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George T. Wang

Sandia National Laboratories' Solid State Lighting Energy Frontier Research Center

Dr. George T. Wang

gtwang@sandia.gov
Sandia National Laboratories
P.O. Box 5800, MS-1086
Albuquerque, NM 87185
Office: (505) 284-9212
Fax: (505) 844-3211
Last Updated 1/2011

SSLS EFRCSSLS EFRC

Dr. George T. Wang Publications

2010 : 2009 : 2008 : 2007 : 2006 : 2005
2004 : 2003 : 2002 : 2001 : 2000 : 1999

2010 Publications

Q. M. Li, G. T. Wang, "Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires", Appl. Phys. Lett., 97, 181107 2010.[link]

G. T. Wang, Q. Li, J. Huang, A. A. Talin, Y. Lin, I. Arslan, A., Armstrong, P. C. Upadhya, R. P. Prasankumar, “III-nitride nanowires: Growth, properties, and applications,” Proc. SPIE Vol. 7768 77680K-1, 2010.[link]

G. T. Wang, "III-Nitride Semiconductor Nanowires Novel Materials for Optoelectronic & Energy Applications", A to Z of Nanotechnology - Nanotechnology Thought Leaders Series, 2010. [link]

A. Armstrong, Q. Li, Y. Lin, A. A. Talin, G. T. Wang, "GaN nanowire surface state observed using deep level optical spectroscopy", Appl. Phys. Lett., 96,2010. [link]

Q. M. Li, G. T. Wang, "Spatial Distribution of Defect Luminescence in GaN Nanowires", Nano Lett., 10, 1554 2010. [link]

P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, R. P. Prasankumar, "The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires", Semicon. Sci. Tech., 25,2010. [link]

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2009 Publications

A. Armstrong, Q. Li, K. H. A. Bogart et al., “Deep level optical spectroscopy of GaN nanorods,” Journal of Applied Physics 106(5), 053712 (2009). [link]

A. Armstrong, G. T. Wang, A. A. Talin, "Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires", J. Electronic Mat., 38, 484 (2009). [link]

Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Applied Physics Letters 94(23), (2009). [link]

Q. Li, Y. Lin, J. R. Creighton et al., “Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire,” Advanced Materials 21(23), 2416-2420 (2009). [link]

Y. Lin, Q. Li, A. Armstrong, G. T. Wang, "In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten/gallium nanoprobes", Solid State Commun., 149, 1608 (2009). [link]

R. P. Prasankumar, P. C. Upadhya, Q. Li et al., “Ultrafast carrier dynamics in semiconductor nanowires,” Proceedings of the SPIE - The International Society for Optical Engineering, 74060E (10 pp.) (2009). [link]

G. Stan, C. V. Ciobanu, T. P. Thayer et al., “Elastic moduli of faceted aluminum nitride nanotubes measured by contact resonance atomic force microscopy,” Nanotechnology 20(3), (2009). [link]

T. Westover, R. Jones, J. Y. Huang et al., “Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires,” Nano Letters 9(1), 257-263 (2009). [link]

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2008 Publications

I. Arslan, A. A. Talin, and G. T. Wang, “Three-Dimensional Visualization of Surface Defects in Core-Shell Nanowires,” Journal of Physical Chemistry C 112, 11093–11097 (2008). [link]

Q. Li, and G. T. Wang, “Improvement in Aligned GaN Nanowire Growth using Submonolayer Ni Catalyst Films,” Applied Physics Letters 93, 043119 (2008). [link]

Q. Li, and G. T. Wang, “The Role of Collisions in the Aligned Growth of Vertical Nanowires,” Journal of Crystal Growth 310, 3706-3709 (2008). [link]

A. A. Talin, G. T. Wang, E. Lai et al., “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Applied Physics Letters 92(9), 093105-1 (2008). [link]

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2007 Publications

J. R. Creighton, G. T. Wang, and M. E. Coltrin, “Fundamental chemistry and modeling of group-III nitride MOVPE,” Journal of Crystal Growth 298, 2-7 (2007). [link]

