\ |<$t3T)T)T)   " J }WT$ee"dd;E'@C 6\)Obj CC:\PROGRA~1\ProCite5\Styles\Standard\ANSI-Am National Standards.posTimes New Roman Reference List. ߃P)扰߃PObj MObj iURL&ChapITitleNAuthorDateCites,USTR#STR#aanllalelestheEPUDTRSLDOMS6[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?DOMS[?[?[?[?[?DOMS6[?[?[?[?[?[?E#H[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?[?DOMS[?[?[?[?[?TROS6, TROS9>(,,TROSTROS2.`   '@}B;^   '@}B;^^@l ;k\)TROS "#$%TROS &'()TROS *+,-RSET8Jw.疱ξk!H@7@h?I%s~Jce@\ <P! D   ((@@N   RSETq "@   @<@ $@ RSET*|@/ - PRSETn @2.`   '@}B;^ !TROS "#$%RSET8Jw.疱ξk!H@7@h?I%s~Jce@\ <P! D   ((@@N   RSETq "@   @<@ $@ RSET*|@/ - PRSETn @2.`   '@}B;^a+ X TROSTROS \). 4, major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high-power operation. The present advanced stage of development of SiC substrates and metal-oxide-semiconductor technology makes SiC the leading contender for high-temperature and high-power applications if ohmic contacts and interface-st ate densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relat ively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high-temperat ure performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC l ight-emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN-based LEDs. These products should find wide use in full color display and other technologies. ;1?<3Adams, A. R. //Asada, M. //Suematsu, Y. //Arai, S. 3l=o/3Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo3l=o/wThe Temperature-Dependence of the Efficiency and Current of In1-Xgaxasyp1-Y Lasers Related to Intervalence Absorptionwl=o/10.1.2l=^N~ (L)A $M_DJ 4L @_,L ]DA 4A $M_DJ 4L @_,L ]DA 582-595A $M_DJ 4L @_,L ]DA %C\\As01mesant\Procite Databases\WCS\Articles/Kobayashi N 1982 04.pdfC\A $M_DJ 4L @_,L ]DA +266A $M_DJ 4L @_,L ]DA 48820;@)Yamamoto, Y. //Machida, S. //Nilsson, O. )=xSXjNippon Telegraph & Tel Publ Corp,Musashino Elect Commun ; Royal Inst Technol/S-10044 Stockholm 70//Swedenj=xSX?Amplitude Squeezing in a Pump-Noise-Suppressed Laser Oscillator?=xSX10.4.3=xSX Physical Review A=xSX Article$M_@_-1986$M_@_-34$M_@_-5$M_@_- 4025-4042 $M_@_-%B\\As01mesant\Procite Databases\WCS\Articles/Yamamoto Y 1986 11.pdfB$M_@E_-+261$M_@_-50590;@"Yeh, P. //Yariv, A. //Hong, C. S. "=vCaltech/Pasadena//Ca/91125=vKElectromagnetic Propagation in Periodic Stratified Media .1. General TheoryK=v05.3.1=v )Journal of the Optical Society of America)=v Article$M_ 9D:@_<:\67$M_ 9D:@_<:\4$M_ 9D:@_<:\423-438$M_ 9D:@_<:y\%8\\As01mesant\Procite Databases\WCS\Articles/Yeh 1977.pdf8+239$M_ 9D:@_<:\50840elegraph & Tel Pub@_TR38200?oBx <4 ,,,DTL \ d l,t|* ,,,, #$%'(),+,,-./,1 123d)57$8,:,:4=<?DALBTD,D dF\GlHtI|J,KLN,OPQQ -R -STUWW-XZ-\]_$-`bcdfhh h,-ij4-l$m,n4o<p<-qD-rLsDuL-u \wTxlydztzT-{|l)}|~\- d-l-t-)|-- *,4 *$*<--DLT-\dlt-*|---,4<DLT\ dzpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0&<v Illinois,Coordinated Sci Lab/Urbana//Il/61801q=rJ: YLarge-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor-Device Technologies=rJ: =rJ: =rJ: =rJ: )=rJ: 12.0=rJ:  Journal of Applied Physics=rJ:  Review$M_dT@_Ld Aug 1, 1994 $M_dT@_Ld76$M_dT@_Ld3$M_dT@_Ld 1363-1398 $M_dT@_Ld213$M_dT@_Ld%@\\As01mesant\Procite Databases\WCS\Articles\Morkoc H 1994 08.pdf@$M_dT@_Ld* In the past several years, research in each of the wide-band-gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high-power operation. The present adva;1?<3Adams, A. R. //Asada, M. //Suematsu, Y. //Arai, S. 3l=o/3Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo3l=o/wThe Temperature-Dependence of the Efficiency and Current of In1-Xgaxasyp1-Y Lasers Related to Intervalence Absorptionwl=o/10.1.2l=^N~4g.=@ IAbernathy, C. R. //Pearton, S. J. //Caruso, R. //Ren, F. //Kovalchik, J. I7=^q!ԫ$At&T Bell Labs/Murray Hill//Nj/07974$7=^q!ԫMUltrahigh Doping of GaAs by Carbon During Metalorganic Molecular-Beam EpitaxyM7=^q!ԫ06.4.17=^q!ԫ Applied Physics Letters7=^q!ԫ Article$M_\=>@_>4\ 1989 OCT 23 $M_\=>@_>4\55$M_\=>@_>4\17$M_\=>@_>4\ 1750-1752 $M_\=>@_>4\%D\\As01mesant\Procite Databases\WCS\Articles\Abernathy CR 1989 10.pdfD+183$M_\=>@_>4\10<@GMorkoc, H.//Strite, S.//Gao, G. B.//Lin, M. E.//Sverdlov, B.//Burns, M.G=rJ: qUniv Illinois,Mat Res Lab,104 S Goodwin Ave/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801q=rJ: YLarge-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor-Device Technologies=rJ: =rJ: =rJ: =rJ: )=rJ: 12.0;1?<3Adams, A. R. //Asada, M. //Suematsu, Y. //Arai, S. 3l=o/3Tokyo Inst Technol,Dept Phys Electr,Meguro Ku/Tokyo3l=o/wThe Temperature-Dependence of the Efficiency and Current of In1-Xgaxasyp1-Y Lasers Related to Intervalence Absorptionwl=o/10.1.2l=l=o/10.1.2l=z :jN~E,TPf=@qI< Physical Review LettersPf=@qI< 1966 Aug 8 $M_l\@_Tbl17$M_l\@_Tbl312-316Pf=@qI<Pf=@qI<%C\\As01mesant\Procite Databases\WCS\Articles\Hopfield JJ 1966 08.pdf,$M_l\@_Tbl]$M_l\@_Tbl+275$M_l\@_Tbl61650n;@2 Adams, A. R.  c=tt6Univ Surrey,Dept Phys/Guildford Gu2 5xh/Surrey/England6c=ttQBand-Structure Engineering for Low-Threshold High-Efficiency Semiconductor-Lasers2=tt =tt=tt10.2.1c=tt Electronics Lettersc=tt Article@_,@_ ,1986@_,@_ ,22@_,@_ ,5@_,@_ ,249-250@_,@_ ,%@\\As01mesant\Procite Databases\WCS\Articles/Adams AR 1986 02.pdf@@N_,@_ ,+358@_,@_ ,50Dept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/55434p=oUHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasHDept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/55434p=oUHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasHIyS T\V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the fo rm of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.$M_l\@_TGl+104$M_l\@_T @Gl,Electron$M_l\@_TGl70;@PAgrawal, G. P. P=pr$At&T Bell Labs/Murray Hill//Nj/07974$P=pr\Population Pulsations and Nondegenerate 4-Wave Mixing in Semiconductor-Lasers and Amplifiers\P=pr10.2.5(/=pr =Journal of the Optical Society of America B-Optical Physics ;=P=pr Article$M_ @_ 1988$M_ @_ 5$M_ @_ 1$M_ @_ 147-159$M_ @_ %B\\As01mesant\Procite Databases\WCS\Articles/Agrawal GP 1988 01.pdfB$M_ @_ +145($M_ @_ 807==?#Olbright, Gregory R. //Jewell, J.L.=@o,=@o,=@o,GIntegration of transistors with vertical-cavity surface-emitting lasersG=@o,11.4=@o, US5283447 =@o,+2666f~2DL>=@FTAdesida, I. //Mahajan, A. //Andideh, E. //Khan, M. A. //Olsen, D. T. //Kuznia, J.N. Tp=oUUniv Illinois,Ctr Compound Semicond ; Univ Illinois,Dept Elect & Comp Engn/Urbana//Il/61801 ; Apa Opt Inc/Minneapolis//Mn/55434p=oUHReactive Ion Etching of Gallium Nitride in Silicon Tetrachloride PlasmasHp=oU08.2.3p=oU Applied Physics Lettersp=oU Article$M_l\@_TGl Nov 15, 1993 $M_l\@_TGl63$M_l\@_TGl20$M_l\@_TGl 2777-2779 $M_l\@_TGl%A\\As01mesant\Procite Databases\WCS\Articles\Adesida I 1993 11.pdfA$M_l\@_TGl*The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 ;=?PAgrawal, G. P. P=pr$At&T Bell Labs/Murray Hill//Nj/07974$P=pr\Population Pulsations and Nondegenerate 4-Wave Mixing in Semiconductor-Lasers and Amplifiers\P=pr10.2.5(/=pr =Journal of the Optical Society of America B-Optical Physics=@o,+26(=@o,64200^N~ Ld(=@o,64200;@dAgrawal, G. P. 0=pr$At&T Bell Labs/Murray Hill//Nj/07974$0=prbGain Nonlinearities in Semiconductor-Lasers: Theory and Application to Distributed Feedback Lasersb0=pr10.4.20=pr #IEEE Journal of Quantum Electronics#0=pr Article$M_@_1987$M_@_23$M_@_6$M_@_860-868$M_@_%B\\As01mesant\Procite Databases\WCS\Articles/Agrawal GP 1987 06.pdfB$M_@_+146$M_@_100 mz =@(Capasso, F. //Mohammed, K. //Cho, A. Y. (`=piAt&T Bell Labs,Electr & Photon Mat Res Dept,Solid State ; Univ Illinois,Dept Elect Engn/Urbana// Il/61801i`=pResonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications` =p04.1.1.1`=p #IEEE Journal of Quantum Electronics#`=p Article$M_ST@_T 1986 SEP$M_ST@_T22$M_ST@_T9$M_ST@_T 1853-1869 $M_ST@_T%A\\ yAs01mesant\Procite Databases\WCS\Articles/Capasso F 1986 09.pdfA+443$M_ST@_T6640frequencies7x=t@05.2.2x] <l~>\l ];@Purcell, E. M.x=t@7Spontaneous emission probabilities at radio frequencies7x=t@05.2.2x =t@ Physical Reviewx=t@1946"$M_""@_"N"69"$M_""@_"N"681"$M_" "@_"N"%?\\As01mesant\Procite Databases\WCS\Articles\Purcell em 1946.pdf,"$M_""@_"N""$M_""@_"N"51690 ;@BAlbrektsen, O. //Arent, D. J. //Meier, H. P. //Salemink, H. W. M. B?=@u0'Ibm Corp,Div Res,Zurich Res Lab/Ch-8803'?=@u0 UTunneling Microscopy and Spectroscopy of Molecular-Beam Grown GaAs-AlGaAs InterfacesU?=@u006.1.3?=@u0 Applied Phys ics Letters?=@u0 Article$M_dGH@_HL  1990 JUL 2 $M_dGH@_HL 57$M_dGH@_HL  1$M_dGH@_HL 31-33$M_dGH@_HL %D\\As01mesant\Procite Databases\WCS\Articles\Albrektsen O 1990 07.pdf,$M_dGH@_HL _$M_dGH@_HL +113$M_dGH@_HL 150 H=(t3 At&T Bell Labs/Holmdel//Nj/07733 H=(t3+Quantum Transport in an Electron-Wave Guide+H=(t3 H=(t3 At&T Bell Labs/Holmdel//Nj/07733 H=(t3+Quantum Transport in an Electron-Wave Guide+H=(t3 2bd, ;@Timp, G. //Chang, A. M. //Mankiewich, P. //Behringer, R. //Cunningham, J. E. //Chang, T. Y. //Mankiewich, P. //Behringer, R. //Cunningham, J. E. //Chang, T. Y. //Howard, R. E.  H=(t3 At&T Bell Labs/Holmdel//Nj/07733 H=(t3+Quantum Transport in an Electron-Wave Guide+H=(t3 03.4.2H=(t3H=(t3 Physical Review LettersH=(t3 Article$M_@_,b  1987 Aug 10 $M_@_,b59$M_@_,b6$M_@_,b732-735$M_@_,b%>\\As 01mesant\Procite Databases\WCS\Articles\Timp G 1987 08.pdf,$M_@_,b$M_@_,b+209$M_@_,b51710 t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 12810 t $M_}  @_ R t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 12810 t $M_}  @_ R t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 12810 t $M_}  @_ R t %<\\Aeron\Procite Databases\WCS\Articles/Dohler GH 1986 09.pdf<t $M_}  @_ Rt +143t $M_}  @_ Rt 128103cN~,| Physical Review LettersHHB ArticleHHBP 1987 Jun 29 HHBP58HHBP26HHBP 2814-2817 HHBP%>\\As01mesant\Procite Databases\WCS\Articles\Timp G 1987 06.pdf,HHBPuHHBP+145HHBP51720;@rTimp, G. //Baranger, H. U. //Devegvar, P. //Cunningham, J. E. //Howard, R. E. //Behringer, R. //Mankiewich, P. M. r J=rL At&T Bell Labs/Holmdel//Nj/07733 J=rL?Propagation Around a Bend in a Multichannel Electron Wave-Guide? J=rL03.4.2/=rL/=rL Physical Review Letters J=rL Article$M_st@_tL 1988 May 16 $M_st@_tL60$M_st@_tL20$M_st@_tL 2081-2084 $M_st@_tL%>\\As01mesant\Procite Databases\WCS\Articlest\Timp G 1988 05.pdf>$M_st@_tL+133$M_st@_tL51730ombination Velocity on N-Type InP<=@s=@s02.3.2=@s Applied Physics Lettersombination Velocity on N-Type InP<=@s=@s02.3.2=@s Applied Physics Lettersk+t*;@Casey, H. C. //Buehler, E. =@s'Bell Tel Labs Inc/Murray Hill//Nj/07974'=@s=Evidence for Low Surface Recombination Velocity on N-Type InP<=@s=@s02.3.2=@s Applied Physics Letters=@s Article9$M_4l@_d,719779$M_4l@_d,7309$M_4l@_d,759$M_4l@_d,7247-2499$M_4l@_d,7%=\\As01mesant\Procite Databases\WCS\Articles/Casey HC 1976.pdf=9$M_4l@_d,7+1659$M_4l@_d,751740;@&kNelson, R. J. //Williams, J. S. //Leamy, H. J. //Miller, B. //Casey, H. C. //Parkinson, B. A. //Heller, A. kxj=v_'Bell Tel Labs Inc/Murray Hill//Nj/07974'xj=v_FReduction of GaAs Surface Recombination Velocity by Chemical TreatmentFxj=v_08.2.1xj=v{ =1?nOsbourn, G. C.H=pȒ&Sandia Natl Labs/Albuquerque//Nm/87185&H=pȒ,Strained-Layer Superlattices: a Brief Review,H=pȒ04.2.0H=pȒ #IEEE Journal of Quantum Electronics#H=pȒ Review$M_ľ@_ĵ1986$M_ľ@_ĵ22$M_ľ@_ĵ9$M_ľ@_ĵ 1677-1681 $M_ľ@_ 61550ĵ+126$M_ľ@_ĵ 61550} =mN~, metallic and dielectric materials can be used to obtain the required three-dimensional periodic variations in dielectric constant, but dissipation due to free carrier absorption will limit application of such structures at the technologically useful infrared wavelengths(4), On the other hand, three-dimensional photonic crystals fabricated in low-loss gallium arsenide show only a weak 'stop band'  (that is, range of frequencies at which propagation of light is forbidden) at the wavelengths of interest(5), Here we report the construction of a three-dimensional infrared photonic crystal on a sili con wafer using relatively standard microelectronics fabrication technology, Our crystal shows a large stop band (10-14.5 mu m), strong attenuation of light within this band (similar to 12 dB per unit cell) and a spectral response uniform to better than 1 per cent over the area of the 6-inch wafer.Op'$M_y'|"@_t"p'+94p'$M_y'|"@_t"p',Band-Gap .p'$M_y'|"@_t"p'51770{ =U=?J>Bowers, J. E. //Hemenway, B. R. //Gnauck, A. H. //Wilt, D. P. >Э=غv(jAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; S#Э=غv( Article$M_@_ 1986 JUN$M_@_ 22$M_@_ 6$M_@_ 833-844$M_@_ %9\\Aeron\Procite Databases\WCS\Articles/Bowers JE 1986.pdf9$M_O@_ +117$M_@_ 5450h.=U=?xAgrawal, G. P. //Olsson, N. A. @=@r7RUniv Rochester,Inst Opt/Rochester//Ny/14627 ; at&T Bell Labs/Murray Hill//Nj/07974R@=$TN~2*;@:Lin, S. Y. //Fleming, J. G. //Hetherington, D. L. //Smith, B. K. //Biswas, R. //Ho, K. M. //Sigalas, M. M. //Zubrzycki, W. //Kurtz, S. R. //Bur, J.  =8n|xSandia Natl Labs,Pob 5800,Albuquerque,Nm 87185 ; Iowa State Univ Sci & Technol,Ames Lab,Dept Phys & Astron,Ames,Ia 50011x =8n|FA Three-Dimensional Photonic Crystal Operating at Infrared WavelengthsF =8n|05.3.2 =8n| Nature =8n| Articlep'$M_y'|"@_t"p' Jul 16, 1998 p'$M_y'|"@_t"p'394p'$M_y'|"@_t"p'6690p'$M_y'|"@_t"p'251-253p'$M_y'|"@_t"p'%>\\As01mesant\Procite Databases\WCS\Articles/Lin SY 1998 07.pdf>0=8n|*OThe ability to confine and control light in three dimensions would have important implications for quantum optics and quantum-optical devices: the modification of black-body radiation, the localization of light to a fraction of a cubic wavelength, and thus the realization of single-mode light-emitting diodes, are but a few examples(1-3). Photonic crystals-the optical analogues of electronic crystal-provide a means for achieving these goals. Combinations of metallic and dielectric materials can be used to obtain the required three-dimensional periodic variations in dielectric constant, but dissipation due to free carrier absorption will limit applicatio{ =U=?J>Bowers, J. E. //Hemenway, B. R. //Gnauck, A. H. //Wilt, D. P. >Э=غv(jAt&T Bell Labs/Holmdel//Nj/07733 ; at&T Bell Labs/Murray Hill//Nj/07974 ; S Opt/Rochester//Ny/14627 ; at&T Bell Labs/Murray Hill//Nj/07974R@=abs/Murray Hill//Nj/07974R@=^N~,h.=@xAgrawal, G. P. //Olsson, N. A. @=@r7RUniv Rochester,Inst Opt/Rochester//Ny/14627 ; at&T Bell Labs/Murray Hill//Nj/07974R@=@r7aSelf-Phase Modulation and Spectral Broadening of Optical Pulses in Semiconductor-Laser Amplifiers9@=@r7@=@r7@=@r7@=@r7@=@r710.5.1@=@r7 #IEEE Journal of Quantum Electronics#@=@r7 Articlep$M_,y.@_.,p1989p$M_,y.@_.,p25p$M_,y.@_.,p11p$M_,y.@_.,p 2297-2306 p$M_,y.@_.,p%C\\As01mesant\Procite Databases\WCS\Articles/Agrawal GP 1989 11 .pdfCp$M_,y.@_.,p+168'p$M_,y.@_.,p120鞆=1?(Khan, M.A.//Schulze, R.G.//Skogman, R.A.HQ=o^HQ=o^HQ=o^QTunable cut-off UV de64210h.==?0John, S. //Wang, J. =IyԫEUniv Toronto,Dept Phys,60 St George St/Toronto M5s 1a7/Ontario/CanadaE=IyԫWQuantum Electrodynamics Near a Photonic Band-Gap: Photon Bound-States and Dressed AtomsW=Iyԫ05.3.4=Iyԫ Physical Review Letters=Iyԫ Article$$M_L-\\As01mesant\Procite Databases\WCS\Articles\John S 1990 05.pdf,@/hH9XXF`S(=Iyԫ+160$$M_L-\\As01mesant\Procite Databases\WCS\Articles/Winful HG 1982.pdf>=@_LF\\As01mesant\Procite Databases\WCS\Articles/Mendez EE 1984.pdf>$M_TD@_<\T+100$!$M_TD@_<\T51890";@Curtice, W. R. 2Rca Labs,Ctr Microwave Technol/Princeton//Nj/085402@A Mesfet Model for Use in the Design of GaAs Integrated-Circuits@09.1.1 4IEEE Transactions on Micr"owave Theory and Techniques4 Article1980285448-456%?\\As01mesant\Procite Databases\WCS\Articles/Curtice WR 1980.pdf?+13251900#;@ Fukui, H. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'.Optimal Noise-Figure of Microwave GaAs-Mesfets.09.1.3 %IEEE Transactions on Electron Devices% Article1979#s267 1032-1037 %?\\As01mesant\Procite Databases\WCS\Articles/Fukui H 1979 07.pdf?+14251910$=XKt<>Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima 774,Japan>#=XKt<ZHigh-Power ; Long-Lifetime Ingan/Gan/Algan-Based Laser Diodes Grown on $=XKt<>Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima 774,Japan>#=XKt<ZHigh-Power ; Long-Lifetime Ingan/Gan/Algan-Based Laser Diodes Grown on ?JzN~,ԫ=vԫ*gThree-dimensional crystals of air spheres in titania (TiO2) with radii between 120 and 1000 nanometers were made by filling the Voids in artificial opals by precipitation from a Liquid-phase chemical reaction and subsequently removing the original opal material by calcination. These macroporous materials are a new class of photonic band gap crystals for the optical spectrum. Scanning electron microscopy, Raman spectroscopy, and optical microscopy confirm the quality of the samples, and optical reflectivity demonstrates that the crystals are strongly photonic and near that needed to exhibit band gap behavior.g$M_,@_,+200$M_,@_,51800 >=@P+Iga, K//Soda H.//Kitahara C.//Suematsu Y.//+ $=nuN<,GaInAs/InP Surface Emitting Injection Lasers, $=nuN<11.2.1  $=nuN< #Japanese Journal of Applied Physics# $=nuN<1979$M_@_18$M_@_ 12$M_@_ 2329-2330 $M_@_%:\\As01mesant\Procite Databases\WCS\Articles\Iga K 1979.pdf,0=nuN 8<0=nuN<62800!;[?+Mendez, E. E. //Price, P. J. //Heiblum, M. +V=tM7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987V=tM+100$M_T!D@_<\T51890";1?Curtice, W. R. 2Rca Labs,Ctr Microwave Technol/Princeton//Nj/085402@A Mesfet Model for Use in the Design of GaAs Integrated-Circuits@09.1.1 4IEEE Transactions on Micr-~L$aser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 $h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any int$ erference effects.$M_,d@_\+98$M_,d@_\,JGan/ Ingan/ Dislocation/ Selective Growth/ Laser/ Violet/ Lifetime/ CleaveJ$M_,$ d@_\3800%==?KBrommer, K.D.//Mullaney, H.A.//Meade, R.D.//Rappe, A.M.//Joannopoulos, J.D.==@o_=@o_ =@o%_OLow-loss dielectric resonator having a lattice structure with a resonant defectO=@o_05.3=@o_ US5187461 %X=@o_+34=@o_64220&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450&@_\='8%6\\Aeron\Procite Databases\WCS\Articles\Ando T 1977.pdf'hb=,t:hb=,t:+1408$M_t;d=@_\='8450DtDt~2$o<@Nakamura, S. //Senoh, M. //Nagahama, S. //Iwasa, N. //Yamada, T. //Matsushita, T. //Kiyoku, H. //Sugimoto, Y. //Kozaki, T. //Umemoto, H. //Sano, M. //Chocho, K. #$=XKt<>Nichia Chem Ind Ltd,Dept Res & Dev,491 Oka,Tokushima 774,Japan>#=XKt<ZHigh-Power ; Long-Lifetime Ingan/Gan/Algan-Based Laser Diodes Grown on $Pure GaN SubstratesZ#=XKt<06.5.3#=XKt< 2Japanese Journal of Applied Physics Part 2-Letters2#=XKt<$ Article$M_,d@_\ Mar 15, 1998 $M_,d@_\ 37$M_,d@_\3b$M_,d@_\ $L309-L312 $M_,d@_\%@\\As01mesant\Procite Databases\WCS\Articles\Nakamura 1996 03.pdf@*Epitaxially laterally overgrown GaN on sapphire was used to reduce the number$ of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO2 mask area surrounding the window, corresponding to the lateral o$vergrowth, was nearly free of the threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multi-quantum-well-structure l%==?KBrommer, K.D.//Mullaney, H.A.//Meade, R.D.//Rappe, A.M.//Joannopoulos, J.D.==@o_=@o_ =@o%_OLow-loss dielectric resonator having a lattice structure with a resonant defectO=@o_05.3=@o_ US5187461 hb=,t:+1408$M_t;d=@_\='8450$M_t;d=@_\='8450^N~E&;@ Ando, T.  =,t:7Tech Univ Munich,Dept Phys/D-8000 Munich 2//Fed Rep Ger7=,t:QInter-Subband Optical-Absorpti&on in Space-Charge Layers on Semiconductor SurfacesQ=,t:04.3.3=,t: )Zeitschrift Fur Physik B-Condensed Matter)&=,t: Article8$M_t;d=@_\='8268$M_t;d=@_\='838$M_t;d=@_\='8263-2728$M_t;d=&@_\='8%;\\As01mesant\Procite Databases\WCS\Articles\Ando T 1977.pdf,hb=,t:hb=,t:+1408$M_t;d=@_\='8&450';@ Fukui, H. 'Bell Tel Labs Inc/Murray Hill//Nj/07974'=Determination of the Basic Device Parameters of a GaAs-Mesfet=09.1.1 Bell System Technical Journal Article'u1979583771-797%<\\As01mesant\Procite Databases\WCS\Articles/Fukui H 1979.pdf<+15251930(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144inear window in the {11 (2) over bar 0} direction. On the other hand, a trapezoidal structure with {1 (1) over bar 01} facets on the side and a (0001) facet on the top appears in the AlxGin the AlxGK{.^N~2,(o<@1Kato, Y.//Kitamura, S.//Hiramatsu, K.//Sawaki, N.1c=py0t;Nagoya Univ,Dept Electr,Chikusa Ku/Nagoya/Aichi 46401/Japan;c=py(0tmSelective Growth of Wurtzite GaN and Alxga1-Xn on GaN Sapphire Substrates by Metalorganic Vapor-Phase Epitaxymc=py0t06.5.2c=py(0t Journal of Crystal Growthc=py0t Article$M_<`t@_llMay 1994$M_<`t@_ll 144($M_<`t@_ll3-4$M_<`t@_ll133-140$M_<`t@_ll%@\\As01mesant\Procite Databases\WCS\Articles/Hiramats 1994 05.pdf@($M_<`t@_ll)bStates without reference that lateral transport from the masked regions is by gas-phase diffusion.b$M_<`t@_ll*The selective growth of( GaN and AlxGa1-xN (x = 0.1) by metalorganic vapor phase epitaxy has been carried out on GaN/sapphire substrates using SiO2 masks. It is found that the selectivity of GaN is good, but that of AlxGa1-x(N is relatively poor. Ridge growth occurs in the GaN selective growth on linear windows wider than 50 mu m, but does not in the AlxGa1-xN selective growth. {1 (1) over bar 01} facets appear in GaN on )s/AlxGa1-xAs .2. Low-Temperature MobilityK"=o 04.3.1"=o  (Journal of the Physical Society of Japan("=)o  Article!$M_T !D!@_<!T!1982 !$M_T !D!@_<!T!51!$M_T !D!@_<!T!12!$M_T !D!@_<!T 3893-3899$M_4@_,V430o^N~c,+X= q Article8$M_t;d=@_\=0819828$M_t;d=@_\=081138$M_t;d=@_\=081-38$M_t;d+=@_\=08124-1308$M_t;d=@_\=08%>\\As01mesant\Procite Databases\WCS\Articles\Ando T 1982 08.pdf,= q= q+B+1138$M_t;d=@_\=08490,;@Ando, T. //Mori, S.  :=uȒhUniv Tsukuba,Inst Appl Phys/Sakura/Ibaraki 30031/Japan ; Univ Tokyo,Dept Phys,Bunkyo Ku/Tokyo 113//Japanh, :=uȒElectronic-Properties of a Semiconductor Super-Lattice .1. Self-Consistent Calculation of Subband Structure and Optical-Spectra :=uȒ,04.2.1 :=uȒ (Journal of the Physical Society of Japan( :=uȒ Article$M_TD@_<T47$M,_TD@_<T5$M_TD@_<T 1518-1527 $M_TD@_<T%9\\As01mesant\Procite Databases\WCS\Articles/Ando 1979.PDF9$M_T,KD@_<T+115$M_TD@_<T500-n;[?%Ando, T. //Fowler, A. B. //Stern, F. %=ht ԫnUniv Tsukuba,Inst Appl Phys/Sakura/Ibaraki 305/Japan ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Htsof Two-Dimensional Systems -=ht ԫ-=ht ԫ%--=ht ԫ02.4.2=ht ԫ Reviews of Modern Physics=ht ԫ Articleo$M_$xz@_ z $o1982 Apr[8h-n;@%Ando, T. //Fowler, A. B. //Stern, F. %=ht ԫnUniv Tsukuba,Inst Appl Phys/Sakura/Ibaraki 305/Japan ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts-//Ny/10598n=ht ԫ0Electronic Properties of Two-Dimensional Systems -=ht ԫ-=ht ԫ%--=ht ԫ02.4.2=ht ԫ Reviews of Modern Physics=ht ԫ Articleo$M_$xz@_ z $o1982 Apr-+=ht ԫ+=ht ԫ54o$M_$xz@_ z $o2o$M_$xz@_ z $o437-672o$M_$xz@-_ z $o%>\\As01mesant\Procite Databases\WCS\Articles\Ando T 1982 04.pdf,W(hH9X-XF-+=ht ԫ+=ht ԫ+3080-1o$M_$xz@_ z $o460. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al., US33285841p =wo,-"R. Anderson et al.,'WN~,.܊(=@dEsaki, L.//Ludeke, R.