hall Conductors9(=Ѕyeԫ02.5.2(=Ѕyeԫ Physical Review Letters(=Ѕyeԫ Article$M_l@@_p` 1990 Apr 23 =Ѕyeԫ =Ѕyeԫ64$M_l@@_p`17$M_l@@_p` 2062-2065 $M_l@;1?v/Mckinnon, A. E. //Szabo, A. G. //Miller, D. R. /$=DpT/Natl Res Council Canada,Div Biol Sci/Ottawa K1a/$=DpT'Deconvolution of Photoluminescence Data'$=DpT05.1.2$=DpT Journal of Physical Chemistry$=DpTRBr4enomena in Fabry-Perot Non-Linear Optic Media Devices:P=aurR`P=aurR`P=aurR`10.4.1P=aurR`P=aurR` Applied Physics LettersP=aurR` Article$M_$@_ $$1978$M_$@_ $$32$M_$@_ $$5$M_$@_ $$284-286$M_$@_ $$%>\\As01mesant\Procite Databases\WCS\Artixcles/McCall SL 1977.pdf>$M_$@_ $$+131$M_$@_ $$30360j.=@2mHeying, B. //Wu, X. H. //Keller, S. //Li, Y. //Kapolnek, D. //Keller, B. P. //Denbaars, S. P. //Speck, J. S. mh0=vO̬Univ Calif Santa Barbara,Coll Engn,Dept Mat,Santa ; Univ Calif Santa Barbara,Coll Engn,Dept Elect & Comp ; Univ Calif Santa Barbara,Coll Engn,Mat Res Lab,Santah0=vO̬cRole of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Filmsch0=vO̬07.5.3h0=vO̬ Applied Physics Lettersh0=vO̬ Article$M_4$@_O4 Jan 29, 1996 $M_4$@_O468$M_4$@_O45$M;1?vjMceuen, P. L. //Foxman, E. B. //Kinaret, J. //Meirav, U. //Kastner, M. A. //Wingreen, N. S. //Wind, S. J. j`|=0tlNec Corp Ltd,Res Inst/Princeton//Nj/08540 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Dept Phys/Cambridge//Ma/02139`|=0tlMSelf-Consistent Addition Spectrum of a Coulomb Island>n~_4$@_O4643-645$M_4$@_O4%@\\As01mesant\Procite Databases\WCS\Articles\Heying B 1996 01.pdf@=vO̬*8In this letter we demonstrate that the anomalously low (002) x-ray rocking curve widths for epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading dislocation (TD) geometry. Epitaxial GaN films were grown on c-plane sapphire by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal flow reactor. Films were grown with (002) rocking curves (omega-scans) widths as low as 40 arcsec and threading dislocation densities of similar to 2 x 10(10) cm(-2). The threading dislocations in this film lie parallel to the [001] direction and within the limit of imaging statistics, all are pure edge with Burgers vectors parallel to the film/substrate interface. These TDs will not distort the (002) planes. However, distortion of asymmetric planes, such as (102), is predicted and confirmed in (102) rocking curve widths of 740 arcsec. These results are compared with films with (002) rocking curves of similar to 270 arcsec and threading dislocation densities of si milar to 7 X 10(8) cm(-2). (C) 1996 American Institute of Physics.8$M_4$@_O4+138$M_4$@_O4,Crystal/ Diodes/ Inp$M_4$ @_O412950//Nj/08540 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Dept Phys/Cambridge//Ma/02139`|=0tlMSelf-Consistent Addition Spectrum of a Coulomb Island//Nj/08540 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Dept Phys/Cambridge//Ma/02139`|=0tlMSelf-Consistent Addition Spectrum of a Coulomb IslandN~;@vjMceuen, P. L. //Foxman, E. B. //Kinaret, J. //Meirav, U. //Kastner, M. A. //Wingreen, N. S. //Wind, S. J. j`|=0tlNec Corp Ltd,Res Inst/Princeton//Nj/08540 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Dept Phys/Cambridge//Ma/02139`|=0tlMSelf-Consistent Addition Spectrum of a Coulomb Island in Quantum Hall RegimeM`|=0tl04.4.2`|=0tl "Physical Review B-Condensed Matter"`|=0tl Article$M_:;@_;| 1992 May 15 $M_:;@_;|45$M_:;@_;|19$M_:;@_;| 11419-11422 $M_:;@_;|%A\\As01mesant\Procite Databases\WCS\Articles\Mceuen PL 1992 05.pdfA$M_:;@_;|*Coulomb interactions are shown to influence the a;[?v|Mceuen, P. L. //Szafer, A. //Richter, C. A. //Alphenaar, B. W. //Jain, J. K. //Stone, A. D. //Wheeler, R. G. //Sacks, R. N. |(=ЅyeԫZYale Univ,Dept Appl Phys/New Haven//Ct/06520 ; United Technol Res Ctr/E Hartford//Ct/06108Z(=Ѕyeԫ9New Resistivity for High-Mobility Quantum Hall Conductors9(=Ѕyeԫ02.5.2(=Ѕyeԫ Physical Review Letters(=Ѕyeԫ Article$M_l@@_p` 1990 Apr 23 =Ѕyeԫ =Ѕyeԫ64$M_l@@_p`17$M_l@@_p` 2062-2065 $M_l@f Physical Chemistry$=DpT^N~:4urnal of Applied Physics Part 2-Letters2=v&X Articlen$M_wy@_yn1986n$M_wy@_yn25=v&X12=v&X L945-L948 xI=v&X%=\\As01mesant\Procite Databases\WCS\Articles\Mizuta M 1986.pdf=n$M_Owy@_yn+179n$M_wy@_yn30510Rc>@t Haynes, J.R. K=pt\<JExperimental Proof of the Existence of a New Electronic Complex in SiliconJ K=pt\<01.4.4 ExcitonsK=pt\< Physical Review LettersK=pt\<1960 02$M_@_|v4$M_@_|v7$M_@_|v361-363(<=pt\<(<=pt\<%@\\As01mesant\Procite Databases\WCS\Articles\Hayes TR 1960 902.pdf@$M_@_|v65140iew Letters=Hy"ԫ Article$M_@_v, 1989 Oct 90(=Hy"ԫ0(=Hy"ԫ63iew Letters=Hy"ԫ Article$M_@_v, 1989 Oct 90(=Hy"ԫ0(=Hy"ԫ63iew Letters=Hy"ԫ Article$M_@_v, 1989 Oct 90(=Hy"ԫ0(=Hy"ԫ63&Vuj.=@3\Pinczuk, A. //Schmittrink, S. //Danan, G. //Valladares, J. P. //Pfeiffer, L. N.//West, K. W.\=Hy"ԫ$At&T Bell Labs/Murray Hill//Nj/07974$=Hy"ԫ>Large Exchange Interactions in the Electron-Gas of GaAs Wells>=Hy"ԫ02.4.2=Hy"ԫ Physical Review Letters=Hy"ԫ Article$M_@_v, 1989 Oct 90(=Hy"ԫ0(=Hy"ԫ63$M_@_v,15$M_@_v, 1633-1636 $M_@_v,%A\\As01mesant\Procite Databases\WCS\Articles\Pinczuk A 1989 10.pdf,@/hH9XLXFL0(=Hy"ԫ0(=Hy"ԫ+126$M_@_v,13190@_j1,3-6$M_,@_j1,61-204$M_,@_j1,375$M_,@_j1,%8\\Aeron\Procite Databases\WCS\Articles\Ku@_j1,3-6$M_,@_j1,61-204$M_,@_j1,375$M_,@_j1,%8\\Aeron\Procite Databases\WCS\Articles\Ku@_j1,3-6$M_,@_j1,61-204$M_,@_j1,375$M_,@_j1,%8\\Aeron\Procite Databases\WCS\Articles\Ku@_j1,3-6$M_,@_j1,61-204$M_,@_j1,375$M_,@_j1,%8\\Aeron\Procite Databases\WCS\Articles\Kuhese structures are discucite Databases\WCS\Articles\Ku|EuN~4M<@:Kubby, J. A.//Boland, J. J.c=`CrXerox Corp,Wilson Ctr Res & Technol,800 Phillips Rd,M-S W-114-41d,Webster,Ny 14580 ; Univ N Carolina,Dept Chem,Chapel Hill,Nc 27599c=`Cr7Scanning Tunneling Microscopy of Semiconductor Surfaces7c=`Cr06.1.2|=`Cr Surface Science Reportsc=`Cr Review$M_,@_j1,1996$M_,@_j1,26$M_,@_j1,3-6$M_,@_j1,61-204$M_,@_j1,375$M_,@_j1,%=\\As01mesant\Procite Databases\WCS\Articles\Kubby JA 1996.pdf=$M_,@_j1,*[This review describes advances in understanding the structural, electronic, and chemical properties of clean low-index semiconductor surfaces during the first decade following the advent of the scanning tunneling microscope (STM). The principles of STM are discussed together with the instrumentation required to perform STM measuremen=tq 01=tq  US4058430 1=tq US1=tq  11/15/1977 1=tq  US4058430 1=tq EUS3489621 US3493430 US3556837 US3576670 US3839084 US3862859 US4000716E1=tq KCurzon et al., J. Phys. D. Appl. Phys. vol. 5, No. 5 (1972), pp. 1046-1048.K1=tq "US4261771 US4289797 US4523051 US4572873 US4767494 US4806321 US4849249 US4859625 US4951603 US4960720 630849249 US4859625 US4951603 US4960720 n^N~44ys. D. Appl. Phys. vol. 5, No. 5 (1972), pp. 1046-1048.K1=tq "US4261771 US4289797 US4523051 US4572873 US4767494 US4806321 US4849249 US4859625 US4951603 US4960720 US5091335 US5094974 US5330610 US5338389 US4413022 US4486487 US5261961 US5281274 US5385651 US5439876 US5516554 US5641984 US5851849 US5855680 US6113977 US6131=tq %;\\As01mesant\Procite Databases\WCS\Patents\US04058430__.pdf;1=tq 'B05D 5/0; B05D 5/121=tq +261=tq 630M<Ԯ1?NPearton, S. J.Y=`Cr\a6Univ Florida,Dept Mat Sci & Engn/Gainesville//Fl/326116Y=`Cr\a,Reactive Ion Etching of III-V Semiconductors,Y=`Cr\a08.2.3/=`Cr\a )International Journal of Modern Physics B)Y=`Cr\a Review,@_,115$M_,@_,*Anisotropic dry etching by a number of different techniques is widely employed in III-V compound semiconductor technology for pattern transfer, device isolation, mesa formation, grating fabrication and via hole etching. In this paper we review the different dry etching techniques, the plasma chemistries employed for III-V materials and electrical and optical changes to the near-surface of the etched sample. We give examples of the use of dry etching in fabrication of heterojunction bipolar transistors, field effect transistors and various types of semiconductor lasers. Particular attention is paid to the characteristics of Electron Cyclotron Resonance discharges operating at high ion densities (greater-tities (greater-tn^3c~Z44han-or-equal-to 5 x 10(11) cm-3) and low pressure (approximately 1 mTorr) with low ion energies (less-than-or-equal-to 15 eV) which are ideally suited for dry etching of III-V semiconductors.$M_,@_,+52$M_,@_,,Electron-Cyclotron Resonance/ Molecular-Beam-Epitaxy/ Vapor-Phase Epitaxy/ Mobility Transistors/ Selective Regrowth/ Surf }ace-Chemistry/ Laser Structures/ Induced Damage/ Power Devices/ Thin-Films$M_,@_,62030;@w*Nishida, K. //Taguchi, K. //Matsumoto, Y. *p2-=v05Nippon Elect Co Ltd,Cent Res Labs/Kawasaki 211//Japan5p2-=v0GInGaAsp Heterostructure Avalanche Photo-Diodes With High Avalanche GainGp2-=v011.3.2p2-=v0 Applied Physics Lettersp2-=v0 Article$M_䌁@_܌1979$M_䌁@_܌35$M_䌁@_܌3$M_䌁@_܌251-253$M_䌁@_܌%>\\As01mesant\Procite Databases\WCS\Articles/Nishida K 1979.pdf>$M_䌁@_܌+121$M_䌁@_܌30610A1023480A1 DE2517049A1 DE2517049B2 DE2517049C3 FR2268363A1 FR2268363B1 GB1507701A JP50138776A2 US4075652iUS3833435 US3906541"!US4236166 US4252840 US4550489 US4583105 US4663643 US4712122 US435A1023480A1 DE2517049A1 DE2517049B2 DE2517049C3 FR2268363A1 FR2268363B1 GB1507701A JP50138776A2 US4075652iUS3833435 US3906541"!US4236166 US4252840 US4550489 US4583105 US4663643 US4712122 US435US4866491 USRE33584 US4429452 US4450462 US4757358 US4829347 US5116772 US5116773 US4641161 US4651179 US5011785 US5081002 US4173764 US4201998 US4460910 US4546540 US4745446 US4754ds34  Article$M_|@_t 1979 Jun 15 $M_|@_t19$M_|@_t12$M_|@_t 6341-6349 $M_|@_t%C\\As01mesant\Procite Databases\WCS\Articles\Schulman JN 1979 06.pdfC$M_|@_t+125$M_|@_t30670;@x"Tong, S. Y. //Xu, G. //Mei, W. N. "8V=qz̬eUniv Wisconsin,Dept Phys/Milwaukee//Wi/53201 ; Univ Wisconsin,Surface Studies Lab/Milwaukee//Wi/53201e8V=qz̬6Vacancy-Buckling Model for the (2x2) GaAs(111) Surface68V=qz̬06.2.28V=qz̬ Physical Review Letters8V=qz̬ Article3$M_<>@_>3 1984 May 7 X+=qz̬523$M_<>@_>3193$M_<>@_>3 1693-1696 3$M_<>@_>3%?\\As01mesant\Procite Databases\WCS\Articles\Tong SY 1984 05.pdf?X+=qz̬:+1453$M_<>@_>330740n/47907@=s\̬JContinuous-Wave, Room-Temperature, Ridge-Wave-Guide Green-Blue Diode-LaserJ@=s\̬10.3.2 Electronics Lettersn/47907@=s\̬JContinuous-Wave, Room-Temperature, Ridge-Wave-Guide Green-Blue Diode-LaserJ@=s\̬10.3.2 Electronics Lettersn/47907@=s\̬JContinuous-Wave, Room-Temperature, Ridge-Wave-Guide Green-Blue Diode-LaserJ@=s\̬10.3.2 Electronics LettersG5ekj.=@3Salokatve, A. //Jeon, H. //Ding, J. //Hovinen, M. //Nurmikko, A. V. //Grillo, H. E. //Han, J. //Fan, Y. //Ringle, M. //Gunshor, R. L. //Hua, G. C. //Otsuka, N. @=s\̬Brown Univ,Div Engn/Providence//Ri/02912 ; Brown Univ,Dept Phys/Providence//Ri/02912 ; Purdue Univ,Sch Elect Engn/W Lafayette//in/47907 ; Purdue Univ,Sch Mat Engn/W Lafayette//in/47907@=s\̬JContinuous-Wave, Room-Temperature, Ridge-Wave-Guide Green-Blue Diode-LaserJ@=s\̬10.3.2 Electronics Letters@=s\̬ Article$M_@~Neugebauer, J//VandeWalle, C.G.=gs9!Role of hydrogen in doping of GaN!=gs9)01.5.4 Hydrogen Complexes and Passivation)=gs9 Applied Physics Letters=gs9AMER INST PHYSICS$M_t"d$@_\$lt1996$M_t"d$@_\$lt68$M_t"d$@_\$lt13$M_t"d$@_\$lt 1829-1831 $M_t"d$@_\$lt%D\\As01mesant\Procite Databases\WCS\Articles\Neugebauer J 1996 03.pdfD$M_t"d$@_\$lt' 0003-6951 $M_t"d$@_\$lt)Times Cited:110 Bibliography:13 English XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 A1996UB53500029 Copyright 2003 SciSearch Plus$M_t"d$@_\$lt*IWe investigate the interactions between hydrogen and dopant impurities in GaN, using stP=wo,?<P :jN~d+41 FR2376537B1 GB1546984A JP53084744A2 JP57009713B4 US4079404^=wo,?;US3774987 US3841733 US3864018 US3976358 US3981023 US4029390;=wo,?uWeidel, Optics Communication, vol. 12, No. 1, Sept. 1974. Electronic Letters, vol. 10, No. 14, July 11, 1974, p. 280.u=wo,?"]US4358851 US4364064 US5355386 US5454055 US4389655 US4558920 US5173959 US5221984 US6313803 US4966446 US5004956 US5849204 US5949932 US6034982 US6090635 US4577926 US4699449 US6172997 US6292499 US4809358 US4845052 US5297218 US5317452 US5544184 US5544269 US5043631 US5119448 US4225213 US4297653 US4904036 US4953933 US5666446 US5737466 US4767174 US4789214]=wo,?%;\\As01mesant\Procite Databases\WCS\Patents\US04079404__.pdf;=wo,?'H01L 31/12; G02B 5/14=wo,?+35=wo,?6701989V9@__9a9@_a9(V944V9@__9a9@_a9(V94-6V9@__9a9@_a9(V9285-314V9@__9a9@_a9(V9%:\\Aeron\Pro1989V9@__9a9@_a9(V944V9@__9a9@_a9(V94-6V9@__9a9@_a9(V9285-314V9@__9a9@_a9(V9%:\\Aeron\Pro1989V9@__9a9@_a9(V944V9@__9a9@_a9(V94-6V9@__9a9@_a9(V9285-314V9@__9a9@_a9(V9%:\\Aeron\ProvN~94Do interacting electrons in this potential is calculated in the effective-mass approximation as a function of the dot size and the strength of a magnetic field directed perpendicularly to the dot plane.m$M_t@_l?+177$M_t@_l?,States$M_t@_l?31630;@{-Miller, A. //Miller, D. A. B. //Smith, S. D. -`c=(4o(uN Texas State Univ/Denton//Tx/76203 ; Bell Tel Labs Inc/Holmdel//Nj/07733 ; Univ Arizona,Ctr Opt Sci/Tucson//Az/85721u`c=(4o(6Dynamic Non-Linear Optical Processes in Semiconductors6`c=(4o(05.1.4`c=(4o( Advances in Physics`c=(4o( Review$M_@_J1981$M_@_J30$M_@_J6$M_@_J697-800$M_@_J%=\\As01mesant\Procite Databases\WCS\Articles/Miller A 1981.pdf=`c=(4o-Optic Effect Devices.(F=TrHe11.4.2(F=TrHe Optical and Quantum Electronics(F=TrHe Article$M_|l@_d|1990$M_|l@_d|22$M_|l@_d|Si$M_|l@_d|S61-S98$M_|l@_d|%:\\Aeron\Procite Databases\WCS\Articles/Miller DAB 1990.pdf:=TrHe+137$M_|l@_d|31720;=?{Miller, D. A. B. =Yp9(Heriot Watt Univ,Dept Phys/Edinburgh Eh1(=Yp9fRefractive Fabry-Perot Bistability WiYIy <TE(+156$M_@_J31690;@{Miller, D. A. B. (F=TrHe4At&T Bell Labs,Crawfords Corner Rd/Holmdel//Nj/077334(F=TrHe.Quantum-Well Self-Electro-Optic Effect Devices.(F=TrHe11.4.2(F=TrHe Optical and Quantum Electronics(F=TrHe Article$M_|l@_d|1990$M_|l@_d|22$M_|l@_d|Si$M_|l@_d|S61-S98$M_|l@_d|%?\\As01mesant\Procite Databases\WCS\Articles/Miller DAB 1990.pdf?=TrHe+137$M_|l@_d|31720;@{Miller, D. A. B. =Yp9(Heriot Watt Univ,Dept Phys/Edinburgh Eh1(=Yp9fRefractive Fabry-Perot Bistability With Linear Absorption: Theory of Operation and Cavity Optimizationf=Yp911.4.2=Yp9=Yp9 #IEEE Journal of Quantum Electronics#=Yp9 Article$M_\L@_D\1981$M_\L@_D\17$M_\L@_D\3$M_\L@_D\306-311$M_\L@_D\%?\\As01mesant\Procite Databases\WCS\Articles/Miller DAB 1981.pdf?$M_\L@E_D\+130$M_\L@_D\31730;1?P}.Milliken, F. P. //Umbach, C. P. //Webb, R. A. .m=tJqIbm Corp,Div Res,Thomas J Watson Res Ctr,Pob 218,Yorktown ; Univ Maryland,Dept Phys,Ctr Su+[+[T\ectron-Electron Interactions/ Tunneling/ Electron-Gas/ Gas/ Model/ Conductance/ Fluids/ States/ Layers$M_\L@_DJ\32080;@}+Pons, D. //Mooney, P. M. //Bourgoin, J. C. +h[=`vuLabs Electr & Phys Appl/F-94450 Limeil Brevannes//France ; Univ Paris 7,Ecole Norm Super,Phys Solides Lab,Cnrs Lab/F-uh[=`vHEnergy-Dependence of Deep Level Introduction in Electron-Irradiated GaAsHh[=`v07.1.5h[=`v Journal of Applied Physicsh[=`v Article$M_d@_1L1980$M_d@_1L51$M_d@_1L4$M_d@_1L 2038-2042 $M_d@_1L%>\\As01mesant\Procite Databases\WCS\Articles/Pons D 1980 04.pdf`>$M_d@_1L+133$M_d@_1L32200@r̬ Physical Review LettersX=@r̬ Article$M_:;@_;  1990 Jan 1 $M_:;@_; 64@r̬ Physical Review LettersX=@r̬ Article$M_:;@_;  1990 Jan 1 $M_:;@_; 64@r̬ Physical Review LettersX=@r̬ Article$M_:;@_;  1990 Jan 1 $M_:;@_; 64@_; 32290;h1?r~-Theis, T. N. //Mooney, P. M. //Wright, S. L. -)=s7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987)=s'WO2DL;@P}.Milliken, F. P. //Umbach, C. P. //Webb, R. A. .m=tJqIbm Corp,Div Res,Thomas J Watson Res Ctr,Pob 218,Yorktown ; Univ Maryland,Dept Phys,Ctr Superconduct Res,Collegeqm=tJGIndications of a Luttinger Liquid in the Fractional Quantum Hall RegimeGm=tJ04.4.3=tJ Solid State Communicationsm=tJ Article$M_\L@_DJ\Jan 1996$M_\L@_DJ\97$M_\L@_DJ\4$M_\L@_DJ\309-313$M_\L@_DJ\%C\\As01mesant\Procite Databases\WCS\Articles\Milliken FP 1996 01.pdf,$M_\L@_DJ\$M_\L@_DJ\*uWe have studied the transmission through a point contact in a gated GaAs-AlGaAs heterostructure. At the nu = 1/3 quantum Hall plateau measurements of the tunneling conductance exhibit non-Fermi liquid like resonance properties. The temperature dependence of the off-resonance conductances and resonance line shapes agrees with recent predictions of Luttinger liquid theory.u$M_\L@_DJ\+109$M_\L@_DJ\,Heterojunctions/ Fractional Quantum Hall Effect/ ElSolides Lab,Cnrs Lab/F-uh[=`vHEnergy-Dependence of Deep Level Introduction in Electron-Irradiated GaAsHh[=`v07.1.5h[=`v Journal of Applied Physicsh[=`v Article$M_d@_1L1980$M_d@_1L51$M_:;@_;  1990 Jan 1 $M_:;@_; 64^N~!L4;@"~5Sibille, A. //Palmier, J. F. //Wang, H. //Mollot, F. 5X=@r̬VCtr Natl Etud Telecommun,Lab Bagneux,196 Ave Henri ; Cnrs,L2m/F-92220 Bagneux//FranceVX=@r̬RObservation of Esaki-Tsu Negative Differential Velocity in GaAs/AlAs SuperlatticesRX=@r̬04.3.1/=@r̬ Physical Review LettersX=@r̬ Article$M_:;@_;  1990 Jan 1 $M_:;@_; 64$M_:;@_; 1$M_:;@_; 52-55$M_:;@_; %A\\As01mesant\Procite Databases\WCS\Articles\Sibille A 1990 01.pdf,}$M_:;@_; $M_:;@_; +180$M_:;@_; 32290)=s Physical Review Letters)=s Article$M_ @_ 1988 January 25$M_ @_ )=s Physical Review Letters)=s Article$M_ @_ 1988 January 25$M_ @_ )=s Physical Review Letters)=s Article$M_ @_ 1988 January 25$M_ @_  ; Acad Sci Ussr,Inst Semicond Phys/Novosibirsk//UssrD=pu"q6Spin-Singlet-Spin-Triplet Oscillations in Quantum Dots6D=pu"q03.5.2==pu"q "Physical Review B-Condensed Matter"D=pu"q Article$M_d@_Nd 1992 Jan 15 CsN~ 4l;@~(Wagner, M. //Merkt, U. //Chaplik, A. V. (D=pu"qHitachi Europe Ltd,Hitachi Cambridge Lab/Cambridge Cb3 ; Univ Hamburg,Inst Angew Phys/W-2000 Hamburg 36//Germany ; Acad Sci Ussr,Inst Semicond Phys/Novosibirsk//UssrD=pu"q6Spin-Singlet-Spin-Triplet Oscillations in Quantum Dots6D=pu"q03.5.2==pu"q "Physical Review B-Condensed Matter"D=pu"q Article$M_d@_Nd 1992 Jan 15 $M_d@_Nd45$M_d@_Nd4$M_d@_Nd 1951-1954 $M_d@_Nd%@\\As01mesant\Procite Databases\WCS\Articles\Wagner M 1992 01.pdf@$M_d@_Nd*=Two interacting electrons confined to a disk on a semiconductor surface are considered in a perpendicular magnetic field. As it is appropriate for experimental realizations, we use a two-dimensional harmonic-oscillator well to confine the electrons in the plane of the disk. We predict oscillations between spin-singlet and spin-triplet ground states as a function of the magnetic field strength. Phase diagrams describing this peculiar manifestation of the electron-electron interaction in a quantum dot are calculated for GaAs and experiments to verify them are proposed.=$M_d@_Nd+153$M_d@_Nd,:Dimensional Electron-Systems/ Magnetic-Field/ Sta<tes/ Insb:$M_d@_Nd32390;y1?~(Wang, W. I. //Mendez, E. E. //Stern, F. (7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987cHigh Mobility Hole Gas and Valence-Band Offset in Modulation-Doped Para-AlGN~dt;@~(Wang, W. I. //Mendez, E. E. //Stern, F. (7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987cHigh Mobility Hole Gas and Valence-Band Offset in Modulation-Doped Para-AlGaAs/GaAs Heterojunctionsc02.1.3 Applied Physics Letters Article1984456639-641%?\\As01mesant\Procite Databases\WCS\Articles/Wang WI 1984 09.pdf?+13432410;@~1Aiki, K. //Nakamura, M. //Kuroda, T. //Umeda, J. 1@+-=r0)Hitachi Ltd,Cent Res Lab/Tokyo 185//Japan)@+-=r0>Channeled-Substrate Planar Structure (Alga)As Injection Lasers>@+-=r010.3.2@+-=r0 Applied Physics Letters@+-=r0 Article6$M_d?TA@_LAd619776$M_d?TA@_LAd6306$M_d?TA@_LAd6126$M_d?TA@_LAd6649-6516$M_d?TA@_LAd6%;\\As01mesant\Procite Databases\WCS\Articles/Aiki K 1977.pdf;6$M_d?TA@_LAd6+1226$M_d?TA@_LAd6 32470/=n` Physical Review Letters=n` Article$M_@_$ 1986 Nov 24 $M_@_$57/=n` Physical Review Letters=n` Article$M_@_$ 1986 Nov 24 $M_@_$57/=n` Physical Review Letters=n` Article$M_@_$ 1986 Nov 24 $M_@_$57e.pdf@$M_@_$+239$M_@_$10270mL|ld*x;@( Schmittrink, S. //Chemla, D. S.  =n`GAt&T Bell Labs/Murray Hill//Nj/07974 ; at&T Bell Labs/Holmdel//Nj/07733G=n`YCollective Excitations and the Dynamic Stark-Effect in a Coherently Driven Exciton SystemY=n`05.1.4/=n`/=n` Physical Review Letters=n` Article$M_@_$ 1986 Nov 24 $M_@_$57$M_@_$21$M_@_$ 2752-2755 $M_@_$%E\\As01mesant\Procite Databases\WCS\Articles\Schmittrink S 19j86 11.pdfE$M_@_$+239$M_@_$10270㐶>@Vincent, G//Bois, D//Pinard, PHF4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&d*㐶>@Vincent, G.//Bois, D.=r>4Photocapacitance Quenching Effect for Oxygen in GaAs4=r>,01.4.3 "Deep" Localized-Wave-Function Levels,=r> Solid-State Communications=r>1978$M_@_327$M_@_34$M_@_3431-434$M_@_3%>\\As01mesant\Procite Databases\WCS\Articles/Vincent G 1978.pdf,=r>=r>' 0038-1098 $M_@_3)Times Cited:116 Bibliography:13 ENGLISH INST NATL SCI APPL LYON, PHYS MAT LAB, 20 AVE ALBERT EINSTEIN, F-69621 VILLEURBANNE, FRANCE, FN748 Copyright 2003 SciSearch Plus$M_@_365170j.=1?6UGramila, T. J. //Eisenstein, J. P. //Macdonald, A. H. //Pfeiffer, L. N. //West, K. W.U{=vmSAt&T Bell Labs/Murray Hill//Nj/07974 ; Indiana Univ,ms?{=vm04.1.2 =vm Physical Review Letters{=vm Article$M_lno@_ox 1991 MAR 4 $M_lno@_ox66$M_lno@_ox9$M_lno@_ox 1216-1219 $M_lno@_ox%=\\Aeron\Procite Databases\WCS\Articles\Gramila TJ 1991 03.pdf=$M_lno@_ox*Frictional drag between isolated two-dimensional electron gases separated by a thin barrier has been observed at low temperatures in GaAs/AlGaAs double-quaetween isolated two-dimensional electron gases separated by a thin barrier has been observed at low temperatures in GaAs/AlGaAs double-qua^N~j.=@6UGramila, T. J. //Eisenstein, J. P. //Macdonald, A. H. //Pfeiffer, L. N. //West, K. W.U{=vmSAt&T Bell Labs/Murray Hill//Nj/07974 ; Indiana Univ,Dept Phys/Bloomington//in/47405S{=vm?Mutual Friction Between Parallel 2-Dimensional Electron-Systems?{=vm04.1.2 =vm Physical Review Letters{=vm Article$M_lno@_ox 1991 MAR 4 $M_lno@_ox66$M_lno@_ox9$M_lno@_ox 1216-1219 $M_lno@_ox%B\\As01mesant\Procite Databases\WCS\Articles\Gramila TJ 1991 03.pdfB$M_lno@_ox*Frictional drag between isolated two-dimensional electron gases separated by a thin barrier has been observed at low temperatures in GaAs/AlGaAs double-quantum-well structures. Separate electrical connection to the two electron systems allows the injection of current into one and the detection of a small drag voltage across the other. The drag voltage is a direct measure of the interwell momentum relaxation rate. Measurements of this rate are in qualitative agreement with calculations of an interwell Coulomb scattering model.$M_lno@_ox+175$M_lno@_ox, Scattering $M_lno@_ox14050s and Doping of InN, InxGa1-xN, and InxAl1-xN +8"=pt<8"=pt<8"=pt<8"=pt<s and Doping of InN, InxGa1-xN, and InxAl1-xN +8"=pt<8"=pt<8"=pt<8"=pt<IN~5j.=@Z7Jenkins, D. W. //Dow, J. D. 8"=pt<.Univ Notre Dame,Dept Phys/Notre Dame//in/46556.8"=pt<AElectronic-Structures and Doping of InN, InxGa1-xN, and InxAl1-xN +8"=pt<8"=pt<8"=pt<8"=pt< 8"=pt<8"=pt<8"=pt<8"=pt<8"=pt<01.4.1 Point Defects8"=pt< "Physical Review B-Condensed Matter"8"=pt< Article$M_@_\ 1989 Feb 158"=pt<8"=pt<8"=pt<39$M_@_\5$M_@_\ 3317-3329 $M_@_\%B\\As01mesant\Procite Databases\WCS\Articles\Jenkins DW 1989 02.pdfB$M_@_\+126$M_@_\1417001.2.1 Bonds and EnergiesHC "Physical Review B-Condensed Matter"HC1970 September 15HCF01.2.1 Bonds and EnergiesHC "Physical Review B-Condensed Matter"HC1970 September 15HCF01.2.1 Bonds and EnergiesHC "Physical Review B-Condensed Matter"HC1970 September 15HCF$M_|@_tI9ushima9)=p5+High-QualityvN~ +  while deep-level emissions were barely observed in photoluminescence (PL) measurements at room temperature. The full width at half-maximum (FWHM) of the BE emissions was about 70 meV. The FWHM of the  double-crystal X-ray rocking curve (XRC) from the InGaN films was about 8 minutes. This value of FWHM was the smallest one ever reported for InGaN films, and was almost the same as that of the GaN fi lms which were used as the substrate.$M_L<@_4D4L+112$M_L<@_4D4L,_Ingan/ GaN/ X-Ray Rocking Curve/ Band-Edge Emission/ Photoluminescence/ Ai Hn Buffer Layer/ Movpe_$M_L<@_4D4L33610 㐶>@VINCENT, G//CHANTRE, A//BOIS, DHFQELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONSQHF 02.3HF Journal of Applied PhysicsHF1979HF &50HF  &8HF & 5484-5487 HF &%A\\As01mesant\Procite Databases\WCS\Articles\Vincent G 1979 08.pdfAH F &' 0021-8979 HF &)Times Cited:214 Bibliography:16 ENGLISH INST NATL SCI APPL LYON, CNRS, PHY PAT LAB, 20 AVE ALBERT EINSTEIN, F-69621 VI 㐶>h1?"Vincent, G.//Bois, D.//Chantre, A.HFHFHFHF #Photoelectric Memory Effect in GaAs#HF01.5.3 Metastable Centers: EL2HF Journal of Applied PhysicsH>n~5 ;@JNakamura, S. //Mukai, T. )=p59Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka/Anan/Tokushima9)=p5+High-Quality  InGaN Films Grown on GaN Films+)=p507.2.1)=p5 2Japanese Journal of Applied Physics Part 2-Letters2)= p5 Article$M_L<@_4D4L 1992 OCT 15 $M_L<@_4D4L31$M_L<@_4D4L10B$M_L<@_4 D4L L1457-L1459 $M_L<@_4D4L%B\\As01mesant\Procite Databases\WCS\Articles/Nakamura S 1992 10.pdfB$M_L<@_4D4L*InGaN films were grown o n GaN films with a high indium source flow rate and high growth temperatures between 780-degrees-C and 830-degrees-C. Strong and sharp band-edge (BE) emissions between 400 nm and 445 nm were observed,  while deep-level emissions were barely observed in photoluminescence (PL) measurements at room temperature. The full width at half-maximum (FWHM) of the BE emissions was about 70 meV. The FWHM of the 㐶>[?VINCENT, G//CHANTRE, A//BOIS, DHFQELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONSQHF 02.3HF Journal of Applied PhysicsHF1979HF &50HF  &8HF & 5484-5487 HF &%<\\Aeron\Procite Databases\WCS\Articles\Vincent G 1979 08.pdf<HF .5.3 Metastable Centers: EL2HF Journal of Applied PhysicsH^N~ + ;@%Nakamura, S. //Senoh, M. //Mukai, T. % =@v#X9Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka/Anan/Tokushima9 =@v#X= P-Gan/N-InGaN/N-GaN Double-Heterostructure Blue-Light- Diodes= =@v#X10.1.2 =@v#X 2Japanese Journal of Applied Physics Part 2-Lett ers2 =@v#X Articlep$M_y{@_{p&p1993p$M_y{@_{p&p32=@v#X1A/B =@v#XL8-L11=@v#X%@\\As01mesant\Procite Databases\WCS\Articles/Nakamura 1993 01.pdf@p$M_y{@_{p&p*P-GaN/n -InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes LEDs were fabricated successfully for the first time. The output power was 125 muW and the external quantum efficiency was as high a s 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This val ue FWHM of was the smallest ever reported for blue GaN LEDs.p$M_y{@_{p&p+112p$M_y{@_{p&p,P-Gan/N-Ingan/N-Gan/ Double Heterostructure/ Output㐶>h1?/Hurtes, C.//Boulou, M.//Mitonneau, A.//Bois, D. HCHCHCHCHCHCHCHCHC^N~  ue FWHM of was the smallest ever reported for blue GaN LEDs.p$M_y{@_{p&p+112p$M_y{@_{p&p,P-Gan/N-Ingan/N-Gan/ Double Heterostructure/ Output  External Quantum Efficiency/ Blue Leds/ Blue Band-Edge Ain Buffer Layer/ Growth/ Movpep$M_y{@_{p&p33680㐶>@/Hurtes, C.//Boulou, M.//Mitonneau, A.//Bois, D. HCHCHCHCHCHCHCHCHCHCHC HC5Deep-Level Spectroscopy in High-Resistivity Materials5HC,01.4.3 "Deep" Localized-Wave-Function Levels,HC Applied Physics LettersHC1978HC32HC12HC821-823HC%@\\As01mesant\Procite Databases\WCS\Articles\Hurtes C 1978 06.pdf@HC' 0003-6951 HC)Times Cited:158 Bibliography:9 ENGLISH LAB ELECTR & PHYS APPL 3, AVE DESCARTE{S, F-94450 LIMEIL BREVANNES, FRANCE, FF868 Copyright 2003 SciSearch PlusHC65200>h1?!Chantre, A//Vincent, G.//Bois, D.HCHCHCHCYS MAT LAB, F-6921 LYON, FRANCE, LR247 Copyright 2003 SciP@p 5>@!Chantre, A//Vincent, G.//Bois, D.HCHCHCHC'Deep-Level Optical Spectroscopy in GaAs'HC,01.4.3 "Deep" Localized-Wave-Function Levels,HC "Physical Review B-Condensed Matter"HC1981HC23HC10HC 5335-5359 HC%A\\As01mesant\Procite Databases\WCS\Articles\Chantre A 1981 05.pdfAHC' 0163-1829 HC)Times Cited:276 Bibliography:76 ENGLISH CTR MICROELECTR GRENOBLE, CTR NATL ETUDES TELE COMMUN, F-38240 GRENOBLE, FRANCE, INST NATL SCI APPL, PHYS MAT LAB, F-6921 LYON, FRANCE, LR247 Copyright 200C3 SciSearch PlusHC6521010108 $M_4$@_04%9\\Aeron\Procite Databases\WCS\Articles/Nelson RJ 1979.pdf9$M_4$@_04+159$M_4$@_0433810108 $M_4$@_04%9\\Aeron\Procite Databases\WCS\Articles/Nelson RJ 1979.pdf9$M_4$@_04+159$M_4$@_0433810108 $M_4$@_04%9\\Aeron\Procite Databases\WCS\Articles/Nelson RJ 1979.pdf9$M_4$@_04+159$M_4$@_0433810108 $M_4$@_04%9\\Aeron\Procite Databases\WCS\Articles/Nelson RJ 1979.pdf9$M_4$@_04+159$M_4$@_0433810FviN~le major sputtering theories, with particular attention to the Sigmund theory for linear cascade sputtering. Different proposals of each of the parameters in this theory are presented and compared with the GaAs data. These parameters are the surface binding energy, the nuclear stopping power, and the factor a, which represents the fraction of energy available for sputtering. Use of the different pa rameters results in a large variation in the predictions. Topics also considered are the angle dependence of the sputtering yields, sputter threshold energy, and channeling effects in the sputter yiel ds of compound semiconductors. Spike sputtering effects are evident in the sputtering yields of GaAs by krypton and xenon ions.%$M_\xy@_yD+45$M_\xy@ _yD,Gaas/ Semiconductors/ Sputter Yields/ Sigmund Theory/ Iii-V-Semiconductors/ Gallium-Arsenide/ Atomic-Collisions/ Energy-Dependence/ Binding-Energy/ Thin-Films/ Light-Ions/ Theoretical A `spects/ Argon Implantation/ Amorphous Targets$M_\xy@_yD62050M<1?lSchaefer, J. A.x(=t!@3Univ Kassel,Fachbereich Phys/W-3500 Kassel//Germany3x(=t!@JElectronic and Structural-Prs\WCS\Articles\Schaffer JA 1991.pdf'Z"@_c"te"@_le" Z"Z"@_c"te"@_le" Z"*PIn this paper we will review the scientific literature which addresses the atomic geometry and electronic structure of clean and hydrogenated semiconductor surfaces. In particular, results related to vibrational studies will be presented. First, surfaces of elemental semiconductors (Ge, Si), Ge/Si-alloys, and III-V compound semiconductors chemisorb in a first stage atomic hydrogen b^VN~ 5}Articles\Huant S 1990 09.pdf?|$M_@_Z|+130|$M_@_Z|14570M<@bMalherbe, J. B.=Hs3Univ Pretoria,Dept Phys/Pretoria 0002//South Africa3=Hs^Sputtering of Compound Semiconductor Surfaces .1. Ion-Solid Interactions and Sputtering Yields^=Hs08.2.2=Hs :CRC Critical Reviews in Solid State and Materials Sciences:=Hs Review$M_\xy@_yD1994$M_\xy@_yD19$M_\xy@_yD2$M_\xy@_yD55-127$M_\xy@_yD239$M_\xy@_yD%@\\As01mesant\Procite Databases\WCS\Articles/Malherbe JB 1994.pdf@*%Several phenomena occur on the surface of a solid when being bombarded by energetic ions. A short general review is given of the major ion-solid interactions on compound semiconductor surfaces. An in-depth discussion is presented of the total sputtering yields of component semiconductors. For this discussion, GaAs is assumed to be the prototype compound semiconductor because most experimental measurements exist for GaAs. To exclude any chemical effects in the sputter yields, only the total sputtering yield data for argon ion bombardment of GaAs are compared with the predictions of the major sputtering theories, with particular attention to the Sigmund theory for linear cascade sputtering. Different proposals of each of the parameters in this theory are presented and compared withM<1?lSchaefer, J. A.x(=t!@3Univ Kassel,Fachbereich Phys/W-3500 Kassel//Germany3x(=t!@JElectronic and Structural-PrCs3c5M<@lSchaefer, J. A.x(=t!@3Univ Kassel,Fachbereich Phys/W-3500 Kassel//Germany3x(=t!@JElectronic and Structural-Properties of Hydrogen on Semiconductor SurfacesJx(=t!@06.3.1x(=t!@ Physica B x(=t!@ ReviewZ"@_c"te"@_le" Z"1991Z"@_c"te"@_le" Z"170Z"@_c"te"@_le" Z"1-4Z"@_c"te"@_le" Z"45-68Z"@_c"te"@_le" Z"137Z"@_c"te"@_le" Z"%A\\As01mesant\Procite Databases\WCS\Articles\Schaffer JA 1991.pdf,Z"@_c"te"@_le" Z"Z"@_c"te"@_le" Z"*PIn this paper we will review the scientific literature which addresses the atomic geometry and electronic structure of clean and hydrogenated semiconductor surfaces. In particular, results related to vibrational studies will be presented. First, surfaces of elemental semiconductors (Ge, Si), Ge/Si-alloys, and III-V compound semiconductors chemisorb in a first stage atomic hydro and Fm Quantum Noise in Semiconductor-Lasers .2. Comparison of Theoretical and Experimental Results for AlGaAs Lasersxm=p|10.4.3m=p| #IEEE Journal of Quantum Electronics#m=p| Article$M_,@_,1983$M_,@_,19$M_,@_,1$M_,@_,47-58$M_,@_,%?\\Aeron\Procite Databases\WCS\Articles/Yamamoto Y 1983 01 2.pdf?$=v| #IEEE Journal of Quantum Electronics#^N~,5W$M_,@_,+103$M_,@_,34310;@$Yariv, A. //Nakamura, M. =v|OCaltech/Pasadena//Ca/91125 ; Hitachi Ltd,Cent Res Lab/Kokubunji/Tokyo 185/JapanO=v|)Periodic Structures for Integrated Optics)=v|05.3.1=v| #IEEE Journal of Quantum Electronics#=v| Article"$M_$""@_ "$"1977"$M_$""@_ "$"13"$M_$""@_ "$"4"$M_$""@_ "$"233-253"$M_$""@_ "$"%?\\As01mesant\Procite Databases\WCS\Articles/Yariv A 1977 04.PDF?"$M_$""@_ "$"+130"$M_$""@_ "$"34340/ Radiative Recombination/ 3-Dimensional Growth Visible Luminescence/ Monolayer Coverage$M_D4 @_, D34630slands/ Highly Strained Inxga1-Xas/ Atomic-Force Inas Islands/ Radiative Recombination/ 3-Dimensional Growth Visible Luminescence/ Monolayer Coverage$M_D4 @_, D34630f strained layers on high-index semiconductor surfaces.krrent developments in the exciting field of self-assembled semiconductor quantum-dot structures during epitaxial growth of lattice mismatched systems. The formation of quantum-sized islands in the cohrrent developments in the exciting field of self-assembled semiconductor quantum-dot structures during epitaxial growth of lattice mismatched systems. The formation of quantum-sized islands in the cohrrent developments in the exciting field of self-assembled semiconductor quantum-dot structures during epitaxial growth of lattice mismatched systems. The formation of quantum-sized islands in the coh6)Y =m25;@F Notzel, R.  Z=)pvxf8Paul Drude Inst Festkorperelekt,Hausvogteipl 5-7,D-101178Z=)pvxf/Self-Organized Growth of Quantum-Dot Structures/Z=)pvxf07.4.3Z=)pvxfZ=)pvxf $Semiconductor Science and Technology$Z=)pvxf Review$M_D4 @_, DOct 1996$M_D4 @_, D11$M_D4 @_, D10$M_D4 @_, D 1365-1379 $M_D4 @_, D%@\\As01mesant\Procite Databases\WCS\Articles/Notzel R 1996 10.pdf@$M_D4 @_, D*kThis paper reviews the current developments in the exciting field of self-assembled semiconductor quantum-dot structures during epitaxial growth of lattice mismatched systems. The formation of quantum-sized islands in the coherent Stranski-Krastanow growth mode, with focus on the possibilities of vertical and lateral ordering, and their electronic properties are described in detail. A overview is given of the self-organizing formation and optical properties of buried (InGa)As quantum discs found in a new growth mode in the metalorganic vapour-phase epitaxy of strained layers on high-index semiconductor surfaces.k$M_D4 @_, D+111$M_D4 @_, D,Molecular-Beam Epitaxy/ Vapor-Phase Epitaxy/ Nanoscale Islands/ Highly Strained Inxga1-Xas/ Atomic-Force Inas IsM<1?vWilmsen, C. W.//Szpak, S.=q/uColorado State Univ,Dept Elect Engn/Ft Collins//Co/80523 ; Naval Ocean Syst Ctr,Div Elect Mat Sci/San Diego//Ca/es Triangle Pk//Nc/27709 ; N Carolina State Univ/Raleigh//Nc/27695Od=Brn^N~$5 doped with Er atoms. Aspects of Er incorporation in the III-V crystal host, photoluminescence properties, and prototype electroluminescent devices are addressed. Details of some of the first observations of photoluminescence of Er atoms in III-V nitride semiconductors, in particular GaN epilayers, are discussed. The GaN epilayers were optically excited using an argon-ion laser and spectra, center ed at 1.54 mu m, were observed at 6, 77 and 300 K. The spectra display many of the allowed transitions typical of the Er3+ configuration and are nearly as intense at room temperature as at 77 K. This  result indicates that the wide bandgap III-V semiconductors may be ideal host materials for Er-doped electroluminescent devices.$M_@_'+39$M_ @_',Rare-Earth Ions/ 1.54 Mu-M/ Doped Gaas/ Fiber Amplifier/ Phase Epitaxy/ Silicon/ Photoluminescence/ 1.54-Mu-M/ Transmission/ Fabrication$M_@_'62080 ers/=(vԫ Article$M_,p@_ 1988 Oct 17ȓ=(vԫȓ=(vԫ53ers/=(vԫ Article$M_,p@_ 1988 Oct 17ȓ=(vԫȓ=(vԫ53ers/=(vԫ Article$M_,p@_ 1988 Oct 17ȓ=(vԫȓ=(vԫ53vD=(Ga,Mn)As: a New Diluted Magnetic Semiconductor Based on GaAsQ=vDQ=vD5Q=vDB01.1.1 Electrons, Ions and Photons in Electric and Magnetic FieldsB(r=vD Applied Physi)N~25M<@Zavada, J. M.//Zhang, D. H.d=BrnhOUsa,Res Off/Res Triangle Pk//Nc/27709 ; N Carolina State Univ/Raleigh//Nc/27695Od=BrnhBLuminescence Properties of Erbium in III-V Compound SemiconductorsBd=Brnh,01.4.3 "Deep" Localized-Wave-Function Levels,(?=Brnh Solid-State Electronicsd=Brnh Review$M_@_'Jul 1995$M_@_'38$M_@_'7$M_@_' 1285-1293 $M_@_'48$M_@_'%A\\As01mesant\Procite Databases\WCS\Articles\Zavada JM 1995 07.pdfA$M_@_'*Optoelectronic materials doped with Er atoms are receiving widespread attentions due to their impact on optical communication systems operating at 1.54 mu m. Optical amplifiers based on Er-doped fibers have demonstrated major improvements in link distance, data rates and reduced needs for signal regeneration. III-V semiconductors doped with Er offer the prospect of very stable, temperature-insensitive, laser diodes emitting at 1.54 mu m. This paper provides a review of the luminescence characteristics of III-V semiconductors=(vԫDNew Approach to the Atomic Layer Epitaxy of GaAs Using a Gas-StreamD/=(vԫ06.4.1/=(vԫ Applied Physics Letters/=(vԫ Article$M_,p@_ 1988 Oct 17ȓ=(vԫȓ=(vԫ53B01.1.1 Electrons, Ions and Photons in Electric and Magnetic FieldsB(r=vD Applied Physi^N~$5,5;@TOhno, H. //Shen, A. //Matsukura, F. //Oiwa, A. //Endo, A. //Katsumoto, S. //Iye, Y. T(r=vDlTohoku Univ,Elect Commun Res Inst,Lab Electr Intelligent ; Univ Tokyo,Inst Solid State Phys,Tokyo 106,Japanl(r=vD=(Ga,Mn)As: a New Diluted Magnetic Semiconductor Based on GaAsQ=vDQ=vD5Q=vDB01.1.1 Electrons, Ions and Photons in Electric and Magnetic FieldsB(r=vD Applied Physics Letters(r=vD ArticleW$M_$\@_T0 U Jul 15, 1996 W$M_$\@_T0 U69W$M_$\@_T0 U3W$M_$\@_T0 U363-365W$M_$\@_T0 U%>\\As01mesant\Procite Databases\WCS\Articles\Ohno H 1996 07.pdf>W$M_$\@_T0 U*A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increasr^4Microscopic Theory of Atomic Diffusion Mechanisms in4x=r^08.1.1x=r^ Physical Review Lettersx=r^ Article$M_@_$) 1984 May 14 =r^52$M_@_$)20$M_@_$) 1814-1817 $M_@_$)%8\\Aeron\Procite Databases\WCS\Articles\Car R 1984 05.pdf'hhH9XXF=r^roscopy of III-V Compound Semiconductor (001) SurfacesL@@_$)34990^N~p45<5j.