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2006 Publications

G. T. Wang, and J. R. Creighton, “Complex formation of trimethylaluminum and trimethylgallium with ammonia: Evidence for a hydrogen-bonded adduct,” Journal of Physical Chemistry A 110(3), 1094-1099 (2006). [link]

G. T. Wang, A. A. Talin, D. J. Werder et al., “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773-5780 (2006). [link]

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2005 Publications

J. R. Creighton, and G. T. Wang, “Reversible adduct formation of trimethylgallium and trimethylindium with ammonia,” Journal of Physical Chemistry A 109(1), 133-137 (2005). [link]

J. R. Creighton, and G. T. Wang, “Kinetics of metal organic-ammonia adduct decomposition: Implications for group-III nitride MOCVD,” Journal of Physical Chemistry A 109(46), 10554-10562 (2005). [link]

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2004 Publications

J. R. Creighton, G. T. Wang, W. G. Breiland et al., “Nature of the parasitic chemistry during AlGaInNOMVPE,” Journal of Crystal Growth 261, 204 (2004). [link]

G. T. Wang, and J. R. Creighton, “Complex formation between magnesocene (MgCp2) and NH3: Implications for p-type doping of group III nitrides and the Mg memory effect,” Journal of Physical Chemistry A 108(22), 4873-4877 (2004). [link]

11th Biennial Workshop on Organometallic Vapor Phase Epitaxy; July 20-24, 2003; Keystone, Colorado 261(2-3), 204-213 (2004).

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2003 Publications

G. T. Wang, C. Mui, J. F. Tannaci, M. A. Filler, C. B. Musgrave, S. F. Bent, "Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2x1 and Si(100)-2x1", J. Phys. Chem. B, 107, 4982 2003. [link]

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2002 Publications

C. Mui, J. H. Han, G. T. Wang, C. B. Musgrave, S. F. Bent, "Proton transfer reactions on semiconductor surfaces", J. Am. Chem. Soc., 124, 4027 2002. [link]

G. T. Wang, C. Mui, C. B. Musgrave, S. F. Bent, "Competition and selectivity of organic reactions on semiconductor surfaces: Reaction of unsaturated ketones on Si(100)-2x1 and Ge(100)-2x1", J. Am. Chem. Soc., 124, 8990 2002. [link]

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2001 Publications

C. Mui, G. T. Wang, S. F. Bent, C. B. Musgrave, "Reactions of methylamines at the Si(100)-2x1 surface", J. Chem. Phys., 114, 10170 2001. [link]

J. N. Russell, J. E. Butler, G. T. Wang, S. F. Bent, J. S. Hovis, R. J. Hamers, M. P. D'Evelyn, "pi bond versus radical character of the diamond (100)-2 x 1 surface", Materials Chemistry and PhysicsTaiwan Diamond 2000 Meeting; July 30 - August 2, 2000; Inst. Atomic Molecular Sci Acad Sinica; Taipei, Taiwan, 72, 147 2001.

G. T. Wang, C. Mui, C. B. Musgrave, S. F. Bent, "Example of a thermodynamically controlled reaction on a semiconductor surface: Acetone on Ge(100)-2X1", J. Phys. Chem. B, 105, 12559 2001. [link]

G. T. Wang, C. Mui, C. B. Musgrave, S. F. Bent, "Effect of a methyl-protecting group on the adsorption of pyrrolidine on Si(100)-2 x 1", J. Phys. Chem. B, 105, 3295 2001. [link]

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2000 Publications

G. T. Wang, S. F. Bent, J. N. Russell, J. E. Butler, M. P. D'Evelyn, "Functionalization of diamond(100) by Diels-Alder chemistry", J. Am. Chem. Soc., 122, 744 2000. [link]

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1999 Publications

P. Lal, A. V. Teplyakov, Y. Noah, M. J. Kong, G. T. Wang, S. F. Bent, "Adsorption of ethylene on the Ge(100)-2 x 1 surface: Coverage and time-dependent behavior", J. Chem. Phys., 110, 10545 1999. [link]

G. T. Wang, C. Mui, C. B. Musgrave, S. F. Bent, "Cycloaddition of cyclopentadiene and dicyclopentadiene on Si(100)-2x1: Comparison of monomer and dimer adsorption", J. Phys. Chem. B, 103, 6803 1999. [link]

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