//Tsu, R.p =wo,-p =wo,- p =wo,--Semiconductor Device with Super.lattice Region-p =wo,-04.3.1p =wo,-+International Business Machines Corporation+p =wo,-280070.p =wo,- US3626257 p =wo,-USp =wo,- 12/7/1971 p =wo,-7DE2014677A. DE2014677B2 DE2014677C3 GB1282708A US36262577p =wo,-1US3171068 US3467896 US3356866 US3479611 US33285841p =wo,-"R. Anderson et al.,. I.B.M. Technical Disclosure Bulletin, Vol. 3, No. 4, Sept. 1960. Article entitled, ""Multiple Junction Semiconductor."p =wo,-"US3737737 US3872400 US3882533 US3893.148 US4088515 US4103312 US4137542 US4163237 US4163238 US4194935 US4198644 US4205331 US4208667 US4250515 US4257055 US4261771 US4348686 US4349796 US4378255 US4469977 US4517047 US4558336 US4561005 US4575/Calculation of Photonic Band Structures in Face-Centered-Cubic Dielectric Media`(=vyfԫ05.3.2(=vyfԫ Physical Review Letters/(=vyfԫ Article$M_l@@_5 1990 Nov 19 (=vyfԫ65$M_l@@_521/$M_l@@_5 2646-2649 $M_l@@_5%;\\Aeron\Procite Databases\WCS\Articles\Leung KM 1990 11.pdf'@/hH9XXF(1 X=q, 2Japanese Journal of Applied Physics Part ^N~d)1 rent susceptibilities are obtained, together with scaling laws as a function of photon energy. Experimental results on different GaAs/AlxGa1-xAs asymmetric quantum wells optimized for second-harmonic 1 generation and optical rectifications are given, with optical rectification coefficients more than 10(6) higher than in bulk GaAs. These asymmetric quantum wells may be considered as giant "pseudomole1 cules" optimized for large optical nonlinearities in the 8-12-mu-m range.$M_@_+104$M_@_,eElectric-Field/ Mu-M/ 2nd-Harmonic Gen1 reration/ Transitions/ Rectification/ Absorption/ Detector/ Bande$M_@_519602n;@\Andrei, E. Y. //Deville, G. //Glattli, D. C. //Williams, F. I. B. //Paris, E. //Etienne, B. \=svoCnrs,Microstruct & Microelectr Lab/F-92220 Ba2gneux//France ; Cens,Cea,Inst Rech Fondamentale,Serv Phys Solide &o=sv2Observation of a Magnetically Induced Wigner Solid2=sv202.6.3=sv Physical Review Letters=sv Article$M_td@_\t 1988 Jun 272=sv=sv60$M_td@_\t26$M_td@_\t 2765-2768 $M_td@_\t%3n;1?Andres, R. P. //Averback, R. S. //Brown, W. L. //Brus, L. E. //Goddard, W. A. //Louie, S. G. //Moscovits, M. //Peercy, P. S. //Riley, S. J. //Siegel, R. W. //Spaepen, F. //Wang, Y.3 5=8r"`Purdue Univ,Sch Chem Engn/W Lafayette//in/47907 ; Univ Illinois,Dept Mat Sci & Engn/Urbana//Il/61801 ; at&T Bell Labs/Murray Hill//Nj/07974 ; Caltech,Arth8h~,0;@Yamanishi, M. //Suemune, I.  X=q,4Hiroshima Univ,Dept Phys Electr/Hiroshima 724//Japan4 X=q,QComment on Pol0arization Dependent Momentum Matrix-Elements in Quantum Well LasersQ X=q,10.2.1 X=q, 2Japanese Journal of Applied Physics Part 02-Letters2 X=q, Article$M_tyz@_z3\1984$M_tyz@_z3\23$M_tyz@_z3\10$M_tyz@_z3\L35-L36$M_tyz@_z3\%C\\As01mesant\Procite Databases\WCS\Articles/Yamanishi M 1984 01.pdfC+143$M_tyz@_z30\519501;@Rosencher, E. //Bois, P. @B=p`j/Thomson Csf,Cent Rech Lab/F-91404 Orsay//France/@B=p`jAModel System for Optic1al Nonlinearities: Asymmetric Quantum-WellsA@B=p`j03.3.4@B=p`j@B=p`j "Physical Review B-Condensed1 Matter"@B=p`j Article$M_@_ 1991 Nov 15 $M_@_44$M_@_210$M_@_ 11315-11327 $M_@_%C\\As01mesant\Procite Databases\WCS\Articles\Rosencher E 1991 11.pdf,$M_@_2n;[?\Andrei, E. Y. //Deville, G. //Glattli, D. C. //Williams, F. I. B. //Paris, E. //Etienne, B. \=svoCnrs,Microstruct & Microelectr Lab/F-92220 Ba2Observation of a Magnetically Induced Wigner Solid2=svt4dN~ 10$M_@_ 11315-11327 $M_@_%C\\As01mesant\Procite Databases\WCS\Articles\Rosencher E 1991 11.pdf,$M_@_1$M_@_*Optical nonlinearities in asymmetric quantum wells due to resonant intersubband transitions are analyzed using a compact density-matrix approach. The la1rge dipolar matrix elements obtained in such structures are partly due to the small effective masses of the host materials and are interpreted in terms of the participation of the whole band structure1 to the optical transitions. The other origin of the large second-order susceptibilities lies in the possibility of tuning independently the potential shape and the width of asymmetric quantum wells i1n order to obtain resonances (single or double) for a given excitation wavelength. Using a model based on an infinite-barrier quantum well, we have obtained very general and tractable formulas for sec1ond-order susceptibilities at resonance. This model allows us to fix additional fundamental quantum limitations to second-order optical nonlinearities. The "best potential shapes" maximizing the diffe2gneux//France ; Cens,Cea,Inst Rech Fondamentale,Serv Phys Solide &o=sv2Observation of a Magnetically Induced Wigner Solid2=sv202.6.3=sv Physical Review Letters=sv Article$M_td@_\t 1988 Jun 272=sv=sv60$M_td@_\t26$M_td@_\t 2765-2768 $M_td@_\t%abs/Murray Hill//Nj/07974 ; Caltech,Arth^N~ d)$3 l\@_T0]l5204;@X%Arakawa, Y. //Vahala, K. //Yariv, A. %=s.Caltech/Pasadena//Ca/91125=s.>Quantum Noise and Dynamics in Q4uantum Well and Quantum Lasers>=s.10.4.3=s. Applied Physics Letters=s. Article4$M_l\@_T4l1984$M_l\@_T4l45$M_l\@_T4l9$M_l\@_T4l950-952$M_l4\@_T4l%A\\As01mesant\Procite Databases\WCS\Articles/Arakawa Y 1984 11.pdfA$M_l\@_T4l+177$M_l\@_T4l6005n;@Aoki, H. //Ando, T. =q*!oUniv Cambridge,Cavendish Lab,Madingley Rd/Cambridge Cb3 ; Univ Tsukuba,Inst Appl Phys/Sakura/Ibaraki 305/Japano5=q*!gEffect of Localization on the Hall Conductivity in the Two-Dimensional System in Strong Magnetic-Fieldsg=q*!02.5.25=q*! Solid State Communications=q*! Article$M_|@_tjB1981$M_|@_tjB385$M_|@_tjB11$M_|@_tjB 1079-1082 $M_|@_tjB%;\\As01mesant\Procite Databases\WCS\Articles/Aoki H 1981.pdf5^;8y=q*!+233$M_|@_tjB5406;1?lArakawa, Y. //Yariv, A. !=!pCaltech/Pasadena//Ca/91125!=!pMTheory of Gain, Modulation Response, and Spe 7g6&,6;@lArakawa, Y. //Yariv, A. !=!pCaltech/Pasadena//Ca/91125!=!pMTheory of Gain, Modulation Response, and Spe6ctral AlGaAs Quantum Well LasersM!=!p10.2.1!=!p #IEEE Journal of Quantum Electronics#!=!p6 Article$M_@_41985$M_@_421$M_@_410$M_@_4 1666-16746 $M_@_4%A\\As01mesant\Procite Databases\WCS\Articles/Arakawa Y 1985 10.pdfA$M_@_4+184$M_@_462067;@ %Schuurmans, M. F. H. //Thooft, G. W. %l=vB 9Philips Res Labs,Pob 80000/5600 Ja Eindhoven//Netherlands9l=vB ;7Simple Calculations of Confinement States in a Quantum Well;l=vB 03.1.2hh=vB  "Physical Review B-Condensed Matter"l7=vB  Article$M_ @_*  1985 Jun 15 $M_ @_* 31$M_ @_* 12$M_ 8;1?QAsada, M. //Adams, A. R. //Stubkjaer, K. E. //Suematsu, Y. //Itaya, Y. //Arai, S.Ql=pr,Tokyo Inst Technol,Dept Phys Electr,2-12-1 O,8l=prLThe Temperature-Dependence of the Threshold Current of GaInAsp-Inp Dh LasersLl=pr10.1.2l=pr=pr10.1.2l=pr$M_ h(XN~,49n;@DArakawa, Y. //Sakaki, H. =p02Univ Tokyo,Inst Ind Sci,Minato Ku/Tokyo 106//Japan2=p0MMultidimensional Qu9antum Well Laser and Temperature- of Its Threshold CurrentM=p010.2.1=p0 Applied Physics Letters=9p0 Articlen$M_wy@_yR0n1982n$M_wy@_yR0n40n$M_wy@_yR0n11n$M_wy@_yR0n9939-941n$M_wy@_yR0n%>\\As01mesant\Procite Databases\WCS\Articles/Arakawa Y 1980.pdf>n$M_wy@_yR0n+891n$M_wy@_yR0n9 580:ϻ;@Z6Mukai, K. //Ohtsuka, N. //Sugawara, M. //Yamazaki, S. 6=8p0EFujitsu Labs Ltd,10-1 Morinosato Wakamiya/Atsugi/Kanagawa 24301/JapanE:=8p0MSelf-Formed In0.5ga0.5as Quantum Dots on GaAs Substrates Emitting at 1.3 Mu-MM=8p010.2.3=8p0:=8p0 2Japanese Journal of Applied Physics Part 2-Letters2=8p0 Article\!$M_e!g!@_g! \! Dec 1, 1994 :\!$M_e!g!@_g! \!33\!$M_e!g!@_g! \!12a\!$M_e!g!@_g! \! L1710-L1712 \!$M_e!g!@_g! \!%?\\As01mesant\Procite D;>=5m=?fTSollner, T. C. L.//Goodhue, W. D. //Tannenwald, P. E. //Parker, C. D. //Peck, D. D. T =sܫ#Mit,Lincoln Lab/Lexington//Ma/02173# p0`N~X,<:=8p0MSelf-Formed In0.5ga0.5as Quantum Dots on GaAs Substrates Emitting at 1.3 Mu-MM=8p010.2.3=8p0:=8p0 2Japanese Journal of Applied Physics Part 2-Letters2=8p0 Article\!$M_e!g!@_g! \! Dec 1, 1994 :\!$M_e!g!@_g! \!33\!$M_e!g!@_g! \!12a\!$M_e!g!@_g! \! L1710-L1712 \!$M_e!g!@_g! \!%?\\As01mesant\Procite D:atabases\WCS\Articles/Mukai K 1994 12.pdf?\!$M_e!g!@_g! \!*We grew 1.3-mu m emitting self-formed In0.5Ga0.5As quantum dots on GaAs substrates by supplying InAs and GaAs mono:layers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In0.1Ga0.9As in the lateral direction and by GaAs perpendicular to the dots.: Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement.\!$M_e!g!@_g! \!+103\!$M_e!g!@_g! \!,pQ:uantum Dots/ 1.3-Mu-M Emission/ Diamagnetic Shifts/ Ale/ Ingaas/ Excitons/ Confinement/ Islands/ Surface/ Wellsp\!$M_e!g!@_g! \!60250;=sܫEResonant Tunneling Through Quantum Wells at Frequencies up to 2.5 ThzE =sܫ09.2.4 =sܫ Applied Physic;=sܫEResonant Tunneling Through Quantum Wells at Frequencies up to 2.5 ThzE =sܫ09.2.4 =sܫ Applied Physic8hN~ 4D;>=@fTSollner, T. C. L.//Goodhue, W. D. //Tannenwald, P. E. //Parker, C. D. //Peck, D. D. T =sܫ#Mit,Lincoln Lab/Lexington//Ma/02173# ;=sܫEResonant Tunneling Through Quantum Wells at Frequencies up to 2.5 ThzE =sܫ09.2.4 =sܫ Applied Physic;s Letters =sܫ Article3I$M_4I@_>I$ 43I19833I$M_4I@_>I$ 43I433I$M_4I@_>I$ 43I6;3I$M_4I@_>I$ 43I588-5903I$M_4I@_>I$ 43I%@\\As01mesant\Procite Databases\WCS\Articles/Sollner TCL 1983.pdf@ =sܫ+606;13I$M_4I@_>I$ 43I52070< B BMatthews, J.W.HLMatthews, J.W.HLEd.HLEpitaxial Growth<HLNew YorkHLp|AcademicHLp|1975HLp|559<*HLp|66760=;@"Sutherland, J. E. //Hauser, J. R. "#=0p'N Carolina State Univ/Raleigh//Nc/27607'#=0pFComputer-Analysis of =Heterojunction and Graded Composition Solar-CellsF#=0p11.3.6#=0p %IEEE Transactions on Electron Devices%#:Fan, S.//Villeneuve, P.R.//Meade, R.D.//Joannopoulos, J.D.:(=tb6IThree-dimensional periodic dielectric structures having photonic bandgapsI)Y'WN~ <L==0p Article$M_D-|.@_t. 1977$M_D-|.@_t. 24$M_D-|.@_t. 4$M_D-|.@_t. =363-372$M_D-|.@_t. %B\\As01mesant\Procite Databases\WCS\Articles/Sutherland JE 1977.pdfB$M_D-|.@_t. +108$M_D-|.@_t.= 51990>G==?:Fan, S.//Villeneuve, P.R.//Meade, R.D.//Joannopoulos, J.D.:(=tb6IThree-dimensional periodic dielectric structures having photonic bandgapsI>(=tb605.3X=tb6+24(=tb664230?;@Bauer, G. E. W. //Ando, T. =oP-|Philips Res Labs,Post Box 80000/5600 Ja Eindhoven//Netherlands ; Univ Tokyo,Inst Solid State Phys,Minato Ku/To?kyo 106//Japan|=oP-Exciton Mixing in Quantum Wells=oP-03.1.5/=oP- "Physical Review B-Co?ndensed Matter"=oP- Article$M_@_Z# 1988 Sep 15 $M_@_Z#38$M_@_Z#?9$M_@_Z# 6015-6030 $M_@_Z#%A\\As01mesant\Procite Databases\WCS\Articles\Bauer GEW 1988 09.pdf,$M_@_?dZ#$M_@_Z#+177$M_@_Z#730^$M_Dg4i@_,i D^12^$M_Dg4i@_,i D^ L2112-L2114 ^$M_Dg4i@_,i D^%:\\Aeron\Procite Databases\WCS\Articles/AmZ#730k+ dDT@h.=@"3Amano, H. //Kito, M. //Hiramatsu, K. //Akasaki, I. 3x=ȼs<2Nagoya Univ,Dept Electr,Furo Cho,Chikusa Ku/Nagoya2x=ȼs<@[P-Type Conduction in Mg-Doped GaN Treated With Low-Energy Electron-Beam Irradiation (Leebi)[x=ȼs<)01.5.4 Hydrogen Complexes and Passivation)x@=ȼs< 2Japanese Journal of Applied Physics Part 2-Letters2x=ȼs< Article^$M_Dg4i@_,i D^1989^$M_Dg4i@@_,i D^28^$M_Dg4i@_,i D^12^$M_Dg4i@_,i D^ L2112-L2114 ^$M_Dg4i@_,i D^%?\\As01mesant\Procite Databases\WCS\Articl@ues/Amano H 1989 12.pdf?x=ȼs<+579^$M_Dg4i@_,i D^290A| =@!Chang, Y. C. //Schulman, J. N. X-=+tܫUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Hawaii,Dept PAhys & Astron/Honolulu//Hi/96822X-=+tܫWModification of Optical-Properties of GaAs-Ga1-xAlxAs Super-Lattices Due to Band MixingWX-=+tܫA04.2.1X-=+tܫ Applied Physics LettersX-=+tܫ Articlel$M_ԇ @_ |j1983l$M_ԇ A@_ |j43l$M_ԇ @_ |j6l$M_ԇ @_ |j536-538l$M_ԇ @_ |j%@\\As01mesant\Procite Databases\WCS\Articles/CAshang YC 1983 09.pdf@8 =+tܫ+114l$M_ԇ @_ |j8450linois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/6180 ;kN~L,B;@*-Masselink, W. T. //Chang, Y. C. //Morkoc, H. -}=xDuUniv Illinois,Dept Phys/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/6180B1 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Univ Illinois,Dept Elect Engn/Urbana//Il/61801}=xDu>Binding-Energies of Acceptors in GaAs-AlxGa1-xAs Quantum WellsB>}=xDu03.1.5$=xDu "Physical Review B-Condensed Matter"}=xDu Article$M_TDB@_<T 1983 Dec 15 $M_TD@_<T28$M_TD@_<T12$M_TD@_<T 7373-7376 $M_TD@B_<T%D\\As01mesant\Procite Databases\WCS\Articles\Masselink WT 1983 12.pdf,$M_TD@_<T$M_TD@_<T+119$M_TD@_<BT52010C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170C"$M_""@_"$"302-304"$M_""@_"$"%=\\Aeron\Procite Databases\WCS\Articles/Kaminska M 1983 08.pdf="$M_""@_"$"+170 Physics C-Solid State Phys"$"16700x8N~dlE>=@ LGlass, A. M. //Johnson, A. M. //Olson, D. H. //Simpson, W. //Ballman, A. A. L At&T Bell Labs/Holmdel//Nj/07733 N4-Wave Mixing in Semi-Insulating InP and GaAs Using the PhotorEefractive EffectN05.1.3 Applied Physics Letters Article19844410948-950%@\\As01mesant\Procite Databases\WCS\Articles/Glass AM 1984 05.pdf@8w-=0nEb+1243230F;@HBryant, G. W. x=vTLMcdonnell Douglas Corp,Mcdonnell Douglas Res Labs,Pob 516/St Louis//Mo/63166Lx=vTFExciFtons in Quantum Boxes: Correlation-Effects and Quantum ConfinementFx=vT03.5.3x=vT "Physical Review B-Condensed Matter"Fx=vT Articley$M_t@_l*gy 1988 May 15 y$M_t@_l*gy37y$M_t@_l*gy15y$FM_t@_l*gy 8763-8772 y$M_t@_l*gy%A\\As01mesant\Procite Databases\WCS\Articles\Bryant GW 1988 05.pdf,y$M_t@_l*gyy$MFQ_t@_l*gy+154y$M_t@_l*gy52040G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6 <lCs,\Dal calculations have been made of the rates of scattering and momentum relaxation of electrons caused by unscreened polar optical phonons in quasi-two-dimensional layers, using a simple infinite-depthD square-well model. The results are compared with approximate analytic formulae, and with the situation in the bulk. Some of the major differences from scattering in the bulk are (i) an abrupt threshoDld for phonon emission appears, (ii) rates just above threshold are enhanced and (iii) the scattering just above the threshold of emission is more isotropic. These differences are intimately related tDo the energy dependence of the density of states and to the polar interaction, and are expected to be largely independent of the model. The form of the polar interaction strongly favours intra-sub-banDd scattering over inter-sub-band scattering and this effect has consequences for the luminescent spectrum expected from hot injected carriers. The large increase of the momentum relaxation rate at theD emission threshold has consequences for transport phenomena ,arialM_TD@_<T rialM_TD@_<T+134rialM_TD@_<T52030E>=1? LGlass, A. M. //Johnson, A. M. //Olson, D. H. //Simpson, W. //Ballman, A. A. L At&T Bell Labs/Holmdel//Nj/07733 N4-Wave Mixing in Semi-Insulating InP and GaAs Using the PhotorE+1243230F;1?HBryant, G. W. x=vTLMcdonnell Douglas Corp,Mcdonnell Douglas Res Labs,Pob 516/St Louis//Mo/63166Lx=vTFExciFtons in Quantum Boxes: Correlation-Effects and Quantum ConfinementFx=vT03.5.3x=vT "Physical Review B-Condensed Matter"  (Journal of Physics C-Solid State Physics(=Pp0~N~\tG;@R Babiker, M.  =Pp0 5Univ Essex,Dept Phys/Colchester Co4 3sq/Essex/England5=Pp0 ?Longitudinal Polar Optical MoGdes in Semiconductor Quantum-Wells?=Pp0 03.2.1=Pp0  (Journal of Physics C-Solid State Physics(=Pp0G  Article$M_'t)@_l)81986$M_'t)@_l)819$M_'t)@_l)85$M_'t)@_l)8683-6G97$M_'t)@_l)8%>\\As01mesant\Procite Databases\WCS\Articles/Babiker M 1986.pdf>$M_'t)@_l)8*GA continuum theory is employed for investigatingG the longitudinal optical (LO) modes in polar semiconductor heterostructures. Particular emphasis is laid on the symmetric double heterostructure (DHS) such as occurs in a semiconductor quantum well. GThe existence of two-dimensional (2D) bulk-type double-interface-type and guided-type LO modes is examined for this case and their characteristic dispersion relations derived. It is shown with referenHS>t=?Yonenaga, I//Sumino Kxk=s xk=s XImpurity Effects on the Generation, Velocity, and Immobilization of DislocatioHns in GaAsxk=s Wxk=s 07.1.6=s  Journal of Applied Physics=s H1989:$M_D=4?@_,?:65:$M_D=4?@_,?:1:$M_D=4?@_,?:85-92:$M_D=4?@_,?:%=\\Aeron$M_D=4?@_,?:1:$M_D=4?@_,?:85-92:$M_D=4?@_,?:%=\\Aeron^N~l|Gce to a typical GaAs quantum well that the presence of at most two double-interface modes and a finite number of guided LO modes depends on the difference between the squares of the limiting bulk LO fGrequencies of the two materials. The implications of the results for light scattering experiments and for the properties of electrons confined in quantum wells are pointed out and discussed FG~arialM_'t)@_l)8 rialM_'t)@_l)8+155rialM_'t)@_l)852050HS>@Yonenaga, I//Sumino Kxk=s xk=s XImpurity Effects on the Generation, Velocity, and Immobilization of DislocatioHns in GaAsxk=s Wxk=s 07.1.6=s  Journal of Applied Physics=s H1989:$M_D=4?@_,?:65:$M_D=4?@_,?:1:$M_D=4?@_,?:85-92:$M_D=4?@_,?:%B\\As01mHesant\Procite Databases\WCS\Articles\Yonenaga I 1989 01.pdfB:$M_D=4?@_,?:' 0021-8979 :$M_D=4?@_,?:)\English Tohoku, Inst Mat Res, Sendal, Miyagi 9H80, Japan, R4706 Copyright 2003 SciSearch Plus xk=s xk=s xk=s xk=s H xk=s xk=s  xk=s xk=s xk=s %I;1? DBrunner, K. //Abstreiter, G. //Bohm, G. //Trankle, G. //Weimann, G. D<= osB-Tech Univ Munich,Walter Schottky Inst/D-85748-<=Dt4t,H xk=s xk=s  xk=s xk=s xk=s %HTxk=s +84:$M_D=4?@_,?:64540I;@ DBrunner, K. //Abstreiter, G. //Bohm, G. //Trankle, G. //Weimann, G. D<= osB-Tech Univ Munich,Walter Schottky Inst/D-85748-<=I osBnSharp-Line Photoluminescence and 2-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structuren<= osB03.5.3)I= osB Physical Review Letters<= osB Articlem$M_|vlx@_dxx}|m Aug 22, 1994 m$M_|vlx@_dxx}|m73Im$M_|vlx@_dxx}|m8m$M_|vlx@_dxx}|m 1138-1141 m$M_|vlx@_dxx}|m%A\\As01mesant\Procite Databases\WCS\Articles\Brunner K 1994 08.pdfI,m$M_|vlx@_dxx}|mm$M_|vlx@_dxx}|m*Using a micron-sized photoluminescence (PL) probe enables us to study single islandlike interface defects of a thin GaAIs/AlGaAs quantum well. The bound exciton ground state locally emits a distinct sharp line. With increasing excitation of this quantum dot level additional transition lines emerge at lower energy. TheyI are attributed to localized biexciton states. The biexciton correlation energy is about 4 meV. A distinct two-photon resonant absorption peak of the biexciton ground state is observed in PL excitatioJp<Ү1?('Karpinski, J. //Jun, J. //Porowski, S. '(=Vt;High Pressure Res Ctr Unipress,Sokolowska 29/Warsaw//Poland;(=Vt==h=wv PhysiJz :,K;@*bBrunner, K. //Bockelmann, U. //Abstreiter, G. //Walther, M. //Bohm, G. //Trankle, G.//Weimann, G. b==h=wv,Tech Univ Munich,Walter Schottky Inst/WK-8046,==h=wv7Photoluminescence From a Single GaAs/AlGaAs Quantum Dot7==h=wv03.5.5==h=wv PhysiKcal Review Letters==h=wv Article$M_@_ Nov 30, 1992 $M_@_69$M_@_K22$M_@_ 3216-3219 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles\Brunner K 1992 11.pdf,$M_K@_$M_@_*Isolated single quantum dots of different size have been fabricated by laser-induced local interdiffusion of a GaAs/AlGaAs quantum-well structurKe. Microscopic photoluminescence (PL) reveals a splitting and a blueshift, which depend systematically on dot size. The distinct PL peaks separated in energy by up to 10 meV are attributed to recombinL[l41984 October 154$M_l=\?@_T?>[l4304$M_l=\?@_T?>[l484$M_l=\?@_T?>[l4 4481-4492 4$M_l=\?@_TL?>[l4324$M_l=\?@_T?>[l4%?\\As01mesant\Procite Databases\WCS\Articles\Chand N 1984 10.pdf?4$M_l=\?@_T?>[l4+3144$M_l=\?@_T?L>[l460580M Index-Guided Diode-Lasers;= t:10.3.3= t: Applied Physics Letters= t: ArticleM Index-Guided Diode-Lasers;= t:10.3.3= t: Applied Physics Letters= t: Article>$T,N  @_ T216$M_  @_ T1-2$M_  @_ T222-248$M_  @_ T%<\\As01mesant\Procite Databases\WCNS\Articles/Cohen E 1989.pdf,$M_  @_ T$M_  @_ T+133$M_  @_ T890Oh.=@h=1?)Singh, J. //Bajaj, K. K. //Chaudhuri, S. )HL-=0nV Universal Energy Syst Inc/Dayton//Oh/45432 ; Usaf,Wright Aeronaut Labs,Aadr,Avion Lab/Wright PatRterson ; Wright State Univ,Univ Res Ctr/Dayton//Oh/45435HL-=0nV \Theory of Photoluminescence Line-Shape Due to Interfacial Quality in Quantum Well Structures\RHL-=0nV 03.1.2HL-=0nV  Applied Physics LettersHL-=0nV  Article$M_l\@_T0 lR1984$M_l\@_T0 l44$M_l\@_T0 l8$M_l\@_T0 l805-807$M_l\@_T0 l%:\\Aeron\ProcitT0 l805-807$M_l\@_T0 l%:\\Aeron\Procit^N~eSociated with the absorption of polar optical phonons, on the other hand, proves to be proportional to L. These properties are shown to lead to a negative differential resistance for pure polar mode scSattering, and to the existence of a runaway field for deformation-potential scattering. The self-energy associated with the emission of polar optical phonons at absolute zero is shown to be divergent S unless the polar interaction is screened, and some consequences of this for laser and other optical processes are pointed out. The description of scattering by perturbation theory breaks down in very S narrow wells arial@_TD@_< T rial@_TD@_< T+284rial@_TD@_< T52080T==1?Chai, Bruce H.T.HFOptical CrystalsHF00.0HFHFTinHFWeber, Marvin J.HFEd.HF,CRC Handbook of Laser ScienTce and Technology,HF Boca Raton HF  CRC Press HF 1995HF =X@tV#357270=X@tV# US3590248 =X@tV#US=X@tV# 6/29/1971 U=X@tV# US3590248 =X@tV#wUS3187627 US3289101 US3391281 US1780364 US2967910 US3043179 US3248669 US3284722 US3290539 US3294903 US3310681 US3349174%U~2 -S;@pRidley, B. K. 8=n$ |5Univ Essex,Dept Phys/Colchester Co4 3sq/Essex/England58=n$ |\The Electron Phonon InteracStion in Quasi-2-Dimensional Semiconductor Quantum-Well Structures\8=n$ |03.2.18=n$ | (Journal of Physics C-Solid State PhysicsS(8=n$ | Article@_TD@_< T1982@_TD@_< T15@_TD@_< T28@S_TD@_< T 5899-5917 @_TD@_< T%>\\As01mesant\Procite Databases\WCS\Articles/Ridley BK 1982.pdf>=n$ |*Approximate anSalytic expressions are obtained for the scattering rates and momentum-relaxation rates of an electron in a quasi-two-dimensional quantum well interacting with acoustic, optical and intervalley modes vSia the deformation potential and with longitudinal optical modes via the polar interaction. These analytic expressions are obtained using a momentum-conservation approximation. The threshold for opticSal phonon emission, unlike the case in the bulk, is abrupt. All scattering rates are energy-independent and are inversely proportional to L, the thickness of the well. The momentum-relaxation rate assTinHFWeber, Marvin J.HFEd.HF,CRC Handbook of Laser ScienTce and Technology,HF Boca Raton HF  CRC Press HF 1995HF 91281 US1780364 US2967910 US3043179 US3248669 US3284722 US3290539 US3294903 US3310681 US3349174^N~T!Supplement II: Optical Materials!HF %NoneHF 64240U<@ Chatterton, Jr.//Edward J.