=@8(Mendez, E. E. //Esaki, L. //Wang, W. I. (I=ks8ipIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Francis Bitter Natl Magnet Lab/Cambridge//Ma/02139pI=ks8i@Resonant Magnetotunneling in GaAlAs-GaAs-GaAlAs Heterostructures@I=ks8i04.1.5.1=ks8i "Physical Review B-Condensed Matter"I=ks8i ArticleH$M_QS@_Sl@H 1986 Feb 15 H$M_QS@_Sl@H33H$M_QS@_Sl@H4H$M_QS@_Sl@H 2893-2896 H$M_QS@_Sl@H%A\\As01mesant\Procite Databases\WCS\Articles\Mendez EE 1986 02.pdf,H$M_QS@_Sl@HH$M_QS@_Sl@H+127H$M_QS@_Sl@H14590;@lFetterman, H. R. //Tannenwald, P. E. //Clifton, B. J. //Parker, C. D. //Fitzgerald, W. D. //Erickson, N. R. lx= vb(VMit,Lincoln Lab/Lexington//Ma/02173 ; Univ Calif Berkeley,Dept Phys/Berkeley//Ca/94720Vx= vb(LFar-IR Heterodyne Radiometric Measurements With Quasi- Schottky Diode Mixersx= vb(x= vb(Fx= vb(09.2.1x= vb(x= vb( Applied Physics Le;[?GGoldberg, B. B. //Heiman, D. //Pinczuk, A. //Pfeiffer, L. //West, K. W.G=Xu:Mit,Francis Bitter Natl Magnet Lab/Cambridge//Ma/02139 ; Boston Un78.pdf<$M_BTC@_LC+102)$M_BTC@_LC35060 PN~,545M<@&Xue, Q. K.//Hashizume, T.//Sakurai, T.&@=Br\gTohoku Univ,Inst Mat Res,Sendai,Miyagi 98077,Japan ; Acad Sinica,Inst Phys,Beijing 100080,Peoples R China ; Hitachi Ltd,Adv Res Lab,Hatoyama,Saitama 35003,Japan@=Br\gLScanning Tunneling Microscopy of III-V Compound Semiconductor (001) SurfacesL@=Br\g06.1.2(?=Br\g Progress in Surface Science@=Br\g Review$M_ @_( Sep-Oct 1997 $M_ @_(56$M_ @_(1-2$M_ @_(1-131$M_ @_(233$M_ @_(%>\\As01mesant\Procite Databases\WCS\Articles\Xue QK 1997 09.pdf>$M_ @_(*kWhile the (001) oriented substrate of compound semiconductors are most commonly used in fabrication of wireless and opto-electronic devices by molecular beam epitaxy, metallorganic chemical vapor deposition and related techniques, their surface structures have been puzzling from the beginning of the development of the techniques with which these materials are artificially prepared. This paper reviews the advances in comprehensive understanding of the geometric and electronic structures and chemical properties of the principal reconstructions found on the (001) surface of III-V compound semiconductors including arsenides, such as GaAs, InAs and AlAs, phosj.=1?8(Mendez, E. E. //Esaki, L. //Wang, W. I. (I=ks8ipIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Mit,Francis Bitter Natl Magnet Lab/Camb1x= vb(x= vb( Applied Physics Le^N~<5 Articleb$M_,km@_m(6,b 1990 Jul 30 b$M_,km@_m(6,b65b$M_,km@_m(6,b5b$M_,km@_m(6,b641-644b$M_,km@_m(6,b%C\\As01mesant\Procite Databases\WCS\Articles\Goldberg BB 1990 07.pdf,b$M_,km@_m(6,bb$M_,km@_m(6,b8+127b$M_,km@_m(6,b35080 M<1? Monch, W. h?=Bu-HUniv Duisburg Gesamthsch,Festkorperphys Lab/D-4100 Duisburg//Fed Rep GerHh?=Bu-7On the Surfac e Physics of III-V-Compound Semiconductors7h?=Bu-06.2.0=Bu-=Bu- 1Festkorperprobleme-Advances in Solid State Phyics1h?=Bu- Review$M_|@_tT+1984$M_|@_tT+24$M_|@_tT+ 229-268$M_|@_tT+185$M_|@_tT++32$M_|@_tT+62100^,!;@ONicholas, R. J. //Portal, J. C. //Houlbert, C. //Perrier, P. //Pearsall, T. P. OL=r0Clarendon Lab/Oxford Ox1 3pu//England ; Inst Natl Sci Appl! Lyon/F-31077 Toulouse//France ; Thomson Csf,Csf/F-91401 Orsay//FranceL=r0ZExperimental-Determination of the Effective Masses for Gaxin1-Xasyp1-Y Alloys Grown on !InpZL=r001.3.4 Electron MassesL=r0 Applied Physics LettersL=r0 Article$M!_L< @_4 L1979$M_L< @_4 L34$M_L< @_4 L8$M_L< @_4 L492-494$M_L< @_4! L%>\\As01mesant\Procite Databases\WCS\Articles/Portal JC 1979.PDF>$M_L< @_4 L+108$M_L< @_4 L35220"(?=Brnk07.4.1i=Brnk $Semiconductor Science and Technology$(?=Brnk Review$M_\<@_"(?=Brnk07.4.1i=Brnk $Semiconductor Science and Technology$(?=Brnk Review$M_\<@_"(?=Brnk07.4.1i=Brnk $Semiconductor Science and Technology$(?=Brnk Review$M_\<@_s in heterostructures have d"ominated semiconductor research during the last ten years. We review the theory and experimental work on stresses in III-V semiconductor heterostructures in this paper. First large-area lattice mismatnk $Semiconductor Science and Technology$(?=Brnk Review$M_\<@_^rN~2,D5"ayer-substrate structures are easy to model because substrate distortion can be neglected and strain in the epilayer is a simple biaxial tetragonal distortion. Calculated splitting of band edges, modi"fication of bandgaps and shifts of Raman modes show good agreement with experiments. Edges of a stripe relax stress in the stripes and induce stress in the substrate. Since stresses in the stripe and " the substrate are coupled, calculation of stresses in stripes and substrates is more involved. Recent finite element (FE) calculations of these stresses are discussed in detail and compared with the a" pproximate analytical models and with luminescence and Raman measurements. FE calculations of stresses in buried quantum wires, stressor-induced quantum wires and quantum dots are also discussed. The " results of these calculations are used to determine stability and luminescence of the quantum wires and dots and compared with the experimental results. Finally self-organized quantum dots consisting " of islands formed during the 3D growth of InAs layers on GaAs are discussed. A possible explanation of the recent observation that they are formed in vertical columns embedded in GaAs is suggested." g$M_\<@_4.'4+32$M_\<@_4.'4,Chemical-Vapor-Deposition/ Critical-Layer-Thickness/ Molecular-Beam Epitaxy/ Misfit Dislocations/ Low-Temperature/ #Etching and Sputter EtchingJ =tv|08.2.2 =tv| &Journal of the Electrochemical Society& =tv| #Article$M_&(@_(PA1986 APR$M_&(@_(PA133$M_&(@_(PA4$M_&(@_(PA784-787^N~2$"M<@$Jain, S. C.//Willander, M.//Maes, H.$(?=BrnkImec,Kapeldreef 75,B-3001 Louvain,Belgium ; Linkoping Univ,Dept Phys & Measurement Technol,S-58183 Li"nkoping,Sweden ; Clarendon Lab,Oxford Ox1 3pu,England(?=BrnkbStresses and Strains in Epilayers, Stripes and Quantum Structures of III-V Compound Semiconductorsb"(?=Brnk07.4.1i=Brnk $Semiconductor Science and Technology$(?=Brnk Review$M_\<@_"4.'4May 1996$M_\<@_4.'411$M_\<@_4.'45$M_\<@_4.'4641-671$M_\<@_4.'4"150$M_\<@_4.'4%?\\As01mesant\Procite Databases\WCS\Articles\Jain SC 1996 05.pdf?$M_\<@_4.'4*gStresses and strains in heterostructures h"ave dominated semiconductor research during the last ten years. We review the theory and experimental work on stresses in III-V semiconductor heterostructures in this paper. First large-area lattice m"ismatched layers (InGaAs and InGaP layers grown on GaAs or InP substrates) and thermally strained layers (GaAs, GaP and InP layers grown directly on Si) are considered. The stresses in large-area epil#Etching and Sputter EtchingJ =tv|08.2.2 =tv| &Journal of the Electrochemical Society& =tv| #Article$M_&(@_(PA1986 APR$M_&(@_(PA133$M_&(@_(PA4$M_&(@_(PA784-787@_Lw\\As01mesant\Procite Databases\WCS\Articles/Panish MB 1980.pdf>n@_Lw Paoli, T. L.  =LuP$0'Bell Tel Labs Inc/Murray Hill//Nj/07974' =LuP$0/Waveguiding in a Stripe-Geometry Junction %Laser/ =LuP$010.3.1 =LuP$0 #IEEE Journal of Quantum Electronics# =LuP$0 Article:$M_%::@_:X&:1977:$M_::@_:X&:13:$M_::@_:X&:8:$M_::@_:X&:662-668:$M_::@_:%X&:%@\\As01mesant\Procite Databases\WCS\Articles/Paoli TL 1977 08.pdf@:$M_::@_:X&:+101:$M_::@_:X&:35390&;1?H Paoli, T. L. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'VChanges in Optical-Properties of Cw (Alga) as Junction Lasers During Accelerated AgingV10.1.2 #IEEE Journal of fPendry, J. B. =lu@Ȓ4Univ London Imperial Coll Sci Technol & Med,Blackett4=lu@ȒPhotonic Band Structures'=lu@Ȓ05.3.2=lu@Ȓ Journal of Modern Optics=lu@Ȓ Article$M_t@_l 'Feb 1994$M_t@_l 41$M_t@_l 2$M_t@_l 209-229$M_t@_l %9\\Aer$M_t@_l 41$M_t@_l 2$M_t@_l 209-229$M_t@_l %9\\Aer7g Y14L5&;@H Paoli, T. L. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'VChanges in Optical-Properties of Cw (Alga) as Junction Lasers During Accelerated AgingV10.1.2 #IEEE Journal of &Quantum Electronics# Article1977135351-359%@\\As01mesant\Procite Databases\WCS\Articles/Paoli TL 1977 05.pdf@+10135400';@fPendry, J. B. =lu@Ȓ4Univ London Imperial Coll Sci Technol & Med,Blackett4=lu@ȒPhotonic Band Structures'=lu@Ȓ05.3.2=lu@Ȓ Journal of Modern Optics=lu@Ȓ Article$M_t@_l 'Feb 1994$M_t@_l 41$M_t@_l 2$M_t@_l 209-229$M_t@_l %>\\As0'1mesant\Procite Databases\WCS\Articles/Pendry JB 1994.pdf>$M_t@_l *Building complex materials with structures on a scale comparable to the wavelength of light offers(<09.2.2=qh< "British Journal of Applied Physics"=qh< 1966$M_4$@_m417$(M_4$@_m47$M_4$@_m4841-850R=qh<R=qh<%:\\Aeron\Procite Databases\WCS\Articles/B(utcher PN 1966.pdf:$M_4$@_m4)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_4$@_m4+108$M_4$@_m4,A1(@9668007700001$M_4$@_m465300y1a!Q LT+ԫ>Resonant Tunneling of Holes in AlAs-GaAs-AlAs Heterostructures>=(vԫ04.1.1.1=(vԫ Applied Physics Letters+=(vԫ Article$M_@_| 1985 Aug 15=(vԫ=(vԫ47$M_+@_|4$M_@_|415-417$M_@_|%A\\As01mesant\Procite Databases\WCS\Articles\Mendez EE 1985 08.pdf,Xh+tH9XwXFw=(vԫ+124$M_@_|14600,;@΋OBhattacharya, R. N. //Shen, H. //Parayanthal, P. //Pollak, F. H. //Aharoni, H. OP=hXoL+XCuny Brooklyn Coll,Dept Phys/Brooklyn//Ny/11210 ; Solar En,ergy Res Inst/Golden//Co/80401XP=hXoL+{Electroreflectance and Photoreflectance Study of the Space-Charge Region in Semiconductors: (in-Sn-O)/Inp as a Model System{,P=hXoL+05.1.3P=hXoL+P=hXoL+ "Physical Review B-Condensed Matter"P=hXoL+, Article$M_RS@_SP' Mar 15, 1988 $M_RS@_SP'37$M_RS@_SP'8$M_RS@_SP' 404,4-4050 $M_RS@_SP'%G\\As01mesant\Procite Databases\WCS\Articles\Bhattacharya RN 1988 03.pdfG$M_RS@_SP'+133$M_RS@_SP,'35790*Burstein, E. //Pinczuk, A. //Mills, D. L. *`=t>Univ Penn,Dept Phys/Philadelphia//Pa/19104 ; Univ Penn,Struct Matter Res Lab/Philadelphia//Pa/1# :j~jT5D)E?@+140/9$M_D894:9@_,:95D/960900*;@ԊPetroff, P. M. &7=pyt'Bell Tel Labs Inc/Murray Hill//Nj/07974'&7=pytOTransmission Electron Microscopy of Inte*rfaces in III-V Compound SemiconductorsO&7=pyt06.1.2=pyt &Journal of Vacuum Science & Technology&&7=py*t Article@_<`t@_ll 1977 Jul-Aug @_<`t@_ll14@_<`t@_ll4@_<`t@_l*l973-978@_<`t@_ll%B\\As01mesant\Procite Databases\WCS\Articles\Petroff PM 1977 07.pdfB@_<`t@_ll+153@_<`t@_l*l35540+j.=@94Mendez, E. E. //Wang, W. I. //Ricco, B. //Esaki, L. 4=(vԫ7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=(v,ergy Res Inst/Golden//Co/80401XP=hXoL+{Electroreflectance and Photoreflectance Study of the Space-Charge Region in Semiconductors: (in-Sn-O)/Inp as a Model System{,P=hXoL+05.1.3P=hXoL+P=hXoL+ "Physical Review B-Condensed Matter"P=hXoL+, Article$M_RS@_SP' Mar 15, 1988 $M_RS@_SP'37$M_RS@_SP'8$M_RS@_SP' 404,4-4050 $M_RS@_SP'%B\\Aeron\Procite Databases\WCS\Articles\Bhattacharya RN 1988 03.pdfB$M_RS@_SP'+133$M_RS@_SP', 35790&V+[D\-;@*Burstein, E. //Pinczuk, A. //Mills, D. L. *`=t>Univ Penn,Dept Phys/Philadelphia//Pa/19104 ; Univ Penn,Struct Matter Res Lab/Philadelphia//Pa/1-9104 ; Bell Tel Labs Inc/Holmdel//Nj/07733 ; Univ Calif Irvine,Dept Phys/Irvine//Ca/92717`=t>oInelastic Light-Scattering by Charge Carrier Excitations in Two-Dime-nsional Plasmas: Theoretical Considerationso`=t>02.4.4`=t> Surface Science`=t> Article-$M_@_<1980$M_@_<98$M_@_<1-3$M_@_<451-468-$M_@_<%?\\As01mesant\Procite Databases\WCS\Articles/Burstein E 1980.pdf,$M_@_<$M_@_<+107$M_-@_<35820. GaAs.sub.rx P.sub.x J. of Materials Science, vol. 4, 1969, pp. 223-235. Blakeslee, A. E., Vapor Growth of a Semiconductor SuperlatticeJ. Electrochem. Soc., vol. 118, No. 9, Sep. 1971, pp. 1459-1463. . GaAs.sub.rx P.sub.x J. of Materials Science, vol. 4, 1969, pp. 223-235. Blakeslee, A. E., Vapor Growth of a Semiconductor SuperlatticeJ. Electrochem. Soc., vol. 118, No. 9, Sep. 1971, pp. 1459-1463. . GaAs.sub.rx P.sub.x J. of Materials Science, vol. 4, 1969, pp. 223-235. Blakeslee, A. E., Vapor Growth of a Semiconductor SuperlatticeJ. Electrochem. Soc., vol. 118, No. 9, Sep. 1971, pp. 1459-1463. . GaAs.sub.rx P.sub.x J. of Materials Science, vol. 4, 1969, pp. 223-235. Blakeslee, A. E., Vapor Growth of a Semiconductor SuperlatticeJ. Electrochem. Soc., vol. 118, No. 9, Sep. 1971, pp. 1459-1463. pp. 1459-1463. CN~oTl.<@'Blakeslee, A. Eugene//Matthews, John W.'HMethod of making semiconductor superlattices free of misfit dislocationsH07.2.2280070 US4088515 US5/9/1978^DE2.416550A1 DE2416550C2 FR2225207A1 FR2225207B1 GB1457585A JP49131679A2 JP53014463B4 US4088515^YUS3309553 US3322575 US3626257 US3626328 US3691476 US3696262 US3721583 US3752713 US3821033Y/Abrahams. et al., Stresses in Heteroepitaxial Layers: GaAs.sub.rx P.sub.x on GaAsJ. Applied Physics, vol. 40, No. 9, Aug. 1969, pp. 3754-3758. Abrahams et al., Dislocation Morphology in Graded Heterojunctions:. GaAs.sub.rx P.sub.x J. of Materials Science, vol. 4, 1969, pp. 223-235. Blakeslee, A. E., Vapor Growth of a Semiconductor SuperlatticeJ. Electrochem. Soc., vol. 118, No. 9, Sep. 1971, pp. 1459-1463. .Ewing et al., Compositional Inhomogeneities in GaAs.sub.rx P.sub.x Alloy Epitaxial LayersJ. Applied Physics, vol. 39, No. 13, Dec. 1968, pp. 5943-5948./"US4198644 US4205331 US4848273 US4860068 US.5208182 US5210428 US5422533 US5445897 US5900071 US5981400 US4208667 US4216037 US4378259 US4448854 US4789421 US4829355 US5459331 US5610366 US4278474 US4348686 US4558336 US4642144 US4927471 US4928154 US.4517047 US4548658 US4861417 US4918493 US5075744 US5158907 US5294808 US5300794 US5659187 US5747728 USRE33671 US6231668 US4697202 US4710788 US5047111 US5066355 US4163238 US4194935 US4233090 US4261771 US.4769341 US4771321 US4963508 US5001521 US5216262 US5285086 US5769943 US5810924%;\\As01mesant\Procite Databases\WCS\Patents\US04088515__.pdf;'H01L 21/20; H01L 29/6+52680/;h1?$Chattopadhyay, D. //Queisser, H. J. $HHB9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9HHB;Eax Planck Inst Festkorperforsch/W-7000 Stuttgart1#=uyxFrequency and DensiON~2t\50nt-to 10(12) cm-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole pl0asma. The fundamental theoretical and experimental aspects of the radiative recombination processes are discussed with special attention to the GaAs/Al(x)Ga(1-x)As and Ga(x)In(1-x)As/Al(y)In(1-y)As ma0terials systems. The experimental investigations of these effects are performed in the limit of intense exciting fields by tuning the density of photogenerated quasi-particles and the frequency of the0 exciting photons. Under these conditions the optical response of the quantum well strongly deviates from the well-known linear excitonic behaviour. The optical properties of the crystal are then no l0onger controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogener0ated quasi-particles, resulting in dramatic changes of the emission properties of the semiconductor. The systematic investigation of these radiative recombination processes allows us to selectively mo0nitor the many-body induced changes in the linear and non-linear optical transitions involving quantized states of the quantum wells. The importance of these effects, belonging to the physics of highl0y excited semi-conductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing las1;[?n/Levine, H. //Libby, S. B. //Pruisken, A. M. M. /`=XxlԫVSchlumberger Doll Res/Ridgefield//Ct/06877 ; Brown Univ,Dept Phys/Providence//Ri/02912V^N~B\|/;@$Chattopadhyay, D. //Queisser, H. J. $HHB9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9HHB;E/lectron-Scattering by Ionized Impurities in Semiconductors;HHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEHHB/ Reviews of Modern PhysicsHHB ReviewHHB 1981 October HHB53H/HB4HHB745-768HHB%G\\As01mesant\Procite Databases\WCS\Articles\Chattopadhyay D 1981 10.pdfG/\HHB+157HHB358400 controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated 0 controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated 0 controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated 0 controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated 0 controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated "RN~2|d0ensities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon 0absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives direct access to the excited 0 excitonic states in the quantum wells owing to the symmetry properties and the selection rules for artificially layered semiconductor heterostructures. Different radiative recombination processes can 0 be selectively tuned at exciting photon energies resonant with real states or in the continuum of the conduction band depending on the actual density of photogenerated carriers. We define three densit0 y regimes in which different quasi-particles are responsible for the dominant radiative recombination mechanisms of the crystal: (i) The dilute boson gas regime, in which exciton density is lower than0 10(10) cm-2. Under this condition the decay of free and bound excitons is the main radiative recombination channel in the crystal. (ii) The intermediate density range (n < 10(11) cm-2) at which excit0 onic molecules (biexcitons) and inelastic excitonic scattering processes contribute with additional decay mechanisms to the characteristic luminescence spectra. (iii) The high density range (n congrue0nt-to 10(12) cm-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole pl1;[?n/Levine, H. //Libby, S. B. //Pruisken, A. M. M. /`=XxlԫVSchlumberger Doll Res/Ridgefield//Ct/06877 ; Brown Univ,Dept Phys/Providence//Ri/02912V^N~2lt0;@ Cingolani, R. //Ploog, K. #=uy1Max Planck Inst Festkorperforsch/W-7000 Stuttgart1#=uyxFrequency and Densi0ty Dependent Radiative Recombination Processes in III-V Semiconductor Quantum-Wells and Superlatticesx#=uy03.3.1#=uy Advance0s in Physics#=uy Review$M_DF@_Faܴ1991$M_DF@_Faܴ40$M_DF@_Faܴ50$M_DF@_Faܴ535-623$M_DF@_Faܴ%@\\As01mesant\Procite Databases\WCS\Articles/Cingolani R 1990.pdf@*In this paper we review the radiative r0ecombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated 0density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from0 inelastic excitonic scattering, and electron-hole plasma recombination. Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier d0ensities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon 1;[?n/Levine, H. //Libby, S. B. //Pruisken, A. M. M. /`=XxlԫVSchlumberger Doll Res/Ridgefield//Ct/06877 ; Brown Univ,Dept Phys/Providence//Ri/02912V$M_TD@_< 22ch 16 ^N~bd54klyn Coll,Dept Phys/Brooklyn//Ny/11210 ; Chinese Acad Sci,Inst Semicond/Beijing//Peoples R China ; Natl Res Council Canada,Div Phys/Ottawa K1a ; Cuny Grad Sch & Univ Ctr/New York//Ny/100364=tmPhotoreflectance Study of Narrow-Well Strained-Layer InxGa1-xAs/GaAs Coupled Multiple-Quantum-Well Structuresm=t04.2.24=t "Physical Review B-Condensed Matter"=t Article$M_ԙ@_̙ 1988 Aug 15 $M_ԙ@_4̙38$M_ԙ@_̙5$M_ԙ@_̙ 3375-3382 $M_ԙ@_̙%>\\As01mesant\Procite Databases\WCS\Articles\P4an SH 1988 08.pdf,$M_ԙ@_̙$M_ԙ@_̙+156$M_ԙ@_̙359905j.=@9/Saihalasz, G. A. //Esaki, L. //Harrison, W. A. /@/=`p̬iIbm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Stanford Univ,Dept Appl Phys/Sta5nford//Ca/94305i@/=`p̬RInAs-GaSb Superlattice Energy Structure and Its Semiconductor-Semimetal TransitionR@/=`p̬04.2.25`=`p̬`=`p̬ "Physical Review B-Condensed Matter"@/=`p̬ Article$M_ą@_P 1976;1? Parayanthal, P. //Pollak, F. H.  =nt,/Cuny Brooklyn Coll,Dept Phys/Brooklyn//Ny/11210/=nt,FRaman-Scatterin.^N~ 5`=`p̬`=`p̬ "Physical Review B-Condensed Matter"@/=`p̬ Article$M_ą@_P 19758 Sep 15 $M_ą@_P18$M_ą@_P6$M_ą@_P 2812-2818 $M_ą@_P115$M_ą@_P%D\\As01mesant\Procite Databases\WCS\Articles\Saihalasz GA 1978 09.pdfD$M_ą@_P+180$M_ą@_P1461056;@ Parayanthal, P. //Pollak, F. H.  =nt,/Cuny Brooklyn Coll,Dept Phys/Brooklyn//Ny/11210/=nt,FRaman-Scatterin6g in Alloy Semiconductors: "Spatial Correlation" ModelF=nt,05.1.3=nt,=nt, Physical Review6 Letters=nt, Article:$M_CE@_Exx: 1984 May 14 :$M_CE@_Exx:52:$M_CE@_Exx:620:$M_CE@_Exx: 1822-1825 :$M_CE@_Exx:%E\\As01mesant\Procite Databases\WCS\Articles\Parayanthal P 1984 05.pdfE:$M_CE@_Ex6?x:+174:$M_CE@_Exx:360007aAs: Concept and Device Application>=hq06.3.3=hq Journal of Crystal Growth=hq Artic7aAs: Concept and Device Application>=hq06.3.3=hq Journal of Crystal Growth=hq Artic(X~ N7;@ Ploog, K.  =hq9Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed9=hq>Delta-Doping in MBE-Grown G7aAs: Concept and Device Application>=hq06.3.3=hq Journal of Crystal Growth=hq Artic7le$M_l\@_T>l1987 Feb$M_l\@_T>l81$M_l\@_T>l1-4$M_l\@_T>l304-3137$M_l\@_T>l%<\\As01mesant\Procite Databases\WCS\Articles/Plogg K 1987.pdf<=hq+142$M_l\@_T>l360208;@Pollak, F. H. 8:=t'@/Cuny Brooklyn Coll,Dept Phys/Brooklyn//Ny/11210/8:=t'@MEffects of Homogeneous Strain on 8the Electronic and Levels in SemiconductorsM8:=t'@01.3.3 Electron Bandgaps8:=t'@ Semiconductors and Semimetals8:8=t'@ Article"$M_/""@_""1990"$M_/""@_""32"$M_/""@_""17-53"$M_/""8@_""%?\\As01mesant\Procite Databases\WCS\Articles\Pollack FH 1990.pdf,"$M_/""@_"""$M_/""@_""+161"$M_/""@_"8"360309;[? Price, P. J.  =t@7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=t@(Electron-Transport in PolanH~ T9;@ Price, P. J.  =t@7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=t@(Electron-Transport in Pola9r Heterolayers(=t@02.3.2=t@ Surface Science=t@ Article6"@_?"A"@_9A"6"19826"@_?"A"@_A"6"1136"@_?"A"@_A"6"1-36"@_?"A"@_A"6"199-2106"@_?"A"@_A"6"9%=\\As01mesant\Procite Databases\WCS\Articles\Price PJ 1982.pdf,6"@_?"A"@_A"6"6"@_?"A"@_A"6"+1266"@_?"A"@_A"6"36070:;@ Price, P. J.  +=+u 7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987+=+u >Two-Dimensional Electron-T:ransport in Semiconductor Screening>+=+u 02.3.3+=+u  &Journal of Vacuum Science & Technology&+=+u : Article $M_TD@_< T 19813=+u 19 $M_TD@_< T 3 $M_TD@_< T 599-6:03 $M_TD@_< T %=\\As01mesant\Procite Databases\WCS\Articles/Price PJ 1981.pdf=3=+u +123 $M_TD@_< T 36080:;;[?Pruisken, A. M. M. h(=hwԫ*Columbia Univ,Dept Phys/New York//Ny/10027*h(=hwԫ;Universal Singularities in the In =hwԫ+132$M_@_J36100hM~1t*;;@Pruisken, A. M. M. h(=hwԫ*Columbia Univ,Dept Phys/New York//Ny/10027*h(=hwԫ;Universal Singularities in the In;tegral Quantum Hall-Effect;h(=hwԫ02.5.3h(=hwԫ Physical Review Lettersh(=hwԫ Article;$M_@_J 1988 Sep 12 =hwԫ =hwԫ61$M_@_J11$M_;@_J 1297-1300 $M_@_J%D\\As01mesant\Procite Databases\WCS\Articles\Pruisken AMM 1988 09.pdf,@/hH9X;XF; =h;mwԫ =hwԫ+132$M_@_J36100< should find applications In flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing.Ў$M_َێ@_ێUЎ<semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light. Light-emitting diodes based on these materials<semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light. Light-emitting diodes based on these materials<semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light. Light-emitting diodes based on these materials<semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light. Light-emitting diodes based on these materials3cN~ ?rospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile enviro?nments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The lat? est progress in development of AlGaN UV detectors is finally described in detail. (C) 1996 American Institute of Physics.$M_\L@_D\+131$M_\L@_D? \,Chemical Vapor-Deposition/ N-Junction Diodes/ Quantum Schottky Diodes/ Silicon Photodiodes/ Gallium Nitride/ Uv Photodiodes/ GaN/ Stability/ Barrier$M_\L@_D\? 36150@j.=@93Farrell, H. H. //Harbison, J. P. //Peterson, L. D. 3,=Ht:dX"Bell Commun Res/Red Bank//Nj/07701",=Ht:dX>Molecular@-Beam Epitaxy Growth Mechanisms on GaAs(100) Surfaces>,=Ht:dX06.2.3,=Ht:dX (Journal of Vacuum Science & Technology B(,@=Ht:dX ArticleE$M_ND@_<xbE 1987 Sept Oct,=Ht:dX,=Ht:dX5E$M_ND@@_<xbE5E$M_ND@_<xbE 1482-1489 E$M_ND@_<xbE%B\\As01mesant\Procite Databases\WCS\Articles\Farrell HH 1987 09.pdfBE$M_ND@K@_<xbE+151E$M_ND@_<xbE14730Aj.==?dfYablonovitch, E. //Gmitter, T. J. //Meade, R. D. //Rappe, A. M. //Brommer, K. D. //Joannopoulos, J. D.f=@zN2ԫ[Bell Commun Res Inc,Navesink Res Ct/_N~l5>rd May 16, 1994 $M_tPQ@_Qrd72$M_tPQ@_Qrd20$M_tPQ@_Qrd 3194-3197 $M_tPQ@_Qr>d%@\\As01mesant\Procite Databases\WCS\Articles\Ratsch C 1994 05.pdf@$M_tPQ@_Qrd*The aggregation or adatoms into 2D islands is studied as a function of coverage THETA> and the ratio of surface diffusion rate to deposition rate R = D/F by Monte Carlo simulations or a model of epitaxial growth that permits atoms to detach from island edges at a rate determined by a p>air bond energy E(N). The total island density is observed to saturate before coalescence becomes important. In this regime, the density or adatoms N1 is similar to THETA(-r)R(-omega) while the densit>y of islands composed of s > 1 atoms N(s) is similar to THETA[s]-2g(s/[s]) where the average island size [s] is similar to THETAR(chi). The exponents r, omega, and chi vary smoothly with E(N).>$M_tPQ@_Qrd+134$M_tPQ@_Qrd,Energy Electron-Diffraction/ Molecular-Beam Epitaxy/ Gaas(001)/ Step-Density/ Thin-Films/ Growth/ Nucleation/ Diffusion> =/ Kinetics$M_tPQ@_Qrd36130?$M_\L@_D\ May 15, 1996 $M_\L@_D\79$M_\L@_D\10$M_\L@_D\ 7433-7473 ?$M_\L@_D\ May 15, 1996 $M_\L@_D\79$M_\L@_D\10$M_\L@_D\ 7433-7473 ?$M_\L@_D\ May 15, 1996 $M_\L@_D\79$M_\L@_D\10$M_\L@_D\ 7433-7473 3N~2?;@6Razeghi, M. //Rogalski, A. k= r,ԫ8Northwestern Univ,Dept Elect Engn & Comp Sci,Ctr Quantum8k= r,ԫ#Semiconduct?or Ultraviolet Detectors#k= r,ԫ11.3.5k= r,ԫ Journal of Applied Physicsk= r,ԫ Review?$M_\L@_D\ May 15, 1996 $M_\L@_D\79$M_\L@_D\10$M_\L@_D\ 7433-7473 ?$M_\L@_D\%A\\As01mesant\Procite Databases\WCS\Articles\Razeghi M 1996 05.pdfA/= r,ԫ*In this review article a comprehensive analysis of the deve?lopments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considera?tions are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Ne?xt, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the ae?rospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile enviro@j.=1?93Farrell, H. H. //Harbison, J. P. //Peterson, L. D. 3,=Ht:dX"Bell Commun Res/Red Bank//Nj/07701",=Ht:dX>Molecularf=@zN2ԫ[Bell Commun Res Inc,Navesink Res Ctesink Res Ct^N~Aj.=@dfYablonovitch, E. //Gmitter, T. J. //Meade, R. D. //Rappe, A. M. //Brommer, K. D. //Joannopoulos, J. D.f=@zN2ԫ[Bell Commun Res Inc,Navesink Res CtAr/Red Bank//Nj/07701 ; Mit,Dept Phys/Cambridge//Ma/02139[=@zN2ԫ3Donor and Acceptor Modes in Photonic Band-Structure3=@zN2ԫ05.3.2A=@zN2ԫ Physical Review Letters=@zN2ԫ Articlew$M_TD@_<.Tw 1991 Dec 9 w$M_TD@_<A.Tw67w$M_TD@_<.Tw24w$M_TD@_<.Tw 3380-3383 w$M_TD@_<.Tw%F\\As01mesant\Procite Databases\WCS\Articles\YabAlonovitch E 1991 12.pdf,@/hH9XXF =@zN2ԫ=@zN2ԫ*Three-dimensionally periodic dielectric structures, photAonic crystals, possessing a forbidden gap for electromagnetic wave propagation, a photonic band gap, are now known. If the perfect 3D periodicity is broken by a local defect, local electromagnetic modAes can occur within the forbidden band gap. Addition of extra dielectric material locally, inside the photonic crystal, produces "donor" modes. Conversely, removal of dielectric material from the crysAtal produces "acceptor" modes. It is now possible to make high-Q electromagnetic cavities of approximately 1 cubic wavelength, for short wavelengths at which metallic cavities are useless. These new dB;=?rTucker, R. S. //Pope, D. J. j=@bs<H;Univ Queensland,Dept Elect Engn/St Lucia/Qld 4067/Australia;j=@bs<H]Circuitf=vԫYIn-Plane-Gated Quant^N~ Aes can occur within the forbidden band gap. Addition of extra dielectric material locally, inside the photonic crystal, produces "donor" modes. Conversely, removal of dielectric material from the crysAtal produces "acceptor" modes. It is now possible to make high-Q electromagnetic cavities of approximately 1 cubic wavelength, for short wavelengths at which metallic cavities are useless. These new dAielectric cavities can cover the range from mm waves to uv wavelengths.w$M_TD@_<.Tw+219w$M_TD@_<.Tw, Lasers/ Gap w$M_TD@_A <.Tw6500B;@rTucker, R. S. //Pope, D. J. j=@bs<H;Univ Queensland,Dept Elect Engn/St Lucia/Qld 4067/Australia;j=@bs<H]CircuitB Modeling of the Effect of Diffusion on Damping in a Narrow-Stripe Semiconductor-Laser]j=@bs<H10.2.5j=@bs<H #IEEE Journal of QuantuBm Electronics#j=@bs<H ArticleQ$M_DZ4\@_,\GDQ1983Q$M_DZ4\@_,\GDQ19Q$M_DZ4\@_,\GDQ7BQ$M_DZ4\@_,\GDQ 1179-1183 Q$M_DZ4\@_,\GDQ%A\\As01mesant\Procite Databases\WCS\Articles/Tucker RS 1983 07.pdfAQ$M_DZ4\@_,\GDQB8+121Q$M_DZ4\@_,\GDQ36210Cum Wire Transistor Fabricated With Directly Written Focused Ion-BeamsYf=vԫ09.1.7f=vԫ Applied Physics LettersfCum Wire Transistor Fabricated With Directly Written Focused Ion-BeamsYf=vԫ09.1.7f=vԫ Applied Physics Lettersfhysics(HHB ;k~C;@Wieck, A. D. //Ploog, K. f=vԫ1Max Planck Inst Festkorperforsch/W-7000 Stuttgart1f=vԫYIn-Plane-Gated QuantCum Wire Transistor Fabricated With Directly Written Focused Ion-BeamsYf=vԫ09.1.7f=vԫ Applied Physics LettersfC=vԫ Article$M_\L@_D\ 1990 Mar 5 $M_\L@_D\56$M_\L@_D\10$M_\LC@_D\928-930$M_\L@_D\%@\\As01mesant\Procite Databases\WCS\Articles\Wieck AD 1990 03.pdf,XhH9XCXFC=vCEԫ+111$M_\L@_D\36230D;@Ridley, B. K. HHB5Univ Essex,Dept Phys/Colchester Co4 3sq/Essex/England5HHB.Lucky-Drift Mechanism for IDmpact Ionization in.HHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE (Journal of Physics C-Solid State Physics(HHBD ArticleHHB June 20, 1983 HHB16HHB17HHBD 3373-3388 HHB%A\\As01mesant\Procite Databases\WCS\Articles/Ridley BK 1983 10.pdfAHHB*A simple analytic expreE;1?XSapriel, J. //Michel, J. C. //Toledano, J. C. //Vacher, R. //Kervarec, J. //Regreny, A. XpM=(r`dlCtr Natl Etud Telecommun,Cnrs,Lab 250,196 Rue Par ;kN~2|5D 3373-3388 HHB%A\\As01mesant\Procite Databases\WCS\Articles/Ridley BK 1983 10.pdfAHHB*A simple analytic expreDssion for the ionisation coefficient for impact ionisation is derived on the basis of a new approach which exploits the difference between momentum- and energy-relaxation rates for hot electrons. The Dbasic mechanism whereby an electron gains sufficient energy to ionise is lucky to drift in which the electrons relax momentum but not energy. The electrons gain energy by drift and not by ballistic moDtion, and a few lucky ones reach the threshold. Those which thermalise may also contribute through the lucky-drift mechanism, starting from the average hot-electron energy. Good agreement with Baraff'Ds theory is obtained. It is shown that neither the Schockley lucky electron nor the Wolff thermalised electron contribute significantly, in agreement with Baraff. However, the concept of Schockley's lDucky electron is an essential part of the lucky-drift mechanism. The theory is simply extended to accommodate electrons injected at energies above zero, and some calculations are presented on this topD ic. A discussion is given of the effect of real band structure and it is concluded that the theory based on parabolic bands remains good provided the mean free path is taken as an average quantity oveEis/F-92220 ; Univ Montpellier 2,Lab Spectrometrie Rayleigh ; Ctr Natl Etud Telecommun/Paris//FrancepM=(r`dl[Light-Scattering From Vibrational Modes in GaAs-Ga1-xAlxEAs Superlattices and Related Alloys!pM=(r`dlpM=(r`dlpM=(r`dlpM=(r`dl&Bellcore Commun Res/Red Bank//Nj/07701&9=Zu,^^N~Hn in a Quantum Dot: Significance of Multiphonon ProcessesK0/=v03.5.4x=v "Physical Review B-Condensed Matter"0/H=v ArticleH$M_QS@_SH 1992 Sep 15 H$M_QS@_SH46H$M_QS@_SH11H$M_QSH@_SH 7260-7263 H$M_QS@_SH%B\\As01mesant\Procite Databases\WCS\Articles\Inoshita T 1992 09.pdf,H$M_QS@_SHH$M_QSH@_SH*Electron relaxation in a GaAs quantum dot is investigated to second order in electron-phonon interactions. Calculation of relaxation rate, as a function of level separation, indicHates the significant contribution of LO +/- LA processes, which create a window of rapid (subnanosecond) relaxation around the longitudinal-optical phonon energy. This result may provide a possible soHlution to the problem of photoluminescence degradation in small quantum dots.H$M_QS@_SH+131H$M_QS@_SH,PhononsH$M_QSIne Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular-Beam Epitaxyx7=qz5Weingarten, K. J. //Rodwell, M. J. W. //Bloom, D. M. 5i=HYpE1Stanford Univ,Edward L Ginzton Lab,Ww Hansen Labs1i=HYpEG7Picosecond Optical-Sampling of GaAs Integrated-Circuits7i=HYpE11.4.1i=HYpEi=HYpE #IEEE JoGurnal of Quantum Electronics#i=HYpE Article$M_  @_ 1988$M_  @_ 24$M_  @_G 2$M_  @_ 198-220$M_  @_ %B\\As01mesant\Procite Databases\WCS\Articles/Weingarten KJ 1988.pdfB$M_  GF@_ +141$M_  @_ 36670H;@$Inoshita, T. //Sakaki, H. 0/=v2Res Dev Corp Japan,Quantum Wave Project,4-3-24-30220/=vKElectron RelaxatioI;1?&Sakaki, H. //Tanaka, M. //Yoshino, J. &x7=qz<7Univ Tokyo,Inst Ind Sci,7-22-1 Roppongi,Minato Ku/Tokyo7x7=qz<OIne Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular-Beam Epitaxyx7=qz@_>>3 3917-3923 3$M_<>@_>>3%<\\Aeron\Procite Databases\WCS\Articles\Broido DA 1986 09.pdf'3$M_<>@_>>3O63$M_<>@_>>3 3917-3923 3$M_<>@_>>3%<\\Aeron\Procite Databases\WCS\Articles\Broido DA 1986 09.pdf'3$M_<>@_>>3O63$M_<>@_>>3 3917-3923 3$M_<>@_>>3%<\\Aeron\Procite Databases\WCS\Articles\Broido DA 1986 09.pdf'3$M_<>@_>>3O63$M_<>@_>>3 3917-3923 3$M_<>@_>>3%<\\Aeron\Procite Databases\WCS\Articles\Broido DA 1986 09.pdf'3$M_<>@_>>3!QAqP ܒ+111$M_ܛ̝@_ĝf<ܒ,Confinement/ Si(100)/ Ge$M_ܛ̝@_ĝf<ܒ14940Q;@/Eppenga, R. //Schuurmans, M. F. H. //Colak, S. //=s:Philips Res Labs,Pob 80-000/5600 Ja Eindhoven//Netherlands:/=sQ5New K.p Theory for GaAs/Ga1-xAlxAs-Type Quantum-Wells5/=s03.1.5P=s "Physical Review B-Condensed Matter"Q/=s Article$M_@_ 1987 Jul 15 $M_@_36$M_@_3$M_Q@_ 1554-1564 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles\Eppenga R 1987 07.pdf,$M_@_$M_QN@_+157$M_@_38160Rters=orC Article*$M_35@_5X* 1991 Sep 16 *$M_35@_5X*67*$M_35@_5X*12Rters=orC Article*$M_35@_5X* 1991 Sep 16 *$M_35@_5X*67*$M_35@_5X*12Rters=orC Article*$M_35@_5X* 1991 Sep 16 *$M_35@_5X*67*$M_35@_5X*12_5X*%;\\Aeron\Procite Databases\WCS\Articles\Gammon D 1991 09.pdf'*$M_35@_5X*R*$M_35@_5X**We report photoluminescence and resonant-Raman-scattering studies of single GaAs/AlAs quantum-well structures. Splittings in the exciton peaks show that there is a l,6f25 P̝@_ĝf<ܒ 1994 Mar Apr^=Xv8X^=Xv8X12$M_ܛ̝@_ĝf<ܒ2$M_ܛ̝@_ĝf<P 1063-1066^=Xv8X^=Xv8X%D\\As01mesant\Procite Databases\WCS\Articles/Leonard D 1994 03 04.pdfD$M_ܛ̝@_ĝf<Pܒ*The two- (2D) to three-dimensional (3D) growth mode transition during the initial stages of growth of highly strained InGa1-xAs on GaAs is used to obtain quantum dot structures. Transmission ePlectron micrographs (TEM) reveal that when the growth of InxGa1-xAs is interrupted exactly at the onset of this 2D-3D transition, dislocation-free islands (dots) of InGaAs result. Size distribution mePasurements from TEM images indicate that these dots are less than 300 angstrom in diameter and remarkably uniform. A phase diagram is constructed, showing the growth conditions under which these straiPned coherent uniform dots form. Photoluminescence from layers containing these dots is observed and correlated with growth conditions and with structural data obtained from TEM images. We observe thatP the photoluminescence emitted from the dots and an underlying reference quantum well are nearly equal, indicating a high quantum efficiency for these quantum dots.$M_ܛ̝@_ĝfh1?BMartin, G.M.//Farges, J.P.//Jacob, G.//Hallais, J.P.//Poiblaud, G.HFHFHFHFHFHFHFUHFHFHFHFHFUHFCompensation Mechanisms in GaAsHF01.5.3 Metastable Centers: EL2HF Journal of AEL2HF Journal of A^-]N~2,5UR>@BMartin, G.M.//Farges, J.P.//Jacob, G.//Hallais, J.P.//Poiblaud, G.HFHFHFUHFHFHFHFHFUHFHFHFHFHFHFUHFHFHFHFHFUHFHFHFHFHFUHFCompensation Mechanisms in GaAsHF01.5.3 Metastable Centers: EL2HF Journal of AUpplied PhysicsHF1980HF51HF5HF 2840-28U52 HF%A\\As01mesant\Procite Databases\WCS\Articles\Martin GM 1980 05.pdfAHF' 0021-8979 HFV;1?Lu, Y. T. //Sham, L. J. =Pt7Univ Calif San Diego,Dept Phys,B-019/La Jolla//Ca/920937=Pt3Valley-Mixing Ealif San Diego,Dept Phys/La Jolla//Ca/92093 ; Inst Nacl Pesquisa,Espanciais/Br-12201 S ^N~5LX$M_,=d>@_\>zJ| 1192-1203 $M_,=d>@_\>zJ|%>\\As01mesant\Procite Databases\WCS\Articles/Polder 1979 03.pdf>+166$M_,=d>@_\>zXJ|38390Y<@Cardona, M.