In order to realize efficient nanowire-based devices, high quality electrical contacts must be made to either single nanowires or vertically-integrated nanowire arrays and tested. In our lab, we have probed the electrical properties of nanowires using both optically-patterned metal contacts as well as with cutting-edge in-situ electron microscopy tools where individual nanowires are selected and probed while simultaneously imaged at up to atomic resolutions. Techniques for vertically-integrated nanowire devices, such as the pictured nanorod LED prototype, are also being developed and optimized.
Y. Lin, Q. Li, A. Armstrong, G. T. Wang, "In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten/gallium nanoprobes", Solid State Commun., 149, 1608 (2009). [link]
T. Westover, R. Jones, J. Y. Huang et al., “Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires,” Nano Letters 9(1), 257-263 (2009). [link]
A. A. Talin, G. T. Wang, E. Lai et al., “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Applied Physics Letters 92(9), 093105-1 (2008). [link]
In-situ SEM nanoprobing
Blue nanorod LED prototype