=X@tV# Laser Arrays=X@tV# =X@tV#12.5.4U=X@tV#357270=X@tV# US3590248 =X@tV#US=X@tV# 6/29/1971 U=X@tV# US3590248 =X@tV#wUS3187627 US3289101 US3391281 US1780364 US2967910 US3043179 US3248669 US3284722 US3290539 US3294903 US3310681 US3349174Uw=X@tV#"US3691390 US3691483 US3838278 US3845293 US3849604 US3892468 US4062043 US4229103 US5734672 US5898211 US6144684 US6272164 US3715685 US3751166 US3953727 US399U1318 US4454602 US4625305 US5013151 US5319528 US5325384 US5394492 US5463534 US5513195 US5521931 US5586132 US5913108 US5923359 US6310900 US3819249 US3832028 US3897135 US3901578 US4232385 US4367554 US477U0482 US4932747 US5625403 US5729568 US5985684 USRE29094=X@tV#%;\\As01mesant\Procite Databases\WCS\Patents\US03590248__.pdf;=X@tV#'HUd04B 9/0=X@tV#+41=X@tV#10Vnd at GaAs/AlGaAs Heterojunctions and Quantum Wells==uj02.3.1=uj (Journal of the Physical Society of Japan(Vnd at GaAs/AlGaAs Heterojunctions and Quantum Wells==uj02.3.1=uj (Journal of the Physical Society of Japan(=o=oq US3611069 =oEu-V;@ Ando, T.  =ujKUniv Tokyo,Inst Solid State Phys,7-22-1 Roppongi,Minato Ku/Tokyo 106//JapanK=uj=Hole SubbaVnd at GaAs/AlGaAs Heterojunctions and Quantum Wells==uj02.3.1=uj (Journal of the Physical Society of Japan(V=uj Article$M_<,@_$<1985$M_<,@_$<54$M_<,@_$<4$M_<,@_$V< 1528-1536 $M_<,@_$<%>\\As01mesant\Procite Databases\WCS\Articles/Ando T 1984 12.pdf>$M_<,@_$<+117$M_<,@V_$<52150W<@6Galginaitis, Simeon V.//Fenner, G. E.//Ehle, Rogers S.!=oq=oq=oqMultiplWe Color Emitting Diodes=oq11.1.1=oq218550=oq US3611069 =oX;u=?bFritz, I. J. //Picraux, S. T. //Dawson, L. R. //Drummond, T. J. //Laidig, W. D. //Anderson, N. G. b/=(vDԫPSandia Natl Labs/Albuquerque//Nm/87185 X; N Carolina State Univ,Dept Elect & CompP/=(vDԫaDependence of Critical Layer Thickness on Strain for InxGa1-xAs/GaAs Strained-Layer Superlatticesa/X=(vDԫ07.2.2/=(vDԫ Applied Physics Letters/=(vDԫ Articles$M_d|T~@_L~ds 1985 May 15} =mN~T--W=oq' H01L 15/0 =oq+31=oq30X;@bFritz, I. J. //Picraux, S. T. //Dawson, L. R. //Drummond, T. J. //Laidig, W. D. //Anderson, N. G. b/=(vDԫPSandia Natl Labs/Albuquerque//Nm/87185 X; N Carolina State Univ,Dept Elect & CompP/=(vDԫaDependence of Critical Layer Thickness on Strain for InxGa1-xAs/GaAs Strained-Layer Superlatticesa/X=(vDԫ07.2.2/=(vDԫ Applied Physics Letters/=(vDԫ Articles$M_d|T~@_L~ds 1985 May 15X M=(vDԫ46s$M_d|T~@_L~ds10s$M_d|T~@_L~ds967-969s$M_d|T~@_L~ds%@\\As01mesant\ProcXite Databases\WCS\Articles\Fritz IJ 1985 05.pdf,XhH9XXXFXM=(vDԫ+168s$M_d|T~@_L~ds960Yons&=SoF4 Article7$M_@B@_AP4719837$M_@B@_AP47457$M_@B@_AP4797Yons&=SoF4 Article7$M_@B@_AP4719837$M_@B@_AP47457$M_@B@_AP4797Yons&=SoF4 Article7$M_@B@_AP4719837$M_@B@_AP47457$M_@B@_AP4797 Article$M_@_&198$M_@_&198N>nBr -Z7$M_@_&141$M_@_&1$M_@_&129-150$M_@_&%>\\As01mesant\ProZcite Databases\WCS\Articles/Wendler L 1987.pdf,$M_@_&$M_@_&+108$M_@_&52160[,(<@Thomas, D.J.//Hopfield, J.J.a=(oK<#Isoelectronic Traps Due to N in GaP#a=(oK<01.4.4 Excitonsa[=(oK< Physical Reviewa=(oK<1966 10$M_l\@_T6K150$M_l\@_T6K680-689[$M_l\@_T6K$M_l\@_T6K%A\\As01mesant\Procite Databases\WCS\Articles/Thomas DG 1966 10.pdfA$M_l\@_T6K61660\Q=1?00.1HFTufte, Edward R.HF.The Visual Display of Quantitative Information.HF\Cheshire, ConnecticutHF Graphics PressHF 1983HF %NoneH\F )From Edward Tufte's course in July 28, 2003. Basically, the power of visual representations (beyond what text can do) is to show quantitative relationships between thin\gs, whether in space, time, cause/effect, or any other quantitative dimension. In a way, it's the same thing that mathematical equations do (again beyond what text can do). Rules for good presentatio<l;k$-\ns: 1 Be early, 2 At beginning Problem Relevance Solution, 3 Particular-General-Particular, 4 Leave a piece of paper, 5 Don't present as if your audience is stupid, 7 Respect your audience, 8 Use hum\our wisely, 10 Be appropriately expressive, 11 Finish early. Bell Centennial Font great for high-density numbers Content should drive Form, not the other way aroundHF \64250]%| =@V4Miyazawa, S. //Ishii, Y. //Ishida, S. //Nanishi, Y. 41-=sܫ4Nippon Telegraph & Tel Publ Corp,Atsugi Elect Commun41-=s]ܫYDirect Observation of Dislocation Effects on Threshold of a GaAs Field-Effect TransistorY1-=sܫ09.1.11-=sܫ Applied P]hysics Letters1-=sܫ ArticleYI$M_ bIcI@_cI YI1983YI$M_ bIcI@_cI YI43YI$M_ bIcI@_cI YI9]YI$M_ bIcI@_cI YI853-855YI$M_ bIcI@_cI YI%B\\As01mesant\Procite Databases\WCS\Articles/Miyazawa S 1983 11.pdfBYI$M_ bIcI@_cI YI]8+123YI$M_ bIcI@_cI YI22170^unications=r Articleh$M_|qls@_ds6 |h1978h$M_|qls@_ds6 |h26h$M_|qls@_ds6 |h8^unications=r Articleh$M_|qls@_ds6 |h1978h$M_|qls@_ds6 |h26h$M_|qls@_ds6 |h8^unications=r Articleh$M_|qls@_ds6 |h1978h$M_|qls@_ds6 |h26h$M_|qls@_ds6 |h8E5e $-_ Inst Nachrichtentech Berlin Gmbh/D-1000 ; Forschungsinst Deutschen Bundespost,FernmeldetechH=(tfTLocalization Induced Electron-Hole Transition Rate Enhancement i_n GaAs Quantum WellsTH=(tf03.3.1H=(tf Applied Physics LettersH=(tf Article!$_M_!!@_!R!1984!$M_!!@_!R!44!$M_!!@_!R!1!$M_!!@_!R!84-86!$M_!!@__!R!%B\\As01mesant\Procite Databases\WCS\Articles/Christen J 1983 01.PDFB!$M_!!@_!R!+108!$M_!!@_!R!4460`\| =@ ATiong, K. K. //Amirtharaj, P. M. //Pollak, F. H. //Aspnes, D. E. AU-=s ܫYCuny Brooklyn Coll,Dept Phys/Brooklyn//Ny/11210 ; Bell Tel Labs Inc/Murr`ay Hill//Nj/07974YU-=s ܫ[Effects of as+ Ion-Implantation on the Raman-Spectra of Spatial Correlation Interpretation[U-=s ܫ05.1.3`U-=s ܫ Applied Physics LettersU-=s ܫ Article I$M_ )I*I@_*I I1984 I$M_ )I*I@_*I ` I44 I$M_ )I*I@_*I I1 I$M_ )I*I@_*I I122-124 I$M_ )I*I@_*I I%@\\As01mesant\Procite Databases\WCS\Articles/Tiong KK 19`i84 01.pdf@ I$M_ )I*I@_*I I+202 I$M_ )I*I@_*I I3850ah.=[?Aoki, H. //Ando, T. S=sBYUniv Tokyo,Dept Phys/Tokyo 113//Japan ; Univ Tokyo,Inst Solid State Phys/Tokyo 106//JapanYS=st4~ ah.=@Aoki, H. //Ando, T. S=sBYUniv Tokyo,Dept Phys/Tokyo 113//Japan ; Univ Tokyo,Inst Solid State Phys/Tokyo 106//JapanYS=saB:Critical Localization in 2-Dimensional Landau Quantization:S=sB02.5.2`R=sB Physical Review LettersaS=sB Article$M_\L@_DT\ 1985 Feb 25 $M_\L@_DT\54$M_\L@_DT\8$M_\aL@_DT\831-834$M_\L@_DT\%>\\As01mesant\Procite Databases\WCS\Articles\Aoki H 1985 02.pdf>$M_\L@_DT\+128$M_\aL@_DT\530b;@`&Kishino, K. //Aoki, S. //Suematsu, Y. &8=0w4Tokyo Inst Technol,Dept Phys Electr/Tokyo 152//Japan48=0wnWaveblength Variation of 1.6 Mu-M Wavelength Buried Heterostructure GaInAsp InP Lasers Due to Direct Modulationn8=0w10.5.18=0w #IEbEE Journal of Quantum Electronics#8=0w Articley$M_L<@_4 Ly1982y$M_L<@_4 Ly18y$M_L<b@_4 Ly3y$M_L<@_4 Ly343-351y$M_L<@_4 Ly%A\\As01mesant\Procite Databases\WCS\Articles/Kishino K 1982 03.pdfAy$M_L\\As01mesant\Procite Databases\WCS\Articles\Ledentsov 1996.pdf>$M_ @_`h*1Elastic relaxation on facet edges, renormalization of the surface energy of the facets, and interaction between islands via the strained substrate are the driving forces for self-organization hof ordered arrays of uniform coherent three-dimensional islands on crystal surfaces. For a (100) surface of a cubic crystal, two-dimensional square lattice of pyramid-like islands (quantum dots) with hthe periodicity along the directions of the lowest stiffness [010] and [001] has the minimum energy among different one-dimensional and two-dimensional arrays. For the InAs/GaAs(100) system, an equilih brium array of dots of the lateral size similar to 120-140 Angstrom exists in a fixed range of growth parameters. The main luminescence peak at 1.1 eV, as well as peaks of excited states coincide bl eh nergy with the peaks revealed in the calorimetric absorption spectra regardless of the amount of InAs deposited (2-5 ML). Raman spectra indicate significant strain in InAs dots. The ''phonon bottleneci;.u=?ALedentsov, N. N. //Shchukin, V. A. //Grundmann, M. //Kirstaedter, N. //Bohrer, J. //Schmidt, O. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Za^N~: g;@,Dahmani, B. //Hollberg, L. //Drullinger, R. ,=rPHNbs/Boulder//Co/80303=rPHLFrequency Stabilization of Segmiconductor-Lasers by Resonant Optical FeedbackL=rPH10.4.1=rPH Optics Letters=rPH Artigcler$M_l{\}@_T}Hlr1987r$M_l{\}@_T}Hlr12r$M_l{\}@_T}Hlr11r$M_l{\}@_T}Hlr876-878gr$M_l{\}@_T}Hlr%>\\As01mesant\Procite Databases\WCS\Articles/Dahmani B 1987.pdf>=rPH+200r$M_l{\}@_T}Hlr52190h;@'Ledentsov, N. N. //Grundmann, M. //Kirstaedter, N. //Schmidt, O. //Heitz, R. //Bohrer, J. //Bimberg, D. //Ustinov, V. M. //Shchukin, V. A. //Egorov, A. Y. //Zhukov, A. E. //Zaitshev, S. //Kopev, P. S. //Alferov, Z. I. //Ruvimov, S. S. //Kosogov, A. O. //Werner, P. //Gosele, U. //Heydenreich, J. '!=X|vhTech Univ Berlin,Inst Festkorperphys,Harhdenbergstr 36,D- ; Af Ioffe Phys Tech Inst,St Petersburg 194021,Russia ; Max Planck Inst Mikrostrukturphys,D-06120 Halle,Germany!=X|vh[Ordered Arrays of Quantum Doths: Formation, Electronic Spectra, Relaxation Phenomena, Lasing[!=X|vh10.2.3P"=X|vhP"=X|vh Solid-Sti;.u=?ALedentsov, N. N. //Shchukin, V. A. //Grundmann, M. //Kirstaedter, N. //Bohrer, J. //Schmidt, O. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Za4 1996 SEP 15 $M_4$@_E4E4VF~,-4-i;@ALedentsov, N. N. //Shchukin, V. A. //Grundmann, M. //Kirstaedter, N. //Bohrer, J. //Schmidt, O. //Bimberg, D. //Ustinov, V. M. //Egorov, A. Y. //Zhukov, A. E. //Kopev, P. S. //Zaiitsev, S. V. //Gordeev, N. Y. //Alferov, Z. I. //Borovkov, A. I. //Kosogov, A. O. //Ruvimov, S. S. //Werner, P. //Gosele, U. //Heydenreich, J. A e=s.Tech Univ Berliin,Inst Festkorperphys,Hardenbergstr 36,D- ; Af Ioffe Phys Tech Inst,St Petersburg 194021,Russia ; Tech Univ St Petersburg,St Petersburg 195251,Russia ; Max Planck Inst Mikrostrukturphys,D-06120 Hallei,Germany e=s.PDirect Formation of Vertically Coupled Quantum Dots in Stranski-Krastanow GrowthP e=s.07.4.3vi=s. "Physical Review B-Condensed Matter" e=s. Article$M_4$@_E4 1996 SEP 15 $M_4$@_E4i54$M_4$@_E412$M_4$@_E4 8743-8750 $M_4$@_E4%A\\As01mesant\Procite Databases\WCS\Articles\Ledentsov i1996 09.pdfA$M_4$@_E4*xAlternate short-period GaAs-InAs deposition following InAs pyramid formation on a GaAs (100) surface leads to the creation of vertically split pj R=&1?00.1HFTufte, Edward R.HFEnvisioning InformationHFCheshirej, ConnecticutHF Graphics PressHF 1990HF %NoneHF j64260u^N~ 4-,k;@Mori, S. //Ando, T. %=Juf 0hUniv Tokyo,Dept Phys,Bunkyo Ku/Tokyo 113//Japan ; Univ Tsukuba,Inst Appl Phys/Sakura/Ibaraki 30031/Japanhk%=Juf 0oElectronic-Properties of a Semiconductor Super-Lattice .2. Low-Temperature Mobility Perpendicular to the Super-o%=Juf 004.3.1k%=Juf 0 (Journal of the Physical Society of Japan(%=Juf 0 ArticleN$M_NN@_N N1980 02N$M_NNk@_N N48N$M_NN@_N N3N$M_NN@_N N865-873N$M_NN@_N N%;\\As01mesant\Procite Databases\WCS\Articles/Mknori S 1980.pdf;N$M_NN@_N N+159N$M_NN@_N N1310lp<@@ 2Amano, H. //Sawaki, N. //Akasaki, I. //Toyoda, Y. 2Pn=kulNagoya Univ,Sch Engn,Dept Electr/Nagoya/Aichi 464/Japan ; Matsushita Elect Ind Co Ltd,Klawasaki Lab,Tama Ku/Kawasaki/Kanagawa 214/JapanPn=kul^Metalorganic Vapor-Phase Epitaxial-Growth of a High-Quality GaN Film Using an AlN Buffer Layer^Pnl=kul07.5.3Pn=kul Applied Physics LettersPn=kul Article$M_@_ 1986 Febl 3$M_@_$M_@_ 48$M_@_5$M_@_353-355$M_m;1?PDNorris, T. //Rhee, J. K. //Sung, C. Y. //Arakawa, Y. //Nishioka, M. D6=n0Univ Michigan,Ctr Ultrafast Opt Sci,2200 Bonisteel Blvd/Ann ; Univ T4dN~x$4l@_%<\\As01mesant\Procite Databases\WCS\Articles/Amano H 1986.pdf<$M_@_+538$M_@_2880m;@PDNorris, T. //Rhee, J. K. //Sung, C. Y. //Arakawa, Y. //Nishioka, M. D6=n0Univ Michigan,Ctr Ultrafast Opt Sci,2200 Bonisteel Blvd/Ann ; Univ Tmokyo,Inst Ind Sci,Minato Ku/Tokyo 153//Japan ; Thomson Csf,Cent Rech Lab/F-91404 Orsay//France6=n0MTime-Resolved Vacuum Rabi Oscillations in a Semiconductor Quantmum MicrocavityM6=n005.2.36=n0 "Physical Review B-Condensed Matter"6=n0 Articlem$M_l\@_T6,l 1994 Nov 15 $M_l\@_T6,l50$M_l\@_T6,l19$M_l\@_T6,l 14663-14666 m$M_l\@_T6,l%A\\As01mesant\Procite Databases\WCS\Articles\Norris TB 1994 11.pdf,$M_l\@_T6,l$M_l\@_T6,l+104$M_lm\@_T6,l,NSpontaneous-Emission/ Wells/ Scattering/ Linewidth/ Cavity/ States/ Atoms/ GapN$M_l\@_T6,l1360nD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsnD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsnD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsHx 9i,<no;@VKirstaedter, N. //Ledentsov, N. N. //Grundmann, M. //Bimberg, D. //Ruvimov, S. S. //Maximov, M. V. //Kopev, P. S. //Alferov, Z. I. //Richter, U. //Werner, P. //Gosele, U. //Heydenrneich, J. =u(Tech Univ Berlin,Inst Festkorperphys,Hardenbergstr 36/D- ; Af Ioffe Phys Tech Inst/St Petersburg 194021//Russia ; Max Planck Inst Mikrostrukturphys/nD-06120 Halle//Germany ; Lab Elektronenmikroskopie Nat Wissensch & Med/D-06120=u(LLow-Threshold, Large T-O Injection-Laser Emission From (Inga)as Quantum DotsnL=u(10.2.3=u( Electronics Letters=u( Articleu$M_l~\@_Tlun Aug 18, 1994 u$M_l~\@_Tlu30u$M_l~\@_Tlu17u$M_l~\@_Tlu 1416-1417 u$M_l~\@_Tlu%E\\oh.=1?HAkasaki, I. //Sota, S. //Sakai, H. //Tanaka, T. //Koike, M. //Amano, H. H+=u(Meijo Univ,Dept Elect & Electr Engn,Tempaku Ku,1-501 ; Pioneer Eolect Corp,Tsuruga,Saitama 35002,Japan ; Toyoda Gosei Co Ltd,Haruhi,Aichi 452,Japan+=u(-Shortest Wavelength Semiconductor Laser Diode-+=u(o10.1.2+=u(+=u(+=u( Electronics Letters+=u( oArticleu$M_l~\@_T lu Jun 6, 1996 u$M_l~\@_T lu32u$M_l~\@_T lu12u$M_l~\@_T lu 1105-1^N~24<-nAs01mesant\Procite Databases\WCS\Articles\Kirstaedter N 1994 08.pdfEu$M_l~\@_Tlu*Low threshold, large T-o injection laser emission via zero-dimensional states in (InGa)Ans quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.nu$M_l~\@_Tlu+285u$M_l~\@_Tlu,DSemiconductor Junction Lasers/ Semiconductor Quantum Islands/ GrowthDu$M_l~\@_Tlu1110oh.=@HAkasaki, I. //Sota, S. //Sakai, H. //Tanaka, T. //Koike, M. //Amano, H. H+=u(Meijo Univ,Dept Elect & Electr Engn,Tempaku Ku,1-501 ; Pioneer Eolect Corp,Tsuruga,Saitama 35002,Japan ; Toyoda Gosei Co Ltd,Haruhi,Aichi 452,Japan+=u(-Shortest Wavelength Semiconductor Laser Diode-+=u(o10.1.2+=u(+=u(+=u( Electronics Letters+=u( oArticleu$M_l~\@_T lu Jun 6, 1996 u$M_l~\@_T lu32u$M_l~\@_T lu12u$M_l~\@_T lu 1105-1o106 u$M_l~\@_T lu%B\\As01mesant\Procite Databases\WCS\Articles/Akasaki I 1996 006.pdfBu$M_l~\@_T lu*9A group III, nitride based, separate confinp;g1?COudar, J. L. //Migus, A. //Hulin, D. //Grillon, G. //Etchepare, J. Cs=wgCtr Natl Etud Telecommun,Bagneux Lab/F-92220 ; Ecole Polytechn,Ecole p\h=w+103$M_L<@_4 zL1450^N~LL-r,20$M_,@_<, 14766-14769 $M_,@_<,%A\\As01mesant\Procite Databases\WCS\Articles\Ruvimov S 1995 05.pdfA$M_,@_r<,+125$M_,@_<,,8Growth/ Superlattices/ Surfaces/ Islands/ Ingaas/ Strain8$M_,@_<,1580s;@J1Schlesinger, Z. //Hwang, J. C. M. //Allen, S. J. 1=Hxԫ'Bell Tel Labs Inc/Murray Hill//Nj/07974'=Hxԫ2Subbansd-Landau-Level Coupling in a Two-Dimensional2=Hxԫ02.5.1=Hxԫ Physical Review Letters=Hxԫs Article$M_@_l 1983 Jun 27X(=HxԫX(=Hxԫ50$M_@_l26s$M_@_l 2098-2101 $M_@_l%E\\As01mesant\Procite Databases\WCS\Articles\Schlesinger Z 1983 06.pdf,@/hH9XsXFs sX(=HxԫX(=Hxԫ+109$M_@_l1610t~o>g1?NPaul, W.=@qp<LBand Structure of the Intermetallic Semiconductors from Pressure ExperimentsL=@qp<01.3.3 Eleabases\WCS\Articles\Paul W 1961 10.pdf9$M_t@_lXt~64590u܊(=1?x Hayashi, Izuo 0*=(Wu &Doudble Heterostructure Juncion Lasers0*=(Wu %0*=(Wu 10.1.T#S,\D-Dq$M_,@_J, 2433-2436 $M_,@_J,%G\\As01mesant\Procite Databases\WCS\Articles\Peyghambarian N 1984 12.pdfG$M_,@_J,+1q412$M_,@_J,1510r;@,Ruvimov, S.S. //Werner, P. //Scheerschmidt, K. //Gosele, U. //Richter, U. //Ledentsov, N. N. //Grundmann, M. //Bimberg, D. //Ustinov, V. M.//Egorov, A. Y.//Kopev, P. S. //Alferov, rZ. I.  5=ptw5=ptw5=ptwMax Planck Mikrostrukturphys,Weinberg 2/D-06120 ; Lab Elektronenmikroskopire Nat Wissensch & Med/D-06120 ; Tech Univ Berlin,Inst Festkorperphys/D-10623 Berlin//Germany ; Af Ioffe Phys Tech Inst/St Petersburg 194021//Russia5=ptwFStructurarl Characterization of (In,Ga)As Quantum Dots in a GaAs Matrix 5=ptw5=ptw5=ptw5=rptw5=ptw5=ptw5=ptw07.4.25=ptw "Physical Review B-Crondensed Matter"5=ptw Article$M_,@_<, 1995 May 15 $M_,@_<,51$M_,@_Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Pero~t Cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experi<1?LMendez, E. E.//Bastard, G.//Chang, L. L.//Esaki, L.//Morkoc, H.//Fischer, R.L [=8lq XIBM Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Univ Illinois/Urbana//Il/61801L=8lq L=8lq UL=8lq EEffect of an Electric-Field on the Luminescence of GaAs Quantum WellsE [=8lq 03.3.2 [=8lq  "Physical Review B-Condensed Matter" [=8lq  ArticleM|wDensity-Matrix Theory of ^N~\-~mentally found to decrease.>$M_l@_p+115$M_l@_p,Lasers$M_l@_p2020<@LMendez, E. E.//Bastard, G.//Chang, L. L.//Esaki, L.//Morkoc, H.//Fischer, R.L [=8lq XIBM Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Univ Illinois/Urbana//Il/61801L=8lq L=8lq UL=8lq EEffect of an Electric-Field on the Luminescence of GaAs Quantum WellsE [=8lq 03.3.2 [=8lq  "Physical Review B-Condensed Matter" [=8lq  ArticleP$M_lYT@_L+lP 1982 Dec 15 P$M_lYT@_L+lP26P$M_lYT@_L+lP12P$M_lYT@_L+lP 7101-7104 P$M_lYT@_L+lP10P$M_lYT@_L+lP%A\\As01mesant\Procite Databases\WCS\Articles\Mendez EE 1982 12.pdfAP$M_lYT@_L+lP+229P$%M_lYT@_L+lP60610f Quantum Electronics#=HwM| Article?@_lH\J@_TJTHl?1985?@_lH\J@_TJTHl?21?@_lH\J@_TJTHf Quantum Electronics#=HwM| Article?@_lH\J@_TJTHl?1985?@_lH\J@_TJTHl?21?@_lH\J@_TJTHf Quantum Electronics#=HwM| Article?@_lH\J@_TJTHl?1985?@_lH\J@_TJTHl?21?@_lH\J@_TJTH$M_ _"H1987$M_ 1987$M_ o2b\-"@_"H5$M_ "@_"H1$M_ "@_"H16-23$M_ "@_"H%?\\As01mesant\Procite Databases\WCS\Articlevs/Haus HA 1987 01.pdf?@=Dqf+125$M_ "@_"H19740;@BZrenner, A. //Butov, L. V. //Hagn, M. //Abstreiter, G. //Bohm, G. B=rz^Tech Univ Munich,Walter Schottky Inst/D-85748 ; Russian Acad Sci,Inst Solid State Phys/142432^=rzQQuantum Dots Formed by Interface Fluctuations in Coupled-Quantum-Well StructuresQ=rz03.5.1=rz=rz Physical Review Letters=rz Article$M_$\@_Tvj May 23, 1994 $M_$\@_Tvj72$M_$\@_Tvj21$M_$\@_Tvj 3382-3385 $M_$\@_Tvj%A\\As01mesant\Procite Databases\WCS\Articles\Zrenner A 1994 05.pdfA$M_$\@_Tvj*We report about optical experiments on electric field tunable AlAs/GaAs coupled quantum well structu;1?  Asbeck, P.M. 0= r0= r'Philips Labs/Briarcliff Manor//Ny/10510'0= rTSelf-Absorption Effects on Radiative Lifetime in GaAs-GaAlAs Double HeterostructuresT0= r03.3.10= r0= r Journal of Applied Physics0= r Articles$M_4|$~@_~4s1977s$M_4|$~@_~4s48s$M_4|$~ <l,\dd-res in the regime of the electric field induced GAMMA-X transition. Using the energetically tunable X-point state in the AlAs layer as an internal energy spectrometer and charge reservoir we are able to map out the electronic states in the neighboring GaAs quantum well in great detail. In spatially resolved and bias voltage dependent photoluminescence experiments we find sets of extremely narrow emission lines below the fundamental band gap energy of the GaAs quantum well. The new emission lines are shown to originate from natural quantum dots which are formed by well width fluctuations of the GaAs quantum well.$M_$\@_Tvj+158$M_$\@_Tvj,dSemiconductor Interfaces/ Photoluminescence/ Islands/ Gaas/Alxga1-X/ Superlattices/ Excitons :/ Growthd$M_$\@_Tvj2050C~4s+106s$M_4|$~@_~4s2060-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_@_~4s2s$M_4|$~@_~4s820-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_@_~4s2s$M_4|$~@_~4s820-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_@_~4s2s$M_4|$~@_~4s820-822s$M_4|$~@_~4s%9\\Aeron\Procite Databases\WCS\Articles/Asbeck PM 1977.pdf9s$M_4|$~@_US5717247 US5736456 US5825092 US5828134 US6013948 US6098278 US6271598 US6300670 US6326689 US6355976 US3796927 US3798513 US3885196 US3959579 US3982268 US4074342 US4104674 US4188709 US4263341 US4275410 US43793078 US4074342 US4104674 US4188709 US4263341 US4275410 US43793070N~lt-echnical Disclosure Bulletin Vol. 14, No. 1, June 1971, page 295-296. Article by S. Oktay et al. Electronics, February 17, 1969 pages 64-65.{=s "+US3851379 US3857169 US4126932 US4141135 US4187513 US4276098 US5144413 US5166769 US3864819 US3878008 US3896473 US3903592 US4740477 US4748483 US5653891 US5661091 US3913215 US3929531 US3973320 US3986142 US4283734 US4312115 US4904610 US4980315 US3816194 US3849217 US3930912 US3955270 US4033810 US4064620+{=s %;\\As01mesant\Procite Databases\WCS\Patents\US03689993__.pdf;{=s 'B01J 17/0; H01L 7/66{=s +30{=s 90} =@2PLarsen, P. K. //Neave, J. H. //Vanderveen, J. F. //Dobson, P. J. //Joyce, B. A. P8=p(̬Philips Res Labs,Pob 80000/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Univ London Imperial Coll Sci & Technol/London Sw78=p(̬*GaAs(001)-C (4x4): a Chemisorbed Structure*8=p(̬06.2.18=p(̬ "Physical Review B-Condensed Matter"8=܊(=Ү1?BSchwartz, Bertram//Spitzer, Stuart Marshall//Weigle, Gregory DyettB[~=Xut)\xMethod of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealingx[~=Xut)\08.1.2[~=Xut)\)Bell Telephone Laboratories, Incorporated)[~(4713030?$T~il- Letters=pZp Article$M_@_` 1986 Jun 23 $M_@_`56$M_@_`25$M_@_` 2748-2751 $M_@_`%D\\As01mesant\Procite Databases\WCS\Articles\Mysyrowicz A 1986 06.pdf,$M_@_c`$M_@_`+269$M_@_`1340<@ZTolar, Neal Jay{=s UFabrication of Semiconductor Devices Having Low Thermal Inpedance Bonds to Heat SinksU=s 08.4{=s 570160{=s  US3689993 {=s US{=s  9/12/1972 {=s  US3689993 {=s 1US2530110 US3061422 US3319135 US3508124 US36182021{=s IBM T} =1?2PLarsen, P. K. //Neave, J. H. //Vanderveen, J. F. //Dobson, P. J. //Joyce, B. A. P8=p(̬Philips Res Labs,Pob 80000/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; Fom,Inst Atom & Molec Phys/1098 Sj Amsterdam//Netherlands ; Univ London Imperial Coll Sci & Technol/London Sw78=p(̬*GaAs(001)-C (4x4): a Chemisorbed Structure*8=p(̬06.2.18=p(̬ "Physical Review B-Condensed Matter"8=p(̬ Article7$M_4@$B@_B(47 1983 Apr 15 +=p(̬277$M_4@$B@_B(4787$M_4@$B@_B)Yt-l.sub.2 O.sub.3 Films, in Journ. Electrochem. Soc., 1971, pp. 1619-1923."[~=Xut)\"US3982265 US4116722 US4145262 US4194927 US4216036 US4226667 US4226934 US4246296 US4256520 US4595423 US4634474 US4843450 US5021365 US5262360 US5373522 US5559058 US5567980 US5696023 US5736454 US5958519 US6039857[~=Xut)\%;\\As01mesant\Procite Databases\WCS\Patents\US03890169__.pdf;[~=Xut)\' H01I 7/44 [~=Xut)\+21[~=Xut)\62860;@*rAshoori, R. C. //Stormer, H. L. //Weiner, J. S. //Pfeiffer, L. N. //Pearton, S. J. //Baldwin, K. W. //West, K. W. r/=Ew(p$At&T Bell Labs/Murray Hill//Nj/07974$/=Ew(pDSingle-Electron Capacitance Spectroscopy of Discrete Quantum LevelsD/=Ew(p03.5.1/=Ew(p/=Ew(p Physical Review Letters/=Ew(p Article $M_@_|  May 18, 1992 $M_@_| 68 $M_@_| 20 $M_@_|  3088-3091 $M_@_| %B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1992 05.pdfB $M_@_| *UWe observe the capacitance signal resulting from single electrons tunneling into discrete quantum levels. The electrons tu;1?4Aspnes, D. E. @=0u/)Bell Commun Res Inc/Murray Hill//Nj/07974)@=0u/WAbove-Bandgap Optical Anisotropies in Cnal of Vacuum Science & Technology B(@}Eu5e@_| 68 $M_@_| 20 $M_@_|  3088-3091 $M_@_| %B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1992 05.pdfB $M_@_| *UWe observe the capacitance signal resulting from single electrons tunneling into discrete quantum levels. The electrons tunnel between a metallic layer and confined states of a single disk in a microscopic capacitor fabricated in GaAs. Charge transfer occurs only for bias voltages at which a quantum level resonates with the Fermi energy of the metallic layer. This creates a sequence of distinct capacitance peaks whose bias positions directly reflect the electronic spectrum of the confined structure. From the magnetic field evolution of the spectrum, we deduce the nature of the bound states.U $M_@_| +194 $M_@_| ,'Zeeman Bifurcation/ Dot Spectra/ Sta5tes' $M_@_| 2090=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_+[N~ =);@4Aspnes, D. E. @=0u/)Bell Commun Res Inc/Murray Hill//Nj/07974)@=0u/WAbove-Bandgap Optical Anisotropies in Cubic Visible Near Ultraviolet Probe of SurfacesW@=0u/06.1.2@=0u/ (Journal of Vacuum Science & Technology B(@=0u/ Articlee$M_no@_o<0e Sept 1985 e$M_no@_o<0e3e$M_no@_o<0e5e$M_no@_o<0e 1498-1506 e$M_no@_o<0e%A\\As01mesant\Procite Databases\WCS\Articles/Aspnes DE 1986 09.pdfAe$M_no@_o<0e+137e$M_no@_o<0e2100;@>Aspnes, D. E. =pq*'Bell Tel Labs Inc/Murray Hill//Nj/07974'=pq*6Recombination at Semiconductor Surfaces and Interfaces6=pq*02.3.2=pq* Surface Science=pq* Article"$M_+-@_|-,"1983"$M_+-@_|-,"132"$M_+-@_|-,"1-3"$M_+-@_|-,"406-421"$M_+-@_|-,"%?