//Ley, L./=0VqXAMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep GerA/=0VqX>PhotoemisYsion in Solids-I: General Principles .1. Introduction>/=0VqX05.1.1/=0VqX Topics in Applied Physics/=0VqYX Miscellaneous >$M_4G$I@_IR54>1978>$M_4G$I@_IR54>26>$M_4G$I@_IR54>1-104>$M_4G$I@_IRY54>444(1)>$M_4G$I@_IR54>%9\\As01mesant\Procite Databases\WCS\Articles/Cardona M.pdf9>$M_4G$I@_IR54>+176>$M_4G$I@_IR54>Y 60910ZEEE Photonics Technology Letters! Article199139784-786%9\\Aeron\Procite Databases\WCS\Articles/Rideout W 1991.pdf9*The reported wide variations in the damping behavior oZEEE Photonics Technology Letters! Article199139784-786%9\\Aeron\Procite Databases\WCS\Articles/Rideout W 1991.pdf9*The reported wide variations in the damping behavior oers due to a nonzero capture time recently measured in quantum well amplifiers. In analogy with spectral hole burning, this spatial hole perpendicular to the active region acts under certaZin circumstances like an additional photon-dependent gain suppression (1 - epsilon-S), with epsilon = tau-cap dg / dn upsilon-g n(eq)2 where tau-cap is the effective capture time and eta-eq is the equarrier/convJ6f55W;@,Maialle, M. Z. //Silva, = Eade//Sham, L. J. , =p~HԫqUniv Calif San Diego,Dept Phys/La Jolla//Ca/92093 ; Inst Nacl Pesquisa,Espanciais/Br-12201 S WJose Campo/Sp/Brazilq =p~Hԫ&Exciton Spin Dynamics in Quantum-Wells& =p~Hԫ03.2.2 =p~Hԫ "PhysicaWl Review B-Condensed Matter" =p~Hԫ Article$M_@_|G\ 1993 Jun 15 =p~Hԫ47$M_W@_|G\23$M_@_|G\ 15776-15788 $M_@_|G\%B\\As01mesant\Procite Databases\WCS\Articles\Maialle MZ 1993 06.pdf,@/hWH9XWXFW-=p~Hԫ*XA theory of exciton spin dynamics is given in terms of the exchange spin-flip mechanism taking full account of the confinement of theW quantum well. Exciton spin relaxation belongs to the motional narrowing class, with a characteristic inverse proportionality to the momentum scattering time of the exciton center of mass. Analysis ofW the time dependence of optical intensities of both circular polarizations, including competing relaxation mechanisms from exciton exchange and from single-particle spin flip into optically inactive sX;1?5Polder, D. //Schuurmans, M. F. H. //Vrehen, Q. H. F. 5=]w'Philips Res Labs/Eindhoven//Netherlands'=]wkSuXperfluorescence: Quantum-Mechanical Derivation of Maxwell-Bloch Description With Fluctuating Field Sourcek=]w05.2.2=]w PhyX>Photoemis03.3.4 !Iq^N~u<TZ;@2KRideout, W. //Sharfin, W. F. //Koteles, E. S. //Vassell, M. O. //Elman, B. KGte Labs Inc/Waltham//Ma/022540Well-Barrier Hole Burning in Quantum-Well Lasers003.3.4 !IZEEE Photonics Technology Letters! Article199139784-786%>\\As01mesant\Procite Databases\WCS\Articles/Rideout W 1991.pdf>*The reported wide variations in the damping behavZior of quantum well lasers are explained by a novel theory of nonlinear gain, well-barrier hole burning. It is shown that with increasing photon density, carriers build up in the higher bandgap barrieZr/confinement layers due to a nonzero capture time recently measured in quantum well amplifiers. In analogy with spectral hole burning, this spatial hole perpendicular to the active region acts under Zcertain circumstances like an additional photon-dependent gain suppression (1 - epsilon-S), with epsilon = tau-cap dg / dn upsilon-g n(eq)2 where tau-cap is the effective capture time and eta-eq is thZe equilibrium ratio between the number of carriers in the barriers and those in the wells. This additional damping is shown to be consistent with anomalously high damping rates found in some quantum wZell lasers. Design considerations to reduce this additional damping term are discussed.+134,Modulation Bandwidth38450[tastable Centers: EL2=pt=@ Electronics Letters=pt=@1977Y9@_|b9ld9@_dd9G|Y913Y9@_|b9ld9[tastable Centers: EL2=pt=@ Electronics Letters=pt=@1977Y9@_|b9ld9@_dd9G|Y913Y9@_|b9ld9uqu@_dd9G|Y9Y9@_|b9ld9@_dd9G|Y9' 0013-5194 Y9@_|b9ld9@_dd9G|Y9)Times Cited:219 Bibliography:10 ENGLISH LAB ELECTR & PHYS APPL, F-94450 LIMEIL BREVANNES, FRANK{N~mL\[ﹿ>@'Mitonneau, A.//Martin, G.M.//Mircea, A.'=pt=@.Hole Traps in Bulk and Epitaxial GaAs Crystals.=pt=@01.5.3 Me[tastable Centers: EL2=pt=@ Electronics Letters=pt=@1977Y9@_|b9ld9@_dd9G|Y913Y9@_|b9ld9[@_dd9G|Y922Y9@_|b9ld9@_dd9G|Y9666-668Y9@_|b9ld9@_dd9G|Y9%A\\As01mesant\Procite Databases\WCS\Articles\Mitonneau 1977 10.pdf,Y9@_|b9l[d9@_dd9G|Y9Y9@_|b9ld9@_dd9G|Y9' 0013-5194 Y9@_|b9ld9@_dd9G|Y9)Times Cited:219 Bibliography:10 ENGLISH LAB ELECTR & PHYS APPL, F-94450 LIMEIL BREVANNES,[ FRANCE, DZ441 Copyright 2003 SciSearch PlusY9@_|b9ld9@_dd9G|Y9+219Y9@_|b9ld9@_dd9G|Y965240\M<@Malloy, K. J.//Khachaturyan, K. =pt,@Univ New Mexico,Ctr High Technol Mat/Albuquerque//Nm/87131 ; Univ New Mexico,Dept Elect & Comp Engn/Albuqu\erque//Nm/87131 ; Los Alamos Natl Lab,Ctr Mat Sci/Los Alamos//Nm/87545 =pt,@(DX and Related Defects in Semiconductors( =pt,@01.5\.2 Metastable Centers: DX =pt,@ Semiconductors and Semimetals =pt,@ Review9@_\9L9@_D9:\91993];[?Schmittrink, S. //Ell, C. =t@:Univ Frankfurt,Inst Theoret Phys,Robert Mayer Str 8/D-6000:=t@@Excitons atoconductivity/ Ga1-Xalxas Alloys/ Compound Semiconductors\29@_\9L9@_D9:\962130#SN~ T*\.2 Metastable Centers: DX =pt,@ Semiconductors and Semimetals =pt,@ Review9@_\9L9@_D9:\91993\9@_\9L9@_D9:\9389@_\9L9@_D9:\9235-2919@_\9L9@_D9:\91959@_\9L9@_D9:\9%>\\As01mesant\Procite Da\tabases\WCS\Articles\Malloy KJ 1993.pdf,9@_\9L9@_D9:\99@_\9L9@_D9:\9+359@_\9L9@_D9:\9,Si-Doped Alxga1-Xas/ Level Transien\t Spectroscopy/ Large-Lattice-Relaxation/ Molecular-Beam Epitaxy/ Electron-Paramagnetic-Resonance/ Vapor-Phase Epitaxy/ Deep-Level/ Persistent Photoconductivity/ Ga1-Xalxas Alloys/ Compound Semiconduc\7tors9@_\9L9@_D9:\962130];@Schmittrink, S. //Ell, C. =t@:Univ Frankfurt,Inst Theoret Phys,Robert Mayer Str 8/D-6000:=t@@Excitons a]nd Electron-Hole Plasma in Quasi-2-Dimensional Systems@=t@02.4.4=t@ Journal of Luminescence=t]@ ArticleX"@_|a"lc"@_dc"|X"1985X"@_|a"lc"@_dc"|X"30X"@_|a"lc"@_dc"|X"1-4X"@_|a"lc"@_dc"|X"]585-596X"@_|a"lc"@_dc"|X"%A\\As01mesant\Procite Databases\WCS\Articles\Schmitt-Rink 1985.pdf,X"@_|a"lc"@_dc"|X"X"@_|a"lc"@_dc"|X"+104]2X"@_|a"lc"@_dc"|X"38530^;1?Schubert, E. F. =(Zu4Ȓ/At&T Bell Labs,600 Mt Ave/Murray Hill//Nj/07974/=(Zu4ȒGDelta Doping of III-V-Compound -]N~ *l`;@ҖYSeaton, C. T. //Valera, J. D. //Shoemaker, R. L. //Stegeman, G. I. //Chilwell, Smith S.D.Y=rUniv Arizona,Ctr Opt Sci/Tucson//Az/85721 ; Univ` Arizona,Arizona Res Labs/Tucson//Az/85721 ; Heriot Watt Univ,Dept Phys/Edinburgh Eh1=rSCalculations of Nonlinear Te Waves Guided by Thin Films Bounded by Nonl`inear MediaS=r05.2.6=r #IEEE Journal of Quantum Electronics#=r1985$`M_@_j21$M_@_j7$M_@_j774-783$M_@_j%>\\As01mesant\Procite Databases\WC`~S\Articles/Seaton CT 1985.pdf>$M_@_j+136$M_@_j38610a;@,Sercel, P. C. //Vahala, K. J. =|vR3Caltech,Thomas J Watson Sr Labs Appl Phys,Dept Appl3=|vRAnalytical Foarmalism for Determining Quantum-Wire and Quantum-Dot Band Structure in the Multiband Envelope-Function ApproximationFX=|vRX=|vR$aX=|vRX=|vRX=|vR03.5.1X=|vR "Physical Review B-Condensed Matter"a=|vR Article$M_01@_1_| 1990 Aug 15 $M_01@_1_|42$M_01@_1_|6a$M_01@_1_| 3690-3710 $M_01@_1_|%A\\As01mesant\Procite Databases\WCS\Articles\Sercel PC 1990 08.pdfA$M_01@_1_|+119DtN~dta,$M_01@_1_|38700b<@ Ettenberg, M. x*=p^3Multi-layer reflector for electroluminescent device3x*=p^05.3x*=bp^466175x*=p^ US4092659 x*=p^USx*=p^ 5/30/1978 x*=pb^ US4092659 x*=p^US3701047 US3849738 US4001719x*=p^"US4317086 US4331938 US4731792 US4805176 US4839901 US4894833b US4383320 US4385389 US4594719 US4599729 US5056099 US5068866 US5940424 US5960021 US4358851 US4359774 US4510607 US4523316 US4393504 US4416011 US4642143 US4660207 US4675873 US4730331 US4429395 US4461008b US4280107 US4297651 US4547396 US4569054 US4581742 US4589115 US4612211 US4641311 US4914668 US4947223 US4951291 US4952019 US5224113 US5623509 USH101x*=p^%;\\As01mesabnt\Procite Databases\WCS\Patents\US04092659__.pdf;x*=p^'H01S 33/0; H01S 3/0x*=p^+41x*=p^6b90c3 Metastable Centers: EL2h3=pt,@ Electronics Lettersh3=pt,@1977W9@_L`9@'Martin, G.M.//Mitonneau, A.//Mircea, A.'h3=pt,@2Electron Traps in Bulk and Epitaxial GaAs Crystals2h3=pt,@01.5.c3 Metastable Centers: EL2h3=pt,@ Electronics Lettersh3=pt,@1977W9@_L`9\\As01mesant\Procite Databases\WCS\Articles\Martin GM 1977.pdf,W9@_L`9@\Huber, A.M.//Linh, N.T.//Valladon, M.//Debrun, J.L.//Martin, G.M.//Mitonneau, A.//Mircea, A.#HFHFHhFHFHFHFHFHFhHFHFHFHFHFhHFHFHFHFHFi;1?Yang, S. R. E. //Sham, L. J. P?=ol91Univ Calif San Diego,Dept Phys/La Jolla//Ca/920931P?=ol9*Theory of Magnet&VN~k=t Article$M_dT@_Ld 1985 Feb 15 $M_dT@_Ld31$M_dT@_Ld4$M_dTk@_Ld 2080-2091 $M_dT@_Ld25$M_dT@_Ld%A\\As01mesant\Procite Databases\WCS\Articles\Colvard C 1985 02.pdfA$M_dkOT@_Ld+338$M_dT@_Ld11320ly;@B,9Colvard, C. //Merlin, R. //Klein, M. V. //Gossard, A. C. 9/=8t Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Dept Phys/Urbana//Il/l61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Bell Tel Labs Inc/Murray Hill//Nj/07974/=8t GObservation of Folded Acoustic Phonons in a Semiconductorl Super-LatticeG/=8t 04.2.3=8t  Physical Review Letters/=8t  Article`$M_ilk@_kn` 1980 Jul 28 `$M_ik@_kn`45`$M_ik@_kn`4`$M_ik@_kn`298-301`$M_ik@l_kn`%A\\As01mesant\Procite Databases\WCS\Articles\Colvard C 1980 07.pdfA`$M_ik@_kn`+216`$M_ik@_kn`11330+Electrooptic mNon-Linear Fabry-Perot Devices+=8p$H11.4.2=8p$H=8p$H #IEEE Journal of Quantum Electronics#m=8p$H Article$M_ @_ V1978$M_ @_ V14$M_ @_ V3$M_EuK5jdia Natl Labs,Div Combust Chem/Livermore//Ca/94550H|J=Pn^WpA Mathematical-Model of the Coupled Fluid-Mechanics and Chemical-Kinetics in a Chemical Vapor-Deposition RejactorpH|J=Pn^W06.4.1H|J=Pn^W &Journal of the Electrochemical Society&H|J=Pn^W Article|$jM_@_(|1984|$M_@_(|131|$M_@_(|2|$M_@_(|425-434|$M_@j_(|%?\\As01mesant\Procite Databases\WCS\Articles/Coltrin ME 1984.pdf?|$M_@_(|+270|$M_@_(|11310ky;@8,`Colvard, C. //Gant, T. A. //Klein, M. V. //Merlin, R. //Fischer, R. //Morkoc, H.//Gossard, A. C.`X=tUniv Illinois,Mat Res Lab/Urbana//Il/6180k1 ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801X=tEFolded Acoukstic and Quantized Optic Phonons in (GaAl)As SuperlatticesEX=t04.2.3X=t "Physical Review B-Condensed Matter"Xk=t Article$M_dT@_Ld 1985 Feb 15 $M_dT@_Ld31$M_dT@_Ld4$M_dTly;1?B,9Colvard, C. //Merlin, R. //Klein, M. V. //Gossard, A. C. 9/=8t Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Dept Phys/Urbana//Il/216`$M_ik@_kn`11330@_kn`11330{Eu5~ '5m;@.Smith, P. W. //Turner, E. H. //Maloney, P. J. .=8p$H#Bell Tel Labs Inc/Holmdel//Nj/07733#=8p$H+Electrooptic mNon-Linear Fabry-Perot Devices+=8p$H11.4.2=8p$H=8p$H #IEEE Journal of Quantum Electronics#m=8p$H Article$M_ @_ V1978$M_ @_ V14$M_ @_ V3$M_m @_ V207-212$M_ @_ V%=\\As01mesant\Procite Databases\WCS\Articles/Smith PW 1978.pdf=$M_ @_ V+122$M_m  @_ V39050n;@ژSollner, T. C. L.m= 8u<#Mit,Lincoln Lab/Lexington//Ma/02173#m= 8u<NObservation of Intrinsic Bistability in Rensonant-Tunneling Structures: CommentNm= 8u<04.1.1.4m= 8u< Physical Review Lettersm= 8u< Artincle,$M_,@_$4) 1987 Oct 5 ,$M_,@_$4)59,$M_,@_$4)14,$M_,@_$4) 1622-1622n ,$M_,@_$4)%C\\As01mesant\Procite Databases\WCS\Articles\Sollner TCL 1987 10.pdfC,$M_,@_$4)+118,$M_,@_$4)391n30o;1?Smith, P. W. //Turner, E. H. @+-=ؽs<i0#Bell Tel Labs Inc/Holmdel//Nj/07733#@+-=ؽs<i0Bistable Fabry-Perot ResonatorFvN~l+5v_!,!1a-B!$M_!!@_!,!L8-L11!$M_!!@_!,!%@\\As01mesant\Procite Databases\WCS\Articles/Nakamura 1993 01.pdf@!$M_!!v@_!,!*P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes LEDs were fabricated successfully for the first time. The output power was 125 muW and the external quantvum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 vmeV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.!$M_!!@_!,!+112!$M_!!@_!,!,P-Gan/N-Ingan/N-Gan/ Douvble Heterostructure/ Output Power/ External Quantum Efficiency/ Blue Leds/ Blue Band-Edge Emission/ Ain Buffer Layer/ Growth/ Movpe!$M_!!@_!,!3670wical Review LettersU=xu> Article$M_@_4 1981 Mar 30 $M_@_446$M_@_wical Review LettersU=xu> Article$M_@_4 1981 Mar 30 $M_@_446$M_@_wical Review LettersU=xu> Article$M_@_4 1981 Mar 30 $M_@_446$M_@_{ N~S5p0.3.1(=؞r#(=؞r# #IEEE Journal of Quantum Electronics#(=؞r# Article$M_TD@_p<P)T1990 Jan$M_TD@_<P)T26$M_TD@_<P)T1$M_TD@_<P)T113-122$M_TD@_<P)Tp%B\\As01mesant\Procite Databases\WCS\Articles/Bennett BR 1990 01.pdfB$M_TD@_<P)T+133$M_TD@_<P)T39570q;@Yamamoto, Y. //Slusher, R. E. =PtStanford Univ/Stanford//Ca/94305 ; Nippon Telegraph & Tel Publ Corp,Basic Res Lab/Tokyo//Japan ; at&T Bell qLabs,Opt Phys Res Dept/Murray Hill//Nj/07974=Pt"Optical Processes in Microcavities"=Pt05.2.1=Ptq Physics Today =Pt Article$M_dT@_L*sdJun 1993$M_dT@_L*sd46$M_dT@q_L*sd6$M_dT@_L*sd66-73$M_dT@_L*sd%B\\As01mesant\Procite Databases\WCS\Articles/Yamamoto T 1993 06.pdfB$M_dTr;1?x+Sivan, U. //Solomon, P. M. //Shtrikman, H. +8(=HyTԫIbm Corp,Thomas J Watson Res Ctr,Pob 218/Yorktown ; Technion Israel Inst Technol,Inst Solid Srtate/Il-32000 ; Weizmann Inst Sci,Ctr Submicron/Il-76100 Rehovot//Israel8(=HyTԫCoupled Electron-Hole Transport8(=HyTԫ04.1.2 high enough to prevent tunneling and recombination while thin enough to allow for strong interlayer Coulomb interaction. Separate electrical contacts to each layer and in=m-]R5q@_L*sd+165$M_dT@_L*sd,7Spontaneous Emission/ Microscopic Cavity/ Laser/ Diodes7$M_dT@_L*sd39650r;@x+Sivan, U. //Solomon, P. M. //Shtrikman, H. +8(=HyTԫIbm Corp,Thomas J Watson Res Ctr,Pob 218/Yorktown ; Technion Israel Inst Technol,Inst Solid Srtate/Il-32000 ; Weizmann Inst Sci,Ctr Submicron/Il-76100 Rehovot//Israel8(=HyTԫCoupled Electron-Hole Transport8(=HyTԫ04.1.2r8(=HyTԫ Physical Review Letters8(=HyTԫ Article$M_ԽĿ@_4{Դ Feb 24, 1992 $M_ԽĿ@_r4{Դ68$M_ԽĿ@_4{Դ8$M_ԽĿ@_4{Դ 1196-1199 $M_ԽĿ@_4{Դ%?\\As01mesant\Procite Databases\WCS\Articles\Sivanr U 1992 02.pdf,@/hH9XrXFr=HyTԫ*We report on transport measurements in a novel system composed of two parallel 2D electron and hole gasres separated by a barrier which is high enough to prevent tunneling and recombination while thin enough to allow for strong interlayer Coulomb interaction. Separate electrical contacts to each layer as Photo-Voltaic Infrared Detectors 81=t@11.3.681=t@ Semiconductors and Semimetals81=t@ sArticleP"@_Y"["@_["P"1981P"@_Y"["@_["P"18P"@_Y"["@_["P"201-311P"@_Y"["@_["P"%8\\Aeron\leHFȞ1988HFȞ24HFȞHFȞ>n.^5ssant\Procite Databases\WCS\Articles\Reine MB 1981.pdf,P"@_Y"["@_["P"P"@_Y"["@_["P"+120P"@_Y"["@_["P"39930t;@+Smith, P. R. //Auston, D. H. //Nuss, M. C. +HF9At&T Bell Labs,Tech Staff Photon & Electr Res Dept/Murray9HFt-Subpicosecond Photoconducting Dipole Antennas-HF09.2.4HFHF #IEEE Journal of Quatntum Electronics#HF ArticleHFȞ1988HFȞ24HFȞt2HFȞ255-260HFȞ%=\\As01mesant\Procite Databases\WCS\Articles/Smith PR 1988.pdf=HFȞ+1t591HFȞ40120u_l<@_4B l1982$M_l<@_4B l45$M_l<@_4B l8$M_l<@_4B l815-885$M_l<@_4u_l<@_4B l1982$M_l<@_4B l45$M_l<@_4B l8$M_l<@_4B l815-885$M_l<@_4u_l<@_4B l1982$M_l<@_4B l45$M_l<@_4B l8$M_l<@_4B l815-885$M_l<@_4with large nonlinearities observed in InSb and GaAs as semiconductors constitute the most promising materials for applications. Current experimentauD4B l+184$M_l<@_4B l40170+184$M_l<@_4B l4017040170OBrl+u;@Abraham, E. //Smith, S. D.  =( r )Heriot Watt Univ,Dept Phys/Edinburgh Eh14) =( r 'Optical Bistability and Reulated Devices' =( r 11.4.2 =( r  Reports on Progress in Physics =( r  Review$Mu_l<@_4B l1982$M_l<@_4B l45$M_l<@_4B l8$M_l<@_4B l815-885$M_l<@_4uB l%>\\As01mesant\Procite Databases\WCS\Articles\Abraham E 1982.pdf,$M_l<@_4B l$M_l<@_4B l*2Gives a broad description of optical bistaubility: from practical applications, as an optical transistor or optical memory element, to its phase transition interpretation. The theory is divided into three parts. The first is a simple discussioun that covers most of the basic experimental effects and concepts of practical importance. The second part applies to atomic system where a semiclassical as well as a quantum-mechanical approach is pov0EP-Gan/N-Ingan/N-GaN Double-Heterostructure Blue-Light-Emitting DiodesE=Jp>5011.1.2=Jp>50 2Japanese Journal of Applied Pvhysics Part 2-Letters2=Jp>50 Article!$M_!!@_!,! Jan 15, 1993 !$M_!!@_!,! 32!$M_!!@v_!,!1a-B!$M_!!@_!,!L8-L11!$M_!!@_!,!%;\\Aeron\Procite Databases\WCS\Articles/Nakamura 1993 01.pdf;!$M_!!@_pe!$M_!!@_!,!3670^N~zj.=@6!Cardona, M. //Christensen, N. E. !h=umMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/z94304mh=uRAcoustic Deformation Potentials and Heterostructure Band Offsets in SemiconductorsRh=u02.1.1hz=uh=u "Physical Review B-Condensed Matter"h=u Articleb$M_km@_mpb 1987 Apr 15z b$M_km@_mpb35b$M_km@_mpb12b$M_km@_mpb 6182-6194 b$M_km@_mpb%A\\As01mesant\Proczite Databases\WCS\Articles\Cardona M 1987 04.pdfAb$M_km@_mpb+319b$M_km@_mpb6710{ES, FRANCE, GR273 Copyright 2003 SciSearch PlusY9$M_|b9ld9@_dd99|Y9+127Y9$M_|b9ld9@_dd99|Y965270CTR & PHYS APPL, 3 AVE DESCARTES, F-94450 LIMEIL BREVANN{ES, FRANCE, GR273 Copyright 2003 SciSearch PlusY9$M_|b9ld9@_dd99|Y9+127Y9$M_|b9ld9@_dd99|Y965270CTR & PHYS APPL, 3 AVE DESCARTES, F-94450 LIMEIL BREVANN{ES, FRANCE, GR273 Copyright 2003 SciSearch PlusY9$M_|b9ld9@_dd99|Y9+127Y9$M_|b9ld9@_dd99|Y965270CTR & PHYS APPL, 3 AVE DESCARTES, F-94450 LIMEIL BREVANN{ES, FRANCE, GR273 Copyright 2003 SciSearch PlusY9$M_|b9ld9@_dd99|Y9+127Y9$M_|b9ld9@_dd99|Y965270CTR & PHYS APPL, 3 AVE DESCARTES, F-94450 LIMEIL BREVANN{ES, FRANCE, GR273 Copyright 2003 SciSearch PlusY9$M_|b9ld9@_dd99|Y9+127Y9$M_|b9ld9@_dd99|Y965270N~N~ 5x ; Stanford Univ,Stanford Synchrotron Radiata=$wԫbPhotoemission Study of Au Schottky-Barrier Formation on GaAs, and InP Using Synchrotron Radiationbx=$wԫ02.2=$wԫ "Physical Review B-Condensed Matter"=$wԫ Article2$M_;=@_=2x Nov 15, 1978 p=$wԫ182$M_;=@_=2102$M_;=@_=2 5545-5559 2$M_;=@_=2%?\x\As01mesant\Procite Databases\WCS\Articles\Chye PW 1978 11.pdf?p=$wԫ+1792$M_;=@_=240270y;@X0Darcie, T. E. //Tucker, R. S. //Sullivan, G. J. 0`"=HVrr`cAt&T Bell Labs,Crawford Hill Lab/Holmdel//Nj/07733 ; Rockwell Int Corp,Microelectr Res Ctyr/Thousandc`"=HVrr`9Intermodulation and Harmonic Distortion in InGaAsP Lasers1`"=HVrr``"=HVrr``y"=HVrr`10.2.5`"=HVrr` Electronics Letters`"=HVrr` Articlej$M_\sLu@_Du6\j1985yj$M_\sLu@_Du6\j21j$M_\sLu@_Du6\j16j$M_\sLu@_Du6\j665-666j$M_\sLu@_Du6\j%A\\As01mesant\Procite Daytabases\WCS\Articles/Darcie TE 1985 08.pdfAj$M_\sLu@_Du6\j+102j$M_\sLu@_Du6\j40280zj.=y1?6!Cardona, M. //Christensen, N. E. !h=umMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed ; Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/e%~ 5{">@Mitonneau, A.//Mircea, A.=pt,@0Auger Deexcitation of a Metastable State in GaAs0=pt,@01.5.3 Metastable Cen{ters: EL2=pt,@ Solid-State Communications=pt,@1979Y9$M_|b9ld9@_dd99|Y930Y9$M_|b9ld9@_d{d99|Y93Y9$M_|b9ld9@_dd99|Y9157-162Y9$M_|b9ld9@_dd99|Y9%>\\As01mesant\Procite Databases\WCS\Articles\Mitonneau 1979.pdf,Y9$M_|b9ld9@_dd{99|Y9Y9$M_|b9ld9@_dd99|Y9' 0038-1098 Y9$M_|b9ld9@_dd99|Y9)Times Cited:127 Bibliography:16 ENGLISH LAB ELECTR & PHYS APPL, 3 AVE DESCARTES, F-94450 LIMEIL BR{EVANNES, FRANCE, GR273 Copyright 2003 SciSearch PlusY9$M_|b9ld9@_dd99|Y9+127Y9$M_|b9ld9@_dd99|Y965270|f Parallel Wave-Guides+`=tH@05.2.7`=tH@ Journal of Lightwave Technology`=tH@ Article`=tH@ Article|9$M_99@_9]91985 OCT9$M_99@_9]939$M_99@_9]959$M_99@_9]9 1135-1146 9$|M_99@_9]9%:\\Aeron\Procite Databases\WCS\Articles\Hardy A 1985 10.pdf'8=tH@8=tH@+1709$M_99@_|9]940320}M<Ԯ1?Pearton, S. J.x=^s|$At&T Bell Labs/Murray Hill//Nj/07974$x=^s|2Ion-Implantation in III-V Semiconductor Tech|N~~Layers\=!t,07.5.4\=!t, Applied Physics Letters\=!t, Article$M_TLM@_~M@ Jul 17, 1995 $M_TLM@_M@ 67$M_TLM@_M@3$M_TLM@_M@401-403$M_TLM@_M@~%8\\As01mesant\Procite Databases\WCS\Articles/Weeks TW.pdf8*Monocrystalline GaN(0001) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been gr~own via organometallic vapor phase epitaxy (OMVPE) on high-temperature monocrystalline ALN(0001) buffer layers predeposited on vicinal alpha(6H)-SiC(0001) wafers using TEG, TEA, and ammonia in a cold ~wall, vertical, pancake-style reactor. The surface morphology was smooth, and the PL spectrum showed strong near-band-edge emission with a full width at half-maximum (FWHM) value of 4 meV. The disloca~tion density within the first 0.5 mu m was approximate to 1 X 10(9) cm(-2); it decreased substantially with increasing film thickness. Controlled rt-type Si doping of GaN has been achieved for net car~rier concentrations ranging from similar to 1 X 10(17) to 1 X 10(20) Cm-3. Double-crystal XRC measurements indicated a FNHM value of 66 arcsec for the GaN(0004) reflection. (C) 1995 American Institute~ of Physics.$M_TLM@_M@+105$M_TLM@_M@,Sapphire/ Movpe$M_TLM@_M@3680M<Ԯ1?Malherbe, J. B.m=u3Univ Pretoria,Dept Phys/Pretoria 0002//South Africa3m=usSputtering of Compound Semic :CRC Critical Reviews <lN~5}doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi-quantum well lasers, and we give details of these areas and the metal masking layers} necessary for selective area processing. Finally, examples are given of the use of implantation in a variety of III-V devices.c$M_ln@_n+c+34c$M_ln@}_n+c,Molecular-Beam-Epitaxy/ Heterojunction Bipolar-Transistor/ P-Type Gaas/ High-Resistivity Regions/ As+ Dual Implants/ Gallium-Arsenide/ High-Energy/ Inp-Fe/ N-Type/ Electrical Characteri}8sticsc$M_ln@_n+c62150~p<@`YWeeks, T. W. //Bremser, M. D. //Ailey, K. S. //Carlson, E. //Perry, W. G. //Davis, R. F. Y\=!t,DN Carolina State Univ,Dept Mat Sci & Engn,Box 79~07/Raleigh//Nc/27695D\=!t,GaN Thin-Films Deposited Via Organometallic Vapor-Phase Epitaxy on Alpha(6h)-SiC(0001) Using High-Temperature Monocrystalline AlN Buffer ~Layers\=!t,07.5.4\=!t, Applied Physics Letters\=!t, Article$M_TLM@_~M@ Jul 17, 1995 $M_TLM@_M@ 67$M_TLM@_M@3$M_TLM@_M@401-403$M_TLM@_M@~%8\\As01mesant\Procite Databases\WCS\Articles/Weeks TW.pdf8*Monocrystalline GaN(0001) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been grM<Ԯ1?Malherbe, J. B.m=u3Univ Pretoria,Dept Phys/Pretoria 0002//South Africa3m=usSputtering of Compound Semic.^~0eals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconduc tors, and HgCdTe.$M_@_+27$M_@_,VCompound Semiconductors/ Bombardment-Induced Morphology/ Sputter-Induced Topography/ Sputter  Yield/ Ion-Solid Interactions/ Radiation-Induced Damage/ Structural Damage/ Electrical Damage/ Annealing/ Surface Composition Change/ Segregation/ Diffusion/ Preferential Sputtering/ Iii-Vi Semiconduc tors/ Ii-V Semiconductors/ Gaas/ Inp/ Sic/ Cdte/ Hgcdte/ Auger-Electron Spectroscopy/ X-Ray Photoelectron/ Ar+ Ion-Bombardment/ Implantation-Induced Damage/ Scanning Tunneling Microscope/ Layer Compos ition Changes/ Molecular-Beam Epitaxy/ Depth Profile Analysis/ Etching Induced Damage/ Anodic Oxide-FilmsV$M_@_62170onlinear Optical-Materials and Applications,(=@ u4,<05.1.3(=@ u4,< Materials Science Reports(=@ u4,<onlinear Optical-Materials and Applications,(=@ u4,<05.1.3(=@ u4,< Materials Science Reports(=@ u4,<al processing and computing. The primary motivation behind this review is to introduce the different areas involved, paying special attention to their interfaces. First, the optical non-linearities in semiconductor materials, semiconductor micr^bN~2M<@Malherbe, J. B.m=u3Univ Pretoria,Dept Phys/Pretoria 0002//South Africa3m=usSputtering of Compound Semiconductor Surfaces .2. Compositional Changes and Radiation-Induced Topography and Damagesm=u08.2.2m=u :CRC Critical Reviews in Solid State and Materials Sciences:m=u Review$M_@_1994$M_@_19$M_@_3$M_@_129-195$M_@_430$M_@_%B\\As01mesant\Procite Databases\WCS\Articles/Malherbe JB 1994 2.pdfB(=u*Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs, the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development dM<1?Fainman, Y.//Ma, J.//Lee, S. H.(=@ u4,<>Univ Calif San Diego,Dept Elect & Comp Engn/La Jolla//Ca/92093>(=@ u4,<,Nonlinear Optical-Materials and Applications,(=@ u4,<05.1.3(=@ u4,< Materials Science Reports(=@ u4,<^N~5y motivation behind this review is to introduce the different areas involved, paying special attention to their interfaces. First, the optical non-linearities in semiconductor materials, semiconductor microstructures and photorefractive materials are introduced. For the semiconductors we discuss the third-order non-linear susceptibilities due to virtual transitions (e.g., bound electrons in intrinsic semiconductors and non-linear motion and energy relaxation of free carriers in doped semiconductors) and due to real transitions (e.g. valence-to-conduction-band transitions, free-carrier transitions, impurity transitions and transitions in excitons and excitonic complexes). Recent advances in engineering semiconductor microstructures are discussed and shown to enhance their third-order non-li near optical susceptibilities in comparison with the bulk semiconductors. The mechanism of the photorefractive effect is next introduced and analyzed in conjunction with several engineering approaches to enhance the performances of the photorefractive non-linearities (e.g., non-stationary recording, multiphoton excitation, combination of the photorefractive effect with the electrorefractive non-li nearities near the band edge, etc.). Using the photorefractive materials as an example, we define a set of figures of merit based on the requirements from the optical devices for system applications.  Using these figures of merit we evaluate and discuss the optimization of different photorefractive materials: ferroelectric oxides (e.g., LiNbO3, BaTiO3, KNbO3, tungsten bronze family, etc.), compound;[?TLindau, I. //Chye, P. W. //Garner, C. M. //Pianetta, P. //Su, C. Y. //Spicer, W. E. THFaStanford Univ,Stanford Electr Labs/Stanford//Ca/94305^N~ M<@Fainman, Y.//Ma, J.//Lee, S. H.(=@ u4,<>Univ Calif San Diego,Dept Elect & Comp Engn/La Jolla//Ca/92093>(=@ u4,<,Nonlinear Optical-Materials and Applications,(=@ u4,<05.1.3(=@ u4,< Materials Science Reports(=@ u4,< Review$M_@_,Jan 1993$M_@_,9$M_@_,2-3$M_@_,53-139=@ u4,<=@ u4,<217$M_@_,%>\\As01mesant\Procite Databases\WCS\Articles/Fainman Y 1993.pdf>$M_@_,*4 A review is given of the present status of the non-linear optical materials and devices, and their applications for optical signal processing and computing. The primary motivation behind this review is to introduce the different areas involved, paying special attention to their interfaces. First, the optical non-linearities in semiconductor materials, semiconductor microstructures and photorefractive materials are introduced. For the semiconductors we discuss the third-order non-linear susceptibilities due to virtual transitions (e.g., bound electrons in intrinsic semiconductors and non-linear motion and energy relaxation of free carriers in doped semiconductors) and due to real transitions (e.g. valence-to-conduction-band transitions, free-carrier transiti;[?TLindau, I. //Chye, P. W. //Garner, C. M. //Pianetta, P. //Su, C. Y. //Spicer, W. E. THFaStanford Univ,Stanford Electr Labs/Stanford//Ca/94305^N~5t+uous two-wave and four-wave mixing of optical information carrying waves. These devices are evaluated and their optimization is discussed in conjunction with applications to analog and digital optical signal processing and computing. Examples of analog (e.g., inverse filter and linear algebra processor) and digital (e.g., parallel access optical memories and reconfigurable interconnects) optical computing applications will be also discussed.4 $M_@_,+23$M_@_,,Photorefractive Bi12sio20 Crystals/ Transient Energy-Transfer/ Electron-Hole Transport/ Quantum-Well Structures/ Holographic Storage/ Inp-Fe/ Phase Conjugation/ Barium-Titanate/ 45-Degrees-Cut Batio3/ Intensity Dependence$M_@_,62180;@TLindau, I. //Chye, P. W. //Garner, C. M. //Pianetta, P. //Su, C. Y. //Spicer, W. E. THFaStanford Univ,Stanford Electr Labs/Stanford//Ca/94305 ; Stanford Univ,Stanford Synchrotron RadiataHF>New Phenomena in Schottky-Barrier Formation on III-V Compounds4HF HF02.2HF &Journal of Vacuum Science & Technology&HF ArticleHF1978HF15HF4HF 1332-1339 HF%=\\AsM<1?Kahn, A.=qM@2Princeton Univ,Dept Elect Engn/Princeton//Nj/085402=qM@z30 Years of Atomic and Electronic-Stf Berkeley Lawrence Berkeley Lab/Berkeley//Ca/94720<=tH@&Hydrogen in Crystallik+[N~5,M<@ Haller, E. E. =tH@\\As01mesant\Procite Databases\WCS\Articles\Haller EE 1991.pdf,=tH@=tH@*3The state of the current understanding of hydrogen in elemental and compound semiconductors is reviewed. The results of new experimental and theoretical studies of the microscopic structure of acceptor-hydrogen and donor-hydrogen complexes are presented. Questions regarding hydrogen tunnelling in some of the acceptor and donor complexes in elp<^@5?jMiwa, K. //Fukumoto, A. M=xLtVDToyota Cent Res & Dev Labs Inc,41-1 Aza Yokomichi/Aichi 48011//JapanDM=xLtV~1st-Principles Calculation of the Structural ; Electronic ; and Vibrational Properties of Gallium Nitride and Aluminum Nitride~M=xLtV12.0M=xLtV "Physical Review B-Condensed Matter"M=xLtV Article$M_$R\S@_TSj  Sep 15, 1993 $M_$R\S@_TSj  48 Article$M_$R\S@_TSj  Sep 15, 1993 $M_$R\S@_TSj  48^N~Y$5emental semiconductors, as well as the problem of electronic states of isolated hydrogen, are discussed in the light of the most recent experimental findings. Also, some promising areas of future resesarch are indicated.39$M_L9<9@_49]L9+229$M_L9<9@_49]L962200p<@jMiwa, K. //Fukumoto, A. M=xLtVDToyota Cent Res & Dev Labs Inc,41-1 Aza Yokomichi/Aichi 48011//JapanDM=xLtV~1st-Principles Calculation of the Structural ; Electronic ; and Vibrational Properties of Gallium Nitride and Aluminum Nitride~M=xLtV12.0M=xLtV "Physical Review B-Condensed Matter"M=xLtV Article$M_$R\S@_TSj  Sep 15, 1993 $M_$R\S@_TSj  48$M_$R\S@_TSj 11$M_$R\S@_TSj  7897-7902 $M_$R\S@_TSj %>\\As01mesant\Procite Databases\WCS\Articles/Miwa K 1993 09.pdf>$M_$R\S@_TSj *TFirst-principles pseudopotential calculations have been performed on GaN and AlN in the wurtzite and zinc-blende structures. The mixed-basis approach is employed due to the localized nature of the valence charge density in these materials. In the stress calculation within the mixed-basis set, a correction term is introduced to the stress expression in order to make it consistent with the pressure given by the total-energy calculations. The lattice constants in the wurtzite structure are in good agreement with the experimental data. The band gap appM<1? Dupuis, R. D. g="uu>Univ Texas,Microelect Res Ctr,Mer 1 606d-R9900,Austin,Tx 78712>g="uuZEpitaxial Growth of 9i)Yw6D<@!Hartman, John M.//Erb, Darrell M.!?Charge coupled device with input for direct injection of signal?12.3.4260265 US4093872 US6/6/1978gDE2501934A1 DE2501934C2 GB1496081A JP50105392A2 JP52038398B4 NL0172705B NL0172705C NL7500888A US4093872g1US3760202 US3771149 US3789267 US3796932 US38018831Tompsett, Charge Transfer Devices,J. Vac. Sci. Technology, vol. 9, No. 4, (7-8/72), pp. 1166-1181. Tompsett, et al., Use of Charge-Coupled Devices for Delaying Analog Signals,IEEE, J. Solid State Circuits, vol. SC-8, (4/73), pp. 151-157. Melen, et al., One-Phase CCD: A New Approach to Charge-Coupled Device Clocking,IEEE, J. Solid State Circuits, (2/72), pp. 92-93. Tompsett, Using Charge-Coupled Devices for Analog Delay,CCD Applications Conf., Proc. (9/73), San Diego, Calif. Erb, et al., Buried Channel Charge Coupled Devices for Infrared Applications,CCD Applications Conf., Proc. (9/73), San Diego, Calif. Steckl, et al., Theoretical Analysis of Directly Coupled 8-12.mu.m Hybrid IRCCD Serial Scanning,CCD Applications Conf., Proc. (9/73), San Diego, Calif."IUS4276099 US4321614 US4768211 US4771175 US4896340 US4951302 US4360791 US4389661 US4554571 US4554675 US4725748 US4758741 US4845540 US4876585 US6021172 US6101232 US4409483 US4488165 US4812668 US4819067 US6166370 US6255643 US4621369 US4627083 US5471515 US5801681 US4661168 US4724470 US4974240 US5249055 US4197469 US4242600 US6320177I%;\\As01mesant\Procite Databases\WCS\Patents\US04093872__.pdf;'-G11C 19/28; H01L 29/78; H01L 27/14; H01L 31/0-+33700;1?ESu, C. Y. //Lindau, I. //Chye, P. W. //Skeath, P. R. //Spicer, W. E. E/=$y&9ԫ0Stanford Univ,Dept Elect Engn/Stanford//Ca/943050/ "Physical Review B-Coet, R. A. //Celotta, R. J. D=qq,Natl Inst Stand & Technol,Div Electron & Opt,=GwN~56M<@ Dupuis, R. D. g="uu>Univ Texas,Microelect Res Ctr,Mer 1 606d-R9900,Austin,Tx 78712>g="uuZEpitaxial Growth of III-V Nitride Semiconductors by Metalorganic Chemical Vapor DepositionZg="uu06.4.3g="uu Journal of Crystal Growthg="uu Review$M_@_hTJun 1997$M_@_hT178$M_@_hT1-2$M_@_hT56-73$M_@_hT94$M_@_hT%A\\As01mesant\Procite Databases\WCS\Articles\Dupuis RD 1997 06.pdfA$M_ۅ@_hT*The III-V compound semiconductors are widely used throughout the world (as well as in space) for a wide variety of electronic and optoelectronic devices. Recently, a strong research and commercial interest has developed in the use of the III-V nitrides for visible (blue and green) Light-emitting diodes and injection lasers and high-temperature electronics. The epitaxial growth of thin films and heterostructures of III-N was pioneered using the hydride vapor-phase epitaxial technique. However, in the past few years, the metalorganic chemical vapor deposition process ha<j=?!Hartman, John M.//Erb, Darrell M.!?Charge coupled device with input for direct injection of signal?12.3.4260265 US4093872 US6/6/1978gDE2501934A1 DE2501934C2 GB1496081A JP50105392A2 JP52038398B4 NL0172705B NL0172705C NL7500888A US4093872g1US3760202 US3771149 US3789267 US3796932 US38018831Tompsett, Charge Transfer Devices,J. Vac. Sci. Technoleath, P. R. //Spicer, W. E. E/=$y&9ԫ0Stanford Univ,Dept Elect Engn/Stanford//Ca/943050/^N~4L;@ESu, C. Y. //Lindau, I. //Chye, P. W. //Skeath, P. R. //Spicer, W. E. E/=$y&9ԫ0Stanford Univ,Dept Elect Engn/Stanford//Ca/943050/=$y&9ԫAPhotoemission-Studies of the Interaction of Oxygen With GaAs(110)A/=$y&9ԫ06.3.1/=$y&9ԫ "Physical Review B-Condensed Matter"/=$y&9ԫ Articlez$M_ @_^z 1982 Mar 15p=$y&9ԫp=$y&9ԫ25z$M_ @_^z6z$M_ @_^z 4045-4068 z$M_ @_^z%=\\As01mesant\Procite Databases\WCS\Articles\Su CY 1982 03.pdf,@/hH9XXFp=$y&9ԫ+101z$M_ @_^z40700=qq Science=qq Article$M_ @_ 1991$M_ @_ 251$M_ ƈqquManipulation of Adsorbed Atoms and Creation of New on Room-Temperature Surfaces With a Scanning Tunneling Microscopeu=qq08.4.1atabases\WCS\Articles/Whitman LJ.pdf5$M_ @_ *@A general method of manipulating adsorbed atoms and molecules on room-temperature surfaces with the use of a scanning tunneling microscope is described. By applying an appropriate voltage pulse between the sample and probe tip, adsorbed atoms can be induced to diffuse into the region beneath the tip. The field-induced diffusion occurs preferentially toward the tip during the voltaan be induced to diffuse into the region beneath the tip. The field-induced diffusion occurs preferentially toward the tip during the volta^~N~2D 6;@DWhitman, L. J. //Stroscio, J. A. //Dragoset, R. A. //Celotta, R. J. D=qq,Natl Inst Stand & Technol,Div Electron & Opt,=qquManipulation of Adsorbed Atoms and Creation of New on Room-Temperature Surfaces With a Scanning Tunneling Microscopeu=qq08.4.1=qq Science=qq Article$M_ @_ 1991$M_ @_ 251$M_ ƈ@_ 4998$M_ @_  1206-1210 $M_ @_ %:\\As01mesant\Procite Databases\WCS\Articles/Whitman LJ.pdf:$M_ ƈ@_ *@A general method of manipulating adsorbed atoms and molecules on room-temperature surfaces with the use of a scanning tunneling microscope is described. By applying an appropriate voltage pulse between the sample and probe tip, adsorbed atoms can be induced to diffuse into the region beneath the tip. The field-induced diffusion occurs preferentially toward the tip during the voltage pulse because of the local potential energy gradient arising from the interaction of the adsorbate dipole moment with the electric field gradient at the surface. Depending upon the surface and;1?Yamada, M. //Suematsu, Y. =xq3[Kanazawa Univ,Fac Technol,Dept Elect ; Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo[=xq38Analysis of Gain Suppression in Undoped Injection-Lasers8=xq310.1.1=xq3 Journal of Applied PhysicsH=o7um NitrideH=o7^N~ 66p<@~VKozawa, T. //Kachi, T. //Kano, H. //Taga, Y. //Hashimoto, M. //Koide, N. //Manabe, K. V=o7`Toyota Cent Res & Dev Labs Inc/Nagakute/Aichi 48011/Japan ; Toyoda Gosei Co Ltd/Aichi 452//Japan`=o7HRaman-Scattering From LO Phonon-Plasmon Coupled Modes in Gallium NitrideH=o705.1.3=o7 Journal of Applied Physics=o7 Article$M_ܱ̳@_ij)ܨ 1994 Jan 15$M_܊̳@_ij)ܨ$M_ܱ̳@_ij)ܨ$M_ܱ̳@_ij)ܨ 75$M_ܱ̳@_ij)ܨ2$M_ܱ̳@_ij)ܨ 1098-1101 $M_ܱ̳@_ij)ܨ%@\\As01mesant\Procite Databases\WCS\Articles/Kozawa T 1994 01.PDF@$M_ܱ̳@_ij)ܨ*Raman spectra of n-type gallium nitride with different carrier concentrations have been measured. The LO phonon band shifted towards the high-frequency side and broadened with an increase in carrier concentration. Results showed that the LO phonon was coupled to the overdamped plasmon in gallium nitride. The carrier concentrations and damping constants were determined by line-shape fitting of the coupled modes and compared to values obtained fr;1?PABedair, S. M. //Tischler, M. A. //Katsuyama, T. //Elmasry, N. A. A(/=^v ԫ0N Carolina State Univ,Dept Elect & Comp Engn,Box0(/=^v ԫ.Atomic Layer Epitaxy of III-V Binary Compounds.(/=^v ԫ06.1.3(/=^v ԫ Applied Physics Letters(/=oq D=oq D^N~dl662 US4211821 US4230997 US4614564 US4632725 US4762806 US4833095 US6108464q=oq D%;\\As01mesant\Procite Databases\WCS\Patents\US04111725__.pdf;=oq D'H01L 21/20; H01L 21/306=oq D+37=oq D730<@ Nielsen, O. H.//Martin, R. M.8/=oO0Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/9430408/=oO-Quantum-Mechanical Theory of Stress and Force-8/=oO07.2.2h=oOh=oO "Physical Review B-Condensed Matter"8/=oO Article[$M_$df@_ fd@$[ 1985 Sep 15 [$M_$df@_ fd@$[32[$M_$df@_ fd@$[6[$M_$df@_ fd@$[ 3780-3791 [$M_$df@_ fd@$[57[$M_$df@_ fd@$[%C\\As01mesant\Procite Databases\WCS\Articles\Nielsen OH 1985 09b.pdf,[$M_$df@_ fd@$[[$M_$df@_ fd@$[+183[$M_$df@_ fd@$[60960=t2 1970$M_@_231$M_@_29$M_@_2 1963-1990 $M_@_=t2 1970$M_@_231$M_@_29$M_@_2 1963-1990 $M_@_=t2 1970$M_@_231$M_@_29$M_@_2 1963-1990 $M_@_@_265310ent: (c)2003 Inst. For Sci. Info4 =m26\<@8Mahoney, Gerard Edward//Cho, A. Y. //DiLorenzo, James V.