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George T. Wang

Sandia National Laboratories' Solid State Lighting Energy Frontier Research Center

Dr. George T. Wang

gtwang@sandia.gov
Sandia National Laboratories
P.O. Box 5800, MS-1086
Albuquerque, NM 87185
Office: (505) 284-9212      
Fax: (505) 844-3211
Last Updated 1/2011

SSLS EFRCSSLS EFRC

Dr. George T. Wang patents

Nanowire-templated lateral growth of non-polar group III Nitrides
Creighton, J.R. and G.T. Wang, “Method for improving Mg doping during group-III nitride MOCVD”
U.S. Patent 7,449,404 (2008).

G.T. Wang, Q. Li, J.R. Creighton, “Nanowire-templated lateral epitaxial growth of non-polar group III Nitrides”
U.S. Patent 7,670,933 B1 (2010).

G.T. Wang, Q. Li, J.R. Creighton , “Highly aligned vertical GaN nanowires using submonolayer metal catalysts” U.S. Patent 7,745,315 (2010).


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