\\As01mesant\Procite Databases\WCS\Articles\Aspnes DE 1983.pdf ,:=pq*:=pq*+133"$M_+-@_|-,"2110i.=[?fMChen, W. //Fritze, M. //Nurmikko, A. V. //Ackley, D. //Colvard, C. //Lee, H. M/=BrbwBrown Univ,Div Engn/Providence//Ri/02912 ; Brown Univ,Dept P@pN~)|-i.=@MGlembocki, O. J. //Shanabrook, B. V. //Bottka, N. //Beard, W. T. //Comas, J. MG=(vԫ Usn,Res Lab/Washington//Dc/20375 G=(vԫPhotoreflectance Characterization of Interband-Transitions in GaAs/AlGaAs Multiple Quantum Wells and Modulation-Doped HeterojunctionsG=(vԫ03.3.1G=(vԫ Applied Physics LettersG=(vԫ ArticleV$M_@_V 1985 May 15'=(vԫ'=(vԫ46V$M_@_V10V$M_@_V970-972V$M_@_V%D\\As01mesant\Procite Databases\WCS\Articles\Glembocki OJ 1985 05.pdf,XhH9XOXFO'=(vԫ+180V$M_@_V52130ning Procedures for Si, Ge, and III-V Compound SemiconductorsW=؜pP08.2.4=؜pP Applied Physics Lettersning Procedures for Si, Ge, and III-V Compound SemiconductorsW=؜pP08.2.4=؜pP Applied Physics Letters_ 8$316-318$M_$@_ 8$%9\\Aeron\Procite Databases\WCS\Articles/Aspnes DE 1981.pdf9$M_$@_ 8$+178$M_$@_ 8$ 2200o;g1?EOudar, J. L. //Hulin, D. //Migus, A. //Antonetti, A. //Alexandre, F. E@E=uXfEcole Polytech,Ecole Natl Super Tech Avancees,Opt Appl ; Ctr Natl EoN~ ?|-tud Telecommun,Lab Bagneux/F-92220f@E=uXXSubpicosecond Spectral Hole Burning Due to Non-thermalized Photoexcited Carriers in GaAsX@E=uXR01.6.2 Ultrafast Carrier-Carrier Scattering: Response to Ultrashort Optical PulsesRM=uX Physical Review Letters@E=uX Article$M_@_\91985 November 4$M_@_\955$M_@_\919$M_@_\9 2074-2077 $M_@_\9%@\\As01mesant\Procite Databases\WCS\Articles\Oudar JL 1985 11.pdf@$M_@_\9+215$M_@_\9 1440;@Averback, R. S. Y=u8y<8Argonne Natl Lab,Div Mat Sci & Technol/Argonne//Il/604398Y=u8y<&Fundamental-Aspects of Ion-Beam Mixing&Y=u8y<08.1.3Y=u8y< fNuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and AtomsfY=u8y< Article$M_4$@_~415$M_4$@_~41-6$M_4$@_~4675-687g=u8y<%@\\As01mesant\Procite Databases\WCS\Articles/Averback RS 1986.pdf@$M_4$@_~4+149$M_4$@_~42260} =1?2n. *(<@ Wilson, A.H. =pco:<(The Theory of Electronic Semi-Conductors(=pco:<.01.4.2 "Shallow" Extended-Wave-Function Levels.=pco:< Proceedings of the Royal Society =pco:<1932u$M_~@_buA134u$M_~@_bu277-287h=pco:<h=pco:<%>\\As01mesant\Procite Databases\WCS\Articles/Wilson AH 1931.pdf>u$M_~@_bu61690o;@"oRoukes, M. L. //Scherer, A. //Allen, S. J. //Craighead, H. G. //Ruthen, R. M. //Beebe, E. D. //Harbison, J. P. oȋ=htO"Bell Commun Res/Red Bank//Nj/07701"ȋ=htO6Quenching of the Hall-Effect in a One-Dimensional Wire6ȋ=htO03.4.2ȋ=htOȋ=htO Physical Review Lettersȋ=htO Article$M_@_: 1987 Dec 28 $M_@_:59$M_@_:26$M_@_: 3011-3014 $M_@_:%A\\As01mesant\Procite Databases\WCS\Articles\Roukes MLl 1987 12.pdfA$M_@_:+278$M_@_:1570i(\\As01mesant\Procite Databases\WCS\Articles/Wannier G 1937.pdf>$M_T^t@_lh l61700(t+136$M_ gDh@_t,Electron Wave-Guide/ Current Distributions/ Hall Point-Contact/ Gaas-Algaas/ Conductance Fluctuations/ Formula/ Magnetic-Fields/ SDcattering/ Systems$M_ gDh@_t2550]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_ :N~4p<@r AAkasaki, I. //Amano, H. //Koide, Y. //Hiramatsu, K. //Sawaki, N. A:=pq.4Nagoya Univ,Dept Electr,Furo Cho/Nagoya 46401//Japan4:=pq.Effects of AlN Buffer Layer on Crystallographic Structure and on Electrical and Optical-Properties of GaN and Ga1-xAlxN (0 < x <= 0.4) Films Grown on Sapphire Substrate by MOVPE:=pq.07.5.3:=pq. Journal of Crystal Growth:=pq. Article8$M_t;d=@_\=819898$M_t;d=@_\=8 988$M_t;d=@_\=81-28$M_t;d=@_\=8209-2198$M_t;d=@_\=8%?\\As01mesant\Procite Databases\WCS\Articles\\Akasaki I 1989.pdf,:=pq.:=pq.:=pq.+3238$M"_t;d=@_\=82930=(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 =(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 =(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 or of two-dimensional four-terminal junctions in the ballistic regime. Experimentally, these systems exhibit magnetotransport anomalies at small fields, suppression (malies at small fields, suppression (70$M_@_HN~,*;@ EBaranger, H. U. //Divincenzo, D. P. //Jalabert, R. A. //Stone, A. D. E-=(plAt&T Bell Labs,1-D-230/Murray Hill//Nj/07974 ; Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/10598 ; Yale Univ/New Haven//Ct/06520-=(plEClassical and Quantum Ballistic-Transport Anomalies in MicrojunctionsE-=(pl02.5.4-=(pl-=(pl "Physical Review B-Condensed Matter"-=(pl 1991 Nov 15 Article$M_ gDh@_t44$M_ gDh@_t19$M_ gDh@_t 10637-10675 $M_ gDh@_t%C\\As01mesant\Procite Databases\WCS\Articles\Baranger HU 1991 11.pdf,$M_ gDh@_t$M_ gDh@_t* We have performed quantum-mechanical and classical calculations of the magnetotransport behavior of two-dimensional four-terminal junctions in the ballistic regime. Experimentally, these systems exhibit magnetotransport anomalies at small fields, suppress <[?6(Abstreiter, G.//Cardona, M.//Pinczuk, A.(=( rt Tech Univ Munich,Dept Phys/D-8046 Garching//Fed Rep Ger ; Max Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep Ger ; at & T Bell Labs/Holmdel//Nj/07733=( rt ]Light Scattering in Solids IV: Light-Scattering by Free Carrier Excitations in Semiconductors]=( rt 02.4.3=( rt  Topics in Applied Physics=( rt  Review$M_@_04.4.3(*=rD(*=rDtd04.4.3(*=rD^N~2*-;@ Baranger, H. U. //Mello, P. A. (*=rDtdgAt&T Bell Labs,1d-230,600 Mt Ave/Murray Hill//Nj/07974 ; Univ Nacl Autonoma Mexico,Inst Fis/Mexico Cityg(*=rDtdPMesoscopic Transport Through Chaotic Cavities: a Random S-Matrix Theory ApproachP(*=rDtd04.4.3(*=rDtd Physical Review Letters(*=rDtd Article$M_FG@_G Jul 4, 1994 $M_FG@_G73$M_FG@_G1$M_FG@_G142-145$M_FG@_G%C\\As01mesant\Procite Databases\WCS\Articles\Baranger HU 1994 07.pdfC$M_FG@_G*<We deduce the effects of quantum interference on the conductance of chaotic cavities by using a statistical ansatz for the S matrix. Assuming that the circular ensembles describe the S matrix, we find that the conductance fluctuation and weak-localization magnitudes are universal: they are independent of the size and shape of the cavity if the number of incoming modes, N, is large. The limit of small N is more relevant experimentally; here we calculate the full distribution of the conductance and find striking differences as N changes or a magnetic field is app_Electrical Linear-Response Theory in an Arbitrary Magnetic-Field: a New Fermi-Surface Formation_HHB02.5.3 "Physical Review B-Condensed Matter"HHB ArticleHHBE 1989 Oct 15 HHBE40HHBE12$M_܏@_ԏ17$M_܏@_ԏ8$M_@_ԏ2610^N~Y-L=P.u03.1.4x=P.u "Physical Review B-Condensed Matter"h=P.u Article$M_3$5@_5@ 1984 Jun 15 $M_3$5@_5@29$M_3$5@_5@12$M_3$5@_5@ 7042-7044 $M_3$5@_5@%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1984 06.pdfA$M_3$5@_5@+183$M_3$5@_5@2730;@@ HBerger, P. R. //Chang, K. //Bhattacharya, P. //Singh, J. //Bajaj, K. K. H0n=s+pUniv Michigan,Ctr High Frequency Microelectr,Dept Elect ; Usaf,Wright Aeronaut Labs,Avion Lab,Afwal Aadr/Wrightp0n=s+wRole of Strain and Growth-Conditions on the Growth Front Profile of InxGa1-xAs on GaAs During the Pseudomorphic Regimew0n=s+07.4.10n=s+0n=s+ Applied Physics Letters0n=s+ Article$M_D|@_t`B 1988 AUG 22 $M_D|@_t`B53$M_D|@_t`B8$M_D|@_t`B68;1?^ Brum, J. A. //Bastard, G. ^=o=Ecole Normale Super,Phys Solides Grp/F-75231 Paris 05//France=^=o7Resonant Carrier Capture by Semiconductor Quantum-Wells7^=o03.2.3^=o^=o "Physical Review B-Cond7g'WXDT4-686$M_D|@_t`B%A\\As01mesant\Procite Databases\WCS\Articles\Berger PR 1988 08.pdf,$M_D|@_t`B$M_D|@_t`B+148/$M_D|@_t`B2880;@^ Brum, J. A. //Bastard, G. ^=o=Ecole Normale Super,Phys Solides Grp/F-75231 Paris 05//France=^=o7Resonant Carrier Capture by Semiconductor Quantum-Wells7^=o03.2.3^=o^=o "Physical Review B-Condensed Matter"^=o Article$M_T@_LPH4 1986 Jan 15 $M_T@_LPH433$M_T@_LPH42$M_T@_LPH4 1420-1423 $M_T@_LPH4%?\\As01mesant\Procite Databases\WCS\Articles\Brum JA 1986 01.pdf?$M_T@_LPH;4+162$M_T@_LPH42910@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_@_15$M_@_ 2111-2114 $M_@_%;\\Aeron\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf;$M_8hUL-;@| ?Chang, A. M. //Baranger, H. U. //Pfeiffer, L. N. //West, K. W. ?4=rpd/At&T Bell Labs,600 Mt Ave/Murray Hill//Nj/07974/4=rpd`Weak-Localization in Chaotic Versus Nonchaotic Cavities: a Striking Difference in the Line-Shape`4=rpd04.4.34=rpd Physical Review Letters4=rpd Article$M_@_ Oct 10, 1994 $M_@_73$M_Ш@_15$M_@_ 2111-2114 $M_@_%@\\As01mesant\Procite Databases\WCS\Articles\Chang AM 1994 10.pdf@$M_Ψ@_*wWe report experimental evidence that chaotic and nonchaotic scattering through ballistic cavities display distinct signatures in quantum transport. In the case of nonchaotic ;1? Chang, Y. C. //Aspnes, D. E. /=pnԫUniv Illinois,Dept Phys,1110 W Green St/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801 ; Bell Commun Res Inc/Red Bank//Nj/07701/=pnԫGTheory of Dielectric-Function Anisotropies of (001) GaAs (2x1) SurfacesG/=pnԫ06.1.2/=pnԫ "Physical Review B-Condensed Matter"/=pnԫ Article,$M_\5L7@_D7f\, 1990 Jun 15 @=pnԫ41,$M_\5L7@_D7f\,17,$M_\5L7@_D7f\, 12002-12012 ,$M_\5L7@_D7f\,%;\\Aeron\Procite Databases\WCS\Artic\\Aeron\Procite Databases\WCS\Artic^N~-dArticles\Chang YC 1990 06.pdf,W(hH9XXF@=pnԫ@=pnԫ+110,$M_\5L7@_D7f\,2950;@ 7Chomette, A. //Deveaud, B. //Regreny, A. //Bastard, G. 7Pp=v>RoCtr Natl Etud Telecommun/F-22301 Lannion//France ; Ecole Normale Super,Phys Solide Grp/F-75231 Paris 05//FranceoPp=v>RYObservation of Carrier Localization in Intentionally Disordered GaAs/GaAlAs SuperlatticesYPp=v>R04.2.2=v>R=v>R Physical Review LettersPp=v>R Articleb$M_km@_mXb 1986 Sep 22 b$M_km@_mXb57b$M_km@_mXb12b$M_km@_mXb 1464-1467 b$M_km@_mXb%B\\As01mesant\Procite Databases\WCS\Articles\Chomette A 1986 09.pdfBb$M_km@_mXb+127b$M_km@_mXb2960=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_P=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_P=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_PDt'W\l>@"Beattie, A. R. //Landsberg, P. T. "8=@rAuger effect in semiconductors8=@rO01.6.4 Slow Electron-Hole Recombination: Response to Minority Carrier InjectionO8=@r WProceedings of the Royal Society of London Series a-Mathematical and Physical SciencesW8=@r 1959E$M_NP@_P$E249E$M_NP@_P$E1256E$M_NP@_P$E16-29E$M_NP@_P$E%?\\As01mesant\Procite Databases\WCS\Articles/Beattie AR 1959.pdf,=@r=@r)0Copyright Statement: (c)2003 Inst. For Sci. Info0E$M_NP@_P$E+267E$M_NP@_P$E,A1959wu31900003E$M_NP@_P$E65280ound Semicond ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Univ Illinois,Mat Res Lab/Urbana//Il/61801I=qԫ4Carbon Diffusion in Undoped, N-Type, and P-Tybon Diffusion in Undoped, N-Type, and P-Type GaAs4I=qԫ08.1.1I=qԫ Applied Physics LettersI=qԫ ArticleR$M_<[,]@_$]<\\As01mesant\Procite Databases\WCS\Articles/Hersee SD 1986.pdf>$M_ݽF@_hE+110$M_@_hE3330ݕ=1?@07.1.1HC Evans, R.C. HC$An Introduction to Crystal Chemistry$HC Cambridge HC0Cambridge University PressHC01964HC0%NoneHC064320 Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l  Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l  Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l -]<lN~-08.2.1=pv^ &Journal of Vacuum Science & Technology&=pv^ Articleo$M_xz@_zo 1978 Jul-Aug o$M_xz@_zo15o$M_xz@_zo4o$M_xz@_zo 1274-1286 o$M_xz@_zo%B\\As01mesant\Procite Databases\WCS\Articles\Goddard WA 1978 07.pdfBo$M_xz@_zo+113o$M_xz@_zo3250;@ fHeinecke, H. //Brauers, A. //Grafahrend, F. //Plass, C. //Putz, N. //Weyers, M. //Luth, H. //Balk, P. f=`p3nRhein Westfal Th Aachen,Inst Semicond Electr/D-5100 ; Rhein Westfal Th Aachen,Sonderforsch Bereich 202/D-5100n=`p36Selective Growth of GaAs in the MOMBE and MOCVDSystems6=`p306.5.2=`p3 Journal of Crystal Growth=`p3 Article`$M_ik@_k4`1986`$M_ik@_k4`77`$M_ik@_k4`1-3`$M_ik@_k4`303-309`$M_ik@_k4`%?\\As01mesant\Procite Databases\WCS\Articles/Heinecke H 1986.pdf?`$M_ik@_k4`+104`$M_ik@_k4`3320<AA Study of the Orientation Dependence of Ga(Al)As Growth by MOVPEAH=q\<06.4.2H=q\< Journal of Crystal Growth<AA Study of the Orientation Dependence of Ga(Al)As Growth by MOVPEAH=q\<06.4.2H=q\< Journal of Crystal Growth @ );@4 KKang, W. //Stormer, H. L. //Pfeiffer, L. N. //Baldwin, K. W. //West, K. W. K=tl,$At&T Bell Labs/Murray Hill//Nj/07974$=tl,How Real Are Composite Fermions=tl,02.6.20=tl, Physical Review Letters=tl, Article$M_l\@_T`1l Dec 6, 1993 $M_l\@_T`1l71$M_l\@_T`1l23$M_l\@_T`1l 3850-3853 $M_l\@_T`1l%>\\As01mesant\Procite Databases\WCS\Articles\Kang W 1993 12.pdf,$M_l\@_T`1l$M_l\@_T`1l*UAccording to recent theories, a system of electrons at the half-filled Landau level can be transformed to an equivalent system of composite fermions at zero effective magnetic field. In order to test for these new particles, we have studied transport in antidot superlattices in a two-dimensional electron gas. At low magnetic fields electron transport exhibits well-known resonances at fields where the classical cyclotron orbit becomes commensurate with the antidot lattice. At nu=1/2 we observe the same dimensional resonances. This establishes the semiclassical behavior of composite fermions.U$M_l\@_T`1l+192$M_l\@_T`1l,pIncompressible Quantum Fluid/ Dimensional Electron-Gas/ States/ Magnetoresistance/ Statistics/ Hierarchy/ Systemp-$M_l\@_T`1l3380;1?f Lee, Y. H. //Chavezpirson, A. //Koch, S. W. //Gibbs, H. M. //Park, S. H. //Jeffery, A. //Peyghambarian, N. //Banyai, L. //Gossard, A. C. //Wiegmann, X7=PnN~ ;@f Lee, Y. H. //Chavezpirson, A. //Koch, S. W. //Gibbs, H. M. //Park, S. H. //Jeffery, A. //Peyghambarian, N. //Banyai, L. //Gossard, A. C. //Wiegmann, X7=PnUniv Arizona,Ctr Opt Sci/Tucson//Az/85721 ; Univ Frankfurt,Inst Theoret Phys/D-6000 Frankfurt 1//Fed Rep ; at&T Bell Labs/Murray Hill//Nj/07974X7=Pn/Room-Temperature Optical Nonlinearities in GaAs/X7=Pn05.1.36=Pn6=Pn Physical Review LettersX7=Pn ArticleA$M_JL@_L A 1986 Nov 10 A$M_JL@_L A57A$M_JL@_L A19A$M_JL@_L A 2446-2449 A$M_JL@_L A%>\\As01mesant\Procite Databases\WCS\Articles\Lee YH 1986 11.pdf>A$M_JL@_L A+149.A$M_JL@_L A3430.=01?J00.1HF Ashby, M.F. HF(Materials Selection in Mechanical Design(HF2ndHF OxfordHF Butterworth-HeinemannHF 1999HF A%NoneHF 64330=g1?T01.2.1 Bonds and EnergiesHCPauling, LinusHCThe Nature of the Chemical BondHCIthacaHC0Cornell University PressHC01960HC0%NoneH =$TN~ -%C064340p;@9Weisbuch, C. //Nishioka, M. //Ishikawa, A. //Arakawa, Y. 9]=Rhein Westfal Th Aachen,Inst Semicond ; Rhein Westfal Th Aachen,Bereich Sonderforsch 202/D-5100 ; Rhein Westfal Th Aachen,Inst Phys 2/D-5100 Aachen//Fed Rep=v>@A Comparative-Study of Ga(CH3)3 and Ga(C2H5)3 in the MOMBE GaAs@=v>06.4.2=v> Journal of Crystal Growth=v> Article $M_ @_  1986 $M_ @_  74 $M_ @_  2 $M_ @_  292-300 $M_ @_  %;\\As01mesant\Procite Databases\WCS\Articles/Putz N 1986.pdf, $M_ @_   $M_ @_  +158 $M_ @_  3700ysical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_ysical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_ysical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_he experimental spectra reproduce many features of a noninteracting electron model with an added fixed charging energy. However, in detailed observations deviations are apparent: Exchange induces a two-electron sJul 26, 1993 $M_l@_*ul71$M_l@_^N~-p;@ aAshoori, R. C. //Stormer, H. L. //Weiner, J. S. //Pfeiffer, L. N. //Baldwin, K. W. //West, K. W. a;=|vb$At&T Bell Labs/Murray Hill//Nj/07974$;=|vbCN-Electron Ground-State Energies of a Quantum-Dot in Magnetic-FieldC;=|vb03.5.2&=|vb Physical Review Letters;=|vb Article$M_l@_*ul Jul 26, 1993 $M_l@_*ul71$M_l@_*ul4$M_l@_*ul613-616$M_l@_*ul%B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1993 07.pdfB$M_l@_*ul*WUsing single-electron capacitance spectroscopy, we map the magnetic field dependence of the ground state energies of a single quantum dot containing from 0 to 50 electrons. The expe;1?~YReed, M. A. //Bate, R. T. //Bradshaw, K. //Duncan, W. M. //Frensley, W. R. //Shih, H. D. Y0=ptwR4Texas Instruments Inc,Cent Res Labs/Dallas//Tx/7526540=ptwR9Spatial Quantization in GaAs-AlGaAs Multiple Quantum Dots90=ptwR03.5.00=ptwR0=ptwR (Journal of Vacuum Science & Technology B(0=ptwR Article$M_@_K 1986 Jan Feb$M_@_K$M_@_K4$M_@_K1$M_@_K358-360$M_@_K%:\\^N~/-neling between ground states of neighboring quantum wells accompanied by the stimulated emission of a photon.$M_<t@_l\+125$M_<t@_l\,El ?ectric-Fields$M_<t@_l\1100;@4Shanabrook, B. V. //Glembocki, O. J. //Beard, W. T. 40=o Usn,Res Lab/Washington//Dc/20375 0=oMPhotoreflectance Modulation Mechanisms in GaAs-Alxga1- Multiple Quantum-WellsM0=o03.3.20=o0=o "Physical Review B-Condensed Matter"0=o Article$M_@_}\ 1987 Feb 15 $M_@_}\35$M_@_}\5$M_@_}\ 2540-2543 $M_@_}\%E\\As01mesant\Procite Databases\WCS\Articles\Shanabrook BV 1987 02.pdfET$M_@_}\+172$M_@_}\3760ses\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120%"%9\\Aeron\Procite Databases\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120%"%9\\Aeron\Procite Databases\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120%"%9\\Aeron\Procite Databases\WCS\Articles\Aspnes DE 1982.pdf'<=s.!<=s.!+495"$M_+-@_|-2%"2120Bre% -As01mesant\Procite Databases\WCS\Articles\Reed MA 1986 01.pdf?$M_@_K+105$M_@_K3710i.=@LtKeay, B. J. //Zeuner, S. //Allen, S. J. //Maranowski, K. D. //Gossard, A. C. //Bhattacharya, U. //Rodwell, M. J. W. t(o=uhUniv Calif Santa Barbara,Ctr Free Electron Laser ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106 ; Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa(o=uhDynamic Localization, Absolute Negative Conductance, and Stimulated, Multiphoton Emission in Sequential Resonant Tunneling Semiconductor Superlatticesp(o=uh(o=uh%(o=uh04.1.1.2(o=uh(o=uh Physical Review Letters(o=uh Article$M_<t@_l\ Nov 27, 1995 $M_<t@_l\75$M_<t@_l\22$M_<t@_l\ 4102-4105 $M_<t@_l\%?\\As01mesant\Procite Databases\WCS\Articles\Keay BJ 1995 11.pdf?$M_<t@_l\*We report the first observation of absolute negative conductance and multiphoton stimulated emission in sequential resonant tunneling semiconductor superlattices driven by intense terahertz electric fields. With increasing terahertz field strength the conductance near zero de bias decreases towards zero and then becomes negative. This is accompanied by new steps and plateaus that are attributed to multiphoton-assisted resonant tun+495"$M_+-@_|-2%"2120!+495"$M_+-@_|-2%"2120"$M_+-@_|-2%"2120k3c#S-,4=?t4=?t4=?t4=?t4=?t4=?t 4=?t4=?t4=?t4=?t4=?t4=?t4=?t4=?t 4=?tbEffective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structuresb4=?t01.2.3 Piezoelasticity4=?t Applied Physics Letters4=?t1998)$M_24@_4F)73)$M_24@_4F)14)$M_24@_4F) 2006-2008 )$M_24@_4F)%C\\As01mesant\Procite Databases\WCS\Articles\Chichibu SF 1998 10.pdfC)$M_24@_4F))Copyright 2003 SciSearch Plus)$M_24@_4F<)+83)$M_24@_4F)64560 X=pw)ԫ^Role of Interface Roughness and Alloy Disorder in Photoluminescence in Quantum-Well Structures^ X=pw)ԫ03.1.2 X=p X=pw)ԫ^Role of Interface Roughness and Alloy Disorder in Photoluminescence in Quantum-Well Structures^ X=pw)ԫ03.1.2 X=p2N~$<;@Singh, J. //Bajaj, K. K.  X=pw)ԫcUniversal Energy Syst Inc,4401 Dayton Xenia ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright Pattersonc X=pw)ԫ^Role of Interface Roughness and Alloy Disorder in Photoluminescence in Quantum-Well Structures^ X=pw)ԫ03.1.2 X=pw)ԫ Journal of Applied Physics X=pw)ԫ Article`$M_ik@_k+` 1985 Jun 15h/=pw)ԫh/=pw)ԫ57`$M_ik@_k+`12`$M_ik@_k+` 5433-5437 `$M_ik@_k+`%?\\As01mesant\Procite Databases\WCS\Articles\Singh J 1985 06.pdf,XhH9XXFh/=pw)ԫ+145`$M_ik@_k+`3770V=@5?|Direct Evidence for the Site of Substitutional Carbon in GaAs>=u507.1.7=u5 Applied Physics Letters=u5 Article@_L<@_4,)L1982@_L<@_4,)L41@_L<@_4,)L1@_L<@_4,)L70-72@_L<@_4,)L%=\\As01mesant\Procite Databases\WCS\Articles/Theis WM 1982.pdf=@_L<@_4,)L*Direct evidence that substitutional carbon in GaAs is predominantly on the As sublattice is obtained from Fourier transform infrared spectroscopy absorption measurements of the carbon-induced localized vibrational mode (LVM). The previously reported LVM absorption band of carbon is measured under high resolution conditions and is found to be the near superposition of at lea <1?@FSeilmeier, A.//Hubner, H. J.//Abstreiter, G.//Weimann, G.//Schlapp, W.F"=s$Tech Univ Munich,Dept Phys/D-8000 Munich 2//Fed Rep Ger ; Tech Univ Munich,Dept Phys/D-8046 Garching//Fed Rep Ger ; Deutsch Bundespost,Forschungsinst/D-6100 Darmstadt//Fed Rep Ger"=s$wIntersubband Relaxation in GaAs-AlxGa1-xAs Quantum-Well Structures Observed Directly by an Infrared Bleaching Techniquew"=s$04.3.3S=s$ Physical Review LettersK=@_=2+1902$M_;=@_=260480^N~.d"=s$ Article2$M_;=@_=219872$M_;=@_=2592$M_;=@_=2122$M_;=@_=2 1345-1348 2$M_;=@_=2202$M_;=@_=2%C\\As01mesant\Procite Databases\WCS\Articles\Seilmeier A 1987 09.pdfC2$M_P;=@_=2+1902$M_;=@_=260480;@dBeenakker, C. W. J. }= u=/Philips Res Labs/5600 Md Eindhoven//Netherlands/}= u=4Edge Channels for the Fractional Quantum Hall-Effect4}= u=02.6.2}= u= Physical Review Letters}= u= Article$M_l$\&@_T&(l 1990 Jan 8 $M_l$\&@_T&(l64$M_l$\&@_T&(l2$M_l$\&@_T&(l216-219$M_l$\&@_T&(l%E\\As01mesant\Procite Databases\WCS\Articles\Beenakker CWJ 1990 01.pdf,$M_l$\&@_T&(l$M_l$\&@_T&(l+169$M_l$\&@_T&(l3940 Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t :jFv\ .W=@ Ambacher, O. XF=xqMTech Univ Munich,Walter Schottky Inst,Am Coulombwall,D-85748 Garching,GermanyMXF=xq-Growth and Applications of Group Iii Nitrides-XF=xq12.0(=xq $Journal of Physics D-Applied Physics$XF=xq Review@_|@_t Oct 21, 1998 @_|@_t31@_|@_t20@_|@_t 2653-2710 @_|@_t353@_|@_t%B\\As01mesant\Procite Databases\WCS\Articles\Ambacher O 1998 10.pdfB@_|@_t*Recent research results pertaining to InN, GaN and AIN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions W=u=? Nakamura, S. :Nichia Chem Ind,Dept Res & Dev,491 Oka,Tokushima 774,Japan:`The Roles of Structural Imperfections in Ingan-Based Blue Light-Emitting Diodes and Laser Diodes`Dev,491 Oka,Tokushima 774,Japan:`The Roles of Structural Imperfections in Ingan-Based Blue Light-Emitting Diodes and Laser Diodes`^N~ .tW=@ Nakamura, S. :Nichia Chem Ind,Dept Res & Dev,491 Oka,Tokushima 774,Japan:`The Roles of Structural Imperfections in Ingan-Based Blue Light-Emitting Diodes and Laser Diodes`07.5.4 Science Review Aug 14, 1998 2815379956-96172%B\\As01mesant\Procite Databases\WCS\Articles\Nakamura S 1998 08.pdfB*High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InCaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 X 10(8) to 1 X 10(12) cm(-2)). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate; InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2;1?$Beenakker, C. W. J. //Vanhouten, H. $N=r>d/Philips Res Labs/5600 Ja Eindhoven//Netherlands/N=r>d2Billiard Model of a Ballistic Multiprobe Conductor2N=r>d04.4.3N=r>d Physical Review LettersN=r>d Article$M_\L@_D 1989 Oct 23 $M_\L@_D63$M_\L@_D17$M_\L@_D 1857-1860nor//Ny/105$M_\L@_D 1857-1860i^N~~l. mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.+139,hGrown GaN Films/ Gallium Nitride/ Buffer Layer/ Hydrogena<tion/ Superlattices/ Luminescence/ Sapphire/ Mgh64400;@$Beenakker, C. W. J. //Vanhouten, H. $N=r>d/Philips Res Labs/5600 Ja Eindhoven//Netherlands/N=r>d2Billiard Model of a Ballistic Multiprobe Conductor2N=r>d04.4.3N=r>d Physical Review LettersN=r>d Article$M_\L@_D 1989 Oct 23 $M_\L@_D63$M_\L@_D17$M_\L@_D 1857-1860 $M_\L@_D%E\\As01mesant\Procite Databases\WCS\Articles\Beenakker CWJ 1989 10.pdfE$M_\L@_D+160$M_\L@_D4000+=(pml04.4.3+=(pml "Physical Review B-Condensed Matter"+=(pml Article$M_"#@_+=(pml04.4.3+=(pml "Physical Review B-Condensed Matter"+=(pml Article$M_"#@_+=(pml04.4.3+=(pml "Physical Review B-Condensed Matter"+=(pml Article$M_"#@_-$M_68@_|8 -379-$M_68@_|8 -6564-$M_68@_|8 -413-419-$M_68@_|8 -%=\\Aeron\Procite Databasite DatabasBrb"%..p;@Ashoori, R. C. ;=pq<(Mit,Dept Phys,13-2053,Cambridge,Ma 02139(;=pq<Electrons in Artificial Atoms;=pq<04.4.1;=pq< Nature;=pq< Review-$M_68@_|8 - Feb 1, 1996 -$M_68@_|8 -379-$M_68@_|8 -6564-$M_68@_|8 -413-419-$M_68@_|8 -%B\\As01mesant\Procite Databases\WCS\Articles\Ashoori RC 1996 02.pdf,-$M_68@_|8 --$M_68@_|8 -*|Progress in semiconductor technology has enabled the fabrication of structures so small that they can contain just one mobile electron. By varying controllably the number of electrons in these 'artificial atoms' and measuring the energy required to add successive electrons, one can conduct atomic physics experiments in a regime that is inaccessible to experiments on real atoms.|-$M_68@_|8 -+244-$M_68@_|8 -,Quantum Hall Regime/ Coulomb Island/ Magnetic-Field/ Spectroscopy/ Transport Spectroscopy/ Zeeman Bifurcation/ Spectra/ Oscillations/ States/ Heterostructures-$M_68@_|8 -2280;1?"?Bhat, R. //Kapon, E. //Hwang, D. M. //Koza, M. A. //Yun, C. P. ?=@=p 8Bell Commun Res,331 Newman Springs Rd/Red Bank//Nj/077018.pdf6=@=p +115v$M_ @_v4130;1?6EBiegelsen, D. K. //Bringans, R. D. //Northrup, J. E. //Swartz, L. E. E=r\K5Xerox Corp,Palo Alto Res Ctr,3333 Coyote Hill Rd/Palo5N~;@rXBimberg, D. //Christen, J. //Fukunaga, T. //Nakashima, H. //Mars, D. E. //Miller, J. N. Xh=XqFTech Univ Berlin,Inst Festkorperphys,Hardenbergstr 36/D-1000 ; Optoelectr Joint Res Lab/Kawasaki 211//Japan ; Hewlett Packard Labs/Palo Alto//Ca/94304h=XqFVCathodoluminescence Atomic Scale Images of Monolayer Islands at GaAs/GaAlAs InterfacesVh=XqF06.2.4Z=XqF (Journal of Vacuum Science & Technology B(h=XqF Article$M_@_)̿ 1987 JUL-AUG $M_@_)̿5$M_@_)̿4$M_@_)̿ 1191-1197 $M_@_)̿%A\\As01mesant\Procite Databases\WCS\Articles\Bimberg D 1987 07.pdfA$M_@_)̿+147$M_@_) 4210xs,706518p=xs, US3761785 p=xs,USp=xs, 9/25/1973 p=xxs,706518p=xs, US3761785 p=xs,USp=xs, 9/25/1973 p=xUS4927782 US4972248 USRE28952 US6100548 US3951708 US3975221 US4212022 US4262296 US4631560 US4683642 US4985369 US5087581 US6300199 US3823352 US3846822 US3851379 US3866310 US3924265 US3936331 US3994758 US3999211 US4466008 US4530149 US4750023 US4768071 US5405454 US5543351]p=xs,%6\\Aeron\Procite Databases\WCS\Patents\US03761785__.pdf6p^2N~.$. Physical Review Letters=r\K Articler$M_{}@_}r 1990 Jul 23 =r\K65r$M_{}@_}r4r$M_{}@_}r452-455r$M_{}@_}r%D\\As01mesant\Procite Databases\WCS\Articles\Biegelsen DK 1990 07.pdf,hhuH9XXF=r\K+147r$M_{}@_}r4150݊(=@>Biefeld, R. M.//Fritz, I. J.//Gourley, Paul L.//Osbourn, G. C.:1=Ho#1=Ho#1=Ho#Superlattice Optical Device1=Ho#04.31=Ho#UThe United States of America as Represented by The United States Department of EnergyU1=Ho#5971951=Ho# US4616241 1=Ho#US1=Ho# 10/7/1986 1=Ho# US4616241 1=Ho#US4319259 US43652601=Ho#x"J. W. Matthews et al., ""Defects in Epitaxial Multilayers"", Journal of Crystal Growth 27 (1974), pp. 118-125.; G. C. Osbourn et al., ""A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Supperlattice"", Appl. Phys. Lett. 41(2), Jul. 15, 1982, pp. 172-174.; Osbourn, ""Strained-Layer Superlattices from Lattice Mismatched Materials"", J. Appl. Phys. 53(3), Mar. 1982, pp. 1586-1589."x1=Ho#"IUS4711857 US4712121pnN~nL.992 $M_ @_71$M_ @_1$M_ @_533-535$M_ @_%C\\As01mesant\Procite Databases\WCS\Articles\Tsukamoto S 1992 01.pdfC؞=rXMԫ*lSuccessful fabrication of thin GaAs quantum wires (120-200 angstrom) x (200-300 angstrom) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.l$M_ @_+137$M_ @_^,&Well Wires/ Confinement/ Lasers/ Boxes&$M_ @_1820sical Review B-Condensed Matter"=)t Article@_|l@_d|1989@_|l@_d|40@_|lsical Review B-Condensed Matter"=)t Article@_|l@_d|1989@_|l@_d|40@_|lsical Review B-Condensed Matter"=)t Article@_|l@_d|1989@_|l@_d|40@_|ly Resolved Cathodoluminescence Spectra of Ingan Quantum WellsEp=t07.4.2K=t Applied Physics Lettersp=t Ar$TN~ 5>@$Chichibu, S.//Wada, K.//Nakamura, S.$p=tSci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba 278,Japan ; Nippon Telegraph & Tel Publ Corp,Syst Elect Labs,Cpd Semicond Mat Res,Atsugi,Kanagawa 24301,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Anan,Tokushima 774,Japanp=tESpatially Resolved Cathodoluminescence Spectra of Ingan Quantum WellsEp=t07.4.2K=t Applied Physics Lettersp=t Article^@_gi@_i^ Oct 20, 1997 ^@_gi@_i^71^@_gi@_i^16^@_gi@_i^ 2346-2348 ^@_gi@_i^15^@_gi@_i^%B\\As01mesant\Procite Databases\WCS\Articles\Chichibu S 1997 10.pdfB^@_gi@_i^*Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized 5>h1?YShikanai, A.//Azuhata, T.//Sota, T.//Chichibu, S.//Kuramata, A.//Horino, K.//Nakamura, S.Y 5=v Waseda Univ,Dept Elect Elect & Comp Engn,Shinjuku Ku,3-4-1 Ohkubo,Tokyo 169,Japan ; Sci Univ Tokyo,Fac Sci & Technol,Noda,Chiba 278,Japan ; Fujitsu Labs Ltd,Opt Semicond Devices Lab,Atsugi,Kanagawa 24301,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Tokushima 774,Japan  5=vGBiaxial Strain Dependence of Exciton Resonance Energies in Wurtzite GanG 5=v01.4.4 Excitonstonsj^N~T.SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially integrated CL peak consisted of emissions from complementary real spaces, and the area was smaller than 60 nm in lateral size. (C) 1997 American institute of Physics.^@_gi@_i^+132^@_gi@_i^,Laser^@_gi@_i^ 644705>@YShikanai, A.//Azuhata, T.//Sota, T.//Chichibu, S.//Kuramata, A.//Horino, K.//Nakamura, S.Y 5=v Waseda Univ,Dept Elect Elect & Comp Engn,Shinjuku Ku,3-4-1 Ohkubo,Tokyo 169,Japan ; Sci Univ Tokyo,Fac Sci & Technol,Noda,Chiba 278,Japan ; Fujitsu Labs Ltd,Opt Semicond Devices Lab,Atsugi,Kanagawa 24301,Japan ; Nichia Chem Ind Ltd,Dept Res & Dev,Tokushima 774,Japan  5=vGBiaxial Strain Dependence of Exciton Resonance Energies in Wurtzite GanG 5=v01.4.4 Excitons 5=v Journal of Applied Physics 5=v Article$M_@_ Jan 1, 1997 $M_@_`%)t=?07.1.7HC Kroger, F.A. HC#The Chemistry of Imperfect Crystals#HC Amsterdam HC0 North-Holland HC01964HC0%NoneHC0 64490ncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(ncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(ncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(%UAqN~,d.Electronics#(=tt ArticleX$M_ac@_cX1994 FebX$M_ac@_cX30X$M_ac@_cX2X$M_ac@_cX511-523X$M_ac@_cX%>\\As01mesant\Procite Databases\WCS\Articles\Zah CE 1994 02.pdf>X$M_ac@_cX*oDesign considerations for fabricating highly efficient uncooled semiconductor lasers are discussed. The parameters investigated include the temperature characteristics of threshold current, quantum efficiency, and modulation speed. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the AlxGayIn1-x-y As/InP material system instead of the conventional GaxIn1-xAsyP1-y/InP material system. To reduce the transparency current and the carrier-density-dependent loss due to the intervalence-band absorption, strained-layer quantum wells a re chosen as the active layer. Experimentally, 1.3-mum compressive-strained five-quantum-well lasers and tensile-strained three-quantum-well lasers were fabricated using a 3-mum wide ridge-waveguide l aser structure. For both types of lasers, the intrinsic material parameters are found to be similar in magnitude and in temperature dependence if they are normalized to each well. Specifically, the co;1?zHLevine, B. F. //Bethea, C. G. //Hasnain, G. //Walker, J. //Malik, R. J. Hh =(t$At&T Bell Labs/Murray Hill//Nj/07974$h =(toHigh-Detectivity D-Star = 1.0x1010 Cm Square-Root-Hz/W GaAs AlGaAs Multiquantum Well Lambda = 8.3 Mu-M Infraredoh =(t11.3.3h =(^N~$i.=@Zah, C. E. //Bhat, R. //Pathak, B. N. //Favire, F. //Lin, W. //Wang, M. C. //Andreadakis, N. C. //Hwang, D. M. //Koza, M. A. //Lee, T. P. //Wang, Z. //Darby, D. //Flanders, D.//Hsieh, J. J. (=ttVBellcore,Photon Device Res Grp/Red Bank//Nj/07701 ; Lasertron Inc/Burlington//Ma/01803V(=ttzHigh-Performance Uncooled 1.3-Mu-M AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications &(=tt(=tt(=tt(=tt(=tt(=tt(=tt(=tt(=tt(=ttD(=tt10.2.1(=tt #IEEE Journal of Quantum Electronics#(=tt ArticleX$M_ac@_cX1994 FebX$M_ac@_cX30X$M_ac@_cX2X$M_ac@_cX511-523X$M_ac@_cX%>\\As01mesant\Procite Databases\WCS\Articles\Zah CE 1994 02.pdf>X$M_ac@_cX*o;1?zHLevine, B. F. //Bethea, C. G. //Hasnain, G. //Walker, J. //Malik, R. J. Hh =(t$At&T Bell Labs/Murray Hill//Nj/07974$h =(toHigh-Detectivity D-Star = 1.0x1010 Cm Square-Root-Hz/W GaAs AlGaAs Multiquantum Well Lambda = 8.3 Mu-M Infraredoh =(t11.3.3h =(h =(t11.3.3h =(^N~ yl.t.th =(t Applied Physics Lettersh =(t ArticleS$M_\^@_^S 1988 JUL 25 S$M_\^@_^S53S$M_\^@_^S4S$M_\^@_^S296-298S$M_\^@_^S%A\\As01mesant\Procite Databases\WCS\Articles\Levine BF 1988 07.pdf,S$M_\^@_^SS$M_\^@_^S+150S$M_\^@_^S4730i.=@Mori, N. //Ando, T. p=ptԫuOsaka Univ,Dept Electr Engn,2-1 Yamada Oka/Suita/Osaka ; Univ Tokyo,Inst Solid State Phys,Minato Ku/Tokyo 106//Japanup=ptԫIElectron Optical-Phonon Interaction in Single and Double HeterostructuresIp=ptԫ03.2.1p=ptԫ "Physical Review B-Condensed Matter"p=ptԫ Article$M_@_| 1989 Sep 15=ptԫ=ptԫ40$M_@_|9$M_@_| 6175-6188 $M_@_|%>\\As01mesant\Procite Databases\WCS\Articles\Mori N 1989 09.pdf,@/hH9XXF=ptԫ=ptԫ+326$M_@_|1300;1?6Macdonald, A. H. //Platzman, P. M. //Boebinger, G. S. 6=@r0̬SIndiana Univ,Dept Phys/Bloomington//in/47405 ; at&T Bell Labs/Murray Hill//Nj/07974Csi)YDL;@(Neave, J. H. //Blood, P. //Joyce, B. A. (*=P/v 'Philips Res Labs/Redhill/Surrey/England'*=P/v bCorrelation Between Electron Traps and Growth-Processes N-GaAs Prepared by Molecular-Beam Epitaxyb*=P/v 07.1.7H =P/v  Applied Physics Letters*=P/v  Article$M_,d@_\ 1980$M_,d@_\ 36$M_,d@_\ 4$M_,d@_\ 311-312$M_,d@_\ %@\\As01mesant\Procite Databases\WCS\Articles/Neave JH 1980 02.pdf@$M_,d@_\ +109%$M_,d@_\ 4840')<@6Koster, G.F.//Slater, J.C.?=$sXSimplified Impurity Calculation?=$sX,01.4.3 "Deep" Localized-Wave-Function Levels,?=$sX Physical Review?=$sX1954$M_TE@_ERQT96$M_TE@_ERQT 1208-1123=$sX=$sX%>\\As01mesant\Procite Databases\WCS\Articles/Koster GF 1954.pdf>$M_TE@_ERQT61750ears Ago8x=v84X10.0x=v84X IEEE LEOS Newsletterx=v84X1-14>=v84X%L\\Aeron\Procite Databases\WCS\Articles\Dupuis RD LEOS Newsletter 2003 02.pdfL$M_')@_):64500JK{N~t.<+D5$M_D4@_,V+D728-731$M_D4@_,V+D%A\\As01mesant\Procite Databases\WCS\Articles\Murphy SQ 1994 01.pdfA$M_D4@_,V+D*SThe nu = 1 quantum Hall effect in bilayer 2D electron systems is shown to continuously evolve from a regime dominated by single-particle tunneling into one where interlayer Coulomb interactions stabilize the state. This many-body integer quantum Hall state exhibits a phase transition to a compressible state at large layer separation. We also find evidence for an intriguing and unexpected second transition to a new incompressible state, driven by an in-plane magnetic field. While the origin of this last result is unclear, we discuss a recent model of a pseudospin textural phase transition.S$M_D4@_,V+D+127$M_D4@_,V+D,C2-Dimensional Electron-Systems/ Magnetic-Field/ Energy- Well/ StateC$M_D4@_,V+ D4820ween Electron Traps and Growth-Processes N-GaAs Prepared by Molecular-Beam Epitaxyb*=P/v 07.1.7H =P/v  Applied Physics Lettersween Electron Traps and Growth-Processes N-GaAs Prepared by Molecular-Beam Epitaxyb*=P/v 07.1.7H =P/v  Applied Physics Letterslized-Wave-Function Levels,?=$sX Physical Review?=$sX1954$M_TE@_ERQT96$M_TE@_ERQT 1208-1123=$sX=$sX%9\\Aeron\Procite Databases\WCS\Articles/Koster GF 1954.pdf9$M_TE@_ERQT61750QT617503N~ <T+#>@ Dupuis, R. D. x=v84X!The University of Texas at Austin!x=v84X8The Diode Laser -- the First Thirty Days Forty Years Ago8x=v84X10.0x=v84X IEEE LEOS Newsletterx=v84X1-14>=v84X%Q\\As01mesant\Procite Databases\WCS\Articles\Dupuis RD LEOS Newsletter 2003 02.pdfQ$M_')@_):64500{),>h1?E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEHC Ziman, J.M. HCElectrons and PhononsHCOxfordHC0Clarendon PressHC01960HC0%NoneHC0) p. 56: Despite its obvious crudity, the Debye approximation has the great advantage of supreme simplicity. If any one parameter is required to measure the energy scale of the vibrations of a solid, the Debye temperature is the most appropriate. If any one function is required to represent the distribution of lattice frequencies, the function D = 3(n2/nD2 (0?99:=Xy.Stroscio, M.A.//Dutta, Mitra :=Xy.:=Xy.:=XyyN~ \.Phonons in Nanostructures:=Xy. Cambridge $M_ @_|$ECambridge University Press$M_ @_|$E2001$M_ @_|$E%None$M_ @_|$E)p. 14: From the relation wTO2 + 4p[Ne*2/einf][1/m + 1/M] = wLO2, it follows that wTO = wLO for zone-center phonons in materials with e* = 0; this is just as observed in non-polar materials such as silicon. In polar materials such as GaAs there is a gap between wTO and wLO, associated with the Coulomb energy density arising from e*. p. 41: However, TO phonons produce displacements of the planes of charge such that they remain at fixed distances from each other; that is, the charge planes 'slide' by each other but the normal distance between nplanes of opposite charge does not change. So, TO modes make negligible contributions to P(r) [ the polarization]. p. 42: The Frohlich interaction between electrons and longitudinal optical phonons is proportional to e*. p. 46: There are two anharmonic phonon effects. The first is the Klemens process, in which a zone center LO phonon decays into two LA phonons of opposite k vector. The second is the Ridley channel, in which an LO phonon decays into a TO and an LA phonon. The Ridley channel is expected to dominate in materials, like GaN, in which the zone-center LO phonon energy is more than twice the energy of any available acoustic phonons.$M_ @_|$E Symbol_ @_|$Eymbol_  @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|^N~|.HF ArticleHFP1991HFP 79HFP5HFP702-712HFP%=\\As01mesant\Procite Databases\WCS\Articles/Davis RF 1991.pdf=HFP*Continued development and commercialization of optoelectronic devices, including light-emitting diodes and semiconductor lasers produced from III-V gallium arsenide-based materials, has also generated interest in the much wider bandgap semiconductor monoitride materials containing boron, aluminum, gallium, and indium. The majority of the studies have been conducted on pure gallium nitride thin films having the wurtzite structure, and this emphasis continues to the present day. However, recent research has resulted in the fabrication of p-n junctions in cubic boron nitride, the deposition of cubic gallium nitride, as well as the fabrication of multilayer heterostructures and the formation of thin film solid solutions. Chemical vapor deposition (CVD) has usually been the technique of choice for thin film f %r->>99HCSrivastava, G.P.HCThe Physics of PhononsHCBristol HC0IOP Publishing LtdHC01990HC0%NoneHC0( 0-8527 :4-153-7 HC064530 S>h1?&5Dalcorso, A//Posternak, M//Resta, R//Baldereschi, A  X=r X=r X=r N~;$%%t;%%&* &%&|;&;D& 4&,&$&;%;L&<&;\&T&d&;t&;l&|&;&&&&&&;;&;&&&&;&;&&+&&' ' ;'$' ';";#,'&4'1;<<'ED's<vT'x\'zd'|l'~t'+|' <''<'' ' < ' ' ' $<$ '* '@ 'C 'O ,<R '\ 'm 4<u ' ( '% (B  (L )a <<f (h $( ) 4( ,( <(k D<m L(t L< D( T( \( d(X T< \< t( l( d<2 ( ( ( ) ( ( ( |*|(%(>(> l<?t<( ((|<((<(+(() )<h)$)<)R*4),)<)D) <L)() )) )$),)*4)<)D)L)zpf\RH>4*  vlbXND:0&|rh^TJ@6,"xndZPF<2( ~tj`VLB8.$zpf\RH>4*  vlbXND:0& \t,Y \D| 2, #$d8L';vlbXND:0&dl $Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$E ymbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbo l_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_  @_|$Eymbol_ @_|$E Symbol_ @_|$Eymbol_ @_|$Eymbol_ @_|$E64520p<@ Davis, R. F.  HFDN Carolina State Univ,Dept Mat Sci & Engn,Box 7907/Raleigh//Nc/27695DHF=III-V Nitrides for Electronic and Optoelectronic Applications=HF12.0HF Proceedings of the IEEEHF %r->>99HCSrivastava, G.P.HCThe Physics of PhononsHCBristol HC0IOP Publishing LtdHC01990HC0%NoneHC0( 0-8527 :4-153-7 HC064530 S>h1?&5Dalcorso, A//Posternak, M//Resta, R//Baldereschi, A  X=r X=r X=r =r X=r  y 9~. @_< T*We demonstrate the feasibility of ab initio studies of piezoelectricity within an all-electron scheme. The focus of our analysis is on wurtzite ZnO; for comparison, some results  are also presented for the related materials BeO and ZnS. The comparative study is performed in order to understand the microscopic origin of the peculiar behavior of ZnO, whose piezoelectric respons  e is the strongest among the tetrahedrally bonded semiconductors. In all such materials, the piezoelectric effect results from two different terms of opposite sign: these are usually referred to as th  e ''clamped-ion'' and the ''internal-strain'' contributions. Cancellation amongst them is least effective in ZnO, where the dominant effect is due to a rigid-ion-like mechanism. Furthermore, we comput  e the spontaneous polarization of ZnO and we discuss the puzzling agreement between our calculated value and a very indirect experimental estimate of the same quantity.$M_TD@_<   T+19$M_TD@_< T,lABINITIO CALCULATION/ ELECTRIC POLARIZATION/ III-V-SEMICONDUCTORS/ PHASE/ PYROELECTRIC BEO/ SOLIDS/ WURTZITEl$M_TD@_<  T64550 of Super-Lattice Band-Structure in the Envelope-Function Approximation;8=0vS8=0vS$8=0vS04.2.1 of Super-Lattice Band-Structure in the Envelope-Function Approximation;8=0vS8=0vS$8=0vS04.2.1;Ecole Norm Super,Cnrs,Groupe Phys Solides,24 Rue Lhomond/F-;=xtCSuper-Lattice Band-StruN~2|. S>@&5Dalcorso, A//Posternak, M//Resta, R//Baldereschi, A  X=r X=r X=r  X=r X=r X=r  X=r X=r X =r GAb-initio study of piezoelectricity and spontaneous polarization in ZnOGX=r 01.2.3 PiezoelasticityX=r  "P hysical Review B-Condensed Matter"X=r 1994$M_TD@_< T50$M_TD@_< T15$M_TD@_<  T 10715-10721 $M_TD@_< T%C\\As01mesant\Procite Databases\WCS\Articles\Dal Corso A 1994 10.pdfC$M_TD@_< T' 0163-1829 $ M_TD@_< T)yEnglish PHB Ecublens, Inst Romand Rech Number Phys Mat, Ch-1015 Lausanne, Switzerland PP124 Copyright 2003 SciSearch Plus$M_TD@_< T $M_TD@_< T$M_TD@_< T$M_TD@_< T$M_TD@_< T>$M_TD@_< T$$M_TD p;1?x Bastard, G.  8=0vS7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/1059878=0vSaTheoretical Investigations of Super-Lattice Band-Structure in the Envelope-Function Approximation;8=0vS8=0vS$8=0vS04.2.1C^N~ .  in a Quantum Well: a Simple-Model<N=q[03.1.1N=q[ "Physical Review B-Condensed Matter"N=q[  Article$M_@_{ 1981 Oct 15 $M_@_{24$M_@_{8$M_@_{ 4714 -4722 $M_@_{%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1981 10.pdfA$M_@_{+585$M_@_{  2700i.=@`Asbeck, P. M. //Chang, M. C. F. //Higgins, J. A. //Sheng, N. H. //Sullivan, G. J. //Wang, K. C. `=`s1Rockwell Int Sci Ctr,Bipolar Transistors/Thousand1=`sTGaAlAs/GaAs Heterojunction Bipolar-Transistors: Issues and Prospects for ApplicationT=`s09.2.2=`s %IEEE Transactions on Electron Devices%=`s Article$M_t-.@_.\ 1989 October $M_t-.@_.\36$M_t-.@_.\10$M_t-.@_.\ 2032-2042 $M_t-.@_.\%A\\As01mesant\Procite Databases\WCS\Articles\AsMbeck PM 1989 10.pdfA+126$M_t-.@_.\207081 Sao Paulo//Brazilt*=v 3Electronic States in Semiconductor Heterostructures3*=v 02.3.1*=v 81 Sao Paulo//Brazilt*=v 3Electronic States in Semiconductor Heterostructures3*=v 02.3.1*=v $/_~.p;@ )Bastard, G. //Brum, J. A. //Ferreira, R. )*=v tEcole Norm Super,Dept Phys,24 Rue Lhmond/F-75231 Paris ; Univ Estadual Campinas,Dept Fis/Br-13081 Sao Paulo//Brazilt*=v 3Electronic States in Semiconductor Heterostructures3*=v 02.3.1*=v  ;Solid State Physics-Advances in Research and Applications ;;*=v  Review$M_@_41991$M_@_444$M_@_4230-415$M_@_4%>\\As01mesant\Procite Databases\WCS\Articles/Bastard G 1991.pdf,$M_@_4$M_@_4+220$M_@_4,Quantum-Well Structures/ Gaas-Alas Superlattices/ Binding-Energy/ Envelope-Function Approximation/ Interface Roughness Scattering/ Valence-Band Discontinuity/ Short- Superlattices/ Low-Temperature Mobility/ Hgte-Cdte Effective-Mass Equation$M_@_42720=t$< J.Phys.Chem.Solids.h=t$<1957c$M_,ln@_nB,c1c$M_,ln@_nB,c249-261=t$< J.Phys.Chem.Solids.h=t$<1957c$M_,ln@_nB,c1c$M_,ln@_nB,c249-261o q?Variational Calculations on a Quantum Well in an Electric-Field?=o q03.3.2K=o qK=o qh=t$<!01.3.1 Electron Band Calculations!hDxN~H.$M_$@_kd6$M_$@_kd 3241-3245 $M_$@_kd%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1983 09.pdfA\$M_$@_kd+457$M_$@_kd2740p;@ 7Bastard, G. //Mendez, E. E. //Chang, L. L. //Esaki, L. 7x;=q97Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987x;=q9'Exciton Binding-Energy in Quantum Wells'x;=q903.1.3x;=q9 "Physical Review B-Condensed Matter"x;=q9 Article$M_@_Ld 1982 Aug 15 $M_@_Ld26$M_@_Ld4$M_@_Ld 1974-1979 $M_@_Ld%A\\As01mesant\Procite Databases\WCS\Articles\Bastard G 1982 08.pdfA$M_@_Ld+520$M_@_Ld2750Vacuum Science & Technology a-Vacuum Films6P= s Article$M_@_|1989$M_@_| 7$Vacuum Science & Technology a-Vacuum Films6P= s Article$M_@_|1989$M_@_| 7$Vacuum Science & Technology a-Vacuum Films6P= s Article$M_@_|1989$M_@_| 7$HxB-10623 Berlin//Germany_='sz̬;Spontaneous Ordering of Arrays of Coherent Strained Islands;='sz̬07.4.2='sz̬ Physical Review Letters='sz̬ Article$M_@_̾ Oct 16, 1995 $M_@_̾75$M_@_̾16$M_@_̾ 2968-2971 $M_@_̾%C\\As01mesant\Procite Databases\WCS\Articles\Shchukin VA 1995 10.pdfC='sz̬*]The energetics of an array of three-dimensional coherent strained islands on a lattice-mismatched substrate is studied. The contribution of the edges of islands to the elastic relaxation energy always has a minimum as a function of the size of an island L, and the total energy E(L) may have a minimum at an optimum size L(opt). Among different arrays of islands on the (001) surface of a cubic crystal, the total energy is minimum for the 2D periodic square lattice with primitive lattice vectors along ''soft'' directions [100] and [010]. This is a stable array of islands which do not undergo ripening.]