=oq D=oq D=oq D=oq D=oq D6Selective lift-off technique for fabricating GaAs FETs6=oq D06.5=oq D706518=oq D US4111725 =oq DUS=oq D9/5/1978=oq D US4111725 =oq DmUS3326729 US3490943 US3514845 US3567508 US3609477 US3698947 US3721592 US3740835 US3808069 US3912546 US3928092m=oq DMehal et al. GaAs Integrated Microwave Circuits, IEEE J. Solid State Circuits, vol. SC-3, No. 2, Jun. 1968, pp. 113-116. Joshi et al., Integrated Circuit Fabrication Process, I.B.M. Tech. Discl. Bull., vol. 18, No. 6, Nov. 1975, pp. 1766-1767.=oq D"qUS4268844 US4304042 US4460910 US4545109 US4837175 US4883770 US5970352 US6091117 US4325181 US4325747 US4426767 US4450462 US4935789 US4948751 US4326330 US4389768 US4550489 US4601096 US4711858 US4724220 US5278094 US5841931 US4404732 US4422087 US5084409 US5218216 US4637129 US4651179 US4980312 US5026l Theory of Stress and Force-8/=oO07.2.2h=oOh=oO "Physical Review B-Condensed Matter"8/=oO Article[$M_$df@_ fd@$[ 1985 Sep 15 [$M_$df@_ fd@$[32[$M_$df@_ fd@$[6[$31$M_@_29$M_@_2 1963-1990 $M_@_^N~\t>@*Fawcett, W. //Boardman, A. D. //Swain, S. *=t2OMonte-carlo determination of electron transport properties in gallium arsenideO=t2E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE=t2 *Journal of Physics and Chemistry of Solids*=t2 1970$M_@_231$M_@_29$M_@_2 1963-1990 $M_@_2%>\\As01mesant\Procite Databases\WCS\Articles/Fawcett W 1970.pdf,$M_@_2$M_@_2)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_@_2+676$M_@_2,A1970h067500001$M_@_265310$M_@_8$M_@_ 4569-4585 $M_@_%?\\Aeron\Procite Databases\WCS\Articles\Takagahara T 1993 02.pdf' "Physical Review B-Condensed Matter"0"=8v Article$M_@_ 1993 Feb 15 $M_@_47 "Physical Review B-Condensed Matter"0"=8v Article$M_@_ 1993 Feb 15 $M_@_47comparison with the quantum-well and quantum-wire structures. A formula of the lowest exciton energy in the strong confinement regime is derived and the significance of the dielectric confinement effect is clarified. We investigate the depen^eN~l6;@Takagahara, T. 0"=8v*Nippon Telegraph & Tel Publ Corp,Basic Res*0"=8vrEffects of Dielectric Confinement and Electron-Hole Interaction on Excitonic States in Semiconductor Quantum DotsmP@=8vP@=8v03.5.3P@=8v "Physical Review B-Condensed Matter"0"=8v Article$M_@_ 1993 Feb 15 $M_@_47$M_@_8$M_@_ 4569-4585 $M_@_%D\\As01mesant\Procite Databases\WCS\Articles\Takagahara T 1993 02.pdf,$M_@_$M_@_*A general scheme is established within the effective-mass approximation to calculate systematically the excitonic energy spectra in a semiconductor quantum dot including the dielectric confinement effect. This effect is found to appear most pronounced in the quantum-dot structure in comparison with the quantum-well andj.=z1?z?Frensley, W. R. //Kroemer, H. =(wԫ9Univ Calif Santa Barbara,Dept Elect Engn & Comp Sci/Santa9=(wԫFTheory of Energy-Band Lineup at an Abrupt Semiconductor HeterojunctionF=(wԫ02.1.1=(wԫ "Physical Review B-Condensed Matter"=(wԫ Article$M_@_lSep 1977=(wԫ=(wԫ16$M_G@_l+195$M_@_l16250$M_^N~)$6,6@_l6$M_@_l 2642-2652 $M_@_l%C\\As01mesant\Procite Databases\WCS\Articles\Frensley WR 1977 09.pdfC$M_L@_l+195$M_@_l16250j.=@2AfJewell, J. L. //Scherer, A. //Mccall, S. L. //Lee, Y. H. //Walker, S. //Harbison, J. P.//Florez, L. T.f =+vȒ At&T Bell Labs/Holmdel//Nj/07733 =+vȒNLow-Threshold Electrically Pumped Vertical-Cavity Surface-Emitting MicrolasersN =+vȒ11.2.1 =+vȒ Electronics Letters =+vȒ Article $M_  @_ 8 T  1989 Aug 17 $M_  @_ 8 T 25 $M_  @_ 8 T 17 $M_  @_ 8 T  1123-1124 $M_  @_ 8 T %>\\As01mesant\Procite Databases\WCS\Articles/Jewell JL 1989.pdf> $M_ M @_ 8 T +169 $M_  @_ 8 T 16690=0t  Thin Solid Films=0t  Article$M_t@_l 1988$M_t@_l  163(Sep)  =0t  Thin Solid Films=0t  Article$M_t@_l 1988$M_t@_l  163(Sep)  =0t  Thin Solid Films=0t  Article$M_t@_l 1988$M_t@_l  163(Sep)   }=uԫ7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987}=uԫ3Schottky Barriers and Semic7gr2|,6W$M_T`Db@_@(Ruch, J. G. //Fawcett, W. =HpPfTemperature dependence of transport properties of gallium arsenide determined by a monte-carlo methodf=HpPE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE=HpP Journal of Applied Physics=HpP 1970'$M_02@_2'41'$M_02@_2'9'$M_02@_2' 3843-3849 '$M_02@_2'%<\\As01mesant\Procite Databases\WCS\Articles/Ruch JG 1940.pdf,'$M_02@_2''$M_02@_2')0Copyright Statement: (c)2003 Inst. For Sci. Info0'$M_02@_2'+279'$M_02@_2',A1970h196600045'$M_02@_2'65320=0tBXlGuided-Wave Acoustooptic Bragg Modulators for Wideband Integrated Optic Communications and Signal-ProcessinglHG=0tBX10.5.2HG=0tBX )IEEE Transactions on Circuits and Systems)HG=0tBX Article $M_t@_l 26 $M_t@_l 12 $M_t@_l  1N~;@ Tsai, C. S.  HG=0tBX9Carnegie Mellon Univ,Dept Elect Engn/Pittsburgh//Pa/152139HG=0tBXlGuided-Wave Acoustooptic Bragg Modulators for Wideband Integrated Optic Communications and Signal-ProcessinglHG=0tBX10.5.2HG=0tBX )IEEE Transactions on Circuits and Systems)HG=0tBX Article $M_t@_l 26 $M_t@_l 12 $M_t@_l  1072-1098=0tBX=0tBX%;\\As01mesant\Procite Databases\WCS\Articles/Tsai C 1979.pdf; $M_t@_l +109- $M_t@_l 43500;@ Tsang, W. T.  &=u$At&T Bell Labs/Murray Hill//Nj/07974$&=u%Chemical Beam Epitaxy of InP and GaAs%&=u06.4.1&=u Applied Physics Letters&=u Article$M_DJ|K@_tK<1984$M_DJ|K@_tK<45$M_DJ|K@_tK<11$M_DJ|K@_tK< 1234-1236 $M_DJ|K@_tK<%@\\As01mesan;1? Tsang, W. T.  ?=xgq'Bell Tel Labs Inc/Murray Hill//Nj/07974'?=xgqgA Graded-Index Wave-Guide Separate-Confinement Laser With Very Low Threshold and a Narrow Gaussian-Beamg?=xgq10.3.1?=xgq Applied Physics Letters?= Applied Physics Letters?=#SN~p|+pt\Procite Databases\WCS\Articles/Tsang WT 1984 12.pdf@+176$M_DJ|K@_tK<43510;@ Tsang, W. T.  ?=xgq'Bell Tel Labs Inc/Murray Hill//Nj/07974'?=xgqgA Graded-Index Wave-Guide Separate-Confinement Laser With Very Low Threshold and a Narrow Gaussian-Beamg?=xgq10.3.1?=xgq Applied Physics Letters?=xgq ArticleW$M_T`Db@_=xuS$At&T Bell Labs/Murray Hill//Nj/07974$>=xuSDElectron-Transport at Metal-Semiconductor Inte,_43600/=xuS02.1.4/=xuS "Physical R1N~&V|+D6@_Tvl$M_l\@_Tvl*A dipole-layer approach is presented, which leads to analytic solutions to the potential and the electronic transport at metal-semiconductor interfaces with arbitrary Schottky-barrier-height profiles. The presence of inhomogeneities in the Schottky-barrier height is shown to lead to a coherent explanation of many anomalies in the experimental results. These results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.$M_l\@_Tvl+139$M_l\@_Tvl,rSchottky-Barrier Heights/ Current-Voltage Mixed-Phase Contacts/ Gap States/ Diodes/ Silicon/ Transition/ Silicidesr$M_l\@_Tvl43610y;@^.LKash, K. //Scherer, A. //Worlock, J. M. //Craighead, H. G. //Tamargo, M. C. L'=v;&Bell Commun Res Inc/Red Bank//Nj/07701&'=v;GOptical Spectroscopy of Ultrasmall Structures Etched from Quantum-WellsG'=v;03.5.3'=v; Applied Physics Letters'=v; Article^$M_Dg4i@_,iXD^ 1986 OCT 20 ^$M_Dg4i@_,iXD^49^$M_Dg4i@_,iXD^16;1?xVahala, K. //Yariv, A. =ty|)Caltech,Dept Appl Phys/Pasadena//Ca/91125)=ty|9Semiclassical Theory of Noise in Semiconductor-Lasers .1.9=ty|10.4.3=ty| #IEEE Journal of Quantum Electronics#=ty| Art} =mN~1991 =@t ԫ43$M_@_ 3$M_@_  2450-2453 $M_@_ %?\\As01mesant\Procite Databases\WCS\Articles\Sorba L 1991 01.pdf?=@t ԫ*FThe presence of thin ordered layers of Si within the interface region of AlAs-GaAs heterostructures is found to tune the valence-band offset throughout the 0.02-0.78 eV range. High-resolution x-ray-photoemission studies of heterostructures prepared in situ by molecular-beam epitaxy as a function of substrate temperature, arsenic flux, interface concentration of Si, and growth sequence (AlAs on GaAs on AlAs) indicate that this tunability is associated with a Si-related local dipole which can be added to or subtracted from the intrinsic AlAs-GaAs valence-band offset of 0.40 eV.F$M_@_ +108$M_@_ ,Epitaxy$M_ݦ@_ 44520j.=1?AYLee, Y. H. //Jewell, J. L. //Scherer, A. //Mccall, S. L. //Harbison, J. P. //Florez, L.T.T!=t@XX!=t@XXeAt&T Bell !=t@XX11.2.1!=t@XX Electronics Letters!=t@XX Article $M_@_6J  1989 Sep 28!=t@XX!=t@XX!=t@XX25 $M_@_6J 20 $M_@_6J  1377-1378 $M_@_6J %9\\Aeron\Procite Databases\WCS\Articles\Lee YH 1989 09.pdf9 $M_@_6J +1062 $M_@_6J 16820^?N~D6>@2 Wiley, J. D.  =q-<*Polar mobility of holes in iii-v compounds*=q-<E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE=q-< "Physical Review B-Condensed Matter"=q-< 1971e$M_Dn4p@_,pDe4e$M_Dn4p@_,pDe8e$M_Dn4p@_,pDe 2485-2493Ф=q-<Ф=q-<%@\\As01mesant\Procite Databases\WCS\Articles\Wiley JD 1971 10.pdf@e$M_Dn4p@_,pDe)0Copyright Statement: (c)2003 Inst. For Sci. Info0e$M_Dn4p@_,pDe+119e$M_Dn4pV@_,pDe,A1971k550400024e$M_Dn4p@_,pDe65330;@ Schneider, H. //Vonklitzing, K.  p=whԫ7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007p=whԫhThermionic Emission and Gaussian Transport of Holes in a GaAs/AlxGa1-xAs Multiple-Quantum-Well Structurehp=whԫ03.2.3p=whԫ "Physical Review B-Condensed Matter"p=whԫ Articlez$M_ @_z 1988 Sep 15 p=whԫ38z$M_ @_z9z$M_ @_z 6160-6165 z$M_ @_z%C\\As01mesant\Procite Databases\WCS\Articles\Schneider H 1988 09.pdf,@/hH;z1?USorba, L. //Bratina, G. //Ceccone, G. //Antonini, A. //Walker, J. F. //Franciosi, A. U0=@t ԫ^Consorzio Interuniv Fis Mat,Tecnol Avanzate Superficrostructures is found L|N~[view B-Condensed Matter"p=whԫ Articlez$M_ @_z 1988 Sep 15 p=whԫ38z$M_ @_z9z$M_ @_z 6160-6165 z$M_ @_z%C\\As01mesant\Procite Databases\WCS\Articles\Schneider H 1988 09.pdf,@/hHq9XXFp=whԫ+110z$M_ @_z44450;@USorba, L. //Bratina, G. //Ceccone, G. //Antonini, A. //Walker, J. F. //Franciosi, A. U0=@t ԫ^Consorzio Interuniv Fis Mat,Tecnol Avanzate Superfici & ; Univ Minnesota,Dept Chem Engn & Mat^0=@t ԫXTuning AlAs-GaAs Band Discontinuities and the Role of Si-Induced Local Interface DipolesX0=@t ԫ02.1.20=@t ԫ "Physical Review B-Condensed Matter"0=@t ԫ Article$M_@_  Jan 15, Labs/Holmdel//Nj/07733 ; Bellcore/Red Bank//Nj/07701 ; at&T Bell Labs/Murray Hill//Nj/07974e!=t@XXVRoom-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser DiodesV!=t@XX11.2.1!=t@XX Electronics Letters!=t@XX Article $M_@_6J  1989 Sep 28!=t@XX!=t@XX!=t@XX25 $M_@_6J 20 $M_@_6J  1377-1378 $M_@_6J %9\\Aeron\Procite Databases\WCS\Articles\Lee YH 1989 09.pdf9 $M_@_6J +106]7g'L6j.=@AYLee, Y. H. //Jewell, J. L. //Scherer, A. //Mccall, S. L. //Harbison, J. P. //Florez, L.T.T!=t@XX!=t@XXeAt&T Bell Labs/Holmdel//Nj/07733 ; Bellcore/Red Bank//Nj/07701 ; at&T Bell Labs/Murray Hill//Nj/07974e!=t@XXVRoom-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser DiodesV!=t@XX11.2.1!=t@XX Electronics Letters!=t@XX Article $M_@_6J  1989 Sep 28!=t@XX!=t@XX!=t@XX25 $M_@_6J 20 $M_@_6J  1377-1378 $M_@_6J %>\\As01mesant\Procite Databases\WCS\Articles\Lee YH 1989 09.pdf> $M_@_6J +7106 $M_@_6J 16820y;1?.Lent, C. S. //Cohen, P. I. X=temUniv Minnesota,Sch Phys & Astron/Minneapolis//Mn/55455 ; Univ Minnesota,Dept Elect Engn/Minneapolis//Mn/55455e$M_Ll@_dvL1984$M_Ll@_dvL139$M_Ll@_dvL1$M_Ll@_dvL121-154$M_Ll@_dvL%7\\Aeron\Procite Databases\WCS\Articles/Lent CS 1984.pdf'@=te@L=te+261$M_Ll@_dvL11930;t=?8\\As01mesant\Procite Databases\WCS\Articles/Wagner RJ 1980.pdf>Yn=yr+185$M_@_*44600;@BWaldrop, J. R. =@_>3 1984 Jul-SepX/=@_>333$M_<>@_>3445-4483$M_<>@_>3%B\\As01mesant\Procite Databases\WCS\Articles\Waldrop JR 19M<Ԯ1?*Kohl, P. A.//Ostermayer, F. W.=t:@$At&T Bell Labs/Murray Hill//Nj/07974$=t:@OPhotoelectrochemical Methodsical MethodsON~+;@(Weil, T. //Vinter, B. /=ksO:Thomson Csf,Cent Rech Lab,Domaine Corbeville,Bp 10/F-91401:/=ksOXEquivalence Between Resonant Tunneling and Sequential Tunneling in Double-Barrier Diodes6/=ksO /=ksO/=ksO04.1.1.20=ksO0=ksO Applied Physics Letters/=ksO ArticleJ$M_SU@_UIJ 1987 May 4 J$M_SU@_UIJ50J$M_SU@_UIJ18J$M_SU@_UIJ 1281-1283 J$M_SU@_UIJ%>\\As01mesant\Procite Databases\WCS\Articles\Weil T 1987 05.pdf,J$M_SU@_UIJJ$M_SU@_UIJ+163J$M_SU@_UIJ44840<1?KBuiocchi, Charles Joseph//Olsen, Gregory Hammond//Zamerowski, Thomas JosephKKVapor phase growth technique of III-V compounds utilizing a preheating stepK06.4466175 hosphineJ. Electrochem. Soc., vol. 113, No. 7, Jul. 1966, pp. 724-728. Gabor, T., Epitaxial Growth of Gallium Arsenide on Germanium SubstratesIBID., vol. 111, No. 7, Jul. 1964, pp. 817-820. Barber, G. F., Two-Chamber Air-to-Vacuum Lock SystemI.B.M. Tech. Discl. Bull., vol. 11, No. 7, Dec. 1968, pp. 757-758. Grochowski et al., Slow Cooling to Minimize Distortion --IBID., vol. 14, No. 5, Oct. 1971, p. 1640.ϭ"US4279670 US4316430 US4328508 US4355396 US4359774 US4380862 US4393504 US4416011 US4416012 US4429395 US4488914 US4507169 US4533410 US4561007 US4586066 US4586067 US4587544 US4645689 US4697202 US469^N~<@KBuiocchi, Charles Joseph//Olsen, Gregory Hammond//Zamerowski, Thomas JosephKKVapor phase growth technique of III-V compounds utilizing a preheating stepK06.4466175 US4116733 US 9/26/1978  US4116733 OUS3314393 US3441453 US3473510 US3480491 US3615931 US3672948 US3893876 US3984263OTietjen et al., Preparation -- GaArP using Arsine and PhosphineJ. Electrochem. Soc., vol. 113, No. 7, Jul. 1966, pp. 724-728. Gabor, T., Epitaxial Growth of Gallium Arsenide on Germanium SubstratesIBID., vol. 111, No. 7, Jul. 1964, pp. 817-820. Barber, G. F., Two-Chamber Air-to-Vacuum Lock SystemI.B.M. Tech. Discl. Bull., vol. 11, No. 7, Dec. 1968, pp. 757-758. Grochowski et al., Slow Cooling to Minimize Distortion --IBID., vol. 14, No. 5, Oct. 1971, p. 1640.ϭ"US4279670 US4316430 US4328508 US4355396 US4359774 US4380862 US4393504 US4416011 US4416012 US4429395 US4488914 US4507169 US4533410 US4561007 US4586066 US4586067 US4587544 US4645689 US4697202 US4699675 US4700209 US4719124 US4734387 US4736705 US4761680 US4914494 US4981814 US5997588%;\\As01mesant\Procite Databases\WCS\Patents\US04116733__.pdf;'#H01L 21/205; H01L 29/30; H01L 29/38#+28740<j=?Christensen, Douglas A.p0=2v2в Semiconductor temperature sensor p0=2v2в12.3.3(C=2v2 US4136566 p0=2v2вUS2824235 US3960017 US4016761p0=2v2в")US4201446 US4245507 US4316388 US4338516 US4432599 US4492121 US4560286 US4574172 US4671651 US4689483 US4906107 US4986671 US5118200 US5183338 US5385404 US5385544 US5779365 US5848986 US6283632 US4278349 US4288159 US4355910 US4359622 US4626110 US4650003 US4841150 US4859Z^N~hT6<@Christensen, Douglas A.p0=2v2в Semiconductor temperature sensor p0=2v2в12.3.3(C=2v2в600055p0=2v2в US4136566 p0=2v2вUSp0=2v2в 1/30/1979 p0=2v2в US4136566 p0=2v2вUS2824235 US3960017 US4016761p0=2v2в")US4201446 US4245507 US4316388 US4338516 US4432599 US4492121 US4560286 US4574172 US4671651 US4689483 US4906107 US4986671 US5118200 US5183338 US5385404 US5385544 US5779365 US5848986 US6283632 US4278349 US4288159 US4355910 US4359622 US4626110 US4650003 US4841150 US4859079 US5290103 US5350236 US5470308 US5470309 US5630794 US5672153 US6022334 US6102886 US4298794 US4307607 US5352038 US5364187 US5514131 US5531677 US5720718 US5720719 US4516864 US4523092 US4708494 US4735477 US5004913 US5075544 US5366490 US5370675 US5542915 US5554110 US5895370 USRE31832 US4577109 US4621929 US5110216 US5112137 US5409453 US5421819 US5556377 US5599294 USRE36050 US6019507 US4176551 US4176552 US4374328 US4401694 US4749254 US4785824 US4790669 US4799756 US5218212 US5263776 US5435805 US5456662 US5599295 US5607389 US6146014 US6206847)p0=2v2в%;\\As01mesant\Procite Databases\WCS\Patents\US04136566__.pdf;p0=2v2в' G01K 11/18 p0=2v2в+81p0=2v2в750>h1?<Shah, J. //Leite, R. C. C. 0= w4DX>Radiative recombination from photoexcited hot carriers in gaas>0= w4DXR01.6.Mdu+120$M_$@_ Md,A1969d398100012$M_$@_ Md65340VN~|D\3EGd3HIl3KK LL Mt3OPP Q|3RS3TUV3WY3Z3\\^` a)bcd3e$f,g3h4i3k<kDlLmTm 3n\n 3odp3qlrtss |s3tu\+vww 3x3y{3|~3 34* 4 4 4$4$,4,444<D<4T L\ D4L4dltT4|\4d4l4t4 + |4L*4  44$),4<DT )4L\d4l|4tT*4 44d+4<DLT\dltd*zpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&$ (1) the enhanced radiative recombination of the metastable two-dimensional exciton polaritons, (2) the spin relaxation of excitons, and (3) the momentum relaxation of excitons. We also show that these three processes have comparable rates, so that a unified model accounting for all important processes is essential for a correct analysis of the experimental results. Using such a unified mode l, we have determined the rates of these processes contributing to the initial relaxation of excitons as a function of quantum-well width, temperature, and applied electric field. Quantum confineme nt strongly influences the radiative recombination and spin relaxation of excitons, and our study provides significant insights into these processes in quantum wells. The measured radiative recombi nation rate is about a factor of 2 smaller than calculated theoretically. The electric field reduces the electron-hole overlap and hence reduces the spin-relaxation rate of excitons between the opt ically allowed \+/-1) states. The measured variation is in good qualitative agreement with a recent theory, but somewhat slower than predicted by the theory.HHBN +115HHBN,Two-Dimensional Exciton/ Spin-Relaxation/ Radiative Lifetimes/ Temperature-Dependence/ Homogeneous-Linewidth/ Exchange Interaction/ Rayleigh-Scattering/k Energy Relaxation/ Electric-Field/ Recombination/ Pp124HHBN65350;1?ڱOLevy, P. M. //Ounadjela, K. //Zhang, S. //Wang, Y. //Sommers, C. B. //Fert, A. O`Y=v5ԫgNyu,Dept Phys,4 Washington Pl/New York//Ny/10003 ; Univ Pa_$ @FgVinattieri, A. //Shah, J. //Damen, T. C. //Kim, D. S. //Pfeiffer, L. N. //Maialle, M. Z. //Sham, L. J. gHHB@Exciton dynamics in gaas quantum-wells under resonant excitation@HHB03.2.3HHB "Physical Review B-Condensed Matter"HHB Oct 15 1994 HHBN50HHBN15HHBN 10868-10879 HHBN%D\\As01mesant\Procite Databases\WCS\Articles\Vinattieri A 1994 10.pdfDHHBN)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHBN*We present a comprehensive investigation of the dynamics of resonantly excited nonthermal excitons in high-quality gaas/alxga1-xas multiple-quantum-well structures on picosecond time scales. The dynamics was investigated using the luminescence upconversion technique with two independently tunable, synchronized dye lasers, which allowed measurements of the time evolution of polarized resonant luminescence with 4-ps time resolution. We show that the evolution of excitons from the initial nonthermal distribution to the thermal regime is determined by three different physical processes: (1) the enhanced radiative recombination of the metastable two-dimensional exciton polaritons, (2) the spin relaxation of excitons, and (3) the momentum relaxation of excitons. We also show that t;1?ڱOLevy, P. M. //Ounadjela, K. //Zhang, S. //Wang, Y. //Sommers, C. B. //Fert, A. O`Y=v5ԫgNyu,Dept Phys,4 Washington Pl/New York//Ny/10003 ; Univ PasH9XXF@Q=v5ԫ+131y$M_<,@_$ nN~&$\6;@cLoh, E. Y. //Gubernatis, J. E. //Scalettar, R. T. //White, S. R. //Scalapino, D. J. //Sugar, R. L. cp=puԫUniv Calif Los Alamos Sci Lab,Ctr Nonlinear Studies/Los ; Univ Calif Los Alamos Sci Lab,Div Theoret/Los ; Univ Illinois,Dept Phys/Urbana//Il/61801 ; Univ Calif Santa Barbara,Dept Phys/Santa Barbara//Ca/93106p=puԫASign Problem in the Numerical-Simulation of Many-Electron SystemsAp=puԫ02.4.1p=puԫ "Physical Review B-Condensed Matter"p=puԫ ArticleQ$M_lZ@_lQ 1990 May 1 s=puԫ s=puԫ41Q$M_lZ@_lQ13Q$M_lZ@_lQ 9301-9307 Q$M_lZ@_lQ%>\\As01mesant\Procite Databases\WCS\Articles\Loh EY 1990 05.pdf,@/hH9XXF s=puԫ s=puԫ+117Q$M_lZ@_lQ45540̬_Scanning Tunneling Microscopy Comparison of GaAs(001) Surfaces Grown by Molecular-Beam Epitaxy_x/=ir$̬06.2.1 Applied Physics Lettersx/̬_Scanning Tunneling Microscopy Comparison of GaAs(001) Surfaces Grown by Molecular-Beam Epitaxy_x/=ir$̬06.2.1 Applied Physics Lettersx/f=$M_@_*We report the first scanning tunneling microscope observations of molecular beam epitaxy grown GaAs(001) vicinal surfaces cut 2-degrees towards (111)A and 2-degrees towards (111)B. The A-t(=Ѕylԫ Physical Recalculation of velocity-field relationship for gallium nitrideK^lN~d6< Letters09=hw&ԫ Article$M_@_ 1989 Mar 20=hw&ԫ=hw&ԫ62$M_@_12$M_@_ 1407-1410 $M_@_%D\\As01mesant\Procite Databases\WCS\Articles\Scalettar RT 1989 03.pdf,@/hH9XXF =hw&ԫ=hw&ԫ+132$M_@_45940;@Z6Teitsworth, S. W. //Westervelt, R. M. //Haller, E. E. 6ȫ(=HxVԫHarvard Univ,Div Appl Sci/Cambridge//Ma/02138 ; Harvard Univ,Dept Phys/Cambridge//Ma/02138 ; Univ Calif Berkeley Lawrence Berkeleyȫ(=HxVԫ9Non-Linear Oscillations and Chaos in Electrical Breakdown9ȫ(=HxVԫ02.3.2ȫ(=HxVԫ Physical Review Lettersȫ(=HxVԫ Article$M_@_ 1983 Aug 29 5=HxVt Brillouin-Scattering of Excitonic Polaritons in Gallium-ArsenideI=n05.1.3=n=n Physical Review Letters=n Article$M_Ԥ@_̤. 1977 April 11 $M_Ԥ@_̤.38$M_Ԥ@_̸.15$M_Ԥ@_̤.865-868$M_Ԥ@_̤.%=\\Aeron\Procite Databases\WCS\Articles\Ulbrich RG 1977 04.pdf=$M_Ԥ@_̤B.+125$M_Ԥ@_̤.46220pound Semicond Microelectr/UrbaFv6f4Lԫ 5=HxVԫ51$M_@_9$M_@_825-828$M_@_%E\\As01mesant\Procite Databases\WCS\Articles\Teitsworth SW 1983 08.pdf,@/hH9XXF p5=HxVԫp5=HxVԫ+134$M_@_46170;@Ulbrich, R. G. //Weisbuch, C. =n9Ecole Polytech,Phys Mat Condensee Lab,Cnrs,Equipe Rech/F-9=nIResonant Brillouin-Scattering of Excitonic Polaritons in Gallium-ArsenideI=n05.1.3=n=n Physical Review Letters=n Article$M_Ԥ@_̤. 1977 April 11 $M_Ԥ@_̤.38$M_Ԥ@_̸.15$M_Ԥ@_̤.865-868$M_Ԥ@_̤.%B\\As01mesant\Procite Databases\WCS\Articles\Ulbrich RG 1977 04.pdfB$M_ԤݸG@_̤.+125$M_Ԥ@_̤.46220trachloride PlasmasH8}=0s08.2.38}=0s Applied Physics Letters8}=0s Article$Mtrachloride PlasmasH8}=0s08.2.38}=0s Applied Physics Letters8}=0s Article$Mtrachloride PlasmasH8}=0s08.2.38}=0s Applied Physics Letters8}=0s Article$M1aBrKl6TSociety of America B-Optical Physics ;=h=سta< Article$M_4$@_h41989 04$M_4$@_h46$M_4$@_h44$M_4$@_h4808-813o=سta<o=سta<%>\\As01mesant\Procite Databases\WCS\Articlest/Wang Y 1989 04.pdf>$M_4$@_h4+133$M_4$@_h446340;@Wei, S. H. //Zunger, A. Y=0vԫ&Solar Energy Res Inst/Golden//Co/80401&Y=0vԫABand-Gap Narrowing in Ordered and Disordered Semiconductor AlloysAY=0vԫ01.3.3 Electron BandgapsY=0vԫ Applied Physics LettersY=0vԫ Article$M_@_ 1990 Feb 12 $M_@_56$M_@_7$M_@_662-664$M_@_%>\\As01mesant\Procite Databases\WCS\Articles\Wei SH 1990 02.pdf,XhH9XXF=0vԫ+1521$M_@_46620ng of Ordered and Disordered AlxGa1-xAs and GaAsxSb1-x AlloysQ=s=s=s=ng of Ordered and Disordered AlxGa1-xAs and GaAsxSb1-x AlloysQ=s=s=s=Csj*2<l6p<@UAdesida, I. //Mahajan, A. //Andideh, E. //Khan, M. A. //Olsen, D. T. //Kuznia, J. N. U8}=0sUniv Illinois,Ctr Compound Semicond Microelectr/Urbana//Il/61801 ; Univ Illinois,Dept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/554348}=0sHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasH8}=0s08.2.38}=0s Applied Physics Letters8}=0s Article$M_@_ Nov 15, 1993 $M_@_ 63$M_@_20$M_@_ 2777-2779 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles/Adesida I 1993 11.pdf,=0s=0s=0s*The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixturea<ILinear-Optical and Nonlinear-Optical Properties of Semiconductor ClustersIh=سta<03.5.5h=سta< =Journal of the Optical Society of America B-Optical Physics ;=h=سta< Article$M_4$@_h41989 04$M_4$@_h46$M_4$M_@_56$M_@_7$M_@_^N~Dd;@&Wei, S. H. //Zunger, A. =s&Solar Energy Res Inst/Golden//Co/80401&=s]Band-Gaps and Spin-Orbit-Splitting of Ordered and Disordered AlxGa1-xAs and GaAsxSb1-x AlloysQ=s=s=s=s=s01.3.3 Electron Bandgaps=s "Physical Review B-Condensed Matter"=s Article@_@_v 1989 Feb 15 @_@_v39@_@_v5@_@_v 3279-3304 @_@_v%>\\As01mesant\Procite Databases\WCS\Articles\Wei SH 1989 02.pdf>@_@_v+140@_@_v46630=HoB"USФ=HoB" 1/30/1979 Ф=HoB":CA1104240A1 GB1594656A JP53138688A2 JP57009238B4 US4136928:Ф=HoB"USФ=HoB" 1/30/1979 Ф=HoB":CA1104240A1 GB1594656A JP53138688A2 JP57009238B4 US4136928:Ф=HoB"USФ=HoB" 1/30/1979 Ф=HoB":CA1104240A1 GB1594656A JP53138688A2 JP57009238B4 US4136928:Ф27, No. 4, Aug. 15, 1975, pp. 241-243. Aiki et al., Apl., vol. 29, No. 8, Oct. 15, 1976, pp. 506-508. Wang, IEEE (JQE), vol. QE-13, No. 4, Apr. 1977, pp. 176-186. Campbell et al., IEEE (JQE), vol.53138688A2 JP57009238B4 US4136928:Ф*N~dl33 US4547956 US4675518 US5439647 US5650123 US4809358 US4820655 US4948960 US5081633 US4163953 US4275404 US4349906 US4360921 US4438447 US4439910 US4730330 US4747649 US4879250 US4904036+Ф=HoB"%;\\As01mesant\Procite Databases\WCS\Patents\US04136928__.pdf;Ф=HoB"'G02B 5/14; H01S 3/19Ф=HoB"+30 )Ф=HoB"760;@:Wei, S. H. //Zunger, A. _=XIrb1&Solar Energy Res Inst/Golden//Co/80401&_=XIrb1IRole of D-Orbitals in Valence-Band Offsets of Common-Anion SemiconductorsI_=XIrb102.1.1]=XIrb1]=XIrb1 Physical Review Letters_=XIrb1 Article$M_l\@_Tl 1987 Jul 6 $M_l\@_Tl59$M_l\@_Tl1$M_l\@_Tl144-147$M_l\@_Tl27$M_l\@_Tl%>\\As01mesant\Procite Databases\WCS\Articles\Wei SH 1987 07.pdf>$>h1?ZEGlisson, T. H. //Hauser, J. R. //Littlejohn, M. A. //Williams, C. K. EHHBHEnergy bandgap and lattice-constant contours of iii-v quaternary alloysHHHB01.3.3 Electron BandgapsHHB Journal of Electronic MaterialsHHB 1978HHBN7HHBN1HHBN1-16HHBN%@\\Aeron\Procite Databases\WCS1-16HHBN%@\\Aeron\Procite Databases\WCSO2T\<@Logan, R.A.//Merz, J. L.Ф=HoB"Ф=HoB"Ф=HoB"GOptical integrated circuit including junction laser with oblique mirrorGФ=HoB"10.5.6Ф=HoB"706518Ф=HoB" US4136928 Ф=HoB"USФ=HoB" 1/30/1979 Ф=HoB":CA1104240A1 GB1594656A JP53138688A2 JP57009238B4 US4136928:Ф=HoB"'US3978426 US3996528 US4002997 US4007978'Ф=HoB"Tien et al., Two-Layered Construction of Integrated Optical Circuits . . . ,Applied Physics Letters, vol. 24, No. 11, Jun. 1, 1974. Suematsu et al., IEEE (JQE), vol. QE-11, No. 7, Jul. 1975, pp. 457-460. Reinhart et al., Apl., vol. 27, No. 1, Jul. 1, 1975, pp. 45-47. Hurwitz et al., Apl., vol. 27, No. 4, Aug. 15, 1975, pp. 241-243. Aiki et al., Apl., vol. 29, No. 8, Oct. 15, 1976, pp. 506-508. Wang, IEEE (JQE), vol. QE-13, No. 4, Apr. 1977, pp. 176-186. Campbell et al., IEEE (JQE), vol. QE-13, No. 4, Apr. 1977, pp. 253-255.Ф=HoB""+US4276098 US4297651 US4799225 US4802182 US4860294 US4871224 US5786925 USRE31255 US4470143 US4488307 US4829345 US48386nd Offsets of Common-Anion SemiconductorsI_=XIrb102.1.1]=XIrb1]=XIrb1 Physical Review Letters_=XIrb1 Article$M_l\@_Tl 1987 Jul 6 $M_l\@_Tl59$M_l\@_Tl1$1-16HHBN%@\\Aeron\Procite Databases\WCS^^N~$\t6M_l\@_Tl144-147$M_l\@_Tl27$M_l\@_Tl%>\\As01mesant\Procite Databases\WCS\Articles\Wei SH 1987 07.pdf>$SM_l\@_Tl+110$M_l\@_Tl46650>@ZEGlisson, T. H. //Hauser, J. R. //Littlejohn, M. A. //Williams, C. K. EHHBHEnergy bandgap and lattice-constant contours of iii-v quaternary alloysHHHB01.3.3 Electron BandgapsHHB Journal of Electronic MaterialsHHB 1978HHBN7HHBN1HHBN1-16HHBN%E\\As01mesant\Procite Databases\WCS\Articles\Littlejohn MA 1975 06.pdfEHHBN)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHBN+99HHBNK,Em858HHBN65370Friedrich Schiller Univ,Sekt Phys,Max Wien Pl 1/Ddr-69008x=qbElectron Phonon Interaction in Dielectric Bilayer Systems: Effect of the Electronic Polarizabilitybx=q02.3.2x=q &Physica Status Solidi B-Basic Research&x=q Article@_<,@_$$<1985@_<,@_$$<129@_<,@_$$<2@_<,@_$$<513-530@_<,@_$$<%4\\Aeron\Procite Databases\WCS\Articles/Wendler L.pdf'@_<,@_$$< @_<,@y 9+|p<@[Binari, S. C. //Rowland, L. B. //Kruppa, W. //Kelner, G. //Doverspike, K. //Gaskill, D. K. [8=zt:Ȓ=Usn,Res Lab/Washington//Dc/20375 ; Sfa Inc/Landover//Md/20785=8=zt:Ȓ$Microwave Performance of GaN MESFETs$8=zt:Ȓ09.1.38=zt:Ȓ Electronics Letters8=zt:Ȓ Article$M_@_ Ļ Jul 21, 1994 $M_@_ Ļ 30$M_@_ Ļ15$M_@_ Ļ 1248-1249 $M_@_ Ļ%>\\As01mesant\Procite Databases\WCS\Articles/Binari 1994 07.pdf>8=zt:Ȓ*GaN MESFETs have been fabricated with a 0.25mum thick channel on a high resistivity GaN layer grown by metal organic vapour phase epitaxy. These devices have a transconductance of 20mS/mm. For a 0.7mum gate length device, the measured f(T) and f(max) were 8 and 17GHz, respectively.$M_@_ Ļ+102$M_@_ Ļ,&Solid-State Microwave Devi>ces/ Mesfets&$M_@_ Ļ3860e//France;'=?t5Direct Observation of Macroscopic Charge Quantization5'=?t04.4.1'=?t )Zeie//France;'=?t5Direct Observation of Macroscopic Charge Quantization5'=?t04.4.1'=?t )Zeiircuit formed by a nanoscale tunnel junction in series with a capacitance and a voltage source is the building block of most multi-junctioation5'=?t04.4.1'=?t )Zei4N~t|6;@FWLafarge, P. //Pothier, H. //Williams, E. R. //Esteve, D. //Urbina, C. //Devoret, M. H. W'=?t;Cens,Serv Phys Etat Condense/F-91191 Gif Sur Yvette//France;'=?t5Direct Observation of Macroscopic Charge Quantization5'=?t04.4.1'=?t )Zeitschrift Fur Physik B-Condensed Matter)'=?t Article1$M_|:l<@_d<V|119911$M_|:l<@_d<V|1851$M_|:l<@_d<V|131$M_|:l<@_d<V|1327-3321$M_|:l<@_d<V|1%>\\As01mesant\Procite Databases\WCS\Articles/Lafarge P 1991.pdf,=?t=?t*The circuit formed by a nanoscale tunnel junction in series with a capacitance and a voltage source is the building block of most multi-junction circuits of single electronics. The state of this "single electron box" is entirely determined by the number n of extra electrons on the intermediate "island" electrode between the junction and the capacitance. We have fabricated such a system and measured the charge on the junction capacitance, which is directly related to the average value of n, as a function of the bias voltage using a Fulton-Dolan electrometer. At low temperature, the junction charge followed the e-periodic sawtooth function expected from the theory of macroscopic charge quantization. Strikingly, e-periodic variatio<1?)Stringfellow, G.B.// Hall, Jr.//Howard T.)=XyDMethod for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and mpounds and j^N~608540 ; Mit,Dept Phys/Cambridge//Ma/02139h8=VtZlVLow-Temperature Transport Through a Quantum Dot: the Anderson Model Out of Equilibrium5=VtZl=VtZl=VtZl04.4.2=VtZl Physical Review Lettersh8=VtZl Article$M_>?@_? Apr 26, 1993 $M_>?@_?70$M_>?@_?17$M_>?@_? 2601-2604 $M_>?@_?%>\\As01mesant\Procite Databases\WCS\Articles\Meir Y 1993 04.pdf>$M_>?@_?*OThe infinite-U Anderson model is applied to nonequilibrium transport through a quantum dot containing two spin levels weakly coupled to two leads. At low temperatures, the Kondo peak in the equilibrium density of states is split upon the application of a voltage bias. The split peaks, one at the chemical potential of each lead, are suppressed by nonequilibrium dissipation. In a magnetic field, the Kondo peaks shift away from the chemical potentials by the Zeeman energy, leading to an observable peak in the differential conductance when the nonequilibrium bias equals the Zeeman energy.O$M_>?@_?+179$M_>?@_?,4Ce Compounds/ Conductance/ Impurity/ States/ Systems4$M_>?@_?47500j.=1?0H?Petroff, P. M. //Miller, R. C. //Gossard, A. C. //Wiegmann, W. ?+=sܫ'Bell Tel Labs Inc/Murray Hill//Nj/07974'+=ssܫ06.3.2+=s#SN~ |66<@)Stringfellow, G.B.// Hall, Jr.//Howard T.)=XyDMethod for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system=XyD06.4=XyD250060=XyD US4147571 =XyDUS=XyD4/3/1979=XyD-DE2830081A1 GB1593905A JP54039387A2 US4147571-=XyD;US3226270 US3338761 US3364084 US3721583 US3802967 US3867202;=XyDRai-Choudhury et al., Selective Growth . . . Gallium Arsenide,J. Electrochem. Soc., vol. 118, No. 1, Jan. 1971, pp. 107-110. Weiner, M. E., Si Contamination . . . GaAs and GaP.IBID vol. 119, No. 4, Apr. 1972, pp. 496-504. DiLorenzo, J. V., Vapor Growth . . . GaAs . . . Layers,J. Crystal Growth 17 (1972), pp. 189-206. Pogge et al., Doping Behavior of Silicon . . . III-V . . . Films.Ibid., 31 (1975), pp. 183-189. Enstrom et al., Influence of Gas Phase . . . GaAs P-N Junctions,J. Electrochem. Soc., vol. 121, Nov. 1974, pp. 1516-1523.=XyD"US4504331 US4524090 US4772486 US4777022 US4911102 US4920067 US5057183 US5135607 US5252512 US5334251 US5685905 US5695567 US4596208 US4699688 US4855249 US4888303 US5211796 US5212394 US5972743 US6030661 US4891091 US4904616 US5746834 US5827365 US4989541 US5036022 US5377616 US5400740 US5704985 US5743956 US5160543 US5178904 US5478775 US5490228 US4250205 US4488914 US4735822 US4767494 US5136978 US5147498 US6039812 US6084215 US6162298=XyD%;\\As01mesant\Procite Databasarbara//Ca/93106 ; Nec Corp Ltd,Res Inst/Princeton//Nj/^N~6"++$M_46@_|6"+*'A Landauer formula for the current through a region of interacting electrons is derived using the nonequilibrium Keldysh formalism. The case of proportionate coupling to the left and right leads, where the formula takes an especially simple form, is studied in more detail. Two particular examples where interactions give rise to novel effects in the current are discussed: In the Kondo regime, an enhanced conductance is predicted, while a suppressed conductance is predicted for tunneling through a quantum dot in the fractional quantum Hall regime.'+$M_46@_|6"++184+$M_46@_|6"+,qUniversal Conductance Fluctuations/ Size Scaling Anderson Localization/ Quantum Oscillations/ Hall Length/ State4sq+$M_46@_|6"+47490;@(Meir, Y. //Wingreen, N. S. //Lee, P. A. (h8=VtZlUniv Calif Santa Barbara,Dept Phys/Santa Barbara//Ca/93106 ; Nec Corp Ltd,Res Inst/Princeton//Nj/08540 ; Mit,Dept Phys/Cambridge//Ma/02139h8=VtZlVLow-Temperature Transport Through a Quantum Dot: the Anderson Model Out of Equilibrium5=VtZl=VtZl=VtZl04.4.2=VtZl Physical Review Lettersh8=VtZl Article$M_>?@_? Apr 26, 1993 $M_>?@_?70$M_>?@_?17$M_>?@_? 2j.=1?0H?Petroff, P. M. //Miller, R. C. //Gossard, A. C. //Wiegmann, W. ?+=sܫ'Bell Tel Labs Inc/Murray Hill//Nj/07974'+=s*ZN~6;@:3Wingreen, N. S. //Jacobsen, K. W. //Wilkins, J. W. 3PQ=ks^Cornell Univ,Atom & Solid State Phys Lab/Ithaca//Ny/14853 ; Tech Univ Denmark,Appl Phys Lab/Dk-2800 Lyngby//Denmark ; Ohio State Univ,Dept Phys/Columbus//Oh/43210PQ=ks^*Inelastic-Scattering in Resonant Tunneling*PQ=ks^04.1.1.5(o=ks^ "Physical Review B-Condensed Matter"PQ=ks^ ArticleJ$M_SU@_UJ 1989 Dec 15 J$M_SU@_UJ40J$M_SU@_UJ17J$M_SU@_UJ 11834-11850 J$M_SU@_UJ%C\\As01mesant\Procite Databases\WCS\Articles\Wingreen NS 1989 12.pdf,J$M_SU@_UJJ$M_SU@_UJ+125J$M_SU@_UJ47930h[NResonant Tunneling With Electron-Phonon Interaction: an Exactly Solvable ModelN/=x sh[04.1.1.5=x sh[ Physical Revieh[NResonant Tunneling With Electron-Phonon Interaction: an Exactly Solvable ModelN/=x sh[04.1.1.5=x sh[ Physical Revie@_|Hjp\12$M_FH@_|Hjp\ 1396-1399 $M_FH@_|Hjp\%>\\Aeron\Procite Databases\WCS\Articles\Wingreen NS 1988 09.pdf'$M_FH@_|Hjp\_$M_FH@_|Hjp\+154$M_FH@_|Hjp\47940;]=?b Wood, T. H.  #=qP2At&T Bell Labs,Crawford Hill Lab/Holmdel//Nj/077332#=qP1Multiple Quantum Well (Mqw) Wave N~ 6wn Hts//Ny/105987Ћ=(vԫ8Unpinned (100) GaAs-Surfaces in Air Using Photochemistry8Ћ=(vԫ08.2.1Ћ=(vԫ Applied Physics LettersЋ=(vԫ Article$M_ 4@_,  1986 Feb 17=(vԫ=(vԫ48$M_ 4@_, 7$M_ 4@_, 475-477$M_ 4@_, %A\\As01mesant\Procite Databases\WCS\Articles\Offsey SD 1986 02.pdf,XhH9XXF=(vԫ+171$M_ 4@_, 47550;@QRosenberg, J. J. //Benlamri, M. //Kirchner, P. D. //Woodall, J. M. //Pettit, G.D.MЮ=Ho Ю=Ho bBrown Univ,Div Engn/Providence//Ri/02912 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598bЮ=Ho 9An In0.15ga0.85 As/GaAs Pseudomorphic Single Quantum Well9Ю=Ho 03.1.5Ю=Ho  IEEE Electron Device LettersЮ=Ho  Article$M_@n Keyes, R. W.  =t>@TThe effects of elastic deformation on the electrical conductivity of semiconductorsT=t>@E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE=t>@ 9Solid State Physics-Advances in Research and Applications9=t>@ 196069$M_$9\?9@_T?9>T691169$M_$9\?9@_T?9>T69149-22169$M_$9\?9@_T?9>T69%=\\As01mesant\Procite Databases\WCS\Articles\Keyes RW 1960.pdf,X=t>@X=t>@)0Copyright Statement: (c)2003 Inst. For Sci. Info069$M_$9\?9@_T?9>T69+148>1?x+Lei, X. L. //Horing, N. J. M. //Cui, H. L. +HHBHTheory of negative differential conductivity in a superlattice minibandHHHB04.3.2HHB Physical Review LettersHHB 1991HHBN66HHHx~ g69$M_$9\?9@_T?9>T69,A1960wp0240000369$M_$9\?9@_T?9>T6965390>@x+Lei, X. L. //Horing, N. J. M. //Cui, H. L. +HHBHTheory of negative differential conductivity in a superlattice minibandHHHB04.3.2HHB Physical Review LettersHHB 1991HHBN66HHBN25HHBN 3277-3280 HHBN%>\\As01mesant\Procite Databases\WCS\Articles\Lei XL 1991 06.pdf>HHBN)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHBN*qBloch electron conductivity perpendicular to the layers of a superlattice (period d) is evaluated using an extension of the balance-equation approach [x. L. Lei and c. S. Ting, phys. Rev. B 32, 1112 (1985)] to narrow-band transport. The perpendicular peak drift velocity upsilon-p and the critical field e(c), at which the drift velocity peaks, are analyzed as functions of miniband width. Our theoretical prediction that e(c)d increases with decreasing miniband width agrees well with the data of sibille et al. [Phys. Rev. Lett. 64, 52 (1990)], even for the samples of narrowest miniband width in their experiment.qHHBN+110HHBN,lGaas/Alas Superlattices/ Semiconductor Superlattice/ Electric-Field/ Transport/ Conductance/ Velocity/ Ft113lHHBN65400;=?Yablonovitch, E. //Cody, G. D. =p6Exxon Res & Engn Co,Corp Res Sci Labs/Linden//Nj/070366=p@Intensity-]M}l Corp,Musashino Elect Communs#=8Ny@XKModification of Spontaneous Emission Rate in Planar Microcavity StructuresK#=8Ny@X05.2.2#=8Ny@X Physical Review A#=8Ny@X#=8Ny@X Article$M_D4@_,.D1991$M_D4@_,.D44$M_D4@_,.D1$M_D4@_,.D669-681$M_D4@_,.D%<\\As01mesant\Procite Databases\WCS\Articles/Bjork G 1991.pdf+$M_D4@_,.D $M_D4@_,.D$M_D4@_,.D*The spontaneous emission rate and radiation pattern for a thin quantum well sheet enclosed by a one-dimensional dielectric microcavity have been calculated. By placing the sheet in the node (antinode) position of the cavity standing wave, the spontaneous emission in the direction normal to the sheet will be decreased (enhanced). In the former case the theory predicts that the spontaneous lifetime can be increased more than a factor of 10. In z;1?R0hTsuchiya, M. //Gaines, J. M. //Yan, R. H. //Simes, R. J. //Holtz, P. O. //Coldren, L. A.