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George T. Wang

Sandia National Laboratories' Solid State Lighting Energy Frontier Research Center

Dr. George T. Wang

gtwang@sandia.gov
Sandia National Laboratories
P.O. Box 5800, MS-1086
Albuquerque, NM 87185
Office: (505) 284-9212      
Fax: (505) 844-3211
Last Updated 1/2011

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Dr. George T. Wang Facilities

In 2007, Dr. Wang, took delivery of a new, state-of-the-art $3.5M custom system for the growth and characterization of nanostructures. The so-called MESA Advanced Nanotechnology Tool (ANT) provides advanced capabilities for film deposition, nanostructure growth, and characterization. Its capabilities include a high resolution UHV FE-SEM combined with “same spot” variable temperature scanning tunneling microscopy (STM) and tuning-fork atomic force microscopy (AFM), scanning auger microscopy (SAM), x-ray photoelectron spectroscopy (XPS), UHV nano-cathodoluminescence (CL), and depth profiling. A separate module includes an environmental FE-SEM equipped with nanomanipulators and capable of imaging at temperatures up to 1200 °C. Growth capabilities of the system include separate modules for molecular beam epitaxy (MBE) and metals deposition as well as chemical vapor deposition.

Dr. Wang and team

Advanced Nanotechnology Laboratory
Our research also makes extensive use of SNL’s new $460M Microsystems and Engineering Sciences Applications (MESA) facility, the largest government investment in microtechnology in the world. This state-of-the-art complex allows for quick turnaround for innovative compound semiconductor device prototypes at SNL. The MESA complex contains an electron beam lithography system (JEOL JBX-5FE), 3 Karl Suss MJB-3 aligners with one operating in deep UV, 2 Karl Suss MA-6 aligners with backside alignment capabilities, a full array of wet benches, 4 e-beam metal evaporators, metal plating baths, two rapid thermal annealing systems (one devoted exclusively to nitride systems), FE and filament scanning electron microscopes, atomic force microscope, several sputtering systems for metals and dielectrics, 2 oxidation furnaces, 6 MOCVD systems, 2 new coupled electron cyclotron resonance/inductively coupled plasma (ICP) -reactive ion etching (RIE) etch/deposition systems (one for Ga-based materials and one for In-based materials), a Bosch ICP etch system, several smaller RIE systems and a full array of characterization and packaging tools.  Our III-nitride growth experiments are primarily carried out on a Veeco (formerly Emcore Corp.) D-125 MOCVD reactor.

CINT facility
Microsystems and Engineering Sciences Applications (MESA)
Other characterization facilities at SNL include Rutherford backscattering (RBS), nuclear reaction analysis system, ion implantation for modification of composition, and ion irradiation for production of lattice defects, Auger spectrometers, in-situ ultra-high-vacuum (UHV) ion, photon, and electron beam irradiation, UHV facility combining surface analysis by low-energy electron diffraction (LEED) and Auger electron spectroscopy, with ion-beam analysis/channeling, a unique deep level transient spectroscopy system (DLTS), photoluminescence (PL) and microphotoluminescence systems (μ-PL), photoluminescence excitation (PLE), time-resolved photoluminescence (TRPL), Fourier-transform infrared spectroscopy (FTIR), photothermal deflection, Capacitance/Voltage-profiling, Hall effect and 4-terminal dc and ac conductivity measurements, a dopant profiling Polaron, transmission electron microscopes (TEM), a Digital Instruments atomic force microscope (AFM), a Philips X’PERT x-ray diffractometer and abundant optical/electrical measurement capabilities. Scanning electron microscopes (SEM) with electron beam lithography and focused-ion-beam capabilities for nanodevice fabrication are also available.  SNL also has several solar cell testing stations using solar simulators.

Finally, we have access to and make use of the considerable technical facilities at the nearby Center for Integrated Nanotechnologies (CINT) and University of New Mexico’s Center for High Technology Materials.

 

MESA facility
Center for Integrated Nanotechnologies (CINT)

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