$M_@_̾+193$M_@_̾,Surfaces/ Growth/ Shape/ Ge$M_@_ 5030<1?Thompson, George H. B.8m=xsGallium Arsenide Lasers|=xs|=xs10.1.2App. Phys. Lett., Vol. 16, pp. 326-327, April, 1970 Rupprecht et al: Stimulated Emission from Ga Al As Diodes at 77.degree.K,IEEE Jour. of Quant. Elect., Vol. QE4, pp. 35, Jan. 1968N~{p<@ h1?DLuttinger, J.M.//Kohn, W.(<=ФtHm<:Motion of Electrons and Holes in Perturbed Periodic Fields:(<=ФtHm<!01.3.1 Elec/=x5tFdMQuantized Conductance o^N~<.;@xVanwees, B. J. //Kouwenhoven, L. P. //Vanhouten, H. //Beenakker, C. W. J. //Mooij, J. E. //Foxon, C. T. //Harris, J. J. x/=x5tFdDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/England/=x5tFdMQuantized Conductance of Magnetoelectric Subbands in Ballistic Point Contacts5/=x5tFd /=x5tFd/=x5tFd04.4.3/=x5tFd "Physical Review B-Condensed Matter"/=x5tFd Article$M_ D @_< D 1988 Aug 15 $M_ D @_< D38$M_ D @_< D5$M_ D @_< D 3625-3627 $M_ D @_< D%B\\As01mesant\Procite Databases\WCS\Articles\Vanwees BJ 1988 08.pdf,$M_ D @_< D$M_ D @_< D+113$M_ D @_< D5140ԫDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandh(=jr ԫԫDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandh(=jr ԫ.62$M_@_|z.10$M_@_|z. 1181-1184 $M_@_|z.%=\\Aeron\Procite Databases\WCS\Articles\Vanwees BJ 1989 03.pdf'@/hH9XXF c^VN~H;@(Vanwees, B. J. //Willems, E. M. M. //Harmans, C. J. P. M//Beenakker, C. W. J. //Vanhouten, H. //Williamson, J. G. //Foxon, C. T. //Harris, J. J. h(=jr ԫDelft Univ Technol,Dept Appl Phys,Pob 5046/2600 Ga ; Philips Res Labs/5600 Ja Eindhoven//Netherlands ; Philips Res Labs/Redhill Rh1 5ha/Surrey/Englandh(=jr ԫYAnomalous Integer Quantum Hall-Effect in the Ballistic Regime With Quantum Point ContactsYh(=jr ԫ04.4.3h(=jr ԫ Physical Review Lettersh(=jr ԫ Article$M_@_|z. 1989 Mar 6 $M_@_|z.62$M_@_|z.10$M_@_|z. 1181-1184 $M_@_|z.%B\\As01mesant\Procite Databases\WCS\Articles\Vanwees BJ 1989 03.pdf,@/hH9XXF(=jr ԫ(=jr ԫ+142$M_@_|z.5160;1?<_Waugh, F. R. //Berry, M. J. //Mar, D. J. //Westervelt, R. M. //Campman, K. L. //Gossard, A. C. _.=vbjHarvard Univ,Div Appl Sci/Cambridge//Ma/02Review Letters.=vbj Article$M_@_vm Jul 24, 1995 $M_@_vm75$M_@_vm4$M_@_vm705-708$M_@_vm%;\\Aeron\Procite Databases\WCS\Articles\Waugh FR 1995 07.pdf;$M_@_vm*We report low-temperature tunneling measurements at zero magnetticles\Waugh FR 1995 07.pdf;$M_@_vm*We report low-temperature tunneling measurements at zero magnet^zN~2.;@<_Waugh, F. R. //Berry, M. J. //Mar, D. J. //Westervelt, R. M. //Campman, K. L. //Gossard, A. C. _.=vbjHarvard Univ,Div Appl Sci/Cambridge//Ma/02138 ; Harvard Univ,Dept Phys/Cambridge//Ma/02138 ; Univ Calif Santa Barbara,Dept Mat/Santa Barbara//Ca/93106.=vbjPSingle-Electron Charging in Double and Triple Quantum Dots With Tunable CouplingP.=vbj04.4.3.=vbj Physical Review Letters.=vbj Article$M_@_vm Jul 24, 1995 $M_@_vm75$M_@_vm4$M_@_vm705-708$M_@_vm%@\\As01mesant\Procite Databases\WCS\Articles\Waugh FR 1995 07.pdf@$M_@_vm*We report low-temperature tunneling measurements at zero magnetic field through double and triple quantum dots with adjustable interdot coupling, fabricated in a GaAs/AlGaAs heterostructure. As the coupling is increased, Coulomb blockade conductance peaks split into two (double dot) or three (triple dot) peaks each. The splitting tracks closely the measured tunnel conductance and experimentally determines the total interaction energy. Coupled double and i.=1?Aspnes, D. E. //Studna, A. A. &=u& )Bell Commun Res Inc/Murray Hill//Nj/07974)&=u& JAnisotropies in the Above Band-Gap Optical-Spectra of Cubic SemiconductorsJ&=u& 06.1.2&=u&  Physical Review Letters&=u& 706518z=msj706518t^N~.݊(=@\\As01mesant\Procite Databases\WCS\Articl݊(=Ү1?Chang, R. P. H.=uU=uU=uU-Hydrogen etching of semiconductors and oxides-=uU08.2.3=uU)Bell Telephone Laboratories, Incorporated)=uU706518=uU US4361461 =uUUS=uU 11/30/1982 =uUCA1184478A1 DE3209066A1 DEBr es\Baba T 1991 06.pdf>$M_|@_, *The spontaneous emission factor of a microcavity DBR surface-emitting laser has been theoretically obtained to investigate the possibility of thresholdless lasing operation. First, we obtained the formulas expressing the spontaneous emission in a three-dimensional microcavity. By introducing the distribution of mode density in wavevector space, it was clearly shown that the radiation pattern of spontaneous emission is deeply modified by the microcavity and is different from that in free space. Based on this result, the spontaneous emission factor and the emission lifetime were calculated as a function of emission spectral width and the size of the active region. It was found that the spontaneous emission factor exceeds 0.1, even though the spectral width is as large as 30 nm when the transverse size is smaller than 0.5-mu-m and the DBR reflectivity is larger than 90%. Its upper limit of 0.5 is determined by the polarizat ion probability of a linear polarized mode. In this condition, all of the energy from the spontaneous emission is taken out in the longitudinal direction. In addition, the averaged spontaneous emissio n lifetime in the microcavity decreases to 0.09 times that in a large bulk if the spectral width is less than 0.5 nm, for example, by employing the excitonic transition. The enhancement of the spontan eous emission factor and the reduction of lifetime may lead to thresholdless lasing operation, high efficiency, high speed, and good spatial coherency of the surface-emitting laser.$M_| @_, +122$M_|@_, ,Cavity/ Array/ Gain$M_|@_, 2290U-Hydrogen etching of semiconductors and oxidesGuU+22=uU63180!N~  ݊(=@Chang, R. P. H.=uU=uU=uU-Hydrogen etching of semiconductors and oxides-=uU08.2.3=uU)Bell Telephone Laboratories, Incorporated)=uU706518=uU US4361461 =uUUS=uU 11/30/1982 =uUCA1184478A1 DE3209066A1 DE3209066C2 FR2501909A1 FR2501909B1 GB2094720A1 GB2094720A GB2094720B2 GB2094720B JP57162338A2 NL8201041A US4361461=uUEUS3940506 US4094732 US4227975 US4266986 US4284689 US4285762 US4285763E=uU"Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide by W. Kern, RCA Review, vol. 39, pp. 278-294, 1978.; Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF.sub.4 -H.sub.2 by L. M. Ephrath, Journal of the El"=uU"US4544444 US4645683 US4663820 US4731158 US4778562 US4778776 US4965173 US4981811 US4992134 US5028560 US5133830 US5145554 US5194119 US5236537 US5286340 US5310697 US5376591 US5399230 US5484749 US5626921 US5861059 US6379576=uU%;\\As01mesant\Procite Databases\WCS\Patents\US04361461__.pdf;=uU'."H01L 21/306, B44C 1/22, C03C 15/0, C03C 25/6".L=uU+22=uU63180 i.=w1?3People, R. //Wecht, K. W. //Alavi, K. //Cho, A. Y. 3b=0u'Bell Tel Labs Inc/Murray Hill//Nj/07974'b=0uMeasgs of the Optical CommuN~. i.=@3People, R. //Wecht, K. W. //Alavi, K. //Cho, A. Y. 3b=0u'Bell Tel Labs Inc/Murray Hill//Nj/07974'b=0uMeas urement of the Conduction-Band Discontinuity of Molecular-Beam Epitaxial Grown In0.52al0.48as/In0.53ga0.47as, N-N Heterojunction by C-V Profilingb=0u02.1.3 A pplied Physics Lettersb=0u Article#@_@_ܺ,!1983#@_@_ܺ,!43#@_@_ܺ, !1#@_@_ܺ,!118-120#@_@_ܺ,!%B\\As01mesant\Procite Databases\WCS\Articles/People R 1983 0007.PDFB+215#@_ @_ܺ,!1480!݊(=@Umeda, J.//Kajimura, Takashi!=.q8!=.q8!=.q8Semiconductor laser device!!=.q810.5.5!=.q8 Hitachi, Ltd. !=.q8252865!=.q8 US4369513" Santa Barbara,Dept Elect & Comp Engn/Santa5 }=(r`Q[Investigation of Reactive Ion Etching Induced Damage in GaAs-AlGaAs Quantum Well Structures[ }"=(r`Q08.2.2y=(r`Qy=(r`Q (Journal of Vacuum Science & Technology B( }=(r`Q Article"$M_L@_|4~ 1988 NOV-DEC $M_L@_|4~6$M_L@_|4~6$M_L@_|4~ 1906-1910 ?oN~/..!S04369513__.pdf;!=.q8' H01S 3/19 !=.q8+28!=.q863190";@ZWong, H. F. //Green, D. L. //Liu, T. Y. //Lishan, D. G. //Bellis, M. //Hu, E. L. //Petroff, P. M. //Holtz, P. O. //Merz, J. L.  }=(r`Q5Univ Calif" Santa Barbara,Dept Elect & Comp Engn/Santa5 }=(r`Q[Investigation of Reactive Ion Etching Induced Damage in GaAs-AlGaAs Quantum Well Structures[ }"=(r`Q08.2.2y=(r`Qy=(r`Q (Journal of Vacuum Science & Technology B( }=(r`Q Article"$M_L@_|4~ 1988 NOV-DEC $M_L@_|4~6$M_L@_|4~6$M_L@_|4~ 1906-1910 "$M_L@_|4~%?\\As01mesant\Procite Databases\WCS\Articles\Wong HF 1988 11.pdf?$M_L@_|4~+117$M_L@_|4~5210#<Ү1?#Kirkman, Earl L.//Bowers, Gerald M.#=xsContinuous Deposition Reactor=xs08.3.1==x#s US3785853 =xscUS2295928 US2376980 US2579737 US3147135 US3576247 US3598082 US3645545 US3659551 US3672948 US3709672c=xs#"US4512391 US4664743 US4901667 US4913090 US5258075 US5458918 US5730802 US5819684 US5976259 US5997588 US6204197 US6230650 US4681773 US4693211 US4793911 US4798166 US4941429 US5061356 US55251=RsȒ Article/ $M_8 : @_: z=/ 1980/ $M_8 : @_: z=/ 51@_: z=/ 519i)Y.4$;@d8Wood, C. E. C. //Metze, G. //Berry, J. //Eastman, L. F. 8=RsȒdCornell Univ,Dept Elect Engn/Ithaca//Ny/14853 ; Cornell Univ,Natl Res & Resources$ Facility Submicrond=RsȒIComplex Free-Carrier Profile Synthesis by Atomic-Plane Doping of MBE GaAsI=RsȒ06.3.3$=RsȒ Journal of Applied Physics=RsȒ Article/ $M_8 : @_: z=/ 1980/ $M_8 : @_: z=/ 51$/ $M_8 : @_: z=/ 1/ $M_8 : @_: z=/ 383-387/ $M_8 : @_: z=/ %@\\As01mesant\Procite Databases\WCS\Articles/Wood CEC 1980 01.pdf@$\=RsȒ+179/ $M_8 : @_: z=/ 5220%~o>@ VShan, W. //Schmidt, T. J. //Yang, X. H. //Hwang, S. J. //Song, J. J. //Goldenberg, B. V =wOklahoma State Univ,Dept Phys/Stillwater//Ok/74078 %; Oklahoma State Univ,Ctr Laser Res/Stillwater//Ok/74078 ; Honeywell Inc,Ctr Technol/Bloomington//Mn/55420 =wfTemperature-Dependence of Interband-Transitions in %GaN Grown by Metalorganic Chemical-Vapor-Depositionf =w01.3.3 Electron Bandgaps =w Applied Physics Letters %=w Article$M_()@_) Feb 20, 1995 $M_()@_) 66$M_()@_)8$M_(&<j=?%Collins, Neil E.//Neville, Raymond R.%0m=xs,Solid State Lamp ConstructionH=xs,H=xs,=xs,"RN~2+,' ArticleHF Jan 1, 1993 HF 73HF1HF'189-204HF%A\\As01mesant\Procite Databases\WCS\Articles/Powell RC 1993 01.pdfAHF*S Reactive-ion molecular-beam epitaxy ha's been used to grow epitaxial hexagonal-structure alpha-GaN on Al2O3(0001) and Al2O3(0112BAR) substrates and metastable zinc-blende-structure beta-GaN on MgO(001) under the following conditions: growt'h temperature T(s) = 450-800-degrees-C; incident N2+/Ga flux ratio J(N2+)/J(Ga) = 1-5; and N2+ kinetic energy E(N2+) = 35-90 eV. The surface structure of the alpha-GaN films was (1 X 1), with an almos't-equal-to 3% contract ion in the in-plane lattice constant for films grown on Al2O3(0001), while the beta-GaN films exhibited a 90-degrees-rotated two-domain (4 X 1) reconstruction. Using a combinati'on of in situ reflection high-energy electron diffraction, double-crystal x-ray diffraction, and cross-sectional transmission electron microscopy, the film/substrate epitaxial relationships were deter' mined to be: (0001)GaN parallel-to (0001)Al2O3 with [2110BAR]GaN parallel-to [1100BAR]Al2O3 and [1100BAR]GaN parallel-to [1210BAR]Al2O3, (2110BAR)GaN parallel-to (0112BAR)Al2O3 with [0001]GaN parallel' -to [0111BAR]Al2O3 and [0110BAR]GaN parallel-to [2110BAR]A12O3, and (001)GaN parallel-to (001)MgO with [001]GaN parallel-to [001]MgO. Films with the lowest extended defect number densities (n(d) congr(;h1?,BBosio, C. //Staehli, J. L. //Guzzi, M. //Burri, G. //Logan, R. A. B@Z=PoRgEcole Polytech Fed Lausanne,Inst Phys Appl,Ph Ecublens/Ch- ; Univ Lausa(_\Ext:5420|^N~2$.' -to [0111BAR]Al2O3 and [0110BAR]GaN parallel-to [2110BAR]A12O3, and (001)GaN parallel-to (001)MgO with [001]GaN parallel-to [001]MgO. Films with the lowest extended defect number densities (n(d) congr' uent-to 10(10) cm-2 threading dislocations with Burgers vector a0/3[1120BAR]) and the smallest x-ray-diffraction omega rocking curve widths (5 min) were obtained using Al2O3(0001) substrates, T(s) gre' ater-than-or-equal-to 650-degrees-C, J(N2+)/J(Ga) greater-than-or-equal-to 3.5, and E(N2+) = 35 eV. Higher N2+ acceleration energies during deposition resulted in increased residual defect densities. ' In addition, E(N2+) and J(N2+)/J(Ga) were found to have a strong effect on film growth kinetics through a competition between collisionally induced dissociative chemisorption of N2 and stimulated deso'rption of Ga as described by a simple kinetic growth model. The room-temperature resistivity of as-deposited GaN films grown at T(s) = 600-700-degrees-C with E(N2+) = 35 eV increased by seven orders o'f magnitude, from 10(-1) to 10(6) OMEGA cm, with an increase in J(N2+)/J(Ga) from 1.7 to 5.0. Hall measurements on the more conductive samples yielded typical electron carrier concentrations of 2 X 10'(18) cm-3 with mobilities of 30-40 cm2 V-1 s-1. The room-temperature optical band gaps of alpha-GaN and beta-GaN were 3.41 and 3.21 eV, respectively.S HF+237'HFHF,Vapor-Phase Epitaxy/ Energy Particle Bombardment/ Low-Temperature Growth/ Gallium Nitride Films/ Ain Buffer Layer/ Electrica(;h1?,BBosio, C. //Staehli, J. L. //Guzzi, M. //Burri, G. //Logan, R. A. B@Z=PoRgEcole Polytech Fed Lausanne,Inst Phys Appl,Ph Ecublens/Ch- ; Univ Lausa(_\Ext:5420|^N~+%=w Article$M_()@_) Feb 20, 1995 $M_()@_) 66$M_()@_)8$M_(%)@_)985-987$M_()@_)%>\\As01mesant\Procite Databases\WCS\Articles/Shah W 1995 02.pdf/0=w0=w%0=w+124$M_()@_),JMolecular-Beam Epitaxy/ Thin-Films/ Gallium Nitride/ Silicon/ Diodes/ GaasJ$M_()%@_)3510&<@%Collins, Neil E.//Neville, Raymond R.%0m=xs,Solid State Lamp ConstructionH=xs,H=xs,&12.4.10m=xs,2185500m=xs, US3805347 0m=xs,US0m=xs,& 4/23/1974 0m=xs,6BE0760991A DE2062208A FR2074421A5 GB1338765A US380534760m=xs,'US3596136 US3501676 US3458779 US3510732'&0m=xs,6Roy et al., IBM Tech. Bull., Vol. 7, No. 1, June 1964.60m=xs,"US4019196 US4032963 US4144635 US4253735 US4398240 US4471414 US460'p<=\? 8Powell, R. C. //Lee, N. E. //Kim, Y. W. //Greene, J. E. 8HFUniv Illinois,Coordinated Sci Lab,Dept Mat Sci,1101 W Springfield Ave/Urbana//Il/'61801 ; Univ Illinois,Mat Sci Res Lab/Urbana//Il/61801HFHeteroepitaxial Wurtzite and Zincblende Structure GaN Grown by Reactive-Ion Molecular-Beam Epitaxy : Grat Sci,1101 W Springfield Ave/Urbana//Il/(_\Ext:5420@(_\Ext:5420} =m~..(@_\Ext:5420)<@Caywood, John Millard=`sCharge Coupled Device IR Imager=`s12.3.4=`s)570160=`s US3806729 =`sUS=`s 4/23/1974 =`s) US3806729 =`sUS3484663 US3699339 US3746883=`sSelf-Scanned Image Sensors . . . by Weimer et al., IEEE Trans. on Elect)ron Devices, Nov. 1971, Vol. 18, No. 11, pp. 996-1003 Solid State Imaging Emerges from Charge Transport, RCA Reprint from Electronics, Feb. 28, 1972, written by Kovac et al.=`)s"?US3937942 US4001501 US4178522 US4224521 US4301471 US4315159 US4596930 US4656519 US4935636 US5001530 US5371384 US5430294 US4142925 US4176369 US4409483 US4410811 US4443701 US4471378 US)4496982 US4498105 US4675549 US4737642 US5258619 US5293035 US3883437 US3886359 US4054797 US4061916 US4079507 US4096512 US4115692 US4119841?=`s%;\\As01mesant\Procite) Databases\WCS\Patents\US03806729__.pdf;=`s' G01T 1/24 =`s+32=`s210*=t 83Ultrawide-Band Long-Wavelength P-I-N Photodetectors3=t 811.3.1=t 8 Journal of Lightwave Technology*=t 83Ultrawide-Band Long-Wavelength P-I-N Photodetectors3=t 811.3.1=t 8 Journal of Lightwave TechnologySci Univ Tokyo,Fac Sci & Technol,2641 Yamazaki,Noda,Chiba ; Waseda Univ,Dept Elect rAq17.L+\\As01mesant\Procite Databases\WCS\Articles\Chichibu S 1997 05.pdfB$M_|l@_dW|*Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commer+cially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x < 0.1) was assigned to the recombination of excitons localized at the potential minima originatin+g from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states. (C) 1997 American Institute of Physics.$M+_|l@_dW|+135$M_|l@_dW|,Light-Emitting Diodes/ GaN$M_|l@_dW|2990,݊(=@Tsang, Won-Tien==v+Double barrier double heterostructure laser+==v10.1.1==v,)Bell Telephone Laboratories, Incorporated)==v706518==v US4438446 ==vUS,==v 3/20/1984 ==vCA1182890A1 DE3220214A1 FR2507014A1 FR2507014B1 GB2099624A1 GB2099624A GB2099624B2 GB2099624B JP57199290A,2 NL8202197A US4438446==v US4328469 ==v"Tsang, ""Very Low Current Threshold GaAs-Al.sub.x Ga.sub.1-x As . . ."", Appl. P-݊(=7j=?Kitamura, Takashi/=ppWв/Apparatus for controlling the quantity of light//=ppWв12.6.2i=ppWв US4443695 /=ppWвJP+[~yDT,==v 3/20/1984 ==vCA1182890A1 DE3220214A1 FR2507014A1 FR2507014B1 GB2099624A1 GB2099624A GB2099624B2 GB2099624B JP57199290A,2 NL8202197A US4438446==v US4328469 ==v"Tsang, ""Very Low Current Threshold GaAs-Al.sub.x Ga.sub.1-x As . . ."", Appl. P,hys. Lett., vol. 36, No. 1, Jan. 1, 1980, pp. 11-14.; Tsang et al., ""The Effect of Substrate Temperature . . ."", Appl. Phys. Lett., vol. 36, No. 2, Jan. 15, 1980, pp. 118-120.",==v"US4598306 US4630083 US4634928 US4639275 US4639999 US4671830 US4678989 US4760579 US4766472 US4829357 US4847573 US4865655 US4912533 US4933728 US4947223 US4956682 US4968642 US5027164, US5181084 US5555271==v%;\\As01mesant\Procite Databases\WCS\Patents\US04438446__.pdf;==v'"H01S 3/18, H01S 3/19",S==v+20==v63210-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44IyN~L\-݊(=@Kitamura, Takashi/=ppWв/Apparatus for controlling the quantity of light//=ppWв12.6.2i=-ppWвCanon Kabushiki Kaisha/=ppWв87490/=ppWв US4443695 /=ppWвJP-/=ppWв 4/17/1984 /=ppWв|DE3102185A1 DE3153710C2 JP03013586B4 JP03063073B4 JP56105686A2 JP56106259A2 JP56107264A2 JP57023289A2 JP63042432B4 US44-43695|/=ppWвUS4059833 US4092530/=ppWв"]US4592057 US4605848 US4692884 US4695714 US4710779 US4717925 US4757191 US4809025 US482106-5 US4890288 US4894524 US4935615 US4937799 US4950889 US4958915 US4965444 US4967066 US4978849 US5029245 US5043745 US5105077 US5130524 US5151586 US5159184 US5225850 US5270849 US5282217 US5543611 US556128-5 US5809052 US5946414 US5953690 US6097419 US6100908 US6292206]/=ppWв%;\\As01mesant\Procite Databases\WCS\Patents\US04443695__.pdf;/=ppW.ltilayer avalanche photodetector with energy step backsHp=gsx11.3.2p=gsxAt&T Bell Laboratoriesp=gsx.706518p=gsx US4476477 p=gsxUSp=gsx 10/9/1984 p=gsx.CA1197599A1 DE3371583C0 EP0087299A2 EP0087299A3 EP0087299B1 GB2115610A1 GB2115610A GB2115610B2 GB2115610B GB8304712A0 GB8304712A JP06005784B4 JP58157179A2 US4476477p=2115610A1 GB2115610A GB2115610B2 GB2115610B GB8304712A0 GB8304712A JP06005784B4 JP58157179A2 US4476477p=^N~OT.-}в'"G01D 15/14, G01J 1/32"/=ppWв+35/=ppWв63220.݊(=@,Capasso, F.//Tsang, Won-Tien//Williams, G.F.)p=gsxp=gsxp=gsxHGraded bandgap mu.ltilayer avalanche photodetector with energy step backsHp=gsx11.3.2p=gsxAt&T Bell Laboratoriesp=gsx.706518p=gsx US4476477 p=gsxUSp=gsx 10/9/1984 p=gsx.CA1197599A1 DE3371583C0 EP0087299A2 EP0087299A3 EP0087299B1 GB2115610A1 GB2115610A GB2115610B2 GB2115610B GB8304712A0 GB8304712A JP06005784B4 JP58157179A2 US4476477p=.gsx1US4203124 US4213138 US4231049 US4383269 US43908891p=gsx-"R. J. McIntyre, ""Multiplication Noise in Uniform Avalanche Diodes,"" IEEE Transactions /Bell Labs/Murray Hill//Nj/07974G8=xYp."*Multiple Quantum-Well Reflection Modulator*8=xYp."11.4.18=xYp."/8=xYp." Applied Physics Letters8=xYp." Article@$M_I@_@ 1987 APR 27 @$M_I/@_@50@$M_I@_@17@$M_I@_@ 1119-1121 @$M_I@_@%:\\Aeron\Procite Databases\WCS\Articles\Boy/d GD 1987 04.pdf'@$M_I@_@@$M_I@_@+106@$M_I@_@5470@_@5470Cs3cb.l0US4852111 US4860299 US4862470 US4868838 US4872174 US4887274 US4894836 US4907239 US4987096 US4989213 US5065404 US5181218 US5319661 US5470786 US6060785 US6096571 US6297124 x=s0%;\\As01mesant\Procite Databases\WCS\Patents\US04480331__.pdf;x=s' H01S 3/19 x=s+27x=s0632401;@Brennan, K. //Hess, K. =t7cUniv Illinois,Dept Elect Engn/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801c1=t7*High-Field Transport in GaAs, InP and InAs*=t7E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsE1=t7 Solid-State Electronics=t7 Article$M_@_ <1984$M_@_ <271$M_@_ <4$M_@_ <347-357$M_@_ <%>\\As01mesant\Procite Databases\WCS\Articles/Brennan K 1984.pdf,1{$M_@_ <$M_@_ <+132$M_@_ <5510q<ԫ#Mit,Lincoln Lab/Lexington//Ma/02173#x32=q<ԫAOscillations up to 420 Ghz in GaAs/AlAs Resonant Tunneling DiodesAx3=q<ԫ09.2.4x3=q<ԫ Applied Physics Letters2x3=q<ԫ Article $M_ @_%  1989 Oct 23C=q<ԫC=q<ԫ55 y 9i!dt2;@OBrown, E. R. //Sollner, T. C. L.//Parker, C. D. //Goodhue, W. D. //Chen, C. L. Ox3=q<ԫ#Mit,Lincoln Lab/Lexington//Ma/02173#x32=q<ԫAOscillations up to 420 Ghz in GaAs/AlAs Resonant Tunneling DiodesAx3=q<ԫ09.2.4x3=q<ԫ Applied Physics Letters2x3=q<ԫ Article $M_ @_%  1989 Oct 23C=q<ԫC=q<ԫ55 2$M_ @_% 17 $M_ @_%  1777-1779 $M_ @_% %@\\As01mesant\Procite Databases\WCS\Articles\Brown ER 1989 10.pdf,2}HhH9X2XF2C=q<ԫ+164 $M_ @_% 56403tures followed by a higher temperature growth of the rest of the film. GaN films grown on a single crystalline GaN buffer have the zinc blende structure, while those grown on a polycrystalline or amor3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially grow3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially grow3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially grow3[$M_,df@_f,[%5\\Aeron\Procite Databases\WCS\Articles/Lei T 1991.pdf5c=t*Zinc blende and wurtzitic GaN films have been epitaxially growCsN~l.3p<@ YLei, T. //Fanciulli, M. //Molnar, R. J. //Moustakas, T. D. //Graham, R. J. //Scanlon, J. Yc=tBoston Univ,Molec Beam Epitaxy Lab,44 Cummington3 St/Boston//Ma/02215 ; Arizona State Univ,Ctr Solid Sci/Tempe//Az/85287 ; Exxon Res & Engn Co/Annandale//Nj/08801c=tYEpitaxial-Growth of Zinc Blende and Wurtziti3c Gallium Nitride Thin-Films on (001) SiliconYc=t07.5.4c=t Applied Physics Lettersc=t3 Article[$M_,df@_f,[1991[$M_,df@_f,[ 59[$M_,df@_f,[8[$M_,df@_f,[944-9463[$M_,df@_f,[%:\\As01mesant\Procite Databases\WCS\Articles/Lei T 1991.pdf:c=t*Zinc blende and wurtzitic GaN films have been epitaxially3 grown onto (001)Si by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, using a two-step growth process. In this process a thin buffer layer is grown at relatively low te4asmall Quantum-Well Boxes5/=u03.5.1/=u Physical Review Letters/=u Article4U$M_^`@_`dU 1987 Sep 7 U$M_^`@_`dU59U$M_^`@_`dU10U$M_^`@_`dU 1140-1143 U$4M_^`@_`dU%<\\Aeron\Procite Databases\WCS\Articles\Bryant GW 1987 09.pdf'U$M_^`@_`dUU$M_^`@_`dU+165U$M_^`@4_`dU5770|^N~U.5;@Bryant, G. W. 0.=`$uC5Mcdonnell Douglas Corp,Mcdonnell Douglas Res Labs,Pob50.=`$uC0Hydrogenic Impurity States 5in Quantum-Well Wires00.=`$uC03.4.10.=`$uC0.