//Petroff, P. M.h,=htrUniv Calif Santa Barbara,Dept Elect & Comp Engn/Santa ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106r,=htXOptical Anisotropy in a Quantum-Well-Wire Array With Two-Dimensional Quantum ConfinementX,=ht03.4.3,=ht,=ht Physical Review Letters,=ht^N~;@Yablonovitch, E. //Cody, G. D. =p6Exxon Res & Engn Co,Corp Res Sci Labs/Linden//Nj/070366=p@Intensity Enhancement in Textured Optical Sheets for Solar-Cells@=p11.3.8 =p %IEEE Transactions on Electron Devices%=p Article$M_\d@_\\1982$M_\d@_\\29$M_\d@_\\2$M_\d@_\\300-305$M_\d@_\\%D\\As01mesant\Procite Databases\WCS\Articles/Yablonovitch 1982 02.pdfD$M_\d@_\\+112$M_\d@_\\48060;@43Bjork, G. //Machida, S. //Yamamoto, Y. //Igeta, K. 3#=8Ny@XsRoyal Inst Technol,Dept Microwave Engn/S-10044 Stockholm ; Nippon Telegraph & Tel Publ Corp,Musashino Elect Communs#=8Ny@XKModification of Spontaneous Emission Rate in Planar Microcavity StructuresK#=8Ny@X05.2.2z;1?R0hTsuchiya, M. //Gaines, J. M. //Yan, R. H. //Simes, R. J. //Holtz, P. O. //Coldren, L. A.//Petroff, P. M.h,=htrUniv Calif Santa Barbara,Dept Elect & Comp Engn/Santa ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106r,=htXOptical Anisotropy in a Quantum-Well-Wire Array With Two-Dimensional Quantum ConfinementX,=ht03.4.3,=ht,=ht Physical Review Letters,=ht 12370+300$M_@_XD< 12370BrN~6+s on the formation of the Schottky barrier, Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-dimensional structures appear on the semiconductor surface presenting an insulating behavior. For depositions around a metal monolayer, a Mott metal-insulator transition appears; then, the interface Fermi energy is pinned by the metallic density of states at the position determined by the semiconductor charge neutrality level. This situation defines the Schottky barrier height of a thick-metal overlayer.$M_$@_ J$+15$M_$@ _ J$,Scanning-Tunneling-Microscopy/ Electron-Emission Microscopy/ Gaas(110) Surface/ Photoelectron-Spectroscopy/ Compound Semiconductors/ Si(001)-(2x1) Surface/ Interface States/ Charge-Tran Jsfer/ Gap States/ X 1-K$M_$@_ J$62280of Vacuum Science & Technology B(:=`_p> Article)$M_24@_40)1983)$M_24@_40)1)$M_24of Vacuum Science & Technology B(:=`_p> Article)$M_24@_40)1983)$M_24@_40)1)$M_24of Vacuum Science & Technology B(:=`_p> Article)$M_24@_40)1983)$M_24@_40)1)$M_24of Vacuum Science & Technology B(:=`_p> Article)$M_24@_40)1983)$M_24@_40)1)$M_24@pN~6the latter case both theory and experiments confirm that such a simple structure can couple a substantial amount (30-90 %) of the spontaneous emission into the cavity resonant mode. In both cases, however, theory predicts that the spontaneous emission lifetime will increase for structures without guided modes.$M_D4@_,.D+185$M_D4@_,.D,  @Cavity/ Atoms $M_D4@_,.D48180z;@R0hTsuchiya, M. //Gaines, J. M. //Yan, R. H. //Simes, R. J. //Holtz, P. O. //Coldren, L. A.//Petroff, P. M.h,=htrUniv Calif Santa Barbara,Dept Elect & Comp Engn/Santa ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106r,=htXOptical Anisotropy in a Quantum-Well-Wire Array With Two-Dimensional Quantum ConfinementX,=ht03.4.3,=ht,=ht Physical Review Letters,=htM<[?H Flores, F. PE=n~̬BUniv Autonoma Madrid,Dept Fis Mat Condensada/E-28049 Madrid//SpainBPE=n~̬_Alkali-Atom Adsorption on Semiconductor Surfaces : Metallization and Schottky-Barrier Formation_PE=n~̬02.2H=n~̬ Surface Review and LettersPE=n~̬ Review$M_$@_ J$Aug 1995$M_$@_ J$2$M_$@_ J$4$M_$@_ J$513-537$M_$@_ J$137$M_$@_ J$*Alkali metals deposited on weakly ionic semiconductors are neither reactive noenting an insulat6f6*2=ptK@LMetallic P-Type GaAs and GaAlAs Grown by Metalorganic Molecular-Beam EpitaxyL=ptK@06.4.4=ptK@ Journal of Crystal Growth=ptK@ Article/9$M_D894:9@_,:96D/91989/9$M_D894:9@_,:96D/998/9$M_D894:9@_,:96D/91-2/9$M_D894:9@_,:96D/9167-173/9$M_D894:9@_,:96D/9%=\\As01mesant\Procite Databases\WCS\Articles\/Konagai 1989.pdf,@=nptK@@=ptK@+132/9$M_D894:9@_,:96D/948870j.=@VnMiller, D. A. B. //Chemla, D. S. //Damen, T. C. //Gossard, A. C. //Wiegmann, W. //Wood, T. H. //Burrus, C. A. npAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; at&T Bell Labs/Crawford Hill//Nj/07733pYNovel Hybrid Optically Bistable Switch: the Quantum Well Self-Electro-Optic Effect DeviceY11.4.2 Applied Physics Letters Article198m445113-15%<\\As01mesant\Procite Databases\WCS\Articles/Coon DD 1984.pdf<+4037510Oxford//England ; Bell Commun Res Inc/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974xp=s̬_Time-Resolved Photoluminescence of Two-Dimensional Hot CarriersOxford//England ; Bell Commun Res Inc/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974xp=s̬_Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers ~2+6>@VOhno, Y. //Young, D. K. //Beschoten, B. //Matsukura, F. //Ohno, H. //Awschalom, D. D. VHHBKElectrical spin injection in a ferromagnetic semiconductor heterostructureKHHBE01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEHHB NatureHHB Dec 16 1999 HHB8402HHB86763HHB8790-792HHB8%>\\As01mesant\Procite Databases\WCS\Articles\Ohno Y 1999 12.pdf>HHB8)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB8*Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of 'spintronics: wherein the classical manipulation of electronic spin in semiconductor devices gives rise to the possibility of reading and writing non-volatile information through magnetism(1,2) moreover, the ability to preserve coherent spin states in conventional semiconductors' and quantum dots(4),ay eventually enable quantum computing in the solid state(5,6). Recent studies have shown that optically excited electron spins can retain their coherence over distances exceeding 100 micrometres (ref. 7). But to inject spin-polarized carriers electrically remains a formidable challenge(8,9), here we report the fabrication of all-semiconductor,;1?TKonagai, M. //Yamada, T. //Akatsuka, T. //Saito, K. //Tokumitsu, E. //Takahashi, K. T=ptK@2Tokyo Inst Technol,Dept Elect & Electr Engn,2-12-1Wiegmann, W. //Wood, T. H. //Burrus, C. A. npAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj^N~3*6>@#Bernard, M. G. A. //Duraffourg, G. #HHB"Laser conditions in semiconductors"HHB10.1HHB Physica Status SolidiHHB 1961HHBg1HHBg7HHBg699-703HHBg%@\\As01mesant\Procite Databases\WCS\Articles\Bernard MGA 1961.pdf@HHBg)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHBg+114HHBg,A1961wz71100002HHBg65420;@Yamada, M. //Sakuda, K. 4Technol Univ Nagaoka,Dept Elect Engn/Nagaoka/Niigata4cAnalysis of Almost-Periodic Distributed Feedback Slab Wave-Guides Via a Fundamental Matrix Approachc05.3.1 Applied Optics Article19872616 3474-3478 %=\\As01mesant\Procite Databases\WCS\Articles/Yamada M 1987.pdf=+12750080x*eȒ Article!$M_"!|$!@_t$!z!1983!$M_"!|$!@_t$!z!19!$M_"!|$!@_t$!z!1!$M_"!|$!@_t$!z!x*eȒ Article!$M_"!|$!@_t$!z!1983!$M_"!|$!@_t$!z!19!$M_"!|$!@_t$!z!1!$M_"!|$!@_t$!z!x*eȒ Article!$M_"!|$!@_t$!z!1983!$M_"!|$!@_t$!z!19!$M_"!|$!@_t$!z!1!$M_"!|$!@_t$!z!/_ <~ R*;@Yokoyama, H. //Shiba, H. @8=xoȒ;Univ Tokyo,Inst Solid State Phys,Minato Ku/Tokyo 106//Japan;@8=xoȒ4Variational Monte-Carlo Studies of Hubbard-Model .1.4@8=xoȒ02.4.1@8=xoȒ (Journal of the Physical Society of Japan(@8=xoȒ Article$M_$@_ $56$M_$@_ $4$M_$@_ $ 1490-1506 $M_$@_ $%B\\As01mesant\Procite Databases\WCS\Articles/Yokoyama H 1987 04.pdfB$M_$@_ $+146$M_$@_ $51470;@ Zunger, A.  88=PvsȪRSolar Energy Res Inst/Golden//Co/80401 ; Univ Colorado,Dept Phys/Boulder//Co/80309R88=PvsȪBAl on GaAs(110) Interface: Possibility of Adatom Cluster FormationB88=PvsȪ06.3.1*88=PvsȪ88=PvsȪ "Physical Review B-Condensed Matter"88=PvsȪ Article$M_td@_\t 1981 Oct 15 $M_td@_\t24$M_td@_\t8$M_td@_\t 4372-4391 $M_td@_\t%@\\As01mesant\Procite Databases\WCS\Articles\Zunger A 1981 10.pdf@$M_tOd@_\t+184$M_td@_\t51670M<1?R Duke, C. B. PE=sh̬EXerox Corp,Webster Res Ctr,800 Phillips Rd,0114-38d/Webster//Ny/14580EPE=sh̬YReconstructionq1~6ronics#x=xj  Article@_dT@_L d1980@_dT@_L d16@_dT@_L d10@_dT@_L d 1073-1081 @_dT@_L d%B\\As01mesant\Procite Databases\WCS\Articles/Yamamoto Y 1980 10.pdfB=xj +1473@_dT@_L d50510;@v'Yamamoto, Y. //Imoto, N. //Machida, S. '`=x+q,_7Nippon Telegraph & Tel Publ Corp,Musashino Elect Commun7`=x+q,_cAmplitude Squeezing in a Semiconductor-Laser Using Nondemolition Measurement and Negative Feedbackc`=x+q,_10.4.3`=x+q,_ Physical Review a`=x+q,_ Article<$M_ directions in the surface. Wurtzite materials exhibit two cleavage faces, both consisting of equal numbers of anion and cation species. The (10 (1) over bar 0) cleavage surfaces consist of isolated anion-cation dimers back bonded to the layer beneath whereas the(11 (2) over bar 0) surfaces consist of anion-cation chains, analogous to those on zincblende (110) but with four rather than two inequivalent atoms per surface unit cell. All three surfaces exhibit reconstructions which do not alter the symmetry of the surface unit cell but which lead to large (approximate to 1 Angstrom) deviations of the positions of the atomic species in the uppermost layer(s) from those in the truncated bulk solid. These reconstructed surface geometries have been determined quantitatively for the (110) surfaces of zincblende struce atomic species in the uppermost layer(s) from those in the truncated bulk solid. These reconstructed surface geometries have been determined quantitatively for the (110) surfaces of zincblende struc^N~, ture AlP, AlAs, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe and CdTe; the (10 (1) over bar 0) surfaces of wurtzite structure ZnO and CdSe; and the (11 (2) over bar 0) surfaces of CdSe. Theoretic al predictions of these reconstructed geometries have been given which are in either quantitative or semiquantitative correspondence with the experimentally determined structures. Analysis of the tren ds exhibited by the members of each class of cleavage surface and comparison thereof with theoretical predictions permit the extraction from these results of generalizations characteristic of novel ty pes of surface chemical bonding. The most important of these is the notion that for each class of surface the atomic geometries are approximately ''universal'' when their coordinates are properly scal ed with the bulk lattice constant. A quantitative description of this result is presented which reveals that extensions of the concepts of inorganic molecular coordination chemistry are required to predict the cleavage-surface atomic geometries and electronic structures of binary tetrahedrally coordinated compound semiconductors.x$M_@_Tx+14x$M_@_Tx,Energy-Electron-Diffraction/ Iii-V-Semiconductors/ Unoccupied Surface-States/ Scanning Tunneling Microscopy/ Angle-Resolved Photoemission/ Zinc-Oxide Surfaces/ Znse 110 Surface/ Atobmic Geometry/ Dynamical Analysis/ Sb Overlayersx$M_@_Tx62290ya 46401//Japan ; Kyushu Univ 39,Dept Mat Sci & Technol/Kasuga/Fukuoka 816/Japan=pzHGrowth-Mechanism of GaN Grown on Sapphire With AlN Buffer Layer by MOVPEHya 46401//Japan ; Kyushu Univ 39,Dept Mat Sci & Technol/Kasuga/Fukuoka 816/Japan=pzHGrowth-Mechanism of GaN Grown on Sapphire With AlN Buffer Layer by MOVPEH(N~$6p<@nZHiramatsu, K. //Itoh, S. //Amano, H. //Akasaki, I. //Kuwano, N. //Shiraishi, T. //Oki, K. Z=pzNagoya Univ,Dept Elect,Furo Cho,Chikusa Ku/Nagoya 46401//Japan ; Kyushu Univ 39,Dept Mat Sci & Technol/Kasuga/Fukuoka 816/Japan=pzHGrowth-Mechanism of GaN Grown on Sapphire With AlN Buffer Layer by MOVPEH=pz07.5.3=pz Journal of Crystal Growth=pz Article$M_@_$Dec 1991$M_@_$Թ 115$M_@_$Թ1-4$M_@_$Թ628-633$M_@_$Թ%>\\As01mesant\Procite Databases\WCS\Articles/Hiramatsu 1991.pdf>=pz*ETEM (transmission electron microscopy) as well as SEM was carried out to clarify the growth mechanism of GaN grown by MOVPE on a sapphire (alpha-Al2O3) substrate with an AlN buffer layer. Cross-sectional TEM has revealed that GaN has many defects near the GaN/AlN interface, composed of columnar fine crystals and trapezoid crystals, but the defect density decreases abruptly for the layer of GaN thicker than about 300 nm. From the fine structure of the GaN/AlN interface, a new growth mechani>h1?bO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOc=HoBPankove, J. I. c=HoBc=HoBc=HoB#Optical Processes in Semiconductors#c=HoBNew York7$M_|@lB@_dB |71991j$lB@_dB |7t^N~<6d-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.$M_|@_t+128$M_|@_t,mGaas/ GaN/ Gaasn/ Alloy Semiconductor/ Bandgap/ Photoluminescence/ Absorption/ Nitrogen Doping/ Quantum-Wellsm$M_|@_t4120>@DNathan, M. I. //Dumke, W. P. //Burns, G. //Dill, F. H. //Lasher, G. D)=t88Stimulated emission of radiation from gaas p-n junctions8)=t810.1)=t8 Applied Physics Letters)=t8 1962$M_@_01$M_@_03$M_@_062-64$M_@_0%>\\As01mesant\Procite Databases\WCS\Articles/Nathan MI 1962.pdf,=t8=t8)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_@_0+270$M_@_0I,A1962we12200006$M_@_065450959$M_99@_9NN9385-3889$M_99@_9NN9%2\\Aeron\Procite Databases\WCS\Articles\Hall RN.pdf'X*=tM@ 959$M_99@_9NN9385-3889$M_99@_9NN9%2\\Aeron\Procite Databases\WCS\Articles\Hall RN.pdf'X*=tM@ 959$M_99@_9NN9385-3889$M_99@_9NN9%2\\Aeron\Procite Databases\WCS\Articles\Hall RN.pdf'X*=tM@ 3wg287000099$M_!99@_9NN965460,\64=8lqLSemiconductorsC=8lqLNew Yorkj$M_su@_uuj Macmillan j$M_su@_uuj1991j$SM_su@_uuj%Nonej$M_su@_uuj65900p<@!Weyers, M. //Sato, M. //Ando, H. !H=`p(ZNippon Telegraph & Tel Publ Corp,Musashino Elect Commun Lab,Basic Res Labs/Musashino/TokyoZH=`p(JRed Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJH=`p(01.3.3 Electron BandgapsH=`p( 2Japanese Journal of Applied Physics Part 2-Letters2H=`p( Article$M_|@_t Jul 1, 1992 $M_|@_t 31$M_|@_t7a$M_|@_t L853-L855 $M_|@_t%A\\As01mesant\Procite Databases\WCS\Articles\Weyers M. 1992 07.pdfAH=`p(*We present the first report on the optical properties of dilute GaAS1-xNx alloys (0@Burns, G. //Nathan, M. I. h=سtH_<P-n junction lasersh=سtH_<10.1h=سtH_< Proceedings of the IEEEh=سtH_< 1964$M_4$@_^452$M_4$@_^47$M_4$@_^4770-794$M_4$@_^4$M_4$@_^4%<\\As01mesant\Procite Databases\WCS\Articles/Burns G 1963.pdf<$M_4$@_^4)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_4$@_^4+122$M_4$@_^4,A19649672b00010$M_4$@_^465480X=(o <08.1.2X=(o < Journal of Applied PhysicsX=(o < 1964$M_ l@_d  35$M_ l@_d  2$M_ l@_d  379-397X=(o <X=(o <%7\\Aeron\Procite Databases\W @p~ 5DT>@Hall, R. N. //Racette, J. H. X=(o <_Diffusion + solubility of copper in extrinsic + intrinsic germanium silicon + gallium arsenide_X=(o <08.1.2X=(o < Journal of Applied PhysicsX=(o < 1964$M_ l@_d  35$M_ l@_d  2$M_ l@_d  379-397X=(o <X=(o <%<\\As01mesant\Procite Databases\WCS\Articles\Hall RN 1964.pdf<$M_ l@_d  )0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_ l@_d  +484$M_ l@_dO  ,A19643797b00022$M_ l@_d  65490R)=@'Craford, Magnus George//Bailey, Paul T.'4= w 5Integrated semiconductor light-emitting display array54= w 12.4.24= w Monsanto Company4= w 7594164= w  US3947840 4= w US4= w  3/30/1976 4= w "CA1050644A1 JP51048992A2 US3947840"4= w mUS3388292 US3617823 US3668688 US3737704 US3781515 US3783353 US3807036 US3807037 US3813587 US3817798 US3846193m4= w "qUS3997907 US4021838 US4048632 US4086514 US4163920 US4167016 US4181405 US4183039 US4198251 US4199385 US4211586 US4229736 US4303931 US4644342 US4697202 US4703219 US4831395 US4851824 US4916530 US4929515 US4941004 US4942392 US5037507 US5126859 US5184114 US5206629 US522EuN~ L\5823 US5309151 US5339090 US5369416 US5482896 US5515068 US5673058 US5973396 US6168969 US6400008 US6414662q4= w %;\\As01mesant\Procite Databases\WCS\Patents\US03947840__.pdf;4= w ' G08B 5/36 4= w +374= w 63960R)=@&Decker, David Richard//Omori, Masahiro&=st2Through-substrate source contact for microwave FET2=st08.2.4=stVarian Associates=st605045=st US3986196 =stUS=st 10/12/1976 =stjCA1057411A1 DE2629203A1 DE2629203C2 FR2316742A1 FR2316742B1 GB1547463A JP52014385A2 JP61018351B4 US3986196j=st US3787252 =st"{US4136352 US4141021 US4156879 US4339870 US4348253 US4374394 US4376287 US4380022 US4403241 US4445978 US4498093 US4751562 US4789823 US4807022 US4818724 US4956697 US4970578 US4998160 US5138439 US5166097 US5200641 US5202752 US5225707 US5260169 US5324981 US5362678 US5432357 US5434094 US5455448 US5510655 US5517053 US5596171 US5665649 US6002147 US6083782 US6137129 US6297531 US6404041{=st%;\\As01mesant\Procite Databases\WCS\Patents\US03986196__.pdf;=st'."H01L 29/80, H01L 29/6, H01L 23/48, H01L 23/2".=st+38=st63970p<@5?'Vel, L. //Demazeau, G. //Etourneau, J. '=?t>Cnrs,Chim Solide Lab,351 Cours Liberat/F-33405 Talence//France>=?t` PTdp<@'Vel, L. //Demazeau, G. //Etourneau, J. '=?t>Cnrs,Chim Solide Lab,351 Cours Liberat/F-33405 Talence//France>=?tMCubic Boron-Nitride : Synthesis ; Physicochemical Properties and ApplicationsM=?t12.0=?t QMaterials Science and Engineering B-Solid State Materials for Advanced TechnologyQ=?t Article{$M_|l@_dx|{1991{$M_|l@_dx|{ 10{$M_|l@_dx|{2{$M_|l@_dx|{149-164{$M_|l@_dx|{%:\\As01mesant\Procite Databases\WCS\Articles/Vel L 1991.pdf,{$M_|l@_dx|{{$M_|l@_dx|{*A review, with 112 references. is given of the different ways to prepare cubic boron nitride (BN). The different crystal forms as well as the phase diagram of BN are described. The physical and chemical properties and the correlated industrial or potential applications are shown.{$M_|l@_dx|{+1z;1?~13Demel, T. //Heitmann, D. //Grambow, P. //Ploog, K. 3.=`/wB7Max Planck Inst Festkorperforsch,Heisenbergstr 1/W-70007.=`/wBGNonlocal Dynamic-Response and Level-Crossings in Quantum-Dot StructuresG.=`/wB03.5.2.=`/wB Physical Review Letters.=`/wB Article$M_t@_l 1990 Feb 12 $M_t@_l64$M_t@_l7 4/24/1979 US3950187 US4151008 US4229232^N~~\601{$M_|l@_dx|{,High-Pressure Synthesis/ Electronic-Structure/ Ain Additions/ Ground-State/ Bn/ Growth/ System/ Temperature/ Band/ Semiconductors{$M_|l@_dx|{4230z;@~13Demel, T. //Heitmann, D. //Grambow, P. //Ploog, K. 3.=`/wB7Max Planck Inst Festkorperforsch,Heisenbergstr 1/W-70007.=`/wBGNonlocal Dynamic-Response and Level-Crossings in Quantum-Dot StructuresG.=`/wB03.5.2.=`/wB Physical Review Letters.=`/wB Article$M_t@_l 1990 Feb 12 $M_t@_l64$M_t@_l7$M_t@_l788-791$M_t@_l%?\\As01mesant\Procite Databases\WCS\Articles\Demel T 1990 02.pdf?$M_t@_l+266,$M_t@_l12670US4437139 US4980563 US5017508 US5897346 US5966626 US6303446 US4335362 US4339285 US5227328 US5252498 US4443493 US4450358 US5048163 US5079187 US5620906 US5739982 US6090671 US6174757 US4482395 US4495255 US4437139 US4980563 US5017508 US5897346 US5966626 US6303446 US4335362 US4339285 US5227328 US5252498 US4443493 US4450358 US5048163 US5079187 US5620906 US5739982 US6090671 US6174757 US4482395 US4495255 US4437139 US4980563 US5017508 US5897346 US5966626 US6303446 US4335362 US4339285 US5227328 US5252498 US4443493 US4450358 US5048163 US5079187 US5620906 US5739982 US6090671 US6174757 US4482395 US4495255 US4437139 US4980563 US5017508 US5897346 US5966626 US6303446 US4335362 US4339285 US5227328 US5252498 US4443493 US4450358 US5048163 US5079187 US5620906 US5739982 US6090671 US6174757 US4482395 US4495255 tUSxyBr>n6tR)=@Lim, Mahn-Jickxy=s!t!Method of forming silicon dioxide!xy=s!t08.3.1=s!tWestern Electric Company, Inc.xy=s!t706518xy=s!t US4002512 xy=s!tUSxy=s!t 1/11/1977 xy=s!t US4002512 xy=s!tUSR28028 USR28029 US3117838 US3212922 US3331716 US3404451 US3459673 US3642521 US3659915 US3669693 US3737292 US3737293 US3782914xy=s!tuSteinmeyer et al., "Successive Growth of Si and SiO.sub.2 -- etc.", J. Electrochem. Soc., Feb. 1964, vol. III, No. 2, pp. 206-209.; Tung et al., "The Deposition of Oxide on Silicon --- etc.", Trans. of Met. Soc. of AIME, vol. 233, Mar. 1965, pp. 572-577.; Chu et al., "Silica Films by the Oxidation of Silane", Trans. of Met. Soc. of AIME, vol. 242, Mar. 1968, pp. 532-538.uxy=s!t"IUS4083708 US4184860 US4194934 US4217375 US4239811 US4254161 US4275094 US4293589 US429R)=1?1Chang, L. //Esaki, L.//Sai-Halasz, George Anthony=t^=t^=t^Semiconductor memory devices=t^04.1.2=t^+International Business Machines Corporation+=t^280070=t^ US4103312 =t^US=t^ 7/25/1978 =t^DE280379=t^ 7/25/1978 =t^DE280379^N~ml6ilane", Trans. of Met. Soc. of AIME, vol. 242, Mar. 1968, pp. 532-538.uxy=s!t"IUS4083708 US4184860 US4194934 US4217375 US4239811 US4254161 US4275094 US4293589 US4293590 US4371587 US4402570 US4564378 US4631199 US4781740 US4787691 US4789642 US4810673 US4908333 US5122847 US5314847 US5354715 US5525550 US5755886 US5851871 US5871811 US5879574 US5968587 US6019848 US6109065 US6110556 US6114216 US6177134 US6340628Ixy=s!t%;\\As01mesant\Procite Databases\WCS\Patents\US04002512__.pdf;xy=s!t' H01L 21/18_ xy=s!t+33xy=s!t63980R)=@1Chang, L. //Esaki, L.//Sai-Halasz, George Anthony=t^=t^=t^Semiconductor memory devices=t^04.1.2=t^+International Business Machines Corporation+=t^280070=t^ US4103312 =t^US=t^ 7/25/1978 =t^DE280379>h1?!Vanroosbroeck, W. //Shockley, W. !x&=sBPhoton-radiative recombination of electrons and holes in germaniumBx&=sO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOx&=s Physical Reviewx&=s 1954n$M_Dw4y@_,y*Dn94n$M_Dw4y@_,y*Dn6n$M_Dw4y@_,y*Dn 1558-1560 n$M_Dw4y@_,y*Dn%?\\Aeron\Procite Databases\%U~o66\US04103312__.pdf;=t^' H01L 29/161 =t^+28=t^63990>@!Vanroosbroeck, W. //Shockley, W. !x&=sBPhoton-radiative recombination of electrons and holes in germaniumBx&=sO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOx&=s Physical Reviewx&=s 1954n$M_Dw4y@_,y*Dn94n$M_Dw4y@_,y*Dn6n$M_Dw4y@_,y*Dn 1558-1560 n$M_Dw4y@_,y*Dn%D\\As01mesant\Procite Databases\WCS\Articles/VanRoosbroeck W 1954.pdf,n$M_Dw4y@_,y*Dnn$M_Dw4y@_,y*Dn)0Copyright Statement: (c)2003 Inst. For Sci. Info0n$M_Dw4y@_~,y*Dn+414n$M_Dw4y@_,y*Dn,A1954ub48300017n$M_Dw4y@_,y*Dn65500 $M_L<@_4L 19 $M_L<@_4L 2 $M_L<@_4L 459-514!=0o<!=0o $M_L<@_4L 19 $M_L<@_4L 2 $M_L<@_4L 459-514!=0o<!=0o $M_L<@_4L 19 $M_L<@_4L 2 $M_L<@_4L 459-514!=0o<!=0o(=s't US4128733 (=s'tUS(=s't 12/5/1978 (=s'tUS4128733 US4171#S-] z;@1@Varshni, Y. P. X=HtX6Temperature dependence of energy gap in semiconductors6X=HtX01.3.3 Electron BandgapsX=HtX PhysicaX=HtX 1967E$M_ND@_<bE34E$M_ND@_<bE1E$M_ND@_<bE149-154X=HtXX=HtX%G\\As01mesant\Procite Databases\WCS\Articles/Varshni YP 1967 Physica.pdfGE$M_ND@_<bE)0Copyright Statement: (c)2003 Inst. For Sci. Info0E$M_ND@_<bE+1009E$M_ND@_<bE,A19679286900015E$M#_ND@_<bE65530<=? /Copeland//III, John A.//Dentai, A.G.//Lee, T.P./S=oq-Unidirectional optical device and regenerator-S=oq11N~N~`cite Databases\WCS\Articles\Smith AR 1997 11.pdf@V$M__ a@_aZV)* The relatively small size of nitrogen, compared to Ga or In, in these compounds leads to a number of unique surface structures, which have begun to be explored both experimentally and theoretically for the (0001) growth surface of cubic GaN.V$M__ a@_aZV*Reconstructions of the GaN(0001) surface are studied for the first time. Using scanning tunneling microscopy and reflection high-energy electron diffraction, four primary structures are observed: 1 x 1, 3 x 3, 6 x 6, and c(6 x 12). On the basis of first-principles calculations, the 1 x 1 structure is shown to consist of a Ga monolayer bonded to a N-terminated GaN bilayer. From a combination of experiment and theory, i t is argued that the 3 x 3 structure is an adatom-on-adlayer structure with one additional Ga atom per 3 x 3 unit cell.V$M__ a@_aZV+100V$M__ a@_a lZV,3Molecular-Beam Epitaxy/ GaN Films/ Growth/ Polarity3V$M__ a@_aZV510=s0tXerox Corporation(=s0t635240(=s0t US4297653 (=s0tUS=s0tXerox Corporation(=s0t635240(=s0t US4297653 (=s0tUSUS4771434 US4789214 US4807238 US4948960 US4983009 US4992847 US5012325 US5032897 US5119448 US5122652 US5191204 US5247167 US5266788 US5404372 US5409482 US5838708 US6410941(=s0t%6\\Aeron\Procite Databases\WCS\Patents\US04297653__.pdf6(=zs0t' H01S 3/19 (=s0t+23(=s0t64030^2bN~6$M_4$@_4451-462&=0v:X&=0v:X%?\\As01mesant\Procite Databases\WCS\Articles/Banerjee R 1968.pdf?$M_4$@_4)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_4$@_4+107$M_4$@_4,A1969c612000010$M_4!$@_465520p<@LSmith, A. R.//Feenstra, R. M.//Greve, D. W.//Neugebauer, J.//Northrup, J. E.Lt=rw\Carnegie Mellon Univ,Dept Phys,Pittsburgh,Pa 15213 ; Carnegie Mellon Univ,Dept Elect & Comp Engn,Pittsburgh,Pa 15213 ; Max Planck Gesell,Fritz Haber Inst,D-14195 Berlin,Germany ; Xerox Corp,Palo Alto Res Ctr,Palo Alto,Ca 94304t=rw\2Reconstructions of the GaN(000(1)Over-Bar) Surfacepx=rw\px=rw\px=rw\06.3.1px=rw\ Physical Review Letterst=rw\ ArticleV$M__ a@_aZV Nov 17, 1997 V$M__ a@_aZV79V$M__ a@_aZV20V$M__ a@_aZV 3934-3937 V$M__ a@_aZV15V$M__ a@_aZV%@\\As01mesant\Procite Databases\WCS\Articles\Smith AR 1997 11.pdf@V$M__ a@_aZV)* The relatively small size of nitrogen, compared to Ga or In, in these compounds leads to a number of uniqueR)==?(Scifres, Donald R.//Stutius, Wolfgang E.((=s0t$Hybrid semiconductor laser/detectors$(=s0t10.5.5=s0t64030$M_@_|"N+789$MGw{R)=@(Scifres, Donald R.//Stutius, Wolfgang E.((=s0t$Hybrid semiconductor laser/detectors$(=s0t10.5.5=s0tXerox Corporation(=s0t635240(=s0t US4297653 (=s0tUS(=s0t 10/27/1981 (=s0tJP55145386A2 US4297653(=s0tOUS3842263 US3855546 US4058821 US4074143 US4079404 US4092614 US4137543 US4156206O(=s0tJ. D. Crow et al., "Gallium Arsenide Laser-Array-on-Silicon Package," Applied Optics, vol. 17, No. 3, pp. 479-485, Feb. 1, 1978.(=s0t"US4588883 US4604753 US4675518 US4692207 US4761788 US4768073 US4771434 US4789214 US4807238 US4948960 US4983009 US4992847 US5012325 US5032897 US5119448 US5122652 US5191204 US5247167 US5266788 US5404372 US5409482 US5838708 US6410941(=s0t%;\\As01mesant\Procite Databases\WCS\Patents\US04297653__.pdf;(=s0t' H01S 3/19 (=s0t+23(=s0t64030z;[?1h1?Varshni, Y. P. X=HtX6Temperature dependence of energy gap in semiconductors6X=HtX01.3.3 Electron BandgapsD@_<bE65530EuN~y<@ /Copeland//III, John A.//Dentai, A.G.//Lee, T.P./S=oq-Unidirectional optical device and regenerator-S=oq11.4.3S=oq706518S=oq US4152713 S=oqUSS=oq5/1/1979S=oqBE0872506A CA1106482A1 CH0638642A DE2851643A1 FR2410878A1 FR2410878B1 GB2009501A GB2009501B IT1100445A IT7830470A0 JP54087079A2 JP58025285A2 JP58025286A2 JP59003871B4 NL7811841A SE0436160B SE0436160C SE7812185A US4152713S=oq1US3852798 US3936855 US3968564 US3979587 US40657291S=oq"US4218692 US4233614 US4286171 US4294510 US4549782 US4553811 US5542018 USRE31255 US4316204 US4346394 US4879250 US4910571 US4948960 US4977433 US4979002 US5055894 US5136353 US5229879 US5280184 US5401983 US4216486 US4217598 US4237474 US4281253 US4457582 US4549085 US4737003 US4772787S=oq%;\\As01mesant\Procite Databases\WCS\Patents\US04152713__.pdf;S=oq' H01L 31/12 S=oq+28S=oq800Article$M_LO@_OL 1987 OCT 26 $M_LO@_OL51$M_LO@_OL17$M_LO@_OL 1325-1Article$M_LO@_OL 1987 OCT 26 $M_LO@_OL51$M_LO@_OL17$M_LO@_OL 1325-1Article$M_LO@_OL 1987 OCT 26 $M_LO@_OL51$M_LO@_OL17$M_LO@_OL 1325-1GwN~+z;@2Dodson, B. W. //Tsao, J. Y. I=(vԫ&Sandia Natl Labs/Albuquerque//Nm/87185&I=(vԫFRelaxation of Strained-Layer Semiconductor Structures Via Plastic-FlowFI=(vԫ07.2.2I=(vԫ Applied Physics LettersI=(vԫ Article$M_LO@_OL 1987 OCT 26 $M_LO@_OL51$M_LO@_OL17$M_LO@_OL 1325-1327 $M_LO@_OL%A\\As01mesant\Procite Databases\WCS\Articles\Dodson BW 1987 10.pdf,HhH9XXFI=(vԫ+321.$M_LO@_OL12800R)=@(9Burnham, Robert D.//Scifres, Donald R.//Streifer, William9!=q4Transverse light emitting electroluminescent devices4!=q<^=?*-Lean, Eric G.//Comerford, Liam D.//Laff, R.A.-2=o<C)Grating coupled waveguide laser apparatus)2=o<C05.2.42=o<C2800702=o<C US4156206 2=o<CUS2=o<C 5/22/1979 2=o<CECA1089966A1 DE2751183A1 FR2376536A1 GB1544765A JP53084583A2 US4156206E2=o<CUS3609585 US38837722=o<CReinhart et al., Applied Physics Letters, Jul. 1, 1975, vol. 27, No. 1, pp. 45-48. Dakss, M. L., Laser Focus, Dec. 1975, pp. 31-34. Ludeke et al., IBM Technical Disclosure Bulletin, vol. $TN~+S4766470 US4883770 US4901327 US4943970 US4947223 US5020066 US5027178 US5031187 US5034344 US5034958 US5038356 US5052008 US5068869 US5793062!=q%;\\As01mesant\Procite Databases\WCS\Patents\US04309670__.pdf;!=q' H01S 3/19 !=q+21!=q64040<@*-Lean, Eric G.//Comerford, Liam D.//Laff, R.A.-2=o<C)Grating coupled waveguide laser apparatus)2=o<C05.2.42=o<C2800702=o<C US4156206 2=o<CUS2=o<C 5/22/1979 2=o<CECA1089966A1 DE2751183A1 FR2376536A1 GB1544765A JP53084583A2 US4156206E2=o<CUS3609585 US38837722=o<CReinhart et al., Applied Physics Letters, Jul. 1, 1975, vol. 27, No. 1, pp. 45-48. Dakss, M. L., Laser Focus, Dec. 1975, pp. 31-34. Ludeke et al., IBM Technical Disclosure Bulletin, vol. 15, No. 2, Jul. 1972.2=o<C"!US4286232 US4293826 US4805185 US4807238 US4911512 US4911516 US5071216 US5101459 US4358851 US4411057 US5949810 US4583227 US4681399 US48R)=1?25Gerlach, Robert L.//Seibel, David D.//Miller, Mark C.5=s<tSample transport system=s<t06.1.1=s<tThe Perkin-Elmer Corporation=s<t435350=s<t US4412771 =s<tRBr15, No. 2, Jul. 1972.2=o<C"!US4286232 US4293826 US4805185 US4807238 US4911512 US4911516 US5071216 US5101459 US4358851 US4411057 US5949810 US4583227 US4681399 US4872176 US4873697 US5023881 US5070508 US4297653 US4343890 US4227769 US4257672 US4786132 US4805177 US4812005 US4854659 US4914667 US4935939 US5115445 US5638396!2=o<C%;\\As01mesant\Procite Databases\WCS\Patents\US04156206__.pdf;2=o<C'H01S 3/52=o<C+292=o<C810R)=@25Gerlach, Robert L.//Seibel, David D.//Miller, Mark C.5=s<tSample transport system=s<t06.1.1=s<tThe Perkin-Elmer Corporation=s<t435350=s<t US4412771 =s<tUS=s<t 11/1/1983 =s<t US4412771 =s<tOUS3516386 US3584847 US3585941 US3902615 US3981791 US4089735 US4293249 US4318767O=s<t" US4498416 US4516435 US4532816 US4542712 US4550239 US4550242 US4616683 US4634331 US4651441 US4668153 US4674936 US4674939 US4676709 US4676884 US4715764 US4732527 US4739882 US4764076 US4781511 US4810473 US4815912 US4816638 US4867631 US4911597 US5280983 US5509771 USRE34311 =s<t%;\\As01mesantz;1?(2^Feldmann, J. //Peter, G. //Gobel, E. O. //Dawson, P. //Moore, K. //Foxon, C. //Elliott, R. J. ^$=oKUniv Marburg,Fachbereich Phys/D-3550 MarburE_l n+503$M_t@_l n12840h(X~+$+FH 16543-16550 HFH36HFH%>\\As01mesant\Procite Databases\WCS\Articles/Volm D 1996 06.pdf>HFH*We report on photoluminescence experiments on hexagonal GaN epitaxial films grown by hydride and organometallic vapor phase epitaxy on sapphire and 6H-SiC. At low temperatures we observe free and bound exciton recombinations, which allow us to establish the free-exciton binding energy and the localization energies of the excitons bound to neutral donors in undoped films. We demonstrate that the energetic positions of the excitonic recombination lines depend on the layer thickness and the substrate materials on which the layer was deposited. The influence of  strain on the valence-band splittings can be quantified when observing the free-exciton transitions onto the different valence bands. The experimental results are compared to a theoretical calculation using a first-principle total-energy pseudopotential method within the local-density formalism. We present evidence for the existence of two shallow donors in GaN. One of them most likely stems from <[?4-Dingle, R.//Gossard, Arthur C.//Stormer, H.L. x=oqYx=oqY#x=oqYLHigh mobility multilayered heterojunction devices employing modulated dopingLx=oqY02.3.3x=oqY706518x=oqY US4163237 x=oqYUSx=oqY 7/31/1979 x=oqYCA1139892A1 DE2964082C0 EP0005059A2 EP0005059A3 EP^N~ +1 US4089735 US4293249 US4318767O=s<t" US4498416 US4516435 US4532816 US4542712 US4550239 US4550242 US4616683 US4634331 US4651441 US4668153 US4674936 US4674939 US4676709 US4676884 US4715764 US4732527 US4739882 US4764076 US4781511 US4810473 US4815912 US4816638 US4867631 US4911597 US5280983 US5509771 USRE34311 =s<t%;\\As01mesant\Procite Databases\WCS\Patents\US04412771__.pdf;=s<t' B65G 51/2 =s<t+27=s<t64050z;@(2^Feldmann, J. //Peter, G. //Gobel, E. O. //Dawson, P. //Moore, K. //Foxon, C. //Elliott, R. J. ^$=oKUniv Marburg,Fachbereich Phys/D-3550 Marburg//Fed Rep Ger ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; Univ Oxford,Dept Theoret Phys/Oxford Ox1 3np//England$=oKDLinewidth Dependence of Radiative Exciton Lifetimes in Quantum-WellsD$=oK03.3.1$=oK$=oK Physical Review Letters$=oK Article$M_t@_l n 1987 Nov 16 $M_t@_l n59$M_t@_l n20$M_t@_l n 2337-2340 $M_t@_l n%B\\As01mesant\Procite Databases\WCS\Articles\Feldmann J 1987 11.pdf,$M_t@_l n$M_tJ@_l n+503$M_t@_l n12840p<\?lVolm, D.//Oettinger, K.//Streibl, T.//Kovalev, D.//Benchorin, M.//Diener, J.//Meyer, B. K.//Majewski, J.//Eckey, L.//Hoffmann, A.//Amano, H.//Akasaki, I.//Hiramatsu, K.//Detchprohm210596 US5650642 US5831Iy6<@>"Denkin, Nathan M.//Runge, Peter K."=nELArrangement for coupling between an electrooptic device and an optical fiberL=nE12.2.1=nE706518=nE US4186994 =nEUS=nE2/5/1980=nE US4186994 =nEYUS3423594 US3628036 US3968564 US4030811 US4065203 US4075477 US4101197 US4118100 US4130343Y=nECohen, Power Coupling from GaAs Injection Lasers into Optical Fibers,Bell Syst. Tech. Journal, vol. 51, No. 3, Mar. 1972, pp. 573-594. Crow et al., GaAs Laser Array Source Package,Optics Letters, vol. 1, No. 1, Jul. 1977, pp. 40-42.=nE"IUS4435037 US4445751 US4966433 US4976506 US4307932 US4360372 US4865410 US4892374 US5177807 US5243673 US4411057 US4426055 US4907335 US4908694 US5267684 US5319729 US4479698 US4553811 US4917451 US4930854 US5715267 US4691987 US4790620 US5337392 US5412748 US4984866 US5007700 US42741R)=1?<"McIntyre, Robert J.//Webb, Paul P."=s8;tAvalanche photodiode array=s8;t11.3.4=s8;tRca Inc.=s8;t466180=s8;t US4458260 =s8;tCA=s8;t7/3/1984=s8;tCA1177148A1 US4458260=s8;t;US3601668 US3608189 US3703669 US4021844 US4129878 US4232328;=s8;t;US3601668 US3608189 US3703669 US4021844 US4129878 US4232328;^N~h04 US4296998 US4897711 US4904036 US5023703 US5146522I=nE%;\\As01mesant\Procite Databases\WCS\Patents\US04186994__.pdf;=nE' G02dB 5/14 =nE+33=nE830R)=@<"McIntyre, Robert J.//Webb, Paul P."=s8;tAvalanche photodiode array=s8;t11.3.4=s8;tRca Inc.=s8;t466180=s8;t US4458260 =s8;tCA=s8;t7/3/1984=s8;tCA1177148A1 US4458260=s8;t;US3601668 US3608189 US3703669 US4021844 US4129878 US4232328;=s8;t"US4740710 US4807027 US5021854 US5146296 US5229636 US5438217 US5446308 US5500376 US5583352 US5670383 US5751012 US5753947 US5757057 US5789277 US5812441 US5814527 US5831276t9SOptical guided wave signal processor for matrix-vector multiplication and filteringS@=t910.5.6@=t9>The Board of Trustees of the Leland Stanford Junior University>@=t9540885@=t9 US4588255 @=t9US@=t9 5/13/1986 @=t9AT0052861E AU0571442B2 AU1594683A1 BR8303264A CA1213063A1 DE3381571C0 EP0099193A2 EP0099193A3 EP0099193B1 IL0069003A0 IL0069003A1 IL0082711A0 IL0082711A1 IL0082712A0 IL0082712A1 JP59090816A2 KR9105324B1 KR9105324Y1 NO0832228A US4588255@=t9US3777149 US3944820 US397*ZJ6 US5837564 US5841150 US5869843 US5879955 US5920788 US5952671 US5970336 US5978258 US5985698 US5998244 US6002140 US6015977 US6025220 US6031287 US6066883 US6077729 US6087689 US6096596 US6104038 US6111264 US6114713 US6117720 US6118135 US6153890 US6160306 US6188089 US6189582 US6225142 US6229157 US6252244 US6287919 US6316784 US6337266 US6391688 US6392913 USRE36518=s8;t%;\\As01mesant\Procite Databases\WCS\Patents\US04458260__.pdf;=s8;t'#"H01L 27/14, H01L 31/0, H01L 29/90"#=s8;t+53$=s8;t64060R)=@FPTur, Moshe//Goodman, Joseph W.//Shaw, Herbert J.//Moslehi, Behzad//Bowers, J. E.L@=t9@=t9@=t9SOptical guided wave signal processor for matrix-vector multiplication and filteringS@=t910.5.6@=t9>The Board of Trustees of the Leland Stanford Junior University>@=t9540885@=t9 US4588255 @=t9 z;1?d2-Harris, J. J. //Joyce, B. A. //Dobson, P. J. -=ojPhilips Res Labs/Redhill Rh1 5ha/Surrey/England ; Univ London Imperial Coll Sci & Technol,De pt Phys/Londonj=oEOscillations in the Surface-Structure of Sn-Doped GaAs Growth by MBEE=o06.3.2= o Surface Science=o ArticleI$M_RT@_T* I1981I$M_RT@_T* I103I$M_RTJz~6 >@?Spitzer, W. G. //Gershenzon, M. //Frosch, C. J. //Gibbs, D. F. ?8=s).Optical absorption in n-type gallium phosphide.8=s )05.18=s) *Journal of Physics and Chemistry of Solids*8=s) 1959@_$@_ >$11 @_$@_ >$3-4@_$@_ >$339-341@_$@_ >$%?\\As01mesant\Procite Databases\WCS\Articles\Spitzer WG 1959.pdf ,@_$@_ >$@_$@_ >$)0Copyright Statement: (c)2003 Inst. For Sci. Info0@_$@_ >$+133@_$ S@_ >$,A1959wh86000028@_$@_ >$65540 <@H!Davey, John E.//Christou, Aristos!TOhmic contacts for group III-V n-type semiconductors using epitaxial germanium filmsT08.3597270 US4188710 US 2/19/1980  US4188710 OUS3577286 US3716407 US3753804 US3846169 US3914785 US3923975 US4119994 US4128733O"!US4344980 US4377030 US4570324 US4583110 US4994892 US4998158 US5444016 US5454901 US4400221 US454044 6 US5227333 US5229322 US5731245 US5856026 US4593307 US4796082 US5480829 US5606184 US5047365 US5144410 US6309953 US4226649 US4325181 US4849802 US4853346 US5288456 US5317190 US5897370 US6140248!%;\\As Res Ctr,Div Electr#Quantum-Well Heterostructure Lasers#10.2.1 #IEEE Journal of Quantum Electronics# Article1980162170-186%=\\Aeron\Procite Databases\WCS\Articles/H *olonyak N 1980 02.pdf=+3971293012930%6\\Ae `ron\Procite Databases\WCS\Patents\US04188710__.pdf6'H01L 21/22; H01L 21/225+29840IyN~\6 e01mesant\Procite Databases\WCS\Patents\US04188710__.pdf;'H01L 21/22; H01L 21/225+29840 z;@2=Holonyak, N. //Kolbas, R. M. //Dupuis, R. D. //Dapkus, P. D. =Univ Illinois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Rockwell Int,Electr Res Ctr,Div Electr#Quantum-Well Heterostructure Lasers#10.2.1 #IEEE Journal of Quantum Electronics# Article1980162170-186%B\\As01mesant\Procite Databases\WCS\Artic /les/Holonyak N 1980 02.pdfB+39712930 z;@2;Huffaker, D. L. //Deppe, D. G. //Kumar, K. //Rogers, T. J. ;2=\wxT̬[Univ Texas,Microelectr Res Ctr,Dept Elect & Comp ; Martin Marietta Corp/Syrac use//Ny/13121[2=\wxT̬JNative-Oxide Defined Ring Contact for Low-Threshold Vertical-Cavity LasersJ2=\wxT̬11.2.22 =\wxT̬ Applied Physics Letters2=\wxT̬ Article$M_@_|T Jul 4, 1994 $M_@_|T65 $M_@_|T1$M_@_|T97-99$M_@_|T%C\\As01mesant\Procite Databases\WCS\Articles\Huffaker DL 1994 07.pdfCnications systems? =s410.5.5 =s4At&T Bell Laboratories =s4706518 =s4 US4592043  =s4US =s4 5/27/1986  =s4jDE3484345C0 EP0148266A1 EP01, G. F.  =s4 =s4 =s4?Wavelength division multiplexing optical commu2b"RK{c6=s4 US4592043  =s4US =s4 5/27/1986  =s4jDE3484345C0 EP0148266A1 EP0148266B1 IT1176381A IT8421798A0 JP08001503B4 JP60501780T2 US4592043 WO8500484A1j =s4US4466694 US4469397 =s4"US4676583 US4677398 US4715028 US4720160 US4730886 US4742576 US4748687 US4759011 US4759596 US4768849 US4778238 US4799749 US4799797 US4839614 US4859017 US4860279 US4866698 US4901306 US4905243 US4914648 US5088095 US5091979 US5191626 US5212577 US5313535 US5339157 US5369515 US5369516 US5412743 US5436748 US5469283 US5485296 US5499308 US5526155 US5537634 US5627668 US5825789 US5886802 US5949562 US5966236 US6243517 US6321011 US6324204 US6373872 US6393185 US6393186 =s4%;\\As01mesant\Procite Databases\WCS\Patents\US04592043__.pdf; =s4'"H04J 1/0, iH04B 9/0" =s4+46 =s464080AtEastman Kodak Company=sAt160890=sAt US4694185 =sAtUSAtEastman Kodak Company=sAt160890=sAt US4694185 =sAtUS/_N~ R)=@ZWeiss, Armin K.=sAt,Light sensing devices with lenticular pixels,=sAt11.3.4h=sAtEastman Kodak Company=sAt160890=sAt US4694185 =sAtUS=sAt 9/15/1987 =sAt:CA1271829A1 EP0242663A2 EP0242663A3 JP62254474A2 US4694185:=sAtUS4362806 US4410804 US4425501=sAt Ishihara et al., "A High Photosensitivity IL-CCD Image Sensor with Monolithic Resin Lens Array", IEDM, 19.3, pp. 497-500, (1983).; Saeki et al., "Effect of Microlens Array on MOS Color Imager", IEEE Transactions on Consumer Electronics, vol. CE-31, No. 2, May, 1985. =sAt"qUS4966831 US5099320 US5118924 US5262667 US5270491 US5286605 US5293036 US5306926 US5321297 US5323052 US5324930 US5340978 US5371397 US5420634 US5422285 US5430475 US5432333 US5519205 US5529936 US5534720 US5583354 US5593913 US5672519 US5693967 US5711890 US5734155 US5734190 US5760834 US5770889 US5811320 US5824236 US5877040 US5977535 US6043481 US6211916 US6217892 US6259083q=sAt%;\\As01mesant\Procite DatabR)==?d/Hinton, H. S.//Lentine, A. L.//Miller, D. A. B. P=o,ZP=o,Z%P=o,Z5Symmetric optical device with quantum well absorption5P=o,Z11.4.2P=o,Z@American Telephone and Telegraph Company, at&T Bell Laboratories@^N~77 US5711890 US5734155 US5734190 US5760834 US5770889 US5811320 US5824236 US5877040 US5977535 US6043481 US6211916 US6217892 US6259083q=sAt%;\\As01mesant\Procite Databases\WCS\Patents\US04694185__.pdf;=sAt' H01L 27/14 =sAt+37=sAt64090R)=@d/Hinton, H. S.//Lentine, A. L.//Miller, D. A. B. P=o,ZP=o,Z%P=o,Z5Symmetric optical device with quantum well absorption5P=o,Z11.4.2P=o,Z@American Telephone and Telegraph Company, at&T Bell Laboratories@P=o,Z706518P=o,Z US4754132 P=o,ZUSP=o,Z 6/28/1988 P=o,ZwCA1298388A1 DE3881212C0 DE3881212T2 EP0360833A1 EP0360833B1 JP02503720T2 JP02650746B2 US4754132 WO8808553A2 WO8808553A3wP=o,Z'US3753247 US4166224 US4546244 US4691111'P=o,ZD. A. B. Miller et al., "The Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation,R)==?nThornton, R.L. 8=.q6$8=.q6$8=.q6$WMonolithic high density arrays of independently addressable semiconductor laser sourcesW`=.q6$10.5.5`=.q6$Xerox Corporation`=.q6$635240rporation`=.q6$635240635240L| <l7R)=@nThornton, R.L. 8=.q6$8=.q6$8=.q6$WMonolithic high density arrays of independently addressable semiconductor laser sourcesW`=.q6$10.5.5`=.q6$Xerox Corporation`=.q6$635240`=.q6$ US4870652 `=.q6$US`=.q6$ 9/26/1989 `=.q6$aDE68912429C0 DE68912429T2 EP0350327A2 EP0350327A3 EP0350327B1 JP02039583A2 JP07105571B4 US4870652a`=.q6$;US4378255 US4445125 US4474422 US4706255 US4727557 US4731789;`=.q6$Y. Tokuda et al., "Dual Wavelength Emission From a Twin Stripe Single Quantum Well Laser", Applied Physics Letters, vol. 51(21), pp. 1664-1666, Nov. 23, 1987.`=.q6$" US5062115 US5140605 US5164797 US5208823 US5216263 US5317170 US5324387 US5337074 US5355303 US5360761 US5369497 US5402436 US5412678 US5422905 US5497181 US5497391 US551R)=Ԯ1?x Gmitter, T.J.//Yablonovitch, Eli =htq6=htq6=htq62Lift-off and subsequent bonding of epitaxial films2=htq608.4.3=htq6"Bell Communications Research, Inc."=htq658495=htq6 US4883561 =htq6US=htq6 11/28/1989 =htq6US4846931 US^N~2 73200 US5574491 US5614961 US5684819 US5715021 US5717707 US5764273 US5766981 US5802092 US5920361 US6324120 `=.q6$%;\\As01mesant\Procite Databases\WCS\Patents\US04870652__.pdf;`=.q6$' H01S 3/19 `=.q6$+27`=.q6$64110R)=@x Gmitter, T.J.//Yablonovitch, Eli =htq6=htq6=htq62Lift-off and subsequent bonding of epitaxial films2=htq608.4.3=htq6"Bell Communications Research, Inc."=htq658495=htq6 US4883561 =htq6US=htq6 11/28/1989 =htq6US4846931 US4883561=htq6Klem et al., "Characteristics of Lift-Off Fabricated AlGaAs/InGaAs Single-Strained Quantum Well Structures on Glass and Silicon Substrates" PreprintR)=Ԯ1?4Flamm, Daniel L.//Ibbotson, D. E.//Johnson, Wayne L.HQ=@ohHQ=@ohHQ=@ohBProcesses depending on plasma generation using a helical resonatorBHQ=@oh08.2.3HQ=@oh?American Telephone and Telegraph Company,at&T Bell Laboratories?HQ=@oh706518HQ=@oh US4918031 HQ=@ohUSHQ=@ohHQ=@ohUSHQ=@ohO0` PDLSep. 1984, pp. 19-23.; "Reactive Sputter Deposition: A Quantitative Analysis", by D. K. 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E.//Johnson, Wayne L.HQ=@ohHQ=@ohHQ=@ohBProcesses depending on plasma generation using a helical resonatorBHQ=@oh08.2.3HQ=@oh?American Telephone and Telegraph Company,at&T Bell Laboratories?HQ=@oh706518HQ=@oh US4918031 HQ=@ohUSHQ=@oh 4/17/1990 HQ=@ohCA1303253A1 DE68928944C0 DE68928944T2 EP0376546A2 EP0376546A3 EP0376546B1 EP0871199A2 EP0871199A3 JP02222141A2 KR9307100B1 KR9307100Y1 US4918031HQ=@oh;US4123663 US4160690 US4175235 US4233109 US4298443 US4368092;HQ=@ohsMacAlpine, W., Coaxial Resonators with Helical InNer Conductor, Proceedings of the IRE, Apr. 24, 1959, pp. 2099-2105.; C. J. Mogab, VLSI Technology, ed Sze at McGraw-Hill, NY 1983, pp. 303-345.; Suzuki, et al., Journal of the Electrochemical Society, 126, 1024 (1979).; W. W. MacAlpine, et al., Proc. of IRE, p. 2099 (1959).; C. W. Haldeman et al., Air Force Research Lab Technical Research Report, 69-0148 accession No. TL501.M41, A25 No. 156.; D. L. Flamm et al. VLSI Electronics: Microstructure Science, vol. 8, N. G. 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F.//Shani, Yosi`=woL^`=woL^!`=woL^Adiabatic reflection apparatus`=woL^10.5.6`=woL^At&T Bell Laboratories`=woL^706518`=woL^ US5048909 `=woL^US`=woL^ 9/17/1991 `=woL^sDE69116458C0 DE69116458T2 EP0468715A2 EP0468715A3 EP0468715B1 HK0145196A JP04242227A2 US5048909 US5093876 USRE35516s`=woL^'US4128301 US4690489 US4763977 US4775207'`=woL^rD. C. Johnson et al., "New Design Concept for a Narrowband . . . ", Electronics Letters, Jun. 18, 1987, vol. 23, No. 13, pp. 668-669.; R. C. Alferness et al., "Narrowband GaInAsP/InP Waveguide Grating-Folded . . . ", Electronics Letters, Feb. 4, 1988, vol. 23, No. 3, pp. 150-151.; R. F. Kazarinov et al., "Narrow-Band Resonant Optical Reflectors and Resonant . . . ", IEEE Journal of QuantumR)=Ԯ1?n~,7lR)=@"Welch, David F.//Waarts, Robert G."c=sZt8Coupling arrangements for frequency-doubled diode lasers8c=sZt10.5.4=sZt Spectra Diode Laboratories, Inc. c=sZt535540c=sZt US5185752 c=sZtUSc=sZt2/9/1993c=sZt US5185752 c=sZtcUS4925811 US4951293 US4953931 US4953943 US4955030 US4973117 US5022729 US5036220 US5039627 US5121250cc=sZtyD. Welch et al., "Low Threshold Current Laser Emitting At 637nm" Electronics Letters, vol. 27, No. 9, pp. 693-694 (1991).yc=sZt"US5237636 US5301059 US5303247 US5384797 US5406575 US5412502 US5418802 US5436758 US5471490 US5485481 US5499256 US5504616 US5504772 US5506722 US5513196 US5559824 US5594592 US5610760 US5615041 US5617435 US5619369 US5619488 US5621559 US5644584 US5659559 US5715263 US5737300 US5751749 US5787102 US5836073 US5867303 US5898718 US5943459 US6014388 US6021141 US6044093 US6108111 US6122299 US6163558 US6233259 US6400736c=sZt%;\\As01mesant\Procite Databases\WCS\Patents\US05185752__.pdf;<[?R.Stormer, H. L.//Dingle, R.//Gossard, Arthur C.Р=oqР=oqР=oq]Method of making high mobility multilayered heterojunction devices employing modulated doping]Р=oq02.3.3Р=oq706518Р=37 US4194935 USRE33671 WO7900968A1Р=oqmUS3626257 US3626328 US3721583 US3737737 US3882533 US3915765 US^N~rd47504772 US5506722 US5513196 US5559824 US5594592 US5610760 US5615041 US5617435 US5619369 US5619488 US5621559 US5644584 US5659559 US5715263 US5737300 US5751749 US5787102 US5836073 US5867303 US5898718 US5943459 US6014388 US6021141 US6044093 US6108111 US6122299 US6163558 US6233259 US6400736c=sZt%;\\As01mesant\Procite Databases\WCS\Patents\US05185752__.pdf;c=sZt' H01S 3/10 c=sZt+41c=sZt64190<@R.Stormer, H. L.//Dingle, R.//Gossard, Arthur C.Р=oqР=oqР=oq]Method of making high mobility multilayered heterojunction devices employing modulated doping]Р=oq02.3.3Р=oq706518Р=oq US4194935 Р=oqUSР=oq 3/25/1980 Р=oqCA1139892A1 DE2964082C0 EP0005059A2 EP0005059A3 EP0005059B1 JP55500196T2 JP59046425B4 US4163237 US4194935 USRE33671 WO7900968A1Р=oqmUS3626257 US3626328 US3721583 US3737737 US3882533 US3915765 US>h1?,Nelson, D. F. //Gershenzon, M. //Ashkin, A. ,B=Ъs 2Band-filling model for gaas injection luminescence2B=Ъs O01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOB=Ъs  Applied Physics LettersB=Ъs  1963nority Carrier InjectionOB=Ъs  Applied Physics LettersB=Ъs  1963$M_4$N~> ;,+>@"Elliott, R. J. HHB+Intensity of optical absorption by excitons+HHB05.1HHB Physical ReviewHHB 1957HHBp108HHBp6HHBp 1384-1389 HHBp%B\\As01mesant\Procite Databases\WCS\Articles\Elliott RJ 1957 12.pdfBHHBp)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHBp+1245HHBp,A1957wb73700008HHBp65570z;@@39Neave, J. H. //Joyce, B. A. //Dobson, P. J. //Norton, N. 9D=oRjPhilips Res Labs/Redhill Rh1 5ha/Surrey/England ; Univ London Imperial Coll Sci & Technol,Dept Phys/LondonjD=oR>Dynamics of Film Growth of GaAs by MBE From RHEED Observations>D=oR06.2.4D=oR %Applied Physics a-Solids and Surfaces%D=oR Article$M_PTQ@_LQl1983$M_PTQ@_LQl31$M_PTQ@_LQl1$M_PTQ@_LQl1-8$M_PTQ@_LQl%=\\As01mesant\Procite Databases\WCS\Articles/Neave JH 1983.pdf=+7692$M_PTQ@_LQl13120 >1?,*Monemar, B. //Shih, K. K. //Pettit, G. D. *HHB2Some optical-properties of alxga1-xas alloy system2HHB05r2~<7!(L=`nKDirect Synthesis of Corrugated Superlattices on Non-(100)-Oriented SurfacesK(L=`n06.5.1(L=`n!(L=`n Physical Review Letters(L=`n Article$M_l\@_T7l Dec 30, 1991 $M_l\@_T!7l67$M_l\@_T7l27$M_l\@_T7l 3812-3815 $M_l\@_T7l%@\\As01mesant\Procite Databases\WCS\Articles\N!otzel R 1991 12.pdf@$M_l\@_T7l*We report on the direct synthesis of superlattices with lateral corrugation of the interfaces on (211), (311), and (111) GaAs substrates! by molecular-beam epitaxy. Reflection electron diffraction directly shows the formation of arrays of macrosteps during epitaxial growth. High-resolution transmission electron microscopy confirms the !transfer of the surface structure to the GaAs/AlAs interface which results in distinct energy shifts in the luminescence of GaAs/AlAs multilayer structures. The surface structure gives rise to lateral">h1?6-Turner, W. J. //Reese, W. E. //Pettit, G. D. -'=t6TX$Exciton absorption + emission in inp$'=t6TX01.4.4 Excito"ns'=t6TX Physical Review A'=t6TX 1964E$M_ND@_<t^E136E$M_ND@_<t^E5"aE$M_ND@_<t^E 1467-1470'=t6TX'=t6TX%<\\Aeron\Procite Databases\WCS\Articles\Turner WJ 1964 11.pdf<"($M_ND@_<t^E65590^N~t| >@,*Monemar, B. //Shih, K. K. //Pettit, G. D. *HHB2Some optical-properties of alxga1-xas alloy system2HHB05 .1HHB Journal of Applied PhysicsHHB 1976HHB47HHB 6HHB 2604-2613 HHB%A\\As01mesant\Procite Databases\WCS\Articles\Monemar B 1976 06.pdfAHHB )0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB+151HHB,Bt421HHB6558 0!z;@T3JNotzel, R. //Ledentsov, N. N. //Daweritz, L. //Hohenstein, M. //Ploog, K. J(L=`nMax Planck Inst Festkorperforsch/W-7000 Stuttgart ; Af Ioffe! Physicotech Inst/Leningrad//Ussr ; Zent Inst Elektronenphys/O-1086 Berlin//Germany ; Max Planck Inst Met Res/W-7000 Stuttgart 80//Germany ; Univ Darmstadt,Dept Mat Sci/W-6100 Darmstadt//Germany">h1?6-Turner, W. J. //Reese, W. E. //Pettit, G. D. -'=t6TX$Exciton absorption + emission in inp$'=t6TX01.4.4 Excito"ns'=t6TX Physical Review A'=t6TX 1964E$M_ND@_<t^E136E$M_ND@_<t^E5"aE$M_ND@_<t^E 1467-1470'=t6TX'=t6TX%<\\Aeron\Procite Databases\WCS\Articles\Turner WJ 1964 11.pdf<j*ZN~<7#>@@-Kunc, K. //Balkanski, M. //Nusimovici, M. A. -8=vdLattice-dynamics of several AnB8-n compounds having zincblende structure .2. Numerical-calc#ulationsd8=v &Physica Status Solidi B-Basic Research&8=v 1975$M_\L@_DB\72$M_\#L@_DB\1$M_\L@_DB\229-248$M_\L@_DB\%;\\As01mesant\Procite Databases\WCS\Articles/Kunc K 1975.pdf,$M_\L#@_DB\$M_\L@_DB\)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_\L@_DB\+176$M_\L@_DB\,A197#>5ay22200024$M_\L@_DB\65600$<@\'Maeda, M.//Ikushima, Ichiro//Tanaka, M.xS=o=xS=o=xS=o=,Optical device with a $laser-to-fiber coupler,xS=o=12.2.1xS=o=252865xS=o= US4199222 xS=o$=JPxS=o= 4/22/1980 xS=o=fDE2750322A1 DE2750322B2 DE2750322C3 GB1567701A JP53060651A2 NL0172372B NL0172372C NL7712$472A US4199222fxS=o=OUS2506672 US3756688 US3779628 US3809455 US3894789 US3950075 US4065203 US4076375OxS=o=sDyott, Direct Couplin%<1?fEPetroff, Pierre M.//Wiegmann, William//Dingle, R.//Gossard, Arthur C.Ex=oqUKPeriodic monolayer semiconductor structures grown by molecular beam =o=sDyott, Direct Couplin4dN~X$=JPxS=o= 4/22/1980 xS=o=fDE2750322A1 DE2750322B2 DE2750322C3 GB1567701A JP53060651A2 NL0172372B NL0172372C NL7712$472A US4199222fxS=o=OUS2506672 US3756688 US3779628 US3809455 US3894789 US3950075 US4065203 US4076375OxS=o=sDyott, Direct Couplin$g from a GaAs Laser into a Single-Mode Fiber, Electronics Letters, Jul. 1975, vol. 11, No. 14.sxS=o="IUS4302070 US4376946 US4539476 US4548465 US5291570 US5315680 U$S6296400 US4440470 US4448480 US4665529 US4669819 US4818053 US4837768 US5363461 US5457759 US4484794 US4504950 US5566264 US5666449 US4762395 US4775211 US5832011 US5841562 US4842360 US5261017 US6004044 U$S6034348 US4294512 US4296998 US4449783 US4475788 US4752109 US4762386IxS=o=%;\\As01mesant\Procite Databases\WCS\Patents\US04199222__.pdf;xS=o$t=' G02B 5/14 xS=o=+33xS=o=860%epitaxyKx=oqU06.2x=oqU706518x=oqU US4205329 x=oqUUS%epitaxyKx=oqU06.2x=oqU706518x=oqU US4205329 x=oqUUSLudke et al., Appl. Phys. Letters, vol. 24, No. 9, pp. 417-419, (May 1, 1974)./%x=oqU"US4550330 US4591889 US4870648 US4871690 US4469977 US4503447 US4761790 US4772934 US5216260 US5216262 US5373186 US5422533 US4620206 US4626792 US5543749 US5608229 U4469977 US4503447 US4761790 US4772934 US5216260 US5216262 US5373186 US5422533 US4620206 US4626792 US5543749 US5608229 U^:jN~2D7%<@fEPetroff, Pierre M.//Wiegmann, William//Dingle, R.//Gossard, Arthur C.Ex=oqUKPeriodic monolayer semiconductor structures grown by molecular beam %epitaxyKx=oqU06.2x=oqU706518x=oqU US4205329 x=oqUUS%x=oqU 5/27/1980 x=oqUUS4205329 US4261771x=oqUYUS3309553 US3691476 US3737737 US3872400 US3%893148 US3915765 US3929527 US3980883 US3982207Yx=oqU/Miljagin et al., Sov. Phys. Crystallog., vol. 20, No. 3, 1975, pp. 379-381. Cho, Appl. Phys. Letters, vol. 19%, No. 11, Dec. 1971, pp. 467-468. Chang et al., Applied Physics Letters, vol. 28, No. 1, pp. 39-41, (Jan. 1, 1976). Ludke et al., Appl. Phys. Letters, vol. 24, No. 9, pp. 417-419, (May 1, 1974)./%x=oqU"US4550330 US4591889 US4870648 US4871690 US4469977 US4503447 US4761790 US4772934 US5216260 US5216262 US5373186 US5422533 US4620206 US4626792 US5543749 US5608229 U%S4525687 US4528464 US4720309 US4727555 US4794606 US4806994 US4879256 US4882609 US4916498 US4939556 US4855797 US4866488 US4980750 US5060234 US5244749 US5329150 US5680412 US5817538 US4780748 US4783427 U&lectron Band Structures8=P s  Journal of Applied Physics8=P s 1961$M_@_ ľ32$M&_@_ ľ 2094-2102 j=P s %9\\Aeron\Procite Databases\WCS\Articles/Becker PC 1961.pdf9$M_@_ ľ)0Copyright Statement: H3$M_GH@_H285-359$M_^N~ xL7(.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO=Jw@.< Physical Review=Jw@.< 1961$M_(@_-121$M_@_-1$M_@_-53-62h=Jw@.<h=Jw@.<%?(\\As01mesant\Procite Databases\WCS\Articles\Laff RA 1961 01.pdf?$M_@_-)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_@_-+158(m$M_@_-,A19611438c00028$M_@_-65620)>@^Johnson, E. J. //Fan, H. Y. =@qH<KImpurity and exciton effects on infrared absorption edges of 3-v compoundsK=@qH)<05.1.2=@qH< Physical Review=@qH< 1965|$M_|l@_d\||139|$M_|l@_d)\||6a|$M_|l@_d\|| 1991-2001=@qH<=@qH<%B\\As01mesant\Procite Databases\WCS\Articles\Johnson EJ )1965 09.pdfB|$M_|l@_d\||)0Copyright Statement: (c)2003 Inst. For Sci. Info0|$M_|l@_d\||+101|$M_|l@_d\||,A19656778)9500035|$M_|l@_d\||65630p}=pzXLSpectral characteristics of external-cavity controlled semiconductor-lasersLp}=pz*X10.4p}=pzX #IEEE Journal of Quantum Electronics=pzX=pzX 1981$M_$t3c~T7*>@hFleming, M. W. //Mooradian, A. p}=pzXLSpectral characteristics of external-cavity controlled semiconductor-lasersLp}=pz*X10.4p}=pzX #IEEE Journal of Quantum Electronics=pzX=pzX 1981$M_$*@_<Zd17$M_$@_<Zd1$M_$@_<Zd44-59$M_$@_<Zd%?\\As01mesant\Procite Databases\WCS\Arti*cles/Fleming MW 1981.pdf?$M_$@_<Zd)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_$@_<Zd+166$M_$@_<Zd*<,Lb394$M_$@_<Zd65640+>@rFleming, M. W. //Mooradian, A. HHB@Fundamental line broadening of single-mode (gaal)as diode-lasers@HHB+10.4.4HHB Applied Physics LettersHHB 1981HHBg38HHBg+7HHBg511-513HHBg%B\\As01mesant\Procite Databases\WCS\Articles\Fleming MW 1981 04.pdfBHHBg,1.4.2 "Shallow" Extended-Wave-Function Levels.x=s/ Solid-State Communicationsx=s/ 1969@_L<@_4<L,7@_L<@_4<L13@_L<@_4<L921-925@_L<@_4<L%;\\Aeron\Procite Databases\WCS\Articles\Stillman GE 1969.j963HHBg656502bN~.T7\7,\L<@_4<L,A1969d643700007@_L<@_4<L65660-z;@3LStormer, H. L. //Dingle, R. //Gossard, A. C. //Wiegmann, W. //Sturge, M. D. L=v'Bell Tel Labs Inc/Murray Hill//Nj/07974'-=vE2-Dimensional Electron-Gas at a Semiconductor-Semiconductor InterfaceE=v02.4.2=v Solid State Commun-ications=v Article$M_dHI@_I1979$M_dHI@_I29$M_dHI@_I10-$M_dHI@_I705-709$M_dHI@_I%?\\As01mesant\Procite Databases\WCS\Articles/Stromer EL 1979.pdf?+311$M_dHI@_I- 13260.G,A1969c982600001$M_@_65670yright Statement: (c)2003 Inst. For Sci. Info0$M_@_+128$M_@_.G,A1969c982600001$M_@_65670yright Statement: (c)2003 Inst. For Sci. Info0$M_@_+128$M_@_.G,A1969c982600001$M_@_65670yright Statement: (c)2003 Inst. For Sci. Info0$M_@_+128$M_@_.G,A1969c982600001$M_@_65670yright Statement: (c)2003 Inst. For Sci. Info0$M_@_+128$M_@_.G,A1969c982600001$M_@_65670SBr#2574015 US4220488 FR9/2/1980\DE2908851A1 DE2908851C2 FR2419585A1 FR2419585B1 GB2015982A GB2015982B JP54124897A2 US4220488\'US3364084 US3421952 US3617371 US3867202'Tietjen2 et al., Preparation. . . Epitaxial I.sub.m Ac.sub.1-x P.sub.x using. . . phosphineJ. Electrochem. Soc., vol. 116, No. 4, Apr. 1969, pp. 492-494. Allen, H. A., Orientation Dependence of Epitaxial I.su2b.m Aa.sub.x P.sub.1-x on GaAs. Ibid., vol. 117, No. 11, Nov. 1970, pp. 1417-1419. Tietjen et al., Vapor-Phase Growth of Several III-V. . . SemiconductorsSolid State Technology, Oct. 1972, pp. 42-49. 2Seki et al., New Vapor Growth Method for Gap. . . Japanese J. Appl. Phys., vol. 12 (1973), No. 7, pp. 1112-1113."SUS4488914 US4504329 US4716048 US4717585 US4759947 US4772486 US4870030 US4992303 U2S4504331 US4533410 US4803093 US4818560 US5074954 US5168077 US4559217 US4611388 US4835005 US4853251 US4717586 US4726963 US4999315 US5070814 US4729968 US4735822 US5178904 US5232869 US4818563 US4830890 U2S4330360 US4464342 US4801468 US4801557 US5244698 US5645947S%;\\As01mesant\Procite Databases\WCS\Patents\US04220488__.pdf;'H01L 21/205; H01L 21/365+34890r(11.1.33h=r( Rca Review h=r( 19719$M_|<l>@_d>~%9329$M_|<l>@_d>~%939$M_|<3l>@_d>~%9383-3929$M_|<l>@_d>~%9%:\\Aeron\Procite Databases\WCS\Articles/Pankove JI 1971.pdf'9$M_|<l>@_d>~%99$M_|<l>@_d3>~%9)0Copyright Statement: (c)2003 Inst. For Sci. Info09$M_|<l>@_d>~%9+1189$M_|<l>@_d>~%9,A1971k7212000039$M_|<l>@_d>~3%965710v^N~ G\7/st Phonon and Defect Scattering: Response to Electric FieldsE=@q@< Journal of Applied Physics=@q@< 1970$M_܊̌/@_Čp܁41$M_܊̌@_Čp܁7$M_܊̌@_Čp܁ 3088-3091`=@q@<`=@q@<%=\/\As01mesant\Procite Databases\WCS\Articles/Wolfe CM 1976.pdf=$M_܊̌@_Čp܁)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_܊̌@_Čp܁+186/j$M_܊̌@_Čp܁,A1970g910500058$M_܊̌@_Čp܁656800>@0Wolfe, C. M. //Stillman, G. E. //Dimmock, J. O. 0=`fo'<'Ionized impurity density in n-type GaAs'=`fo'<E01.6.3 0Fast Phonon and Defect Scattering: Response to Electric FieldsE=`fo'< Journal of Applied Physics=`fo'< 1970$M_<0,@_$,<41$M_<,@_$,<2$M_<,@_$,<504-507=`fo'<=`fo'<%@\0\As01mesant\Procite Databases\WCS\Articles/Wolfe CM 1970 02.pdf@$M_<,@_$,<)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_<,@_$,<+1350m$M_<,@_$,<,A1970f611600011$M_<,@_$,<656901>1?Pankove, J. I. =pt:<*Absorption edge of impure gallium arsenide*=pt:<05.1=pt: GB2015982A GB2015982B JP54124897A2 US4220488\'US3364084 US3421952 US3617371 US3867202'Tietjenu0`~1>@Pankove, J. I. =pt:<*Absorption edge of impure gallium arsenide*=pt:<05.1=pt:1< Physical Review=pt:< 1965&$M_d/T1@_L1F d&140&$M_d/T1@_L1F d&6a&$M_d/T1@_L1F 1d& 2059-2065`=pt:<`=pt:<%B\\As01mesant\Procite Databases\WCS\Articles\Pankove JI 1965 12.pdfB&$M_d/T1@_L1F 1d&)0Copyright Statement: (c)2003 Inst. For Sci. Info0&$M_d/T1@_L1F d&+183&$M_d/T1@_L1F d&,A19657080900030&$M_d/T1@_L1F d&1 657002<@zYBonnet, Michel//Beuchet, Gerard//Koelsch, Francois//Duchemin, Jean-Pascal//Leguen, DanielYMGas-phase process for the production of an epitaxial layer of indum phosphideM06.43>1?2Pankove, J. I. //Miller, E. A. //Berkeyhe*, J. E. 2h=r(Gan electroluminescent diodesh=r(11.1.33h=r( Rca Review h=r( 19719$M_|<l>@_d>~%9329$M_|<l>@_d>~%939$M_|<3l>@_d>~%9383-3929$M_|<l>@_d>~%9%:\\Aeron\Procite Databases\WCS\Articles/Pankove JI 1971.pdf'9$M_|<l>@_d>~%99$M_|<l>@_d3>~%9)0Copyright Statement: (c)2003 Inst. For Sci. Info09$M_|<l>@_d>~%9+1189$M_|<l>@_d>~%9,A1971k7212000039$M_|<l>@_d>~3%965710o/_N~ 3>@2Pankove, J. I. //Miller, E. A. //Berkeyhe*, J. E. 2h=r(Gan electroluminescent diodesh=r(11.1.33h=r( Rca Review h=r( 19719$M_|<l>@_d>~%9329$M_|<l>@_d>~%939$M_|<3l>@_d>~%9383-3929$M_|<l>@_d>~%9%?\\As01mesant\Procite Databases\WCS\Articles/Pankove JI 1971.pdf,9$M_|<l>@_d>~%99$M_|<l>3@_d>~%9)0Copyright Statement: (c)2003 Inst. For Sci. Info09$M_|<l>@_d>~%9+1189$M_|<l>@_d>~%9,A1971k7212000039$M_|<l>@_d3>~%9657104{;@4:Weisbuch, C. //Dingle, R. //Gossard, A. C. //Wiegmann, W. :=n 'Bell Tel Labs Inc/Murray Hill//Nj/07974'=n 4_Optical Characterization of Interface Disorder in GaAs-Ga1-xAlxAs Multi-Quantum Well Structures_=n 03.1.2=n  Solid Stat4e Communications=n  Article$M_l\@_Tl1981$M_l\@_Tl38$M_l\@_Tl48$M_l\@_Tl709-712$M_l\@_Tl%?\\As01mesant\Procite Databases\WCS\Articles/Weisbuch C 1981.pdf?f=n +47344$M_l\@_Tl133305{;1?4JWeisbuch, C. //Miller, R. C. //Dingle, R. //Gossard, A. C. //Wiegmann, W. J=vA'Bell Tel Labs Inc/Murray Hill//Nj/07974'= ;kN~Hd75{;@4JWeisbuch, C. //Miller, R. C. //Dingle, R. //Gossard, A. C. //Wiegmann, W. J=vA'Bell Tel Labs Inc/Murray Hill//Nj/07974'=5vAmIntrinsic Radiative Recombination From Quantum States in GaAs-a-Lambda-XGa1-xAs Multi-Quantum Well Structuresm=vA03.3.15=vA Solid State Communications=vA Article$M_@_Z;1981$M_@_Z;375$M_@_Z;3$M_@_Z;219-222$M_@_Z;%@\\As01mesant\Procite Databases\WCS\Articles/Weisbuch 1981 10.pdf@5Vf=vA+272$M_@_Z;133406HF+223HF,A1973o501800048HF65720yright Statement: (c)2003 Inst. For Sci. Info06HF+223HF,A1973o501800048HF65720yright Statement: (c)2003 Inst. For Sci. Info06HF+223HF,A1973o501800048HF65720yright Statement: (c)2003 Inst. For Sci. Info06HF+223HF,A1973o501800048HF65720yright Statement: (c)2003 Inst. For Sci. Info06HF+223HF,A1973o501800048HF65720$M_4FN~t7:>@2Astles, M. G. //Smith, F. G. H. //Williams, E. W. 28+=vB,Indium-phosphide .2. Liquid epitaxial-growth,8+=vB:06.08+=vB &Journal of the Electrochemical Society&8+=vB 1973$M_@_120$M_:@_12$M_@_ 1750-1757 $M_@_%9\\As01mesant\Procite Databases\WCS\Articles/Astles MG.pdf,=:vB =vB)0Copyright Statement: (c)2003 Inst. For Sci. Info0$M_@_+139$M_@_,A1973r:<043400037$M_@_65760;>@@Bimberg, D. //Mars, D. //Miller, J. N. //Bauer, R. //Oertel, D. @B=vStructural-changes of the interface, enhanced interface incorporation of; acceptors, and luminescence efficiency degradation in gaas quantum-wells grown by molecular-beam epitaxy upon growth interruptionB=v06.1.4B;=v (Journal of Vacuum Science & Technology B(B=v 1986$M_@_4$M_@_4<//Ivanov, S. V. //Meltser, B. Y. //Kopev, P. S. //Alferov, Z. I. 0==(2p29Radiative recombination in type-ii gasb/gaas quantum dots90==(2p2<03.5.20==(2p2 Applied Physics Letters0==(2p2 Jul 31 1995 8$M_t;d=@_\=8678$M_t;;@_657702bN~l78$@_$y4657409>@gWilliams, E. W. //Elder, W. //Astles, M. G. //Webb, M. //Mullin, J. B. //Straugha*, B. //Tufton, P. J. g= r6Indium-phosphide .1. Photoluminesc9ence materials study6= r06.0= r &Journal of the Electrochemical Society&= r 19739J$M_Applied Physics LettersY= q# Aug 26 1996 8$M_t;d=@_\=8698$M_t;d=@_\=898$M_t;d=@_\=>8 1226-1228 8$M_t;d=@_\=8%B\\As01mesant\Procite Databases\WCS\Articles\Kirstaedter N 1996.pdf,= q#= q#>)0Copyright Statement: (c)2003 Inst. For Sci. Info08$M_t;d=@_\=8*+We present gain measurements and calculations for inas/gaas quantum dot injection lasers. Measur>ements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(+/-1)x10(4) cm(-1) at 80 a cm(-2) calculation>s including realistic quantum dot energy levels, dot size fluctuation, nonthermal coupling of carriers in different dots, and band filling effects corroborate this result. A large maximum different>ial gain of 2x10(-12) cm(2) at 20 a cm(-2) is found. The width of the gain spectrum is determined by participation of excited quantum dot states. We record a low transparency current density of 20 ?vimov, S. S. //Gosele, U. //Heydenreich, J. C=sbInas-gaas quantum pyramid lasers: in situ growth, radiative lifetimes and polarization propertiesbC?=s10.2.4C=s VJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review PapersVC=s? Feb 1996 $M_@_35$M_@_2b$M_@_ 1311-1319 $M_@_%9^N~t7<nd lineup (type ii) are formed in a gaas matrix using molecular beam epitaxy. The dots are growing in a self-organized way on a gaas(100) surface upon deposition of 1.2 Nm gasb followed by a gaas c<ap layer. Plan-view transmission electron microscopy studies reveal well developed rectangular-shaped gasb islands with a lateral extension of similar to 20 nm. Intense photoluminescence (pl) is ob<served at an energy lower than the gasb wetting layer luminescence. This line is attributed to radiative recombination of 0d holes located in the gasb dots and electrons located in the surrounding <regions. The gasb quantum dot pl dominates the spectrum up to high excitation densities and up to room temperature. (C) 1995 american institute of physics.%8$M_t;d=@_\=8+< f1088$M_t;d=@_\=8,Rl9768$M_t;d=@_\=865780=M<@\ Siethoff, H. =~q<0Univ Wurzburg,Inst Phys/W-8700 Wurzburg//Germany0=~q<7The Plasticity of Elemental and Co=mpound Semiconductors7=~q<07.2.2=~q< Semiconductors and Semimetals=~q< Review=$M_ @_ 1992$M_ @_ 37$M_ @_ 143-187$M_ @_ 132$M_ =@_ %?\\As01mesant\Procite Databases\WCS\Articles\Siethoff H 1992.pdf?$M_ @_ +15$M_ @_ ,Silicon Single-Crystals/ In>>1?Kirstaedter, N. //Schmidt, O. G. //Ledentsov, N. N. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Maximov, M. V. //Kopev, P. S. //Alferov, Z. I. Y,\N~=$M_ @_ 1992$M_ @_ 37$M_ @_ 143-187$M_ @_ 132$M_ =@_ %?\\As01mesant\Procite Databases\WCS\Articles\Siethoff H 1992.pdf?$M_ @_ +15$M_ @_ ,Silicon Single-Crystals/ In=-Doped Gaas/ High-Temperature Deformation/ Stacking-Fault Energy/ Solid-Solution Alloys/ Lower Yield-Point/ As-Grown Gaas/ Self-Diffusion/ Dynamical Recovery/ Dislocation-Structure$M_ =@_ 62300>>@Kirstaedter, N. //Schmidt, O. G. //Ledentsov, N. N. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Maximov, M. V. //Kopev, P. S. //Alferov, Z. I. Y>= q#RGain and differential gain of single layer inas/gaas quantum dot injection lasersRY= q#10.2.4Y= q# ?>1?Bimberg, D. //Ledentsov, N. N. //Grundmann, M. //Kirstaedter, N. //Schmidt, O. G. //Mao, M. H. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Alferov, Z. I. //Ru?vimov, S. S. //Gosele, U. //Heydenreich, J. C=sbInas-gaas quantum pyramid lasers: in situ growth, radiative lifetimes and polarization propertiesbC?=s10.2.4C=s VJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review PapersVC=s? Feb 1996 $M_@_35$M_@_2b$M_@_ 1311-1319 $M_@_%9b$M_@_ 1311-1319 $M_@_%9Eu~>a cm(-2). All experiments are carried out at liquid nitrogen temperature. (C) 1996 american institute of physics.+8$M_t;d=@_\=8+1018$M_t;d=@_\=8> ],'Well Lasers/ Threshold/ A1996vd63200017'8$M_t;d=@_\=865790?>@Bimberg, D. //Ledentsov, N. N. //Grundmann, M. //Kirstaedter, N. //Schmidt, O. G. //Mao, M. H. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Alferov, Z. I. //Ru?vimov, S. S. //Gosele, U. //Heydenreich, J. C=sbInas-gaas quantum pyramid lasers: in situ growth, radiative lifetimes and polarization propertiesbC?=s10.2.4C=s VJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review PapersVC=s? Feb 1996 $M_@_35$M_@_2b$M_@_ 1311-1319 $M_@_%>?\\As01mesant\Procite Databases\WCS\Articles\Bimberg D 1996.pdf,H6=sH6=s)0Copyright Statement: (c)2003 Inst. For Sci. Info0@e lasing from stacked inas/gaas quantum dots grown by metalorganic chemical vapor deposition|=r*10.2.4=r* Applied Physics@ Letters=r* Jul 7 1997 $M_@_|/71$M_@_|/1$M_@_|/22-24@$M_@_|/%@\\Aeron\Procite Databases\WCS\Articles/Heinrichsdorff F 1997.pdf'=r*=r*)0Copyright Sta? @_65800#SC 7 ?$M_@_*(We have realized injection lasers based on inas-gaas and ingaas-gaas quantum pyramids (qps) with a lateral size ranging from 80 to 140 angstrom. The structures wi?th relatively small dots (similar to 80 angstrom) exhibit properties predicted earlier for quantum dot (qd) lasers such as low threshold current densities (below 100 acm(-2)) and ultrahigh characte?ristic temperatures (t-0 = 350-435 k). For operation temperatures above 100-130 k, t-0 decreases and the threshold current density increases (up to 0.95-3.3 Kacm(-2) at room temperature) due to car?rier evaporation from qps. Larger inas qps (similar to 140 angstrom) providing better carrier localization exhibit saturation of the ground-state emission and enhanced nonradiative recombination ra? te at high excitation densities. The radiative lifetime shows a weak dependence on the dot size in the range 80-140 angstrom being close to similar to 1.8-2 ns, respectively. A significant decrease? in radiative lifetime is realized in vertically coupled quantum dots formed by a qp shape-transformation effect. The final arrangement corresponds to a three-dimensional tetragonal array of inas i? slands inserted in a gaas matrix each composed of several vertically merging inas parts. We achieved injection lasing in such an array for the first time.($M_@_+1? 09$M_@_,Strained-Layer Superlattices/ Surfaces/ Quantum Dots/ Injection Lasers/ Molecular Beam Epitaxy/ Polarization/ Lifetime/ A1996ud94100109$M_? @_65800@>1?jHeinrichsdorff, F. //Mao, M. H. //Kirstaedter, N. //Krost, A. //Bimberg, D. //Kosogov, A. O. //Werner, P. j=r*|Room-temperature continuous-wav@_|/65810N~|7@>@jHeinrichsdorff, F. //Mao, M. H. //Kirstaedter, N. //Krost, A. //Bimberg, D. //Kosogov, A. O. //Werner, P. j=r*|Room-temperature continuous-wav@e lasing from stacked inas/gaas quantum dots grown by metalorganic chemical vapor deposition|=r*10.2.4=r* Applied Physics@ Letters=r* Jul 7 1997 $M_@_|/71$M_@_|/1$M_@_|/22-24@$M_@_|/%E\\As01mesant\Procite Databases\WCS\Articles/Heinrichsdorff F 1997.pdf,=r*=r*)0Copyrigh@t Statement: (c)2003 Inst. For Sci. Info0$M_@_|/*,We report on quantum dot (qd) lasers made of stacked inas dots grown by metalorganic chemical vapor deposition. Su@ccessful growth of defect-free binary inas/gaas qds with high lateral density (d(l) greater than or equal to 4 x 10(10) cm(-2)) was achieved in a narrow growth parameter window. The room-temperatur@e photoluminescence (pl) intensity is enhanced up to a factor of 3 and the pl peak width is reduced by more than 30% when a thin layer of in0.3ga0.7as Is deposited onto the inas qds. A qd laser wit@h a single sheet of such inas/ingaas/gaas qds exhibits threshold current densities as low as 12.7 And 181 a/cm(2) at 100 and 300 k, respectively. Lasers with threefold stacked qds show ground-stateA>1?Grundmann, M. //Bimberg, D. 6=r4*,Theory of random population for quantum dots,6=r4*03.5.26 Review B-Condensed Matter"HHB "Physical Review B-Condensed Matter"HHB^N~*,7Bductor systems and proposed to be intricately bound to the inhomogeneity of the qd ensemble in conjunction with a competing nonradiative recombination channel observed for the excited hole states. BCarrier capture is found to be a cascade process with the initial capture into excited states taking less than a few picoseconds and the multiphonon (involving three lo phonons) relaxation time of B the first excited hole state being 40 ps. The \001] hole state presents a relaxation bottleneck that determines the ground-state population time after nonresonant excitation. For the small self-orgB anized inas/gaas qd's the intradot carrier relaxation is shown to be faster than radiative (>1 ns) and nonradiative (approximate to 100 ps) recombination explaining the absence of a ''phonon bottleB neck'' effect in the pl spectra.HHB+150HHB,Radiative Recombination/ Electronic-Structure/ Exciton Relaxation/ Carrier RelB axation/ Phonon Bottleneck/ Bound Excitons/ Box Systems/ Spectroscopy/ Gaas/ Photoluminescence/ A1997yd47500067HHB65830C2 JP53028378A2 JP57003213B4 JP57003214B4 US4233109 US4371412G=o&"US3961103 US4123663=o&"HAbstract DB II, H. L. Garvin, Bull.C2 JP53028378A2 JP57003213B4 JP57003214B4 US4233109 US4371412G=o&"US3961103 US4123663=o&"HAbstract DB II, H. L. Garvin, Bull.C2 JP53028378A2 JP57003213B4 JP57003214B4 US4233109 US4371412G=o&"US3961103 US4123663=o&"HAbstract DB II, H. L. Garvin, Bull.g, D. //Kirstaedter, N. //Ledentsov, N. N. //Alferov, Z. I. //Kopev, P. S. //Ustinov, V. M. bp=ЪsIngaas-gaas quantum-dot lasers8hN~27$B>@&vHeitz, R. //Veit, M. //Ledentsov, N. N. //Hoffmann, A. //Bimberg, D. //Ustinov, V. M. //Kopev, P. S. //Alferov, Z. I. vHHBDEnergy relaxation bBy multiphonon processes in inas/gaas quantum dotsDHHB03.5.5HHB "Physical Review B-Condensed Matter"HHBB Oct 15 1997 HHB56HHB16HHB 10435-10445 HHBB%?\\As01mesant\Procite Databases\WCS\Articles\Heitz R 1997 10.pdf?HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHBB*Carrier relaxation and recombination in self-organized inas/gaas quantum dots (qd's) is investigated by photoluminescence (pl), pl excitation (ple), and time-resolved pl spectroscopyB. We demonstrate inelastic phonon scattering to be the dominant intradot carrier-relaxation mechanism. Multiphonon processes involving up to four lo phonons from either the inas qd's, the inas wettBing layer, or the gaas barrier are resolved. The observation of multiphonon resonances in the ple spectra of the qd's is discussed in analogy to hot exciton relaxation in higher-dimensional semiconC=o&" US4233109 =o&"JP=o&" 11/11/1980 =o&"GJP53028377AC2 JP53028378A2 JP57003213B4 JP57003214B4 US4233109 US4371412G=o&"US3961103 US4123663=o&"HAbstract DB II, H. L. Garvin, Bull.. N. //Alferov, Z. I. //Kopev, P. S. //Ustinov, V. M. bp=ЪsIngaas-gaas quantum-dot lasers^N~W7TFg-range ordering of the inhomogeneous phase is the elastic interaction. The theory of the formation of multisheet structures of islands is reviewed, which is governed by both equilibrium ordering aFnd kinetic-controlled ordering. For the islands of the first sheet, an equilibrium structure is formed, and for the next sheets, the structure of the surface islands meets the equilibrium under theF constraint of the fixed structures of the buried islands. The experimental situation for the fabrication technology of ordered arrays of semiconductor quantum dots is analyzed, including a discusF sion of both single-sheet and multiple-sheet ordered arrays. [S0034-6861(99)01304-5].@!$M_l*\,@_T,4l!+140!$M_l*\,@_T,4l!,!Molecular-Beam Epitaxy/F Chemical-Vapor-Deposition/ X-Ray-Diffraction/ Quantum-Dot Structures/ Transmission Electron-Microscopy/ Scanning-Tunneling-Microscopy/ Self-Organized Growth/ Reflectance Anisotropy Spectroscopy/ PeriF uodic Domain-Structures/ Stranski-Krastanow Growth/ 000082039400008!!