Creighton, J.R. and G.T. Wang, “Method for improving Mg doping during group-III nitride MOCVD”
U.S. Patent 7,449,404 (2008).
G.T. Wang, Q. Li, J.R. Creighton, “Nanowire-templated lateral epitaxial growth of non-polar group III Nitrides”
U.S. Patent 7,670,933 B1 (2010).
G.T. Wang, Q. Li, J.R. Creighton , “Highly aligned vertical GaN nanowires using submonolayer metal catalysts” U.S. Patent 7,745,315 (2010).