=`$uC "Physical Review B-Condensed Matter"0.5=`$uC Article_$M_hj@_j4_ 1984 Jun 15 _$M_hj@_j4_29_$M_hj@_j4_12_$M_h5j@_j4_ 6632-6639 _$M_hj@_j4_%A\\As01mesant\Procite Databases\WCS\Articles\Bryant GW 1984 06.pdf,_$M_hj@_j4__$M_hj5I@_j4_+124_$M_hj@_j4_578069+41=`s220\\Aeron\Procite Databases\WCS\Patents\US03808435__.pdf6=`s' G01T 1/24 =`s69+41=`s2203883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50169483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50169483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50169483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US501N~|6<@3Buss, Dennis D.//Bate, Robert T.//Kinch, Michael A.3=`s/Infara Red Quantum Differential Detector System=`s6.=`s12.3.1=`s570160=`s US3808435 =`sUS6=`s 4/30/1974 =`s US3808435 =`sUS3660663 US3723642=`s6"US4080532 US4142198 US4467340 US4479139 US4806761 US4868902 US5304500 US5430294 US4142206 US4190851 US4531055 US4536658 US4929913 US4943491 US5828408 US4054797 US4068124 US4213137 US4316103 US44069483 US4443701 US4757200 US4792681 US5168338 US5227656 US3883437 US3886359 US3902066 US3904879 US3944849 US4013889 US4028548 US4051364 US4197469 US4197553 US4331874 US4403148 US4570329 US4661168 US50162343 US5093589=`s%;\\As01mesant\Procite Databases\WCS\Patents\US03808435__.pdf;=`s' G01T 1/24 =`s6>+41=`s2207stkorperforsch,Hochfeld Magnetlab,Bp ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Acad Sci Ussr,Inst Solid State Phys/Chernogolovka ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart7stkorperforsch,Hochfeld Magnetlab,Bp ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Acad Sci Ussr,Inst Solid State Phys/Chernogolovka ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart@_\nOt 1056-1059 $M_td@_\nOt%<\\Aeron\Procite Databases\WCS\Articles\Buhmann H 1990 08.pdf<7W$M_td@_\nOt+114$M_td@_\nOt57904N~pt)7;@wBuhmann, H. //Joss, W. //Vonklitzing, K. //Kukushkin, I. V. //Martinez, G. //Plaut, A. S.//Ploog, K. //Timofeev, V. B. w=t]Max Planck Inst Fe7stkorperforsch,Hochfeld Magnetlab,Bp ; Cnrs,Serv Natl Champs Intenses/F-38042 Grenoble//France ; Acad Sci Ussr,Inst Solid State Phys/Chernogolovka ; Max Planck Inst Festkorperforsch/W-7000 Stuttgart7=t]UMagnetooptical Evidence for Fractional Quantum Hall States Down to Filling Factor 1/9U=t]02.6.3Ю7=t] Physical Review Letters=t] Article$M_td@_\nOt 1990 AUG 20 $M_td@_\nOt657$M_td@_\nOt8$M_td@_\nOt 1056-1059 $M_td@_\nOt%A\\As01mesant\Procite Databases\WCS\Articles\Buhmann H 1990 08.pdfA7\$M_td@_\nOt+114$M_td@_\nOt57908rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 78rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 78rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 78rs2=`sp̬ Article$M_@_|  1991 FEB 18 $M_@_| 66$M_@_| 7"RN~..:;@VJoyce, B. A. //Dobson, P. J. //Neave, J. H. //Woodbridge, K. //Zhang, J. //Bolger, B. V({=$t,Philips Res Labs/Redhill Rh1 5ha/Surrey/England ; U:niv London Imperial Coll Sci & Technol,Dept Phys/London ; Philips Nederlandse Bedrijven Bv,Philips Res({=$t,wRHEED Studies of Heterojunction and Quantum-Well Forma:tion During MBE Growth - From Multiple-Scattering to Band Offsetsw({=$t,06.1.2({=$t, Surface Science({=$t:, Article$M_L@_|241986 Mar$M_L@_|24168$M_L@_|241-3$M_L@_|:24423-438$M_L@_|24%@\\As01mesant\Procite Databases\WCS\Articles/Joyce BA 1995 06.pdf@+120$M_L@_|246020;irectly Modulated Semiconductor-LasersH =`vH.10.2.5 =`vH. Electronics Letters =`vH. Article;irectly Modulated Semiconductor-LasersH =`vH.10.2.5 =`vH. Electronics Letters =`vH. Article 1038-1040 ;'$M_'!'@_!'<'%:\\Aeron\Procite Databases\WCS\Articles/Koch TL 1984 12.pdf:'$M_'!'@_!'<'+172'$M_'!'@_!'<'6030<;w1?Kuech, T. F. //Wolford, D. J. //Potemski, R. //Bradley, J. A. //Kelleher, K. H. //Yan, D. //Farrell, J. P. //Lesser, P. M. S. //Pollak, F. H. K=0q>ters =`vH. ArticleQ N~ =etallic Chemical Vapor-Depositionpp=ht&_06.4.4p=ht&_ Physical Review Lettersp=ht&_ Article=$M_@_ I Feb 3, 1992 $M_@_ I68$M_@_ I5$M_@_ I627-630=$M_@_ I%@\\As01mesant\Procite Databases\WCS\Articles\Kamiya I 1992 02.pdf@$M_@_ I*vWe report the first observation of reconstructions on sem=iconductor surfaces in atmospheric pressure (AP) environments. Using reflectance-difference spectroscopy we show that the primary reconstructions that occur on (001) GaAs in ultrahigh vacuum (UHV) als=o occur under AP H-2, He, and N2. These results demonstrate that dimer formation is not restricted to surfaces in UHV and justify the use of UHV studies to determine (001) GaAs chemistry during AP org=anometallic chemical vapor deposition (OMCVD). Reconstructions observed during OMCVD growth are inconsistent with previous models and provide new insights concerning growth.v$M_=@_ I+153$M_@_ I,sMolecular-Beam Epitaxy/ Gaas(100) Surfaces/ Layer Epitaxy Growth/ Semiconductors/ Superlattices/ Anisotropies/ Alass$M_= @_ I3370> =s287565 =s US3809908 =sUS =s5/7/1974> =s287565 =s US3809908 =sUS =s5/7/1974N~g.<bDependence of the AlxGa1-xAs Band Edge on Alloy Composition Based on the Absolute Measurement of XbK=0q>ԫ02.1.3K=0q>ԫ Applie<d Physics LettersK=0q>ԫ ArticleB$M_KM@_MB 1987 Aug 17 B$M_KM@_MB51B$M_KM@_M<B7B$M_KM@_MB505-507B$M_KM@_MB%@\\As01mesant\Procite Databases\WCS\Articles\Kuech TF 1987 08.pdf,XhH9X<<eXF<K=0q>ԫ+115B$M_KM@_MB6040=i.=@* TKamiya, I. //Aspnes, D. E. //Tanaka, H. //Florez, L. T. //Harbison, J. P. //Bhat, R.Tp=ht&_Bellcore,331 Newman Springs Rd/Red Bank//Nj/07701 ; U=niv Illinois,Dept Phys/Urbana//Il/61801 ; Fujitsu Labs Ltd/Atsugi 24301//Japanp=ht&_pSurface Science at Atmospheric-Pressure: Reconstructions (001) GaAs in Organom=etallic Chemical Vapor-Depositionpp=ht&_06.4.4p=ht&_ Physical Review Lettersp=ht&_ Article=$M_@_ I Feb 3, 1992 $M_@_ I68$M_@_ I5$M_@_ I627-630> =s287565 =s US3809908 =sUS =s5/7/1974+[~><@Clanton, John S. =s!Electro Optical Transmission Line=s =s12.2.1> =s287565 =s US3809908 =sUS =s5/7/1974> =sFCA1006612A1 ES0427720A1 FR2235549A1 FR2235549B1 JP50043948A2 US3809908F =s'US2785385 US3143655 US3385970 US3629590'> =s"US4027152 US4042891 US5452387 US6004044 US6213651 US6220873 US3987257 US4001578 US4677290 US4720630 US4901141 US5448676 US6201704 US6203333 US4055058 US4061577 US40>71753 US4075512 USRE36820 US6179627 US3903497 US3950075 US4109998 US4161650 US4178068 US4211929 US4238648 US4291943 US4294682 US4307934 US4427879 US4545075 US4570079 US4591663 US4600938 US4600939 US46?le,Englandh=t>8RTwo-Dimensional Photonic-Bandgap Structures Operating at Near Infrared WavelengthsR=t>805.3.3?=t>8 Nature=t>8 Article$M_@_H8 Oct 24, 1996 $M_@_H8383$M?_@_H86602$M_@_H8699-702$M_@_H8%<\\Aeron\Procite Databases\WCS\Articles/Krauss TF 1996 10.pdf'$M?_@_H8$M_@_H8*PHOTONIC crystals are artificial structures having a periodic dielectric structure designed to influence the behaviour of photons in *PHOTONIC crystals are artificial structures having a periodic dielectric structure designed to influence the behaviour of photons in ^N~F.>00940 US4614873 US4639772 US4648280 US4779948 US4834490 US6220878 US6267606 =s%;\\As01mesant\Procite Databases\WCS\Patents\US03809908__.pdf; >=s'G02F 1/28; H01P 1/32 =s+44 =s230?;@+Krauss, T. F. //Delarue, R. M. //Brand, S. +=t>8hUniv Glasgow,Dept Elect & Elect Engn,Opt Res Grp,Glasgow ; Univ Durham,Dept Phys,Durham Dh1 3?le,Englandh=t>8RTwo-Dimensional Photonic-Bandgap Structures Operating at Near Infrared WavelengthsR=t>805.3.3?=t>8 Nature=t>8 Article$M_@_H8 Oct 24, 1996 $M_@_H8383$M?_@_H86602$M_@_H8699-702$M_@_H8%A\\As01mesant\Procite Databases\WCS\Articles/Krauss TF 1996 10.pdf,@;Ү1?6Liau, Z. L. //Brown, W. L. //Homer, R. //Poate, J. M. 6=7x<30DCaltech/Pasadena//Ca/91125 ; Bell Tel Labs Inc/Murray Hill//Nj/07974D@=7x<30CSurface-Layer Composition Changes in Sputtered Alloys and CompoundsC=7x<3008.3.1=7x<30 Applied Physi@cs Letters=7x<30 Article $M_@_a 1977 $M_@_a 30 $M_@_a 12=tZ'Mechanism  Article $M_@_a 1977 $M_@_a 30 $M_@_a 12ML| <l./? ructures with other optical and optoelectronic devices.$M_@_H8+128$M_@_H8,Gaps$M_@_H86060@;@6Liau, Z. L. //Brown, W. L. //Homer, R. //Poate, J. M. 6=7x<30DCaltech/Pasadena//Ca/91125 ; Bell Tel Labs Inc/Murray Hill//Nj/07974D@=7x<30CSurface-Layer Composition Changes in Sputtered Alloys and CompoundsC=7x<3008.3.1=7x<30 Applied Physi@cs Letters=7x<30 Article $M_@_a 1977 $M_@_a 30 $M_@_a 12@ $M_@_a 626-628 $M_@_a %<\\As01mesant\Procite Databases\WCS\Articles/Liau ZL 1977.pdf< $M_@_a +117@. $M_@_a 6080A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_A@_P< 2395-2405 $M_@_P<%:\\Aeron\Procite Databases\WCS\Articles//Ogio T 1980 12.pdf:=tZ+196$M_"RL| /C>>&$M_l\@_T>>$M_l\@_T>> $M_l\@_T>>.$M_l\@_T>>*%Monte Carlo simulations of electronC transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (Al(x)Ga(1-x)As, In(x)Ga(1-x)As, Ga(x)In(1-x)P), and hole tranCsport in Si have been performed at two lattice temperatures (77 and 300 K). The model employs band structures obtained from local empirical pseudopotential calculations and particle-lattice scatteringC rates computed from the Fermi Golden Rule accounting for band-structure effects. Intervalley deformation potentials significantly lower than those previously reported in the Monte Carlo literature arC e needed to reproduce available experimental data. This is attributed to the more complicated band structures we have adopted, particularly around the L- and X-symmetry points in most materials. DespiD;k=?zMishra, U. K. //Brown, A. S. //Rosenbaum, S. E. //Hooper, C. E. //Pierce, M. W. //Delaney, M. J. //Vaughn, S. //White, K. z2='sU̬CHughes Res LabsD/Malibu//Ca/90265 ; Hughes,S&Cg/El Segundo//Ca/00000C2='sU̬SMicrowave Performance of A1inas-GaInAs Hemts With 0.2-Mu-M and 0.1-Mu-M Gate LengthS2D='sU̬09.1.42='sU̬ IEEE Electron Device Letters2='sU̬ Article$M_@_ܝT41988 DecD$M_@_ܝT49$M_@_ܝT412$M_@_ܝT4647-649$M_@_ܝT4%<\\Aeron\Procite Dat^N~/C8r>@XFischetti, M.V.ؚ=JwD<Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zincblende StructuresC. 1. Homogeneous Transportؚ=JwD<E01.6.3 Fast Phonon and Defect Scattering: Response to Electric FieldsEؚ=JwD< %IEEE Transactions oCn Electron Devices%ؚ=JwD<1991$M_l\@_T>>38$M_l\@_T>>3$M_l\@_T>>634C-649$M_l\@_T>>%D\\As01mesant\Procite Databases\WCS\Articles\Fischetti MV 1991 03.pdfD$M_l\@_T>>' 0018-9383 $M_l\@_TC>>)xEnglish IBM CORP, Thomas J Watson Res Ctr, Div Res, POB 218, Yorktown Hts, NY, 10598 EY647 Copyright 2003 SciSearch Plus$M_l\@_T>> $M_l\@_TD;k=?zMishra, U. K. //Brown, A. S. //Rosenbaum, S. E. //Hooper, C. E. //Pierce, M. W. //Delaney, M. J. //Vaughn, S. //White, K. z2='sU̬CHughes Res LabsD/Malibu//Ca/90265 ; Hughes,S&Cg/El Segundo//Ca/00000C2='sU̬SMicrowave Performance of A1inas-GaInAs Hemts With 0.2-Mu-M and 0.1-Mu-M Gate LengthS2D='sU̬09.1.42='sU̬ IEEE Electron Device Letters2='sU̬ Article$M_@_ܝT41988 DecD$M_@_ܝT49$M_@_ܝT412$M_@_ܝT4647-649$M_@_ܝT4%<\\Aeron\Procite Dat$M_@_ܝT4%<\\Aeron\Procite Dat^N~ //D$M_@_ܝT49$M_@_ܝT412$M_@_ܝT4647-649$M_@_ܝT4%A\\As01mesant\ProcitDe Databases\WCS\Articles\Mishra UK 1988 12.pdfA='sU̬+117$M_@_ܝT46120Eq;@ Greene, R. L. //Bajaj, K. K. 8=oN?gUniv New Orleans,Dept Phys/New Orleans//La/70148 ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright PattersongE8=oN?nEffect of Magnetic-Field on the Energy-Levels of a Impurity Center in GaAs Ga1-xAlxAs Quantum-Well Structuresn8=oN?03.1.1E8=oN?8=oN? "Physical Review B-Condensed Matter"8=oN? Article$M_ @_~ E 1985 Jan 15 $M_ @_~ 31$M_ @_~ 2$M_ @_~ 913-918$M_ @_~ %A\\EAs01mesant\Procite Databases\WCS\Articles\Greene RL 1985 01.pdfA$M_ @_~ +215$M_ @_~ 3260F!=0\qbpX!=0\qbpX%=\\Aeron\Procite Databases\WCS\Articles/Johnson EO 1965 06.pdf2!=0\qbpX!=0\qbF!=0\qbpX!=0\qbpX%=\\Aeron\Procite Databases\WCS\Articles/Johnson EO 1965 06.pdf2!=0\qbpX!=0\qbF!=0\qbpX!=0\qbpX%=\\Aeron\Procite Databases\WCS\Articles/Johnson EO 1965 06.pdf2!=0\qbpX!=0\qb+[DtK/G=pH4 Article$M_ @_2 1983$M_ @_2 45$M_ @_2 9$M_ @_G2 825-829$M_ @_2 %>\\As01mesant\Procite Databases\WCS\Articles/Greene RL 1982.pdf>=pH4+256$M_ @_G2 3280Hq;@ -Greene, R. L. //Bajaj, K. K. //Phelps, D. E. -|=@pu6lUniv New Orleans,Dept Phys/New Orleans//La/70148 ; Usaf,Wright Aeronaut Labs,Aadr,Avion Lab/HWright Pattersonl|=@pu6LEnergy-Levels of Wannier Excitons in GaAs-Ga1-xAlxAs Quantum-Well StructuresL|=@pu603.1.3|H=@pu6 "Physical Review B-Condensed Matter"|=@pu6 Article$M_,@_z, 1984 Feb 15 $M_,@_zH,29$M_,@_z,4$M_,@_z, 1807-1812 $M_,@_z,%A\\As01mesant\Procite Databases\WCS\Articles\Greene HRL 1984 02.pdf,$M_,@_z,$M_,@_z,+348$M_,@_z,3290ra,Dept Elect & Comp Engn/Santa5@I='sH̬>Effects of Carrier Transport on High-Speed Quantum-Well Lasers>@='sH̬10.2.5@='sH̬ Applied Physics LettersI@='sH̬ Article$M_@_[ 1991 Oct 7 $M_@_[59$M_@_[15w7gYI;@.?Nagarajan, R. //Fukushima, T. //Corzine, S. W. //Bowers, J. E. ?@='sH̬5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5@I='sH̬>Effects of Carrier Transport on High-Speed Quantum-Well Lasers>@='sH̬10.2.5@='sH̬ Applied Physics LettersI@='sH̬ Article$M_@_[ 1991 Oct 7 $M_@_[59$M_@_[15I$M_@_[ 1835-1837 $M_@_[%C\\As01mesant\Procite Databases\WCS\Articles\Nagarajan R 1991 10.pdfC@='sH̬*WIe present a model for the dynamic response of quantum well lasers which shows that the carrier transport across the separate confinement heterostructure region and the barriers can be critical in deteIrmining the modulation bandwidth. We also show that, depending on the particular quantum well laser structure, a large part of the experimentally measured reduction in modulation bandwidth is due to tIransport factors.$M_@_[+101$M_@_[,Holes$M_@_[6190J@Dielectric Optical Waveguides and Technique for Fabricating Same@ت=oF05.2.5ت=oF706518ت=oFJ@Dielectric Optical Waveguides and Technique for Fabricating Same@ت=oF05.2.5ت=oF706518ت=oFoF"SUS4005312 US401111oF05.2.5ت=oF706518ت=oF7gN~J<@BLogan, R.A.//Schwartz, Bertram//Wiegmann, William.//Joseph Charles8=oF8=oF98=oFJ@Dielectric Optical Waveguides and Technique for Fabricating Same@ت=oF05.2.5ت=oF706518ت=oFJ US3833435 ت=oFUSت=oF9/3/1974ت=oFBE0805142A CA1003511A1 DE2347802A1 DE23478J02C2 FR2200533A1 FR2200533B1 GB1448372A IT1004023A JP49071950A2 NL7312980A SE0387751C US3833435 US3865646 US3883219ت=oF US3523223 ت=oFJIBM Technical Disclosure Bulletin, Vol. 15, No. 1, June 1972, Method for Making Hemispheres by Potemski et al., pp. 147 \A 148.ت=oF"SUS4005312 US401111J3 US4099305 US4121177 US4255755 US4294651 US4725112 US4764246 US5389026 US5567659 US3984173 US3994758 US4961618 US5270532 US4049488 US4066482 US4213805 US4230997 US4566171 US4582390 US4460910 US455048K;=?8LNagarajan, R. //Ishikawa, M. //Fukushima, T. //Geels, R. S. //Bowers, J. E. L=ȁtPȒ5Univ Calif Santa Barbara,Dept Elect & Comp Engn/Santa5K=ȁtPȒHighly P-PTyped Mg-Doped GaN Films Grown With GaN Buffer Layers>أ=-vf)01.5.4 Hydrogen Complexes and Passivation)أ=-vf 2Japanese Journal of ^N~ /$/L;@BANguyen, L. D. //Brown, A. S. //Thompson, M. A. //Jelloian, L. M. A=pm̬ Hughes Res Labs/Malibu//Ca/90265 =pm̬LV50-Nm Self-Aligned-Gate Pseudomorphic Alinas GaInAs High Electron-Mobility TransistorsV=pm̬09.1.5=pm̬ %IEEE Transactions oLn Electron Devices%=pm̬ Article$M_@_l1992 Sep$M_@_l39$M_@_lL9$M_@_l 2007-2014 $M_@_l%A\\As01mesant\Procite Databases\WCS\Articles\Nguyen LD 1992 09.pdfA=pmL̬*We report on the design and fabrication of a new class of 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors (HEMT's) with potential for ultra-high-freLquency and ultra-low-noise applications. These devices exhibit an extrinsic transconductance of 1740 mS/mm and an extrinsic current-gain cutoff frequency of 340 GHz at room temperature; the latter is Lthe highest value yet reported for any three-thermal semiconductor device. We also report for the first time a detailed comparison of the small-signal characteristics of a pseudomorphic and a lattice-Lmatched AlInAs/GaInAs HEMT with similar gate length (50 nm) and gate-to-channel separation (17.5 nm): the former demonstrates a 16% higher transconductance and a 15% higher current-gain cutoff frequenLcy, but exhibits a 38% poorer output conductance. Finally, we offer an analysis on the high-field transport properties of ultra-short gate-length AlInAs/GaInAs HEMT's. This analysis shows that a reduc=rDzd04.4.3&=rDzd Physic^N~c$/M995 HHBE 51HHBE19HHBE 13326-13336 HHBE%A\\As01mesMant\Procite Databases\WCS\Articles/Glaser ER 1995 05.pdfAHHBE+162HHBE,NSingle-Crystal GaN/ Mg-Doped GaN/ Luminescence/ Layers/MI Recombination/ CentersNHHBE3120Nq;@ 1Jalabert, R. A. //Baranger, H. U. //Stone, A. D. 1p$=rDzdIYale Univ,Pob 2157/New Haven//Ct/06520 ; at&T Bell Labs/Holmdel//Nj/07733Ip$N=rDzdJConductance Fluctuations in the Ballistic Regime: a Probe of Quantum ChaosJp$=rDzd04.4.3&=rDzd PhysicNal Review Lettersp$=rDzd Article$M_l@_ 1990 Nov 5 $M_l@_65$M_l@_N19$M_l@_ 2442-2445 $M_l@_%C\\As01mesant\Procite Databases\WCS\Articles\Jalabert RA 1990 11.pdfC$M_l@ND_+251$M_l@_3350O=qvj<LReflectance-Difference Spectroscopy of (001) GaAs-Surfaces Ultrahigh-VacuumL=qvj<06.1.2=qvjHighly P-PTyped Mg-Doped GaN Films Grown With GaN Buffer Layers>أ=-vf)01.5.4 Hydrogen Complexes and Passivation)أ=-vf 2Japanese Journal of أ=-vf 2Japanese Journal of ^N~,/O can only be obtained by following specific heating or cooling procedures under very low AS4 flux. More generally, it is possible to employ this optical technique to determine surface atomic and electrO onic structure. Because RD spectra can be obtained with the surface in any transparent ambient, the database that we have established here provides a new approach for elucidating surface reconstructioO ns of (001) GaAs and hence the dynamics of surface reactions in non-UHV environments."7$M_@tB@_lBl7+2097$M_@tB@_lBl7,Molecular-Beam Epitaxy/ ScO anning-Tunneling-Microscopy/ Electron-Diffraction/ Angle-Resolved Photoemission/ Laser- Scattering/ Iii-V Semiconductors/ Gaas(100) Surfaces/ Infrared-Spectroscopy/ Optical Anisotropies/ Kinetic LimitO3s7$M_@tB@_lBl73360Pp<@: %Nakamura, S. //Senoh, M. //Mukai, T. %أ=-vf0Nichia Chem Ind Ltd,491 Oka/Tokushima 774//Japan0أ=-vf>Highly P-PTyped Mg-Doped GaN Films Grown With GaN Buffer Layers>أ=-vf)01.5.4 Hydrogen Complexes and Passivation)أ=-vf 2Japanese Journal of Q <u=?^2Abstreiter, G.//Bauser, E.//Fischer, A.//Ploog, K.2=(wȒAMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep GerAQ=(wȒqRaman-Spectroscopy: Versatile Tool for Characterization of Thin-Films and Heterostructures of GaAs and AlxGa1-xAsq=(wȒ07.2.2Q=(wȒ Applied Physics=(wȒ Article$M_@_܈~1978$M_@_܈~16$M_)YN~,/4/Pre, respectively. This value of the hole concentration is the highest ever reported for the p-type GaN films and that of the resistivity is the lowest.4$M_m$o@_ov+179P$M_m$o@_ov,cHall-Effect Measurement/ Mg-Doped GaN/ Hole Concentration/ Hole Mobility/ Resistivity/ Buffer Layerc$M_m$o@_ov3130Q <@^2Abstreiter, G.//Bauser, E.//Fischer, A.//Ploog, K.2=(wȒAMax Planck Inst Festkorperforsch/D-7000 Stuttgart 80//Fed Rep GerAQ=(wȒqRaman-Spectroscopy: Versatile Tool for Characterization of Thin-Films and Heterostructures of GaAs and AlxGa1-xAsq=(wȒ07.2.2Q=(wȒ Applied Physics=(wȒ Article$M_@_܈~1978$M_@_܈~16$M_Q@_܈~4$M_@_܈~345-352$M_@_܈~24$M_@_܈~%A\\As01mesant\Procite Databases\WCS\QYArticles/Abstreiter G 1978.pdfA+134$M_@_܈~60510RSObservation of Zero-Dimensional States in a One-Dimensional Electron InterferometerS A=vjZ03.5.4 A=vjZ Physical Review LeRSObservation of Zero-Dimensional States in a One-Dimensional Electron InterferometerS A=vjZ03.5.4 A=vjZ Physical Review LeRSObservation of Zero-Dimensional States in a One-Dimensional Electron InterferometerS A=vjZ03.5.4 A=vjZ Physical Review LeDCs4/\\As01mesant\Procite Databases\WCS\Articles\Wang G 1994 05.pdf>$M_ S@_ *We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDs). The temperature dependence of the photoluminescence (PL) indicates that the onset eneSrgy of the thermal quenching in approximately 20-nm-diam QDs is enhanced by a factor of approximately 2 as compared to a quantum well (QW), due to the additional confinement. At low temperature, an inScreased carrier lifetime is observed for the QDs as compared to a reference QW (880 vs 330 ps). The carrier lifetime in the QDs was found to be independent of the temperature for T<30 K. In addition tTq;Ү1?R WLaidig, W. D. //Holonyak, N. //Camras, M. D. //Hess, K. //Coleman, J. J. //Bardeen, J. Wc=p/Univ Illinois,Dept Elect Engn,Elect Engn Res ; UnTiv Illinois,Hort Res Lab/Urbana//Il/61801 ; Univ Illinois,Coordinated Sci Lab/Urbana//Il/61801 ; Rockwell Int,Electr Res Ctr/Anaheim//Ca/92803 ; Univ Illinois,Dept Phys/Urbana//Il/61801cT$@_$@_ :${3410^N~ \\As01mesant\Procite Databases\WCS\Articles/Laidig WD 1980.pdf>{@_$@_ :${+403T){@_$@_ :${3410Up<@D Davis, R. F. //Sitar, Z. //Williams, B. E. //Kong, H. S. //Kim, H. J. //Palmour, J. W. //Edmond, J. A. //Ryu, J. //Glass, J. T. //Carter, C. H. h=sZ8UDN Carolina State Univ,Dept Mat Sci & Engn,Box 7907/Raleigh//Nc/27695Dh=sZ8Critical-Evaluation of the Status of the Areas for Future-Research Regarding the WUide Band-Gap Semiconductors Diamond ; Gallium Nitride and Silicon-Carbideh=sZ812.0h=sZ8 QMaterials Science and Engineering B-SUolid State Materials for Advanced TechnologyQh=sZ8 Articleu$M_~̀@_ĀLu1988u$M_~̀@_ĀLu 1u$UM_~̀@_ĀLu1u$M_~̀@_ĀLu77-104u$M_~̀@_ĀLu%=\\As01mesant\Procite Databases\WCS\Articles/Davis RF 1988.pdf=u$M_UO~̀@_ĀLu+165u$M_~̀@_ĀLu3140V;h1?P Wolford, D. J. //Bradley, J. A.  &=v7Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987&=v?Pressur5@_$@_ $53@_$@_ $12@_$@_ Ctr/Yorktown Hts//Ny/105987&=v?PressurFODTX=u7,Rate-Equation Analysis of Microcavity Lasers,=u711.2.3=u7=u7 XJournal of Applied Physics=u7 Article$M_td@_\3t 1989 Nov 15 $M_td@_\3t66$M_tdX@_\3t10$M_td@_\3t 4801-4805 $M_td@_\3t%B\\As01mesant\Procite Databases\WCS\Articles\Yokoyama H 1989 11.pdf,$M_tXtd@_\3t$M_td@_\3t+131$M_td@_\3t6520Y;@(Blacha, A. //Presting, H. //Cardona, M. (0=t07Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700070=t0YDDeformation Potentials of K = 0 States of Tetrahedral SemiconductorsD0=t001.2.2 Elasticity0=t0 &Physica Status Solidi B-BasiYc Research&0=t0 Review$M_@_4.1984$M_@_4.126$M_@_4.1Y$M_@_4.11-36$M_@_4.%=\\As01mesant\Procite Databases\WCS\Articles/Blacha A 1980.pdf,$M_@_4.$Z݊(==?Ikeda, Masahiro=p`Optical switch=p`11.4.1=p`Z=p`/Nippon Telegraph & Telephone Public Corporation/=p`403735=p` US4521069 =p :j~D/<W598 ; Univ Newcastle Upon Tyne/Newcastle Tyne Ne1 7ru/Tyne &p=woLXkPressure-Dependence of GaAs/AlxGa1-xAs Quantum-Well Bound-States: the Determination of Valence-BaWnd Offsetsk=woLX02.1.3=woLX (Journal of Vacuum Science & Technology B(=woLX ArticleW=$M_FH@_H W= 1986 Jul-AugP=woLXP=woLX4=$M_FH@_H W=4=$M_FHW@_H W= 1043-1050 =$M_FH@_H W=%B\\As01mesant\Procite Databases\WCS\Articles\Wolford DJ 1986 07.pdfB=$M_FH@_H W=+168=$M_FWH@_H W=6490X;@xYokoyama, H. //Brorson, S. D. =u7[Mit,Dept Elect Engn & Comp Sci/Cambridge//Ma/02139 ; Mit,Electr Res Lab/Cambridge//Ma/02139[X=u7,Rate-Equation Analysis of Microcavity Lasers,=u711.2.3=u7=u7 Y;h1?