$M_l*\,@_T,4l!65860Gles\Stier O 1999 02.pdf:HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB*We present a systematic investigation of Gles\Stier O 1999 02.pdf:HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB*We present a systematic investigation of Gles\Stier O 1999 02.pdf:HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB*We present a systematic investigation of Gles\Stier O 1999 02.pdf:HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB*We present a systematic investigation of  ;kN~77D>@0bBimberg, D. //Kirstaedter, N. //Ledentsov, N. N. //Alferov, Z. I. //Kopev, P. S. //Ustinov, V. M. bp=ЪsIngaas-gaas quantum-dot lasersDp=Ъs10.2.4p=Ъs 6Ieee Journal of Selected Topics in Quantum Electronics6p=Ъs Apr 1997 8D$M_t;d=@_\=J838$M_t;d=@_\=J828$M_t;d=@_\=J8196-2058$M_t;d=@_\=J8%>\\As01mesant\Procite DatabasesD\WCS\Articles\Bimberg D 1997.pdf,=Ъs=Ъs)0Copyright Statement: (c)2003 Inst. For Sci. Info08$M_t;d=@_\=J8D*Quantum-dot (qd) lasers provide superior lasing characteristics compared to quantum-well (qw) and qw wire lasers due to their delta like density of states, record threshold current densities oDf 40 a.cm(-2) at 77 k and of 62 a.cm(-2) at 300 k are obtained while a characteristic temperature of 385 k is maintained up to 300 k. The internal quantum efficiency approaches values of similar toD 80%. Currently, operating qd lasers show broad-gain spectra with full-width at half-maximum (fwhm) up to similar to 50 mev, ultrahigh material gain of similar to 10(5) cm(-1), differential gain ofD similar to 10(-13) cm(2) and strong nonlinear gain effects with a gain compression coefficient of similar to 10(-16) cm(3). The modulation bandwidth is limited by nonlinear gain effects but can beE>1?:bLedentsov, N. N. //Ustinov, V. M. //Shchukin, V. A. //Kopev, P. S. //Alferov, Z. I. //Bimberg, D. b=HCq0GQuantum dot heterostructures: fabricati^N~27LE>@:bLedentsov, N. N. //Ustinov, V. M. //Shchukin, V. A. //Kopev, P. S. //Alferov, Z. I. //Bimberg, D. b=HCq0GQuantum dot heterostructures: fabricatiEon, properties, lasers (review)G=HCq010.2.4=HCq0 Semiconductors=HCq0 Apr 1998 E8$M_t;d=@_\= 8328$M_t;d=@_\= 848$M_t;d=@_\= 8343-3658$M_t;d=@_\= 8%A\\As01mesant\Procite DatabasEes\WCS\Articles\Ledentsov NN 1998.pdf,8$M_t;d=@_\= 88$M_t;d=@_\= 8)0Copyright Statement: (c)2003 Inst. For Sci. Info08$M_t;d=@_\=E 8*TIn the present review we summarize original results where 1) we have experimentally discovered a novel class of spontaneously ordered nanostructures, namely equilibrium arrays of three-diEmensional, coherently strained islands on crystal surfaces; 2) we have developed a theory of spontaneous formation of semiconductor nanostructures in heteroepitaxial systems; 3) we have experimentaElly demonstrated the existence of a novel class of semiconductor heterostructures, namely perfect quantum dots having an atom-like energy spectrum; we have performed a detailed investigation of theF=r>* Reviews of Modern Physics=r>* Jul 1999 !$M_l*\,@_T,4l!71!$M_l*\,@_T,F4l!4!$M_l*\,@_T,4l! 1125-1171 !$M_l*\,@_T,4l!%;\\Aeron\Procite Databases\WCS\Articles/Shchukin VA 1999.pdf'!$M_l*\,@_T,4rent in each case, the common driving force for the long-ran^N~D7E optical properties of quantum dots; 4) we have fabricated quantum dot-based injection lasers demonstrating unique charactristics, namely high-temperature stability of the threshold current and ultEra-high material gain. (C) 1998 american institute of physics.T8$M_t;d=@_\= 8+1048$M_t;d=@_\= 8,Molecular-Beam Epitaxy/ High-Index Surfaces/ CheE mical-Vapor-Deposition/ Stranski-Krastanow Growth/ Self-Organized Growth/ Gaas Matrix/ Thermodynamic Analysis/ Structural Characterization/ Optical Characterization/ Radiative Recombination/ A1998zn02E 98000018$M_t;d=@_\= 865850F>@DShchukin, V. A. //Bimberg, D. =r>*:Spontaneous ordering of nanostructures on crystal surfaces:=r>*07.4.3F=r>* Reviews of Modern Physics=r>* Jul 1999 !$M_l*\,@_T,4l!71!$M_l*\,@_T,G>1?N(Stier, O. //Grundmann, M. //Bimberg, D. (HHBcElectronic and optical properties of strained quantum dots modeled by 8-band k center dot p theoGrycHHB03.5HHB "Physical Review B-Condensed Matter"HHB Feb 15 1999 HHBG59HHB8HHB 5688-5701 HHB%:\\Aeron\Procite Databases\WCS\ArticGles\Stier O 1999 02.pdf:HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB*We present a systematic investigation of *We present a systematic investigation of /_~47G>@N(Stier, O. //Grundmann, M. //Bimberg, D. (HHBcElectronic and optical properties of strained quantum dots modeled by 8-band k center dot p theoGrycHHB03.5HHB "Physical Review B-Condensed Matter"HHB Feb 15 1999 HHBG59HHB8HHB 5688-5701 HHB%?\\As01mesant\Procite Databases\WCS\GArticles\Stier O 1999 02.pdf?HHB)0Copyright Statement: (c)2003 Inst. For Sci. Info0HHB*We present a systematic investigatioGn of the elastic, electronic, and linear optical properties of quantum dot double heterostructures in the. Frame of eight-band k.p Theory. Numerical results for the model system of capped pyramid sGhaped inas quantum dots in gaas (001) with {101} facets are presented. Electron and hole levels, dipole transition energies, oscillator strengths, and polarizations for both electron-hole and electH>h1?XASchairer, W. //Bimberg, D. //Kottler, W. //Cho, K. //Schmidt, M. A=r(CPiezospectroscopic and Magneto-optical study of Sn-acceptor in GaAsCH=r(.01.4.2 "Shallow" Extended-Wave-Function Levels.=r( "Physical Review B-Condensed Matter"=r(H 1976$M_@_|+13$M_@_|+8$M_@_|+ 3452-3467 $M_@_|+%:\\Aeron=xUrv  Vertical field effect transistor =xUrv 09.1.1=x^N~ !7dHesant\Procite Databases\WCS\Articles/Schairer W 1976.pdf,=r(=r()0Copyright Statement: (c)2003 Inst. For Sci. Info0$HM_@_|++99$M_@_|+,Bq215$M_@_|+65880I<@Cho, A.Y.//DiLorenzo, James V.=xUrv  Vertical field effect transistor =xUrv 09.1.1=xIUrv 706518=xUrv  US4236166 =xUrv US=xUrv  11/25/1980 =xUIrv lCA1142274A1 EP0031366A1 EP0031366B1 EP0031377A1 JP56501181T2 JP56501427T2 JP62055315B4 US4236166 WO8100174A1l=xUrv 1US3412297 US3823352 US3906541 US4I075652 US41575561=xUrv <IEEE Trans. on Elec. Dev.-vol. ED-21, No. 1, Jan. 1974, pp. 113-118 Lecrosnier et al. IEEE Inter. Solid-State Cir. Conf.-Feb. 12, 1975, pp.I 66-67 Vergnolle et al. IEEE Trans. Elec. Dev.-Aug. l975, pp. 613-614 Umebachi et al. IEEE Trans. Microwave The. \A Techs.-vol. MTT.-24, No. 6-Jun. 1976 pp. 305-311-Oakes et al.<I=xUrv "+US4460910 US4507845 US4638342 US4641174 US4960718 US5396097 US6163041 US6207977 US4538165 US4554569 US4601096 US4624004 US4833095 US4837175 US5914504 US5920088 US4559547 US456895I8 US4724220 US4743951 US4935789 US4951099 US5929482 US5963800 US4379005 US4404732 US4587540 US4587541 US4757358 US4829347+=xUrv %;\\As01mesant\Procite Databases\WCS\PIatents\US04236166__.pdf;=xUrv ' H01L 29/80 =xUrv +30=xUrv 940Transport in NanostructuresGw7g \lJ=>t?v"Ferry, D. K.//Goodnick, Stephen M.d=8lq\d=8lq\d=8lq\Transport in NanostructuresJd=8lq\ Cambridge $M_@_ |Cambridge University Press$M_@_ |1999$M_@_JB |%None$M_@_ |65910K>>Chow, W.W.//Koch, S.W.HC@Semiconductor Laser Fundamentals: Physics of the Gain Materials@HCNew YorkKHC0SpringerHC01999HC0%None65920L;;@ Herman, F =t@@=The Electronic Energy Band Structure of Silicon and Germanium==t@@!01.3.1 Electron Band CalLculations!=t@@ Proceedings of the IRE=t@@195569$M_L94?9@_,?9B,6969$M_L94?9@_,?9B,69L4369$M_L94?9@_,?9B,69170369$M_L94?9@_,?9B,69%=\\As01mesant\Procite Databases\WCS\Articles\Herman F 1955.pdf,:=t@@L,:=t@@60420M6 US 12/2/1980 gBE0879342A CA1140661A1 DE2941476A1 FR2438914A1 IL0058443A0 IT1123839A JP55053474A2 NL7907625A US4236296g US3771219 Electrochemical Soc. Journal, Selective Etching of M6 US 12/2/1980 gBE0879342A CA1140661A1 DE2941476A1 FR2438914A1 IL0058443A0 IT1123839A JP55053474A2 NL7907625A US4236296g US3771219 Electrochemical Soc. Journal, Selective Etching of >nGdtM<@VAnderson, Stephen I.//Scholl, Frederick R.//Woolhouse, Geoffrey R.//Huggins, Harold A.V8Etch method of cleaving semiconductor diode laser wafers808.4186590 US423629M6 US 12/2/1980 gBE0879342A CA1140661A1 DE2941476A1 FR2438914A1 IL0058443A0 IT1123839A JP55053474A2 NL7907625A US4236296g US3771219 Electrochemical Soc. Journal, Selective Etching of MGaAs Crystals in H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 H.sub.2 O Systemsby Lida et al., vol. 118, pp. 768-771, 1971."+US4670966 US4672736 US5053836 US5081002 US5824595 US5882988 US4531217 US4610079 UMS4814296 US4841532 US4927778 US5043796 US5976901 US6077720 US4769342 US4775645 US6101204 US6140603 US4689125 US4758532 US5196378 US5418190 US5593815 US5621746 US4306351 US4412234 US4883771 US4904617 UMrS6172999 US6335559+%;\\As01mesant\Procite Databases\WCS\Patents\US04236296__.pdf;' B01J 17/0 +30950N>"?,Chow, W. W.//Koch, S.W.//Sargent, Murray IIIA=owA=owA=owSemiconductor LasNer PhysicsA=owBerlinn$M_ntn@_lnnSpringern$M_ntn@_lnn1997n$M_ntn@_lnn%N7Nonen$M_ntn@_lnn65930>=nX_ 12/2/1980 >=nX_ODE2923683A1 US4237427>=nX_US3946335 US4109217>=nX_"IUS4375067 US4483004 US4699446 US4707838 US4792956 US4796265 US4884280 OUS4912717 US4484331 US4503541 US4771431 US4774710 US4955026 US4995045 US5444728 US5473623 US4625315 US4639924 US5200967 US5218612 US4872173 US4878225 US5270736 US5379145 US4319203 US4347610 US4748632 hN~al7O<@Holland, John M.>=nX_!Apparatus for stabilizing a laser!>=nX_12.2.3>=nX_O287565>=nX_ US4237427 >=nX_US>=nX_ 12/2/1980 >=nX_ODE2923683A1 US4237427>=nX_US3946335 US4109217>=nX_"IUS4375067 US4483004 US4699446 US4707838 US4792956 US4796265 US4884280 OUS4912717 US4484331 US4503541 US4771431 US4774710 US4955026 US4995045 US5444728 US5473623 US4625315 US4639924 US5200967 US5218612 US4872173 US4878225 US5270736 US5379145 US4319203 US4347610 US4748632 OUS4763334 US4807239 US4842358 US5123023 US5140603 US6347105I>=nX_%;\\As01mesant\Procite Databases\WCS\Patents\US04237427__.pdf;>=nX_Ok' H01S 3/13 >=nX_+33>=nX_960Pna US4237474 t=naEUS3508100 US3872418 US3996526 US4003074 US4119363 US4152713 US4167744Et=na"qUS4544231 US462768Pna US4237474 t=naEUS3508100 US3872418 US3996526 US4003074 US4119363 US4152713 US4167744Et=na"qUS4544231 US462768Pna US4237474 t=naEUS3508100 US3872418 US3996526 US4003074 US4119363 US4152713 US4167744Et=na"qUS4544231 US462768n8$M_@_ܨn2$M_@_ܨn141-&8$M_@_ܨn2$M_@_ܨn141-&w1aN~;7SU>@ Gunn, J. B.  =vb<BProperties of a free steadily travelling electrical domain in gaasB=vb< 'Ibm Journal of RSesearch and Development'=vb< 1966$M_ @_E 10$M_ @_E 4$M_ @_E S300-309=vb<=vb<%7\\As01mesant\Procite Databases\WCS\Articles\Gunn JB.pdf7$M_ @_E )0Copyright SStatement: (c)2003 Inst. For Sci. Info0$M_ @_E +72$M_ @_E ,A19668186600003$M_ @_E 65950TU>@+Braslau, N. //Gunn, J. B. //Staples, J. L. +8=p6 <9Metal-semiconductor contacts for gaas bulk effect devices98=p6 T< Solid-State Electronics8=p6 < 1967$M_|l@_d@ |10$M_|l@_d@ |5$M_|l@_d@T |381-3838=p6 <8=p6 <%>\\As01mesant\Procite Databases\WCS\Articles/Braslau N 1967.pdf>$M_|l@_d@ |U@W8=0 q8@ 1976 $M_ ܜ @_Ԝ  31 $M_ ܜ @_Ԝ  1-2 $M_ ܜ @_Ԝ  69-88 U$M_ ܜ @_Ԝ  %<\\Aeron\Procite Databases\WCS\Articles//Stillman GE 1976.pdf' $M_ ܜ @_Ԝ   $M_ ܜ @_Ԝ  )0Copyright Statement: (c)2003 UE~7|R`b@_bx 73$M_`b@_bx 16$M_`b@_bx  2252-2255 $M_`b@_bx %A\\As01mesant\Procite Databases\WCRS\Articles\Drexler H 1994 10.pdfA$M_`b@_bx *JImbedding self-assembled lens-shaped InGaAs quantum dots in a suitably designed field-effect-type GaAs/AlAs heterostructureR allows us to charge the lowest discrete quantum levels in the dots with single electrons. Because of their small diameters of about 20 nm the Coulomb charging energy is significantly smaller than theR quantization energies. We extract energy spacings of about 41 meV between the s-like ground state and the first excited p-like state from capacitance as well as infrared transmission spectroscopy at Rlow temperatures and under application of high magnetic fields.J$M_`b@_bx +262$M_`b@_bx , Atoms/ Gaas $M_`b@_bxR 13630Sent: (c)2003 Inst. For Sci. Info0$M_ @_E +72$M_ @_E ,A19668186600003$M_ @_E 65950pyright StatemSent: (c)2003 Inst. For Sci. Info0$M_ @_E +72$M_ @_E ,A19668186600003$M_ @_E 65950pyright StatemSent: (c)2003 Inst. For Sci. Info0$M_ @_E +72$M_ @_E ,A19668186600003$M_ @_E 65950pyright StatemSent: (c)2003 Inst. For Sci. Info0$M_ @_E +72$M_ @_E ,A19668186600003$M_ @_E 65950f4N~X#JP55013938A2 JP55013939A2 US4239554# =0pzUS3015762 US4109271 =0pz>M. H. Brodsky et al. Hydrogenation \A Doping OfX Amorphous GaAs \A Semiconductor Devices Made Therefrom, IBM Technical Disclosure Bulletin, vol. 20, pp. 4962-4963, (1978). L. E. Stone et al. Integrally Composed Variable Energy Gap Photovoltaic CellXs, Progress in Astronautics \A Rocketry, vol. III, (1961), pp. 299-315.> =0pz"US4478654 US4498092 US5091334 US5143808 US4581620 US4582721 US4889783 US4971872 US44X60670 US4465750 US4860076 US4889782 US4999270 US5008171 US5545503 US5591987 US4522663 US4524237 US4591892 US4600670 US5144367 US5262350 US4451838 US4460669 US4613382 US4625224 US5315132 US5543636 US58X59443 USRE34658 US6043105 US6180991 US6346716 US6355941 US4377723 US4402762 US4582770 US4587187 US4727044 US4766477 US5303007 US5313077 USRE35198 US6028264 US6221701 USRE37441 =X0pz%;\\As01mesant\Procite Databases\WCS\Patents\US04239554__.pdf; =0pz' H01L 31/6 =0pz+46 =0Xpz980Y1993H0F63H0F5H0F571-573H0F$FHERIOT WATT UNY1993H0F63H0F5H0F571-573H0F$FHERIOT WATT UNY1993H0F63H0F5H0F571-573H0F$FHERIOT WATT UN} N~?7VU>@-Hayes, J. R. //Levi, A. F. J. //Wiegmann, W. -!Hot-electron spectroscopy of gaas! Physical Review Letters 19855414 1570-1572 %@\\As01mesant\Procite DatabVzases\WCS\Articles\Hayes JR 1985 04.pdf@)0Copyright Statement: (c)2003 Inst. For Sci. Info0+102,Aew3365980W}F?~F?4Gershenzon, M..Radiative Recombination in the III-V Compounds.O01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionOHFWWillardson, R.K.//Beers, A.C.Eds.Semiconductors and SemimetalsHFAcademic PressHF1967305W 66100X<@Yamazaki, Shunpei =0pz-Semiconductor photoelectric conversion device- =0pz11.3.6=0Xpz0 =0pz US4239554 =0pzUS =0pz 12/16/1980 =0pzYK?K?>PBOLGER, JA//KAR, AK//WHERRETT, BS//PRIOR, KA//SIMPSON, J//WANG, SY//CAVENETT, BCPH0FeCARRIER DYNAMICS AND EMISSION-LINE NARROWING IN N-TYPE ANYD P-TYPE MOLECULAR-BEAM GROWN ZNSE EPILAYERSeH0F00.0H0F APPLIED PHYSICS LETTERSH0FY1993H0F63H0F5H0F571-573H0F$FHERIOT WATT UN$FHERIOT WATT UN-573H0F$FHERIOT WATT UN;!Q0`< , 6 \*4444 $ 4,d+44<DTL\4dltd* 5    +  5 55 $5,5  45<5 !"," $$D5%4'<(L5)T5+L,D-T.\/l0|0 t0d1\52l*4d5568:;<t*>l5> ?@ABDD E|5Ft5HHIK5MNP5P Q RS$T5T,U4V5WDX5Y<ZL\T]\_*adblcte|e5f5hhh 5j5klnp5qrs5tuvl+vx5yz{}5~~   5t+5$, 5< 64DL 6T+zpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&YK?@>PBOLGER, JA//KAR, AK//WHERRETT, BS//PRIOR, KA//SIMPSON, J//WANG, SY//CAVENETT, BCPH0FeCARRIER DYNAMICS AND EMISSION-LINE NARROWING IN N-TYPE ANYD P-TYPE MOLECULAR-BEAM GROWN ZNSE EPILAYERSeH0F00.0H0F APPLIED PHYSICS LETTERSH0FY1993H0F63H0F5H0F571-573H0F$FHERIOT WATT UNYIV, DEPT PHYS, EDINBURGH EH14 4AS, MIDLOTHIAN, SCOTLAND,FH0F%A\\As01mesant\procite databases\WCS\Articles\Bolger JA 1993 08.pdfAH0FY);Times Cited:9 Bibliography:20 Copyright 2003 SciSearch Plus;H0F*Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a tranYsient-grating technique. For photoexcitation levels in the 10(17)-10(18) cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8 x 10(-9) cm3 s-1Z STATUS SOLIDI B-BASIC RESEARCH&H0F2003H0F237H0F2H0FZR1-R2H0F$Inst Radio Phys & Elect, 92 Acharya Prafulla Chandra Rd, Calcutta 700009, W Bengal, India Inst Radio Phys & Elect, Calcutta 700009, W Bengal,Z IndiaH0F%6\\Aeron\procite databases\WCS\Articles\Nag BR 2003.pdf6H0F);Times Cited:0 Bibliography:13 Copyright 2003 SciSearchZD+0H0F66120^N~p7Y. For densities exceeding approximately 2 x 10(18) cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as beingY due to stimulated radiative recombination.H0F+9H0F66110ZK?@HNag, BRH0F!On the band gap of indium nitride!H0F00.0H0F &PHYSICAZ STATUS SOLIDI B-BASIC RESEARCH&H0F2003H0F237H0F2H0FZR1-R2H0F$Inst Radio Phys & Elect, 92 Acharya Prafulla Chandra Rd, Calcutta 700009, W Bengal, India Inst Radio Phys & Elect, Calcutta 700009, W Bengal,Z IndiaH0F%;\\As01mesant\procite databases\WCS\Articles\Nag BR 2003.pdf;H0F);Times Cited:0 Bibliography:13 Copyright 2003 SciSZearch Plus;H0F*CThe controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct-gap[US 2/17/1981 _CA1134486A1 DE2967561C0 EP0006723A2 EP0006723A3 EP0006723B1 JP03006676B4 JP55011400A2 US4251780_P. J. DeWaard, Stripe-Geometry D. H. Lasers with Linear Output/Current Charac[teristics,Electronics Letters, vol. 13, No. 14, pp. 400-401, Jul. 1977. N. Matsumoto et al., Semiconductor Lasers with Bent Guide of Planar Structure,Japan Journal of Applied Physics, vol. 16, No. 10,[ 1000abases\WCS\Patents\US04251780__.pdf6' H01S 3/19 +35[ 1000ents\US04251780__.pdf6' H01S 3/19 +35[ 10003 P@pL7[+351000\:S?:S?R.Granatstein, V.L.//Parker, R.//Armstrong, C.M..;Power versus frequency for high-frequency microwave devices;09.0 Proceedings of the IEEEHF\41999875702-71666130]X?@\ BRILLSON, LJ HFATRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITYAHF02.2H]F PHYSICAL REVIEW LETTERSHF1978HF40HF4]HF260-263HF$/XEROX CORP, WEBSTER RES CTR, WEBSTER, NY, 14580/HF%C\\As01mesant\procite databas]es\WCS\Articles\Brillson LJ 1978 01.pdfCHF)=Times Cited:204 Bibliography:17 Copyright 2003 SciSearch Plus=HF+204](HF66140^IL0061616A0 JP56112764A2 JP63059269B4 NL0187042B NL0187042C NL8007005A US4255211p=0pYUS2919299 US3015762 US3046459 US3186873 US4015280 US4017332 US4128733 US41797^IL0061616A0 JP56112764A2 JP63059269B4 NL0187042B NL0187042C NL8007005A US4255211p=0pYUS2919299 US3015762 US3046459 US3186873 US4015280 US4017332 US4128733 US41797^IL0061616A0 JP56112764A2 JP63059269B4 NL0187042B NL0187042C NL8007005A US4255211p=0pYUS2919299 US3015762 US3046459 US3186873 US4015280 US4017332 US4128733 US41797^IL0061616A0 JP56112764A2 JP63059269B4 NL0187042B NL0187042C NL8007005A US4255211p=0pYUS2919299 US3015762 US3046459 US3186873 US4015280 US4017332 US4128733 US41797Brr2& +^., Design of High Efficiency Monolithic Stacked Multijunction Solar Cells, Conf. Record, 13th IEEE Photovoltaic Specialists Conf., (1978), pp. 886-891.p=0p"SUS43^87265 US4400221 US4996577 US5032884 US5959239 US6025252 US6255580 US6278055 US4607272 US4665277 US5246506 US5403404 US4916088 US4926230 US6177706 US6198091 US5405453 US5496415 US6340788 US6352777 US44^00868 US4404421 US5063166 US5068695 US6106734 US6150603 US6297495 US6316715 US4338480 US4377723 US5679963 US5738731 US6198092 US6225668Sp=0p%;\\As01mesant\Procite D^ atabases\WCS\Patents\US04255211__.pdf;p=0p' H01L 31/4 p=0p+34p=0p1010_X?@f3BRILLSON, LJ//BACHRACH, RZ//BAUER, RS//MCMENAMIN, J3HF>CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES>HF_02.2HF PHYSICAL REVIEW LETTERSHF1979HF42HF_6HF397-401HF$QXEROX CORP, RES CTR, WEBSTER, NY, 14580 XEROX CORP, RES CTR, PALO ALTO, CA, 94304_QHF%C\\As01mesant\procite databases\WCS\Articles\Brillson LJ 1979 02.pdfCHF)=Times Cited:141 Bibliography:30 Copyright 2003 S_nciSearch Plus=HF+141HF66150`}Y?[?pMONCH, WFROLE OF VIRTUAL GAP STATES AND DEFECTS IN METAL-SEMICONDUCTOR CONTACTSF02.2 PHYSICAL REVIEW LETTERS19875812 1260-1263 $@UNIV DUISBURG, FES~>~^<@Fraas, Lewis M.p=0pZMultilayer photovoltaic solar cell with semiconductor layer at shorting junction interfaceZp=0p^11.3.7x.=0p101491p=0p US4255211 p=0pUSp=0p^ 3/10/1981 p=0pAU0540344B2 AU6525280A1 CA1148639A1 DE3047431A1 DE3047431C2 ES0498204A1 ES0498204A5 ES8202987A1 FR2472841A1 FR2472841B1 GB2067012A GB2067012B ^IL0061616A0 JP56112764A2 JP63059269B4 NL0187042B NL0187042C NL8007005A US4255211p=0pYUS2919299 US3015762 US3046459 US3186873 US4015280 US4017332 US4128733 US41797^02 US4191593Yp=0pM. P. Vecchi, Integrated Tandem Solar Cells, Solar Energy, vol. 22, pp. 383-388, (1979). M. F. Lamorte et al., Analysis of AlGaAs-GaInAs Cascad^e Solar Cell Under AMO-AM5 Spectra, Solid State Electronics, vol. 22, pp. 467-473, (1979). A. B. Fowler, Cumulative Photovoltaic Device, IBM Tech. Disc. Bull., vol. 4, p. 61, (1962). L. M. Fraas et al_02.2HF PHYSICAL REVIEW LETTERSHF1979HF42HF_6HF397-401HF$QXEROX CORP, RES CTR, WEBSTER, NY, 14580 XEROX CORP, RES CTR, PALO ALTO, CA, 94304_QHF%>\\Aeron\procite databases\WCS\Articles\Brillson LJ 1979 02.pdf>HF)=Times Cited:141 Bibliography:30 Copyright 2003 SciSeaes\Monch W 1987 03..pdf;)=Times Cited:116 Bibliography:33 Copyright 2003 SciSearch Plus=+11666160^N~d83731 US4705351 US4725115 US4966439 US4997251 US61831085=n@%;\\As01mesant\Procite Databases\WCS\Patents\US04257672__.pdf;=n@' dhG02B 5/14 =n@+31=n@1020e Y?@KAISER, WJ//BELL, LDHFkDIRECT INVESTIGATION OF SUBSURFACE INTERFACE ELECTRONIC-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPYkeHF02.2HF PHYSICAL REVIEW LETTERSHF1988HF8o60eHF8o14HF8o 1406-1409 HF8o$*CALTECH, JET PROP LAB, PASADENA, CA, 91109*HF8oe%A\\As01mesant\procite databases\WCS\Articles\Kaiser WJ 1988 04.pdfAHF8o)=Times Cited:352 Bibliography:15 Copyright 2003 SciSearch Plus=eVHF8o+352HF8o66190f9Zt 16 @_t 9@_9Zt 7 @_t 9@_9Zt 772-775 @_t 9@_9Zt %7\\Aeron\Procite Databases\WCS\Articles/Efros L 19f9Zt 16 @_t 9@_9Zt 7 @_t 9@_9Zt 772-775 @_t 9@_9Zt %7\\Aeron\Procite Databases\WCS\Articles/Efros L 19f9Zt 16 @_t 9@_9Zt 7 @_t 9@_9Zt 772-775 @_t 9@_9Zt %7\\Aeron\Procite Databases\WCS\Articles/Efros L 19\N7d81 =n@FCA1113762A1 DE2963693C0 EP0013319A1 EP0013319B1 JP55090929A2 US4257672F=n@mUS3166623 US3395331 US3492058 US3666347 USd3711262 US3724383 US3779628 US3894789 US3926501 US3950075 US4156206m=n@Abram et al., The Coupling of Light-Emitting Diodes to Optical Fibers Using . . . ,J. Apdpl. Phys., (46/8), Aug. 1975, pp. 3468-3474. Cunningham, Collimated Light Source with Laser Diode and . . . Lens,IBM Tech. Discl. Bull., (19/2), Jul. 1976, pp. 625-626. Khoe et al., A Luneberg Lens fodr the Efficient Coupling of a Laser Diode . . . ,3rd Eur. Conf. Opt. Commun., Sep. 1977, pp. 176-178.=n@"5US4433898 US4435037 US4753508 US4762386 US4818053 US48d26272 US5757993 US6115168 US4464705 US4647331 US4726645 US4752109 US4781431 US4790620 US5004328 US5039192 US4653847 US4676231 US4793688 US4799756 US4762395 US4767172 US5267077 US5301249 US4355321 US43e Y?[?KAISER, WJ//BELL, LDHFkDIRECT INVESTIGATION OF SUBSURFACE INTERFACE ELECTRONIC-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPYkeHF02.2HF PHYSICAL REVIEW LETTERSHF1988HF8o60eHF8o14HF8o 1406-1409 HF8o$*CALTECH, JET PROP LAB, PASADENA, CA, 91109*HF8oe%<\\Aeron\procite databases\WCS\Articles\Kaiser WJ 1988 04.pdf<HF8o)=Times Cited:352 Bibliography:15 Copyright 2003 SciSearch Plus=HFeQ8o+352HF8o66190rticles/Efros L 19^N~ ?D,f|;@6Efros, A. L. //Efros, A. L. =qNX@7Interband Absorption of Light in a Semiconductor Sphere7=qNX@05.2.2f=qNX@ "Soviet Physics Semiconductors-Ussr"=qNX@ Article @_t 9@_9Zt 1982 @_t 9@_f9Zt 16 @_t 9@_9Zt 7 @_t 9@_9Zt 772-775 @_t 9@_9Zt %<\\As01mesant\Procite Databases\WCS\Articles/Efrosf L 1982.pdf, @_t 9@_9Zt  @_t 9@_9Zt +527 @_t 9@_9Zt 13830g[?@ WIEDER, HH HF-PERSPECTIVES ON III-V-COMPOUND MIS STRUCTURES-HF08.2HFgHF &JOURNAL OF VACUUM SCIENCE & TECHNOLOGY&HF1978HF &15HF &g4HF & 1498-1506 HF &$=USN, CTR OCEAN SYST, DIV ELECTR MAT SCI, SAN DIEGO, CA, 92152=HF &g%A\\As01mesant\procite databases\WCS\Articles\Wieder HH 1978 07.pdf,HF &HF &)=Times Cited:113 Bibliography:70 Copg{yright 2003 SciSearch Plus=HF &+113HF &66200hu[?\b?HEINE, V//JONES, ROHFFELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORSFHF01.266210X~ l,[?@$KAJIYAMA, K//MIZUSHIM*, Y//SAKATA, S$HF.SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES.HF02.2 APPlLIED PHYSICS LETTERSHF1973HFP['23HFP['8HFP['4l58-459HFP['%,\\As01mesant\Procite Databases\WCS\Articles\,)\\As01mesant\Procite Databases\WCS\Articles\Yeh CY 1992 10.pdf>_$M_hj@_jvM\\Aeron\Procite Databases\WCS\Articles\Sverdlov BN 1995 10.pdf'HFHF)=Times Cited:101 Bibliography:14 Copy^.N~2 ,D,[?@L Robertson, J HFSBand offsets of wide-band-gap oxides and implications for future electronic devicesSHF02.2 kJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: International Conference on Silicon Dielectric Interfaces (ICSDI)kHF RALEIGH, NC HF &2000HF &18HF &3HF & 1785-1791 HF &$5UNIV CAMBRIDGE, DEPT ENGN, CAMBRIDGE CB2 1PZ, ENGLAND5HF &%C\\As01mesant\Procite Databases\WCS\Articles\Robertson J 2000 05.pdfC)International Conference on Silicon Dielectric Interfaces (ICSDI); February 25-27, 2000; RALEIGH, NC Times Cited:173 Bibliography:84 Copyright 2003 SciSearch PlusHF &*mWide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge neutrality levels. This theory is reviewed and used to calculate the Schottky barrier heights and band offsets for many important high dielectric constant oxides on Pt and Si. Good agreement with experiment is found for barrier heights. The band offsets fur electrons on ,[?[?V(ROWE, JE//CHRISTMAN, SB//MARGARITONDO, G(HFRMETAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAASRHF02.2HF PHYSICAL REVIEW LETTERSHF1975HF &35ergy Res Inst/Golden//Co/80401L=8[vt>Theory ^N~ <LSi are found to be small for many key oxides such as SrTiO3 and Ta2O5 which limit their utility as Sate oxides in future silicon field effect transistors. The calculations are extended to screen other proposed oxides such as BaZrO3. ZrO2, HfO2, La2O3, Y2O3, HfSiO4, and ZrSiO4. Predictions are also given for barrier heights of the ferroelectric oxides Pb1-xZrxTiO3 and SrBi2Ta2O9 which are used in n onvolatile memories. (C) 2000 American Vacuum Society.mHF &+173HF &66380,[?@V(ROWE, JE//CHRISTMAN, SB//MARGARITONDO, G(HFRMETAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAASRHF02.2HF PHYSICAL REVIEW LETTERSHF1975HF &35HF &21HF & 1471-1475 HF &$(BELL TEL LABS INC, MURRAY HILL, NJ 07974(HF &%?\\As01mesant\Procite Databases\WCS\Articles\Rowe JE 1975 11.pdf?HF &)=Times Cited:121 Bibliography:17 Copyright 2003 SciSearch Plus=HF &M+121HF &66390l/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801 ; Solar Energy Res Inst/Golden//Co/80401L=8[vt>Theory l/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801 ; Solar Energy Res Inst/Golden//Co/80401L=8[vt>Theory O=8[vt Physical ReviewMDT|;@7;Hjalmarson, H. P. //Vogl, P. //Wolford, D. J. //Dow, J. D. ;L=8[vtUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801 ; Solar Energy Res Inst/Golden//Co/80401L=8[vt>Theory of Substitutional Deep Traps in Covalent Semiconductors>L=8[vt,01.4.3 "Deep" Localized-Wave-Function Levels,O=8[vt Physical Review LettersL=8[vt Article$M_$@_ $ 1980 Mar 24 $M_$@_ $44$M_$@_ $12$M_$@_ $810-813$M_$@_ $%E\\As01mesant\Procite Databases\WCS\Articles\Hjalmarson HP 1980 03.pdfE$M_$@_ =$+382$M_$@_ $14110292092 US 9/29/1981 DE3121350A1 DE3121350C2 FR2483686A1 FR2483686B1 GB2077038A GB2077038B HK0078486A JP04072392B4 JP57012568A2 MY0078385A US4292092mUSRE27772 US3553421 US4044222 US4064292092 US 9/29/1981 DE3121350A1 DE3121350C2 FR2483686A1 FR2483686B1 GB2077038A GB2077038B HK0078486A JP04072392B4 JP57012568A2 MY0078385A US4292092mUSRE27772 US3553421 US4044222 US406494 US4686760 US4783421 US4865999 US4937651 US4953577 US5217921 US5232549 US5246506 US5332450 US5403404 US5432015 US5484314 US5492234 US5500051 US5567249 US5593901 US5634835 US5679472 US5702565 US5708252 US6077722 US6080928 US6149988 US6155900 US6211455 US6239354 US6261856 US6280274 US6353175%6\\Aeron\Procite Databases\WCS\Patents\US046280274 US6353175%6\\Aeron\Procite Databases\WCS\Patents\US04^3cN~L,<@8Hanak, Joseph J.Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery12.3.2466175 US4292092 US 9/29/1981 DE3121350A1 DE3121350C2 FR2483686A1 FR2483686B1 GB2077038A GB2077038B HK0078486A JP04072392B4 JP57012568A2 MY0078385A US4292092mUSRE27772 US3553421 US4044222 US4064521 US4081653 US4125757 US4167015 US4181538 US4214918 US4228570 US4229232mBell;, A. E., RCA Review, 40 (1979) pp. 295-337. Carlson et al., Quartely Rept.-3, San-2219-3, 1979, pp. 69-75. Cook et al., Appl. Phys. Letts., 26 (1975) 124."US5756147 US5981864 US4356341 US4428110 US4443651 US4502225 US4507519 US4510344 US4517403 US4527006 US4532371 US4542255 US4542578 US4574160 US4581625 US4586241 US4597161 US4599154 US4603470 US4638109 US4650524 US4663494 US4686760 US4783421 US4865999 US4937651 US4953577 US5217921 US5232549 US5246506 US5332450 US5403404 US5432015 US5484314 US5492234 US5500051 US5567249 US5593901 US5634835 US5679472 US5702565 US5708252 US6077722 US6080928 US6149988 US6155900 US6211455 US6239354 US6261856 US6280274 US6353175%;\\As01mesant\Procite Databases\WCS\PatentsI\US04292092__.pdf;' H01L 21/263; B23P 23/4; B23K 9/0 +5110801994HF@9HF@11HF@ 2925-2938 HF@1994HF@9HF@11HF@ 2925-2938 HF@1994HF@9HF@11HF@ 2925-2938 HF@/=p<1100?N~,7<@LDufft, William H./=p<1Encapsulated light source with coupled fiberguide1/=p<12.2.1/=p<706518/=p< US4296998 /=p<US/=p< 10/27/1981 /=p<DE3046415A1 DE3046415C2 FR2472199A1 FR2472199B1 GB2065918A GB2065918B IT1134736A IT8026675A0 JP56094316A2 JP59032768B4 US4296998/=p<US3423594 US3774987 US3968564 US4033668 US4065203 US4101197 US4118105 US4119363 US4144541 US4167744 US4170399 US4186994 US4186996 US4192574 US4199222 US4204743/=p<~Bailey et al., Method and Apparatus to Align and Affix . . . , Xerox Discl. Journal, vol. 4, No. 3, May/Jun. 1979, pp.387-388.~/=p<"US4485290 US4495396 US4523802 US4548466 US4586608 US4623220 US4627687 US4647147 US4673244 US4679908 US4688885 US4690492 US4701013 US4702556 US4747657 US4752109 US4756592 US4762386 US4762395 US4768070 US4778241 US4779947 US4787695 US478702.2 SOLID-STATE ELECTRONICSHF1973HFP['16HFP['3HFP['381-394HFP['$4PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 085404HFP['%'\\Aeron\Procite Databases\WCS\Articles\')=Times Cited:128 Bibliography:33 Copyright 2003 SciSearch Plus=HFP['+128HFP['66410n strong demand for low -resistance, highly reliable Ohmic contacts for compound semiconductors to realize high-frequency NN~77te Databases\WCS\Articles\,)=Times Cited:128 Bibliography:33 Copyright 2003 SciSearch Plus=HFP['+128HFP['66410M<@pMurakami, M.//Koide, Y.a=0vR?X2Kyoto Univ,Dept Mat Sci & Engn,Kyoto 6068501,Japan2a=0vR?X*Ohmic Contacts for Compound Semiconductors*a=0vR?X08.3.2a=0vR?X :CRC Critical Reviews in Solid State and Materials Sciences:a=0vR?X Review$M_(*@_*Z;1998$M_(*@_*Z;23$M_(*@_*Z;1$M_(*@_*Z;1-60$M_(*@_*Z;102$M_(*@_*Z;%?\\As01mesant\Procite Databases\WCS\Articles\Murakami M 1998.pdf?$M_(*@_*Z;)pg.25, 33 missing (=0vR?X*Although there has been strong demand for low -resistance, highly reliable Ohmic contacts for compound semiconductors to realize high-frequ11.4HF #IEEE JOURNAL OF QUANTUM ELECTRONICS#HF1991HF &27HF &3HF &737-752HF &$hBELLCORE, TECH STAFF, RED BANK, NJ, 07701 UNIV ULM, DEPT ELECTR DEVICES & CIRCUITS, W-7900 ULM, GERMANY,hHF &%<\\Aeron\Procite Databases\WCS\Articles\Soole JBD 1991 03.pdf<HF)=Times Cited:129 BiSCs 7t,[?@tSOOLE, JBD//SCHUMACHER, HHFZINGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONSZHF11.4HF #IEEE JOURNAL OF QUANTUM ELECTRONICS#HF1991HF &27HF &3HF &737-752HF &$hBELLCORE, TECH STAFF, RED BANK, NJ, 07701 UNIV ULM, DEPT ELECTR DEVICES & CIRCUITS, W-7900 ULM, GERMANY,hHF &%A\\As01mesant\Procite Databases\WCS\Articles\Soole JBD 1991 03.pdfAHF)=Times Cited:129 Bibliography:70 Copyright 2003 SciSearch Plus=HF &*Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength communication systems. This paper reviews the properties of these detectors and discusses the current state-of-the-art performance achieved by experimental devices. The experimental work concentrates on the barrier-enhanced lattice-matched InAlAs-InGaAs device grown by low pressure OMCVD, which has to date yielded detectors with the highest performance characteristics. Current research on their integration with FET's to form monolithic receivers and with waveguides for on-chip optical signal processing is also included.HF &+129HF &66420,[??[?~7OIGAWA, H//FAN, JF//NANNICHI, Y//SUGAHARA, H//OSHIMA, M7HFbUNIVERSAL PASSIVATION EFFECT OF (NH4)2SX TREATMENT ON THE SURFACE OF III-V COMPOUNN~l7,[?@~7OIGAWA, H//FAN, JF//NANNICHI, Y//SUGAHARA, H//OSHIMA, M7HFbUNIVERSAL PASSIVATION EFFECT OF (NH4)2SX TREATMENT ON THE SURFACE OF III-V COMPOUND SEMICONDUCTORSbHF08.2HF 2JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS2HF1991HF &30HF &3AHF & L 322-L 325 HF &$UNIV TSUKUBA, INST MAT SCI, SAKURA, IBARAKI 305, JAPAN, NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN,HF &%,\\As01mesant\Procite Databases\WCS\Articles\,HF &)\\As01mesant\Procite Databases\WCS\Articles\Wei SH 1996 01.pdf>$M_-/@_ /nę*Using first-principles supercell calculations we find a giant (7 - 16 eV) and composition-dependent optical bowing coefficient in GaAs1-xNx, alloys. We show that both effects are due to the formation in the alloy of spatially separated and sharply localized band edge states. Our analysis suggests that in semiconductor alloys band gap variation as a function of x can be divided into two regions: (i) a bandlike region where the bowing coefficient is relatively small and nearly constant, and (ii) an impuritylike region where the bowing coefficient is relatively larger and composition dependent. For GaAs1-xNx the impuritylike behavior persists even for concentrated alloys.$M_-/@_ /nę+126$M_-/@_ /nę,Special Quasirandom Structures/ Absorption Fine-Structure/ Random Solid-Solutions/ Semiconductor Alloys/ Electronic-Structure/ Density/ Ga1-Xin Hxas/ Disorder/ States$M_-/@_ /nę61110a?a?( Wang, Shyh HF7Fundamentals of Semiconductor Theory and Device Physics7HFEnglewood Cliffs, New JerseyHF6 Prentice Hall HF61989HF666600j;[?<&Allen, S. J. //Tsui, D. C.//Vinter, B.&p_=0u"'Bell Tel Labs Inc/Murray Hill//Nj/07974'p_=0u"OABSORPTION OF INF>N~8Furuya et al., Crystallographic . . . OpticsElectronics Letter, vol. 17, No. 17 (8/20/81) pp. 582-583. Burton et al. Plasma . . . DiodesAppl. Phs. Lett., vol. 37, No. 4 (8/80) p. 411. Faust Etching . . . CompoundsCompound Semiconductors, vop=0t`"?US4397711 US4468850 US4496403 US4592791 US4613387 US4675074 US4676863 US4707219 US4725112 US4728628 US4729963 US4755858 US4758535 US4805184 US4865684 US4869780 US4897361 US4904617 US4932032 US4944838 US4980314 US4994142 US5038068 US5081002 US5081002 US5084410 US5093278 US5712188 US5731213 US6090635 US6177352 US6187515?p=0t`%;\\As01mesant\Procite Databases\WCS\Patents\US04354898__.pdf;p=0t`' H01L 21/308 p=0t`>+32p=0t`1200,[?@MONCH, WHFHMECHANISMS OF SCHOTTKY-BARRIER FORMATION IN METAL-SEMICONDUCTOR CONTACTSHHF02.2 (JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B(HF1988HF@D(6HF@D(4HF@D( 1270-1276 HF@D($UNIV DUISBURG, FESTKORPERPHYS LAB, D-4100 DUISBURG, FED REP GER, UNIV DUISBURG, SONDERFORSCH BEREICH 254, D-4100 DUISBURG, FED REP GER,HF@D(%?\\As01mesant\Procite Databases\WCS\Articles\Monch W 1988 07.pdf?)\\As01mesant\Procite Databases\WCS\Articles\Shen H 1995 08.pdf>)>Times Cited:104 Bibliography:126 Copyright 2003 SciSearch Plus>HF(*In the presence of an electric field, the dielectric constant of a semiconductor exhibits Franz-Keldysh oscillations (FKO), which can be detected by modulated reflectance. Although it could be a powerful and simple method to study the electric fields/charg Optical Bowing Coefficient in GaAsN AlloysB=sZ=sZ=sZ01.3.3 Electron Bandgaps=sZ Physical Review Letters=sZ Article$M_-/@_ /nę Jan 22, 1996 $M_-/@_ /nęF(66510 9i2e distributions in various semiconductor structures, in the past it has proven to be more complex. This is due to nonuniform fields and impurity induced broadening, which reduce the number of detectible Franz-Keldysh oscillations, and introduce uncertainties into the measurement. In 1989, a new structure, surface-undoped-doped (s-i-n(+)/s-i-p(+)) was developed, which allows the observation of a large number of FKOs and, hence, permitting accurate determination of electric fields. We present a review of the work on measuring electric fields in semiconductors with a particular emphasis on microstructures using the specialized layer sequence. We first discuss the general theory of modulation techniques dwelling on the approximations and their relevance. The case of uniform field, obtained wit h this specialized structure as well as that of the nonuniform field, are addressed. The various experimental techniques are also briefly reviewed. We then summarize the various experimental results o btained in the last few years using these special structures and FKOs and find that, even in this short period, good use has been made of the technique and the structure. This is followed by a brief r eview of the work on nonuniform fields. In this case, the work on actual device structures has significant technological implications. Important issues such as metallization and processing, the effect\\As01mesant\Proa?a?( Wang, Shyh HF7Fundamentals of Semiconductor Theory and Device Physics7HFEnglewood Cliffs, New JerseyHF6 Prentice Hall HF61989HF666600j;[?<&Allen, S. J. //Tsui, D. C.//Vinter, B.&p_=0u"'Bell Tel Labs Inc/Murray Hill//Nj/07974'p_=0u"OABSORPTION OF INF 551005e%8a=Ho2"06.4.1a=Ho2"480040a=Ho2" US4368098 a=Ho2"USa=Ho2" 1/11/1983 a=Ho2"US4368098 US4404265a=Ho2"wUS3146137 US3218205 US3417301 US3424955 US3433684 US3433686 US3462323 US3476593 US3480472 US3508962 US3674552 US3830654wa=Ho2"eHandbook of Chemistry \A Physics 42nd Ed. (1961-1962) Chem. Rubber Pub. Co. pp. 2681-2697, 2700-2710.ea=Ho2""%US4774554 US4782034 US5159413 US5164359 US5202283 US5212113 US5827365 US5888886 US4588451 US4622083 US4801557 US4830982 US4908074 US5035767 US5304247 US5306660 US5392730 US5410178 US5443033 US5462008 US4722911 US4736705 US5074954 US5128275 US5178718 US5182670 US4853078 US4891091 US5260485 US5274149 US4489128 US4509997 US4626883 US4699688 US4703<1?%Goldman, Jon C.//Rappaport, Robert E.%7Gas control system for chemical vapor deposition system706.4572150 US4369031 US 1/18/1983 7DE3233094A1 FR2512983A1 GB2108285A GB2108285B US43690317;US3396955 US3917238 US4098923 US4100310 US4138306 US4217375;"US4615909 US4619840 US4651141 US4683463 US4703718 US4726961 US4747367 US4761269 US4980204 US5106453 US5229319 US5262356 US5453124 US5468642 US5488925 US5516366 US5735961 US5851294 US5976261 US6022414 US6200389 US6210482 US6333272 US4440618 US4557950 US4891247 US4916089 US5118642 US5186756 US5441893 US5447744 US5478395 US5487783 US5546890 US5591267 US5618349 US5635242 US5853485 US5879415 US5935647 US5948300 US6217937 US6332928%6\\Aeron\Procite Databases\WCS\Patents\US04369031__.pdf6'F27B- 5/4; F27D 19/0; B05C 19/2+431240^N~,,4 US4088389 US4092659 US4143940 US4152674 US4156206 US4257671 US4286232 US4328468wP=@pXb"US4581744 US4583226 US4601535 US4616898 US4627068 US4680767 US4713822 US4726644 US4726655 US4750795 US4759596 US4763975 US4787086 US4818062 US4875215 US4892388 US4896325 US4923273 US4956549 US4986624 US5037180 US5082343 US5111519 US5132976 US5151908 US5181213 US5189714 US5231529 US5235604 US5237630 US5253099 US5257273 US5257338 US5425039 US5504762 US5526175 US5863449 US5930423 US6016371 USRE33722 US6137812 US6208783 US6222970 US6330264P=@pXb%;\\As01mesant\Procite Databases\WCS\Patents\US04358851__.pdf;P=@pXb' H01S 3/82 P=@pXb+44P=@pXb1210<@Manasevit, H.M. a=Ho2"a=Ho2"a=Ho2"(Epitaxial composite and method of making(<1?