(Blacha, A. //Presting, H. //Cardona, M. (0=t07Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-700070=t0YDDeformation Potentials of K = 0 States of Tetrahedral SemiconductorsD0=t001.2.2 Elasticity0=t0 &Physica Status Solidi B-BasiYc Research&0=t0 Review$M_@_4.1984$M_@_4.126$M_@_4.1YM@_4.+182$M_@_4.6560DtN~lT *Z"US4580873 US4630883 US4717228 US4720160 US4737003 US4773736 US4775640 US4784451 US4799797 US4813757 US4844572 US4904039 US4932736 US5033016 US5033811 US5093746 US5101293 US5131060 US514651Z8 US5148505 US5283844 US6091867 US6137930 US6236778 US6236787 US6243511 US6253007 US6330380=p`%;\\As01mesant\Procite Databases\WCS\Patents\US04521069__.pdf;Z=p`' G02B 5/174 =p`+28=p`63260[;@|Cage, M. E. //Dziuba, R. F. //Field, B. F. //Williams, E. R. //Girvin, S. M. //Gossard, A. C. //Tsui, D. C. //Wagner, R. J. |b=tSNbs,Ctr Absol[ute Phys Quant,Div Elect Measurements & ; Nbs,Ctr Chem Phys,Div Surface Sci/Washington//Dc/20234 ; Bell Tel Labs Inc/Murray Hill//Nj/07974 ; Princeton Univ,Dept Elect Engn & Comp Sci/Princeton//Nj/08[544 ; Usn,Res Lab/Washington//Dc/20375b=tSBDissipation and Dynamic Non-Linear Behavior in the Quantum RegimeBb=tS02.5.2[l=tSl=tS Physical Review Lettersb=tS Article$M_ @_W  1983 Oc\¥+<1?J Keyes, R.W. =w:Figure of Merit for Semiconductors for High-Speed Switches:0=w09.0\=w Proceedings of the IEEE=w1972t$M_} @_Nxt60t$M_} @_Nxt225t$M_$TDz<LYRM_@_4.+182$M_@_4.6560Z݊(=@Ikeda, Masahiro=p`Optical switch=p`11.4.1=p`Z=p`/Nippon Telegraph & Telephone Public Corporation/=p`403735=p` US4521069 =pZ`JP=p`6/4/1985=p`CA1178703A1 DE3210980A1 DE3210980C2 FR2503394A1 FR2503394B1 JP02028851B4 JP02030491B4 JP571Z63216A2 JP58050517A2 JP58052621A2 JP58080617A2 JP58137246A2 US4521069=p`1US3952265 US4065729 US4316156 US4327962 US43769461=p`Z"Directional Coupler Switches, Modulators, and Filters Using Alternating Techniques, in IEEE Transactions on Circuits and Systems, vol. CAS-26, No. 12, Dec. 1979."=p`[;[?|Cage, M. E. //Dziuba, R. F. //Field, B. F. //Williams, E. R. //Girvin, S. M. //Gossard, A. C. //Tsui, D. C. //Wagner, R. J. |b=tSNbs,Ctr Absol[ute Phys Quant,Div Elect Measurements & ; Nbs,Ctr Chem Phys,Div Surface Sci/Washington//Dc/20234 ; Bell Tel Labs Inc/Murray Hill//Nj/07974 ; Princeton Univ,Dept Elect Engn & Comp Sci/Princeton//Nj/08[544 ; Usn,Res Lab/Washington//Dc/20375b=tSBDissipation and Dynamic Non-Linear Behavior in the Quantum RegimeBb=tS02.5.2[l=tSl=tS Physical Review Lettersb=tS Article$M_ @_W  1983 OcHx8hmL/T/_;@ Capasso, F.  C=rB#At&T Bell Lab/Murray Hill//Nj/07974#C=rB Physics of Avalanche Photodiodes C_=rB11.3.2C=rB Semiconductors and SemimetalsC=rB Review$M_@_B19_85$M_@_B22(Pt.d)$M_@_B1-172$M_@_B%?\\As01mesant\Procite Databases\WCS\Articles//Capasso F 1_985.pdf,=rB=rB+126$M_@_B6620`q;@ @Nahory, R. E. //Pollack, M. A. //Johnston, W. D. //Barns, R. L. @X=Ht8MBell Tel Labs Inc/Holmdel//Nj/07733 ; Bell Tel Labs Inc/Murray Hill//Nj/0`7974MX=Ht8gBand-Gap Versus Composition and Demonstration of Vegards Law for In1-xGaxAsyP1-y Lattice Matched to InP Eh?=Ht8`h?=Ht8h?=Ht8h?=Ht8h?=Ht8h?=Ht8h?a!Fr>w1? Krijn, MPCM KHeterojunction Band Offsets and Effective Masses in III V Quaternary AlloysK02.1 $Semiconductor Science and Technology$19916127-31%=\\Aaeron\Procite Databases\WCS\Articles\Krijn MPCM 1991 01.pdf=' 0268-1242 )iEnglish Phillips Res Labs, POB 80000, 5600 JA EINDHOVEN, Netherlands, EU469 Copyright 2003 SciSearch Plusi*HEstimates os/Nahory RE 1978.pdf9@_@_ `9+239@_@_ 3530#S~ *l]T20@_TD@_<b?T818-820@_TD@_<b?T%D\\As01mesant\Procite Databases\WCS\Articles/Campbell JC 1983 009.pdfD@_TD@_<]Bb?T+106@_TD@_<b?T6610^8r>@bZhu, X.J.//Louie, S.G. HCHCHCHC^HCHCHCHCHCHC^HCAQuasi-Particle Band-Structure of 13 Semiconductors and InsulatorsAHC01.3.2 Electron Band Struct^uresHC "Physical Review B-Condensed Matter"HC1991HC43HC^17HC 14142-14156 HC%=\\As01mesant\Procite Databases\WCS\Articles\Zhu X 1991 06.pdf=HC_=rB11.3.2C=rB Semiconductors and SemimetalsC=rB Review$M_@_B19_85$M_@_B22(Pt.d)$M_@_B1-172$M_@_B%:\\Aeron\Procite Databases\WCS\Articles//Capasso F 1985.p_df'=rB=rB+126$M_@_B6620CTRIC MATRICESHC64610^h8h(dL/^' 0163-1829 HC)ENGLISH UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA, 94720UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT SCI, BERKELEY, CA, ^94720 FQ974 Copyright 2003 SciSearch PlusHC*By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle^ band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demons^trate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AIP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and^ the Al0.5Ga0.5As and In0.53Ga0.47As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(GAMMA-1c) of AlP^ , E(L1c) of AlAs, and E(L1c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are also examined in this work. The m^ any-body corrections to the eigenvalues of the valence-band-maximum states obtained from the local-density approximation are calculated for the zinc-blende-structure semiconductors, which are widely u^ sed in semiconductor-interface studies. In the present approach, the static screening of the Coulomb interaction between two electrons in a crystal is determined using a model that depends only on the_;1? Capasso, F.  C=rB#At&T Bell Lab/Murray Hill//Nj/07974#C=rB Physics of Avalanche Photodiodes C^N~|bX1=n0 11.4.2X1=n0 At&T Bell LaboratoriesX1=n0 706518X1=n0  USb4546244 X1=n0 USX1=n0  10/8/1985 X1=n0 CA1213965A1 CA1281220A1 DE3683370C0 EP0155802A2 EP015b5802A3 EP0239635A1 EP0239635B1 HK0100493A JP63501528T2 KR9401908B1 KR9401908Y1 US4546244 US4716449 USRE32893 WO8702478A1X1=n0 "T. H. Wood et al, ""High-Speed Optbical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure"", Appl. Phys. Lett. 44 (1), Jan. 1, 1984, pp. 16-18.; K. Bohnert et al, ""Intrinsic Absorptive Optical Bistability in CdS"", bApp. Phys. Lett. 43 (12), Dec. 15, 1983, pp. 1088-1090.; J. Hajto et al, ""Optical Bistability Observed in Amorphous Semiconductor Films"", Philosophical Magazine B, 1983, vol. 47, No. 4, pp. 347-366.b"X1=n0 "7US4737003 US4749850 US4751378 US4754132 US4761620 US4772854 US4800262 US4822992 US4828368 US4830444 US4848880 US4851840 US4877952 US4878723 US4884119 US49b04858 US4904859 US4914286 US4917456 US4947223 US4952791 US4957337 US4959534 US4967068 US4978842 US4999485 US4999486 US5010517 US5023944 US5045681 US5073981 US5091980 US5095200 US5101414 US5126553 US52b02897 US5210428 US5222071 US5238867 US5288990 US5311008 US5323019 US5376784 US5451767 US5475704 US5488231 US5488504 US5539668 US5543631 US5608566 US5623140 US5623359 US5646395 US5731596 US5748653 US59c8r>h1?v-Fiorentini, V.//Methfessel, M.//Scheffler, M. HCHCHCHC^N~T/tates of valence-band and conduction-band offsets for latticematched and pseudomorphic strained heterostructures of six technologically important III-V quaternary alloys are presented. Valence-band offsaets are obtained via interpolation of the theory-based results of Van de Walle's 'model-solid' approach for the binary constituents. Estimates for band gap differences are obtained via interpolation oaf the experimental band gap energies of the ternary constituents. Adding the valence-band offset and band gap difference gives an estimate of the conduction-band offset. Band-edge effective masses at aGAMMA are determined from a linear interpolation of the effective masses of the binary constituents, obtained from self-consistent ab initio band structure calculations. Results are shown to agree wela7l with the outcome of experiments.H+18364670bފ(=@0Miller, D. A. B. X1=n0 X1=n0 X1=n0 %Nonlinear and bistable optical device%bX1=n0 11.4.2X1=n0 At&T Bell LaboratoriesX1=n0 706518X1=n0  USb4546244 X1=n0 USX1=n0  10/8/1985 X1=n0 CA1213965A1 CA1281220A1 DE3683370C0 EP0155802A2 EP015b5802A3 EP0239635A1 EP0239635B1 HK0100493A JP63501528T2 KR9401908B1 KR9401908Y1 US4546244 US4716449 USRE32893 WO8702478A1X1=n0 "T. H. Wood et al, ""High-Speed Optc8r>h1?v-Fiorentini, V.//Methfessel, M.//Scheffler, M. HCHCHCHCHCHC-]N~2\/cHCHCElectronic and Structural Properties of GaN by the Full-Potential Linear Muffin-Tin Orbitals Method - the role ocf the d-electronsqHCHCHC01.3.2 Electron Band StructuresHCc "Physical Review B-Condensed Matter"HC1993HC47HC20HCc 13353-13362 HC%D\\As01mesant\Procite Databases\WCS\Articles\Fiorentini V 1993 05.pdfDHC' 0163-1829c HC)ENGLISH MAX PLANCK GESELL, FRITZ HABER INST, FARADAYWEG 4-6, W-1000 BERLIN 33, GERMANY, UNIV CAGLIARI, DIPARTIMENTO SCI FIS, I-09100 CAGLIARI, ITALY, LF069 Copcyright 2003 SciSearch PlusHC*The structural and electronic properties of cubic GaN are studied within the local-density approximation by the full-potential licnear muffin-tin orbitals method. The Ga 3d electrons are treated as band states, and no shape approximation is made to the potential and charge density. The influence of d electrons on the band structc ure, charge density, and bonding properties is analyzed. Due to the energy resonance of Ga 3d states with nitrogen 2s states, the cation d bands are not inert, and features unusual for a III-V compound;5m=?Capasso, F. //Kiehl, R. A. $At&T Bell Labs/Murray Hill//Nj/07974$sResonant Tunneling Transistor With Quantum Well Base and High-Energy Injection: a New Negative Differential$M_|l@_d>P|6650^N~tb04858 US4904859 US4914286 US4917456 US4947223 US4952791 US4957337 US4959534 US4967068 US4978842 US4999485 US4999486 US5010517 US5023944 US5045681 US5073981 US5091980 US5095200 US5101414 US5126553 US52b02897 US5210428 US5222071 US5238867 US5288990 US5311008 US5323019 US5376784 US5451767 US5475704 US5488231 US5488504 US5539668 US5543631 US5608566 US5623140 US5623359 US5646395 US5731596 US5748653 US59b 65899 USH19117X1=n0 %;\\As01mesant\Procite Databases\WCS\Patents\US04546244__.pdf;X1=n0 ' H01J 40/14 X1=n0 b @+57X1=n0 63280c8r>@v-Fiorentini, V.//Methfessel, M.//Scheffler, M. HCHCHCHCc HCHCHCHCHCd Devices09.2.4 Journal of Applied Physics Article 1985 Aug 1 583 1366-1368 %<\\Aeron\Procite Databases\WCS\Articles\Capasso F 1985 08.pdf<+1826630e;1?(Capasso, F. //Mohammed, K. //Cho, A. Y. (0=7u:S$At&T Bell Labs/Murray Hill//Nj/07974$0=7u:SGSequential Resonanet Tunneling Through a Multiquantum Well SuperlatticeG0=7u:S04.1.1.2P/=7u:SP/=7u:S Applied Physicse Letters0=7u:S Article$M_|l@_d>P| 1986 FEB 17 $M_|l@_d>P|48$M_|l@_d>P|$M_|l@_d>P|+f~ d/f;@LCapasso, F. //Sen, S. //Gossard, A. C. //Hutchinson, A. L. //English, J. H. L`{=sz$At&T Bell Labs/Murray Hill//Nj/07974$`{=fszPQuantum-Well Resonant Tunneling Bipolar-Transistor Operating at Room-TemperatureP`{=sz09.2.4`{=sz IEEE Electfron Device Letters`{=sz Articlec$M_ln@_nc1986 Octc$M_ln@_nc7c$M_ln@_nfc10c$M_ln@_nc573-576c$M_ln@_nc%>\\As01mesant\Procite Databases\WCS\Articles/Capasso F 1986.pdf>=szf;+107c$M_ln@_nc6660g;@-Capasso, F. //Tsang, W. T. //Williams, G. F. -'=rE'Bell Tel Labs Inc/Murray Hill//Nj/07974''=rEfStaircase gSolid-State Photomultipliers and Avalanche Photo-Diodes With Enhanced Ionization Rates Ratiof'=rE11.3.2'=rE %IEEE Transactiongs on Electron Devices%'=rE Article<$M_EG@_F:><1983<$M_EG@_F:><30<$M_EG@_F:>g<4<$M_EG@_F:><381-390<$M_EG@_F:><%A\\As01mesant\Procite Databases\WCS\Articles/Capasso F 1983 04.pdfA<$M_EG@_F:g=><+154<$M_EG@_F:><6680h;h1?@-Cardona, M. //Christensen, N. E. //Fasol, G. -#=Po6R7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007#=Po6R1aN~ h;@@-Cardona, M. //Christensen, N. E. //Fasol, G. -#=Po6R7Max Planck Inst Festkorperforsch,Heisenbergstr 1/D-70007#=Po6RhVRelativistic Band-Structure and Spin-Orbit-Splitting of Zincblende-Type SemiconductorsV#=Po6R01.3.2 Electron Band Structures=Po6Rh "Physical Review B-Condensed Matter"#=Po6R Article$M_ܡ@_ԡh_ 1988 July 15 $M_ܡ@_ԡh_38h$M_ܡ@_ԡh_3$M_ܡ@_ԡh_ 1806-1827 $M_ܡ@_ԡh_%A\\As01mesant\Procite Databases\WCS\Articles\Cardona M 1988 07.pdfh]A$M_ܡ@_ԡh_+168$M_ܡ@_ԡh_6720i,<@T"Roth, L.M.//Lax, B.//Zwerdling, S."=سtt<>Theory of Optical Magneto-Absorption Effects in Semiconductors>=سtt<i05.1.2=سtt< Physical Review=سtt<1959$M_4$@_ p4114$M_4$@_ p4i90-1049=سtt<9=سtt<%?\\As01mesant\Procite Databases\WCS\Articles\Roth LM 1956 04.pdf?$M_4$@_ p461780ij8r>h1?&Rohlfing, M.//Kruger, P.//Pollmann, J. HCHCHCHCture Calculations for C, Si, Ge, GaAs, and SiC using Gaussian-Orbital Basis-SetsH.#SN~l/j)wENGLISH UNIV MUNSTER, INST THEORET PHYS FESTKORPERPHYS 2, D-48149 MUNSTER, GERMANY, MQ165 Copyright 2003 SciSearch PluswHCP *We report state-of-the-art fjirst-principles calculations of the quasiparticle energies of prototype homo-polar and heteropolar covalent semiconductors described in terms of the electron self-energy operator. The wave functions ajre calculated within density-functional theory using the local-density approximation and employing nonlocal, norm-conserving pseudopotentials. The self-energy operator is evaluated in the GW approximaj tion. Employing the plasmon-pole approximation for the frequency dependence of the dielectric matrix epsilon(G),(G)'(q omega), its static part is fully calculated within the random-phase approximationj (RPA) as well as by using a number of different models. All calculations are carried out employing localized Gaussian orbital basis sets. This will turn out to be very useful for detailed studies of j the quasiparticle properties of more complex systems such as bulk defects including lattice relaxation and reconstructed surfaces with large unit cells or interfaces, which are otherwise computationalj ly too demanding. Using an s,p,d,s double dagger basis set of 40 Gaussian orbitals for Si, for example, yields already convergent results in excellent agreement with tl;e results of a 350-plane-wave cj alculation in the corresponding plane-wave representation. Most of our results for Si, diamond, Ge, and GaAs are in very good agreement with experimental data and with available plane-wave GW calculatk8r>h1?-Albrecht, S//Reining, L//DelSole, R//Onida, G-x=s SAb initio calculation of excitonic effects in the optical spectra of semiconductorsS^N~t/k =s  =s  =s  =s  =s  k=s  =s  =s  =s  =s  =ks  =s  =s  =s  =s  =s k =s  =s  =s  =s  =s k =s  =s  =s  =s  =s 64650l=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fhl=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fhl=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fhsF0F=r08.4.30F=rm0F=r Applied Physics Letters0F=r Article$M_do@_|oTt 1990 Apr 23 $M_dN~j8r>@&Rohlfing, M.//Kruger, P.//Pollmann, J. HCHCHCHCjHCHCHCHCHCjHCHCiQuasi-Particle Band-Structure Calculations for C, Si, Ge, GaAs, and SiC using Gaussian-Orbital Basis-SetsHjCHCcHC01.3.2 Electron Band StructuresHC "Physical Review B-Conjdensed Matter"HC1993HCP 48HCP 24HCP  17791-1j7805 HCP %B\\As01mesant\Procite Databases\WCS\Articles\Rohlfing M 1993 12.pdfBHCP ' 0163-1829 HCP j)wENGLISH UNIV MUNSTER, INST THEORET PHYS FESTKORPERPHYS 2, D-48149 MUNSTER, GERMANY, MQ165 Copyright 2003 SciSearch PluswHCP *We report state-of-the-art fjirst-principles calculations of the quasiparticle energies of prototype homo-polar and heteropolar covalent semiconductors described in terms of the electron self-energy operator. The wave functions ak8r>h1?-Albrecht, S//Reining, L//DelSole, R//Onida, G-x=s SAb initio calculation of excitonic effects in the optical spectra of semiconductorsS^N~2ks  =s  =s  =s  =s  =s k =s  =s  =s  =s  =s k =s  =s  =s  =s ! =s  k =s  =s  =s . =s *An ab initio approach to the calculation of excitonic effk ects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. Ak n application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.k $M_l@_N+113$M_l@_N,tBand Gaps/ Clusters/ Crystal/ Diamond/ Electronic Structure/ GaAs/ Insulators/ Local-Field/ Quasi-Particle/ Siliconlution During Growth of GaAs and AlGaAs by Molecular-Beam EpitaxyM0=v:ԫ06.3.20=v:ԫ Journal of Applied Physics0l=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fh$M_do@_|oTt 1990 Apr 23 $M_d^N~2l/k8r>@-Albrecht, S//Reining, L//DelSole, R//Onida, G-x=s SAb initio calculation of excitonic effects in the optical spectra of semiconductorsSkx=s 01.4.4 Excitonsx=s  Physical Review Lettersx=s American Physical Soc$M_lk@_N$M_l@_N1998$M_l@_N80$M_l@_N20$M_l@_N 451k0-4513 $M_l@_N%B\\As01mesant\Procite Databases\WCS\Articles\Albrecht S 1998 05.pdfB$M_l@_N' 0031-9007 $M_l@_kN)English Ecole Polytech, CNRS, CEREM, CEA, URA 1380, Lab Solides Irradies, F-91128 Palaiseau, France Univ Roma Tor Ventr4, Dipartimento, FIS, IST NAZL FIS MAT, I-00133 Rome, Italy A1998ZN3080k0038 Copyright 2003 SciSearch Plus =s  =s  =s  =s k =s  =s  =s  =s  =s  =lution During Growth of GaAs and AlGaAs by Molecular-Beam EpitaxyM0=v:ԫ06.3.20=v:ԫ Journal of Applied Physics0l=v:ԫ Article]$M_fh@_h8] 1985 Mar 15 0=v:ԫ57]$M_fh@_h8]6]$M_fh$M_do@_|oTt 1990 Apr 23 $M_d^N~t/mo@_|oTt56$M_do@_|oTt17$M_do@_|oTt 1697-1699 $M_do@_|oTt%B\\As01mesant\Procite Databases\WCS\Amrticles\Pfeiffer L 1990 04.pdf,$M_do@_|oTt$M_do@_|oTt+183$M_do@_|oTt3680n;@h Casey, H. C.  R=HtJ'Bell Tel Labs Inc/Murray Hill//Nj/07974' R=HtJ~Room-Temperature Threshold-Current Dependennce of GaAs-AlxGa1-xAs Double-Heterostructure Lasers on X and Active-Layer Thickness~ R=HtJ10.1.2 R=HtJ Journal of Applied Physincs R=HtJ Article$M_@_l,1978$M_@_l,49$M_@_l,7n$M_@_l, 3684-3692 $M_@_l,%@\\As01mesant\Procite Databases\WCS\Articles/Casey HC 1978 07.pdf@ h=HtJ+110n+$M_@_l,6760o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@m*Z|/o;@ Chadi, D. J.  =`qZ̬0Xerox Corp,Palo Alto Res Ctr/Palo Alto//Ca/943040=`qZ̬V(110) Surface-States of GaAs: Senositivity of Electronic-Structure to Surface-StructureV=`qZ̬06.2.2=`qZ̬ "Physical Review B-Condensed Matter"o=`qZ̬ Article$M_D\@_TD 1978 Aug 15 =`qZ̬18$M_D\@_TD4$M_D\@o_TD 1800-1812 $M_D\@_TD%@\\As01mesant\Procite Databases\WCS\Articles\Chadi DJ 1978 08.pdf@=`qZ̬+155$M_D\o@_TD6830p;@(Chai, Y. G. //Wood, C. E. C. //Chow, R. (Varian Associates,Corp Solid State Lab/Palo Alto//Ca/94303 ; Cornell Univ,Natl Res & Resource Fac Submicron ; Cornell Univ,Dept Elect pEngn/Ithaca//Ny/14853TThe Effect of Growth-Conditions on Si Incorporation in Molecular-Beam Epitaxial GaAsT06.3.2 Applied Physics Letters Article19813910800-803%pQ<\\As01mesant\Procite Databases\WCS\Articles/Chai YG 1981.pdf<+1076900q;[??Chandra, A. //Wood, C. E. C. //Woodard, D. W. //Eastman, L. F. ?)=tJ,Cornell Univ,Sch Elect Engn/Ithaca//Ny/14853,)=t@_bQ+139$M_@_bQ6940r;1?05Chang, C. A. //Ludeke, R. //Chang, L. L. //Esaki, L. 5=ؽs07Ibm Corp,Thomas J Watson Res Ctr/Yorktown Hts//Ny/105987=ؽs87=ؽs006.1.4=ؽs0 Applied Physics LettersmO:jAqN~s akes into account the valence-band mixing and the strain effects with proper boundary conditions. Detailed numerical results and significant features for strained GaxIn1-xAs grown on an In1-xGaxAsyP1-s y lattice matched to InP are presented. For a Ga mole fraction x less than 0.468 (compression), the top subband is heavy-hole-like. For x greater than 0.468 (tension strain), the top band can be eithes r a heavy-hole or a light-hole subband, depending on the well width and the shear deformation potential. Interesting subband structures, which show a negative effective mass in the top subband, are disscussed.$M_@_+196$M_@_,Effective Masses/GaAs/ Hole Subands/ Lasers/Layer Super Lattices/ Material Parameters/ Semiconductors/Ssuperlattices/ Uniaxial Stress/Valence Bands$M_@_$M_@_64660t h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#ht $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!t $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!t $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!t $M_!#@_#h $M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!JzN~|/r=ؽs0 Article$M_td@_\1977$M_td@_\31$M_td@_\11$M_tdr@_\759-761$M_td@_\%=\\As01mesant\Procite Databases\WCS\Articles/Chang CA 1977.pdf=$M_td@_\+146$M_tdr@_\6960s8r>@ Chuang S.L.3=r 3=r?Efficient Band Structure Calculations of Strained Quantum Wells3=sr>3=r03.13=r "Physical Review B Condensed Matter3=r3=sr3=r1991$M_@_43$M_@_12$M_@_ 9649-96s61 $M_@_%A\\As01mesant\Procite Databases\WCS\Articles\Chuang SL 1991 04.pdfA$M_@_' 0163-1829 $M_@_s)vEnglish Univ Illinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL, 61801 FK191 Copyright 2003 SciSearch Plus$M_@_$M_@_tr^07.38=r^ (Journal of Vacuum Science & Technology B8=r^'8=r^1991t$M_!#@_#h9$M_!#@_#h4$M_!#@_#h 2182-2188 $M_!#@_#h%B\\Aeron\Procite Databases\s/Valence Bands$M_@_$M_@_64660} =ms$M_@_ $M_@_$M_@_$M_@_$M_@_s$M_@_$M_@_$M_@_$M_@_$M_@_ $M_s@_$M_@_$M_@_$M_@_$M_@_$M_@_s/$M_@_*The effective-mass equations using the Luttinger-Kohn Hamiltonian taking into account the strain effects are solved exactly by making a unitary trans sformation. Using this method, we need to solve two 2 x 2 matrices instead of the original 4 x 4 matrix. The eigenvalues and eigenvectors for the heavy hole and the light hole can be expressed analytis cally. When applied to heterojunctions such as quantum wells, the reduction in the number of unknowns makes the method a more efficient approach to the calculations of valence-band structures, which ts akes into account the valence-band mixing and the strain effects with proper boundary conditions. Detailed numerical results and significant features for strained GaxIn1-xAs grown on an In1-xGaxAsyP1-tPr>$u=?Stringfellow, G.B. //Chen G.S.8=r^ 8=r^-Atomic ordering in III/V semiconductor alloys-8=tr^07.38=r^ (Journal of Vacuum Science & Technology B8=r^'8=r^1991^N~/tPr>@Stringfellow, G.B. //Chen G.S.8=r^ 8=r^-Atomic ordering in III/V semiconductor alloys-8=tr^07.38=r^ (Journal of Vacuum Science & Technology B8=r^'8=r^1991t$M_!#@_#h9$M_!#@_#h4$M_!#@_#h 2182-2188 $M_!#@_#h%G\\As01mesant\Procite Databtases\WCS\Articles\Stringfellow GB 1991 07.pdfG$M_!#@_#h' 1071-1023 $M_!#@_#h)OEnglish Univ Utah, Salt Lake City UT, 84112 GB897 Copyright t2003 SciSearch Plus$M_!#@_#h$M_!#@_#h$M_!#@_#h$M_!#@_#h.$M_!#@_t#h*The phenomenon of spontaneous atomic scale ordering was first reported for semiconductor alloys only approximately 5 years ago. Since that time, ordering has been observed in nearly alui.=1?Sanders, G. D. //Bajaj, K. K. ?=o ccUniversal Energy Syst Inc,4401 Dayton Xenia ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright Pattersoncu?=o c{Electronic-Properties and Optical-Absorption Spectra of GaAs-AlxGa1-xAs Quantum-Wells in Externally Applied Electric-Fields{?=o cu03.3.2J=o cJ=o c "Physical Review B-Condensed Matter"?=o c Article+$M_46@u40=o c Article+$M_46@k^N~//ui.=@Sanders, G. D. //Bajaj, K. K. ?=o ccUniversal Energy Syst Inc,4401 Dayton Xenia ; Usaf,Wright Aeronaut Labs,Avion Lab/Wright Pattersoncu?=o c{Electronic-Properties and Optical-Absorption Spectra of GaAs-AlxGa1-xAs Quantum-Wells in Externally Applied Electric-Fields{?=o cu03.3.2J=o cJ=o c "Physical Review B-Condensed Matter"?=o c Article+$M_46@u_|6]+ 1987 Feb 15 +$M_46@_|6]+35+$M_46@_|6]+