%Goldman, Jon C.//Rappaport, Robert E.%7Gas control system for chemical vapor deposition system706.4572150 US4369031 US 1/18/1983 7DE3233094A1 FR2512983A1 GB2108285A GB2108285B US43690317;US3396955 US3917238 US4098923 US4100310 US4138306 US4217375;"US4615909 US4619840 US4651141 US4683463 US4703718 US4726961 US4747367 US4761269 US4980204 US5106453 US5229319 US5262356 US5453124 US5468642 US5488925 US5516366 US5735961 US5851294 US5976261 US6022414 US6200389 US6210482 US6333272 US4440618 US4557950 US4891247 US4916089 US5118642 US5186756 US5441893 US5447744 US5478395 US5487783 US5546890 US5591267 US5618349 US5635242 US5853485 US5879415 US5935647 US5948300 US6217937 US6332928%6\\Aeron\Procite Databases\WCS\Patents\US04369031__.pdf6'F27B- 5/4; F27D 19/0; B05C 19/2+431240t4dN~ 04378255__.pdf;=o<@'H01L 21/263; H01L 33/0=o<@+41=o<@1280<@  Capasso, F. P=rHDP=rHDGraded bandgap photodetectorP=rHD11.3.2P=rHD706518P=rHD US4383269 P=rHDUSP=rHD 5/10/1983 P=rHDPDE3136528A1 FR2490876A1 FR2490876B1 GB2084797A GB2084797B JP57084186A2 US4383269PP=rHDUS3995303 US4144540P=rHDH. C. Casey \A M. B. Panish Heterostructure Lasers, Academic Press, 1978, Part A, p. 196. P. Kordos et al., Growth and Properties of Graded Band-gap Al.sub.x Ga.sub.1-x As Layers, Appl. Physics Letters, vol. 34, No. 6, (1979), pp. 366-368. W. T. Tsang, et al., Multidielectrics for GaAs MIS Devices Using Composition-Graded Al.sub.x Ga.sub.1-x As and Oxidized AlAs, Applied Physics Letters, vol. 34, No. 6, (1979), pp. 408-410.P=rHD"US4473835 US4476477 US4518979 US4525687 US4597004 US4599632 US4694318 US4701773 US4731641 US4755663 US4788579 US4829355 US4839706 US4860074 US4907042 US4974061 US5045896 US5051804 US5121181 US5138416 US5144138 US5185647 US5204284 US5298771 US5345093 US5378916 US5686734 US6350998P=rHD%;\\As01mesant\Procite Databases\WCS\Patents\US04383269__.pdf;P=rHD'#H01L 27/14; H01L 29/90; H01L 29/161#P=rHD+28&P=rHD1290=x^uqrDt4d2+D. H. Auston, Picosecond Optoelectronic Switching and Gating, Applied Physics Letters, vol. 26, No. 3, pp. 101-103 (1975). _ C. H. Lee, Picosecond Optoelectronic Switching in GaAs, Applied Physics Letters, vol. 30, No. 2, pp. 84-86, (1977). R. A. Lawton and A. Scavannee, Electron. Lett., vol. 11, No. 74, pp (1975). H. C. Casey, Jr. and E. Buehler, Evidence for Low Surface Recombination Velocity on N-Type InP, Applied Physics Letters, vol. 30, No. 5 (1977) pp. 247-249. C. W. Iseler, Properties of InP Doped with Fe, Cr, or Coin: Gallium Arsenide and Related Compounds 1978, Institute of Physics Conference Serial Number 45, Chapter 2, pp. 144-153. S. Sakai, M. Umena and Y. Amemiya, Measurement of Diffusion Coefficient and Surface Recombination Velocity for P-InAsAsP Grown InP, Japanese Journal of Applied Physics, vol. 19, No. 1, (1980) pp. 109-113. _Zp7=0o~@"?US4490709 US4494132 US4495514 US4525871 US4531143 US4577114 US4593304 US4633286 US4675624 US4695733 US4696648 US4718063 US4746620 US4751513 US4791468 US4825061 US4825081 US4831248 US4839510 US4899204 US4902636 US4916303 US4933542 US4960989 US5051789 US5055810 US5168069 US5332918 US5341017 US5408 548 US5411914 US5811841?p7=0o~@%;\\As01mesant\Procite Databases\WCS\Patents\US04376285__.pdf;p7=0o~@'/H01L 27/12; H01L 27/48; H01L 29/8.1=o<@599595=o<@ US4378255 =o<@US=o<@ 3/29/1983 =o<@-EP0077825A1 EP0077825B1 US4378255 WO8203946A1-=o<@US3485685 US3626257 US3626328 US3649837 US3780358 US3861969 US38682814734 US5703894 US6118803=o<@%6\\Aeron\Procite Databases\WCS\Patents\US04378^N~ n161; H01L 27/14/p7=0o~@+32p7=0o~@1270<@"Holonyak, Jr.//Nick//Laidig, W. D."=o<@;Method for producing integrated semiconductor light emitter;=o<@08.1=o<@599595=o<@ US4378255 =o<@US=o<@ 3/29/1983 =o<@-EP0077825A1 EP0077825B1 US4378255 WO8203946A1-=o<@US3485685 US3626257 US3626328 US3649837 US3780358 US3861969 US3868281 US3961996 US3982207 US3996492 US4001055 US4003632 US4011113 US4037241 US4063269 US4099999 US4124826 US4138274 US4163238 US4165474 US4166278 US4183038 US4261771=o<@6Tsukada, T., Jour. Appl. Phys., 45, (1974), 4899-4906.6=o<@"US4536940 US4539743 US4817103 US4824798 US4847217 US4870652 US4871690 US4980313 US4980893 US5031185 US5183779 US5327448 US5353295 US5403775 US5550081 US5581571 US5705827 USRE33274 US4630083 US4639275 US6091755 US6118802 US4727556 US4727557 US4771010 US4797891 US4830983 US4843032 US4654090 US4654960 US4671830 US4716125 US4731789 US4752933 US4594603 US4599791 US5424242 US5425043 US5614734 US5703894 US6118803=o<@%;\\As01mesant\Procite Databases\WCS\Patents\USP=rHD706518P=rHD US4383269 P=rHDUSP=rHD 5/10/1983 P=rHDPDE3136528A1 FR2490876A1 FR2490876B1 GB2084797A GB2084797B JP57084186A2 US4383269PP=rHDUS3995303 US4144540P=r12904d$T+P=rHD1290<@#Barry, James D.//Einhorn, Arthur J.#@=x^uqвLaser pumping system@=x^uqв12.5.3=x^uqв260265@=x^uqв US4383318 @=x^uqвUS@=x^uqв 5/10/1983 @=x^uqв US4383318 @=x^uqв US3471215 @=x^uqвVOptical Pumping Systemby; Hardy, IBM Tech. Disclosure Bull., vol. 6, No. 8, Jan. 1964.V@=x^uqв"qUS4515431 US4554510 US4560234 US4653056 US4665529 US4674830 US4701929 US4723257 US4723824 US4731795 US4756003 US4780877 US4785459 US4859016 US4872177 US4890289 US5048027 US5058980 US5074861 US5077817 US5181223 US5241414 US5268978 US5299222 US5355387 US5420876 US5440574 US5450429 US5479431 US5511085 US5521932 US5663979 US5940425 US5982789 US6141143 US6144484 US6307995q@=x^uqв%;\\As01mesant\Procite Databases\WCS\Patents\US04383318__.pdf;@=x^uqв'H01S 3/9@=x^uq<в+37@=x^uqв1300ysics, vol. 45, No. 11, Nov. 1974, pp. 4997-4999. U.S. Ser. No. 106,762; filed 12/26/79; Stowe et al. U.S. Ser. No. 106,763; filed 12/26/79; Stowe et al."US4536058 US4589725 US4618258 US4626652 ysics, vol. 45, No. 11, Nov. 1974, pp. 4997-4999. U.S. Ser. No. 106,762; filed 12/26/79; Stowe et al. U.S. Ser. No. 106,763; filed 12/26/79; Stowe et al."US4536058 US4589725 US4618258 US4626652 ysics, vol. 45, No. 11, Nov. 1974, pp. 4997-4999. U.S. Ser. 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No. 106,763; filed 12/26/79; Stowe et al."US4536058 US4589725 US4618258 US4626652 US4664732 US4669814 US4697876 US4707201 US4733930 US4737007 US4762416 US4778237 US4822123 US4869567 US5042980 US5091983 US5619600 US5670765 US6301426 US6303695 US6335998 US6350261 US4453802 US4533208 US4632513 US4636028 US4679907 US4688882 US4717230 US4725137 US4728169 US4730171 US4738511 US4761832 US4784452 US4815817 US4895423 US4915473 US5106181 US5207669 USRE33296 US6126655 US6129723 US6268435`%;\\As01mesant\Procite Databases\WCS\Patents\US04387954__.pdf;' G02B 5/14 +441310az,Inst Theoret Phys/a-8036 Graz//Austria.=X@tx SA Semi-Empirical Tight-Binding Theory of the Electronic-Structure of SemiconductorsS.=X@tx az,Inst Theoret Phys/a-8036 Graz//Austria.=X@tx SA Semi-Empirical Tight-Binding Theory of the Electronic-Structure of SemiconductorsS.=X@tx d atmosphere annealing for III-V semiconductor device fabricationc08.1.3260265 US4396437 US8/2/1983 US4396437 1US3984263 US4058413 US4312681 US4327475 US43571801Kasahara et al., J. 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Donnelly et al., Solid State Electronics, 20, (1977), 273."(US4469528 US4473939 US4489480 US4505023 US4519127 US4540446 US4558509 US4561171 US4601095 US4634474 US4636822 US4642879 US4711858 US4771324 US4772489 US4782032 US4795717 US4803527 US4830987 US4847212 US4863877 US4900591 US4956308 US5001076 US5162242 US5229323 US5294557 US5312765 US5565696 USH390(%;\\As01mesant\Procite Databases\WCS\Patents\US04396437__.pdf;'H01L 21/265; H01L 21/324+301320\\As01mesant\Procite Databases\WCS\Articles/Haug H 1989 02.pdf>=w<J+110:$M_CE@_E^: 19700<@Liau, Z. L.//Walpole, James N.h5=oI)GaInAsP/InP Double-heterostructure lasers)h5=oI10.3.2h5=oI357270h5=oI US4468850 h5=oIUSh5=oI9/4/1984h5=oI US4468850 h5=oIEUS3359143 US3716405 US3982261 US4276098 US4287485 US4354898 US4372791Eh5=oIHeterostructu<1?2Odani, Kouichiro//Mimura, Takashi//Hikosaka, Kohki2Method for fabricating a gallium arsenide semiconductor device>09.1.2280070 US4558509 US 12/17/1985 FDE3579379C0 EP0166342A2 EP0166342A3 EP0166342B1 JP61018181A2 US4558509F;US4193182 US4265934 US4298403 US4325747 US4330343 US4396437;Yokoyama et al., Appl. Phys. Letts. 42, (Feb. 1983), 270. McLaughlin et al., Appl. Phys. Letts. 47.510950 US4561916 JP JP 12/31/1985 JP60012724A2 US4561916OUS3454SCst8<@%Akiyama, Masahiro//Akiyama, Yoshihiro%*Method of growth of compound semiconductor*07.510950 US4561916 JP JP 12/31/1985 JP60012724A2 US4561916OUS3454434 US3473978 US3941647 US3963538 US3963539 US3985590 US4120706 US4174422OgBischoff et al., Selective Growth of GaAsI.B.M. Tech. Discl. Bull., vol. 16, No. 9, Feb. 1974, p. 3072.g"US4717597 US4746626 US4900372 US4908074 US4994867 US5019529 US4757030 US4774205 US4808551 US4825269 US4885052 US4890895 US4963508 US4989934 US5198269 US5208182 US6010937 US4848273 US4855249 US4928154 US4935385 US5238869 US5391515 US5659188 US5744375 US4891091 US4897699 US5021119 US5037674 US5141894 US5183776 US5453153 US5463254 US5141569 US5141893 US4699688 US4710478 US4789421 US4798743 US4826784 US4835116 US5053835 US5081062%;\\As01mesant\Procite Databases\WCS\Patents\US04561916__.pdf;'H01L 21/20; H01L 21/324+431800a?a?<Kressel, H.//Butler, J.K.HF,Semiconductor Lasers and Heterojunction LEDs,HFNew YorkHFqAcademic PressHFq1977HFq66620xb?b?FHEINE, VHFTHEORY OF SURFACE STATESHF02.2HF PHYSICAL REVIEW6AHFe1689-&HFe%:\\Aeron\Procite Databases\WCS\Articles\Heine V 1965 06.pdf'HFeHFe)=Times Cited:656 Bibliography:38 Copyright 2003 SciSearch Plus=HFe+656HFe66630Q=Hool. Phys. 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P. >x@=Hu/̬7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987x@=Hu/̬/Atom-Selective Imaging of the GaAs(110) Surface/x@=Hu/̬06.2.2x@=Hu/̬ Physical Review Lettersx@=Hu/̬ Article$M_T@_|/| 1987 MAR 23 $M_T@_|/|58$M_T@_|/|12$M_T@_|/| 1192-1195 $M_T@_|/|%C\\As01mesant\Procite Databases\WCS\Articles\Feenstra RM 1987 03.pdfC7=Hu/̬+376&$M_T@_|/|14820<@!Sheldon, Peter//Hayes, Russell E.!UProcess for selectively patterning epitaxial film growth on a semiconductor substrateU06.5597195 US4614564 US 9/30/1986 JP61135115A2 US4614564US4111725 US4370510 US4426767"US4925810 US4980312 US5453398 US5498567 US5561339 US5583393 US5705432 US5828288 US5084409 US5126287 US5587623 US5619097 US5844351 US5886460 US5514619 US5529524 US5629583 US5656530 US5903098 US5903243 US4677737 US4687541 US5192701 US5290726 US5534743 US5548181 US5663608 US5688158%;\\As01mesant\Procite Databases\WCS\Patents\US04614Q564__.pdf;'0C03B 23/0; H01L 21/205; H01L 21/365; H01L 21/3060+282010\\Aeron\Procite Databases\WCS\Articles\Feenstra RM 1987 03.pdf>7=Hu/̬+376$M_T!@_|/|148207 03.pdf>7=Hu/̬+376$M_T^N~471067 US5477377 US5128728 US5132763 US6040587 US6123062 US5747862 US5768303 US4711857 US4712121 US4825264 US4841533 US4968642 US5031007 US5196958 US5313073?8=Ho2%;\\As01mesant\Procite Databases\WCS\Patents\US04616241__.pdf;8=Ho2'H01L 33/0; H01S 3/198=Ho2+328=Ho22030b?ʖb?ZCOWLEY, AM//SZE, SMHF@SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS@HF02.2HF JOURNAL OF APPLIED PHYSICSHF1965HF@36HF@10HF@3212-&HF@)=Times Cited:510 Bibliography:34 Copyright 2003 SciSearch Plus=HF@+5101HF@66650g during multistage epitaxial growthm=.q8"07.5=.q8"357270=.q8" US4632712 g during multistage epitaxial growthm=.q8"07.5=.q8"357270=.q8" US4632712 ?o6fh<@HEales, Brian A.//Bricheno, Terry//Leggett, Norman D.//Ashton, John E. U.H==pRInjection laser packages==pR12.2.1(C=pR282100==pR US4615031 ==pRUS==pR 9/30/1986 ==pRCEP0100086A2 GB2124402A GB2124402B GB8317959A JP59031919A2 US4615031C==pRUS3449173 US4351051 US4399541==pRR. Simmons et al, Electrical-to-Optical Contact Modification, IBM Technical Disclosure Bulletin, vol. 17, No. 8, Jan. 1975, p. 2372.==pR"!US4838639 US4854659 US5325456 US5469456 US4803689 US4826276 US5852696 US6048105 US4874217 US4936646 US5282258 US5293441 US4708429 US4714315 US5111476 US5177806 USRE37416 US4788406 US4788627 US5222170 US5243673 US5745623 US5780927 US4744626 US4779788 US4989930 US5038198 US5537502 US5706302!==pR%;\\As01mesant\Procite Databases\WCS\Patents\US04615031__.pdf;==pR' H01S 3/45 ==pR+29==pR2020o2 8=Ho2Superlattice optical device8=Ho204.38=Ho25971958=Ho2 US4616241 8=Ho2US8=Ho2 10/7/1986 8=Ho2 US4616241 8=Ho2US4319259 US4365260 2030q^N~<@>Gourley, Paul L.//Osbourn, G. C.//Biefeld, R. M.//Fritz, I. 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P.//Wilbur D.//Long, Judith A.'=slVSemiconductor devices employing Fe-doped MOCVD InP-based layer for current confinementV=sl06.5=sl706518=sl US4660208 =slUS=sl 4/21/1987 =slsCA1262768A1 DE3579130C0 EP0185051A1 EP0185051B1 JP02017944B4 JP61502434T2 US4660208 US4888624 US4999315 WO8600172A1s=sl US4193335 =slChanneled Substrate Buried Heterostructure InGaAsP/InP Laser Employing a Buried Fe Ion Implant for Current ConfiS4286275 US4348686 US43969311fHeiblum, Solid State Electronics, 24, 343, (1981). Ishiwara, et al, Appl. Phys. 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A.//Frazier, Gary A.//Frensley, William R.3=HoSpatial light modulator=Ho11.4.1=Ho570160=Ho US4705361 =HoUS=Ho 11/10/1987 =Ho#JP02618870B2 JP63011909A2 US4705361#=Ho US4525687 =Ho"US4947223 US4958203 US5047822 US5091756 US5126836 US5150205 US5572029 US5572059 US5653851 US5654580 US5023944 US5027178 US5157538 US5159225 US5746930 US5792377 US5105248 US5119227 US5245369 US5260798 US5486698 US5512748 US5604977 US5626773 US5796514 US5852516 US5175465 US5175739 US5602043 US5603848 US5424544 US5426303 US6018414 US6151170 US5532484 US5559332 US6249374 US5644838 US5647946 US4840446 US4861130 US4872744 US5457318 US5478242 US5574282 US5578826 US5708269 US5743006=Ho%;\\As01mesant\Procite Databases\WCS\Patents\US04705361__.pdf;=Ho' G02F 1/15 X=Ho+48=Ho2260 11/24/1987 _=8zutвUS4708494 US5004913 US5090818 US5096277 US5222810 US5302025 US5332316 US5363463 US5485480 US5499313 US5560712 US5696863 US5820265 US5928222 US59 11/24/1987 _=8zutвUS4708494 US5004913 US5090818 US5096277 US5222810 US5302025 US5332316 US5363463 US5485480 US5499313 US5560712 US5696863 US5820265 US5928222 US59 11/24/1987 _=8zutвUS4708494 US5004913 US5090818 US5096277 US5222810 US5302025 US5332316 US5363463 US5485480 US5499313 US5560712 US5696863 US5820265 US5928222 US59NN~8<@Kleinerman, Marcos_=8zutвYMethods and devices for the optical measurement of temperature with luminescent materialsY_=8zutв12.3.3_=8zutв0_=8zutв US4708494 _=8zutвUS_=8zutв 11/24/1987 _=8zutвUS4708494 US5004913 US5090818 US5096277 US5222810 US5302025 US5332316 US5363463 US5485480 US5499313 US5560712 US5696863 US5820265 US5928222 US5963680_=8zutвUS3239406 US3639765 US3996472 US4061578 US4075493 US4136566 US4215275 US4223226 US4245507 US4262198 US4278349 US4281245 US4302970 US4307607 US4313057 US4356448 US4374328 US4376890 US4409476 US4437772 US4448547_=8zutвIntroduction to Solid State Physics by Charles Kittel, Nov. 1957, pp. 495, 496, 516, 517, 524. 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Okamoto et al., Feb. 21, 1974, An Early Patent Application (Japanese Translated), No. 51452/72, pp. 3-8._=8zutв"]US4826288 US4859079 US5090818 US5107445 US5141331 US5211480 US5255980 US5290103 US5351268 US5363463 US5600147 US5606170 US5043585 US5084617 US5118405 US5140609 US5826984 US583<j=?Branom, David E.!Clothing with illuminated display!12.4.2361920 US4709307 US 11/24/1987  US4709307 YUS2120259 US2557383 US3549878 US3561394 US36380117095 US4953066 US4962602 US5249106 US5^N~,83715600C2 DE3745125C2 DE3745127C2 FR2598863A1 GB2190784A GB2190784B GB8711148A JP02660336B2 JP62274788A2 US4665529 US4723257 USRE34192OUS3982201 US4035742 US4272733 US4383318 US4553238 US4653056 US4656635 US4665529OFarmer et al., Solid State Pumping Source for Nd:YAG Lasers with Integrated Focusing Optics, IBM Tech. Discl. Bull., vol. 15, No. 1, Jun.'72. Chinn, Intracavity Second-Harmonic Generation in NdPentaphosphate Laser, Appl. Phys. Lett., vol. 29, (1976) p. 176. Culshaw et al., Eff. Freq.-Doubl. 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Entwickl.-Ber.Bd. 9 (1980) No. 3.D"US4914305 US4954705 US5001349 US5023458 US5529524 US5534743 US5844351 US5864142 US4980558 US4980567 US5262341 US5309890 US5828288 US5834783 US5049460 US5126287 US5583393 US5587623 US5905267 US5929454 US5369282 US5379749 US5886460 US5892231 US6323499 US6335783 US5629583 US5688158 US6014200 US6166387 US5973332 US5981954 US4853545 US4902898 US49943^N~|,$Ӗb?@xFLORES, F//TEJEDOR, CHF,ON THE FORMATION OF SEMICONDUCTOR INTERFACES,HF02.2HF (JOURNAL OF PHYSICS C-SOLID STATE PHYSICS(HF1987HF20HF2HF145-175HF$DUNIV AUTONOMA MADRID, DEPT FIS ESTADO SOLIDO, E-28049 MADRID, SPAIN,DHF%=\\As01mesant\Procite Databases\WCS\Articles\Flores F 1986.pdf=HF)>Times Cited:136 Bibliography:123 Copyright 2003 SciSearch Plus>HF=+136HF66680<@ #Baer, Thomas M.//Keirstead, Mark S.#ALaser diode pumped solid state laser with miniaturized laser headA12.5.3535650 US4723257 US2/2/1988DE3715600A1 DE191440B1 JP61187334A2 US4724328FOUS4130761 US4153843 US4200794 US4409487 US4430570 US4472636 US4498952 US4633090ODIEEE Transactions on Electron Devices, vol. 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Entwickl.-Ber.Bd. 9 (1980) No. 3.D"US4914305 US4954705 US5001349 US5023458 US5529524 US5534743 US5844351 US5864142 US4980558 US4980567 US5262341 US5309890 US5828288 US5834783 US5049460 US5126287 US5583393 US5587623 US5905267 US5929454 US5369282 US5379749 US5886460 US5892231 US6323499 US6335783 US5629583 US5688158 US6014200 US6166387 US5973332 US5981954 US4853545 US4902898 US49943US5981954 US4853545 US4902898 US499433cN~8D\As01mesant\Procite Databases\WCS\Patents\US04731795__.pdf;(C=t2}в'H01S 3/8(C=t2}в+41(C=t2}в2370<@L !Shibagaki, Taro//Kinoshita, Osamu!<=ngKApparatus for stabilizing the optical output power of a semiconductor laserK<=ng12.2.3@=ng581270<=ng US4733398 <=ngJP<=ng 3/22/1988 <=ngSDE3684079C0 EP0218449A2 EP0218449A3 EP0218449B1 JP03037871B4 JP62172779A2 US4733398S<=ng'US4450564 US4631728 US4689795 US4692606'<=ng"US5379145 US5384800 US4827481 US4845720 US4924473 US4937441 US5025447 US5026978 US5157675 US5260955 US5473461 US5498993 US6185233 US4849980 US4876442 US4958926 US4965444 US5043992 US5067117 US5264692 US5268917 US5530712 US5579328 US4884280 US4903273 US5068863 US5123024 US5321710 US5345167 US6006172 US6011768 US4982407 US5012475};u=?:2Zinkeallmang, M. //Feldman, L. C. //Grabow, M. H. 2X=qQUniv Western Ontario,Dept Phys/London N6a ; at&T Bell Labs/Murray Hill//Nj/07974QX=qClustering on SurfacesX=q07.5.1X=q Surface Science ReportsX=q Review@_<,@_$<1992@_<,@_$<16@_<,@_$<8@_<,@_$<j*ZxDLIn this review we summarize the current theoretical and experimental understanding of clustering phenomena on surfaces, with an emphasis on dynamical properties. The basic theoretical concepts to predict evolving cluster size distributions are presented, with extensions to less restrictive assumptions, such as including the influence of non-zero deposition rates. The discussion of experimental results to test these concepts is preceded by a brief introduction of the experimental techniques used in morphological cluster studies. Finally, two important physical surface quantities, surface diffusion coefficients and adatom binding energies, are used to demonstrate the impact of clustering in their understanding.@_<,@_$<+205@_<,@_$<,Scanning Tunneling Microscopy/ Significant Mutual Arsenic-Terminated Si(111)/ Particle Diffusion Problem/ Supported Metal-Catalysts/ Single-Crystal Surfaces/ Thin Condensation/ Ripening Growth T-Rate/ Epitaxial-Growth/ Fraction@_<,@_$<150804661203=XlqgHot Jet Etching of GaAs and Si, M. W. Geis et al., distributed at Electronic Photon and Ion Beam Conference, Jun. 1985. Coburn et al., Directional E4661203=XlqgHot Jet Etching of GaAs and Si, M. W. Geis et al., distributed at Electronic Photon and Ion Beam Conference, Jun. 1985. Coburn et al., Directional E4661203=XlqgHot Jet Etching of GaAs and Si, M. W. Geis et al., distributed at Electronic Photon and Ion Beam Conference, Jun. 1985. Coburn et al., Directional E4661203=XlqgHot Jet Etching of GaAs and Si, M. W. Geis et al., distributed at Electronic Photon and Ion Beam Conference, Jun. 1985. Coburn et al., Directional EJzN~K4< US5303251 US5313482 US5621205 US5754577 US5140603 US5153765 US5812582 US5953690<=ng%;\\As01mesant\Procite Databases\WCS\Patents\US04733398__.pdf;<=ng' H01S 3/13 <=ng+41<=ng2380};@:2Zinkeallmang, M. //Feldman, L. C. //Grabow, M. H. 2X=qQUniv Western Ontario,Dept Phys/London N6a ; at&T Bell Labs/Murray Hill//Nj/07974QX=qClustering on SurfacesX=q07.5.1X=q Surface Science ReportsX=q Review@_<,@_$<1992@_<,@_$<16@_<,@_$<8@_<,@_$<377-463@_<,@_$<%B\\As01mesant\Procite Databases\WCS\Articles/ZinkeAllmag M 1992.pdf,@_<,@_$<@_<,@_$<*In this review we summarize the current theoretical and experimental understanding of clustering phenomena on surfaces, with an emphasis on dynamical properties. The basic theoretical concepts to pre<Ԯ1?V )Pang, Stella W.//Geis, M. W.//Efremow, N.=Xlq=Xlq=Xlq:Dry etching patterning of electrical and optical materials:=Xlq08.2=Xlq357270=Xlq US4734152 =XlqUS=Xlq 3/29/1988 =Xlq US4734152 =XlqUS4233109 US4522674 USGw7g<8<@V )Pang, Stella W.//Geis, M. W.//Efremow, N.=Xlq=Xlq=Xlq:Dry etching patterning of electrical and optical materials:=Xlq08.2=Xlq357270=Xlq US4734152 =XlqUS=Xlq 3/29/1988 =Xlq US4734152 =XlqUS4233109 US4522674 US4661203=XlqgHot Jet Etching of GaAs and Si, M. W. Geis et al., distributed at Electronic Photon and Ion Beam Conference, Jun. 1985. Coburn et al., Directional Etching with XeF.sub.2 and Other Active Gases, IBM Tech. Discl. Bulletin, vol. 22, No. 4, Sep. 1979, p. 1640. Geis et al., Hot Jet Etching of GaAs and Si; J. Vac. Sci. Technol. B4(1), Jan./Feb. 1986, pp. 315-317.g=Xlq"+US5089746 US5091048 US5286344 US5298112 US5597495 US5868952 US6129039 US6132798 US5110407 US5110410 US5399230 US5462635 US6030857 US6096163 US53<=?t (Montroll, Andrew H.//Macomber, Steven H.(4Monolithic semiconductor laser and optical amplifier410.5.5435350 US4744089 US 5/10/1988  US4744089  US4573158 sBurnham et; al, Large Collimated Output Beams; Xerox Disclosure Journal, vol. 4, No. 3; May/Jun. 1979, pp. 363-364.s"IUS5260822 US5321718 US5696779 US5715268 US6148014 US6181721 US5084897 US5088105 US6141365 US6148013 US5175643 US5185756 US5200968 US5228049 US5555544 US5592503 US6307873 US5349602 US5400353 US5864574 US5914978 US5602866 US5657339 USRE37051 US6272162 USRE35215 US6122299 UU^N~ 8\<@~ Kwok, Siang P.RMethod of making a self-aligned MESFET using a substitutional gate with side wallsR09.1.2204095 US4745082 US 5/17/1988 BCA1276315A1 DE3790294T GB2199445A GB2199445B US4745082 WO8707765A1BOUS4334349 US4351099 US4503599 US4505023 US4532004 US4546540 US4561169 US4569119OYamasaki et al., GaAs LSI-Directed MESFET's with Self-Aligned . . . , IEEE Trans. on Elect. Devices, vol. 29, No. 11, Nov. 1982, pp. 1772-1777."?US4863879 US4889831 US5374575 US5447874 US6030453 US6033963 US6225176 US6248637 US6300203 US6333244 US4902646 US4962054 US6051486 US6057219 US6265291 US6265293 US5504039 US5733806 US6271095 US6271132 US6184097 US6194748 US4843024 US4859618 US5093280 US5374574 US5985726 US5994179 US6200869 US6225173 US6291278 US6297115?%;\\As01mesant\Procite Databases\WCS\Patents\US04745082__.pdf;'$H01L 21/306; H01L 21/265; H01L 21/24$+322430<@ Sollner, T. C. L. GerhardTunneling transfer devices04.1357270 US4745452 US 5/17/1988  US4745452 'US3982207 US4208667 US4348686 US4525731'Anderson, E., Modern Physics and Quantum Mechanics, W. B. Saunders Co., Philadelphia, 1971, pp. 174-176. Price, Peter J. Physics of Heterostructures and Heterostructure DevicesIBM Research Report, 4/19/83. A Field-Effect Transistor with a Negative"!US4942442 US4995049 US5107316 US5130766 US5283688 US5285068 US5003360 US5047822 US5194983 US5223704 US5298771 US5317897 US5138408 US5160993 US5228777 US5281542 US5965899 US5355000 US5731596 US5869844 US5937118 US4816878 US4868612 US5051786 US5086327 US5185647 US5191784 US5321275 US5326995!%;\\As01mesant\Procite Databases\WCS\Patents\US04745452__.pd<ě=? QTerui, Hiroshi//Yasu, Mitsuho//Kobayashi, Morio//Kawachi, Masao//Yamada, YasufumiQ!Hybrid optical integrated circuit!10.5.6403735 US4750799 JP 6/14/1988 IyN~Td#f;' H01L 27/14 +292450<@ QTerui, Hiroshi//Yasu, Mitsuho//Kobayashi, Morio//Kawachi, Masao//Yamada, YasufumiQ!Hybrid optical integrated circuit!10.5.6403735 US4750799 JP 6/14/1988 CA1255382A1 DE3575208C0 EP0171615A2 EP0171615A3 EP0171615B1 JP02030485B4 JP05003748B4 JP61046911A2 JP61087113A2 JP61117513A2 JP61133911A2 JP61242069A2 JP63025644B4 US4735677 US4750799YUS3386787 US3542536 US3806223 US3873339 US3934061 US4169009 US4326771 US4360246 US4547262YTaper Coupling between 7059-Glass and Cds Films and Phase Modulation in the Composite Waveguide Structureby Applied Physics Letters, vol. 28, No. 3, 1 Feb. 1976. Gallium arsenide laser-array-on-silicon package; J. D. Crow et al., Applied Optics, vo"US4911512 US4921316 US5023881 US5057022 US5121457 US5135605 US5179601 US5179609 US5194105 US5235661 US5359687 US5400419 US5493437 US5555331 US5684902 US5708741 US5894538 US5898806 US6343171 US5579423 US5600745 US5960259 US5966478 US4876446 US4890895 US4896936 US4901329 US4927781 US4945400 US4974928 US4989934 US5071223 US5077878 US5163108 US5177352 US5182782 US5182787 US5268066 US5281303 US5415730 US5475775 US5572615 US5574806 US5835650 US5883996 US5907646 US5943459 US6067393 US6069904 US6090635 US6259841 US6266472 US6298075%;\\As01mesant\Procite Databases\WCS\Patents\US04750799__.pdf;'G02B 6/12; G02B 6/10+53246012.2.2P=PpU28145`=PpU US4752109 `=PpUUS`=PpU12.2.2P=PpU28145`=PpU US4752109 `=PpUUS`=PpUahren zur automatischen MpIy 9\8<@ 8Gordon, Eugene I.//Nielsen, Robert J.//Stafford, John W.8`=PpU1Optoelectronics package for a semiconductor laser1`=PpU12.2.2P=PpU28145`=PpU US4752109 `=PpUUS`=PpU 6/21/1988 `=PpU!EP0259018A1 EP0259018B1 US4752109!`=PpU5US2908209 US3671108 US3813169 US3840889 US3894789 US3938895 US3954338 US4003074 US4060309 US4166668 US4168883 US4199222 US4257672 US4281891 US4296998 US4307934 US4307951 US4316204 US4357072 US4385797 US4403243 US4447119 US4474469 US4475788 US4612671 US4627687 US4636030 US4640585 US4653847 US4665529 US46872905`=PpUNTZ vol. 38, No. 5, May 1986, pp. 318-320, 322, 323, Berlin, DE., A. Kuke et al., Verfahren zur automatischen Montage und Justierung optischer Bausteine. Patent Abstracts of Japan, vol. 9, No. 20 (P-330), Jan. 26, 1985, JP-A-59 (Nippon Denshin Denwa Kosha) 20-09-1984. Patent Abstracts of Japan, vol. 9, No. 126 (E-318), May 31, 1985; \A JP-A-60 12786 (Hitachi Seisakusho K.K.) 23-01-1985.`=PpU"US4865410 US4911519 US4927228 US4930857 US4953171 US4957342 US4997243 US5011256 US5029968 US5047835 US5111522 US5113466 US6088501 US6130444 US6181855 US6243508 US4846564 US4854659 US4945524 US4946246 US4979791 US4989930 US5024504 US5026138 US5068865 US5099487 US5123066 US51557<ě=? Mahlein, Hans F.WIntegrated optical multiplex-demultiplex module for optical communications transmissionW10.5.6512710 US4760569 DE 7/26/1988 9DE3687162Cnications transmissionW10.5.6512710 US4760569 DE 7/26/1988 9DE3687162C^N~8t<@ Mahlein, Hans F.WIntegrated optical multiplex-demultiplex module for optical communications transmissionW10.5.6512710 US4760569 DE 7/26/1988 9DE3687162C0 EP0226868A2 EP0226868A3 EP0226868B1 US47605699 US4640574 9Unger, Planar and Integrated Multi-and Demultiplexers, Proceedings of the Sixth European Conference on Circuit Theory and Design, Sep. 6-8, 1983, VDE-Verlag GmbH, Berlin, pp. 387-389. Flanders et al., Grating Filters for Thin-Film Optical Waveguides, Applied Physics Letters, vol. 24, No. 4, 15 Feb. 1974, pp. 194-196. Tamir, 3. Beam and Waveguide Couplers, Integrated Optics, Springer-Verlag Berlin, Heidelberg, New York, 1975, pp. 83-135. Flugge, Encyclopedia of Physics, vol. XXIX, Optical Instruments, Springer-Verlag, Berlin-Heidelberg-New York, 1967, pp. 564-610.9"SUS4904036 US4911512 US5037765 US5048913 US6236780 US6243513 US5355237 US5500910 US6324329 US6343169 US5131060 US5134671 US5555127 US5771254 US6289155 US6298182 US5193131 US5206920 US6011885 US6137933 US4860294 US4887255 US4911516 US4916497 US4969712 US4989935 US5070596 US5127081 US5245404 US5303316 US5809050 US6011884 US6263135 US6271970S%;\\As01mesantpg=0Iu`~в535540p=0Iu`~в US4763975 p=0Iu`~вUSp=0Iu`~в 8/16/1988 p=0Iu`~в'US4763975 US4818062 US4820010 USRE33722'p=0Iu`~вcUS3982201 US4358851 US4370021 US4521070 US4553238 US4575854 US4653056 US4680767 US4681396 US4708426cp=0Iu`~вsChesler et al., Appl. Phys. Lett., vol. 23, No. 5, Sep. 1, 1973, pp. 235-236, Miniature Diode-Pumped Nd:YAG Lasers.sp=0Iu` pp. 235-236, Miniature Diode-Pumped Nd:YAG Lasers.sp=0Iu`^N~l|O\Procite Databases\WCS\Patents\US04760569__.pdf;'H04B 9/0+342480<@ &Scifres, Donald R.//Worland, D. Philip&p=0Iu`~в'Optical system with bright light output'p=0Iu`~в12.5.3pg=0Iu`~в535540p=0Iu`~в US4763975 p=0Iu`~вUSp=0Iu`~в 8/16/1988 p=0Iu`~в'US4763975 US4818062 US4820010 USRE33722'p=0Iu`~вcUS3982201 US4358851 US4370021 US4521070 US4553238 US4575854 US4653056 US4680767 US4681396 US4708426cp=0Iu`~вsChesler et al., Appl. Phys. Lett., vol. 23, No. 5, Sep. 1, 1973, pp. 235-236, Miniature Diode-Pumped Nd:YAG Lasers.sp=0Iu`~в"IUS4913507 US5018152 US5168401 US5185758 US5319528 US5323414 US5590141 US5592333 US5022043 US5048911 US5212710 US5260963 US5418880 US5455879 US5646674 US5859868 US5058980 US5109447 US5463534 US5533163 US5887096 US6109767 US5311540 US5317447 US6224216 US6327291 US6331692 US4818062 US4820010 US5351323 US5394492 US5625403 US5633967Ip=0Iu`~в%;\\As01mesant\Procite Databases\WCS\Patents\US04763975__.pdf;p=0Iu`~в' G02B 6/26 p=0Iu`~в+33p=0Iu`~в2490296688A2 US4764930FUS4053845 USB US4161436 US4205278 US4503854 US4517980 US4561436 US4601288 US4612641 US4622967 US4638800 US4665913 US4669466 US4685107 US4704583FM-Laser Operation for the 296688A2 US4764930FUS4053845 USB US4161436 US4205278 US4503854 US4517980 US4561436 US4601288 US4612641 US4622967 US4638800 US4665913 US4669466 US4685107 US4704583FM-Laser Operation for the ts\US04764930__.pdf6' H01S 3/10 +352510 Eu5emt8<@ !Bille, Josef F.//Brown, Stuart I.!Multiwavelength laser source10.5.5278375 US4764930 US 8/16/1988 FAU0601136B2 AU2661688A1 CA1291254A1 EP0325832A1 JP01296688A2 US4764930FUS4053845 USB US4161436 US4205278 US4503854 US4517980 US4561436 US4601288 US4612641 US4622967 US4638800 US4665913 US4669466 US4685107 US4704583FM-Laser Operation for the Nd:YAG Laser,by Kuizenga et al., IEEE Journal of Quantum Electronics, Nov. 1970. 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Defects in the Optical Synthesis,publication and date unknown."]US5009658 US5067951 US5246435 US5439462 US5656186 US5757839 US6007202 US6010497 US6271915 US6299311 US5134621 US5182759 US5789876 US5904678 US6193373 US6199986 US6341009 US5453871 US5521930 US6334683 USRE37504 US6095651 US6132424 US6210169 US6210401 US4866720 US4896326 US5095487 US5119385 US5541947 US5637966 US5987045 US5997529 US6270221 US6271914]%;\\As01mesant\Procite Databases\WCS\Patents\US04764930__.pdf;' H01S 3/10 +352510etworkK==XqXh12.2.2x=XqXh512710==XqXh US4767171 ==XqXhDetworkK==XqXh12.2.2x=XqXh512710==XqXh US4767171 ==XqXhD55 US6061487 US6075635+==XqXh134 US4296998 Um#SN~8<@ ]Kobayashi, Yoshihiko//Kakegawa, Yuuji//Takahashi, Yukio//Takizawa, Yasushi//Sasayama, Atsushi]`;=XqjOptoelectronics device`;=Xqj12.2.3=Xqj252865`;=Xqj US4768070 `;=XqjJP JP`;=Xqj 8/30/1988 `;=Xqj#JP62219672A2 JP62219673A2 US4768070#`;=XqjcUSRE27879 US3562404 US4119363 US4270134 US4296998 US4338577 US4351051 US4632504 US4659170 US4686678c`;=Xqj"?US4995696 US5052005 US5155578 US5233580 US5404368 US5453638 US6051848 US6171877 US5052009 US5068866 US5504349 US5550675 US6275513 US6326228 US5250819 US5285462 US5808325 US5814871 US5557116 US5675597 US6193130 US6222871 US4945524 US4954853 US5089861 US5140384 US5394430 US5399858 US5748658 US5798556 US6226425 US6233263?`;=Xqj%;\\As01mesant\Procite Databases\WCS\Patents\US04768070__.pdf;`;=Xqj' H01L 31/12 `;=Xqj>+32`;=Xqj2530b07.50=.qb3572700=.qb US4774205 0=.qbUS0=.qbb07.50=.qb3572700=.qb US4774205 0=.qbUS0=.qb36 US5557120 US6143582 US6232136 US4845044 US4876219 US4994867 US5013682 US5108947 US5138407 US5242839 US5244834 US5362671 US5376561 US489US5108947 US5138407 US5242839 US5244834 US5362671 US5376561 US4894N~28<@ .Turner, George W.//Choi, Hong K.//Tsaur, B. Y..0=.qb>Monolithic integration of silicon and gallium arsenide devices>0=.qb07.50=.qb3572700=.qb US4774205 0=.qbUS0=.qb 9/27/1988 0=.qbQAT0082431E DE3782552C0 DE3782552T2 EP0250171A1 EP0250171B1 JP63018661A2 US4774205Q0=.qb'US4561916 US4575924 US4587717 US4632712'0=.qbFischer et al., Monolithic Integration of GaAs/AlGaAs . . . Silicon Circuits,Appl. Phys. Lett., 47(9), Nov. 1, 1985, pp. 983-985. Choi et al., Monolithic Integration of Si MOSFETs and GaAs MESFETs, IEDM, Nov. 30, 1985, pp. 766 and 767. Morkoc et0=.qb"US4940672 US4963508 US5151764 US5155050 US5528397 US5539550 US5760462 US5895929 US5169798 US5206749 US5548136 US5557120 US6143582 US6232136 US4845044 US4876219 US4994867 US5013682 US5108947 US5138407 US5242839 US5244834 US5362671 US5376561 US4896194 US4918507 US5286985 US5300788 US5453405 US5512756 US5574308 US5668023 US4935385 US4937517 US5258320 US5258325 US5702963 US5757445 US5073520 US5075239 US5021361 US5064781 US5377031 US5438018 US497<|=? Goldstein, Mark K.>Multiband emitter matched to multilayer photovoltaic collector>11.3.7460730 US4776895 US 10/11/1988  US4776895 E. S. Vera et al., Conference Record, 15th IEEE Photovoltaic Specialists Conf.(1981), pp. 877-882. E. S. Vera et al., Proceedings, 4th E.C. Photovoltaic Solar Energy Conf.(Stresa), Reidel Pub. Co. (1982), pp. 659-665.=8zuв 11/15/1988 ^N~88<@ Baer, Thomas M.=8zuвFHigh efficiency mode matched solid state laser with transverse pumpingF=8zuв12.5.3 /=8zuв0=8zuв US4785459 =8zuвUS=8zuв 11/15/1988 =8zuвDE3614401A1 DE3614401C2 FR2581486A1 FR2581486B1 GB2175127A GB2175127B GB2218845A GB2218845B GB8608517A GB8827117A GB8904717A JP00058951A2 JP07028072B4 JP2000058951A2 JP61253878A2 US4653056 US4656635 US4756003 US4785459 US4837771 US4872177 US4894839 US4908832 US5181223 US5271031=8zuв;US3736518 US4329659 US4383318 US4555786 US4703491 US4710940;=8zuв"]US5080706 US5081639 US5159605 US5175741 US5369661 US5485482 US5590147 US5615043 US5131002 US5148441 US5263951 US5268913 US5825803 US5840239 US5227911 US5257277 US5271031 US5299222 US5315612 US5339328 US5703702 US5748654 US6172996 US5546222 US5548608 US5949932 US6129884 US4837771 US4890289 US5091915 US5097477 US4945544 US5048044 US5117436<1? Gordon, Eugene I.(Hybrid distributed bragg reflector laser(10.4.2346125 US4786132 US 11/22/1988  US4786132 US4156206 US4466694 US4704720^C. A. Park, et al. Single-Mode Behavior, etc., Electronics Letters, vol. 22, No. 21 Oct. 1986.^"SUS5729641 US5828681 US4911516 US4952019 US5271030 US5305336 US5659559 US5668902 US6243517 US6278721 US5485481 US5521999 US6293688 US6310997 US6327402 US6341189 US6088376 US6125222 US6321011 US6324204 US5128798 US5271024 US5832011 US5870417 US5930430 US6044093 US6233259 US6243404 US5337382 US5479549 US4993}035 US5091916 US5715263 US5717804S%6\\Aeron\Procite Databases\WCS\Patents\US04786132__.pdf6' G02B 6/34 +342590^N~8<@( Thornton, R.L.//Paoli, Thomas L. =.q%CMonolithic two dimensional waveguide coupled cavity laser/modulatorC=.q%05.2.4=.q%635240=.q% US4802182 =.q%US=.q% 1/31/1989 =.q% US4802182 =.q%'US4028146 US4136928 US4558449 US4594603'=.q%Sham et al., Monolithic Integration of GaAs (GaAl)As Light Modulators and Distributed-Bragg-Reflectors Lasers, Appl. Phys. Lett. 32(5), Mar. 1, 1978, pp. 314-316. K. Wakita et al, Long-Wavelength Waveguide Multiple Quantum Well (MQW) Optical Modulat=.q%"IUS5126803 US5136604 US5238867 US5252513 US5465171 US5497181 US4995049 US5005176 US5200969 US5214664 US5145792 US5151915 US5007063 US5023878 US5165105 US5185754 US5287376 US5321714 US5574491 US5574741 US5138624 US5138626 US5384797 US5418800 US5023882 US5058121 US5323026 US5383216 US5742423 US5764273 US5267255 US5268973 US6226310I=.q%%;\\As01mesant\Procite Databases\WCS\Patents\US04802182__.pdf;=.q%'H01S 3/19; H01S 3/10=E.q%+33=.q%2600735=XqX US4803689 =XqXJP=XqX2/7/1989=XqXRDE3788735=XqX US4803689 =XqXJP=XqX2/7/1989=XqXRDE3788 N~I<@2 Shibanuma, Naoki=XqXSemiconductor laser module=XqX12.2.3=XqX395735=XqX US4803689 =XqXJP=XqX2/7/1989=XqXRDE3788546C0 DE3788546T2 EP0259888A2 EP0259888A3 EP0259888B1 JP63070589A2 US4803689R=XqXUS4615031 US4616899=XqX"+US5005178 US5026134 US5074682 US5100507 US5107537 US5124281 US5233622 US5399858 US5646674 US5673350 US5065226 US5073047 US5195102 US5195155 US5550675 US5640407 US5960142 USD314176 US4834490 US4887271 US5029968 US5049762 US5127074 US5156999 US5197076 US5212699 US5216737 US5227646 US5409482 US5469456+=XqX%;\\As01mesant\Procite Databases\WCS\Patents\US04803689__.pdf;=XqX' H01S 3/45 =XqX+30=XqX2610=zs'540885=zs' US4809291 =zs'US=zs' 2/28/1989 =zs'540885=zs' US4809291 =zs'US=zs' 2/28/1989 aser; Sov. 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